CN102569145B - Method for correcting wafer position during quick annealing treatment - Google Patents
Method for correcting wafer position during quick annealing treatment Download PDFInfo
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- CN102569145B CN102569145B CN201010603138.2A CN201010603138A CN102569145B CN 102569145 B CN102569145 B CN 102569145B CN 201010603138 A CN201010603138 A CN 201010603138A CN 102569145 B CN102569145 B CN 102569145B
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Abstract
The invention discloses a method for correcting a wafer position during quick annealing treatment, which adopts laser beams to respectively detect a first distance, a second distance, a third distance until an Nth distance which are between a first point and a second point along the radius directions of a first, a second, a third until an Nth control wafers, i is between 1-N/2, the absolute value of the difference of the ith distance and the i plus N/2 distance is respectively judged to be smaller or equal to a preset threshold D, if the absolute value of the difference is larger than the threshold D, an ith adjustment direction and an ith adjustment amount are determined, a mechanical arm is adjusted according to the determined adjustment direction and the adjustment amount, and the adjusted mechanical arm is adopted to put the product wafer on a ring at the outer edge in a chamber. By the adoption of the method disclosed by the invention, the correcting efficiency of the wafer position can be improved.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly a kind of method for correcting wafer position during quick annealing treatment.
Background technology
Semiconductor fabrication process relates to short annealing and processes (RTP), for example, carries out RTP, the lattice damage being brought to repair Implantation after Implantation.Fig. 1 is the cross-sectional view of RTP device in prior art.As shown in Figure 1, this device mainly comprises: chamber 101, heater 102, outer rim annulus (edgering) 103 and mechanical arm (scheming not shown).Wherein, heater 102 and outer rim annulus 103 are all positioned at chamber 101 inside, heater 102 is for providing high temperature heat source so that wafer W is heated, outer rim annulus 103 is for bearing wafer W, and outer rim annulus 103 externally rotates under the driving of parts (scheming not shown), thereby drive wafer W to rotate, mechanical arm is positioned at chamber 101 outsides, when starting to carry out RTP, stretch into chamber 101 inside, and wafer W is positioned on the outer rim annulus 103 in chamber 101, then mechanical arm stretches out chamber 101 again.
It should be noted that, in prior art, RTP device may also comprise other parts, because other parts are unrelated to the invention, therefore describe in detail no longer one by one.
As shown in the upper figure in Fig. 1, in the ideal case, the wafer W of placing is positioned at outer rim annulus 103 center, that is to say, in arbitrary section, the axis L1 of outer rim annulus 103 overlaps with the axis L2 of wafer W.Yet in actual applications, mechanical arm is difficult to accurately wafer W is placed on just outer rim annulus 103 center, that is to say, at least, in a section, the axis L1 of outer rim annulus 103 does not overlap with the axis L2 of wafer W.As shown in the figure below in Fig. 1, in diagrammatic cross section, wafer W is compared skew has been occurred to the right with ideal position, and the axis L1 of outer rim annulus 103 does not overlap with the axis L2 of wafer W.
As shown in the upper figure in Fig. 1, in the time of on wafer W is placed on outer rim annulus 103, in the bottom of wafer W, submarginal part contacts with outer rim annulus 103, it (may be also that other are for the gas of annealing in process that other parts of the bottom of wafer W are exposed to air, for example, nitrogen), conventionally the main component of outer rim annulus 103 is carbon, carbon has higher thermal conductivity than air, if heater 102 all provides identical heat energy above whole wafer W, the temperature at wafer W edge is inevitable lower than the temperature in the middle of wafer.In actual applications, heater 102 has temperature compensation function conventionally, specifically, heater 102 is to take outer rim annulus 103 center to carry out temperature-compensating as symmetrical centre, for example, heater 102 will provide less heat energy in the region near outer rim annulus 103 centers, and heater 102 will provide larger heat energy in the neighboring area of outer rim annulus 103, temperature with this to wafer W edge compensates, and whole wafer W is heated evenly.In addition, even if the heater using in practical application 102 does not have temperature compensation function, identical heat energy can only be all provided above whole wafer W, in wafer W marginal portion, can not make any semiconductor device, guarantee that the region of holding semiconductor device is heated evenly.Visible, adopt RTP device of the prior art, as long as wafer W is positioned over to ideal position (being the center of wafer W and the center superposition of outer rim annulus 103), can make being heated evenly of wafer W.
