CN102570780A - Intelligent power module - Google Patents
Intelligent power module Download PDFInfo
- Publication number
- CN102570780A CN102570780A CN2011102794384A CN201110279438A CN102570780A CN 102570780 A CN102570780 A CN 102570780A CN 2011102794384 A CN2011102794384 A CN 2011102794384A CN 201110279438 A CN201110279438 A CN 201110279438A CN 102570780 A CN102570780 A CN 102570780A
- Authority
- CN
- China
- Prior art keywords
- insulated gate
- power tube
- gate bipolar
- bipolar power
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention relates to an intelligent power module which comprises a first resistor, a second resistor, a third resistor, a first insulated gate bipolar power tube and a second insulated gate bipolar power tube, wherein one end of the first resistor is connected with a high-voltage side drive signal HO end, the other end of the first resistor is connected with a grid electrode of the first insulated gate bipolar power tube; an emitter electrode of the first insulated gate bipolar power tube is connected with a collector electrode of the second insulated gate bipolar power tube, a collector electrode of the first insulated gate bipolar power tube is connected with a high-voltage end P; an emitter electrode of the second insulated gate bipolar power tube is grounded through the third resistor; and one end of the second resistor is connected with a low-voltage side drive signal LO end, and the other end of the second resistor is connected with a grid electrode of the second insulated gate bipolar power tube. The intelligent power module is characterized by also comprising a first back discharge circuit and a second back discharge circuit, wherein the input end of the first back discharge circuit is connected with the grid electrode of the first insulated gate bipolar power tube, the output end of the first back discharge circuit is connected with the emitter electrode of the first insulated gate bipolar power tube, another end of the first back discharge circuit is connected with the high-voltage end P; and the input end of the second back discharge circuit is connected with the grid electrode of the second insulated gate bipolar power tube, the output end of the second back discharge circuit is connected with the emitter electrode of the first insulated gate bipolar power tube, and another end of the first back discharge circuit is connected with the collector electrode of the second insulated gate bipolar power tube. According to the intelligent power module, release of high-voltage energy is quickened, and service life of the first insulated gate bipolar power tube and the second insulated gate bipolar power tube is prolonged.
Description
Technical field
The present invention relates to the abnormal protection technology of power semiconductor and the Driving technique of IGBT, relate in particular to a SPM.
Background technology
SPM is that IPM (Intelligent Power Module) is a kind of power drive series products with power electronics and integrated circuit technique combination.SPM integrates device for power switching and high-voltage driving circuit, and in keep overvoltage, overcurrent and failure detector circuit such as overheated.SPM receives the control signal of MCU on the one hand, drives subsequent conditioning circuit work, sends the state detection signal of system back to MCU on the other hand.Compare with the discrete scheme of tradition; SPM wins increasing market with advantages such as its high integration, high reliability; Being particularly suitable for the frequency converter and the various inverter of drive motors, is a kind of desirable power electronic device of frequency control, metallurgical machinery, electric traction, servo-drive and frequency-conversion domestic electric appliances.
Because what SPM drove is inductive load; At conducting and the shutdown moment of the IGBT of upper and lower bridge arm, because the effect of inductance, electric current can not suddenly change; All there is the high pressure fast recovery diode to be used for back discharge so be used for the IGBT of SPM at present, as shown in Figure 1:
High-pressure side drive signal HO connects an end of first resistance R 1; The other end of first resistance R 1 connects the grid of the first insulated gate bipolar power tube IGBT1, and the collector electrode of the first insulated gate bipolar power tube IGBT1 links to each other with the negative electrode of the first high-voltage diode D1 and receives high-pressure side P;
Low-pressure side drive signal LO connects an end of second resistance R 2; The other end of second resistance R 2 connects the grid of the second insulated gate bipolar power tube IGBT2; The collector electrode of the second insulated gate bipolar power tube IGBT2 link to each other with the negative electrode of the second high-voltage diode D2 and with the emitter-base bandgap grading of the first insulated gate bipolar power tube IGBT1; And also the anode with the first high-voltage diode D1 links to each other, and this point is designated as VOUT;
The emitter-base bandgap grading of the second insulated gate bipolar power tube IGBT2 links to each other with the anode of the second high-voltage diode D2 and receives an end of the 3rd resistance R 3, the other end earthing potential GND of the 3rd resistance R 3.
The operation principle of foregoing circuit is following:
High-low level alternately appears in HO and LO, makes the high pressure first insulated gate bipolar power tube IGBT1 and the second insulated gate bipolar power tube IGBT2 alternate conduction, and the voltage of VOUT is alternate between P and GND.
