CN102570864A - Online loss calculation method for modular multilevel converter - Google Patents

Online loss calculation method for modular multilevel converter Download PDF

Info

Publication number
CN102570864A
CN102570864A CN2011104046636A CN201110404663A CN102570864A CN 102570864 A CN102570864 A CN 102570864A CN 2011104046636 A CN2011104046636 A CN 2011104046636A CN 201110404663 A CN201110404663 A CN 201110404663A CN 102570864 A CN102570864 A CN 102570864A
Authority
CN
China
Prior art keywords
igbt
loss
fly
wheel diode
state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN2011104046636A
Other languages
Chinese (zh)
Other versions
CN102570864B (en
Inventor
赵成勇
杨柳
肖湘宁
许建中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
North China Electric Power University
Original Assignee
North China Electric Power University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by North China Electric Power University filed Critical North China Electric Power University
Priority to CN201110404663.6A priority Critical patent/CN102570864B/en
Publication of CN102570864A publication Critical patent/CN102570864A/en
Application granted granted Critical
Publication of CN102570864B publication Critical patent/CN102570864B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Dc-Dc Converters (AREA)

Abstract

The invention discloses an online loss calculation method for a modular multilevel converter (MMC), and belongs to the field of power transmission and distribution. The method comprises the following steps of: 1) calculating the conduction loss of two insulated gate bipolar transistors (LGBT) and two flywheel diodes in each sub-module (SM); 2) calculating the switching loss of the two IGBTs and the reverse recovery loss of the two flywheel diodes in each SM; and 3) calculating related loss by using a loss calculation module. The method has the advantages that: 1, the complexity of manual measurement and calculation is effectively avoided when the MMC has a great number of modules, workload is greatly reduced, and the method is fast and convenient; 2, the online calculation of the loss of the MMC is realized, and the method is wide in application range, and can be applied to the loss calculation of an MMC system in any operating state; and 3, modular packaging is facilitated, a floor area is saved, the utilization rate of resources is increased, and the output of a platform comprises various kinds of loss and loss ratios, so that the method is direct and clear, and staff can conveniently observe the running state of the system at any time.