Yet, as shown in the figure below in Fig. 1, when wafer W is compared with ideal position while there is skew to the right, region, the right and the outer rim annulus 103 of wafer W have larger contact area, the left area of wafer W and outer rim annulus 103 have smaller contact area, the mean temperature in region, wafer W the right is lower than the temperature of wafer W left area, makes the wafer W inequality of being heated.Even if heater 102 has temperature compensation function, due to heater 102, take outer rim annulus 103 center and carry out temperature-compensating as symmetrical centre, wafer W still there will be the uneven phenomenon of being heated.
Visible, when wafer W is compared generation skew with ideal position, can cause the wafer W inequality of being heated, the inequality of being heated can cause same wafer to have different performances in the different region of temperature, in actual production process, need to proofread and correct the position of wafer W, make wafer W be adjusted to ideal position.
In the prior art, conventionally adopt following methods to proofread and correct the position of wafer W.
Step 1, adopts mechanical arm that control wafer is positioned on the outer rim annulus 103 of chamber 101 inside, then control wafer is carried out to RTP.
Step 2, after RTP finishes, adopts 4 probe techniques to choose a plurality of points at control wafer surface uniform, to measure the resistance value Rs at each some place.
Step 3, owing to thering is certain linear relationship between resistance value Rs and temperature value, for example, when resistance value Rs equals a, temperature value is b, and when resistance value Rs equals 10a, temperature value is 10b, therefore, can, according to known in advance linear relationship, calculate the corresponding temperature value of every bit in selected a plurality of points.
Step 4, is greater than 3 ℃ if be positioned at the absolute value of the difference of the temperature of 2 on a certain diameter, is considered as control wafer, along this diametric(al), skew has occurred.As shown in figure below of Fig. 1, if the difference of the temperature value that the temperature that P is ordered and Q are ordered is greater than 3 ℃, is considered as control wafer and compares skew has occurred to the right with ideal position.
Step 5, according to the determined offset direction of step 4, adjusts mechanical arm, for example, if discovery control wafer is compared skew has been occurred to the right with ideal position, mechanical arm is adjusted, and makes mechanical arm slightly skew left.
After mechanical arm is adjusted, choose again a control wafer, and then return execution step one, until in control wafer in selected a plurality of points, temperature difference between any two points is all less than or equal to 3 ℃, be considered as control wafer and be positioned at ideal position, the center superposition of the center of control wafer and outer rim annulus, then can perform step six.
Step 6, adopts the mechanical arm after adjusting that product wafer is positioned on the outer rim annulus 103 of chamber 101 inside, then product wafer is carried out to RTP.
Owing to mechanical arm being adjusted before, therefore, the mechanical arm after adjustment can guarantee that product wafer is placed on ideal position.
So far, this flow process finishes.
Visible, in the prior art, need to control wafer, carry out RTP in advance, then in control wafer, choose the resistance that a plurality of points detect every bit, thereby detect the direction that skew occurs control wafer, there is the direction of skew in the mechanical arm of placing control wafer, but, the method of prior art can only detect control wafer and toward which direction, skew occur with respect to ideal position, cannot detect side-play amount and be how many actually, so the direction that can only occur to be offset according to current control wafer in prior art is carried out tentative adjustment repeatedly, expend time in long, reduced the correction efficiency of wafer position.
Summary of the invention
In view of this, the invention provides a kind of method for correcting wafer position during quick annealing treatment, can improve the correction efficiency of wafer position.
