CN201956925U - Inverter circuit for single-phase grid-connected inverter - Google Patents
Inverter circuit for single-phase grid-connected inverter Download PDFInfo
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- CN201956925U CN201956925U CN 201020684308 CN201020684308U CN201956925U CN 201956925 U CN201956925 U CN 201956925U CN 201020684308 CN201020684308 CN 201020684308 CN 201020684308 U CN201020684308 U CN 201020684308U CN 201956925 U CN201956925 U CN 201956925U
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
- H02M7/5388—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with asymmetrical configuration of switches
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Abstract
The utility model discloses an inverter circuit for a single-phase grid-connected inverter, comprising an inverter circuit part and a driving circuit part, wherein the inverter circuit comprises an IGBT (Insulated Gate Bipolar Transistor) VT1, a IGBTVT2, a IGBTVT3, a IGBTVT4, a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) VT5 and a MOSFETVT6; and the driving circuit part comprises a driving unit of the VT1, a driving unit of the VT3, driving units of the VT2 and the VT5 and driving units of the VT4 and the VT6. In the inverter circuit, the grid series resistance of a power MOSFET is smaller than the grid series resistance of an IFBT; the power MOSFET is conducted prior to the IGBT and is turned off behind the IGBT; by fully utilizing the characteristics that the IGBT has low conducting loss and the power MOSFET has low conducting and turn-off loss and considering the advantages of the IGBT and the power MOSFET, the defects of the IGBT and the power MOSFET are overcome, so that a lower bridge arm IGBT has zero voltage conducting characteristic of a soft switch and the low-current turn-off characteristic of an approximate soft switch, the loss of the system is reduced and the efficiency of the system is improved.
Description
Technical field
The utility model relates to the power technology field, particularly relates to a kind of inverter circuit of single-phase grid-connected inverter.
Background technology
In the single-phase grid-connected inverter technology in fields such as wind energy or photovoltaic, how to improve the conversion efficiency of inverter as much as possible, be an important techniques problem.In existing switching device, switching frequency and loss become a pair of contradiction, and the conduction voltage drop of IGBT is low, on-state loss is low, but switching loss is higher, are not suitable for the high frequency occasion.The opening of switch mosfet pipe, turn-off power loss are low, are fit to be applied in the high frequency occasion, but conduction loss than the IGBT height, and price is relatively costly.On the control method of the inverter circuit of single-phase grid-connected inverter, how the characteristics according to system adopt corresponding control strategies to improve the usefulness of system, also are problems that is worth further investigation.
The utility model content
The purpose of this utility model is to avoid weak point of the prior art and inverter circuit that a kind of single-phase grid-connected inverter is provided.
The purpose of this utility model realizes by following technical measures.
A kind of inverter circuit of single-phase grid-connected inverter comprises the inverter circuit part of single-phase full bridge and driving circuit section;
The switching tube of the last brachium pontis of described inverter circuit part adopts IGBT, and the switching tube of the following brachium pontis of described inverter circuit part adopts the structure of IGBT and MOSFET parallel connection;
IGBT VT1 and VT3 constitute the last brachium pontis of single-phase full bridge inverter circuit part, IGBT VT2 and power MOSFET VT5 parallel connection, and IGBT VT4 and power MOSFET VT6 parallel connection constitute single-phase full bridge inverter circuit following brachium pontis partly jointly;
The collector electrode of VT1 and VT3 is connected with dc bus positive pole+VDC, and the emitter of VT1 is connected with the collector electrode of VT2, and the emitter of VT3 is connected with the collector electrode of VT4; The collector electrode of VT2 is connected with the drain electrode of VT5, and the collector electrode of VT4 is connected with the drain electrode of T6; The emitter of the emitter of VT2, the source electrode of VT5, VT4, the source electrode of VT6 are connected with dc bus negative pole-VDC;
Described driving circuit section comprises the driver element of driver element, VT2 and VT5 of driver element, the VT3 of VT1, and the driver element of VT4 and VT6;