Because what VOUT drove is inductive load, the electric current that VOUT is ordered can not suddenly change, and the process that VOUT point electric current changes is following: (1) is when first insulated gate bipolar power tube IGBT1 maintenance conducting, during the second insulated gate bipolar power tube IGBT2 remain off:
Electric current flows out from VOUT through the first insulated gate bipolar power tube IGBT1 from P, and it is constant that current value keeps;
(2) end when the first insulated gate bipolar power tube IGBT1 becomes from conducting, the second insulated gate bipolar power tube IGBT2 is from when becoming conducting:
Because the inductive load electric current can not suddenly change, electric current flows out from VOUT through the 3rd resistance R 3, the second high-voltage diode D2 from GND, and current value reduces gradually, and finally is decreased to 0;
(3) when the first insulated gate bipolar power tube IGBT1 remain off, when the second insulated gate bipolar power tube IGBT2 keeps conducting:
Electric current flows into VOUT from inductive load, and flows to GND through the second insulated gate bipolar power tube IGBT2, the 3rd resistance R 3, and it is constant that current value keeps;
(4) when the first insulated gate bipolar power tube IGBT1 from by becoming conducting, the second insulated gate bipolar power tube IGBT2 from conducting become by the time:
Because the inductive load electric current can not suddenly change, electric current flows into VOUT from inductive load, flows to P through high-voltage diode 105, and current value reduces gradually, and finally is decreased to 0.
More than the voltage and the current waveform of four kinds of states as shown in Figure 2.
Can find out that from the analysis of circuit working principle the existence of first and second high-voltage diode is at first and second insulated gate bipolar power tube shutdown moment the back discharge loop to be provided, other the time then need bear high voltage.Make first and second high-voltage diode when back discharge, bear high voltage through big electric current of forward and rapid the shutoff, very high to the performance requirement of first and second high-voltage diode; And when first and second insulated gate bipolar power tube conducting; High voltage can produce bigger fluctuation usually; The withstand voltage formation reverse breakdown that surpasses first and second high-voltage diode sometimes; Therefore the reverse breakdown current that first and second high-voltage diode can bear is less, in the occasion that the high-voltage power voltage fluctuation is big, energy is bigger, often take place first,
The phenomenon that two high-voltage diodes burn prior to first and second insulated gate bipolar power tube; First and second high-voltage diode burns the back and forms short circuit, thus cause drive circuit burn and then burn whole SPM, therefore, the introducing of first and second high-voltage diode has reduced the reliability of SPM on the contrary.
Summary of the invention
The present invention is intended to solve the deficiency of prior art; Provide a kind of consideration more thorough SPM; It possesses the back discharge and the forward voltage endurance of prior art; And have the forward discharge capability, accelerate the release of high-pressure energy, the useful life of improving first and second insulated gate bipolar power tube.
In order to achieve the above object, technical scheme of the present invention is: a kind of SPM comprises first resistance, second resistance, the 3rd resistance, the first insulated gate bipolar power tube and the second insulated gate bipolar power tube; The one termination high-pressure side drive signal HO end of wherein said first resistance; The other end of said first resistance connects the grid of the first insulated gate bipolar power tube; The emitter-base bandgap grading of the said first insulated gate bipolar power tube connects the collector electrode of the second insulated gate bipolar power tube, and the collector electrode of the first insulated gate bipolar power tube meets high-pressure side P; The emitter-base bandgap grading of the said second insulated gate bipolar power tube is through the 3rd grounding through resistance; The one termination low-pressure side drive signal LO end of said second resistance, the grid of another termination second insulated gate bipolar power tube of second resistance; It is characterized in that also comprising the first back discharge circuit and the second back discharge circuit; The grid of the input termination first insulated gate bipolar power tube of the wherein said first back discharge circuit; The emitter-base bandgap grading of the output termination first insulated gate bipolar power tube of the first back discharge circuit, the another termination high-pressure side of first back discharge circuit P; The grid of the input termination second insulated gate bipolar power tube of the second back discharge circuit; The emitter-base bandgap grading of the output termination first insulated gate bipolar power tube of the second back discharge circuit, the collector electrode of the another termination second insulated gate bipolar power tube of the second back discharge circuit.
