CN102565653A

CN102565653A - Wafer testing method

Info

Publication number: CN102565653A
Application number: CN2010106202899A
Authority: CN
Inventors: 张宇飞; 陈宏领; 周第延
Original assignee: Semiconductor Manufacturing International Shanghai Corp
Current assignee: Semiconductor Manufacturing International Shanghai Corp; Semiconductor Manufacturing International Beijing Corp
Priority date: 2010-12-29
Filing date: 2010-12-29
Publication date: 2012-07-11
Anticipated expiration: 2030-12-29
Also published as: CN102565653B

Abstract

The invention provides a wafer testing method which comprises the steps of: firstly, testing one part of crystal grains on a wafer to be tested in parallel, carrying out statistic analysis on a testing result by applying a script program so that the total yield of the wafer to be tested is judged; if the yield is better, properly reducing the testing requirement, i.e. testing residual crystal grains which are not tested by adopting a testing program for simplifying testing contents according to a product so that testing time is saved; and if the yield is poorer, keeping the original testing requirement even increasing the testing requirement, i.e. testing the residual crystal grains which are not tested by adopting the original testing program or a testing program which is stricter than the original testing program so that the accuracy of testing is ensured, wherein the testing programs are replaced automatically by depending on the script program. By adopting the wafer testing method provided by the invention, the accuracy of the testing result of the wafer can be ensured, and the testing time can be effectively saved, thus the testing cost is saved.

Description

A kind of crystal round test approach

Technical field

The present invention relates to the semiconductor test technical field, particularly a kind of crystal round test approach.

Background technology

The manufacture process of semiconductor subassembly can be divided into silicon wafer process, wafer sort, encapsulation and last test haply, and silicon wafer process is on Silicon Wafer, to make electric circuitry packages; After completing, become crystal grain (die) one by one on the wafer, then the wafer sort step is made testing electrical property to crystal grain; Underproof crystal grain is eliminated; And wafer cut into several crystal grain, and encapsulation be with qualified crystal grain through the step of packing with routing, make crystal grain become integrated circuit (Integrated Circuit; IC), to guarantee the quality of integrated circuit at last again through testing electrical property.

Please referring to Fig. 1, Fig. 1 is the wafer parallel test method synoptic diagram of prior art.As shown in Figure 1, in the crystal round test approach of prior art, when wafer to be measured was carried out concurrent testing, the identical crystal grain of shade in the each hookup 1 of the probe on the probe was written into corresponding testing program through test machine and tests.The test procedure that test machine is moved when testing the full wafer wafer at every turn is identical.No matter therefore the yield of wafer to be tested how, each crystal grain on the wafer is accomplished test successively all needs the identical time.Therefore the method for testing of prior art can not be adjusted Test Strategy according to the yield situation of wafer, thereby needs a large amount of test duration of cost.

Summary of the invention

The technical matters that the present invention will solve provides a kind of crystal round test approach, can not adjust Test Strategy according to the yield situation of wafer with the method for testing that solves prior art, thereby needs the cost problem of a large amount of test durations.

For solving the problems of the technologies described above, the present invention provides a kind of crystal round test approach, may further comprise the steps:

Step 1 provides a wafer to be measured, and said first test procedure of operation carries out the parallel probe test first time to said wafer to be measured on test machine; Part crystal grain on the said wafer to be measured of the said parallel probe test test first time; Said first test procedure is normal test procedure, comprises required test event and content measurement usually;

Step 2; Operation one shell script carries out statistical study to the result of the said parallel probe test first time on test machine; And analysis result is set certain criterion through said shell script; Said shell script judges to said analysis result that according to said criterion if said analysis result meets said criterion, then said shell script calls second test procedure and carries out step 4; If said analysis result does not meet said criterion, then said shell script calls the 3rd test procedure and carries out step 5;

Step 4, said test machine are moved second test procedure residue crystal grain are tested, the test procedure of said second test procedure for more simplifying than said first test procedure; Repeated execution of steps four, the crystal grain on said wafer to be measured all carried out test;

Step 5, said test machine moves the 3rd test procedure said test result is tested, and said the 3rd test procedure is with the identical program of said first test procedure or than the more strict test procedure of said first test procedure; Repeated execution of steps five, the crystal grain on said wafer to be measured all advanced test.

