CN105811771B - A kind of determination method based on the loss of MMC isolated form DC/DC converter switches - Google Patents
A kind of determination method based on the loss of MMC isolated form DC/DC converter switches Download PDFInfo
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Abstract
The present invention relates to a kind of determination method based on the loss of MMC isolated form DC/DC converter switches, this method includes：Parameter fitting is carried out to the switching loss characteristics of MMC Neutron module power devices；Utilize the switching loss energy of submodule power device under interpolation calculation working junction temperature；Determine the average switch loss of single power device；Determine the distribution of switching loss type in MMC DC/AC/DC converter ac cycles；Determine the average switch loss of the single-phase upper and lower bridge arm of input terminal MMC transverters；Determine the switching loss of all power devices of MMC DC/AC/DC converters, the method that technical solution provided by the invention uses switching loss equivalent replacement, the analytical expression for effectively solving the isolated form DC/DC converter switches loss based on modularization multi-level converter discloses a kind of numerical computation method of MMC DC/DC converter switches loss.The quantitative analysis for contributing to MMC DC/DC converter switches to be lost is convenient for the realization of systematic parameter Optimized Program and is integrated.
Description
Technical field
The present invention relates to a kind of determination methods of switching loss, and in particular to one kind being based on MMC isolated form DC/DC converters
The determination method of switching loss.
Background technology
The shortage of traditional energy and the worsening of environment, have greatly pushed opening for the clean energy resourcies such as green regenerative energy sources
Hair and utilization.But it is limited to the digestion capability of local power system, most of regenerative resource is not utilized effectively, or even goes out
Existing " abandoning wind ", " abandoning light " phenomenon are badly in need of carrying out extensive wind, photoelectromotive force, high efficiency, safety send research outside.Based on customary DC
And the DC grid technology of flexible direct current is to solve one of the effective technology means of this present situation.And DC grid is hindered to be formed
One of principal element is the missing of high-voltage large-capacity DC/DC converters so that the different DC power transmission line of each voltage class
It cannot be connected directly and form large-scale DC transmission system.Currently, during the research of DC/DC converter technologies is concentrated mainly on
Small-power mesolow voltage class, with the continuous construction of DC line and being increasingly urgent to for DC grid demand, high pressure is big
Capacity DC/DC converter technologies are urgently to be resolved hurrily.
Isolated form high pressure based on modularization multi-level converter (Modular Multilevel Converter, MMC)
Large capacity DC/DC converters are since its plurality of advantages becomes research hotspot, and the topology is by two MMC transverters through transformation is isolated
Device is connected to form, such as Fig. 1 depicted.The MMC converter bridge arms of input and output side are all made of the concatenated mode of submodule, such as Fig. 2
It is shown, a large amount of power devices directly faced driving consistency of series connection and the hardness such as pressure under high pressure occasion has been effectively relieved and has wanted
It asks.The DC/DC convertor controls are flexible, and the two-way flow of energy can be realized in the change without hardware circuit and control strategy.
Input and output side carries out electrical isolation by isolating transformer, effectively prevent the sprawling of the system failure.Isolating transformer can work
In 500Hz to 1kHz, with the rising of working frequency, the passive devices volume such as capacitance, inductance reduces in converter, but IGBT etc.
The loss of power device rises, thus in system loss and volume compromise optimization design MMC-DC/AC/DC converters loss
It is essential to further investigate.
The loss of power device is made of on-state loss and switching loss, and the appraisal procedure of loss can be divided into experiment inspection
Survey, physical modeling and mathematical analysis three classes.Method for testing and detecting is only applicable to low pressure small-power occasion, and the method for physical modeling is wanted
Based on a large amount of device Fabrication parameter, it is difficult to obtain.MMC transverters Loss Research is all made of mathematical methods at present, according to system
Some component characteristic parameters of manufacturer's offer, the characterisitic function of fitting power device are provided, and then carried out average based on power device
The loss evaluation of electric current and effective current or online loss calculation, can not be simply obtained MMC switching losses and voltage modulated degree,
The quantitative relationship of bridge arm submodule quantity, transformer working frequency and active transimission power etc. is not easy to carry out switching loss
Quantitative analysis and Optimized System Design.
Invention content
To solve above-mentioned deficiency of the prior art, the object of the present invention is to provide based on MMC isolated form DC/DC converters
The determination method of switching loss, the method that the present invention uses switching loss equivalent replacement, effectively solves how electric based on modularization
The analytical expression of the isolated form DC/DC converter switches loss of flat transverter, discloses a kind of MMC-DC/DC converter switches
The numerical computation method of loss.The quantitative analysis for contributing to MMC-DC/DC converter switches to be lost sets convenient for systematic parameter optimization
The realization for sequence of having the records of distance by the log with it is integrated.
The purpose of the present invention is what is realized using following technical proposals：
The present invention provides a kind of determination method being lost based on MMC isolated form DC/DC converter switches, the isolated form
DC/DC converters include isolating transformer and its MMC of both ends connection；Two MMC are accessed in straight-flow system；How electric modularization is
Flat transverter MMC is made of three-phase, is made of identical upper and lower two bridge arm of concatenated structure per phase；The midpoint of upper and lower two bridge arm
Locate the exchange end of link block multilevel converter；
Each bridge arm includes 1 reactor and the identical submodule of N number of structure in upper and lower two bridge arm；Each bridge arm
Sub-module cascade after one end end connection is exchanged by reactor and modularization multi-level converter；The submodule of each bridge arm
The other end is connect with cascade submodule one end of another two-phase bridge arm after cascade, forms modular multilevel voltage source converter
The positive and negative anodes busbar of DC terminal；The submodule is made of half-bridge capacitor branches connected in parallel, and the half-bridge is by upper bridge arm
It is constituted with lower bridge arm, the upper bridge arm and lower bridge arm are by insulated gate bipolar transistor IGBT and afterflow two connected in parallel
Pole pipe FWD compositions；
It is improved in that the method includes following step：
Step 1：Parameter fitting is carried out to the switching loss characteristics of MMC Neutron module power devices；
Step 2：Utilize the switching loss energy of submodule power device under interpolation calculation working junction temperature；
Step 3：Determine the average switch loss of single power device；
Step 4：Determine the distribution of switching loss type in MMC-DC/AC/DC converter ac cycles；
Step 5：Determine the average switch loss of the single-phase upper and lower bridge arm of input terminal MMC transverters；
Step 6：Determine the switching loss of all power devices of MMC-DC/AC/DC converters.
