CN102584235A - 低损耗微波介质陶瓷 - Google Patents

低损耗微波介质陶瓷 Download PDF

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CN102584235A
CN102584235A CN2012100430138A CN201210043013A CN102584235A CN 102584235 A CN102584235 A CN 102584235A CN 2012100430138 A CN2012100430138 A CN 2012100430138A CN 201210043013 A CN201210043013 A CN 201210043013A CN 102584235 A CN102584235 A CN 102584235A
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microwave
low
microwave medium
medium ceramic
ceramics
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陈湘明
易磊
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Zhejiang University ZJU
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Zhejiang University ZJU
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Abstract

本发明涉及用于介质谐振器、滤波器及振荡器等微波通讯系统中的微波介质陶瓷。它的表达式为xSrO•yLn2O3•zAl2O3的低损耗微波介质陶瓷。其中Ln=La,Nd或Sm,25.0mol%≤x≤44.0mol%,25.0mol%≤y≤44.0mol%,25.0mol%≤z≤44.0mol%,且x+y+z=100%。本发明提供的微波介质陶瓷介电常数为18~25,Qf>85,000GHz,同时具有近零谐振频率温度系数。

Description

低损耗微波介质陶瓷
技术领域
本发明涉及用于介质谐振器、滤波器及振荡器等微波通讯系统中的微波介质陶瓷。
背景技术
近年来,随着移动通讯与卫星通讯技术的迅速发展,对介质谐振器与滤波器等微波元器件用的微波介质陶瓷的需求正在日益增长。数据移动通讯与卫星通讯的迅速发展,对低损耗微波介质陶瓷提出迫切的要求。其基本性能要求为:介电常数εr=15~25,品质因数Qf≥60,000GHz,谐振频率温度系数τf=0±10ppm/℃。
虽然目前已有的Ba(Mg1/3Ta2/3)O3,CaTiO3-MgTiO3等低损耗微波介质陶瓷,但前者的烧结温度高,制备工艺困难,品质因数与温度系数随制备条件变化较大,而后者存在Qf值偏低的缺点。
发明内容
本发明的目的是提供介电常数为18~25、同时具有低损耗(Qf>85,000GHz)与良好的温度稳定性的微波介质陶瓷。
本发明的低损耗微波介质陶瓷的一般表达式为xSrO·yLn2O3·zAl2O3,其中Ln=La,Nd或Sm,25.0mol%≤x≤44.0mol%,25.0mol%≤y≤44.0mol%,25.0mol%≤z≤44.0mol%,且x+y+z=100%。
本发明在综合考察已有微波介质陶瓷体系的基础上,着眼于钙钛矿结构以外的氧化物,提供了具有低损耗(Qf>85,000GHz)与近零谐振频率温度系数,介电常数为18~25的低损耗微波介质陶瓷。而利用本发明提供的低损耗微波介质陶瓷,可使介质谐振器与滤波器等微波元器件适合更高频率与更大功率的应用。同时,本发明提供的陶瓷亦可应用于高频陶瓷电容器、温度补偿陶瓷电容器或微波基板等。因此,本发明在工业上有着极大的价值。
具体实施方式
以下结合实例进一步说明本发明。
发明的低损耗微波介质陶瓷可按下述方法制备而成。
首先,将纯度为99.9%以上的SrCO3、La2O3、Nd2O3、Sm2O3、Al2O3按一定的比例用湿式球磨法混合24小时(溶剂为无水乙醇),烘干后在1400-1550℃、大气气氛中煅烧6小时。然后,在煅烧粉末中添加粘结剂,接着造粒,再通过单轴压力成形在1000kg/cm2的压力下制备出直径12mm、厚度3-6mm的陶瓷坯体,最后在1525-1625℃、大气气氛中烧结3小时以制备所需的微波介质陶瓷。
用粉末X线衍射法对烧结后的陶瓷试样进行了物相分析,而用圆柱介质谐振器法在10GHz进行了微波介电性能的评价。
表1示出了各实施例的成分含量与微波介电性能关系。[表1]
从表1可见,本发明的微波介质陶瓷介电常数为18~25,Qf>85,000GHz,同时具有近零谐振频率温度系数。

Claims (1)

1.低损耗微波介质陶瓷,其特征是它的表达式为xSrO•yLn2O3•zAl2O3,其中Ln = La, Nd或Sm,25.0mol%≤x≤44.0mol%,25.0mol%≤y≤44.0mol%,25.0mol%≤z≤44.0mol%,且x+y+z=100%。
CN2012100430138A 2012-02-24 2012-02-24 低损耗微波介质陶瓷 Pending CN102584235A (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105198423A (zh) * 2015-08-18 2015-12-30 电子科技大学 Sr-La-Al基微波介质陶瓷材料及其制备方法
CN111635230A (zh) * 2020-05-28 2020-09-08 浙江大学 一种高品质因数铈酸锶微波介质陶瓷材料及其制备方法

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CN1342622A (zh) * 2001-10-10 2002-04-03 浙江大学 低损耗微波介质陶瓷
US20030032546A1 (en) * 2000-10-30 2003-02-13 Shugo Ohtsuki Dielectric ceramic composition for microwave use
CN1405118A (zh) * 2002-11-08 2003-03-26 浙江大学 低损耗微波介质陶瓷
CN1419524A (zh) * 2001-01-24 2003-05-21 住友特殊金属株式会社 微波介质陶瓷组合物
US6940371B2 (en) * 2002-08-30 2005-09-06 Murata Manufacturing Co., Ltd. High frequency dielectric ceramic composition, dielectric resonator, dielectric filter, dielectric duplexer, and communication device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030032546A1 (en) * 2000-10-30 2003-02-13 Shugo Ohtsuki Dielectric ceramic composition for microwave use
CN1419524A (zh) * 2001-01-24 2003-05-21 住友特殊金属株式会社 微波介质陶瓷组合物
CN1342622A (zh) * 2001-10-10 2002-04-03 浙江大学 低损耗微波介质陶瓷
US6940371B2 (en) * 2002-08-30 2005-09-06 Murata Manufacturing Co., Ltd. High frequency dielectric ceramic composition, dielectric resonator, dielectric filter, dielectric duplexer, and communication device
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Non-Patent Citations (1)

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Title
SURIYAMURTHY NAGAMANIW ET.AL.: "Luminescence Properties of SrO-Al2O3:Eu2+,Dy3+ Prepared at Different Temperatures", 《J.AM.CERAM.SOC.》, vol. 93, no. 11, 31 December 2010 (2010-12-31), pages 3832 - 3836 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105198423A (zh) * 2015-08-18 2015-12-30 电子科技大学 Sr-La-Al基微波介质陶瓷材料及其制备方法
CN111635230A (zh) * 2020-05-28 2020-09-08 浙江大学 一种高品质因数铈酸锶微波介质陶瓷材料及其制备方法
CN111635230B (zh) * 2020-05-28 2021-07-09 浙江大学 一种高品质因数铈酸锶微波介质陶瓷材料及其制备方法

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Application publication date: 20120718