The driver element of VT1 is made of isolation drive unit 1, resistance R 1, R2, voltage-stabiliser tube ZD1, isolation drive unit 1 input fetches the signal Wave1 from central processing unit, Wave1 is the power frequency component with synchronized, the output drive signal of isolation drive unit 1 is connected through the grid of series resistance R1 and VT1, and the output common port of isolation drive unit 1 and the emitter of VT1 are connected; The negative electrode of voltage-stabiliser tube ZD1 is connected with the grid of VT1, and the anode of voltage-stabiliser tube ZD1 is connected with the emitter of VT1, pull down resistor R2 and ZD1 parallel connection;
The driver element of VT3 is made of isolation drive unit 2, resistance R 3, R4, voltage-stabiliser tube ZD2, the input of isolation drive unit 2 fetches the signal Wave2 from central processing unit, Wave2 is the power frequency component with synchronized, the output drive signal of isolation drive unit 2 is connected through the grid of series resistance R3 and VT3, and the output common port of isolation drive unit 2 and the emitter of VT3 are connected; The negative electrode of voltage-stabiliser tube ZD2 is connected with the grid of VT3, and the anode of voltage-stabiliser tube ZD2 is connected with the emitter of VT3, pull down resistor R4 and ZD2 parallel connection;
The driver element of VT2 and VT5 is made of isolation drive unit 3, resistance R 5, R6, R7, R8, voltage-stabiliser tube ZD3, ZD4; The resistance of resistance R 5, R6 for 1m Ω to 99m Ω, the resistance of resistance R 6 is less than the resistance of resistance R 5; The input of isolation drive unit 3 fetches from the SPWM of central processing unit signal PWM1, the output drive signal of isolation drive unit 3 is connected through the grid of series resistance R5 and VT2, simultaneously, the output drive signal of isolation drive unit 3 is connected through the grid of series resistance R6 and VT5; The output common port of isolation drive the unit 3 and emitter of VT2 and the source electrode of VT5 is connected; The negative electrode of voltage-stabiliser tube ZD3 is connected with the grid of VT2, and the anode of voltage-stabiliser tube ZD3 is connected with the emitter of VT2, pull down resistor R7 and ZD3 parallel connection; The negative electrode of voltage-stabiliser tube ZD4 is connected with the grid of VT5, and the anode of voltage-stabiliser tube ZD4 is connected with the source electrode of VT5, pull down resistor R8 and ZD4 parallel connection;
The driver element of VT4 and VT6 is made of isolation drive unit 4, resistance R 9, R10, R11, R12, voltage-stabiliser tube ZD5, ZD6; The resistance of resistance R 9, R10 for 1m Ω to 99m Ω, wherein the resistance of resistance R 10 is less than the resistance of resistance R 9; The input of isolation drive unit 4 fetches from the SPWM of central processing unit signal PWM2; The output drive signal of isolation drive unit 4 is connected through the grid of series resistance R9 and VT4, and simultaneously, the output drive signal of isolation drive unit 4 is connected through the grid of series resistance R10 and VT6; The output common port of isolation drive the unit 4 and emitter of VT4 and the source electrode of VT6 is connected; The negative electrode of voltage-stabiliser tube ZD5 is connected with the grid of VT4, and the anode of voltage-stabiliser tube ZD5 is connected with the emitter of VT4, pull down resistor R11 and ZD5 parallel connection; The negative electrode of voltage-stabiliser tube ZD5 is connected with the grid of VT6, and the anode of voltage-stabiliser tube ZD5 is connected with the source electrode of VT6, pull down resistor R12 and ZD6 parallel connection.
Single-phase grid-connected inverter circuit of the present utility model, adopt above-mentioned hardware circuit topology, make full use of the characteristic low of opening of the low and power MOSFET of IGBT conduction loss with turn-off power loss, both advantages have been taken into account, both deficiencies have been overcome, make down brachium pontis IGBT have the approximate soft switching characteristic that soft switching characteristic that no-voltage opens and little electric current turn-off, reduced the loss of system, improved the usefulness of system.
Description of drawings
Utilize accompanying drawing that the utility model is described further, but the content in the accompanying drawing does not constitute any restriction of the present utility model.
Fig. 1 is the circuit diagram of the inverter circuit part of an embodiment of the present utility model.
Fig. 2 is the circuit diagram of the driving circuit section of an embodiment of the present utility model.
Fig. 3 is the oscillogram that is added in driving circuit section of an embodiment of the present utility model.
Embodiment
The utility model is described in further detail with the following Examples.