Further, in the step 1, for submodule power device switching loss characteristics in the block, using as follows
The quadratic polynomial of formula (1) is fitted and extracts switching loss characterisitic parameter, seeks switching next time in given on state current dynamic
The energy loss of work：
Wherein：Esw_kIndicate that junction temperature is the opening of IGBT at k DEG C, turns off or the reverse recovery loss (E of diodeon, Eoff
Or Erec)；idevThe electric current of power device is flowed through in expression, is collector current i for IGBTC, it is forward current for diode
iF；asw_k、bsw_k、csw_kIt is by the determining parameter of 25 DEG C and 125 DEG C of energy consumption curve fittings, to IGBT turn-on consumption songs respectively
Line is fitted to obtain aon_k、bon_k、con_k, IGBT turn-off power loss curves are fitted to obtain aoff_k、boff_k、coff_k, right
Diode reverse recovery losses curve is fitted to obtain arec_k、brec_k、crec_k。
Further, in the step 2, knot is fitted according to the energy consumption curve of power device in 25 DEG C and 125 DEG C of submodules
Fruit utilizes interpolation calculation working junction temperature TjAt DEG C in submodule power device switching loss energy, as shown in following formula (2)；
It brings formula (1) into formula (2) and carries out abbreviation, obtain formula (3)-(6)：
Wherein：EswTjIndicate that junction temperature is the switching loss energy of power device in submodule at Tj DEG C；aswTj、bswTj、cswTj
Respectively junction temperature is the parameter in submodule in the switching loss expression formula of power device at Tj DEG C；Esw_125Indicate that junction temperature is 125
The opening of IGBT at DEG C turns off or the reverse recovery loss of diode；Esw_25Indicate that junction temperature is that IGBT is opened, turned off at 25 DEG C
Or the reverse recovery loss of diode；asw_125、bsw_125、csw_125It indicates through the determining parameter of 125 DEG C of energy consumption curve fittings,
IGBT turn-on consumption curves are fitted to obtain aon_125、bon_125、con_125, IGBT turn-off power loss curves are fitted
To aoff_125、boff_125、coff_125, diode reverse recovery losses curve is fitted to obtain arec_125、brec_125、
crec_125；asw_25、bsw_25、csw_25Indicate through the determining parameters of 25 DEG C of energy consumption curves fitting, to IGBT turn-on consumptions curve into
Row fitting obtains aon_25、bpn_25、con_25, IGBT turn-off power loss curves are fitted to obtain aoff_25、boff_25、coff_25, right
Diode reverse recovery losses curve is fitted to obtain arec_25、brec_25、crec_25。
Further, it in the step 3, will be opened accordingly according to the number of power device in submodule turned on and off
It closes loss of energy to add up, it is average that the time is carried out to it, you can obtain the average switch loss of each section；IGBT in submodule
The turn-on consumption P of T1T1onWith turn-off power loss PT1offAnd P is lost in the reverse blocking of diode D1D1recCalculation formula it is as follows：
Wherein：udcFor submodule capacitor voltage；vcerefFor producer provide calculating the reference voltage base of switching loss
Quasi- value；EonTjuIt is IGBT T1 in working junction temperature TjThe u times loss of energy for opening generation at DEG C；EoffTjuIt is IGBT T1 in work
Make junction temperature TjThe loss of energy that the u times shutdown generates at DEG C；ErecTjuIt is D1 in working junction temperature TjThe u times reverse blocking generates at DEG C
Loss of energy；TsFor the MMC-DC/AC/DC converter exchange side work periods；W is TsThe number switched in cycle time.
Further, the step 4 includes the following steps：
Step 4.1：Determine that single half-bridge submodule generates the condition of different switching loss types：
For the half-bridge sub-modular structure in Fig. 2, the switching change over order of bridge arm current direction and submodule influences
Switching loss type；When bridge arm current direction is that just, submodule has input state to become cutting off generation IGBT T2 in state procedure
Turn-on consumption and diode D1 reverse blocking loss；
Step 4.2：Determine switching loss type in the upper and lower bridge arm of MMC transverters：
According to MMC-DC/AC/DC converter operation mechanisms, the expression formula such as formula (10)-of upper and lower bridge arm voltage and electric current
(13) shown in；When bridge arm output voltage rises, part bridge arm submodule is converted to input state by excision state, according to bridge arm
Current direction generates corresponding switching loss；When bridge arm output voltage declines, part bridge arm submodule is converted by excision state
To put into state：
Wherein：UupFor upper bridge arm output voltage；UdownFor lower bridge arm output voltage；UdFor DC voltage；UmFor MMC-
DC/AC/DC converter exchange side output voltage peak values；θ is the phase angle of alternating voltage；M is voltage modulated degree；iupFor upper bridge arm electricity
Stream, IdFor MMC Converter DC-side electric currents；ImFor ac-side current peak value；For the phase angle difference of exchange side voltage and electric current；K is
Current-modulation degree.
