CN102560351A - 镀膜件及其制备方法 - Google Patents

镀膜件及其制备方法 Download PDF

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CN102560351A
CN102560351A CN2010106178476A CN201010617847A CN102560351A CN 102560351 A CN102560351 A CN 102560351A CN 2010106178476 A CN2010106178476 A CN 2010106178476A CN 201010617847 A CN201010617847 A CN 201010617847A CN 102560351 A CN102560351 A CN 102560351A
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CN102560351B (zh
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张新倍
陈文荣
蒋焕梧
陈正士
李聪
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Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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Hon Hai Precision Industry Co Ltd
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Abstract

本发明提供一种镀膜件，其包括基体及形成于基体表面的疏水层，该疏水层包括依次形成于基体表面的非晶氮化碳(CNy)层及氟化非晶氮化碳(CNxFz)层，其中1≤y≤3，1≤x≤3，1≤z≤4。本发明所述镀膜件的疏水层与水的接触角达到110°以上，且该疏水层具有化学性质稳定、耐高温、硬度高、耐磨等优点，可有效保护基体，相应地延长镀膜件的使用寿命。此外，本发明还提供一种上述镀膜件的制备方法。

Description

镀膜件及其制备方法
技术领域
本发明涉及一种镀膜件及该镀膜件的制备方法，特别涉及一种具有疏水效果的镀膜件及该镀膜件的制备方法。
背景技术
浸润性是固体表面的重要性质之一。疏水表面是指固体表面与水的接触角大于90°的表面。近年来，疏水表面在日常生活和工业领域有着越来越重要的应用价值。目前应用较多的主要为在固体表面涂覆表面能低的有机疏水层，其中该类有机疏水层以含氟和/或硅的高分子材料居多；但有机疏水材料通常具有硬度低、不耐磨、耐热温度低等缺点，严重影响其进一步的应用。
发明内容
有鉴于此，有必要提供一种有效解决上述问题的镀膜件。
另外，还有必要提供一种上述镀膜件的制备方法。
一种镀膜件，其包括基体及形成于基体表面的疏水层，该疏水层包括依次形成于基体表面的非晶氮化碳(CNy)层及氟化非晶氮化碳(CNxFz)层，其中1≤y≤3，1≤x≤3，1≤z≤4。
一种镀膜件的制备方法，其包括如下步骤：
提供一基体；
采用磁控溅射法，使用石墨靶，以氨气为反应气体，在基体表面形成一氮化碳(CNy)层，其中1≤y≤3，该氮化碳层为非晶态；
对该氮化碳层进行表面氟化处理以形成疏水层，该疏水层包括依次形成于基体表面的非晶氮化碳(CNy)层及氟化非晶氮化碳(CNxFz)层，其中1≤x≤3，1≤z≤4。
本发明所述镀膜件的疏水层与水的接触角达到110°以上，且该疏水层的主要成份为氮化碳，而氮化碳具有化学性质稳定、耐高温、硬度高、耐磨等优点，可有效保护基体，相应地延长镀膜件的使用寿命。
附图说明
图1为本发明一较佳实施例镀膜件的剖视图；
图2是本发明一较佳实施例真空镀膜机的示意图。
主要元件符号说明
镀膜件                        10
基体                          11
疏水层                        13
非晶氮化碳层                  131
氟化非晶氮化碳层              133
真空镀膜机                    20
镀膜室                        21
石墨靶                        23
轨迹                          25
真空泵                        30
具体实施方式
请参阅图1，本发明一较佳实施方式的镀膜件10包括基体11及形成于基体11表面的疏水层13。
该基体11可为不锈钢或玻璃。