Description

The online loss computational methods of a kind of modularization multi-level converter
Technical field
The invention belongs to the power transmission and distribution field, the online loss computational methods of particularly a kind of modularization multi-level converter.
Background technology
In recent years; For satisfying the demand that economic growth increases supply of electric power day by day; The voltage source converter (Voltage Source Converter is called for short VSC) that can turn-off power electronic device based on large power all-controlled type is widely used in high voltage direct current transmission (High Voltage Direct Current the is called for short HVDC) technology; And obtained good operational performance, be referred to as flexible DC power transmission technology (VSC-HVDC).But; The loss of this system (adopting the flexible DC power transmission technology) is far longer than the loss of traditional DC transmission system; This mainly is because the flexible DC power transmission technology adopts bigger converter loss to cause; Especially two level, three-level voltage source converter, though its topological structure, control strategy are comparatively simple, switching frequency is high, the converter loss is bigger; This also becomes its major obstacle that is applied to high-power long-distance transmissions, so fall the damage measure and will have the important engineering meaning what the loss characteristic of voltage source converter was furtherd investigate and proposed to be correlated with.
A kind of novel voltage source converter topology---characteristics such as modularization multi-level converter (MMC) is flexible because of its control, switching frequency is low, loss is little just progressively are applied in the flexible DC power transmission engineering.The loss characteristic research of modularization multi-level converter also becomes one of research content of flexible DC power transmission technology; Existing loss computational methods are mostly to two level voltage source converters, and are considerably less about the research that the modularization multi-level converter loss is calculated.Compare with two level converters; The topological structure of modularization multi-level converter, control mode and loss characteristic all have very big-difference, and only some can apply in the loss calculating of modularization multi-level converter existing two level converter loss computational methods.
On the one hand; Particularity because of modularization multi-level converter topological structure, operation mechanism and control mode; Synchronization flows through the electric current of upper and lower bridge arm IGBT module maybe be different, though also can release the current value of modularization multi-level converter upper and lower bridge arm with the method for theory analysis and empirical equation, still along with the variation of running environment; During such as the variation of system modulation degree or the system failure, the applicability of these formula will reduce greatly.On the other hand; When the level number of modularization multi-level converter very high; When just the upper and lower bridge arm of the every phase of modularization multi-level converter has a lot of SM modules, need measure the electric current that flows in each SM module two IGBT devices and two fly-wheel diodes (FWD) device during computed losses, also need detect the conducting state of each device; If the loss of manual calculation converter, workload will be very huge; Such as the U.S. Trans Bay Cable Project (TBC engineering) that has put into operation in 2010; This project adopts 199 level modularization multi-level converters; Every phase upper and lower bridge arm has 216 SM modules, and wherein 198 SM modules put into operation and constitute 199 level, other 18 SM module redundancies; If measure its loss; Must measure the electric current that obtains the individual IGBT of 3 * 2 * 216 * 2=2592 (wherein 3 be meant the MMC three-phase bridge, 2 * 216 be the number of the single-phase brachium pontis SM of MMC module, last 2 be IGBT device number or fly-wheel diode device number in each SM module) and the electric current of the fly-wheel diode of number equally; If but adopt the method for online detection; Only need to give each device the inside to increase corresponding electric parameters measuring point, build the corresponding calculated module, through certain algorithm; Just can rely on computer; In very short simulation time, realize the real-time calculating of loss in the emulation quickly and easily, can reduce workload greatly.So will seek a kind of loss computational methods that can be applicable to any situation; Still there is not document that the online loss computational methods of modularization multi-level converter are carried out systematic research at present; So; Along with the actual extensive use of engineering, select suitable simulated environment PSCAD/EMTDC, doing further investigation to the online loss computational methods of modularization multi-level converter has urgent demand property and necessity; This will not only have the important in theory innovative significance, also have important actual construction value.
Summary of the invention
The present invention is directed to above-mentioned defective and disclose the online loss computational methods of kind modularization multi-level converter.It may further comprise the steps:
1) obtains A phase brachium pontis current i through measuring a, B phase brachium pontis current i b, C phase brachium pontis current i cWith the working temperature t of current environment, calculate the on-state loss of an IGBT, the 2nd IGBT, first fly-wheel diode and second fly-wheel diode in each SM module then:
2) calculate an IGBT and the switching loss of the 2nd IGBT and the reverse recovery loss of first fly-wheel diode and second fly-wheel diode in each SM module;
3) calculate the total on-state loss P of IGBT through the loss computing module Tcon, the total on-state loss P of fly-wheel diode Dcon, IGBT master switch loss P Tsw, the total reverse recovery loss P of fly-wheel diode Drec, IGBT total losses P T, fly-wheel diode total losses P D, the total on-state loss P of modularization multi-level converter Con, modularization multi-level converter master switch loss P Sw, modularization multi-level converter total losses P TotWith modularization multi-level converter loss ratio K.
Said step 1) specifically may further comprise the steps:
11) from product description, obtain following four curves: the collection emitter voltage V ' of IGBT when temperature is 25 ℃ CEWith collector current I CRelation curve, the collection emitter voltage V of IGBT when temperature is 125 ℃ CEWith collector current I CRelation curve, the forward conduction voltage V ' of first fly-wheel diode when temperature is 25 ℃ F-DC Forward Current I FThe forward conduction voltage V of relation curve and temperature first fly-wheel diode when being 125 ℃ F-DC Forward Current I FRelation curve;
12) the collection emitter voltage V of an IGBT when temperature is 125 ℃ CEWith collector current I CRelation curve in, obtain following N group data through trace-point method: (I C1, V CE1), (I C2, V CE2) ... (I CN, V CEN), wherein, I C1-I CNBe the collector current value of an IGBT, V CE1-V CENBe an IGBT collector current value to be I C1-I CNThe time the one IGBT collection emitter voltage value, 1≤N≤100; To (I C1, V CE1), (I C2, V CE2) ... (I CN, V CEN) this N group data carry out the high order curve match in MATLAB, an IGBT collection emitter voltage V when obtaining temperature and being 125 ℃ CEWith collector current I CRelationship;
According to formula: R T1=V CE1/ I C1, R T2=V CE2/ I C2... R TN=V CEN/ I CNObtain: when an IGBT collector current value is I C1-I CNThe time the one IGBT the on state resistance value be R T1-R TN, and then obtain following N group data: (I C1, R T1), (I C2, R T2) ... (I CN, R TN); To (I C1, R T1), (I C2, R T2) ... (I CN, R TN) this N group data carry out the high order curve match in MATLAB, the on state resistance R of an IGBT when obtaining temperature and being 125 ℃ TWith collector current I CRelationship;
13) the first fly-wheel diode forward conduction voltage V when temperature is 125 ℃ F-DC Forward Current I FRelation curve in, obtain following M group data through trace-point method: (I F1, V F1), (I F2, V F2) ... (I FM, V FM), wherein, I F1-I FMBe the DC Forward Current value of first fly-wheel diode, V F1-V FMBe that DC Forward Current value when first fly-wheel diode is I F1-I FMThe time first fly-wheel diode the forward conduction magnitude of voltage, 1≤M≤100; To (I F1, V F1), (I F2, V F2) ... (I FM, V FM) this M group data carry out the high order curve match in MATLAB, the first fly-wheel diode forward conduction voltage V when obtaining temperature and being 125 ℃ FWith DC Forward Current I FRelationship;
According to formula: R D1=V F1/ I F1, R D2=V F2/ I F2... R DM=V CEM/ I CMThe DC Forward Current value that obtains when first fly-wheel diode is I F1-I FMThe time first fly-wheel diode on state resistance value R D1-R DM, and then obtain following M group data: (I F1, R D1), (I F2, R D2) ... (I FM, R DM); To (I F1, R D1), (I F2, R D2) ... (I FM, R DM) this M group data carry out the high order curve match in MATLAB, the first fly-wheel diode on state resistance R when obtaining temperature and being 125 ℃ DWith DC Forward Current I FRelationship;
14) four curves in the step 11) are carried out interpolation arithmetic by following formula:
α T = 1 V CE [ V CE - V CE ′ 100 ( t - 25 ) + V CE ′ ]
α D = 1 V F ′ [ V F ′ - V F 100 ( t - 25 ) + V F ]
Obtain the junction temperature alpha of the on-state loss of an IGBT and the 2nd IGBT TJunction temperature alpha with the on-state loss of first fly-wheel diode and second fly-wheel diode D, in the above-mentioned formula, t is the working temperature of current environment;
