CN102569145A - Method for correcting wafer position during quick annealing treatment - Google Patents
Method for correcting wafer position during quick annealing treatment Download PDFInfo
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- CN102569145A CN102569145A CN2010106031382A CN201010603138A CN102569145A CN 102569145 A CN102569145 A CN 102569145A CN 2010106031382 A CN2010106031382 A CN 2010106031382A CN 201010603138 A CN201010603138 A CN 201010603138A CN 102569145 A CN102569145 A CN 102569145A
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Abstract
The invention discloses a method for correcting a wafer position during quick annealing treatment, which adopts laser beams to respectively detect a first distance, a second distance, a third distance until an Nth distance which are between a first point and a second point along the radius directions of a first, a second, a third until an Nth control wafers, i is between 1-N/2, the absolute value of the difference of the ith distance and the i plus N/2 distance is respectively judged to be smaller or equal to a preset threshold D, if the absolute value of the difference is larger than the threshold D, an ith adjustment direction and an ith adjustment amount are determined, a mechanical arm is adjusted according to the determined adjustment direction and the adjustment amount, and the adjusted mechanical arm is adopted to put the product wafer on a ring at the outer edge in a chamber. By the adoption of the method disclosed by the invention, the correcting efficiency of the wafer position can be improved.
Description
Technical field
The present invention relates to field of semiconductor manufacture, wafer position bearing calibration during particularly a kind of short annealing is handled.
Background technology
Semiconductor fabrication process relates to short annealing and handles (RTP), for example, after ion injects, carries out RTP, injects the lattice damage that is brought to repair ion.Fig. 1 is the cross-sectional view of RTP device in the prior art.As shown in Figure 1, this device mainly comprises: chamber 101, heater 102, outer rim annulus (edgering) 103 and mechanical arm (scheming not shown).Wherein, Heater 102 all is positioned at chamber 101 inside with outer rim annulus 103, and heater 102 is used to provide high temperature heat source so that wafer W is heated, and outer rim annulus 103 is used for bearing wafer W; And outer rim annulus 103 externally rotates under the driving of parts (scheming not shown); Rotate thereby drive wafer W, mechanical arm is positioned at chamber 101 outsides, when beginning to carry out RTP, stretches into chamber 101 inside; And wafer W is positioned on the outer rim annulus 103 in the chamber 101, mechanical arm stretches out chamber 101 more then.
Need to prove that the RTP device possibly also comprise other parts in the prior art, because other parts and the present invention are irrelevant, so detail no longer one by one.
Shown in the last figure among Fig. 1, in the ideal case, the wafer W of being placed is positioned at the center of outer rim annulus 103, that is to say, in arbitrary section, the axis L1 of outer rim annulus 103 overlaps with the axis L2 of wafer W.Yet in practical application, mechanical arm is difficult to accurately wafer W is placed on just the center of outer rim annulus 103, that is to say, in a section, the axis L1 of outer rim annulus 103 does not overlap with the axis L2 of wafer W at least.Shown in the figure below among Fig. 1, in diagrammatic cross section, wafer W is compared with ideal position skew has been taken place to the right, and the axis L1 of outer rim annulus 103 does not overlap with the axis L2 of wafer W.
Shown in the last figure among Fig. 1; In the time of on wafer W is placed on outer rim annulus 103; Submarginal part contacts with outer rim annulus 103 in the bottom of wafer W, and other parts of the bottom of wafer W are exposed in the air (also possibly be other gas that is used for annealing in process, for example nitrogen); Usually the main component of outer rim annulus 103 is a carbon; Carbon has higher thermal conductivity than air, if heater 102 all provides identical heat energy above entire wafer W, then the temperature at wafer W edge must be lower than the middle temperature of wafer.In practical application, heater 102 has temperature compensation function usually, specifically; Heater 102 is that the center with outer rim annulus 103 is that symmetrical centre is carried out temperature-compensating; For example, heater 102 will provide less heat energy in the zone near outer rim annulus 103 centers, and heater 102 will provide bigger heat energy in the neighboring area of outer rim annulus 103; Compensate with this temperature, make entire wafer W be heated evenly the wafer W edge.In addition; Even the heater that uses in the practical application 102 does not have temperature compensation function, identical heat energy can only all be provided above entire wafer W; Can not make any semiconductor device in the wafer W marginal portion, guarantee that the zone of holding semiconductor device is heated evenly.It is thus clear that, adopt RTP device of the prior art, as long as wafer W is positioned over ideal position (being that the center of wafer W and the center of outer rim annulus 103 overlap), can make that being heated of wafer W is even.
