CN102543871A - Process for manufacturing gallium nitride-base GaN power integrated circuit - Google Patents

Process for manufacturing gallium nitride-base GaN power integrated circuit Download PDF

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CN102543871A
CN102543871A CN2012100038137A CN201210003813A CN102543871A CN 102543871 A CN102543871 A CN 102543871A CN 2012100038137 A CN2012100038137 A CN 2012100038137A CN 201210003813 A CN201210003813 A CN 201210003813A CN 102543871 A CN102543871 A CN 102543871A
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algan
integrated circuit
hemts
power integrated
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李海鸥
黄伟
刘召军
陈万军
于宗光
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WUXI JINGKAI TECHNOLOGY CO LTD
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WUXI JINGKAI TECHNOLOGY CO LTD
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Abstract

The invention discloses a process for manufacturing a gallium nitride-base GaN power integrated circuit. According to the process, current channels in a high-voltage area and a low-voltage area are cut off by the anisotropic etching of an inductively coupled plasma (ICP) etching technology to realize electric isolation in the areas. An F-ionic layer with negative charges is formed in an AlGaN potential barrier area under a metal gate Ni/Au by utilizing a reactive ion etching (RIE) autoregistration plasma etching technology, and high-density two-dimensional electron gas in a heterogenous junction is exhausted, so that an exhausted channel is converted into an enhanced channel, and the normally-closed characteristic of an AlGaN/GaN high electron mobility transistors (HEMTs) device is formed. By means of a reduced surface field (Resurf) voltage withstanding structure and a surface source field plate of an epitaxial layer GaN/silicon substrate, the electric-field distribution of a drifting area of a high-voltage device is optimized, an offset area of the device is designed, and the influence of Miller capacitance Cgd on the frequency response of the device is shielded to acquire normally-closed gallium nitride-base AlGaN/GaN (HEMTs) high-voltage device which is applied to a high-speed switch.

Description

Gallium nitrate based GaN power integrated circuit manufacturing process
Technical field
The present invention relates to the gallium nitrate based power electronic technology of compatible silicon technology, especially relate to enhanced AlGaN/development of GaN HEMTs high tension apparatus and the gallium nitrate based integrated circuit of monolithic based on silicon substrate.
Background technology
Along with the development of microelectric technique, the theoretical limit that traditional Si and GaAs performance of semiconductor device have determined near its material itself.Wide bandgap semiconductor gallium nitride (GaN) has energy gap big (3.4eV), critical breakdown electric field high (3MV/cm), saturated electron drift velocity high (3 * 10 7Cm/s), the high concentration two-dimensional electron gas (2 * 10 13Cm 2), thermal conductivity is big, capability of resistance to radiation is strong and good characteristics such as chemical stability, the core component that has amplified as microwave power in microwave telecommunication system, radio and television emission, radar and navigation system is realized the emission and the long-distance transmissions of signal.
The whole world up to 50% electric and electronic system by controlling based on the power management system of power semiconductor and integrated circuit.In the last few years, the researcher find because GaN material critical breakdown electric field than high nearly 10 times of silicon (Si), the conducting resistance of AlGaN/GaN power device ( R ON) hang down nearly three one magnitude in withstand voltage surpassing in the application of 350V than Si device, break through the theoretical limit of main flow silicon-based power devices fully, and can dwindle chip area and the weight that alleviates drive circuit synchronously.In addition, as the about 250 ℃ power electronics applications of working temperature, GaN power electronics new technology has surmounted 150 ℃ of the temperature upper limits of silica-based power semiconductor work because of having advantages such as no minority carrier storage effect, high temperature reliability.Expert's prophesy above-mentioned technology in 5 ~ 10 years progressively substitutes silica-based IGBT and fast recovery diode; And at intelligent grid, hybrid vehicle, the high-speed railway in future and relate in the novel industries such as aerospace field and play the part of very important role, as Fig. 1 (a) (b) shown in.International main research institution has carried out relevant research work in succession.In the U.S., mainly contain research institutions such as UCSB, Cornell University and mainly be engaged in the Project Study in this field.The international rectification IR of well-known semiconductor company released the gallium nitrate based power chip product of DC/DC-BUCK that 7.5 ~ 13.2V uses in 2010.Japan starts late relatively, but this respect is paid much attention to, the fund input great efforts, and it is numerous to be engaged in mechanism, comprising: Toshiba (Toshiba), Furukawa (Furukawa), Panasonic (Matsushita), Toyota (Toyota) and major companies such as (Fujitsu) of Fuji.Its research level has surpassed the U.S. at present.Toyota Company's emphasis endeavours high-voltage switch gear AlGaN/GaN HEMTs is used for the power-supply system of its environment-friendly type hybrid vehicle " Prius " series at present, to improve the actuating force and the stability of system.
