CN102013825B - Loss analysis method for diode clamping type three-level voltage source converter (VSC) - Google Patents
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Abstract
本发明是一种二极管箝位式三电平电压源换流器(Voltage Source Converter,VSC)损耗分析方法。包括有如下步骤:1)分析二极管箝位式三电平VSC的导通规律,建立绝缘栅双极型晶体管(Insulated Gate Bipolar Transistor,IGBT)的多项式损耗模型;2)将IGBT的导通压降和开关损耗表示成电流的二次多项式;3)采用多项式拟合的方法来计算器件的损耗。本发明采用多项式拟合的方法简单快速地计算损耗,在此基础上,分析损耗随着功率因数和调制度的变化情况,和不同的运行点各个器件的损耗分布情况,给器件参数的选择和热设计提供了依据,具有较大的实用价值。
The invention relates to a method for analyzing the loss of a diode-clamped three-level voltage source converter (Voltage Source Converter, VSC). It includes the following steps: 1) Analyze the conduction law of the diode-clamped three-level VSC, and establish a polynomial loss model for the insulated gate bipolar transistor (IGBT); 2) Calculate the conduction voltage drop of the IGBT and switching losses are expressed as a quadratic polynomial of the current; 3) The loss of the device is calculated by using a polynomial fitting method. The present invention adopts the polynomial fitting method to calculate the loss simply and quickly, and on this basis, analyze the change of the loss along with the power factor and the modulation degree, and the loss distribution of each device at different operating points, and give the selection of device parameters and Thermal design provides a basis and has great practical value.
Description
技术领域 technical field
本发明是一种用于分析各个器件的损耗分布随着功率因数和调制度的变化情况的二极管箝位式三电平电压源换流器损耗分析方法,属于二极管箝位式三电平VSC损耗分析方法的改造技术。 The invention is a diode-clamped three-level voltage source converter loss analysis method for analyzing the loss distribution of each device as the power factor and modulation change, which belongs to the diode-clamped three-level VSC loss Transformation techniques for analytical methods.
背景技术 Background technique
二极管钳位式(Diode Clamped,又称作中点钳位式Neutral Point Clamped)三电平电压源换流器(Voltage Source Converter, 简称VSC)主电路的结构,与飞跨电容钳位式三电平换流器相比,二极管钳位式三电平换流器具有显著的竞争力。钳位二极管的成本比飞跨电容的成本低,易于封装,并且控制方法简单,目前已在很多领域得到了广泛应用。功率损耗影响电压源换流器的效率和经济运行,是实际工程应用中必须关注的一个问题。 Diode Clamped (Diode Clamped, also known as Neutral Point Clamped) three-level voltage source converter (Voltage Source Converter, referred to as VSC) main circuit structure, and flying capacitor clamped three-electric Compared with the level converter, the diode-clamped three-level converter has significant competitiveness. The cost of the clamping diode is lower than that of the flying capacitor, it is easy to package, and the control method is simple, so it has been widely used in many fields. Power loss affects the efficiency and economical operation of voltage source converters, and is a problem that must be paid attention to in practical engineering applications.
损耗估算是换流器系统设计、器件参数选择和热设计的一个重要依据。国内外学者建立的IGBT损耗模型主要集中于物理结构的损耗模型。基于物理结构的损耗模型要应用到实际生产中不太容易,特别是模型参数的确定是一个比较复杂的过程,对一般的用户来说有一定困难。 Loss estimation is an important basis for converter system design, device parameter selection and thermal design. The IGBT loss models established by scholars at home and abroad mainly focus on the loss model of the physical structure. It is not easy to apply the loss model based on physical structure to actual production, especially the determination of model parameters is a relatively complicated process, which is difficult for ordinary users.
发明内容 Contents of the invention
本发明的目的在于考虑上述问题而提供一种简单方便,快速实用的二极管箝位式三电平电压源换流器损耗分析方法。本发明给器件参数的选择和热设计提供了依据。 The object of the present invention is to provide a simple, convenient, fast and practical method for analyzing the loss of a diode-clamped three-level voltage source converter in consideration of the above problems. The invention provides a basis for the selection of device parameters and thermal design.