Yet; Shown in the figure below among Fig. 1; When wafer W is compared with ideal position when skew having taken place to the right, the zone, the right of wafer W has bigger contact area with outer rim annulus 103, and the left area of wafer W and outer rim annulus 103 have smaller contact area; Then the mean temperature in wafer W the right zone is lower than the temperature of wafer W left area, makes the wafer W inequality of being heated.Even heater 102 has temperature compensation function, be that symmetrical centre is carried out temperature-compensating because heater 102 is centers with outer rim annulus 103, the uneven phenomenon of being heated still can appear in wafer W.
It is thus clear that; When wafer W is compared the generation skew with ideal position; Then can cause the wafer W inequality of being heated, the inequality of being heated can cause same wafers to have different performances in the different zone of temperature, in actual production process; Need proofread and correct the position of wafer W, make wafer W be adjusted to ideal position.
In the prior art, adopt following method that the position of wafer W is proofreaied and correct usually.
Step 1 adopts mechanical arm will control sheet and is positioned on the inner outer rim annulus 103 of chamber 101, carries out RTP to controlling sheet then.
Step 2 after RTP finishes, adopts 4 probe techniques evenly to choose a plurality of points on control sheet surface, to measure the resistance value Rs at each some place.
Step 3, owing to have certain linear between resistance value Rs and the temperature value, for example; When resistance value Rs equaled a, temperature value was b, and when resistance value Rs equals 10a; Temperature value is 10b; Therefore, can calculate the pairing temperature value of every bit in selected a plurality of points according to known in advance linear relationship.
Step 4 is if the absolute value of difference that is positioned at 2 temperature on a certain diameter then is regarded as controlling sheet and along this diametric(al) skew has taken place greater than 3 ℃.Shown in figure below of Fig. 1, compare with ideal position skew has taken place to the right if the difference of the temperature value that P temperature of ordering and Q are ordered greater than 3 ℃, then is regarded as controlling sheet.
Step 5 according to the determined offset direction of step 4, is adjusted mechanical arm, for example, if discovery control sheet is compared with ideal position skew has taken place to the right, then mechanical arm is adjusted, and makes mechanical arm squint slightly left.
After the mechanical arm adjustment finishes; Choose a control sheet again, and then return execution in step one, in a plurality of points selected on the control sheet; Temperature difference between any 2 is all smaller or equal to 3 ℃; Then be regarded as controlling sheet and be positioned at ideal position, the center of promptly controlling center and the outer rim annulus of sheet overlaps, but execution in step six then.
Step 6 adopts adjusted mechanical arm that the product wafer is positioned on the outer rim annulus 103 of chamber 101 inside, then the product wafer is carried out RTP.
Because mechanical arm is adjusted before, therefore, adjusted mechanical arm can guarantee that the product wafer is placed on ideal position.
So far, this flow process finishes.
Thus it is clear that, in the prior art, need in advance the control sheet to be carried out RTP; On the control sheet, choose the resistance that a plurality of points detect every bit then, thereby detect the direction that skew takes place the control sheet, the direction of skew takes place in the mechanical arm of promptly placing the control sheet; But; The method of prior art can only detect the control sheet and with respect to past which direction of ideal position skew take place, and can't detect side-play amount and what be actually, so in the prior art direction adjustment of trial property repeatedly of skew can only take place according to current control sheet; It is long to expend time in, and has reduced the correction efficient of wafer position.
Summary of the invention
In view of this, the present invention provides wafer position bearing calibration in a kind of short annealing processing, can improve the correction efficient of wafer position.