The AlGaN/GaN material is because of self piezoelectric polarization and spontaneous polarization characteristics; The raceway groove of conventional H EMTs is exhaustive; The grid-control switch list reveals normal open state, and this is not only incompatible with the universal electric line system design of main flow, is the power supply of normal open device but also need extraly increase a DC power supply; Thereby significantly increase the power consumption and the volume of system; Therefore develop the integrated power integrated circuit that bears the enhanced AlGaN/GaN HEMTs device of high-breakdown-voltage, the gallium nitride integrated circuit of the silica-based technology of especially compatible main flow, power electronics is vital in using in modern times.
Summary of the invention
The present invention seeks to development can integrated enhanced AlGaN/GaN high tension apparatus; Monolithic power is integrated on the III-nitride to realize high pressure enhanced AlGaN/GaN device, high pressure AlGaN/GaN Schottky diode and low-voltage device (enhancement mode low-voltage device, depletion type low-voltage device), satisfies frequency and is higher than MHz, high temperature, high-tension special applications.
The present invention adopts following technical scheme for realizing above-mentioned purpose:
The gallium nitrate based GaN power integrated circuit of the present invention manufacturing process comprises the steps:
1) preparation is cleaned silica-based in the AlGaN/GaN of substrate wide-band gap material sample;
2) form mesa isolation structure;
3) autoregistration forms the source leakage ohmic contact of HEMTs device;
4) autoregistration forms the Ni/Au metal gate of enhancement mode HEMTs device;
5) autoregistration forms the Ni/Au metal gate of depletion type HEMTs device;
6) PECVD low-and high-frequency alternating deposition growth SiN dielectric layer, the active area of protection device;
7) depositing metal trace layer realizes the electrical connection between the device.
Preferably, the said low-resistance silicon substrate of the step 1) 2.5um GaN/20nm AlGaN wide-band gap material of growing successively utilizes the Resurf electric charge to share, and improves the laterally withstand voltage of AlGaN/GaN HEMTs high tension apparatus.
Preferentially, the described AlGaN layer thickness of step 1) is 20nm, and Al percentage is 20%.AlGaN is divided into 3 layers from the bottom to top successively, and thickness is the not doped with Al GaN barrier layer of 2nm, and thickness is that the silicon doping concentration of 15nm is 3 * 10 18Cm -3The AlGaN doped layer, thickness is the not doped with Al GaN separator of 3nm.The sandwich structure design of AlGaN layer can guarantee that electronic device has higher electron concentration and bigger transport velocity.
Preferentially, the described autoregistration RIE of step 4) plasma etching CF 4, the employing energy is 120 ~ 150W, and etch period is 130 ~ 150s, and final AlGaN layer under the Ni/Au metal gate forms surface density and is about 1 * 10 19Cm -2--Negative electrical charge F -Ion.
Preferably, the described high pressure enhancement mode of step 4) HEMTs adopts the interdigital layout design, and device drift region is 5 ~ 15um, wherein source field plate L FpLength be that 3 ~ 6um is advisable.
Preferably, the described SiN complex media of step 6) layer thickness is 0.3 ~ 0.35um, and the SiN dielectric layer refraction coefficient that is used alternatingly the growth of low-and high-frequency 13.56MHz/384KHz frequency source is 2 ~ 2.09, and tensile stress is in the 1.65MPa.
The present invention compares with the silica-based power semiconductor of main flow, and its superiority shows as following characteristics:
(1) GaN basis set of the present invention becomes processing step simple; And have than body silicon-more excellent power factor of high pressure BCD technology; And satisfy special applications such as high temperature, high pressure and high reliability, be expected to become the new technology of new industries such as new forms of energy, mixed motivity type automobile power source.