Optional, also comprise: step 6, test the full wafer wafer after, said shell script is written into said first test procedure again and prepares for next wafer test.

Crystal round test approach of the present invention at first through the first time probe test a part of crystal grain on the wafer to be measured is tested; And test result is carried out analysis and judgement through shell script, through the test analysis of wafer to be measured top crystal grain is judged the yield situation that this wafer to be measured is overall.If yield is better, then can suitably loosen test request, promptly residue is tested without the loose test procedure of crystal grain employing of test, so that save the test duration; If yield is relatively poor, then keep original test request even improve test request, promptly adopt original test procedure or more strict test procedure to test without the crystal grain of testing, to guarantee accuracy of test to residue.Adopt crystal round test approach of the present invention not only can guarantee the wafer sort analytical accuracy, can effectively save the test duration simultaneously, thereby practice thrift testing cost.

Description of drawings

Fig. 1 is the wafer parallel test method synoptic diagram of prior art;

Fig. 2 is a crystal round test approach first step method synoptic diagram of the present invention.

Embodiment

For make above-mentioned purpose of the present invention, feature and advantage can be more obviously understandable, below specific embodiments of the invention do detailed explanation.

Crystal round test approach of the present invention multiple substitute mode capable of using realizes; Be to explain below through preferred embodiment; Certainly the present invention is not limited to this specific embodiment, and the general replacement that the one of ordinary skilled in the art knew is encompassed in protection scope of the present invention undoubtedly.

Please referring to Fig. 2, Fig. 2 is a crystal round test approach first step method synoptic diagram of the present invention.As shown in Figure 2, crystal round test approach of the present invention has been done further improvement based on existing wafer parallel test method, may further comprise the steps:

Step 1; One wafer to be measured is provided; Said first test procedure of operation carries out the parallel probe test first time to said wafer to be measured on test machine, and the part crystal grain on the said wafer to be measured is tested in the said parallel probe test first time, divides the crystal grain of representative like black part among Fig. 1; Said first test procedure is normal test procedure, comprises required test event and content measurement usually;

Step 4; Said test machine moves second test procedure residue crystal grain is tested; The test procedure of said second test procedure for more simplifying than said first test procedure; For example reduce certain test event compared to said first test procedure, or for example test the flash product the part storage area but not all; Repeated execution of steps four, the crystal grain on said wafer to be measured all carried out test;

Step 5; Said test machine moves the 3rd test procedure said test result is tested; Said the 3rd test procedure can be for the identical program of said first test procedure; Also can for example increase more test event for than the more strict test procedure of said first test procedure compared to said first test procedure; Repeated execution of steps five, the crystal grain on said wafer to be measured all advanced test.

Step 6, test the full wafer wafer after, said shell script is written into said first test procedure again and prepares for the test of next wafer.

Crystal round test approach of the present invention at first through the first time probe test a part of crystal grain on the wafer to be measured is tested and test result is carried out analysis and judgement, through the test analysis of wafer to be measured top crystal grain is judged the yield situation that this wafer to be measured is overall.If yield is better, then can suitably loosen test request, when promptly residue being tested without the loose test procedure of crystal grain employing of test, so that save the test duration; If yield is relatively poor, then keep original test request even improve test request, promptly adopt original test procedure or more strict test procedure to test without the crystal grain of testing, to guarantee accuracy of test to residue.Adopt crystal round test approach of the present invention not only can guarantee the wafer sort analytical accuracy, can effectively save the test duration simultaneously, thereby practice thrift testing cost.

Please, adopt the method for testing of prior art and the inventive method to test the final needed test duration of back than right respectively to about 500 wafer in the table 1 referring to following table 1.Can find out that through table 1 the inventive method is more saved time compared to art methods, practice thrift cost.

Table 1

Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, belong within the scope of claim of the present invention and equivalent technologies thereof if of the present invention these are revised with modification, then the present invention also is intended to comprise these changes and modification interior.

Claims

1. crystal round test approach may further comprise the steps:

2. crystal round test approach as claimed in claim 1 is characterized in that, also comprises: step 6, test the full wafer wafer after, said shell script is written into said first test procedure again and prepares for the test of next wafer.