For solving the problems of the technologies described above, technical scheme of the present invention is achieved in that
Wafer position bearing calibration during a kind of short annealing is handled; This method is applied in the short annealing processing unit; This device comprises: chamber, heater, outer rim annulus and mechanical arm wherein, are positioned at the outside mechanical arm of chamber and are used for control sheet or product wafer are positioned on the outer rim annulus of chamber; The outer rim annulus is used for carrying control sheet or product wafer and driving its rotation; The inward flange line of outward flange annulus by the control of being placed sheet or product wafer cover, outer edge line comes out, the heater that is positioned at chamber interior is used to provide high temperature heat source, this method comprises:
A, adopt mechanical arm will control on the outer rim annulus that sheet is positioned over chamber interior, the control sheet rotates under the drive of outer rim annulus, adopts heater to heat controlling sheet then;
B, control sheet radius are made the 1st point with the intersection point note of control sheet edge line; The intersection point note of the outer edge line of radius extended line and outer rim annulus is made the 2nd point; Select arbitrary radius as the 1st radius, along the rightabout of control sheet rotation, select successively with the 1st radius at interval a degree the 2nd radius, at interval the a*2 degree the 3rd radius, until the N radius of interval a* (N-1) degree; Adopt that laser beam is surveyed respectively along the 1st, 2,3, the 1st distance until between the 1st and the 2nd of N radial direction, the 2nd distance, the 3rd distance, until the N distance; Wherein, N is the even number more than or equal to 4, and a equals the merchant of 360 degree and N;
C, the initial value that variable i is set are 1, and whether the absolute value of judging i distance and the difference of i+N/2 distance is smaller or equal to the threshold value D that is provided with in advance, if judged result is for being then direct execution in step D; Otherwise; If the i distance is greater than the i+N/2 distance; Confirm that then i adjustment direction be along the outer edge line of i radius towards the outer rim annulus, the i adjustment amount is difference half the of i distance and i+N/2 distance, if i is apart from less than the i+N/2 distance; Confirm that then i adjustment direction be along the outer edge line of i+N/2 radius towards the outer rim annulus, the i adjustment amount is half of difference of i+N/2 distance and i distance;
The value of D, i adds up 1, with the value of the i after adding up as the i after upgrading, if the i after upgrading then returns execution in step C smaller or equal to N/2; Otherwise, direct execution in step E;
E, according to said definite the 1st adjustment amount, the 2nd adjustment amount, multinomial arbitrarily in the N/2 adjustment amount; And the 1st adjustment direction, the 2nd adjustment direction, any multinomial in N/2 adjustment direction are adjusted mechanical arm; Adopt adjusted mechanical arm the product wafer to be positioned on the outer rim annulus of chamber interior; The product wafer rotates under the drive of outer rim annulus, adopts heater that the product wafer is heated then.
The method of the 1st distance between the 1st and the 2nd of the said employing detecting laser beam of step B edge the 1st radial direction comprises:
Adopt generating laser to the 1st radius region emission of lasering beam;
Laser detector is positioned at and the parallel same plane of control sheet with generating laser; Laser detector receives folded light beam and from the folded light beam that is received, detects the 1st reflection ray that forms at the 1st point reflection and the 2nd reverberation that forms at the 2nd point reflection; Wherein, The subpoint of the 1st reflection ray on laser detector is the 1st subpoint, and the subpoint of second reflection ray on laser detector is the 2nd subpoint;
With half of the distance between the 1st subpoint and the 2nd subpoint as the 1st distance;
The method of the 1st distance between the 1st and the 2nd of the said employing detecting laser beam of step B edge the 2nd radial direction comprises:
Adopt generating laser to the 2nd radius region emission of lasering beam;
Laser detector is positioned at and the parallel same plane of control sheet with generating laser; Laser detector receives folded light beam and from the folded light beam that is received, detects the 1st reflection ray that forms at the 1st point reflection and the 2nd reverberation that forms at the 2nd point reflection; Wherein, The subpoint of the 1st reflection ray on laser detector is the 1st subpoint, and the subpoint of second reflection ray on laser detector is the 2nd subpoint;
With half of the distance between the 1st subpoint and the 2nd subpoint as the 2nd distance;
According to the method described above, the 1st distance between the 1st and the 2nd that surveys along the N radial direction, wherein, the said employing detecting laser beam of step B comprises along the method for the 1st distance between the 1st and the 2nd of N radial direction:
Adopt generating laser to N radius region emission of lasering beam;
Laser detector is positioned at and the parallel same plane of control sheet with generating laser; Laser detector receives folded light beam and from the folded light beam that is received, detects the 1st reflection ray that forms at the 1st point reflection and the 2nd reverberation that forms at the 2nd point reflection; Wherein, The subpoint of the 1st reflection ray on laser detector is the 1st subpoint, and the subpoint of second reflection ray on laser detector is the 2nd subpoint;
With half of the distance between the 1st subpoint and the 2nd subpoint as the N distance.