For solving the problems of the technologies described above, technical scheme of the present invention is achieved in that
A kind of method for correcting wafer position during quick annealing treatment, the method is applied in short annealing processing unit, this device comprises: chamber, heater, outer rim annulus and mechanical arm, wherein, be positioned at the mechanical arm of chamber outside for control wafer or product wafer are positioned on the outer rim annulus of chamber, outer rim annulus is used for carrying control wafer or product wafer and drives its rotation, the inward flange line of outward flange annulus is covered by the control wafer of being placed or product wafer, outer edge line comes out, be positioned at the heater of chamber interior for high temperature heat source is provided, the method comprises:
A, employing mechanical arm are positioned over control wafer on the outer rim annulus of chamber interior, and control wafer rotates under the drive of outer rim annulus, then adopts heater to heat control wafer;
B, the intersection point of control wafer radius and control wafer edge line is denoted as the 1st point, the intersection point of the outer edge line of radius extended line and outer rim annulus is denoted as the 2nd point, select arbitrary radius as the 1st radius, rightabout along control wafer rotation, select successively the 2nd radius with the 1st radius interval a degree, the 3rd radius of interval a*2 degree, until the N radius of interval a* (N-1) degree, adopt laser beam to survey respectively along the 1st, 2, 3, until the 1st distance between the 1st and the 2nd of N radial direction, the 2nd distance, the 3rd distance, until N distance, wherein, N is more than or equal to 4 even number, a equals the business of 360 degree and N,
C, the initial value that variable i is set are 1, judge whether the absolute value of the difference of i distance and i+N/2 distance is less than or equal to the threshold value D setting in advance, if judgment result is that, are directly to perform step D; Otherwise, if i distance is greater than i+N/2 distance, determine that it is the outer edge line towards outer rim annulus along i radius that i adjusts direction, i adjustment amount is half of difference of i distance and i+N/2 distance, if i distance is less than i+N/2 distance, determine that it be the outer edge line towards outer rim annulus along i+N/2 radius that i adjusts direction, i adjustment amount be i+N/2 distance and i apart from half of difference;
The value of D, i adds up 1, and the i of the value of the i after cumulative after upgrading, if the i after upgrading is less than or equal to N/2, returns to execution step C; Otherwise, directly perform step E;
E, according to described the 1st definite adjustment amount, the 2nd adjustment amount until multinomial arbitrarily in N/2 adjustment amount, and the 1st adjust that direction, the 2nd is adjusted direction until N/2 adjusts any multinomial in direction that mechanical arm is adjusted, adopt the mechanical arm after adjusting product wafer to be positioned on the outer rim annulus of chamber interior, product wafer rotates under the drive of outer rim annulus, then adopts heater to heat product wafer.
Described in step B, adopt detecting laser beam to comprise along the method for the 1st distance between the 1st and the 2nd of the 1st radial direction:
Adopt generating laser to the 1st radius region Emission Lasers bundle;
Laser detector is positioned at the same plane parallel with control wafer with generating laser, laser detector receives folded light beam and from received folded light beam, detects the 1st reflection ray forming at the 1st point reflection and the 2nd reverberation forming at the 2nd point reflection, wherein, the subpoint of the 1st reflection ray on laser detector is the 1st subpoint, and the subpoint of the second reflection ray on laser detector is the 2nd subpoint;
Half of distance between the 1st subpoint and the 2nd subpoint is as the 1st distance;
Described in step B, adopt detecting laser beam to comprise along the method for the 1st distance between the 1st and the 2nd of the 2nd radial direction:
Adopt generating laser to the 2nd radius region Emission Lasers bundle;
Laser detector is positioned at the same plane parallel with control wafer with generating laser, laser detector receives folded light beam and from received folded light beam, detects the 1st reflection ray forming at the 1st point reflection and the 2nd reverberation forming at the 2nd point reflection, wherein, the subpoint of the 1st reflection ray on laser detector is the 1st subpoint, and the subpoint of the second reflection ray on laser detector is the 2nd subpoint;
Half of distance between the 1st subpoint and the 2nd subpoint is as the 2nd distance;
According to the method described above, until survey the 1st distance between the 1st and the 2nd along N radial direction, wherein, adopt described in step B detecting laser beam to comprise along the method for the 1st distance between the 1st and the 2nd of N radial direction:
Adopt generating laser to N radius region Emission Lasers bundle;
Laser detector is positioned at the same plane parallel with control wafer with generating laser, laser detector receives folded light beam and from received folded light beam, detects the 1st reflection ray forming at the 1st point reflection and the 2nd reverberation forming at the 2nd point reflection, wherein, the subpoint of the 1st reflection ray on laser detector is the 1st subpoint, and the subpoint of the second reflection ray on laser detector is the 2nd subpoint;
Half of distance between the 1st subpoint and the 2nd subpoint is as N distance.
Described threshold value D equals the arbitrary numerical value in 0.01 millimeter to 1 millimeter.
Described N is more than or equal to 50.