The said first back discharge circuit comprises first not gate, second not gate, FET, the 4th resistance, the 5th resistance, the 6th resistance and the 3rd high-voltage diode; Wherein said first not gate and second not gate are connected mutually; The input of first not gate and the second not gate series circuit connects the grid of the first insulated gate bipolar power tube; The grid of output termination FET; The drain electrode of FET meets high-pressure side P through the 4th resistance, and the source electrode of FET connects the emitter-base bandgap grading of the first insulated gate bipolar power tube through the 6th resistance; Said the 3rd diode is connected with the 5th resistance, the source electrode of a termination FET of the 3rd high-voltage diode and the 5th resistance series circuit, another termination high-pressure side P.
The structure of the said first back discharge circuit and the second back discharge circuit is identical.
The present invention's beneficial effect compared with prior art is: the discharge bypass is provided when first and second insulated gate bipolar power tube conducting; Accelerate the release of high-pressure energy; Reduce the electric current of first and second insulated gate bipolar power tube; Reduce the caloric value of first and second insulated gate bipolar power tube, thereby improve the useful life of first and second insulated gate bipolar power tube; When first and second insulated gate bipolar power tube turn-offs, quickened the decay of reverse current, further reduce the caloric value of first and second insulated gate bipolar power tube.
Description of drawings
Fig. 1 traditional intelligence power model;
The key point waveform of Fig. 2 traditional intelligence power model;
Fig. 3 circuit block diagram of the present invention;
The circuit theory diagrams of Fig. 4 specific embodiment of the present invention.
Specific embodiment
To combine accompanying drawing and specific embodiment that content of the present invention is further specified below.
As shown in Figure 3, a kind of SPM comprises first resistance R 1, second resistance R 2, the 3rd resistance R 3, the first insulated gate bipolar power tube IGBT1 and the second insulated gate bipolar power tube IGBT2; The one termination high-pressure side drive signal HO end of wherein said first resistance R 1; The other end of said first resistance R 1 connects the grid of the first insulated gate bipolar power tube IGBT1; The emitter-base bandgap grading of the said first insulated gate bipolar power tube IGBT1 connects the collector electrode of the second insulated gate bipolar power tube IGBT2; This tie point is VOUT, and the collector electrode of the first insulated gate bipolar power tube IGBT1 meets high-pressure side P; The emitter-base bandgap grading of the said second insulated gate bipolar power tube IGBT2 is through the 3rd resistance R 3 ground connection; The one termination low-pressure side drive signal LO end of said second resistance R 2, the grid of another termination second insulated gate bipolar power tube IGBT2 of second resistance R 2; Characteristics of the present invention are also to comprise the first back discharge circuit 1 and the second back discharge circuit 2; The grid of the input termination first insulated gate bipolar power tube IGBT1 of the wherein said first back discharge circuit 1; The emitter-base bandgap grading of the output termination first insulated gate bipolar power tube IGBT1 of the first back discharge circuit 1, the first back discharge circuit, 1 another termination high-pressure side P; The grid of the input termination second insulated gate bipolar power tube IGBT2 of the second back discharge circuit 2; The emitter-base bandgap grading of the output termination first insulated gate bipolar power tube IGBT1 of the second back discharge circuit 2, the collector electrode of the second back discharge circuit, the 2 another termination second insulated gate bipolar power tube IGBT2.
As shown in Figure 4, in the present embodiment, the said first back discharge circuit 1 comprises the first not gate T1, the second not gate T2, FET DMOS, the 4th resistance R 4, the 5th resistance R 5, the 6th resistance R 6 and the 3rd high-voltage diode D3; The wherein said first not gate T1 and the second not gate T2 connect mutually; The input of the first not gate T1 and the second not gate T2 series circuit connects the grid of the first insulated gate bipolar power tube IGBT1; The grid of output termination FET DMOS; The drain electrode of FET DMOS meets high-pressure side P through the 4th resistance R 4, and the source electrode of FET DMOS connects the emitter-base bandgap grading of the first insulated gate bipolar power tube IGBT1 through the 6th resistance R 6; Said the 3rd high-voltage diode D3 connects with the 5th resistance R 5, the source electrode of a termination FET DMOS of the 3rd diode D3 and the 5th resistance R 5 series circuits, another termination high-pressure side P.The structure of the said first back discharge circuit 1 and the second back discharge circuit 2 is identical.