Said threshold value D equals the arbitrary numerical value in 0.01 millimeter to 1 millimeter.
Said N is more than or equal to 50.
According to technical scheme provided by the present invention; Adopt that laser beam is surveyed along the 1st, 2 respectively, the 1st distance, the 2nd distance, the 3rd distance between the 1st and the 2nd of 3...N control sheet radial direction ... the N distance; I is taken to N/2 from 1, and whether the absolute value of judging i distance and the difference of i+N/2 distance respectively is smaller or equal to the threshold value D that is provided with in advance, if greater than threshold value D; Then confirm i adjustment direction and i adjustment amount; According to determined adjustment direction and adjustment amount mechanical arm is adjusted, adopted adjusted mechanical arm the product wafer to be positioned on the outer rim annulus of chamber interior, guarantee that the product wafer is placed in ideal position.It is thus clear that the present invention has confirmed that not only adjustment amount also confirmed the adjustment direction, can adjust accurately wafer according to adjustment amount and adjustment direction, the adjustment that need not to make repeated attempts has improved the correction efficient of wafer position.
Description of drawings
Fig. 1 is the cross-sectional view of RTP device in the prior art.
Fig. 2 is the flow chart of wafer position bearing calibration during a kind of short annealing provided by the present invention is handled.
Fig. 3 is the detection principle sketch map of laser beam.
Embodiment
For making the object of the invention, technical scheme and advantage clearer, below with reference to the accompanying drawing embodiment that develops simultaneously, scheme according to the invention is done to specify further.
Core concept of the present invention is: adopt that laser beam is surveyed along the 1st, 2 respectively, the 1st distance, the 2nd distance, the 3rd distance between the 1st and the 2nd of 3...N control sheet radial direction ... the N distance; I is taken to N/2 from 1; Whether the absolute value of difference of judging i distance and i+N/2 distance respectively is smaller or equal to the threshold value D that is provided with in advance; If greater than threshold value D, then confirm i adjustment direction and i adjustment amount, according to determined adjustment direction and adjustment amount mechanical arm is adjusted; Adopt adjusted mechanical arm the product wafer to be positioned on the outer rim annulus of chamber interior, guarantee that the product wafer is placed in ideal position.
The present invention is applied in the RTP device of the prior art, and as shown in Figure 1, this device mainly comprises: chamber 101, heater 102, outer rim annulus 103 and mechanical arm (scheming not shown).Being positioned at chamber 101 outside mechanical arms is used for control sheet or product wafer are positioned on the outer rim annulus 103 of chamber 101; Outer rim annulus 103 is used for carrying control sheet or product wafer and driving its rotation; The inward flange line of outward flange annulus 103 by the control of being placed sheet or product wafer cover, outer edge line comes out, be positioned at chamber 101 inner heaters 102 and be used to provide high temperature heat source.
Fig. 2 is the flow chart of wafer position bearing calibration during a kind of short annealing provided by the present invention is handled.As shown in Figure 2, this method comprises:
So far, this flow process finishes.
Through an embodiment the present invention is described in detail below.
In this embodiment, N gets 4, and this embodiment comprises the steps:
Step 201 adopts mechanical arm will control sheet K and is positioned on the inner outer rim annulus 103 of chamber 101, and control sheet K rotates under the drive of outer rim annulus 103, adopts 102 pairs of heaters to control sheet K then and heats.
This step is identical with prior art, no longer details here.
Step 202; The radius of control sheet K is made the 1st point with the intersection point note of control sheet K edge line; The intersection point note of the outer edge line of radius extended line and outer rim annulus 103 is made the 2nd point; Select arbitrary radius as the 1st radius, the rightabout that edge control sheet K rotates is selected and the 2nd radius of the 1st radius interval 90 degree, the 3rd radius of interval 180 degree successively; The 4th radius of 270 degree at interval adopts laser beam to survey the 1st distance, the 2nd distance, the 3rd distance and the 4th distance between the 1st and the 2nd along the 1st, 2,3,3 radial directions respectively.
