CN102576672B - 利用可倾斜的高架rf感应源的等离子体反应器 - Google Patents

利用可倾斜的高架rf感应源的等离子体反应器 Download PDF

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Publication number
CN102576672B
CN102576672B CN201080039319.5A CN201080039319A CN102576672B CN 102576672 B CN102576672 B CN 102576672B CN 201080039319 A CN201080039319 A CN 201080039319A CN 102576672 B CN102576672 B CN 102576672B
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China
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support plate
floating support
shoulder ring
plasma reactor
conductive
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CN201080039319.5A
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Chinese (zh)
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CN102576672A (zh
Inventor
肯尼思·S·柯林斯
安德鲁·源
杰弗瑞·马丁·萨利纳斯
伊玛德·尤瑟夫
明·徐
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
CN201080039319.5A 2009-09-03 2010-06-11 利用可倾斜的高架rf感应源的等离子体反应器 Active CN102576672B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310360195.6A CN103426711B (zh) 2009-09-03 2010-06-11 利用可倾斜的高架rf感应源的等离子体反应器

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US23971109P 2009-09-03 2009-09-03
US61/239,711 2009-09-03
US12/787,198 2010-05-25
US12/787,198 US8414736B2 (en) 2009-09-03 2010-05-25 Plasma reactor with tiltable overhead RF inductive source
PCT/US2010/038286 WO2011028312A1 (en) 2009-09-03 2010-06-11 Plasma reactor with tiltable overhead rf inductive source

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201310360195.6A Division CN103426711B (zh) 2009-09-03 2010-06-11 利用可倾斜的高架rf感应源的等离子体反应器

Publications (2)

Publication Number Publication Date
CN102576672A CN102576672A (zh) 2012-07-11
CN102576672B true CN102576672B (zh) 2015-06-17

Family

ID=43623091

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CN201080039319.5A Active CN102576672B (zh) 2009-09-03 2010-06-11 利用可倾斜的高架rf感应源的等离子体反应器
CN201310360195.6A Active CN103426711B (zh) 2009-09-03 2010-06-11 利用可倾斜的高架rf感应源的等离子体反应器

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Country Status (6)

Country Link
US (2) US8414736B2 (enExample)
JP (2) JP5705224B2 (enExample)
KR (2) KR101445156B1 (enExample)
CN (2) CN102576672B (enExample)
TW (2) TWI500082B (enExample)
WO (1) WO2011028312A1 (enExample)

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US9016289B2 (en) * 2011-11-28 2015-04-28 Intermolecular, Inc. System and method for reducing particles and marks on wafer surface following reactor processing
TW201405627A (zh) * 2012-07-20 2014-02-01 Applied Materials Inc 具有同軸ｒｆ饋送及同軸遮罩之對稱的感應性耦合電漿源
CN103060778B (zh) * 2013-01-23 2015-03-11 深圳市劲拓自动化设备股份有限公司 平板式pecvd装置
US20140262044A1 (en) * 2013-03-15 2014-09-18 Applied Materials, Inc. Mu metal shield cover
KR102171725B1 (ko) 2013-06-17 2020-10-29 어플라이드 머티어리얼스, 인코포레이티드 플라즈마 반응기를 위한 강화된 플라즈마 소스
US9184021B2 (en) * 2013-10-04 2015-11-10 Applied Materials, Inc. Predictive method of matching two plasma reactors
US9305748B2 (en) 2013-10-04 2016-04-05 Applied Materials, Inc. Method of matching two or more plasma reactors
US10249475B2 (en) 2014-04-01 2019-04-02 Applied Materials, Inc. Cooling mechanism utlized in a plasma reactor with enhanced temperature regulation
US10297457B2 (en) * 2015-03-19 2019-05-21 Mattson Technology, Inc. Controlling azimuthal uniformity of etch process in plasma processing chamber
JP5977853B1 (ja) * 2015-03-20 2016-08-24 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラム及び記録媒体
JP6424120B2 (ja) * 2015-03-23 2018-11-14 東京エレクトロン株式会社 電源システム、プラズマ処理装置及び電源制御方法
US10032604B2 (en) 2015-09-25 2018-07-24 Applied Materials, Inc. Remote plasma and electron beam generation system for a plasma reactor
WO2018152142A1 (en) * 2017-02-20 2018-08-23 Mattson Technology, Inc. Temperature control using temperature control element coupled to faraday shield
US10190216B1 (en) * 2017-07-25 2019-01-29 Lam Research Corporation Showerhead tilt mechanism
KR102309660B1 (ko) * 2019-11-21 2021-10-07 주식회사 유진테크 기판 처리 장치
WO2021262446A1 (en) * 2020-06-23 2021-12-30 Lam Research Corporation Automated showerhead tilt adjustment
JP2023548321A (ja) * 2020-10-29 2023-11-16 ボード オブ リージェンツ，ザ ユニバーシティ オブ テキサス システム 触媒影響化学エッチングのための装置及び方法技術