15) in curve fitting module, calculate the threshold voltage V such as real-time on-state of an IGBT through following formula CEX, first fly-wheel diode threshold voltage V such as real-time on-state DX, an IGBT real-time on-state substitutional resistance R TXReal-time on-state substitutional resistance R with first fly-wheel diode DX:
V CEX=α T×V CE
V DX=α D×V F
R TX=α T×R T
R DX=α D×R D
16) with V CEXAnd R TXThe following formula of substitution is through calculating the middle on-state loss P of an IGBT EFS:
V EF = V CEX + R TX · i I EF = | i | ‾ · i ^ P EFS = i · V EF
In the above formula, the upper and lower bridge arm electric current that flows into modularization multi-level converter is i, in A phase brachium pontis, and i=i a, in B phase brachium pontis, i=i b, in C phase brachium pontis, i=i c, V EFBe the threshold voltages such as on-state of IGBT, I EFBe the equivalent electric current of the on-state of IGBT,
Figure BDA0000117311260000062
Be the peak value of brachium pontis electric current,
Figure BDA0000117311260000063
It is the arithmetic mean of brachium pontis electric current; In real work, I C=i, integrating step 12)-step 15) finds out: V CEXAnd R TXBe the function of t and i, so, P EFFunction for t and i;
With V DXAnd R DXThe following formula of substitution is through calculating the middle on-state loss P of first fly-wheel diode DFS:
V DF = V DX + R DX · i I DF = | i | ‾ · i ^ P DFS = i · V DF
In the above formula, the upper and lower bridge arm electric current that flows into modularization multi-level converter is i, V DFBe the threshold voltages such as on-state of fly-wheel diode, I DFBe the equivalent electric current of the on-state of fly-wheel diode; In real work, I F=i, integrating step 12)-step 15) finds out: V DXAnd R DXBe the function of t and i, so, P DFSFunction for t and i;
17) the middle on-state loss P ' of the 2nd IGBT EFSMiddle on-state loss P with an IGBT EFSComputational methods identical, through step 11)-step 16) draw the threshold voltage V ' such as real-time on-state of the 2nd IGBT CEX, the 2nd IGBT real-time on-state substitutional resistance R ' TXMiddle on-state loss P ' with the 2nd IGBT EFS
The middle on-state loss P ' of second fly-wheel diode DFSMiddle on-state loss P with first fly-wheel diode DFSComputational methods identical, through step 11)-step 16) draw the threshold voltage V ' such as real-time on-state of second fly-wheel diode DX, second fly-wheel diode real-time on-state substitutional resistance R ' DXMiddle on-state loss P ' with second fly-wheel diode DFS
18) find the solution the mean value s4 of the duty ratio of second fly-wheel diode in mean value s3 and all the SM modules of the duty ratio of first fly-wheel diode among the mean value s2, all SM modules of the duty ratio of the 2nd IGBT among the mean value s1, all SM modules of the duty ratio of an IGBT in every all SM modules;
19) calculate the on-state loss P of an IGBT through following formula EF, the 2nd IGBT on-state loss P ' EF, first fly-wheel diode on-state loss P DFOn-state loss P ' with second fly-wheel diode DF:
P EF=s1×P EFS
P′ EF=s2×P′ EFS
P EF ′ = s 2 × P EFS ′
P DF=s3×P DFS
P′ DF=s4×P′ DFS
P DF ′ = s 4 × P DFS ′ .
Said step 18) specifically may further comprise the steps;
181) simulation time t1 and described point step-length h are inputed in the duty ratio measuring module; The duty ratio measuring module is through gathering the current signal that flows through an IGBT, the 2nd IGBT, first fly-wheel diode and second fly-wheel diode in each SM module; Off state is opened in judgement, obtains the duty ratio of an IGBT, the 2nd IGBT, first fly-wheel diode and second fly-wheel diode in each SM module;
182) duty ratio mean value is found the solution module and respectively the duty ratio of second fly-wheel diode in the duty ratio of first fly-wheel diode in the duty ratio of the 2nd IGBT in the duty ratio of an IGBT in each SM module, each SM module, each SM module and each the SM module is averaged, and output is respectively the mean value s4 of the duty ratio of second fly-wheel diode in mean value s3 and all the SM modules of the duty ratio of first fly-wheel diode among the mean value s2, all SM modules of the duty ratio of the 2nd IGBT among the mean value s1, all SM modules of the duty ratio of an IGBT in all SM modules.
Said step 2) specifically may further comprise the steps
21) utilize interpolation to introduce the junction temperature coefficient ρ of the switching loss of an IGBT TJunction temperature coefficient ρ with the first fly-wheel diode reverse recovery loss D, calculate both with variation of temperature, its computing formula is following:
ρ T = 1 E SW 1 [ E SW 1 - E SW 2 100 ( t - 25 ) + E SW 2 ]
ρ D = 1 E rec 1 [ E rec 1 - E rec 2 100 ( t - 25 ) + E rec 2 ]
In the above-mentioned formula, E Sw1Be the energy loss in the switching process of an IGBT when meeting the following conditions: an IGBT supply voltage V CcBe reference voltage u Ref, the rated current electric current is reference current i Ref, junction temperature is 125 ℃; E Sw2Be the energy loss in the switching process of an IGBT when meeting the following conditions: an IGBT supply voltage V CcBe reference voltage u Ref, rated current is reference current i Ref, junction temperature is 25 ℃; E Sw1And E Sw2All know through the product description of an IGBT;
E Rec1Be the reverse recovery energy loss of first fly-wheel diode when meeting the following conditions: voltage is reference voltage u Ref, DC Forward Current is reference current i Ref, junction temperature is 125 ℃; E Rec2Be the reverse recovery energy loss of first fly-wheel diode when meeting the following conditions: voltage is reference voltage u Ref, DC Forward Current is reference current i Ref, junction temperature is 25 ℃; E Rec1And E Rec2All know through the product description of first fly-wheel diode;
22) the switching frequency measurement module obtains the switching frequency f of an IGBT through the number of measurement unit's SM module trigger impulse in the time ST, the switching frequency f of first fly-wheel diode SDBe the switching frequency f of an IGBT STHalf the;
23) calculate the switching loss P of an IGBT through following formula SwTReverse recovery loss P with first fly-wheel diode SwD:
P swT = ρ T · f sT · ( E on + E off u ref · i ref ) · U C · | i | ‾ P swD = ρ D · f sD · ( E rec u ref · i ref ) · U C · | i | ‾
In the above-mentioned formula, U CBe the average capacitor voltage of SM module, E On, E Off, E RecBe respectively and be defined in an IGBT reference voltage u Ref, an IGBT reference current i RefOppositely recover energy loss with IGBT turn-on consumption, turn-off power loss and first fly-wheel diode under the maximum junction temperature;
24) the switching loss P ' of the 2nd IGBT SwTSwitching loss P with an IGBT SwTComputational methods identical, through step 21)-step 23) obtain the switching loss P ' of the 2nd IGBT SwT
The reverse recovery loss P ' of second fly-wheel diode SwDReverse recovery loss P with a fly-wheel diode SwDComputational methods identical, through step 21)-step 23) obtain the reverse recovery loss P ' of second fly-wheel diode SwD
The total on-state loss P of said IGBT TconBe all SM module I GBT on-state loss sums of modularization multi-level converter, the IGBT on-state loss is the on-state loss P of an IGBT EFOn-state loss P ' with the 2nd IGBT EFSum;
The total on-state loss P of said fly-wheel diode DconBe all SM module fly-wheel diode on-state loss sums of modularization multi-level converter, the fly-wheel diode on-state loss is the on-state loss P of first fly-wheel diode DFOn-state loss P ' with second fly-wheel diode DFSum;
Said IGBT master switch loss P TswBe all SM module I GBT switching loss sums of modularization multi-level converter, the IGBT switching loss is the switching loss P of an IGBT SwTSwitching loss P ' with the 2nd IGBT SwTSum;
The total reverse recovery loss P of said fly-wheel diode DrecBe all SM module fly-wheel diode reverse recovery loss sums of modularization multi-level converter, the fly-wheel diode reverse recovery loss is the reverse recovery loss P of first fly-wheel diode SwDReverse recovery loss P ' with second fly-wheel diode SwDSum;
Said IGBT total losses P TBe the total on-state loss P of IGBT TconWith IGBT master switch loss P TswSum;
Said fly-wheel diode total losses P DBe the total on-state loss P of fly-wheel diode DconWith the total reverse recovery loss P of fly-wheel diode DrecSum;
The total on-state loss P of said modularization multi-level converter ConBe the total on-state loss P of IGBT TconWith the total on-state loss P of fly-wheel diode DconSum;
Said modularization multi-level converter master switch loss P SwBe IGBT master switch loss P TswWith the total reverse recovery loss P of fly-wheel diode DrecSum;
Said modularization multi-level converter total losses P TotBe IGBT total losses P TWith fly-wheel diode total losses P DSum;
Said modularization multi-level converter loss ratio K is the modularization multi-level converter total losses and the ratio of system's total transmission capacity.
Beneficial effect of the present invention is: the first, and avoided among the MMC number of modules more effectively, the manual measurement complexity of calculation, workload reduces greatly, and is efficient and convenient; The second, through the associated electrical tolerance of real-time measurement system, realized the MMC loss in line computation, applied widely, calculate applicable to the loss of the MMC system under any operating state.The 3rd, self-defining module, very convenient in modularization encapsulation in actual engineering, save floor space, improve resource utilization, and this platform is output as all kinds of losses and loss ratio, straightforward, make things convenient for staff's observing system running status at any time.