An embodiment of the inverter circuit of single-phase grid-connected inverter of the present utility model comprises the inverter circuit part of single-phase full bridge as depicted in figs. 1 and 2, and driving circuit section;
As Fig. 1, the switching tube of the last brachium pontis of described inverter circuit part adopts IGBT, and the switching tube of the following brachium pontis of described inverter circuit part adopts the structure of IGBT and MOSFET parallel connection;
IGBT VT1 and VT3 constitute the last brachium pontis of single-phase full bridge inverter circuit part, IGBT VT2 and power MOSFET VT5 parallel connection, and IGBT VT4 and power MOSFET VT6 parallel connection constitute single-phase full bridge inverter circuit following brachium pontis partly jointly;
The collector electrode of VT1 and VT3 is connected with dc bus positive pole+VDC, and the emitter of VT1 is connected with the collector electrode of VT2, and the emitter of VT3 is connected with the collector electrode of VT4; The collector electrode of VT2 is connected with the drain electrode of VT5, and the collector electrode of VT4 is connected with the drain electrode of T6; The emitter of the emitter of VT2, the source electrode of VT5, VT4, the source electrode of VT6 are connected with dc bus negative pole-VDC;
As shown in Figure 2, described driving circuit section comprises the driver element of driver element, VT2 and VT5 of driver element, the VT3 of VT1, and the driver element of VT4 and VT6.
The driver element of VT1 is made of isolation drive unit 1, resistance R 1, R2, voltage-stabiliser tube ZD1, isolation drive unit 1 input fetches the signal Wave1 from central processing unit, Wave1 is the power frequency component with synchronized, the output drive signal of isolation drive unit 1 is connected through the grid of series resistance R1 and VT1, and the output common port of isolation drive unit 1 and the emitter of VT1 are connected; The negative electrode of voltage-stabiliser tube ZD1 is connected with the grid of VT1, and the anode of voltage-stabiliser tube ZD1 is connected with the emitter of VT1, pull down resistor R2 and ZD1 parallel connection.
The driver element of VT3 is made of isolation drive unit 2, resistance R 3, R4, voltage-stabiliser tube ZD2, the input of isolation drive unit 2 fetches the signal Wave2 from central processing unit, Wave2 is the power frequency component with synchronized, the output drive signal of isolation drive unit 2 is connected through the grid of series resistance R3 and VT3, and the output common port of isolation drive unit 2 and the emitter of VT3 are connected; The negative electrode of voltage-stabiliser tube ZD2 is connected with the grid of VT3, and the anode of voltage-stabiliser tube ZD2 is connected with the emitter of VT3, pull down resistor R4 and ZD2 parallel connection.
The driver element of VT2 and VT5 is made of isolation drive unit 3, resistance R 5, R6, R7, R8, voltage-stabiliser tube ZD3, ZD4; The resistance of resistance R 5, R6 for 1m Ω to 99m Ω, the resistance of resistance R 6 is less than the resistance of resistance R 5, power MOSFET VT5 turn-offs and lag behind IGBT VT2 prior to IGBT VT2 conducting like this; From the SPWM signal PWM1 of central processing unit, produce isolation drive through isolation drive unit 3; The output drive signal of isolation drive unit 3 is connected through the grid of series resistance R5 and VT2, and simultaneously, the output drive signal of isolation drive unit 3 is connected through the grid of series resistance R6 and VT5; The output common port of isolation drive the unit 3 and emitter of VT2 and the source electrode of VT5 is connected; The negative electrode of voltage-stabiliser tube ZD3 is connected with the grid of VT2, and the anode of voltage-stabiliser tube ZD3 is connected with the emitter of VT2, pull down resistor R7 and ZD3 parallel connection; The negative electrode of voltage-stabiliser tube ZD4 is connected with the grid of VT5, and the anode of voltage-stabiliser tube ZD4 is connected with the source electrode of VT5, pull down resistor R8 and ZD4 parallel connection.