Further, the step 5 includes the following steps：
Step 5.1：Switching loss is subjected to equivalent replacement so that the switchtype that upper and lower bridge arm is generated in synchronization
Unanimously；
Through step 4.2 analysis shows the switching loss type that generates of the upper and lower bridge arm of synchronization is not necessarily identical, cause be
Switching loss of uniting calculates solving complexity.Under the premise of ensureing that system master switch loss is constant, by the equivalent replacement of switching loss,
So that the switchtype that upper and lower bridge arm is generated in synchronization is consistent, operation is greatlied simplify.
Step 5.2：Calculate the average switch loss of the single-phase upper and lower bridge arm of input terminal MMC transverters：
The switching loss in the primitive period is solved, as shown in following formula (14)：
aonrecTj=aonTj+arecTj(15)；
bonrecTj=bonTj+brecTj(16)；
conrecTj=conTj+crecTj(17)；
Wherein：Psw_1For the switching loss of power device in the single-phase upper and lower bridge arm of MMC transverters；N1 expressions [0, pi/2) in
The number of bridge arm submodule switching conversion；N2 indicate [pi/2, π) conversion of interior bridge arm submodule switching number；N3 expressions [π, 3 π/
2) number that bridge arm submodule switching is converted in；N4 indicate [3 pi/2s, 2 π) conversion of interior bridge arm submodule switching number；iuphWith
idownhFor [0, pi/2) the h times switching conversion of interior bridge arm when corresponding upper bridge arm current and lower bridge arm electric current；iupiAnd idowniFor
[pi/2, π) conversion of interior bridge arm ith switching when corresponding upper bridge arm current and lower bridge arm electric current；iupjAnd idownjFor [π, 3 pi/2s)
Corresponding upper bridge arm current and lower bridge arm electric current when interior bridge arm jth time switching conversion；iupkAnd idownkFor [3 pi/2s, 2 π) interior bridge arm
Corresponding upper bridge arm current and lower bridge arm electric current when kth time switching conversion；UcapFor submodule capacitance rated voltage；aonrecTj、
bonrecTj、conrecTjIGBT turn-on consumptions curve and the reversed cut-off loss curve fitting parameter of diode under Tj junction temperatures are indicated respectively
Sum；Ts is the MMC-DC/AC/DC converter exchange side work periods；
Step 5.3：It is simplified to bring upper and lower bridge arm current expression formula (12) and (13) into formula (14)：
Step 5.4：Simplify average switch using the corresponding quantitative relationship of modulation strategy to be lost：
Assuming that upper and lower bridge arm Neutron module number is n in half-bridge submodule, modulation strategy is approached by nearest level and is obtained, upper,
Lower bridge arm reference voltage generates corresponding modulated signal compared with threshold voltage value；Threshold voltage is respectively：0、Total n+1, θ1hIndicate bridge arm voltage modulating wave (0, pi/2] in the h time and threshold voltage intersection pair
The angle answered；θ2iIndicate bridge arm voltage modulating wave (pi/2, π] interior ith angle corresponding with threshold voltage intersection；θ3jTable
Show bridge arm voltage modulating wave [π, 3 pi/2s) interior jth time angle corresponding with threshold voltage intersection；θ4kIndicate bridge arm voltage tune
Wave processed [3 pi/2s, 2 π) interior kth time angle corresponding with threshold voltage intersection；Analytical expression (19)-(22) are obtained, and will
Formula (19)-(22) bring formula (18) into and obtain relational expression (24), sum to obtain formula (25) through ordered series of numbers：
aonoffrecTj=aonTj+aoffTj+arecTj(26)；
bonoffrecTj=bonTj+boffTj+brecTj(27)；
conoffecTj=conTj+coffTj+crecTj(28)；
Wherein：[] is rounding algorithm, and Q indicates bracket function, influence of the reaction different voltages modulation degree to loss；H is indicated
(0, pi/2] in the number that intersects with threshold voltage of bridge arm voltage modulating wave；aonoffrecTj、bonoffrecTj、conoffrecTjRespectively
Indicate the sum of IGBT turn-on consumptions, turn-off power loss and diode reversed cut-off loss curve fitting parameter when junction temperature is Tj.
Further, the step 6 includes the following steps：
Step 6.1：Calculate the switching loss of input terminal MMC transverter three phase power devices；
MMC transverter symmetrical operations solve the switching loss of input terminal MMC transverter three phase power devices according to step 5,
As shown in following formula (29)：
Psw_3=3*Psw_1(29)；
Step 6.2：Calculate the switching loss of output end MMC transverter three phase power devices：As shown in following formula (30)：
P′sw_3=3*P 'sw_1(30)；
Step 6.2：Calculate the switching loss of all power devices in MMC-DC/AC/DC converters
Input terminal in step 6.1 and 6.2 is added with the switching loss of output end MMC in MMC-DC/AC/DC converters
The switching loss of all power devices, as shown in following formula (31)：
Ptotal=Psw_3+P′sw_3(31)；
Wherein：PtotalFor the switching loss of all power devices in MMC-DC/AC/DC converters.
Compared with the immediate prior art, the excellent effect that technical solution provided by the invention has is：
1, it is each to be based on each power device for MMC-DC/AC/DC converter switches loss computing method provided by the present invention
Moment is turned on and off, is pushed over using the method for loss equivalent replacement, explicit physical meaning；
2, converter can be calculated in MMC-DC/AC/DC converter switches loss computing method provided by the present invention
In each power device switching loss analytical expression, including IGBT turns on and off on-state loss and diode reverse blocking
Loss, can realize the comparative analysis between each loss；
3, MMC-DC/AC/DC converter switches loss calculation expression formula provided by the present invention can obtain converter and open
Loss and voltage modulated degree, the quantitative relationship of bridge arm submodule quantity, transformer working frequency, work(transimission power are closed, convenient for being
Parameters Optimal Design of uniting is studied with braking measure is lost.