(2) gallium nitride material extension of the present invention is on low-resistance silica-base material substrate; Not only utilize Resurf structure realization electric charge to share; The surface field and the drift region length that has shortened device of device have been reduced; And silicon substrate thermal conductivity (150 W/Km) is much better than the thermal conductivity (40 W/Km) of Sapphire Substrate, helps the quick heat radiating and the reliability that improves high tension apparatus of chip.
(3) the present invention adopts RIE autoregistration lithographic technique, only forms electronegative F in the AlGaN barrier layer under metal gate Ni/Au -Ion distribution, the electron concentration of neutralization modulation metal gate raceway groove the inside obtains threshold voltage V ThAlGaN/GaN enhancement device greater than zero.
(4) the present invention adopts the source field plate, can reach to share voltage that is born at metal gate Ni/Au edge and the dual purpose that high tension apparatus drift region electric field is optimized, and further shield Miller capacitance effectively C GdTo the influence of device frequency response, satisfy the application that high frequency power drives.
(5) low-and high-frequency PECVD dielectric layer deposited SiN of the present invention reduces the additional stress that dielectric layer produces device, reduces AlGaN/GaN HEMTs device surface reverse leakage current.
(6) monolithic gallium nitride power circuit of the present invention has realized that the chip integration of two kinds of high tension apparatus of enhanced AlGaN/GaN HEMTs and AlGaN/GaN SBD becomes, and satisfies the application demand of high frequency, hot operation.
Description of drawings
Fig. 1 is the comparison in puncture voltage, temperature characterisitic of Si, SiC and three kinds of semiconductor power electronic devices of GaN;
Fig. 2 is the gallium nitrate based power integrated circuit technique platform of GaN of the present invention;
Fig. 3 is source field plate structure AlGaN/GaN HEMTs device (a) vertical view, (b) profile and (c) the grid below channel region of two kinds of devices of depletion type/enhancement mode can be with distribution map;
Fig. 4 is enhancement mode/exhaust sexual type AlGaN/GaN HEMTs device property contrast (a) transfer characteristic, (b) output characteristic and (c) the forward and reverse characteristic of grid;
Fig. 5 be enhanced AlGaN/GaN HEMTs breakdown characteristic of device with the puncture voltage of (b) HEMTs device with L GDWith L FPVariation relation;
Fig. 6 is the Electric Field Distribution analog result that field plate and two kinds of devices of no field plate structure are arranged;
Fig. 7 is the graph of a relation of enhanced AlGaN/GaN HEMTs device electric breakdown strength and conduction resistance;
Fig. 8 is the relation of puncture voltage and conduction resistance in the power electronic device of different materials preparation;
Fig. 9 is the microwave property of enhanced AlGaN/GaN HEMTs device;
Figure 10 is that grid width is the direct current of the power AlGaN/GaN device of 1mm, exchanges and transient response;
Figure 11 is the forward characteristic and the reverse characteristic of high pressure AlGaN/GaN SBD device;
Figure 12 is gallium nitrate based transient test circuit of monolithic and transient waveform figure.
Embodiment
Below in conjunction with accompanying drawing and instance the gallium nitrate based process exploitation of the GaN that the present invention relates to and the chip design of boosting are further specified.
Fig. 2 has set forth the gallium nitrate based technique platform of using as power electronics of low-resistance silicon substrate, and main devices comprises enhancement mode/depletion type HEMTs low voltage transistor, enhancement mode HEMTs high tension apparatus, AlGaN/GaN SBD high pressure Schottky diode.Enhancement mode/depletion type HEMTs low-voltage device provides the self-shield measuring ability mainly as logic control with for chip in the HVICs chip.Enhancement mode HEMTs device and AlGaN SBD high pressure Schottky diode are mainly realized the purpose of Power Conversion.MESA mesa-isolated technology is adopted in the high-low pressure zone.The gallium nitride manufacturing process comprises that mainly inductive couple plasma etching apparatus STS-RIE etching forms mesa isolation structure; Autoregistration evaporation Ti/Al/Ni/Au multiple layer metal and RTA rapid thermal annealing, the negative pole of ohmic contact and high pressure Schottky diode is leaked in the source that forms the HEMTs device; Autoregistration RIE plasma etching and electron beam evaporation metal Ni/Au and furnace annealing renovation technique, the Ni/Au metal gate of formation enhancement mode HEMTs device; Autoregistration electron beam evaporation metal Ni/Au and gate figure stripping technology form the Ni/Au metal gate of exhaustive device and the positive pole of high pressure Schottky diode; PECVD low-and high-frequency 13.56MHz/384KHz replaces the SiN compound medium layer of low-temperature epitaxy low stress, covering device active area; Electron beam evaporation metal Ni/Au is as the metal lead wire of device and the source metal field plate of high pressure HEMTs device.