The driver element of VT4 and VT6 is made of isolation drive unit 4, resistance R 9, R10, R11, R12, voltage-stabiliser tube ZD5, ZD6.The resistance of resistance R 9, R10 for 1m Ω to 99m Ω, wherein the resistance of resistance R 10 is less than the resistance of resistance R 9, power MOSFET VT6 turn-offs and lag behind IGBT VT4 prior to IGBT VT4 conducting like this.From the SPWM signal PWM2 of central processing unit, produce isolation drive through isolation drive unit 4; The output drive signal of isolation drive unit 4 is connected through the grid of series resistance R9 and VT4, and simultaneously, the output drive signal of isolation drive unit 4 is connected through the grid of series resistance R10 and VT6; The output common port of isolation drive the unit 4 and emitter of VT4 and the source electrode of VT6 is connected; The negative electrode of voltage-stabiliser tube ZD5 is connected with the grid of VT4, and the anode of voltage-stabiliser tube ZD5 is connected with the emitter of VT4, pull down resistor R11 and ZD5 parallel connection; The negative electrode of voltage-stabiliser tube ZD5 is connected with the grid of VT6, and the anode of voltage-stabiliser tube ZD5 is connected with the source electrode of VT6, pull down resistor R12 and ZD6 parallel connection.
Fig. 3 is the oscillogram that is added in driving circuit section.Be added in respectively on isolation drive unit 1 and the isolation drive unit 2 from power frequency component Wave1 central processing unit and synchronized, Wave2, produce the driving of the last brachium pontis of inversion full-bridge.The waveform of Wave1 and Wave2 is for replacing high level ON and zero OFF, and the Wave2 waveform is opposite with Wave1, and when the waveform of Wave1 was ON, Wave2 was OFF, and when the waveform of Wave1 was OFF, Wave2 was ON; SPWM signal PWM1, PWM2 from central processing unit are added in respectively on isolation drive unit 3 and the isolation drive unit 4, produce the driving of the following brachium pontis of inversion full-bridge.PWM1 has signal during for ON at Wave1, is zero at Wave1 during for OFF, and PWM2 has signal during for ON at Wave2, is zero at Wave2 during for OFF; In order to prevent the generation of brachium pontis and following bridge arm direct pass accident, the drive signal of last brachium pontis and following brachium pontis keeps certain Dead Time.
On hardware circuit, the switching tube of the last brachium pontis of single-phase full bridge inverter circuit part uses IGBT, and the switching tube of following brachium pontis adopts the structure of IGBT and MOSFET parallel connection.
Provide power frequency component and SPWM high-frequency signal with synchronized by the central processor unit of system,, drive the last brachium pontis of full bridge inverter and the switching tube of following brachium pontis respectively through after the isolation drive.
In the drive circuit of the following brachium pontis of single-phase full bridge inverter circuit part, the gate series resistance of power MOSFET makes power MOSFET prior to the IGBT conducting less than the gate series resistance of IGBT, turn-offs and lag behind IGBT.
The last brachium pontis IGBT drive signal of single-phase full bridge inverter circuit part adopts the power frequency drive signal of synchronized.The frequency of power frequency drive signal is lower, has reduced the switching frequency of IGBT, thereby has reduced the switching loss of IGBT.
The following brachium pontis IGBT of single-phase full bridge inverter circuit part and the drive signal of power MOSFET adopt high frequency SPWM signal, after through the isolation drive unit, are connected through series resistance and the grid of IGBT, the grid of power MOSFET respectively.
Central processor unit inside in system, the drive signal of last brachium pontis and following brachium pontis keeps certain Dead Time, avoids the generation of brachium pontis and following bridge arm direct pass accident.
Should be noted that at last; above embodiment only is used to the technical solution of the utility model is described but not to the restriction of the utility model protection range; although the utility model has been done detailed description with reference to preferred embodiment; those of ordinary skill in the art is to be understood that; can make amendment or be equal to replacement the technical solution of the utility model, and not break away from the essence and the scope of technical solutions of the utility model.