本发明的技术方案是:本发明二极管箝位式三电平电压源换流器损耗分析方法,其包括有如下步骤: The technical solution of the present invention is: the loss analysis method of the diode-clamped three-level voltage source converter of the present invention, which includes the following steps:
1)分析二极管箝位式三电平电压源换流器的导通规律,建立IGBT的多项式损耗模型; 1) Analyze the conduction law of the diode-clamped three-level voltage source converter, and establish a polynomial loss model of the IGBT;
2)将IGBT的导通压降和开关损耗表示成电流的二次多项式; 2) Express the turn-on voltage drop and switching loss of the IGBT as a quadratic polynomial of current;
3)采用多项式拟合的方法来计算器件的损耗。 3) Use the method of polynomial fitting to calculate the loss of the device.
上述步骤3)按如下具体步骤进行: The above step 3) is carried out according to the following specific steps:
a. 根据IGBT厂商提供的用户手册,采用多项式拟合的方法得到IGBT的特性曲线; a. According to the user manual provided by the IGBT manufacturer, use the polynomial fitting method to obtain the characteristic curve of the IGBT;
b.分析二极管箝位式三电平电压源换流器的导通规律,得到各个开关管的导通占空比; b. Analyze the conduction law of the diode-clamped three-level voltage source converter, and obtain the conduction duty ratio of each switch tube;
c.开关器件的通态损耗计算: c. On-state loss calculation of switching devices:
由于二极管钳位式三电平换流器结构是对称的,通常选用的各IGBT模块和钳位二极管特性相同,因此仅需对4个主开关管VT1、VT2、VD3、VD4和其中的钳位二极管VD5的损耗进行分析, Since the structure of the diode-clamped three-level converter is symmetrical, the IGBT modules and clamping diodes usually selected have the same characteristics, so only the four main switching tubes VT1, VT2, VD3, VD4 and the clamping The loss of diode VD5 is analyzed,
d.开关器件的开关损耗计算 d. Switching loss calculation of switching devices
开关损耗的计算公式为 The formula for calculating the switching loss is
式中T o—工频周期,T s —开关周期; In the formula, T o —power frequency period, T s —switching period;
由此可以得到VT1的开关损耗PT1sw,VD5的反向恢复损耗PD5rec,VT2的开关损耗PT2sw,VD4的反向恢复损耗PD4rec From this, the switching loss P T1sw of VT1, the reverse recovery loss P D5rec of VD5, the switching loss P T2sw of VT2, and the reverse recovery loss P D4rec of VD4
d. 二极管箝位式三电平电压源换流器的损耗计算 d. Loss calculation of diode-clamped three-level voltage source converter
二极管钳位式三电平换流器的损耗主要为IGBT模块的损耗,包括IGBT部分的通态损耗、开关损耗和反向并联二极管的通态损耗和反向恢复损耗,以及钳位二极管的通态损耗和反向恢复损耗,在此基础上,分析损耗随着功率因数和调制度的变化情况。 The loss of the diode-clamped three-level converter is mainly the loss of the IGBT module, including the on-state loss and switching loss of the IGBT part, the on-state loss and reverse recovery loss of the antiparallel diode, and the on-state loss and reverse recovery loss of the clamping diode. State loss and reverse recovery loss, on this basis, analyze the change of loss with power factor and modulation degree.
上述电压源换流器交流侧电流为正弦波形,直流侧电容电压是平衡的。 The current on the AC side of the above-mentioned voltage source converter is a sinusoidal waveform, and the capacitor voltage on the DC side is balanced.
本发明由于采用先通过分析二极管箝位式三电平电压源换流器的导通规律,建立IGBT的多项式损耗模型;再将IGBT的导通压降和开关损耗表示成电流的二次多项式;并采用多项式拟合的方法来计算器件的损耗的方法,简单方便,快速实用。本发明给器件参数的选择和热设计提供了依据。本发明是一种方便实用的二极管箝位式三电平电压源换流器损耗分析方法。 The present invention establishes the polynomial loss model of the IGBT by first analyzing the conduction law of the diode-clamped three-level voltage source converter; and then expresses the conduction voltage drop and switching loss of the IGBT as a quadratic polynomial of current; And the method of calculating the loss of the device by the method of polynomial fitting is simple, convenient, fast and practical. The invention provides a basis for the selection of device parameters and thermal design. The invention is a convenient and practical method for analyzing the loss of a diode-clamped three-level voltage source converter.