According to technical scheme provided by the present invention, adopt laser beam to survey respectively along the 1st, 2, 3...N the 1st distance between the 1st of control wafer radial direction the and the 2nd, the 2nd distance, the 3rd distance ... N distance, i is taken to N/2 from 1, judge respectively whether i distance and the absolute value of the difference of i+N/2 distance are less than or equal to the threshold value D setting in advance, if be greater than threshold value D, determine that i adjusts direction and i adjustment amount, according to determined adjustment direction and adjustment amount, mechanical arm is adjusted, adopt the mechanical arm after adjusting product wafer to be positioned on the outer rim annulus of chamber interior, guarantee that product wafer is placed in ideal position.Visible, the present invention has not only determined that adjustment amount also determined adjustment direction, can and adjust direction and adjust accurately wafer according to adjustment amount, without the adjustment that makes repeated attempts, has improved the correction efficiency of wafer position.
Accompanying drawing explanation
Fig. 1 is the cross-sectional view of RTP device in prior art.
Fig. 2 is the flow chart of a kind of method for correcting wafer position during quick annealing treatment provided by the present invention.
Fig. 3 is the detection principle schematic diagram of laser beam.
Embodiment
For making object of the present invention, technical scheme and advantage clearer, referring to the accompanying drawing embodiment that develops simultaneously, scheme of the present invention is described in further detail.
Core concept of the present invention is: adopt laser beam to survey respectively along the 1st, 2, 3...N the 1st distance between the 1st of control wafer radial direction the and the 2nd, the 2nd distance, the 3rd distance ... N distance, i is taken to N/2 from 1, judge respectively whether i distance and the absolute value of the difference of i+N/2 distance are less than or equal to the threshold value D setting in advance, if be greater than threshold value D, determine that i adjusts direction and i adjustment amount, according to determined adjustment direction and adjustment amount, mechanical arm is adjusted, adopt the mechanical arm after adjusting product wafer to be positioned on the outer rim annulus of chamber interior, guarantee that product wafer is placed in ideal position.
The present invention is applied in RTP device of the prior art, and as shown in Figure 1, this device mainly comprises: chamber 101, heater 102, outer rim annulus 103 and mechanical arm (scheming not shown).Be positioned at the mechanical arm of chamber 101 outsides for control wafer or product wafer are positioned on the outer rim annulus 103 of chamber 101, outer rim annulus 103 is for carrying control wafer or product wafer and driving its rotation, the inward flange line of outward flange annulus 103 by the control wafer of being placed or product wafer cover, outer edge line comes out, and is positioned at the heater 102 of chamber 101 inside for high temperature heat source is provided.
Fig. 2 is the flow chart of a kind of method for correcting wafer position during quick annealing treatment provided by the present invention.As shown in Figure 2, the method comprises:
Step 11, adopts mechanical arm that control wafer is positioned on the outer rim annulus of chamber interior, and control wafer rotates under the drive of outer rim annulus, then adopts heater to heat control wafer.
Step 12, the intersection point of control wafer radius and control wafer edge line is denoted as the 1st point, the intersection point of the outer edge line of radius extended line and outer rim annulus is denoted as the 2nd point, select arbitrary radius as the 1st radius, rightabout along control wafer rotation, select successively the 2nd radius with the 1st radius interval a degree, the 3rd radius of interval a*2 degree ... the N radius of interval a* (N-1) degree, adopt laser beam to survey respectively along the 1st, 2, 3...N the 1st distance between the 1st of radial direction the and the 2nd, the 2nd distance, the 3rd distance ... N distance, wherein, N is more than or equal to 4 even number, a equals the business of 360 degree and N.
Step 13, the initial value that variable i is set is 1, judges whether i distance and the absolute value of the difference of i+N/2 distance are less than or equal to the threshold value D setting in advance, if judgment result is that, is directly to perform step 14; Otherwise, if i distance is greater than i+N/2 distance, determine that it is the outer edge line towards outer rim annulus along i radius that i adjusts direction, i adjustment amount is half of difference of i distance and i+N/2 distance, if i distance is less than i+N/2 distance, determine that it be the outer edge line towards outer rim annulus along i+N/2 radius that i adjusts direction, i adjustment amount be i+N/2 distance and i apart from half of difference.
Step 14, the value of i adds up 1, and the i of the value of the i after cumulative after upgrading, if the i after upgrading is less than or equal to N/2, returns to execution step 13; Otherwise, directly perform step 15.