Description of drawings
Fig. 1 is the modularization multi-level converter topology diagram;
Fig. 2 is each SM modular structure figure of modularization multi-level converter;
Fig. 3 is the curve fitting module functional schematic;
Fig. 4 is a switching frequency measurement module functional schematic;
Fig. 5 is a duty ratio measuring functions of modules sketch map;
Fig. 6 finds the solution the functions of modules sketch map for duty ratio mean value;
Fig. 7 is a loss computing module functional schematic.
Embodiment
Below in conjunction with accompanying drawing the present invention is done further explain.
Technical problem to be solved by this invention is when overcoming the system running state change; During such as the modulation degree change or the system failure; The deficiency that the modularization multi-level converter loss theory of computation and empirical equation applicability reduce; Under PSCAD/EMTDC, the online loss computer general of a kind of effective, real-time modularization multi-level converter platform is provided
The present invention finds the solution module and loss computing module through switching frequency measurement module, duty ratio measuring module, duty ratio mean value under PSCAD/EMTDC, realize that the online loss of modularization multi-level converter is calculated.
As shown in Figure 1; Modularization multi-level converter by A phase brachium pontis, B phase brachium pontis and C mutually brachium pontis form; A phase brachium pontis is gone up brachium pontis mutually by A and is descended brachium pontis to form mutually with A; B phase brachium pontis is gone up brachium pontis mutually by B and is descended brachium pontis to form mutually with B, and C phase brachium pontis is gone up brachium pontis mutually by C and descended brachium pontis to form mutually with C, and A goes up brachium pontis, A mutually and descends brachium pontis, B to go up brachium pontis, B mutually mutually to descend brachium pontis, C to go up brachium pontis mutually mutually to descend being in series by n SM module of the 1st SM module to the of brachium pontis mutually with C;
As shown in Figure 2, the structure of n SM module of the 1st SM module to the is identical, and the structure of each SM module is following: an IGBT who is parallel with first fly-wheel diode connects with the 2nd IGBT that is parallel with second fly-wheel diode, connects with capacitor C then.
Each SM module loss is divided into the loss of an IGBT, the 2nd IGBT, first fly-wheel diode and second fly-wheel diode; The one IGBT loss is divided into the steady-state loss of an IGBT and the switching loss of an IGBT again; The 2nd IGBT loss is divided into the steady-state loss of the 2nd IGBT and the switching loss of the 2nd IGBT again; The steady-state loss of the one IGBT is divided into the drive loss of an on-state loss and the IGBT of an IGBT; The steady-state loss of the 2nd IGBT is divided into the drive loss of on-state loss and the 2nd IGBT of the 2nd IGBT; The switching loss of the one IGBT is divided into the turn-on consumption of an IGBT and the turn-off power loss of an IGBT, and the switching loss of the 2nd IGBT is divided into the turn-on consumption of the 2nd IGBT and the turn-off power loss of the 2nd IGBT.
The first fly-wheel diode loss is divided into the reverse recovery loss of the on-state loss and first fly-wheel diode of first fly-wheel diode, and the second fly-wheel diode loss is divided into the reverse recovery loss of the on-state loss and second fly-wheel diode of second fly-wheel diode.Wherein the drive loss of an IGBT and the 2nd IGBT is very little; Can ignore, so mainly the on-state loss of an IGBT, the on-state loss of the 2nd IGBT, the on-state loss of first fly-wheel diode, the on-state loss of second fly-wheel diode, the switching loss of an IGBT, the switching loss of the 2nd IGBT, the reverse recovery loss of first fly-wheel diode, the reverse recovery loss of second fly-wheel diode are calculated among the present invention.
The online loss computational methods of a kind of modularization multi-level converter may further comprise the steps:
1) obtains A phase brachium pontis current i through measuring a, B phase brachium pontis current i b, C phase brachium pontis current i cWith the working temperature t of current environment, calculate the on-state loss of an IGBT, the 2nd IGBT, first fly-wheel diode and second fly-wheel diode in each SM module then:
Step 1) specifically may further comprise the steps:
11) from product description, obtain following four curves: the collection emitter voltage V ' of IGBT when temperature is 25 ℃ CEWith collector current I CRelation curve, the collection emitter voltage V of IGBT when temperature is 125 ℃ CEWith collector current I CRelation curve, the forward conduction voltage V ' of first fly-wheel diode when temperature is 25 ℃ F-DC Forward Current I FThe forward conduction voltage V of relation curve and temperature first fly-wheel diode when being 125 ℃ F-DC Forward Current I FRelation curve;
12) the collection emitter voltage V of an IGBT when temperature is 125 ℃ CEWith collector current I CRelation curve in, obtain following N group data through trace-point method: (I C1, V CE1), (I C2, V CE2) ... (I CN, V CEN), wherein, I C1-I CNBe the collector current value of an IGBT, V CE1-V CENBe an IGBT collector current value to be I C1-I CNThe time the one IGBT collection emitter voltage value, 1≤N≤100; To (I C1, V CE1), (I C2, V CE2) ... (I CN, V CEN) this N group data carry out the high order curve match in MATLAB (MATLAB is the abbreviation of matrix experiment chamber (Matrix Laboratory)), an IGBT collection emitter voltage V when obtaining temperature and being 125 ℃ CEWith collector current I CRelationship;
According to formula: R T1=V CE1/ I C1, R T2=V CE2/ I C2... R TN=V CEN/ I CNObtain: when an IGBT collector current value is I C1-I CNThe time the one IGBT the on state resistance value be R T1-R TN, and then obtain following N group data: (I C1, R T1), (I C2, R T2) ... (I CN, R TN); To (I C1, R T1), (I C2, R T2) ... (I CN, R TN) this N group data carry out the high order curve match in MATLAB, the on state resistance R of an IGBT when obtaining temperature and being 125 ℃ TWith collector current I CRelationship;
13) the first fly-wheel diode forward conduction voltage V when temperature is 125 ℃ F-DC Forward Current I FRelation curve in, obtain following M group data through trace-point method: (I F1, V F1), (I F2, V F2) ... (I FM, V FM), wherein, I F1-I FMBe the DC Forward Current value of first fly-wheel diode, V F1-V FMBe that DC Forward Current value when first fly-wheel diode is I F1-I FMThe time first fly-wheel diode the forward conduction magnitude of voltage, 1≤M≤100; To (I F1, V F1), (I F2, V F2) ... (I FM, V FM) this M group data carry out the high order curve match in MATLAB, the first fly-wheel diode forward conduction voltage V when obtaining temperature and being 125 ℃ FWith DC Forward Current I FRelationship;
According to formula: R D1=V F1/ I F1, R D2=V F2/ I F2... R DM=V CEM/ I CMThe DC Forward Current value that obtains when first fly-wheel diode is I F1-I FMThe time first fly-wheel diode on state resistance value R D1-R DM, and then obtain following M group data: (I F1, R D1), (I F2, R D2) ... (I FM, R DM); To (I F1, R D1), (I F2, R D2) ... (I FM, R DM) this M group data carry out the high order curve match in MATLAB, the first fly-wheel diode on state resistance R when obtaining temperature and being 125 ℃ DWith DC Forward Current I FRelationship;
14) four curves in the step 11) are carried out interpolation arithmetic by following formula:
α T = 1 V CE [ V CE - V CE ′ 100 ( t - 25 ) + V CE ′ ]
α D = 1 V F ′ [ V F ′ - V F 100 ( t - 25 ) + V F ]
Obtain the junction temperature alpha of the on-state loss of an IGBT and the 2nd IGBT TJunction temperature alpha with the on-state loss of first fly-wheel diode and second fly-wheel diode D, in the above-mentioned formula, t is the working temperature of current environment;
15) as shown in Figure 3, in curve fitting module, calculate the threshold voltage V such as real-time on-state of an IGBT through following formula CEX, first fly-wheel diode threshold voltage V such as real-time on-state DX, an IGBT real-time on-state substitutional resistance R TXReal-time on-state substitutional resistance R with first fly-wheel diode DX:
V CEX=α T×V CE
V DX=α D×V F
R TX=α T×R T
R DX=α D×R D
16) with V CEXAnd R TXThe following formula of substitution is through calculating the middle on-state loss P of an IGBT EFS:
V EF = V CEX + R TX · i I EF = | i | ‾ · i ^ P EFS = i · V EF
In the above formula, the upper and lower bridge arm electric current that flows into modularization multi-level converter is i, in A phase brachium pontis, and i=i a, in B phase brachium pontis, i=i b, in C phase brachium pontis, i=i c, V EFBe the threshold voltages such as on-state of IGBT, I EFBe the equivalent electric current of the on-state of IGBT,
Figure BDA0000117311260000162
Be the peak value of brachium pontis electric current,
Figure BDA0000117311260000163
It is the arithmetic mean of brachium pontis electric current; In real work, I C=i, integrating step 12)-step 15) finds out: V CEXAnd R TXBe the function of t and i, so, P EFFunction for t and i;
With V DXAnd R DXThe following formula of substitution is through calculating the middle on-state loss P of first fly-wheel diode DFS:
V DF = V DX + R DX · i I DF = | i | ‾ · i ^ P DFS = i · V DF
In the above formula, the upper and lower bridge arm electric current that flows into modularization multi-level converter is i, V DFBe the threshold voltages such as on-state of fly-wheel diode, I DFBe the equivalent electric current of the on-state of fly-wheel diode; In real work, I F=i, integrating step 12)-step 15) finds out: V DXAnd R DXBe the function of t and i, so, P DFSFunction for t and i;