Description of the drawings
Fig. 1 is the isolated form DC/DC converter topology figures based on MMC；
Fig. 2 is modularization multi-level converter circuit topology figure provided by the invention；
Fig. 3 is the performance diagram that IGBT provided by the invention turns on and off loss；
Fig. 4 is the performance diagram of diode reverse blocking provided by the invention；
Fig. 5 is MMC converter bridge arms current waveform figure provided by the invention, wherein：Dotted line is upper bridge arm current oscillogram,
Solid line is lower bridge arm current waveform figure；
Fig. 6 is MMC converter bridge arms voltage oscillogram provided by the invention；Wherein：Dotted line is upper bridge arm voltage oscillogram,
Solid line is lower bridge arm voltage oscillogram；
Fig. 7 is MMC transverters loss distribution map after equivalent replacement provided by the invention；Wherein：Dotted line is lost for upper bridge arm
Figure, solid line are lower bridge arm loss figure；
Fig. 8 is that nearest level provided by the invention approaches the corresponding quantitative relationship figure of modulation strategy；
Fig. 9 is the flow chart of the determination method provided by the invention being lost based on MMC isolated form DC/DC converter switches.
Specific implementation mode
The specific implementation mode of the present invention is described in further detail below in conjunction with the accompanying drawings.
The present invention provide it is a kind of based on modularization multi-level converter MMC isolated form DC/DC converter switches loss
Computational methods, wherein：Isolated form DC/DC converters include isolating transformer and its MMC of both ends connection；Two MMC are accessed
In straight-flow system；Modularization multi-level converter MMC is made of three-phase, per mutually by identical upper and lower two bridge arm of concatenated structure
It constitutes；The exchange end of the midpoint link block multilevel converter of upper and lower two bridge arm；
Each bridge arm includes 1 reactor and the identical submodule of N number of structure in upper and lower two bridge arm；Each bridge arm
Sub-module cascade after one end end connection is exchanged by reactor and modularization multi-level converter；The submodule of each bridge arm
The other end is connect with cascade submodule one end of another two-phase bridge arm after cascade, forms modular multilevel voltage source converter
The positive and negative anodes busbar of DC terminal；The submodule is made of half-bridge capacitor branches connected in parallel, and the half-bridge is by upper bridge arm
It is constituted with lower bridge arm, the upper bridge arm and lower bridge arm are by insulated gate bipolar transistor IGBT and afterflow two connected in parallel
Pole pipe FWD compositions；The flow chart of computational methods is as shown in figure 9, include the following steps：
Step 1：Parameter fitting is carried out according to the switching loss characteristics of power device：
For power device (IGBT and diode) switching loss characteristics that producer provides, using the two of such as formula (1)
Order polynomial is fitted and extracts switching loss characterisitic parameter, to seek the energy in given on state current switch motion next time
Amount loss.Switching loss characteristics can refer to Fig. 3 and Fig. 4.
Wherein：Esw_kIndicate that junction temperature is the opening of IGBT at k DEG C, turns off or the reverse recovery loss energy (E of diodeon,
EoffOr Erec)；idevThe electric current of power device is flowed through in expression, is collector current i for IGBTC, it is positive electricity for diode
Flow iF)。asw_k、bsw_k、csw_kIt is by the determining parameter of 25 DEG C and 125 DEG C of energy consumption curve fittings, to IGBT turn-on consumption curves
It is fitted to obtain aon_25、bon_25、con_25, IGBT turn-off power loss curves are fitted to obtain aoff_25、boff_25、coff_25,
Diode reverse recovery losses curve is fitted to obtain arec_25、brec_25、crec_25。
Step 2：Utilize interpolation calculation working junction temperature lower switch loss of energy
According to 25 DEG C and 125 DEG C of energy consumption curve fitting results, it is lost using Tj DEG C of lower switch of interpolation calculation working junction temperature
Energy, as shown in formula (2).It brings formula (1) into formula (2) and carries out abbreviation, obtain formula (3)-(6).
Wherein：EswTjIndicate that junction temperature is the switching loss energy of power device at Tj DEG C；aswTj、bswTj、cswTjIt is for junction temperature
Parameter at Tj DEG C in the switching loss expression formula of power device；Esw_125Indicate that junction temperature is that IGBT is opened, turned off at 125 DEG C
Or the reverse recovery loss of diode；Esw_25Indicate that junction temperature is the opening of IGBT at 25 DEG C, turns off or the Reverse recovery of diode
Loss；asw_125、bsw_125、csw_125It indicates by the determining parameter of 125 DEG C of energy consumption curve fittings, to IGBT turn-on consumption curves
It is fitted to obtain aon_125、bon_125、con_125, IGBT turn-off power loss curves are fitted to obtain aoff_125、boff_125、
coff_125, diode reverse recovery losses curve is fitted to obtain arec_125、brec_125、crec_125；asw_25、bsw_25、
csw_25It indicates, by the determining parameter of 25 DEG C of energy consumption curve fittings, IGBT turn-on consumption curves to be fitted to obtain aon_25、
bon_25、con_25, IGBT turn-off power loss curves are fitted to obtain aoff_25、boff_25、coff_25, to diode reverse recovery
Damage curve is fitted to obtain arec_25、brec_25、crec_25。
Step 3：Calculate the average switch loss of single power device：
Corresponding switching loss energy is added up according to the number of switch motion, it is average then to carry out the time to it,
It can be obtained the average switch loss of each section.For example, the turn-on consumption of T1 and turn-off power loss in submodule as shown in Figure 2,
The calculation formula of the reverse blocking loss of D1 is as follows：
Wherein：udcFor submodule capacitor voltage；vcerefFor producer provide calculating the reference voltage base of switching loss
Quasi- value；EonTjuIt is T1 in working junction temperature TjThe u times loss of energy for opening generation at DEG C；EoffTjuIt is T1 in working junction temperature Tj℃
The loss of energy that lower the u times shutdown generates；ErecTjuIt is D1 in working junction temperature TjThe loss energy that the u times reverse blocking generates at DEG C
Amount；TsFor the MMC-DC/AC/DC converter exchange side work periods；W is TsThe number switched in cycle time.