Step 15, according to described the 1st definite adjustment amount, the 2nd adjustment amount ... and/or N/2 adjustment amount, and the 1st adjust direction, the 2nd and adjust direction ... and/or N/2 adjusts direction mechanical arm is adjusted, adopt the mechanical arm after adjusting product wafer to be positioned on the outer rim annulus of chamber interior, product wafer rotates under the drive of outer rim annulus, then adopts heater to heat product wafer.
So far, this flow process finishes.
Below by an embodiment, the present invention is described in detail.
In this embodiment, N gets 4, and this embodiment comprises the steps:
Step 201, adopts mechanical arm that control wafer K is positioned on the outer rim annulus 103 of chamber 101 inside, and control wafer K rotates under the drive of outer rim annulus 103, then adopts 102 couples of control wafer K of heater to heat.
This step is same as the prior art, no longer describes in detail herein.
Step 202, the intersection point of the radius of control wafer K and control wafer K edge line is denoted as to the 1st point, the intersection point of the outer edge line of radius extended line and outer rim annulus 103 is denoted as the 2nd point, select arbitrary radius as the 1st radius, rightabout along control wafer K rotation, select successively and the 2nd radius of the 1st radius interval 90 degree, the 3rd radius of interval 180 degree, the 4th radius of interval 270 degree, adopts laser beam to survey respectively the 1st distance, the 2nd distance, the 3rd distance and the 4th distance between the 1st and the 2nd along the 1st, 2,3,3 radial directions.
In the prior art, adopt detecting laser beam distance to be widely used, the mode of above-mentioned detection range can be with reference to method of the prior art.The present invention only proposes a kind of detecting laser beam method as preferred embodiment, and the detection principle schematic diagram that Fig. 3 is laser beam describes in detail to detection method described in this step below in conjunction with Fig. 1 and Fig. 3.
The center of control wafer K is O, selects arbitrary radius OC1 as the 1st radius, along the C1 of the 1st radial direction, is the 1st point, along the D1 of the 1st radial direction, is the 2nd point, and C1D1 is the 1st distance.(diagram control wafer K direction of rotation is counterclockwise to the rightabout rotating along control wafer K, the rightabout of control wafer K rotation is clockwise direction), select successively and the 2nd radius OC2 of the 1st radius interval 90 degree, the 3rd radius OC3 of interval 180 degree, the 4th radius OC4 of interval 270 degree, the 2nd distance is C2D2, the 3rd distance is C3D3, and the 4th distance is C4D4.
C1D1, C2D2, C3D3 and C4D4 are the detection of a target, and the detection process of C1D1 of only take below describes as example, and C2D2, C3D3 are identical with the detection process of C1D1 with C4D4, and detection process comprises:
The first, adopt generating laser to the 1st radius OC1 region Emission Lasers bundle, for example, generating laser is arranged in the O1 place of Fig. 3.
Second, laser detector 301 is positioned at the same plane parallel with control wafer K with generating laser, as shown in Figure 3, laser detector 301 is positioned at plane M with generating laser, and plane M is parallel with control wafer K, laser detector 301 is for receiving folded light beam and detecting the 1st reflection ray C1A1 forming at the 1st C1 point reflection from received folded light beam, and the 2nd reflection ray D1B1 forming at the 2nd D1 point reflection.
Wherein, the subpoint of the 1st reflection ray C1A1 on laser detector 301 is the 1st subpoint A1, and the subpoint of the second reflection ray D1B1 on laser detector 301 is the 2nd subpoint B1.
Laser detector and generating laser are laser detection parts conventional in prior art, no longer describe in detail herein.
In addition, it should be noted that, why laser detector can detect C1A1 from folded light beam, D1B1, because C1, D1 is the transition point of reflectivity, the difference of laser detector by reflectivity is to determine the reflection ray from reflectivity transition point, specifically, OC1 is positioned on control wafer K, the upper each point of OC1 has identical reflectivity, C1D1 is positioned on outer rim annulus 103, the upper each point of C1D1 has identical reflectivity, and the reflectivity that is different from the upper each point of OC1, and the outside that D1 is ordered is air, (may be also that other are for the gas of annealing in process, nitrogen for example).
The 3rd, half of the distance A 1B1 between the 1st subpoint A1 and the 2nd subpoint B1 is as the 1st distance C 1D1.