Claims (1)
1. the inverter circuit of a single-phase grid-connected inverter is characterized in that: comprise the inverter circuit part of single-phase full bridge, and driving circuit section;
The switching tube of the last brachium pontis of described inverter circuit part adopts IGBT, and the switching tube of the following brachium pontis of described inverter circuit part adopts the structure of IGBT and MOSFET parallel connection;
IGBT VT1 and VT3 constitute the last brachium pontis of single-phase full bridge inverter circuit part, IGBT VT2 and power MOSFET VT5 parallel connection, and IGBT VT4 and power MOSFET VT6 parallel connection constitute single-phase full bridge inverter circuit following brachium pontis partly jointly;
The collector electrode of VT1 and VT3 is connected with dc bus positive pole+VDC, and the emitter of VT1 is connected with the collector electrode of VT2, and the emitter of VT3 is connected with the collector electrode of VT4; The collector electrode of VT2 is connected with the drain electrode of VT5, and the collector electrode of VT4 is connected with the drain electrode of T6; The emitter of the emitter of VT2, the source electrode of VT5, VT4, the source electrode of VT6 are connected with dc bus negative pole-VDC;
Described driving circuit section comprises the driver element of driver element, VT2 and VT5 of driver element, the VT3 of VT1, and the driver element of VT4 and VT6;
The driver element of VT1 is made of isolation drive unit 1, resistance R 1, R2, voltage-stabiliser tube ZD1, isolation drive unit 1 input fetches the signal Wave1 from central processing unit, Wave1 is the power frequency component with synchronized, the output drive signal of isolation drive unit 1 is connected through the grid of series resistance R1 and VT1, and the output common port of isolation drive unit 1 and the emitter of VT1 are connected; The negative electrode of voltage-stabiliser tube ZD1 is connected with the grid of VT1, and the anode of voltage-stabiliser tube ZD1 is connected with the emitter of VT1, pull down resistor R2 and ZD1 parallel connection;
The driver element of VT3 is made of isolation drive unit 2, resistance R 3, R4, voltage-stabiliser tube ZD2, the input of isolation drive unit 2 fetches the signal Wave2 from central processing unit, Wave2 is the power frequency component with synchronized, the output drive signal of isolation drive unit 2 is connected through the grid of series resistance R3 and VT3, and the output common port of isolation drive unit 2 and the emitter of VT3 are connected; The negative electrode of voltage-stabiliser tube ZD2 is connected with the grid of VT3, and the anode of voltage-stabiliser tube ZD2 is connected with the emitter of VT3, pull down resistor R4 and ZD2 parallel connection;
The driver element of VT2 and VT5 is made of isolation drive unit 3, resistance R 5, R6, R7, R8, voltage-stabiliser tube ZD3, ZD4; The resistance of resistance R 5, R6 for 1m Ω to 99m Ω, the resistance of resistance R 6 is less than the resistance of resistance R 5; The input of isolation drive unit 3 fetches from the SPWM of central processing unit signal PWM1, the output drive signal of isolation drive unit 3 is connected through the grid of series resistance R5 and VT2, simultaneously, the output drive signal of isolation drive unit 3 is connected through the grid of series resistance R6 and VT5; The output common port of isolation drive the unit 3 and emitter of VT2 and the source electrode of VT5 is connected; The negative electrode of voltage-stabiliser tube ZD3 is connected with the grid of VT2, and the anode of voltage-stabiliser tube ZD3 is connected with the emitter of VT2, pull down resistor R7 and ZD3 parallel connection; The negative electrode of voltage-stabiliser tube ZD4 is connected with the grid of VT5, and the anode of voltage-stabiliser tube ZD4 is connected with the source electrode of VT5, pull down resistor R8 and ZD4 parallel connection;