Step 4：Determine the distribution situation of switching loss type in MMC-DC/AC/DC converter ac cycles
Step 4.1：Determine that single half-bridge submodule generates the condition of different switching loss types：
Half-bridge sub-modular structure is as shown in Fig. 2, the switching change over order of bridge arm current direction and submodule influences to open
Close loss situation.For example, when bridge arm current direction is that just, submodule has input state to become will produce T2 in excision state procedure
Turn-on consumption and D1 reverse blocking loss.It is as shown in table 1 to enumerate all situations.
The switching loss situation of 1 single half-bridge submodule of table
Step 4.2：Determine the switching loss type of the upper and lower bridge arm of MMC transverters：
According to MMC-DC/AC/DC converter operation mechanisms, the expression formula such as formula (10)-of upper and lower bridge arm voltage and electric current
(13) shown in, it is contemplated that the reactive power very little transmitted in DC/AC/DC converters, the power factor of input/output terminal MMC
To reach very high, i.e.,Figures 5 and 6 are the oscillogram of upper and lower bridge arm current and voltage.When bridge arm output voltage rises,
Part bridge arm submodule is converted to input state by excision state, and corresponding switching loss is generated according to bridge arm current direction；When
When bridge arm output voltage declines, part bridge arm submodule is converted to input state by excision state.It, can in conjunction with table 1, Fig. 5 and Fig. 6
The distribution situation of the switching loss of upper and lower bridge arm is obtained, as shown in table 2 and Fig. 6.Due to T1 and T2, D1 with D2 models are consistent, institute
The switching loss size of generation is only related with bridge arm current, does not subdivide and is specifically damaged by the switch which switching device generates herein
Consumption.
2 upper and lower bridge arm switching loss distribution situation of table
Wherein：UupFor upper bridge arm output voltage；UdownFor lower bridge arm output voltage；UdFor DC voltage；UmFor MMC-
DC/AC/DC converter exchange side output voltage peak values；θ is the phase angle of alternating voltage；M is voltage modulated degree；iupFor upper bridge arm electricity
Stream；idownFor lower bridge arm electric current；IdFor MMC Converter DC-side electric currents；ImFor ac-side current peak value；For exchange side voltage
With the phase angle difference of electric current；As shown in Fig. 5 dotted lines, wherein θ1、θ2For the zero crossing of upper bridge arm current；idownFor lower bridge arm electric current, such as
Fig. 5 is shown in solid, wherein θ '1、θ′2For the zero crossing of lower bridge arm electric current；
Step 5：Calculate the average switch loss of the single-phase upper and lower bridge arm of input terminal MMC transverters
Step 5.1：Switching loss is subjected to equivalent replacement
By taking A phases in input terminal MMC transverters as an example.Curve A in Fig. 61A2Interior lower bridge arm generates turn-on consumption and reverse blocking
Loss, curve A5A6Interior lower bridge arm generates turn-off power loss.Due to curve A1A2And A5A6The size of corresponding bridge arm current is identical and bridge
Arm output voltage is identical, in the case where ensureing that switching loss summation is constant in the primitive period, it is believed that curve A1A2Under correspondence
Bridge arm A5A6The turn-off power loss generated in period, curve A5A6Corresponding lower bridge arm A1A2The turn-on consumption that generates in period and anti-
It is lost to blocking.Similarly, by curve A2A3And A4A5Interior loss is into line replacement, by curve B1A2And A5B6Interior loss displacement, will
Curve A2B3And B4A5Interior loss is into line replacement.Loss distribution after equivalent replacement is as shown in Figure 7.
Step 5.2：Calculate the average switch loss of the single-phase upper and lower bridge arm of input terminal MMC transverters
The switching loss in the primitive period can be solved according to Fig. 7, as shown in formula (14).
aonrecTj=aonTj+arecTj(15)；
bonrecTj=bonTj+brecTj(16)；
conrecTj=conTj+crecTj(17)；
Wherein：Psw_1For the switching loss of power device in the single-phase upper and lower bridge arm of MMC transverters；N1 expressions [0, pi/2) in
The number of bridge arm submodule switching conversion；N2 indicate [pi/2, π) conversion of interior bridge arm submodule switching number；N3 expressions [π, 3 π/
2) number that bridge arm submodule switching is converted in；N4 indicate [3 pi/2s, 2 π) conversion of interior bridge arm submodule switching number；iuphWith
idownhFor [0, pi/2) the h times switching conversion of interior bridge arm when corresponding upper bridge arm current and lower bridge arm electric current；iupiAnd idowniFor
[pi/2, π) conversion of interior bridge arm ith switching when corresponding upper bridge arm current and lower bridge arm electric current；iupjAnd idownjFor [π, 3 pi/2s)
Corresponding upper bridge arm current and lower bridge arm electric current when interior bridge arm jth time switching conversion；iupkAnd idownkFor [3 pi/2s, 2 π) interior bridge arm
Corresponding upper bridge arm current and lower bridge arm electric current when kth time switching conversion；UcapFor submodule capacitance rated voltage.