In the prior art, adopt the detecting laser beam distance to be widely used, the mode of above-mentioned detection range can be with reference to method of the prior art.The present invention only proposes a kind of detecting laser beam method as preferred embodiment, and Fig. 3 is the detection principle sketch map of laser beam, below in conjunction with Fig. 1 and Fig. 3 the said detection method of this step is described in detail.
The center of control sheet K is O, selects arbitrary radius OC1 as the 1st radius, and the C1 of edge the 1st radial direction is the 1st point, and the D1 of edge the 1st radial direction is the 2nd point, and C1D1 is the 1st distance.(diagram control sheet K direction of rotation is counterclockwise to the rightabout that rotates along control sheet K; The rightabout of then controlling sheet K rotation is a clockwise direction); Select successively and the 1st radius the 2nd radius OC2, the 3rd radius OC3 of 180 degree at interval of 90 degree at interval, the 4th radius OC4 of 270 degree at interval, then the 2nd distance is C2D2; The 3rd distance is C3D3, and the 4th distance is C4D4.
Then C1D1, C2D2, C3D3 and C4D4 are the detection of a target, are that example describes with the detection process of C1D1 only below, and C2D2, C3D3 and C4D4 are identical with the detection process of C1D1, and detection process comprises:
The first, adopt generating laser to the 1st radius OC1 region emission of lasering beam, for example, generating laser is arranged in the O1 place of Fig. 3.
Second; Laser detector 301 is positioned at the parallel same plane with control sheet K with generating laser; As shown in Figure 3, laser detector 301 is positioned at plane M with generating laser, and plane M is parallel with control sheet K; Laser detector 301 is used for receiving folded light beam and detects the 1st reflection ray C1A1 that forms at the 1st C1 point reflection from the folded light beam that is received, and the 2nd reflection ray D1B1 that forms at the 2nd D1 point reflection.
Wherein, the subpoint of the 1st reflection ray C1A1 on laser detector 301 is the 1st subpoint A1, and the subpoint of the second reflection ray D1B1 on laser detector 301 is the 2nd subpoint B1.
Laser detector and generating laser are laser detection parts commonly used in the prior art, no longer describe in detail here.
In addition, need to prove why laser detector can detect C1A1, D1B1 from folded light beam; Be because C1, D1 be the transition point of reflectivity, the difference of laser detector through reflectivity is with definite reflection ray from the reflectivity transition point, specifically; OC1 is positioned on the control sheet K, and the last each point of OC1 has identical reflectivity, and C1D1 is positioned on the outer rim annulus 103; The last each point of C1D1 has identical reflectivity; And be different from the reflectivity that OC1 goes up each point, and the outside that D1 is ordered is air (also possibly be other gases that are used for annealing in process, for example nitrogen).
The 3rd, with half of the distance A 1B1 between the 1st subpoint A1 and the 2nd subpoint B1 as the 1st distance C 1D1.
As shown in Figure 3, according to reflection law, and O1, A1, B1 is positioned at and control sheet K parallel same plane M, then can know: O1D1=D1B1, O1C1=C1A1.Suppose that the B2 point is the symmetric points of B1 point with respect to control sheet K, the A2 point is the symmetric points of A1 point with respect to control sheet K, and then B2 must be positioned on the extended line of O1D1, and A2 must be positioned on the extended line of O1C1, and D1B1=D1B2, C1A1=C1A2, A1B1=A2B2.
Can know by above-mentioned analytic process, in triangle O1A2B2, O1D1=D1B2, O1C1=C1A2, so C1D1 equals the half the of A1B1.
In practical application; Because control sheet K is symmetrical with respect to center O; Therefore, if laser detector 301 can detect the 1st distance C 1D1 with generating laser, then control sheet K according to counter clockwise direction shown in Figure 3 revolve turn 90 degrees after; Laser detector 301 can detect the 2nd distance C 2D2 with generating laser; Control sheet K according to counter clockwise direction shown in Figure 3 revolve again turn 90 degrees after, laser detector 301 can detect the 3rd distance C 3D3 with generating laser, control sheet K according to counter clockwise direction shown in Figure 3 revolve again turn 90 degrees after; Laser detector 301 can detect the 4th distance C 4D4 with generating laser, and the method for surveying the 2nd, 3,4 distances is identical with the method for above-mentioned detection the 1st distance.