附图说明 Description of drawings
图1是单相二极管箝位式三电平电压源换流器的拓扑结构。 Figure 1 is the topology of a single-phase diode-clamped three-level voltage source converter.
图2的左右两部分分别是外面IGBT的通态损耗和开关损耗随功率因数和调制度的变化图。 The left and right parts of Figure 2 are diagrams showing the variation of the on-state loss and switching loss of the external IGBT with the power factor and modulation degree.
图3的左右两部分分别是外面二极管的通态损耗和反向恢复损耗随功率因数和调制度的变化图。 The left and right parts of Figure 3 are the diagrams of the on-state loss and reverse recovery loss of the external diode as a function of power factor and modulation degree.
图4的左右两部分分别是里面IGBT的通态损耗和开关损耗随功率因数和调制度的变化图。 The left and right parts of Figure 4 are diagrams showing the variation of the on-state loss and switching loss of the IGBT with power factor and modulation degree.
图5的左右两部分分别是里面二极管的通态损耗和反向恢复损耗随功率因数和调制度的变化图。 The left and right parts of Figure 5 are diagrams of the on-state loss and reverse recovery loss of the diode inside as a function of power factor and modulation degree.
图6的左右两部分分别是箝位二极管的通态损耗和反向恢复损耗随功率因数和调制度的变化图。 The left and right parts of Fig. 6 are the change diagrams of the on-state loss and reverse recovery loss of the clamp diode with the power factor and modulation degree.
图7-10中所示柱式损耗图中的黑色表示通态损耗,白色表示开关损耗,从左向右所示的1-5五个柱状损耗分别表示外面IGBT、外面二极管、里面IGBT、里面二极管和箝位二极管的损耗图。 The black in the columnar loss diagram shown in Figure 7-10 represents the on-state loss, and the white represents the switching loss. The five columnar losses shown from left to right represent the outer IGBT, outer diode, inner IGBT, and inner Loss plot of diode and clamping diode.
图7是功率因数为1调制度为1时的损耗分布图。 Fig. 7 is a loss distribution diagram when the power factor is 1 and the modulation degree is 1.
图8是功率因数为-1调制度为1时的损耗分布图。 Fig. 8 is a loss distribution diagram when the power factor is -1 and the modulation degree is 1.
图9是功率因数为1调制度为0.05时的损耗分布图。 Fig. 9 is a loss distribution diagram when the power factor is 1 and the modulation degree is 0.05.
图10是功率因数为-1调制度为0.05时的损耗分布图。 Fig. 10 is a loss distribution diagram when the power factor is -1 and the modulation degree is 0.05.
图中各符号为:E、直流侧电压;M、调制度;pf、功率因数;PToutcond、外面IGBT的通态损耗;PToutsw、外面IGBT的开关损耗; PDoutcond、外面二极管的通态损耗;PDoutrec、外面二极管的反向恢复损耗损耗; PTincond、里面IGBT的通态损耗;PTinsw、里面IGBT的开关损耗;PDincond、里面二极管的通态损耗;Pinrec、里面二极管的反向恢复损耗损耗;PDnpccond、箝位二极管的通态损耗;PDnpcrec、箝位二极管的反向恢复损耗损耗;Tout、外面的IGBT;Dout、外面的二极管;Tin、里面的IGBT;Din、里面的二极管;Dnpc、箝位二极管。 The symbols in the figure are: E, DC side voltage; M , modulation degree; pf , power factor; P Toutcond , on-state loss of the external IGBT; P Toutsw , switching loss of the external IGBT; P Doutcond , on-state loss of the external diode ; P Doutrec , the reverse recovery loss of the outer diode; P Tincond , the on-state loss of the inner IGBT; P Tinsw , the switching loss of the inner IGBT; P Dincond , the on-state loss of the inner diode; P inrec , the reverse of the inner diode Recovery loss loss; P Dnpccond , the on-state loss of the clamping diode; P Dnpcrec , the reverse recovery loss of the clamping diode; Tout, the outer IGBT; Dout, the outer diode; Tin, the inner IGBT; Din, the inner Diode; Dnpc, clamping diode.