Step 5.3：Bring upper and lower bridge arm current expression formula into abbreviation
Upper and lower bridge arm current expression formula (12) and (13) are brought into simplified：
Step 5.4：Simplify the analytical expression of average switch loss using the corresponding quantitative relationship of modulation strategy
Assuming that upper and lower bridge arm Neutron module number is more, and number is n, approaches modulation strategy by nearest level and obtains, above and below
Bridge arm reference voltage generates corresponding modulated signal compared with a series of threshold voltage values.Threshold voltage is respectively：0、Total n+1.Each θ1h、θ2i、θ3j、θ4kIt is corresponding with threshold voltage intersection for bridge arm voltage modulating wave
Angle, it is (19)-(22) that analytical expression, which can be obtained, and signal is as shown in Figure 8.And it brings formula (19)-(22) into formula (18) and must close
It is formula (24), sums to obtain formula (25) through ordered series of numbers.
aonoffrecTj=aonTj+aoffTj+arecTj(26)；
bonoffrecTj=bonTj+boffTj+brecTj(27)；
conoffrecTj=conTj+coffTj+crecTj(28)；
Wherein：[] is rounding algorithm, and Q indicates bracket function, influence of the reaction different voltages modulation degree to loss；H is indicated
(0, pi/2] in the number that intersects with threshold voltage of bridge arm voltage modulating wave；aonoffrecTj、bonoffrecTj、conoffrecTjRespectively
Indicate the sum of IGBT turn-on consumptions, turn-off power loss and diode reversed cut-off loss curve fitting parameter when junction temperature is Tj.
Step 6：Calculate the switching loss of all power devices of MMC-DC/AC/DC converters
Step 6.1：Calculate the switching loss of input terminal MMC transverter three phase power devices
Due to MMC transverter symmetrical operations, can be solved according to step 5 to input terminal MMC transverter three phase power devices
Switching loss, as shown in formula (29).
Psw_3=3*Psw_1(29)；
Step 6.2：Calculate the switching loss of output end MMC transverter three phase power devices
Using step 5 and 6.1 same methods, the switch damage of output end MMC transverter three phase power devices can be sought
Consumption, as shown in formula (30).
P′sw_3=3*P 'sw_1(30)；
Step 6.2：Calculate the switching loss of all power devices in MMC-DC/AC/DC converters
Input terminal in step 6.1 and 6.2 is added with the switching loss of output end MMC in MMC-DC/AC/DC converters
The switching loss of all power devices, as shown in formula (31).
Ptotal=Psw_3+P′sw_3(31)；
Wherein：PtotalFor the switching loss of all power devices in MMC-DC/AC/DC converters.
Finally it should be noted that：The above embodiments are merely illustrative of the technical scheme of the present invention and are not intended to be limiting thereof, to the greatest extent
Invention is explained in detail with reference to above-described embodiment for pipe, and those of ordinary skill in the art still can be to this hair
Bright specific implementation mode is modified or replaced equivalently, these without departing from spirit and scope of the invention any modification or
Equivalent replacement, within the claims for applying for the pending present invention.
Claims (6)
1. a kind of determination method based on the loss of MMC isolated form DC/DC converter switches, the isolated form DC/DC converter packets
Include isolating transformer and its MMC of both ends connection；Two MMC are accessed in straight-flow system；Modularization multi-level converter MMC by
Three-phase is constituted, and is made of identical upper and lower two bridge arm of concatenated structure per phase；The midpoint link block of upper and lower two bridge arm
The exchange end of multilevel converter；
Each bridge arm includes 1 reactor and the identical submodule of N number of structure in upper and lower two bridge arm；The son of each bridge arm
One end is connected by reactor with the end that exchanges of modularization multi-level converter after module-cascade；The sub-module cascade of each bridge arm
The other end is connect with cascade submodule one end of another two-phase bridge arm afterwards, forms modular multilevel voltage source converter direct current
The positive and negative anodes busbar at end；The submodule is made of half-bridge capacitor branches connected in parallel, and the half-bridge is by upper bridge arm under
Bridge arm is constituted, and the upper bridge arm and lower bridge arm are by insulated gate bipolar transistor IGBT and fly-wheel diode connected in parallel
FWD is formed；
It is characterized in that, the method includes following step：
Step 1：Parameter fitting is carried out to the switching loss characteristics of MMC Neutron module power devices；
Step 2：Utilize the switching loss energy of submodule power device under interpolation calculation working junction temperature；
Step 3：Determine the average switch loss of single power device；
Step 4：Determine the distribution of switching loss type in MMC-DC/AC/DC converter ac cycles；
Step 5：Determine the average switch loss of the single-phase upper and lower bridge arm of input terminal MMC transverters；
Step 6：Determine the switching loss of all power devices of MMC-DC/AC/DC converters；
The step 4 includes the following steps：
Step 4.1：Determine that single half-bridge submodule generates the condition of different switching loss types：
For half-bridge sub-modular structure, the switching change over order of bridge arm current direction and submodule influences switching loss class
Type；When bridge arm current direction is that just, submodule has input state to become cutting off the turn-on consumption for generating IGBT T2 in state procedure
It is lost with the reverse blocking of diode D1；
Step 4.2：Determine switching loss type in the upper and lower bridge arm of MMC transverters：
According to MMC-DC/AC/DC converter operation mechanisms, expression formula such as formula (10)-(13) institute of upper and lower bridge arm voltage and electric current
Show；When bridge arm output voltage rises, part bridge arm submodule is converted to input state by excision state, according to bridge arm current side
To the corresponding switching loss of generation；When bridge arm output voltage declines, part bridge arm submodule is converted to input by excision state
State：
Wherein：UupFor upper bridge arm output voltage；UdownFor lower bridge arm output voltage；UdFor DC voltage；UmFor MMC-DC/AC/
DC converter exchange side output voltage peak values；θ is the phase angle of alternating voltage；M is voltage modulated degree；iupFor upper bridge arm current, Id
For MMC Converter DC-side electric currents；ImFor ac-side current peak value；For the phase angle difference of exchange side voltage and electric current；K is electric current
Modulation degree.