Whether step 203, the absolute value of judging the 1st distance and the difference of the 3rd distance smaller or equal to the threshold value D that is provided with in advance, if, direct execution in step 204 then; Otherwise; If the 1st distance is greater than the 3rd distance; Confirm that then the 1st adjustment direction be along the outer edge line of the 1st radius towards outer rim annulus 103, the 1st adjustment amount is difference half the of the 1st distance and the 3rd distance, if the 1st apart from less than the 3rd distance; Confirm that then the 1st adjustment direction be along the outer edge line of the 3rd radius towards outer rim annulus 103, the 1st adjustment amount is half of difference of the 3rd distance and the 1st distance.
Preferably, threshold value D equals the arbitrary numerical value in 0.01 millimeter to 1 millimeter.
If the absolute value of the difference of the 1st distance C 1D1 and the 3rd distance C 3D3 is less than or equal to threshold value D, then need not along the position of straight line C1C3 direction adjustment control sheet K.
If the absolute value of the difference of the 1st distance C 1D1 and the 3rd distance C 3D3 is greater than threshold value D; Judge that more whether the 1st distance C 1D1 is greater than the 3rd distance C 3D3; Sheet K moves towards the outer edge line of outer rim annulus 103 along OC1 if the 1st distance C 1D1, then should make control greater than the 3rd distance C 3D3, and the distance that moves is difference half the of the 1st distance C 1D1 and the 3rd distance C 3D3; Then, execution in step 204 again.On the contrary, sheet K moves towards the outer edge line of outer rim annulus 103 along OC3 if the 1st distance C 1D1, then should make control less than the 3rd distance C 3D3, and the distance that moves is difference half the of the 3rd distance C 3D3 and the 1st distance C 1D1, and then, execution in step 204 again.
Whether step 204, the absolute value of judging the 2nd distance and the difference of the 4th distance smaller or equal to the threshold value D that is provided with in advance, if, direct execution in step 205 then; Otherwise; If the 2nd distance is greater than the 4th distance; Confirm that then the 2nd adjustment direction be along the outer edge line of the 2nd radius towards outer rim annulus 103, the 2nd adjustment amount is difference half the of the 2nd distance and the 4th distance, if the 2nd apart from less than the 4th distance; Confirm that then the 2nd adjustment direction be along the outer edge line of the 4th radius towards outer rim annulus 103, the 2nd adjustment amount is half of difference of the 4th distance and the 2nd distance.
Preferably, threshold value D equals 0.03 millimeter.
If the absolute value of the difference of the 2nd distance C 2D2 and the 4th distance C 3D3 is less than or equal to threshold value D, then need not along the position of straight line C2C4 direction adjustment control sheet K.
If the absolute value of the difference of the 2nd distance C 2D2 and the 4th distance C 4D4 is greater than threshold value D; Judge that more whether the 2nd distance C 21D2 is greater than the 4th distance C 4D4; Sheet K moves towards the outer edge line of outer rim annulus 103 along OC2 if the 2nd distance C 2D2, then should make control greater than the 4th distance C 4D4, and the distance that moves is difference half the of the 2nd distance C 2D2 and the 4th distance C 4D4; Then, execution in step 205 again.On the contrary, sheet K moves towards the outer edge line of outer rim annulus 103 along OC4 if the 2nd distance C 2D2, then should make control less than the 4th distance C 4D4, and the distance that moves is difference half the of the 4th distance C 4D4 and the 2nd distance C 2D2, and then, execution in step 205 again.
Step 205; According to said the 1st definite adjustment amount, the 1st adjustment direction, the 2nd adjustment amount and/or the 2nd adjustment direction; Mechanical arm is adjusted; Adopt adjusted mechanical arm that the product wafer is positioned on the outer rim annulus 103 of chamber 101 inside, the product wafer rotates under the drive of outer rim annulus 103, adopts 102 pairs of product wafers of heater to heat then.
The method of mechanical arm being adjusted according to determined adjustment amount and adjustment direction is the content of prior art, will not give unnecessary details here.