文中各符号为:C1=C2为两个直流电容,VT1、VT2、VT3、VT4为4个主开关管,VD1、VD2、VD3、VD4为4个续流二极管,VD5、VD6为两个钳位二极管,VT1和VT4为外面的IGBT,VT2和VT3为里面的IGBT,VD1和VD4为外面的二极管,VD2和VD3为里面的二极管,u CE为通态压降,i为交流侧电流,E Tsw为开关能量。 The symbols in the text are: C 1 =C 2 are two DC capacitors, VT1, VT2, VT3, VT4 are 4 main switch tubes, VD1, VD2, VD3, VD4 are 4 freewheeling diodes, VD5, VD6 are two Clamping diodes, VT1 and VT4 are the outer IGBTs, VT2 and VT3 are the inner IGBTs, VD1 and VD4 are the outer diodes, VD2 and VD3 are the inner diodes, u CE is the on-state voltage drop, i is the AC side current, E Tsw is the switching energy.
具体实施方式 Detailed ways
下面以电流为260A,基波频率50Hz,开关频率1500Hz,结温T j=125℃,直流电压为1800V,选取的IGBT模块是FF450R17ME3,钳位二极管BYM600A170DN2为例对本方法进行说明。 In the following, the current is 260A, the fundamental frequency is 50Hz, the switching frequency is 1500Hz, the junction temperature T j =125°C, the DC voltage is 1800V, the selected IGBT module is FF450R17ME3, and the clamping diode BYM600A170DN2 is taken as an example to illustrate this method.
根据IGBT和二极管用户手册提供的特性曲线,采用多项式拟合的方法得到通态压降u CE和E Tsw的表达式 According to the characteristic curve provided by the user manual of IGBT and diode, the expressions of on-state voltage drop u CE and E Tsw are obtained by polynomial fitting method
二极管钳位式三电平换流器的损耗主要为IGBT模块的损耗,包括IGBT部分的通态损耗、开关损耗和反向并联二极管的通态损耗和反向恢复损耗,以及钳位二极管的通态损耗和反向恢复损耗。由于二极管钳位式三电平换流器结构是对称的,通常选用的各IGBT模块和钳位二极管特性相同,因此仅需对4个主开关管VT1、VT2、VD3、VD4和其中的钳位二极管VD5的损耗进行分析, The loss of the diode-clamped three-level converter is mainly the loss of the IGBT module, including the on-state loss and switching loss of the IGBT part, the on-state loss and reverse recovery loss of the antiparallel diode, and the on-state loss and reverse recovery loss of the clamping diode. state loss and reverse recovery loss. Since the structure of the diode-clamped three-level converter is symmetrical, the IGBT modules and clamping diodes usually selected have the same characteristics, so only the four main switching tubes VT1, VT2, VD3, VD4 and the clamping The loss of diode VD5 is analyzed,
通过对主电路导通原理的分析,得到器件的开关状态,如表1所示。 Through the analysis of the conduction principle of the main circuit, the switching state of the device is obtained, as shown in Table 1.
表1 器件的开关状态 Table 1 Switching state of the device
采用载波同相层叠PWM调制时,从几何关系可以得到VT、VD的占空比,即P?0,VT的占空比为D P=Msin(a+θ),VD的占空比为D 0+=1-D P;N?0,VT的占空比为D N=- Msin(a+θ),VD的占空比为D 0-=1-D N,如表2所示。 When the carrier in-phase stacked PWM modulation is used, the duty cycle of VT and VD can be obtained from the geometric relationship, that is, P?0, the duty cycle of VT is D P = M sin( a + θ ), and the duty cycle of VD is D 0+ =1- D P ; N?0, the duty cycle of VT is D N =- M sin( a + θ ), the duty cycle of VD is D 0- =1- D N , as shown in Table 2 .
表2 VD的占空比 Table 2 Duty cycle of VD
由此,得到通态损耗的计算公式 From this, the calculation formula of on-state loss is obtained
开关状态为P?0,VT1和VD5换流,开关损耗主要为VT1的开关损耗和VD5的反向恢复损耗。开关状态为N?0,VT2和VD4换流,开关损耗主要为VT2的开关损耗和VD4的反向恢复损耗。 The switching state is P?0, VT1 and VD5 commutate, and the switching loss is mainly the switching loss of VT1 and the reverse recovery loss of VD5. The switching state is N?0, VT2 and VD4 commutate, and the switching loss is mainly the switching loss of VT2 and the reverse recovery loss of VD4.