Citations (5)

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US5280154A (en) * 1992-01-30 1994-01-18 International Business Machines Corporation Radio frequency induction plasma processing system utilizing a uniform field coil
US5433812A (en) * 1993-01-19 1995-07-18 International Business Machines Corporation Apparatus for enhanced inductive coupling to plasmas with reduced sputter contamination
US5855681A (en) * 1996-11-18 1999-01-05 Applied Materials, Inc. Ultra high throughput wafer vacuum processing system
CN101043784A (zh) * 2006-03-21 2007-09-26 显示器生产服务株式会社 混合等离子体反应器
WO2008088668A1 (en) * 2007-01-17 2008-07-24 Lam Research Corporation Apparatuses for adjusting electrode gap in capacitively-coupled rf plasma reactor

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US5387288A (en) * 1993-05-14 1995-02-07 Modular Process Technology Corp. Apparatus for depositing diamond and refractory materials comprising rotating antenna
US6229264B1 (en) * 1999-03-31 2001-05-08 Lam Research Corporation Plasma processor with coil having variable rf coupling
KR100291898B1 (ko) * 1999-04-09 2001-06-01 윤종용 스파터 오염원을 감소시키고 플라즈마에 유도 결합을 향상시키기위한 차폐판의 제조방법 및 플라즈마 식각장치
US6507155B1 (en) * 2000-04-06 2003-01-14 Applied Materials Inc. Inductively coupled plasma source with controllable power deposition
JP3462865B2 (ja) * 2001-07-10 2003-11-05 三菱重工業株式会社 給電アンテナ及び半導体製造装置
JP3969081B2 (ja) 2001-12-14 2007-08-29 東京エレクトロン株式会社 プラズマ処理装置
JP2003234293A (ja) 2002-02-06 2003-08-22 Canon Inc ヘリコン波プラズマ装置及びヘリコン波プラズマ処理方法
US7223321B1 (en) * 2002-08-30 2007-05-29 Lam Research Corporation Faraday shield disposed within an inductively coupled plasma etching apparatus
JP2004172243A (ja) * 2002-11-19 2004-06-17 Nec Kansai Ltd ドライエッチング装置
US7713432B2 (en) * 2004-10-04 2010-05-11 David Johnson Method and apparatus to improve plasma etch uniformity
US7431797B2 (en) * 2006-05-03 2008-10-07 Applied Materials, Inc. Plasma reactor with a dynamically adjustable plasma source power applicator
US7504041B2 (en) * 2006-05-03 2009-03-17 Applied Materials, Inc. Method of processing a workpiece in a plasma reactor employing a dynamically adjustable plasma source power applicator
US7829815B2 (en) * 2006-09-22 2010-11-09 Taiwan Semiconductor Manufacturing Co., Ltd. Adjustable electrodes and coils for plasma density distribution control
US8223470B2 (en) * 2006-10-10 2012-07-17 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method to improve uniformity and reduce local effect of process chamber
US8999106B2 (en) * 2007-12-19 2015-04-07 Applied Materials, Inc. Apparatus and method for controlling edge performance in an inductively coupled plasma chamber
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US5280154A (en) * 1992-01-30 1994-01-18 International Business Machines Corporation Radio frequency induction plasma processing system utilizing a uniform field coil
US5433812A (en) * 1993-01-19 1995-07-18 International Business Machines Corporation Apparatus for enhanced inductive coupling to plasmas with reduced sputter contamination
US5855681A (en) * 1996-11-18 1999-01-05 Applied Materials, Inc. Ultra high throughput wafer vacuum processing system
CN101043784A (zh) * 2006-03-21 2007-09-26 显示器生产服务株式会社 混合等离子体反应器
WO2008088668A1 (en) * 2007-01-17 2008-07-24 Lam Research Corporation Apparatuses for adjusting electrode gap in capacitively-coupled rf plasma reactor

Also Published As

Publication number Publication date
KR101445156B1 (ko) 2014-09-29
JP2013504159A (ja) 2013-02-04
CN102576672A (zh) 2012-07-11
TW201342470A (zh) 2013-10-16
JP5705224B2 (ja) 2015-04-22
TWI446440B (zh) 2014-07-21
WO2011028312A1 (en) 2011-03-10
TWI500082B (zh) 2015-09-11
CN103426711B (zh) 2016-04-27
JP5789281B2 (ja) 2015-10-07
TW201126595A (en) 2011-08-01
US20130206594A1 (en) 2013-08-15
JP2013211580A (ja) 2013-10-10
KR20130083489A (ko) 2013-07-22
US8414736B2 (en) 2013-04-09
KR20120073260A (ko) 2012-07-04
US20110048644A1 (en) 2011-03-03
CN103426711A (zh) 2013-12-04
KR101668587B1 (ko) 2016-10-24
US9330887B2 (en) 2016-05-03

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