该疏水层13包括依次形成于基体11表面的非晶氮化碳(CNy)层131及氟化非晶氮化碳(CNxFz)层133，其中1≤y≤3，1≤x≤3，1≤z≤4。该疏水层13具有相对较低的表面能，其与水的接触角可达110°以上。
所述非晶氮化碳(CNy)层131的厚度为100～600nm。该非晶氮化碳层131可以磁控溅射镀膜法形成，如中频磁控溅射镀膜法。
所述氟化非晶氮化碳(CNxFz)层133的厚度为200～400nm。
本发明一较佳实施方式的镀膜件10的制备方法，其包括以下步骤：
提供一基体11，该基体11可为不锈钢或玻璃。
将基体11放入无水乙醇中进行超声波清洗，以去除基体11表面的污渍，清洗时间可为30～50min。
对经上述清洁前处理后的基体11的表面进行氩气等离子体清洗，以进一步去除基体11表面的油污，以及改善基体11表面与后续镀层的结合力。结合参阅图2，提供一真空镀膜机20，该真空镀膜机20包括一镀膜室21及连接于镀膜室21的一真空泵30，真空泵30用以对镀膜室21抽真空。该镀膜室21内设有转架(未图示)和相对设置的二石墨靶23。转架带动基体11沿圆形的轨迹25公转，且基体11在沿轨迹25公转时亦自转。
该等离子体清洗的具体操作及工艺参数可为：将基体11固定于真空镀膜机20的镀膜室21中的转架上，将该镀膜室21抽真空至3.0×10-5Torr，然后向镀膜室21内通入流量为500sccm(标准状态毫升/分钟)的氩气(纯度为99.999％)，并施加-100～-180V的偏压于基体11，对基体11表面进行氩气等离子体清洗，清洗时间为3～10min。
采用磁控溅射法在经氩气等离子体清洗后的基体11上溅镀一氮化碳(CNy)层，其中1≤y≤3，所述氮化碳层为非晶态。溅镀该氮化碳层在所述真空镀膜机20中进行。使用石墨靶23，石墨靶23的功率为7～10kW，以氨气为反应气体，氨气流量可为110～300sccm，以氩气为工作气体，氩气流量可为300～380sccm。溅镀时对基体11施加-50～-300V的偏压，并加热所述镀膜室21至温度为150～420℃，镀膜时间可为20～60min。该氮化碳层的厚度可为500～800nm。
对非晶态的氮化碳层进行表面氟化处理以形成所述疏水层13。将表面镀有氮化碳层的基体11放入化学表面处理炉(图未示)中，通入四氟化碳(CF4)气体，气压可为10～100Pa，在基体11附近施加射频电磁场使四氟化碳气体产生辉光放电，射频功率密度为20～100W/cm2，氟化温度为80～120℃，氟化时间为10～120min。CF4电离出的F离子可与氮化碳层中的悬挂键发生键合反应，从而使所述氮化碳层表层部分形成所述氟化非晶氮化碳层133，所述氮化碳层未经氟化处理的部分形成所述非晶氮化碳层131。
下面通过实施例来对本发明进行具体说明。
实施例1
本实施例所使用的真空镀膜机20为中频磁控溅射镀膜机，为深圳南方创新真空技术有限公司生产，型号为SM-1100H。
提供一基体11，该基体11为玻璃。
等离子体清洗：氩气流量为500sccm，基体11的偏压为-150V，等离子体清洗时间为8min。
溅镀氮化碳层：石墨靶23的功率为10kW，氨气流量为280sccm，氩气流量为320sccm，基体11的偏压为-180V，镀膜温度为300℃，镀膜时间为40min，氮化碳层的厚度为450nm。
表面氟化处理：四氟化碳气体的气压为11Pa，射频电磁场的功率密度为55W/cm2，氟化温度为100℃，氟化时间为80min。
本实施例制备的非晶CNy层131中y的值为3，非晶CNy层131的厚度为269nm；非晶CNxFz层133中x的值为3，z的值为1，非晶CNxFz层133的厚度为220nm。
使用接触角测量仪测得本实施例所制得的疏水层13与水的接触角为110.2°。
实施例2
本实施例所使用的真空镀膜机20与实施例1中使用的相同。
提供一基体11，该基体11为不锈钢。
等离子体清洗：氩气流量为500sccm，基体11的偏压为-180V，等离子体清洗时间为10min。
溅镀氮化碳层：石墨靶23的功率为9kW，氨气流量为220sccm，氩气流量为300sccm，基体11的偏压为-220V，镀膜温度为330℃，镀膜时间为55min，氮化碳层的厚度为612nm。
表面氟化处理：四氟化碳气体的气压为98Pa，射频电磁场的功率密度为71W/cm2，氟化温度为120℃，氟化时间为80min。
本实施例制备的非晶CNy层131中y的值为1，非晶CNy层131的厚度为385nm；非晶CNxFz层133中x的值为1，z的值为3，非晶CNxFz层133的厚度为356nm。
使用接触角测量仪测得本实施例所制得的疏水层13与水的接触角为116.4°。
本发明较佳实施方式镀膜件10的疏水层13与水的接触角达到110°以上，且该疏水层13主要成份为氮化碳，而氮化碳具有化学性质稳定、耐高温、硬度高、耐磨等优点，可有效保护基体11，相应地延长镀膜件10的使用寿命。