As shown in Figure 3, according to reflection law, and O1, A1, B1 the is positioned at same plane M parallel with control wafer K, known: O1D1=D1B1, O1C1=C1A1.Suppose B2 point be B1 point with respect to the symmetric points of control wafer K, A2 point be A1 point with respect to the symmetric points of control wafer K, B2 must be positioned on the extended line of O1D1, A2 must be positioned on the extended line of O1C1, and D1B1=D1B2, C1A1=C1A2, A1B1=A2B2.
From above-mentioned analytic process, in triangle O1A2B2, O1D1=D1B2, O1C1=C1A2, so C1D1 equals A1B1 half.
In actual applications, because control wafer K is symmetrical with respect to center O, therefore, if laser detector 301 and generating laser can detect the 1st distance C 1D1, control wafer K is according to shown in Fig. 3 counterclockwise after 90-degree rotation, laser detector 301 and generating laser can detect the 2nd distance C 2D2, control wafer K is according to shown in Fig. 3 counterclockwise again after 90-degree rotation, laser detector 301 and generating laser can detect the 3rd distance C 3D3, control wafer K is according to shown in Fig. 3 counterclockwise again after 90-degree rotation, laser detector 301 and generating laser can detect the 4th distance C 4D4, survey the 2nd, 3, the method of 4 distances is identical with the method for above-mentioned detection the 1st distance.
Step 203, judges that whether the 1st distance and the absolute value of the difference of the 3rd distance are less than or equal to the threshold value D setting in advance, and if so, directly perform step 204; Otherwise, if the 1st distance is greater than the 3rd distance, determine that the 1st adjustment direction is the outer edge line towards outer rim annulus 103 along the 1st radius, the 1st adjustment amount is half of difference of the 1st distance and the 3rd distance, if the 1st distance is less than the 3rd distance, determining the 1st, to adjust direction be the outer edge line towards outer rim annulus 103 along the 3rd radius, the 1st adjustment amount be the 3rd distance and the 1st apart from half of difference.
Preferably, threshold value D equals the arbitrary numerical value in 0.01 millimeter to 1 millimeter.
If the absolute value of the difference of the 1st distance C 1D1 and the 3rd distance C 3D3 is less than or equal to threshold value D, without adjust the position of control wafer K along straight line C1C3 direction.
If the absolute value of the difference of the 1st distance C 1D1 and the 3rd distance C 3D3 is greater than threshold value D, judge again whether the 1st distance C 1D1 is greater than the 3rd distance C 3D3, if the 1st distance C 1D1 is greater than the 3rd distance C 3D3, should make control wafer K move towards the outer edge line of outer rim annulus 103 along OC1, mobile distance is half of difference of the 1st distance C 1D1 and the 3rd distance C 3D3, then perform step 204 then.On the contrary, if the 1st distance C 1D1 is less than the 3rd distance C 3D3, should make control wafer K move towards the outer edge line of outer rim annulus 103 along OC3, mobile distance is half of difference of the 3rd distance C 3D3 and the 1st distance C 1D1, then, then performs step 204.
Step 204, judges that whether the 2nd distance and the absolute value of the difference of the 4th distance are less than or equal to the threshold value D setting in advance, and if so, directly perform step 205; Otherwise, if the 2nd distance is greater than the 4th distance, determine that the 2nd adjustment direction is the outer edge line towards outer rim annulus 103 along the 2nd radius, the 2nd adjustment amount is half of difference of the 2nd distance and the 4th distance, if the 2nd distance is less than the 4th distance, determining the 2nd, to adjust direction be the outer edge line towards outer rim annulus 103 along the 4th radius, the 2nd adjustment amount be the 4th distance and the 2nd apart from half of difference.
Preferably, threshold value D equals 0.03 millimeter.
If the absolute value of the difference of the 2nd distance C 2D2 and the 4th distance C 3D3 is less than or equal to threshold value D, without adjust the position of control wafer K along straight line C2C4 direction.
If the absolute value of the difference of the 2nd distance C 2D2 and the 4th distance C 4D4 is greater than threshold value D, judge again whether the 2nd distance C 21D2 is greater than the 4th distance C 4D4, if the 2nd distance C 2D2 is greater than the 4th distance C 4D4, should make control wafer K move towards the outer edge line of outer rim annulus 103 along OC2, mobile distance is half of difference of the 2nd distance C 2D2 and the 4th distance C 4D4, then perform step 205 then.On the contrary, if the 2nd distance C 2D2 is less than the 4th distance C 4D4, should make control wafer K move towards the outer edge line of outer rim annulus 103 along OC4, mobile distance is half of difference of the 4th distance C 4D4 and the 2nd distance C 2D2, then, then performs step 205.