During work; When the first insulated gate bipolar power tube IGBT1 conducting; The A point is a high level; Because the ON time of the first insulated gate bipolar power tube IGBT1 is shorter than FET DMOS,, guarantee that FET DMOS is consistent as far as possible with the ON time of the first insulated gate bipolar power tube IGBT1 so A point signal arrives FET DMOS through the first not gate T1 and second not gate T2 time-delay back; Because FET DMOS conducting; So back discharge circuit 1 just provides one from the path of P through the 4th resistance R 4, FET DMOS pipe the 309, the 6th resistance R 6, and (forward) discharge circuit from the first I/O end to the second I/O end promptly is provided; This circuit can effectively reduce the electric current that flows through the first insulated gate bipolar power tube IGBT1, reduces by the caloric value of the first insulated gate bipolar power tube IGBT1; And because the current capacity of FET DMOS is not strong, so need series connection the 4th resistance R 4 and the 6th resistance R 6, control flows is crossed the electric current of FET DMOS, avoids FET DMOS overcurrent to burn.
When the first insulated gate bipolar power tube IGBT1 turn-offs; The A point is a low level; Because the turn-off time of the first insulated gate bipolar power tube IGBT1 is shorter than FET DMOS; So A point signal arrives FET DMOS through the first not gate T1 and second not gate T2 time-delay back, guarantee that FET DMOS is consistent as far as possible with the ON time of the first insulated gate bipolar power tube IGBT1; Because FET DMOS is in off state, the first I/O end of back discharge circuit 2 can bear high withstand voltage at P o'clock to the second I/O end VOUT point at this moment; And through the 6th resistance R 6, the 3rd high-voltage diode D3, the 5th resistance R 5 the back discharge circuit is provided from VOUT, promptly the second I/O end from back discharge circuit 1 provides the back discharge circuit to the first I/O end; The existence of the 6th resistance R 6 and the 5th resistance R 5 can be accelerated the consumption of energy, effectively reduces the duration of back discharge, plays positive role to protecting the 3rd high-voltage diode D3.
Claims (3)
1. a SPM comprises first resistance (R1), second resistance (R2), the 3rd resistance (R3), the first insulated gate bipolar power tube (IGBT1) and the second insulated gate bipolar power tube (IGBT2); The one termination high-pressure side drive signal HO end of wherein said first resistance (R1); The other end of said first resistance (R1) connects the grid of the first insulated gate bipolar power tube (IGBT1); The emitter-base bandgap grading of the said first insulated gate bipolar power tube (IGBT1) connects the collector electrode of the second insulated gate bipolar power tube (IGBT2), and the collector electrode of the first insulated gate bipolar power tube (IGBT1) meets high-pressure side P; The emitter-base bandgap grading of the said second insulated gate bipolar power tube (IGBT2) is through the 3rd resistance (R3) ground connection; The one termination low-pressure side drive signal LO end of said second resistance (R2), the grid of another termination second insulated gate bipolar power tube (IGBT2) of second resistance (R2); It is characterized in that also comprising the first back discharge circuit (1) and the second back discharge circuit (2); The grid of the input termination first insulated gate bipolar power tube (IGBT1) of the wherein said first back discharge circuit (1); The emitter-base bandgap grading of the output termination first insulated gate bipolar power tube (IGBT1) of the first back discharge circuit (1), the another termination high-pressure side of the first back discharge circuit (1) P; The grid of the input termination second insulated gate bipolar power tube (IGBT2) of the second back discharge circuit (2); The emitter-base bandgap grading of the output termination first insulated gate bipolar power tube (IGBT1) of the second back discharge circuit (2), the collector electrode of the another termination second insulated gate bipolar power tube (IGBT2) of the second back discharge circuit (2).
2. SPM according to claim 1 is characterized in that the said first back discharge circuit (1) comprises first not gate (T1), second not gate (T2), FET (DMOS), the 4th resistance (R4), the 5th resistance (R5), the 6th resistance (R6) and the 3rd high-voltage diode (D3); Wherein said first not gate (T1) and second not gate (T2) be series connection mutually; The input of first not gate (T1) and second not gate (T2) series circuit connects the grid of the first insulated gate bipolar power tube (IGBT1); The grid of output termination FET (DMOS); The drain electrode of FET (DMOS) meets high-pressure side P through the 4th resistance (R4), and the source electrode of FET (DMOS) connects the emitter-base bandgap grading of the first insulated gate bipolar power tube (IGBT1) through the 6th resistance (R6); Said the 3rd high-voltage diode (D3) is connected with the 5th resistance (R5), the source electrode of a termination FET (DMOS) of the 3rd diode (D3) and the 5th resistance (R5) series circuit, another termination high-pressure side P.