Fig. 3 (a) (b) (c) has set forth source field plate structure AlGaN/GaN HEMTs device (a) vertical view, (b) profile respectively and can be with distribution map with (c) the grid below channel region of two kinds of devices of depletion type/enhancement mode.Adopt software Sentaurus-ISE to be directed against by CF 4The channel region of plasma bombardment is simulated.Analog result shows that the surface density in being present in the AlGaN layer is about 1 * 10 19Cm -2Electronegative polarity F-ion has been raised the energy level of grid below and has been about 1eV, makes the conduction band at raceway groove place be higher than Fermi level, and device becomes enhancement mode from depletion type.
Fig. 4 (a) (b) (c) has compared the transfer characteristic of enhancement mode/depletion-mode AlGaN/GaN HEMTs device, the forward and reverse characteristic of output characteristic and grid.Be arranged in the fixed charge F of metal gate Ni/Au below AlGaN barrier layer -Negative electricity polarity has exhausted the electronics in the raceway groove, and being device threshold voltage brings up to 0.5V from about-2V, and device becomes one of key factor of enhancement mode from depletion type.In addition, F -Anion has been raised the barrier height of metal gate, also makes the grid leakage current of device reduce by 6 one magnitude.Be the threshold voltage of balance device, these three parameters of forward current and reverse leakage current, plasma CF4 modulation technique needs key parameters such as accurate optimization etching RF frequency, power and time.
Fig. 5 set forth device electric breakdown strength and leakage current with L GDWith L FPChanging Pattern.Whether decision device punctures with reverse leakage current 1mA/mm is standard.For the device of no field plate structure, when L GDBe respectively 5um, when 10um and 15um, puncture voltage is respectively 73V, 217V and 390V.For field plate L FPBe the device of 3um, the puncture voltage of above-mentioned three kinds of devices is respectively 115V, 410V and 475V.When field plate length L FPAfter surpassing 3um, device electric breakdown strength slightly descends owing to the distance between field plate and the leakage is shortened beginning.It is worth noting; Low temperature depositing thickness is that the quality of 300nm silicon nitride SiN dielectric layer also is one of reason that influences puncture voltage; We adopt PECVD low-and high-frequency 13.56MHz/384KHz alternating growth gross thickness to be about the SiN thickness of insulating layer of 0.3 ~ 0.35um for this reason, to reduce the tracking current of device.
Fig. 6 comparative simulation the distribution situation device of field plate and no field plate device electric fields is arranged, the result shows the device for no field plate structure, the electric field at Schottky gate edge reaches the critical breakdown electric field of GaN material, is about 3MV/cm; To field plate length L FPBeing the device of 3um, is the electric field of 1.5MV/cm although intensity has appearred in 6um position, panel edges on the scene place, and the electric field at grid edge obviously is lowered, and electric field strength is about 1MV/cm, and the highfield at grid edge is discharged effectively.This can improve F under the grid widely -The stability of anion has strengthened the reliability of this enhanced AlGaN/GaN HEMTs device and has prolonged useful life.In addition, near the high electric field the drain electrode still is worth showing great attention to, and can adopt the back grid structure of silica-based/GaN epitaxial loayer to eliminate this high electric field.
Fig. 7 has set forth the puncture voltage of device and the relation of conduction resistance, and the device active region area is used to the calculating device conduction resistance.The result shows field plate structure when improving device electric breakdown strength effectively, has dwindled the device active region area and has made device obtain lower conduction resistance.In addition, for L GDWith L FPBe respectively the device of 15um and 3um, Δ V Ds/ Δ V Gs≈ 190 shows that this device has good low voltage gate control high voltage capability, can be fit to the application of high-voltage power electronics.