17) the middle on-state loss P ' of the 2nd IGBT EFSMiddle on-state loss P with an IGBT EFSComputational methods identical, through step 11)-step 16) draw the threshold voltage V ' such as real-time on-state of the 2nd IGBT CEX, the 2nd IGBT real-time on-state substitutional resistance R ' TXMiddle on-state loss P ' with the 2nd IGBT EFS
The middle on-state loss P ' of second fly-wheel diode DFSMiddle on-state loss P with first fly-wheel diode DFSComputational methods identical, through step 11)-step 16) draw the threshold voltage V ' such as real-time on-state of second fly-wheel diode DX, second fly-wheel diode real-time on-state substitutional resistance R ' DXMiddle on-state loss P ' with second fly-wheel diode DFS
18) find the solution the mean value s4 of the duty ratio of second fly-wheel diode in mean value s3 and all the SM modules of the duty ratio of first fly-wheel diode among the mean value s2, all SM modules of the duty ratio of the 2nd IGBT among the mean value s1, all SM modules of the duty ratio of an IGBT in every all SM modules;
19) calculate the on-state loss P of an IGBT through following formula EF, the 2nd IGBT on-state loss P ' EF, first fly-wheel diode on-state loss P DFOn-state loss P ' with second fly-wheel diode DF:
P EF=s1×P EFS
P′ EF=s2×P′ EFS
P EF ′ = s 2 × P EFS ′
P DF=s3×P DFS
P′ DF=s4×P′ DFS
Step 18) specifically may further comprise the steps;
181) as shown in Figure 5; Simulation time t1 and described point step-length h are inputed in the duty ratio measuring module; The duty ratio measuring module is through gathering the current signal that flows through an IGBT, the 2nd IGBT, first fly-wheel diode and second fly-wheel diode in each SM module; Off state is opened in judgement, obtains the duty ratio of an IGBT, the 2nd IGBT, first fly-wheel diode and second fly-wheel diode in each SM module;
182) as shown in Figure 6; Duty ratio mean value is found the solution module and respectively the duty ratio of second fly-wheel diode in the duty ratio of first fly-wheel diode in the duty ratio of the 2nd IGBT in the duty ratio of an IGBT in each SM module, each SM module, each SM module and each the SM module is averaged, and output is respectively the mean value s4 of the duty ratio of second fly-wheel diode in mean value s3 and all the SM modules of the duty ratio of first fly-wheel diode among the mean value s2, all SM modules of the duty ratio of the 2nd IGBT among the mean value s1, all SM modules of the duty ratio of an IGBT in all SM modules.
The switching loss of IGBT and fly-wheel diode reverse recovery loss are the dynamic losss in break-over of device and the turn off process; In theory can be through asking definite integral to come the switching loss of calculating device to the product of electric current and voltage; But provide the function of time of the voltage and current of switching process, very difficulty.The present invention is through step 2) calculate switching loss and the fly-wheel diode reverse recovery loss of IGBT.
2) calculate an IGBT and the switching loss of the 2nd IGBT and the reverse recovery loss of first fly-wheel diode and second fly-wheel diode in each SM module;
Step 2) specifically may further comprise the steps
21) utilize interpolation to introduce the junction temperature coefficient ρ of the switching loss of an IGBT TThe junction temperature coefficient ρ of (in the temperature range that an IGBT can bear) and the first fly-wheel diode reverse recovery loss D(in the temperature range that first fly-wheel diode can bear) calculated both with variation of temperature, and its computing formula is following:
ρ T = 1 E SW 1 [ E SW 1 - E SW 2 100 ( t - 25 ) + E SW 2 ]
ρ D = 1 E rec 1 [ E rec 1 - E rec 2 100 ( t - 25 ) + E rec 2 ]
In the above-mentioned formula, E Sw1Be the energy loss in the switching process of an IGBT when meeting the following conditions: an IGBT supply voltage V CcBe reference voltage u Ref, the rated current electric current is reference current i Ref, junction temperature is 125 ℃; E Sw2Be the energy loss in the switching process of an IGBT when meeting the following conditions: an IGBT supply voltage V CcBe reference voltage u Ref, rated current is reference current i Ref, junction temperature is 25 ℃; E Sw1And E Sw2All know through the product description of an IGBT; In the reality, two IGBT of each SM module the inside adopt same model usually, so relevant parameters such as the reference voltage of the 2nd IGBT, reference current are all identical with an IGBT.
E Rec1Be the reverse recovery energy loss of first fly-wheel diode when meeting the following conditions: voltage is reference voltage u Ref, DC Forward Current is reference current i Ref, junction temperature is 125 ℃; E Rec2Be the reverse recovery energy loss of first fly-wheel diode when meeting the following conditions: voltage is reference voltage u Ref, DC Forward Current is reference current i Ref, junction temperature is 25 ℃; E Rec1And E Rec2All know through the product description of first fly-wheel diode; In each SM module, the reference voltage of first fly-wheel diode, reference current are identical with an IGBT, and the reference voltage of second fly-wheel diode, reference current are identical with the 2nd IGBT.
22) as shown in Figure 4, for the switching loss of computing module multilevel converter more accurately, need to measure in real time the switching frequency of an IGBT.For this reason, the switching frequency measurement module obtains the switching frequency f of an IGBT through the number of measurement unit's SM module trigger impulse in the time STWith the switching frequency (both equate) of the 2nd IGBT, but the switching frequency of first fly-wheel diode can't directly record.Yet IGBT opens and when having electric current to flow through, first fly-wheel diode is in off state in each SM module; First fly-wheel diode is opened and when having electric current to flow through, an IGBT also is in opening state does not just have electric current to flow through, therefore, and the switching frequency f of an IGBT STBe the first fly-wheel diode switching frequency f SDTwice.
23) calculate the switching loss P of an IGBT through following formula SwTReverse recovery loss P with first fly-wheel diode SwD:
P swT = ρ T · f sT · ( E on + E off u ref · i ref ) · U C · | i | ‾ P swD = ρ D · f sD · ( E rec u ref · i ref ) · U C · | i | ‾
In the above-mentioned formula, U CBe the average capacitor voltage of SM module, E On, E Off, E RecBe respectively and be defined in an IGBT reference voltage u Ref, an IGBT reference current i RefOppositely recover energy loss with IGBT turn-on consumption, turn-off power loss and FWD under 125 ℃ of working junction temperatures;
24) the switching loss P ' of the 2nd IGBT SwTSwitching loss P with an IGBT SwTComputational methods identical, through step 21)-step 23) obtain the switching loss P ' of the 2nd IGBT SwT
The reverse recovery loss P ' of second fly-wheel diode SwDReverse recovery loss P with a fly-wheel diode SwDComputational methods identical, through step 21)-step 23) obtain the reverse recovery loss P ' of second fly-wheel diode SwD
3) as shown in Figure 7, with IGBT module parameter (V CE, V d, R t, R d, α T, α D, ρ T, ρ D), U c, t, i a, i b, i c, the switching frequency of two IGBT and two fly-wheel diodes inputs in the loss computing module among the s1, s2, s3, s4, each SM module, calculates the total on-state loss P of IGBT through the loss computing module Tcon, the total on-state loss P of fly-wheel diode Dcon, IGBT master switch loss P Tsw, the total reverse recovery loss P of fly-wheel diode Drec, IGBT total losses P T, fly-wheel diode total losses P D, the total on-state loss P of modularization multi-level converter Con, modularization multi-level converter master switch loss P Sw, modularization multi-level converter total losses P TotWith modularization multi-level converter loss ratio K.
The total on-state loss P of IGBT TconBe all SM module I GBT on-state loss sums of modularization multi-level converter, the IGBT on-state loss is the on-state loss P of an IGBT EFOn-state loss P ' with the 2nd IGBT EFSum;
The total on-state loss P of fly-wheel diode DconBe all SM module fly-wheel diode on-state loss sums of modularization multi-level converter, the fly-wheel diode on-state loss is the on-state loss P of first fly-wheel diode DFOn-state loss P ' with second fly-wheel diode DFSum;
IGBT master switch loss P TswBe all SM module I GBT switching loss sums of modularization multi-level converter, the IGBT switching loss is the switching loss P of an IGBT SwTSwitching loss P ' with the 2nd IGBT SwTSum;
The total reverse recovery loss P of fly-wheel diode DrecBe all SM module fly-wheel diode reverse recovery loss sums of modularization multi-level converter, the fly-wheel diode reverse recovery loss is the reverse recovery loss P of first fly-wheel diode SwDReverse recovery loss P ' with second fly-wheel diode SwDSum;
IGBT total losses P TBe the total on-state loss P of IGBT TconWith IGBT master switch loss P TswSum;
Fly-wheel diode total losses P DBe the total on-state loss P of fly-wheel diode DconWith the total reverse recovery loss P of fly-wheel diode DrecSum;
The total on-state loss P of modularization multi-level converter ConBe the total on-state loss P of IGBT TconWith the total on-state loss P of fly-wheel diode DconSum;
Modularization multi-level converter master switch loss P SwBe IGBT master switch loss P TswWith the total reverse recovery loss P of fly-wheel diode DrecSum;
Modularization multi-level converter total losses P TotBe IGBT total losses P TWith fly-wheel diode total losses P DSum;
Said modularization multi-level converter loss ratio K is the modularization multi-level converter total losses and the ratio of system's total transmission capacity.System's total transmission capacity is the set point of a modularization multi-level converter, and for a fixing modularization multi-level converter, its capacity confirms, can be through measuring.