开关损耗的计算公式为 The formula for calculating the switching loss is
图2-6为各个器件的损耗随功率因数和调制度的变化情况。可以看出,随着调制度M增大,VT1的占空比增大,则通态损耗增大;VT2在[π-θ-~π]的占空比减小,通态损耗减小;VD3和VD4的占空比增大,通态损耗增大;VD5的占空比减小,通态损耗减小。随着功率因数pf降低,VT1的导通时间减小,导通损耗减少;VT2的导通时间不变,但占空比大的导通时间减小,占空比小的导通时间增大,故通态损耗减小;VD3和VD4导通时间增大,通态损耗增大;VD5的导通时间不变,但两个导通阶段的时间和相应 的占空比发生了变化,故通态损耗要变化。 Figure 2-6 shows the variation of the loss of each device with the power factor and modulation degree. It can be seen that as the modulation degree M increases, the duty cycle of VT1 increases, and the on-state loss increases; the duty cycle of VT2 in [π-θ-~π] decreases, and the on-state loss decreases; The duty cycle of VD3 and VD4 increases, and the on-state loss increases; the duty cycle of VD5 decreases, and the on-state loss decreases. As the power factor pf decreases, the conduction time of VT1 decreases, and the conduction loss decreases; the conduction time of VT2 remains unchanged, but the conduction time with a large duty cycle decreases, and the conduction time with a small duty cycle increases , so the on-state loss decreases; the on-time of VD3 and VD4 increases, and the on-state loss increases; the on-time of VD5 remains unchanged, but the time of the two conduction stages and the corresponding duty cycle have changed, so On-state losses vary.
随着功率因数pf降低,VT1和VD5的开关范围变窄,因此开关损耗降低;VT2和VD4的开关范围变大,开关损耗增大。 As the power factor pf decreases, the switching range of VT1 and VD5 narrows, so the switching loss decreases; the switching range of VT2 and VD4 becomes larger, and the switching loss increases.
图7-10为二极管钳位式三电平换流器在边界处的损耗分布图,分别是调制度pf=1、M=1, pf=-1、M=1, pf=1、M=0.05,和 pf=-1、M=0.05。 Figure 7-10 is the loss distribution diagram of the diode-clamped three-level converter at the boundary, respectively, the modulation degree pf =1, M =1, pf =-1, M =1, pf =1, M = 0.05, and pf =-1, M =0.05.
可以看出这四种情况下的损耗分布图最不平衡,功率因数pf=1,调制度M=1时,发生损耗最多的是外面的IGBT;功率因数pf=-1,调制度M=1时,发生损耗最多的是外面的二极管;功率因数pf=1,调制度很低时,发生损耗最多的是钳位二极管;功率因数pf=-1,调制度M很低时,发生损耗最多的是里面的IGBT。 It can be seen that the loss distribution diagram in these four cases is the most unbalanced. When the power factor pf = 1 and the modulation degree M = 1, the outer IGBT has the most loss; the power factor pf = -1 and the modulation degree M = 1 When the power factor pf = 1, when the modulation degree is very low, the clamping diode will cause the most loss; when the power factor pf = -1, and the modulation degree M is very low, the most loss will occur It is the IGBT inside.
上述实施例的计算表明,本发明提供的二极管箝位式三电平VSC损耗分析方法简单快速实用,给器件参数的选择和热设计提供了依据。 The calculations of the above embodiments show that the diode-clamped three-level VSC loss analysis method provided by the present invention is simple, fast and practical, and provides a basis for device parameter selection and thermal design.
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CN105553314A (en) * | 2015-12-21 | 2016-05-04 | 哈尔滨工业大学 | Hybrid modular multilevel converter topological structure based on three-level submodules and two-level submodules |
CN108880309B (en) * | 2018-08-02 | 2019-08-23 | 山东建筑大学 | A kind of three direct tracking and controlling method of level grid-connected converter transient current of I type |
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