2. determining method as described in claim 1, which is characterized in that in the step 1, for submodule power device in the block
Switching loss characteristics are fitted and extract switching loss characterisitic parameter using the quadratic polynomial of such as following formula (1), seek
The energy loss of given on state current switch motion next time：
Wherein：Esw_kIndicate that junction temperature is the opening of IGBT at k DEG C, turns off or the reverse recovery loss (E of diodeon, EoffOr
Erec)；idevThe electric current of power device is flowed through in expression, is collector current i for IGBTC, it is forward current i for diodeF；
asw_k、bsw_k、csw_kBe respectively by the determining parameter of 25 DEG C and the fitting of 125 DEG C of energy consumption curves, to IGBT turn-on consumptions curve into
Row fitting obtains aon_k、bon_k、con_k, IGBT turn-off power loss curves are fitted to obtain aoff_k、boff_k、coff_k, to two poles
Pipe reverse recovery loss curve is fitted to obtain arec_k、brec_k、crec_k。
3. determining method as claimed in claim 2, which is characterized in that in the step 2, according to 25 DEG C and 125 DEG C of submodules
The energy consumption curve fitting result of middle power device utilizes interpolation calculation working junction temperature TjPower device is opened in submodule at DEG C
Loss of energy is closed, as shown in following formula (2)；It brings formula (1) into formula (2) and carries out abbreviation, obtain formula (3)-(6)：
Wherein：EswTjIndicate that junction temperature is the switching loss energy of power device in submodule at Tj DEG C；aswTj、bswTj、cswTjRespectively
Parameter at being Tj DEG C for junction temperature in submodule in the switching loss expression formula of power device；Esw_125Indicate that junction temperature is at 125 DEG C
The opening of IGBT turns off or the reverse recovery loss of diode；Esw_25Indicate that junction temperature is the opening of IGBT at 25 DEG C, turns off or two
The reverse recovery loss of pole pipe；asw_125、bsw_125、csw_125It indicates through the determining parameter of 125 DEG C of energy consumption curve fittings, it is right
IGBT turn-on consumption curves are fitted to obtain aon_125、bon_125、con_125, IGBT turn-off power loss curves are fitted to obtain
aoff_125、boff_125、coff_125, diode reverse recovery losses curve is fitted to obtain arec_125、brec_125、crec_125；
asw_25、bsw_25、csw_25It indicates, by the determining parameter of 25 DEG C of energy consumption curve fittings, to be fitted IGBT turn-on consumption curves
Obtain aon_25、bon_25、con_25, IGBT turn-off power loss curves are fitted to obtain aoff_25、boff_25、coff_25, to diode
Reverse recovery loss curve is fitted to obtain brec_25、brec_25、crec_25。
4. determining method as described in claim 1, which is characterized in that in the step 3, according to power device in submodule
The number turned on and off adds up corresponding switching loss energy, and it is average that the time is carried out to it, you can obtains each section
Average switch loss；The turn-on consumption P of IGBT T1 in submoduleT1onWith turn-off power loss PT1offAnd diode D1's is reversed
Block loss PD1recCalculation formula it is as follows：
Wherein：udcFor submodule capacitor voltage；vcerefFor producer provide calculating the reference voltage base value of switching loss；
EonTjuIt is IGBT T1 in working junction temperature TjThe u times loss of energy for opening generation at DEG C；EoffTjuIt is IGBT T1 in working junction temperature
TjThe loss of energy that the u times shutdown generates at DEG C；ErecTjuIt is D1 in working junction temperature TjThe loss that the u times reverse blocking generates at DEG C
Energy；TsFor the MMC-DC/AC/DC converter exchange side work periods；W is TsThe number switched in cycle time.
5. determining method as described in claim 1, which is characterized in that the step 5 includes the following steps：
Step 5.1：Switching loss is subjected to equivalent replacement so that the switchtype that upper and lower bridge arm is generated in synchronization is consistent；
Step 5.2：Calculate the average switch loss of the single-phase upper and lower bridge arm of input terminal MMC transverters：
The switching loss in the primitive period is solved, as shown in following formula (14)：
aonrecTj=aonTj+arecTj(15)；
bonrecTj=bonTj+brecTj(16)；
conrecTj=conTj+crecTj(17)；
Wherein：Psw_1For the switching loss of power device in the single-phase upper and lower bridge arm of MMC transverters；N1 indicate [0, pi/2) interior bridge arm
The number of submodule switching conversion；N2 indicate [pi/2, π) conversion of interior bridge arm submodule switching number；N3 expressions [π, 3 pi/2s) in
The number of bridge arm submodule switching conversion；N4 indicate [3 pi/2s, 2 π) conversion of interior bridge arm submodule switching number；iuphAnd idownh
For [0, pi/2) the h times switching conversion of interior bridge arm when corresponding upper bridge arm current and lower bridge arm electric current；iupiAnd idowniFor [pi/2, π)
Corresponding upper bridge arm current and lower bridge arm electric current when interior bridge arm ith switching conversion；iupjAnd idownjFor [π, 3 pi/2s) interior bridge arm
Corresponding upper bridge arm current and lower bridge arm electric current when j switching conversion；iupkAnd idownkFor [3 pi/2s, 2 π) interior bridge arm kth time switching
Corresponding upper bridge arm current and lower bridge arm electric current when conversion；UcapFor submodule capacitance rated voltage；aonrecTj、bonrecTj、
conrecTjThe sum of IGBT turn-on consumptions curve and the reversed cut-off loss curve fitting parameter of diode under Tj junction temperatures is indicated respectively；Ts
For the MMC-DC/AC/DC converter exchange side work periods；
Step 5.3：It is simplified to bring upper and lower bridge arm current expression formula (12) and (13) into formula (14)：
Step 5.4：Simplify average switch using the corresponding quantitative relationship of modulation strategy to be lost：
Assuming that upper and lower bridge arm Neutron module number is n in half-bridge submodule, modulation strategy is approached by nearest level and is obtained, upper and lower bridge
Arm reference voltage generates corresponding modulated signal compared with threshold voltage value；Threshold voltage is respectively：0、
Total n+1, θ1hIndicate bridge arm voltage modulating wave (0, pi/2] in the h times angle corresponding with threshold voltage intersection；θ2iTable
Show bridge arm voltage modulating wave (pi/2, π] interior ith angle corresponding with threshold voltage intersection；θ3jIndicate bridge arm voltage tune
Wave processed [π, 3 pi/2s) interior jth time angle corresponding with threshold voltage intersection；θ4kIndicate bridge arm voltage modulating wave [3
Pi/2,2 π) interior kth time angle corresponding with threshold voltage intersection；Obtain analytical expression (19)-(22), and by formula (19)-
(22) it brings formula (18) into and obtains relational expression (24), sum to obtain formula (25) through ordered series of numbers：
aonoffrecTj=aonTj+aoffTj+arecTj(26)；
bonoffrecTj=bonTj+boffTj+brecTj(27)；
conoffrecTj=conTj+coffTj+crecTj(28)；
Wherein：[] is rounding algorithm, and Q indicates bracket function, influence of the reaction different voltages modulation degree to loss；H indicate (0,
Pi/2] in the number that intersects with threshold voltage of bridge arm voltage modulating wave；aonoffrecTj、bonoffrecTj、conoffrecTjIt indicates respectively
The sum of IGBT turn-on consumptions, turn-off power loss and the reversed cut-off loss curve fitting parameter of diode when junction temperature is Tj.