Claims (5)

1. online loss computational methods of modularization multi-level converter is characterized in that it may further comprise the steps:
1) obtains A phase brachium pontis current i through measuring a, B phase brachium pontis current i b, C phase brachium pontis current i cWith the working temperature t of current environment, calculate the on-state loss of an IGBT, the 2nd IGBT, first fly-wheel diode and second fly-wheel diode in each SM module then:
2) calculate an IGBT and the switching loss of the 2nd IGBT and the reverse recovery loss of first fly-wheel diode and second fly-wheel diode in each SM module;
3) calculate the total on-state loss P of IGBT through the loss computing module Tcon, the total on-state loss P of fly-wheel diode Dcon, IGBT master switch loss P Tsw, the total reverse recovery loss P of fly-wheel diode Drec, IGBT total losses P T, fly-wheel diode total losses P D, the total on-state loss P of modularization multi-level converter Con, modularization multi-level converter master switch loss P Sw, modularization multi-level converter total losses P TotWith modularization multi-level converter loss ratio K.
2. the online loss computational methods of a kind of modularization multi-level converter according to claim 1 is characterized in that said step 1) specifically may further comprise the steps:
11) from product description, obtain following four curves: the collection emitter voltage V ' of IGBT when temperature is 25 ℃ CEWith collector current I CRelation curve, the collection emitter voltage V of IGBT when temperature is 125 ℃ CEWith collector current I CRelation curve, the forward conduction voltage V ' of first fly-wheel diode when temperature is 25 ℃ F-DC Forward Current I FThe forward conduction voltage V of relation curve and temperature first fly-wheel diode when being 125 ℃ F-DC Forward Current I FRelation curve;
12) the collection emitter voltage V of an IGBT when temperature is 125 ℃ CEWith collector current I CRelation curve in, obtain following N group data through trace-point method: (I C1, V CE1), (I C2, V CE2) ... (I CN, V CEN), wherein, I C1-I CNBe the collector current value of an IGBT, V CE1-V CENBe an IGBT collector current value to be I C1-I CNThe time the one IGBT collection emitter voltage value, 1≤N≤100; To (I C1, V CE1), (I C2, V CE2) ... (I CN, V CEN) this N group data carry out the high order curve match in MATLAB, an IGBT collection emitter voltage V when obtaining temperature and being 125 ℃ CEWith collector current I CRelationship;
According to formula: R T1=V CE1/ I C1, R T2=V CE2/ I C2... R TN=V CEN/ I CNObtain: when an IGBT collector current value is I C1-I CNThe time the one IGBT the on state resistance value be R T1-R TN, and then obtain following N group data: (I C1, R T1), (I C2, R T2) ... (I CN, R TN); To (I C1, R T1), (I C2, R T2) ... (I CN, R TN) this N group data carry out the high order curve match in MATLAB, the on state resistance R of an IGBT when obtaining temperature and being 125 ℃ TWith collector current I CRelationship;
13) the first fly-wheel diode forward conduction voltage V when temperature is 125 ℃ F-DC Forward Current I FRelation curve in, obtain following M group data through trace-point method: (I F1, V F1), (I F2, V F2) ... (I FM, V FM), wherein, I F1-I FMBe the DC Forward Current value of first fly-wheel diode, V F1-V FMBe that DC Forward Current value when first fly-wheel diode is I F1-I FMThe time first fly-wheel diode the forward conduction magnitude of voltage, 1≤M≤100; To (I F1, V F1), (I F2, V F2) ... (I FM, V FM) this M group data carry out the high order curve match in MATLAB, the first fly-wheel diode forward conduction voltage V when obtaining temperature and being 125 ℃ FWith DC Forward Current I FRelationship;
According to formula: R D1=V F1/ I F1, R D2=V F2/ I F2... R DM=V CEM/ I CMThe DC Forward Current value that obtains when first fly-wheel diode is I F1-I FMThe time first fly-wheel diode on state resistance value R D1-R DM, and then obtain following M group data: (I F1, R D1), (I F2, R D2) ... (I FM, R DM); To (I F1, R D1), (I F2, R D2) ... (I FM, R DM) this M group data carry out the high order curve match in MATLAB, the first fly-wheel diode on state resistance R when obtaining temperature and being 125 ℃ DWith DC Forward Current I FRelationship;
14) four curves in the step 11) are carried out interpolation arithmetic by following formula:
α T = 1 V CE [ V CE - V CE ′ 100 ( t - 25 ) + V CE ′ ]
α D = 1 V F ′ [ V F ′ - V F 100 ( t - 25 ) + V F ]
Obtain the junction temperature alpha of the on-state loss of an IGBT and the 2nd IGBT TJunction temperature alpha with the on-state loss of first fly-wheel diode and second fly-wheel diode D, in the above-mentioned formula, t is the working temperature of current environment;
15) in curve fitting module, calculate the threshold voltage V such as real-time on-state of an IGBT through following formula CEX, first fly-wheel diode threshold voltage V such as real-time on-state DX, an IGBT real-time on-state substitutional resistance R TXReal-time on-state substitutional resistance R with first fly-wheel diode DX:
V CEX=α T×V CE
V DX=α D×V F
R TX=α T×R T
R DX=α D×R D
16) with V CEXAnd R TXThe following formula of substitution is through calculating the middle on-state loss P of an IGBT EFS:
V EF = V CEX + R TX · i I EF = | i | ‾ · i ^ P EFS = i · V EF
In the above formula, the upper and lower bridge arm electric current that flows into modularization multi-level converter is i, in A phase brachium pontis, and i=i a, in B phase brachium pontis, i=i b, in C phase brachium pontis, i=i c, V EFBe the threshold voltages such as on-state of IGBT, I EFBe the equivalent electric current of the on-state of IGBT,
Figure FDA0000117311250000042
Be the peak value of brachium pontis electric current,
Figure FDA0000117311250000043
It is the arithmetic mean of brachium pontis electric current; In real work, I C=i, integrating step 12)-step 15) finds out: V CEXAnd R TXBe the function of t and i, so, P EFFunction for t and i;
With V DXAnd R DXThe following formula of substitution is through calculating the middle on-state loss P of first fly-wheel diode DFS:
V DF = V DX + R DX · i I DF = | i | ‾ · i ^ P DFS = i · V DF
In the above formula, the upper and lower bridge arm electric current that flows into modularization multi-level converter is i, V DFBe the threshold voltages such as on-state of fly-wheel diode, I DFBe the equivalent electric current of the on-state of fly-wheel diode; In real work, I F=i, integrating step 12)-step 15) finds out: V DXAnd R DXBe the function of t and i, so, P DFSFunction for t and i;
17) the middle on-state loss P ' of the 2nd IGBT EFSMiddle on-state loss P with an IGBT EFSComputational methods identical, through step 11)-step 16) draw the threshold voltage V ' such as real-time on-state of the 2nd IGBT CEX, the 2nd IGBT real-time on-state substitutional resistance R ' TXMiddle on-state loss P ' with the 2nd IGBT EFS
The middle on-state loss P ' of second fly-wheel diode DFSMiddle on-state loss P with first fly-wheel diode DFSComputational methods identical, through step 11)-step 16) draw the threshold voltage V ' such as real-time on-state of second fly-wheel diode DX, second fly-wheel diode real-time on-state substitutional resistance R ' DXMiddle on-state loss P ' with second fly-wheel diode DFS
18) find the solution the mean value s4 of the duty ratio of second fly-wheel diode in mean value s3 and all the SM modules of the duty ratio of first fly-wheel diode among the mean value s2, all SM modules of the duty ratio of the 2nd IGBT among the mean value s1, all SM modules of the duty ratio of an IGBT in every all SM modules;
19) calculate the on-state loss P of an IGBT through following formula EF, the 2nd IGBT on-state loss P ' EF, first fly-wheel diode on-state loss P DFOn-state loss P ' with second fly-wheel diode DF:
P EF=s1×P EFS
P′ EF=s2×P′ EFS
P DF=s3×P DFS
P′ DF=s4×P′ DFS
3. the online loss computational methods of a kind of modularization multi-level converter according to claim 2 is characterized in that said step 18) specifically may further comprise the steps;
181) simulation time t1 and described point step-length h are inputed in the duty ratio measuring module; The duty ratio measuring module is through gathering the current signal that flows through an IGBT, the 2nd IGBT, first fly-wheel diode and second fly-wheel diode in each SM module; Off state is opened in judgement, obtains the duty ratio of an IGBT, the 2nd IGBT, first fly-wheel diode and second fly-wheel diode in each SM module;
182) duty ratio mean value is found the solution module and respectively the duty ratio of second fly-wheel diode in the duty ratio of first fly-wheel diode in the duty ratio of the 2nd IGBT in the duty ratio of an IGBT in each SM module, each SM module, each SM module and each the SM module is averaged, and output is respectively the mean value s4 of the duty ratio of second fly-wheel diode in mean value s3 and all the SM modules of the duty ratio of first fly-wheel diode among the mean value s2, all SM modules of the duty ratio of the 2nd IGBT among the mean value s1, all SM modules of the duty ratio of an IGBT in all SM modules.
4. the online loss computational methods of a kind of modularization multi-level converter according to claim 1 is characterized in that said step 2) specifically may further comprise the steps
21) utilize interpolation to introduce the junction temperature coefficient ρ of the switching loss of an IGBT TJunction temperature coefficient ρ with the first fly-wheel diode reverse recovery loss D, calculate both with variation of temperature, its computing formula is following:
ρ T = 1 E SW 1 [ E SW 1 - E SW 2 100 ( t - 25 ) + E SW 2 ]
ρ D = 1 E rec 1 [ E rec 1 - E rec 2 100 ( t - 25 ) + E rec 2 ]
In the above-mentioned formula, E Sw1Be the energy loss in the switching process of an IGBT when meeting the following conditions: an IGBT supply voltage V CcBe reference voltage u Ref, the rated current electric current is reference current i Ref, junction temperature is 125 ℃; E Sw2Be the energy loss in the switching process of an IGBT when meeting the following conditions: an IGBT supply voltage V CcBe reference voltage u Ref, rated current is reference current i Ref, junction temperature is 25 ℃; E Sw1And E Sw2All know through the product description of an IGBT;
E Rec1Be the reverse recovery energy loss of first fly-wheel diode when meeting the following conditions: voltage is reference voltage u Ref, DC Forward Current is reference current i Ref, junction temperature is 125 ℃; E Rec2Be the reverse recovery energy loss of first fly-wheel diode when meeting the following conditions: voltage is reference voltage u Ref, DC Forward Current is reference current i Ref, junction temperature is 25 ℃; E Rec1And E Rec2All know through the product description of first fly-wheel diode;
22) the switching frequency measurement module obtains the switching frequency f of an IGBT through the number of measurement unit's SM module trigger impulse in the time ST, the switching frequency f of first fly-wheel diode SDBe the switching frequency f of an IGBT STHalf the;
23) calculate the switching loss P of an IGBT through following formula SwTReverse recovery loss P with first fly-wheel diode SwD:
P swT = ρ T · f sT · ( E on + E off u ref · i ref ) · U C · | i | ‾ P swD = ρ D · f sD · ( E rec u ref · i ref ) · U C · | i | ‾
In the above-mentioned formula, U CBe the average capacitor voltage of SM module, E On, E Off, E RecBe respectively and be defined in an IGBT reference voltage u Ref, an IGBT reference current i RefOppositely recover energy loss with IGBT turn-on consumption, turn-off power loss and first fly-wheel diode under the maximum junction temperature;
24) the switching loss P ' of the 2nd IGBT SwTSwitching loss P with an IGBT SwTComputational methods identical, through step 21)-step 23) obtain the switching loss P ' of the 2nd IGBT SwT
The reverse recovery loss P ' of second fly-wheel diode SwDReverse recovery loss P with a fly-wheel diode SwDComputational methods identical, through step 21)-step 23) obtain the reverse recovery loss P ' of second fly-wheel diode SwD
5. the online loss computational methods of a kind of modularization multi-level converter according to claim 1 is characterized in that, the total on-state loss P of said IGBT TconBe all SM module I GBT on-state loss sums of modularization multi-level converter, the IGBT on-state loss is the on-state loss P of an IGBT EFOn-state loss P ' with the 2nd IGBT EFSum;
The total on-state loss P of said fly-wheel diode DconBe all SM module fly-wheel diode on-state loss sums of modularization multi-level converter, the fly-wheel diode on-state loss is the on-state loss P of first fly-wheel diode DFOn-state loss P ' with second fly-wheel diode DFSum;
Said IGBT master switch loss P TswBe all SM module I GBT switching loss sums of modularization multi-level converter, the IGBT switching loss is the switching loss P of an IGBT SwTSwitching loss P ' with the 2nd IGBT SwTSum;
The total reverse recovery loss P of said fly-wheel diode DrecBe all SM module fly-wheel diode reverse recovery loss sums of modularization multi-level converter, the fly-wheel diode reverse recovery loss is the reverse recovery loss P of first fly-wheel diode SwDReverse recovery loss P ' with second fly-wheel diode SwDSum;
Said IGBT total losses P TBe the total on-state loss P of IGBT TconWith IGBT master switch loss P TswSum;
Said fly-wheel diode total losses P DBe the total on-state loss P of fly-wheel diode DconWith the total reverse recovery loss P of fly-wheel diode DrecSum;
The total on-state loss P of said modularization multi-level converter ConBe the total on-state loss P of IGBT TconWith the total on-state loss P of fly-wheel diode DconSum;
Said modularization multi-level converter master switch loss P SwBe IGBT master switch loss P TswWith the total reverse recovery loss P of fly-wheel diode DrecSum;
Said modularization multi-level converter total losses P TotBe IGBT total losses P TWith fly-wheel diode total losses P DSum;
Said modularization multi-level converter loss ratio K is the modularization multi-level converter total losses and the ratio of system's total transmission capacity.
CN201110404663.6A 2011-12-08 2011-12-08 Online loss calculation method for modular multilevel converter Expired - Fee Related CN102570864B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201110404663.6A CN102570864B (en) 2011-12-08 2011-12-08 Online loss calculation method for modular multilevel converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201110404663.6A CN102570864B (en) 2011-12-08 2011-12-08 Online loss calculation method for modular multilevel converter