After mechanical arm adjustment is finished, adopt adjusted mechanical arm to place the product wafer and can guarantee that the product wafer is placed on ideal position, avoided the product wafer uneven situation of being heated.
In addition, in the above-described embodiments, be that example describes only to survey the distance of the 1st, 2,3,4 on the 1st, 2,3,4 radiuses; In practical application, on the control sheet, select four radiuses at least, and the interval of every adjacent two radiuses all is 90 degree; Therefore the minimum value of N is 4, and the minimum value of a is 90.
In practical application, the rotating speed of control sheet was generally for 4 circle/seconds, preferably; Look-in frequency is at least 200 hertz, that is to say, when the control sheet revolves when turning around; At least survey 50 times, promptly N is more than or equal to 50, and the interval of selected every adjacent two radiuses at least all is a=306 degree/50=7.2 degree.
Certainly, unqualified for the maximum of N, the value of N is big more, and it is high more then to adjust precision.
So far, this flow process finishes.
Visible by above-mentioned technical scheme; The present invention adopts that laser beam is surveyed along the 1st, 2 respectively, the 1st distance, the 2nd distance, the 3rd distance between the 1st and the 2nd of 3...N control sheet radial direction ... the N distance; I is taken to N/2 from 1, and whether the absolute value of judging i distance and the difference of i+N/2 distance respectively is smaller or equal to the threshold value D that is provided with in advance, if greater than threshold value D; Then confirm i adjustment direction and i adjustment amount; According to determined adjustment direction and adjustment amount mechanical arm is adjusted, adopted adjusted mechanical arm the product wafer to be positioned on the outer rim annulus of chamber interior, guarantee that the product wafer is placed in ideal position.It is thus clear that the present invention has confirmed that not only adjustment amount also confirmed the adjustment direction, can adjust accurately wafer according to adjustment amount and adjustment direction, the adjustment that need not to make repeated attempts has improved the correction efficient of wafer position.
The above is merely preferred embodiment of the present invention, is not to be used to limit protection scope of the present invention.All within spirit of the present invention and principle, any modification of being done, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (4)
1. wafer position bearing calibration during a short annealing is handled; This method is applied in the short annealing processing unit, and this device comprises: chamber, heater, outer rim annulus and mechanical arm, wherein; Being positioned at the outside mechanical arm of chamber is used for control sheet or product wafer are positioned on the outer rim annulus of chamber; The outer rim annulus is used for carrying control sheet or product wafer and drives its rotation, the inward flange line of outward flange annulus by the control of being placed sheet or product wafer cover, outer edge line comes out, the heater that is positioned at chamber interior is used to provide high temperature heat source; It is characterized in that this method comprises:
A, adopt mechanical arm will control on the outer rim annulus that sheet is positioned over chamber interior, the control sheet rotates under the drive of outer rim annulus, adopts heater to heat controlling sheet then;
B, control sheet radius are made the 1st point with the intersection point note of control sheet edge line; The intersection point note of the outer edge line of radius extended line and outer rim annulus is made the 2nd point; Select arbitrary radius as the 1st radius, along the rightabout of control sheet rotation, select successively with the 1st radius at interval a degree the 2nd radius, at interval the a*2 degree the 3rd radius, until the N radius of interval a* (N-1) degree; Adopt that laser beam is surveyed respectively along the 1st, 2,3, the 1st distance until between the 1st and the 2nd of N radial direction, the 2nd distance, the 3rd distance, until the N distance; Wherein, N is the even number more than or equal to 4, and a equals the merchant of 360 degree and N;
C, the initial value that variable i is set are 1, and whether the absolute value of judging i distance and the difference of i+N/2 distance is smaller or equal to the threshold value D that is provided with in advance, if judged result is for being then direct execution in step D; Otherwise; If the i distance is greater than the i+N/2 distance; Confirm that then i adjustment direction be along the outer edge line of i radius towards the outer rim annulus, the i adjustment amount is difference half the of i distance and i+N/2 distance, if i is apart from less than the i+N/2 distance; Confirm that then i adjustment direction be along the outer edge line of i+N/2 radius towards the outer rim annulus, the i adjustment amount is half of difference of i+N/2 distance and i distance;
The value of D, i adds up 1, with the value of the i after adding up as the i after upgrading, if the i after upgrading then returns execution in step C smaller or equal to N/2; Otherwise, direct execution in step E;
E, according to said definite the 1st adjustment amount, the 2nd adjustment amount, multinomial arbitrarily in the N/2 adjustment amount; And the 1st adjustment direction, the 2nd adjustment direction, any multinomial in N/2 adjustment direction are adjusted mechanical arm; Adopt adjusted mechanical arm the product wafer to be positioned on the outer rim annulus of chamber interior; The product wafer rotates under the drive of outer rim annulus, adopts heater that the product wafer is heated then.