The driver element of VT4 and VT6 is made of isolation drive unit 4, resistance R 9, R10, R11, R12, voltage-stabiliser tube ZD5, ZD6; The resistance of resistance R 9, R10 for 1m Ω to 99m Ω, wherein the resistance of resistance R 10 is less than the resistance of resistance R 9; The input of isolation drive unit 4 fetches from the SPWM of central processing unit signal PWM2; The output drive signal of isolation drive unit 4 is connected through the grid of series resistance R9 and VT4, and simultaneously, the output drive signal of isolation drive unit 4 is connected through the grid of series resistance R10 and VT6; The output common port of isolation drive the unit 4 and emitter of VT4 and the source electrode of VT6 is connected; The negative electrode of voltage-stabiliser tube ZD5 is connected with the grid of VT4, and the anode of voltage-stabiliser tube ZD5 is connected with the emitter of VT4, pull down resistor R11 and ZD5 parallel connection; The negative electrode of voltage-stabiliser tube ZD5 is connected with the grid of VT6, and the anode of voltage-stabiliser tube ZD5 is connected with the source electrode of VT6, pull down resistor R12 and ZD6 parallel connection.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201020684308 CN201956925U (en) | 2010-12-28 | 2010-12-28 | Inverter circuit for single-phase grid-connected inverter |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201020684308 CN201956925U (en) | 2010-12-28 | 2010-12-28 | Inverter circuit for single-phase grid-connected inverter |
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| CN201956925U true CN201956925U (en) | 2011-08-31 |
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| CN 201020684308 Expired - Fee Related CN201956925U (en) | 2010-12-28 | 2010-12-28 | Inverter circuit for single-phase grid-connected inverter |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102437765A (en) * | 2011-10-17 | 2012-05-02 | 华为技术有限公司 | Topological circuit of inverter and inversion method thereof, and inverter |
| CN102570780A (en) * | 2011-09-20 | 2012-07-11 | 广东美的电器股份有限公司 | Intelligent power module |
| CN103166615A (en) * | 2011-12-14 | 2013-06-19 | 三菱电机株式会社 | Power semiconductor device |
| WO2013159281A1 (en) * | 2012-04-24 | 2013-10-31 | General Electric Company | Differential gate resistor design for switching modules in power converter |
| CN103580455A (en) * | 2012-08-09 | 2014-02-12 | 青岛艾迪森科技有限公司 | Non-voltage switching system of high-power switching tube |
| CN104967349A (en) * | 2015-06-23 | 2015-10-07 | 四川蜀旺科技有限公司 | Circuit capable of reducing loss of switch transistor and driving schedule method |
| CN106357251A (en) * | 2015-07-17 | 2017-01-25 | 富士电机株式会社 | Semiconductor switching device |
| CN108736759A (en) * | 2018-08-30 | 2018-11-02 | 珠海格力电器股份有限公司 | A kind of inverter circuit, frequency converter, motor, compressor and air conditioner |
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2010
- 2010-12-28 CN CN 201020684308 patent/CN201956925U/en not_active Expired - Fee Related
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102570780A (en) * | 2011-09-20 | 2012-07-11 | 广东美的电器股份有限公司 | Intelligent power module |
| CN102437765B (en) * | 2011-10-17 | 2015-09-23 | 华为技术有限公司 | A kind of inverter topology circuit, inverse method and a kind of inverter |
| US8564973B2 (en) | 2011-10-17 | 2013-10-22 | Huawei Technologies Co., Ltd. | Inverter topology circuit, inversion method and inverter |
| CN102437765A (en) * | 2011-10-17 | 2012-05-02 | 华为技术有限公司 | Topological circuit of inverter and inversion method thereof, and inverter |
| WO2012163235A1 (en) * | 2011-10-17 | 2012-12-06 | 华为技术有限公司 | Inverter topology circuit, inversion method and inveter |
| US9106156B2 (en) | 2011-12-14 | 2015-08-11 | Mitsubishi Electric Corporation | Power semiconductor device |
| CN103166615A (en) * | 2011-12-14 | 2013-06-19 | 三菱电机株式会社 | Power semiconductor device |
| CN103166615B (en) * | 2011-12-14 | 2016-06-29 | 三菱电机株式会社 | Power semiconductor arrangement |
| WO2013159281A1 (en) * | 2012-04-24 | 2013-10-31 | General Electric Company | Differential gate resistor design for switching modules in power converter |
| CN103580455B (en) * | 2012-08-09 | 2015-12-16 | 青岛艾迪森科技有限公司 | High-power switch tube zero voltage switch system |
| CN103580455A (en) * | 2012-08-09 | 2014-02-12 | 青岛艾迪森科技有限公司 | Non-voltage switching system of high-power switching tube |
| CN104967349A (en) * | 2015-06-23 | 2015-10-07 | 四川蜀旺科技有限公司 | Circuit capable of reducing loss of switch transistor and driving schedule method |
| CN106357251A (en) * | 2015-07-17 | 2017-01-25 | 富士电机株式会社 | Semiconductor switching device |
| CN106357251B (en) * | 2015-07-17 | 2021-08-20 | 富士电机株式会社 | Semiconductor switch device |
| CN108736759A (en) * | 2018-08-30 | 2018-11-02 | 珠海格力电器股份有限公司 | A kind of inverter circuit, frequency converter, motor, compressor and air conditioner |
| CN108736759B (en) * | 2018-08-30 | 2019-11-15 | 珠海格力电器股份有限公司 | A kind of inverter circuit, frequency converter, motor, compressor and air conditioner |
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