Publications (2)

Publication Number Publication Date
CN102570864A true CN102570864A (en) 2012-07-11
CN102570864B CN102570864B (en) 2014-08-06

Family

ID=46415492

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201110404663.6A Expired - Fee Related CN102570864B (en) 2011-12-08 2011-12-08 Online loss calculation method for modular multilevel converter

Country Status (1)

Country Link
CN (1) CN102570864B (en)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102158103A (en) * 2011-03-25 2011-08-17 华北电力大学 Method for calculating DC (Direct Current) transmission loss of modular multilevel converter
CN103324843A (en) * 2013-06-09 2013-09-25 浙江大学 Modular multilevel converter (MMC) valve loss calculation method applicable to different sub-module types
CN103715935A (en) * 2013-11-27 2014-04-09 国家电网公司 Modularized multi-level voltage source type converter-based loss determination method
CN103914599A (en) * 2014-04-18 2014-07-09 华北电力大学 Theven equivalent overall modeling method of modularized multi-level converter (MMC)
CN103995981A (en) * 2014-06-06 2014-08-20 中国能源建设集团广东省电力设计研究院 Method for assessing loss of MMC current converter in flexible direct-current transmission system
CN104217130A (en) * 2014-09-23 2014-12-17 国家电网公司 Method for calculating loss of MMC (Modular Multilevel Converter)
CN104569648A (en) * 2013-10-09 2015-04-29 福特全球技术公司 System and method for measuring switching loss associated with semiconductor switching devices
CN104615842A (en) * 2014-10-08 2015-05-13 中国南方电网有限责任公司电网技术研究中心 Loss calculation method for power devices of full-bridge modular multi-level converter
CN104915506A (en) * 2015-06-19 2015-09-16 南车株洲电力机车研究所有限公司 Modeling method used for power consumption calculation of converter
CN104992016A (en) * 2015-06-30 2015-10-21 上海交通大学 Modular multilevel converter loss estimation method
CN105811771A (en) * 2014-12-30 2016-07-27 国家电网公司 Method for determining loss of MMC isolation type DC/DC converter switch
CN105808901A (en) * 2014-12-29 2016-07-27 国家电网公司 Method for determining on-state loss of modularized multilevel converter
CN106712072A (en) * 2017-02-28 2017-05-24 湖南大学 Voltage class optimization design method for flexible direct current transmission system
CN106887942A (en) * 2015-12-11 2017-06-23 南车株洲电力机车研究所有限公司 Current transformer phase module loss computing method, device and current transformer loss computing method
CN107525990A (en) * 2017-09-18 2017-12-29 天津农学院 Multi-level power converter condition monitoring system and power device loss computing method
CN108595777A (en) * 2018-04-02 2018-09-28 北京新能源汽车股份有限公司 Switching device power attenuation computational methods, device and equipment in circuit
CN109991872A (en) * 2017-12-29 2019-07-09 上海科梁信息工程股份有限公司 A kind of Modular multilevel converter emulation mode
CN110399647A (en) * 2019-07-01 2019-11-01 南方电网科学研究院有限责任公司 A kind of flexible direct current converter valve loss computing method, device and equipment
CN111596160A (en) * 2020-06-16 2020-08-28 全球能源互联网研究院有限公司 MMC converter valve submodule online monitoring method and system

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102013825A (en) * 2010-11-30 2011-04-13 中国南方电网有限责任公司电网技术研究中心 Loss analysis method for diode clamping type three-level voltage source converter (VSC)
CN102158103A (en) * 2011-03-25 2011-08-17 华北电力大学 Method for calculating DC (Direct Current) transmission loss of modular multilevel converter