6. determining method as described in claim 1, which is characterized in that the step 6 includes the following steps：
Step 6.1：Calculate the switching loss of input terminal MMC transverter three phase power devices；
MMC transverter symmetrical operations solve the switching loss of input terminal MMC transverter three phase power devices according to step 5, as follows
Shown in formula (29)：
Psw_3=3*Psw_1(29)；
Step 6.2：Calculate the switching loss of output end MMC transverter three phase power devices：As shown in following formula (30)：
P′sw_3=3*P 'sw_1(30)；
Step 6.2：Calculate the switching loss of all power devices in MMC-DC/AC/DC converters
Input terminal in step 6.1 and 6.2 is added with the switching loss of output end MMC to own in MMC-DC/AC/DC converters
The switching loss of power device, as shown in following formula (31)：
Ptotal=Psw_3+P′sw_3(31)；
Wherein：Psw_1, P`sw_1 indicate the switch damage of input side and the single-phase upper and lower bridge arm power device of outlet side MMC respectively
Consumption；PtotalFor the switching loss of all power devices in MMC-DC/AC/DC converters.
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|---|---|---|---|---|
| US20210323434A1 (en) * | 2020-04-21 | 2021-10-21 | Hyundai Motor Company | Wireless power transfer apparatus, wireless power transfer system of vehicle, and control method thereof |
| US11987148B1 (en) * | 2023-02-14 | 2024-05-21 | GM Global Technology Operations LLC | Optimal control strategy for a distributed low voltage system with unidirectional direct current converters |
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| CN109997304B (en) * | 2016-08-26 | 2021-11-09 | 通用电气公司 | Power conversion system and related method |
| CN106787872B (en) * | 2016-12-12 | 2019-06-04 | 全球能源互联网研究院有限公司 | A kind of method of determining H bridge module and cascade multilevel converter safety operation area |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102570864A (en) * | 2011-12-08 | 2012-07-11 | 华北电力大学 | Online loss calculation method for modular multilevel converter |
| EP2667279A1 (en) * | 2011-01-18 | 2013-11-27 | Tokyo Institute of Technology | Power converter and method for controlling same |
| CN103715935A (en) * | 2013-11-27 | 2014-04-09 | 国家电网公司 | Modularized multi-level voltage source type converter-based loss determination method |
| CN103995981A (en) * | 2014-06-06 | 2014-08-20 | 中国能源建设集团广东省电力设计研究院 | Method for assessing loss of MMC current converter in flexible direct-current transmission system |
| CN104217130A (en) * | 2014-09-23 | 2014-12-17 | 国家电网公司 | Method for calculating loss of MMC (Modular Multilevel Converter) |
-
2014
- 2014-12-30 CN CN201410850972.XA patent/CN105811771B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2667279A1 (en) * | 2011-01-18 | 2013-11-27 | Tokyo Institute of Technology | Power converter and method for controlling same |
| CN102570864A (en) * | 2011-12-08 | 2012-07-11 | 华北电力大学 | Online loss calculation method for modular multilevel converter |
| CN103715935A (en) * | 2013-11-27 | 2014-04-09 | 国家电网公司 | Modularized multi-level voltage source type converter-based loss determination method |
| CN103995981A (en) * | 2014-06-06 | 2014-08-20 | 中国能源建设集团广东省电力设计研究院 | Method for assessing loss of MMC current converter in flexible direct-current transmission system |
| CN104217130A (en) * | 2014-09-23 | 2014-12-17 | 国家电网公司 | Method for calculating loss of MMC (Modular Multilevel Converter) |
Non-Patent Citations (1)
| Title |
|---|
| 基于结温反馈方法的模块化多电平换流器型高压直流输电阀损耗评估;屠卿瑞;《高电压技术》;20120630;第38卷(第6期);第1507-1510页第2节、第3.2节、第6节，图1-7 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20210323434A1 (en) * | 2020-04-21 | 2021-10-21 | Hyundai Motor Company | Wireless power transfer apparatus, wireless power transfer system of vehicle, and control method thereof |
| US11987148B1 (en) * | 2023-02-14 | 2024-05-21 | GM Global Technology Operations LLC | Optimal control strategy for a distributed low voltage system with unidirectional direct current converters |
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