2. method according to claim 1 is characterized in that,
The method of the 1st distance between the 1st and the 2nd of the said employing detecting laser beam of step B edge the 1st radial direction comprises:
Adopt generating laser to the 1st radius region emission of lasering beam;
Laser detector is positioned at and the parallel same plane of control sheet with generating laser; Laser detector receives folded light beam and from the folded light beam that is received, detects the 1st reflection ray that forms at the 1st point reflection and the 2nd reverberation that forms at the 2nd point reflection; Wherein, The subpoint of the 1st reflection ray on laser detector is the 1st subpoint, and the subpoint of second reflection ray on laser detector is the 2nd subpoint;
With half of the distance between the 1st subpoint and the 2nd subpoint as the 1st distance;
The method of the 1st distance between the 1st and the 2nd of the said employing detecting laser beam of step B edge the 2nd radial direction comprises:
Adopt generating laser to the 2nd radius region emission of lasering beam;
Laser detector is positioned at and the parallel same plane of control sheet with generating laser; Laser detector receives folded light beam and from the folded light beam that is received, detects the 1st reflection ray that forms at the 1st point reflection and the 2nd reverberation that forms at the 2nd point reflection; Wherein, The subpoint of the 1st reflection ray on laser detector is the 1st subpoint, and the subpoint of second reflection ray on laser detector is the 2nd subpoint;
With half of the distance between the 1st subpoint and the 2nd subpoint as the 2nd distance;
According to the method described above, the 1st distance between the 1st and the 2nd that surveys along the N radial direction, wherein, the said employing detecting laser beam of step B comprises along the method for the 1st distance between the 1st and the 2nd of N radial direction:
Adopt generating laser to N radius region emission of lasering beam;
Laser detector is positioned at and the parallel same plane of control sheet with generating laser; Laser detector receives folded light beam and from the folded light beam that is received, detects the 1st reflection ray that forms at the 1st point reflection and the 2nd reverberation that forms at the 2nd point reflection; Wherein, The subpoint of the 1st reflection ray on laser detector is the 1st subpoint, and the subpoint of second reflection ray on laser detector is the 2nd subpoint;
With half of the distance between the 1st subpoint and the 2nd subpoint as the N distance.
3. method according to claim 2 is characterized in that, said threshold value D equals the arbitrary numerical value in 0.01 millimeter to 1 millimeter.
4. method according to claim 3 is characterized in that said N is more than or equal to 50.
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| CN112614780A (en) * | 2020-12-16 | 2021-04-06 | 上海华力微电子有限公司 | Wafer spike annealing monitoring method |
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| CN101127317A (en) * | 2007-09-18 | 2008-02-20 | 深圳市矽电半导体设备有限公司 | Positioning device and positioning method for wafer sheet |
| US20100280790A1 (en) * | 2007-12-27 | 2010-11-04 | Matt Rodnick | Systems and methods for calibrating end effector alignment using at least a light source |
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| CN1420978A (en) * | 1999-08-12 | 2003-05-28 | Asml美国公司 | Hot wall rapid thermal processor |
| CN2717014Y (en) * | 2004-04-01 | 2005-08-10 | 上海宏力半导体制造有限公司 | Silicon slice holder correcting tool of semiconductor thermal technology |
| CN101127317A (en) * | 2007-09-18 | 2008-02-20 | 深圳市矽电半导体设备有限公司 | Positioning device and positioning method for wafer sheet |
| US20100280790A1 (en) * | 2007-12-27 | 2010-11-04 | Matt Rodnick | Systems and methods for calibrating end effector alignment using at least a light source |
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