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102013825A (en) * 2010-11-30 2011-04-13 中国南方电网有限责任公司电网技术研究中心 Loss analysis method for diode clamping type three-level voltage source converter (VSC)
CN102158103A (en) * 2011-03-25 2011-08-17 华北电力大学 Method for calculating DC (Direct Current) transmission loss of modular multilevel converter

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
潘武略等: "电压源换流器型直流输电换流器损耗分析", 《中国电机工程学报》, vol. 28, no. 21, 25 July 2008 (2008-07-25), pages 7 - 14 *
赵成勇等: "柔性直流输电系统的换流器损耗分析", 《中国高等学校电力系统及其自动化专业第二十七届学术年会 》, 15 October 2011 (2011-10-15) *

Cited By (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102158103B (en) * 2011-03-25 2013-03-06 华北电力大学 Method for calculating DC (Direct Current) transmission loss of modular multilevel converter
CN102158103A (en) * 2011-03-25 2011-08-17 华北电力大学 Method for calculating DC (Direct Current) transmission loss of modular multilevel converter
CN103324843A (en) * 2013-06-09 2013-09-25 浙江大学 Modular multilevel converter (MMC) valve loss calculation method applicable to different sub-module types
CN103324843B (en) * 2013-06-09 2016-04-06 浙江大学 A kind of MMC valve loss computing method being applicable to different sub-module types
CN104569648A (en) * 2013-10-09 2015-04-29 福特全球技术公司 System and method for measuring switching loss associated with semiconductor switching devices
CN104569648B (en) * 2013-10-09 2020-07-10 福特全球技术公司 System and method for measuring switching losses associated with semiconductor switching devices
WO2015078367A1 (en) * 2013-11-27 2015-06-04 国家电网公司 Loss determination method based on modular multi-level voltage source converter
CN103715935B (en) * 2013-11-27 2016-09-28 国家电网公司 A kind of loss based on modular multilevel voltage source converter determines method
CN103715935A (en) * 2013-11-27 2014-04-09 国家电网公司 Modularized multi-level voltage source type converter-based loss determination method
CN103914599A (en) * 2014-04-18 2014-07-09 华北电力大学 Theven equivalent overall modeling method of modularized multi-level converter (MMC)
CN103914599B (en) * 2014-04-18 2017-01-04 华北电力大学 A kind of Dai Weinan equivalence Holistic modeling method of modularization multi-level converter
CN103995981A (en) * 2014-06-06 2014-08-20 中国能源建设集团广东省电力设计研究院 Method for assessing loss of MMC current converter in flexible direct-current transmission system
CN104217130A (en) * 2014-09-23 2014-12-17 国家电网公司 Method for calculating loss of MMC (Modular Multilevel Converter)
CN104615842A (en) * 2014-10-08 2015-05-13 中国南方电网有限责任公司电网技术研究中心 Loss calculation method for power devices of full-bridge modular multi-level converter
CN104615842B (en) * 2014-10-08 2018-08-07 中国南方电网有限责任公司电网技术研究中心 A kind of bridge-type modularization multi-level converter power device loss computing method
CN105808901A (en) * 2014-12-29 2016-07-27 国家电网公司 Method for determining on-state loss of modularized multilevel converter
CN105811771B (en) * 2014-12-30 2018-10-09 国家电网公司 A kind of determination method based on the loss of MMC isolated form DC/DC converter switches
CN105811771A (en) * 2014-12-30 2016-07-27 国家电网公司 Method for determining loss of MMC isolation type DC/DC converter switch
CN104915506A (en) * 2015-06-19 2015-09-16 南车株洲电力机车研究所有限公司 Modeling method used for power consumption calculation of converter
CN104915506B (en) * 2015-06-19 2019-07-02 南车株洲电力机车研究所有限公司 A kind of modeling method for current transformer power consumption calculation
CN104992016A (en) * 2015-06-30 2015-10-21 上海交通大学 Modular multilevel converter loss estimation method
CN104992016B (en) * 2015-06-30 2019-01-11 上海交通大学 Modular multi-level converter loss estimation method
CN106887942A (en) * 2015-12-11 2017-06-23 南车株洲电力机车研究所有限公司 Current transformer phase module loss computing method, device and current transformer loss computing method
CN106887942B (en) * 2015-12-11 2020-01-10 南车株洲电力机车研究所有限公司 Converter phase module loss calculation method and device and converter loss calculation method
CN106712072B (en) * 2017-02-28 2019-04-09 湖南大学 A kind of flexible HVDC transmission system voltage class optimum design method
CN106712072A (en) * 2017-02-28 2017-05-24 湖南大学 Voltage class optimization design method for flexible direct current transmission system
CN107525990A (en) * 2017-09-18 2017-12-29 天津农学院 Multi-level power converter condition monitoring system and power device loss computing method
CN109991872A (en) * 2017-12-29 2019-07-09 上海科梁信息工程股份有限公司 A kind of Modular multilevel converter emulation mode
CN109991872B (en) * 2017-12-29 2022-06-07 上海科梁信息科技股份有限公司 Simulation method of modular multilevel converter
CN108595777A (en) * 2018-04-02 2018-09-28 北京新能源汽车股份有限公司 Switching device power attenuation computational methods, device and equipment in circuit
CN110399647A (en) * 2019-07-01 2019-11-01 南方电网科学研究院有限责任公司 A kind of flexible direct current converter valve loss computing method, device and equipment
CN110399647B (en) * 2019-07-01 2023-02-28 南方电网科学研究院有限责任公司 Flexible direct current converter valve loss calculation method, device and equipment
CN111596160A (en) * 2020-06-16 2020-08-28 全球能源互联网研究院有限公司 MMC converter valve submodule online monitoring method and system

Also Published As

Publication number Publication date
CN102570864B (en) 2014-08-06

Similar Documents

Publication Publication Date Title
CN102570864B (en) Online loss calculation method for modular multilevel converter
CN103715935B (en) A kind of loss based on modular multilevel voltage source converter determines method
CN102158103B (en) Method for calculating DC (Direct Current) transmission loss of modular multilevel converter
CN105811771B (en) A kind of determination method based on the loss of MMC isolated form DC/DC converter switches
CN103324843B (en) A kind of MMC valve loss computing method being applicable to different sub-module types
CN104917406B (en) Common-mode-injection-based nearest level modulation method for MMC
CN103199682A (en) Flexible direct current transmission current converter harmonic wave and loss computing method based on modular multilevel converter (MMC)
CN106787884B (en) The pressure modulator approach and press modulating device that nearest level approaches
CN103259486A (en) Model prediction three-level direct torque control method based on state trajectory extrapolation
CN107888096B (en) Three-phase two-bridge arm three-level hybrid rectifier
CN105186898A (en) Simplified multi-level space vector pulse width modulation method for any-level single-phase cascaded H-bridge type converter and modulation soft core thereof
CN104935064A (en) Matrix V2G quick charge and discharge method
CN104393779A (en) Modular multilevel converter control method based on carrier disposition modulation
CN105122624A (en) Converter cell with reduced power losses, high voltage multilevel converter and associated method
CN105356778A (en) Modularized multi-level inverter and dead-beat control method therefor
CN201403050Y (en) Matrix converter control device based on improved dual-voltage control
CN103605850A (en) MMC (modular multilevel converter) equivalent modeling method with module latching function
CN104615842A (en) Loss calculation method for power devices of full-bridge modular multi-level converter
CN105191091A (en) Voltage source converter
CN101534062B (en) Improved dual voltage control method and device thereof for matrix converters
CN102013825B (en) Loss analysis method for diode clamping type three-level voltage source converter (VSC)
CN102082523A (en) Controlling method of compositely controlled cascaded multilevel inverter and multilevel inverter
Zhang et al. Evaluation of hybrid si/sic three-level active neutral-point-clamped inverters
CN202221967U (en) Three-phase PWM (pulse width modulation) rectifying device based on novel space vector algorithm
CN205430084U (en) Many three inverter's on T type of SHEPWM modulation zero sequence circulation restraint system

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20140806

Termination date: 20141208

EXPY Termination of patent right or utility model