Claims (9)

1.一种镀膜件，其包括基体及形成于基体表面的疏水层，其特征在于：该疏水层包括依次形成于基体表面的非晶氮化碳(CNy)层及氟化非晶氮化碳(CNxFz)层，其中1≤y≤3，1≤x≤3，1≤z≤4。
2.如权利要求1所述的镀膜件，其特征在于：所述基体为不锈钢或玻璃。
3.如权利要求1所述的镀膜件，其特征在于：所述非晶氮化碳(CNy)层采用磁控溅射的方式形成，其厚度为100～600nm。
4.如权利要求1所述的镀膜件，其特征在于：所述氟化非晶氮化碳(CNxFz)层的厚度为200～400nm。
5.一种镀膜件的制备方法，其包括如下步骤：
提供一基体；
采用磁控溅射法，使用石墨靶，以氨气为反应气体，在基体表面形成一氮化碳(CNy)层，其中1≤y≤3，该氮化碳层为非晶态；
对该氮化碳层进行表面氟化处理以形成疏水层，该疏水层包括依次形成于基体表面的非晶氮化碳(CNy)层及氟化非晶氮化碳(CNxFz)层，其中1≤x≤3，1≤z≤4。
6.如权利要求5所述的镀膜件的制备方法，其特征在于：所述形成CNy层的步骤采用如下方式实现：石墨靶的功率为7～10kW，氨气的流量为110～300sccm，以氩气为工作气体，氩气流量为300～380sccm，基体偏压为-50～-300V，镀膜温度为150～420℃，镀膜时间为20～60min。
7.如权利要求5所述的镀膜件的制备方法，其特征在于：所述表面氟化处理的步骤采用如下方式实现：通入四氟化碳气体，四氟化碳的气压为10～100Pa，施加射频电磁场使四氟化碳气体产生辉光放电，射频功率密度为20～100W/cm2，氟化温度为80～120℃，氟化时间为10～120min。
8.如权利要求5所述的镀膜件的制备方法，其特征在于：所述基体为不锈钢或玻璃。
9.如权利要求5所述的镀膜件的制备方法，其特征在于：所述制备方法还包括在溅镀氮化碳层前对基体进行清洁前处理及等离子体清洗的步骤。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102732827A (zh) * 2011-04-14 2012-10-17 鸿富锦精密工业（深圳）有限公司 镀膜件及其制作方法
CN103031528A (zh) * 2011-09-29 2013-04-10 比亚迪股份有限公司 一种防指纹薄膜的制备方法及由该方法制备的防指纹薄膜

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CN102560348A (zh) * 2010-12-29 2012-07-11 鸿富锦精密工业（深圳）有限公司 镀膜件及其制备方法
CN102560349A (zh) * 2010-12-29 2012-07-11 鸿富锦精密工业（深圳）有限公司 镀膜件及其制备方法
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