Step 205, according to described the 1st definite adjustment amount, the 1st, adjust direction, the 2nd adjustment amount and/or the 2nd adjustment direction, mechanical arm is adjusted, adopt the mechanical arm after adjusting product wafer to be positioned on the outer rim annulus 103 of chamber 101 inside, product wafer rotates under the drive of outer rim annulus 103, then adopts 102 pairs of product wafers of heater to heat.
The content that the method for mechanical arm being adjusted according to determined adjustment amount and adjustment direction is prior art, it will not go into details herein.
After mechanical arm is adjusted, adopt mechanical arm after adjusting to place product wafer and can guarantee that product wafer is placed on ideal position, avoided the product wafer uneven situation of being heated.
In addition, in the above-described embodiments, only take and survey the 1st, 2,3,4 on the 1st, 2,3,4 radiuses apart from describing as example, in actual applications, in control wafer, at least select four radiuses, and the interval of every adjacent two radiuses is all 90 degree, therefore the minimum value that the minimum value of N is 4, a is 90.
In actual applications, the rotating speed of control wafer was generally for 4 circle/seconds, preferably, look-in frequency is at least 200 hertz, that is to say, when control wafer is revolved while turning around, at least survey 50 times, N is more than or equal to 50, and the interval of selected every adjacent two radiuses is at least all a=306 degree/50=7.2 degree.
Certainly, for the not restriction of maximum of N, the value of N is larger, adjusts precision higher.
So far, this flow process finishes.
As seen from the above technical solutions, the present invention adopts laser beam to survey respectively along the 1st, 2, 3...N the 1st distance between the 1st of control wafer radial direction the and the 2nd, the 2nd distance, the 3rd distance ... N distance, i is taken to N/2 from 1, judge respectively whether i distance and the absolute value of the difference of i+N/2 distance are less than or equal to the threshold value D setting in advance, if be greater than threshold value D, determine that i adjusts direction and i adjustment amount, according to determined adjustment direction and adjustment amount, mechanical arm is adjusted, adopt the mechanical arm after adjusting product wafer to be positioned on the outer rim annulus of chamber interior, guarantee that product wafer is placed in ideal position.Visible, the present invention has not only determined that adjustment amount also determined adjustment direction, can and adjust direction and adjust accurately wafer according to adjustment amount, without the adjustment that makes repeated attempts, has improved the correction efficiency of wafer position.
The above, be only preferred embodiment of the present invention, is not intended to limit protection scope of the present invention.Within the spirit and principles in the present invention all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (4)
1. a method for correcting wafer position during quick annealing treatment, the method is applied in short annealing processing unit, this device comprises: chamber, heater, outer rim annulus and mechanical arm, wherein, be positioned at the mechanical arm of chamber outside for control wafer or product wafer are positioned on the outer rim annulus of chamber, outer rim annulus is used for carrying control wafer or product wafer and drives its rotation, the inward flange line of outward flange annulus is covered by the control wafer of being placed or product wafer, outer edge line comes out, be positioned at the heater of chamber interior for high temperature heat source is provided, the method comprises:
A, employing mechanical arm are positioned over control wafer on the outer rim annulus of chamber interior, and control wafer rotates under the drive of outer rim annulus, then adopts heater to heat control wafer;
It is characterized in that, the method also comprises: B, the intersection point of control wafer radius and control wafer edge line is denoted as the 1st point, the intersection point of the outer edge line of radius extended line and outer rim annulus is denoted as the 2nd point, select arbitrary radius as the 1st radius, rightabout along control wafer rotation, select successively the 2nd radius with the 1st radius interval a degree, the 3rd radius of interval a*2 degree is until the N radius of interval a* (N-1) degree, adopt laser beam to survey respectively along the 1st, 2, 3 until the 1st distance between the 1st and the 2nd of N radial direction, the 2nd distance, the 3rd distance is until N distance, wherein, N is more than or equal to 4 even number, a equals the business of 360 degree and N,
C, the initial value that variable i is set are 1, judge whether the absolute value of the difference of i distance and i+N/2 distance is less than or equal to the threshold value D setting in advance, if judgment result is that, are directly to perform step D; Otherwise, if i distance is greater than i+N/2 distance, determine that it is the outer edge line towards outer rim annulus along i radius that i adjusts direction, i adjustment amount is half of difference of i distance and i+N/2 distance, if i distance is less than i+N/2 distance, determine that it be the outer edge line towards outer rim annulus along i+N/2 radius that i adjusts direction, i adjustment amount be i+N/2 distance and i apart from half of difference;
The value of D, i adds up 1, and the i of the value of the i after cumulative after upgrading, if the i after upgrading is less than or equal to N/2, returns to execution step C; Otherwise, directly perform step E;
E, according to described the 1st definite adjustment amount, the 2nd adjustment amount until multinomial arbitrarily in N/2 adjustment amount, and the 1st adjust that direction, the 2nd is adjusted direction until N/2 adjusts any multinomial in direction that mechanical arm is adjusted, adopt the mechanical arm after adjusting control wafer to be positioned on the outer rim annulus of chamber interior, control wafer rotates under the drive of outer rim annulus, then adopts heater to heat control wafer.