3. SPM according to claim 1 is characterized in that the structure of the said first back discharge circuit (1) and the second back discharge circuit (2) is identical.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102794384A CN102570780A (en) | 2011-09-20 | 2011-09-20 | Intelligent power module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102794384A CN102570780A (en) | 2011-09-20 | 2011-09-20 | Intelligent power module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102570780A true CN102570780A (en) | 2012-07-11 |
Family
ID=46415434
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011102794384A Pending CN102570780A (en) | 2011-09-20 | 2011-09-20 | Intelligent power module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102570780A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007011193A (en) * | 2005-07-04 | 2007-01-18 | Matsushita Electric Ind Co Ltd | Plasma display panel driving circuit and display device |
| CN1941177A (en) * | 2005-09-29 | 2007-04-04 | 海力士半导体有限公司 | Delay locked loop circuit |
| CN201956925U (en) * | 2010-12-28 | 2011-08-31 | 广东易事特电源股份有限公司 | Inverter circuit for single-phase grid-connected inverter |
| CN202260991U (en) * | 2011-09-20 | 2012-05-30 | 广东美的电器股份有限公司 | Intelligent power module |
-
2011
- 2011-09-20 CN CN2011102794384A patent/CN102570780A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007011193A (en) * | 2005-07-04 | 2007-01-18 | Matsushita Electric Ind Co Ltd | Plasma display panel driving circuit and display device |
| CN1941177A (en) * | 2005-09-29 | 2007-04-04 | 海力士半导体有限公司 | Delay locked loop circuit |
| CN201956925U (en) * | 2010-12-28 | 2011-08-31 | 广东易事特电源股份有限公司 | Inverter circuit for single-phase grid-connected inverter |
| CN202260991U (en) * | 2011-09-20 | 2012-05-30 | 广东美的电器股份有限公司 | Intelligent power module |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101174788B (en) | Cut-out overvoltage protection circuit of electric voltage driving type power semiconductor device | |
| CN103427809B (en) | The protective circuit of insulated gate bipolar transistor | |
| CN102780474B (en) | Insulated gate bipolar transistor control circuit | |
| CN103178694A (en) | Insulated gate bipolar transistor gate driving push-pull circuit | |
| CN203406604U (en) | IGBT current foldback circuit and convertor assembly | |
| CN203406774U (en) | Large-power MOSFET negative-voltage drive circuit | |
| CN202564928U (en) | Insulated gate bipolar transistor protection circuit | |
| CN102136720B (en) | Method for detecting short circuit and open circuit faults of IGBT device and controller in online manner | |
| CN202384752U (en) | Switching power supply overcurrent protection circuit | |
| CN103036469A (en) | High-voltage pulse power supply | |
| CN109698611A (en) | Multistage drop grid voltage type SiC-MOSFET driving circuit | |
| CN103326324A (en) | IGBT module parallel connection protection circuit applied to high-power inverter | |
| CN110768651B (en) | Bidirectional direct current solid-state circuit breaker based on cathode short circuit grid-controlled thyristor | |
| CN202840920U (en) | IGBT (insulated gate bipolar transistor) drive circuit | |
| CN203180759U (en) | Gate driving push-pull circuit of insolated gate bipolar transistor | |
| CN203387396U (en) | IGBT (insulated gate bipolar transistor) inverter buffer circuit capable of being applied to high-frequency conditions | |
| CN110572011B (en) | IGBT drive circuit soft switching device with short-circuit protection | |
| CN111884536A (en) | Intelligent power module | |
| CN202772560U (en) | IGBT current foldback circuit and inductive load control circuit | |
| CN203027163U (en) | High-voltage pulse power supply | |
| CN102185286A (en) | High-power insulated gate bipolar transistor (IGBT) redundancy driving protection circuit | |
| CN202333786U (en) | Drive circuit for restraining IGBT (Insulated Gate Bipolar Transistor) overcurrent | |
| CN202586313U (en) | Overcurrent protection circuit for insulated gate bipolar transistor and inductive load control circuit | |
| CN203278204U (en) | IGBT module parallel-connection protection circuit applied to high-power inverter | |
| CN105049018A (en) | Novel solid-state relay |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: MIDEA GROUP CO., LTD. Free format text: FORMER OWNER: MEIDI ELECTRIC APPLIANCES CO., LTD., GUANGDONG Effective date: 20131211 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20131211 Address after: 528311 Guangdong, Foshan, Beijiao, the United States, the United States and the United States on the avenue of the United States, the headquarters of the United States building B floor, District, 26-28 Applicant after: Midea Group Co., Ltd. Address before: 528311 Beijiao, Foshan, Shunde District, the town of Guangdong, the United States Avenue, No. 6 Applicant before: Meidi Electric Appliances Co., Ltd., Guangdong |
|
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120711 |