2. method according to claim 1, is characterized in that,
Described in step B, adopt detecting laser beam to comprise along the method for the 1st distance between the 1st and the 2nd of the 1st radial direction:
Adopt generating laser to the 1st radius region Emission Lasers bundle;
Laser detector is positioned at the same plane parallel with control wafer with generating laser, laser detector receives folded light beam and from received folded light beam, detects the 1st reflection ray forming at the 1st point reflection and the 2nd reverberation forming at the 2nd point reflection, wherein, the subpoint of the 1st reflection ray on laser detector is the 1st subpoint, and the subpoint of the second reflection ray on laser detector is the 2nd subpoint;
Half of distance between the 1st subpoint and the 2nd subpoint is as the 1st distance;
Described in step B, adopt detecting laser beam to comprise along the method for the 1st distance between the 1st and the 2nd of the 2nd radial direction:
Adopt generating laser to the 2nd radius region Emission Lasers bundle;
Laser detector is positioned at the same plane parallel with control wafer with generating laser, laser detector receives folded light beam and from received folded light beam, detects the 1st reflection ray forming at the 1st point reflection and the 2nd reverberation forming at the 2nd point reflection, wherein, the subpoint of the 1st reflection ray on laser detector is the 1st subpoint, and the subpoint of the second reflection ray on laser detector is the 2nd subpoint;
Half of distance between the 1st subpoint and the 2nd subpoint is as the 2nd distance;
According to the method described above, until survey the 1st distance between the 1st and the 2nd along N radial direction, wherein, adopt described in step B detecting laser beam to comprise along the method for the 1st distance between the 1st and the 2nd of N radial direction:
Adopt generating laser to N radius region Emission Lasers bundle;
Laser detector is positioned at the same plane parallel with control wafer with generating laser, laser detector receives folded light beam and from received folded light beam, detects the 1st reflection ray forming at the 1st point reflection and the 2nd reverberation forming at the 2nd point reflection, wherein, the subpoint of the 1st reflection ray on laser detector is the 1st subpoint, and the subpoint of the second reflection ray on laser detector is the 2nd subpoint;
Half of distance between the 1st subpoint and the 2nd subpoint is as N distance.
3. method according to claim 2, is characterized in that, described threshold value D equals the arbitrary numerical value in 0.01 millimeter to 1 millimeter.
4. method according to claim 3, is characterized in that, described N is more than or equal to 50.
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| CN1420978A (en) * | 1999-08-12 | 2003-05-28 | Asml美国公司 | Hot wall rapid thermal processor |
| CN2717014Y (en) * | 2004-04-01 | 2005-08-10 | 上海宏力半导体制造有限公司 | Silicon slice holder correcting tool of semiconductor thermal technology |
| CN101127317A (en) * | 2007-09-18 | 2008-02-20 | 深圳市矽电半导体设备有限公司 | Positioning device and positioning method for wafer sheet |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1420978A (en) * | 1999-08-12 | 2003-05-28 | Asml美国公司 | Hot wall rapid thermal processor |
| CN2717014Y (en) * | 2004-04-01 | 2005-08-10 | 上海宏力半导体制造有限公司 | Silicon slice holder correcting tool of semiconductor thermal technology |
| CN101127317A (en) * | 2007-09-18 | 2008-02-20 | 深圳市矽电半导体设备有限公司 | Positioning device and positioning method for wafer sheet |
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