Fig. 8 has set forth the puncture voltage of high-voltage power HEMTs device and super-junction structure Si-LDMOS and the comparison of conduction resistance.Be about two kinds of devices of 500V for puncture voltage, SLOP-LDMOS device conduction resistance is 96 m Ω cm 2, the conduction resistance of enhanced AlGaN/GaN HEMTs device is very low, is merely 2.9 m Ω cm 2, the latter is lower 30 times than the former.By power FOM=BV 2/ R On, spCan know that FOM is big more, and the expression device has stronger power characteristic.Compare with above-mentioned Si-LDMOS device; The FOM of enhanced AlGaN/GaN HEMTs device is maximum; The FOM value is 77.8; This HEMTs device that further shows gallium nitride GaN base than silicon-based devices in field of power electronics advantage more, especially in the power electronics applications of puncture voltage greater than 500V even KV magnitude.
Fig. 9 has set forth the high-frequency parameter of enhanced AlGaN/GaN high tension apparatus f TWith f MAXWith V GsVariation.By
Figure 2012100038137100002DEST_PATH_IMAGE002
Can know that device drift region length L GD increases can not reduce characteristic frequency f T, three kinds of devices V GsDuring approximately greater than 0.5 volt, f TAll be about 2GHz.On the other hand, f MAXTest result shows to be worked as V GsSlightly 0.5 volt the time, when the drift length of device is increased to 15um from 5um, f MAXTo slightly descend, and be less than about 10GHz, this explanation accounts for main component in total conducting resistance drift zone resistance is the major reason of limiting device power output.Enhanced AlGaN/GaN HEMTs device has good high frequency characteristics to mean that it is used for the high frequency power switch and will has a switching loss lower than silicon device.
It is AC, DC and the transient test result of the enhanced AlGaN/GaN HEMTs power tube of 1mm that Figure 10 has set forth to grid width.Device AC and DC test result are comparatively identical.When V GsWhen equaling 3V, the forward current of device is near 90mA.Device transient test result reflects the transient state forward current a little less than the test result from AC and DC, and this comes from and in the AlGaN layer, exists defective in higher surface state of density and the body, and they have the characteristic that receives main trap, are easier to capture the electronics in the raceway groove.In addition, the knee-point voltage of AlGaN/GaN device is lower, and its value is about 2V, and far below the LDMOS of super-junction structure, this shows that the HEMTs device has lower conduction loss, so enhanced AlGaN/GaN HEMTs is highly suitable for the application of field of power electronics.
Figure 11 has described the forward characteristic and the reverse characteristic of AlGaN/GaN SBD high tension apparatus.SBD forward conduction voltage is 0.6V.In addition, for the SBD device that withstand voltage zone length is merely 10um, the voltage that device bears just can reach 400V, therefore can realize that enhanced AlGaN/GaN HEMTs device becomes with the chip integration of AlGaN/GaN SBD device, satisfies the application of power drive.
Figure 12 has set forth gallium nitrate based transient test circuit of monolithic and transient waveform; Wherein often pass type AlGaN/GaN HEMTs and AlGaN/GaN SBD high pressure Schottky diode monolithic are integrated, often are electrically connected in the positive plate of the drain electrode of pass type AlGaN/GaN HEMTs and AlGaN/GaN SBD high pressure Schottky diode.In order to reduce R Sp onA Rea, layout design has adopted the interdigital design and has combined the withstand voltage technology in knot terminal.Can know that from oscillogram the conducting of gallium nitride power chip and turn-off time are very short, are about about 20nm.V wherein SW, Vg, I SWBe passage 1,2,4.
Help to show modification and realize that additional background information is found in following document.These documents are incorporated into citation form.
[1]?S.G.?Nassif-Khalil?and?C.A.?T.?Salama,?“Super-junction?LDMOS?on?a?silicon-on-sapphire?substrate,”?IEEE?Electron?Device?Lett,?2003;?50(5):1385-1391.
[2]?M.?Rub,?M.?Bar,?G.?Deml,?et?al,?“A?600?V?8.7?Ω mm 2?lateral?superjunction?transistor,”?in?Proc.?ISPSD,?2006:305-308.
[3]?B.?Zhang,?W.?L.?Wang,?W.?J.?Chen,?et?al.,?“High-Voltage?LDMOS?With?Charge-Balanced?Surface?Low?On-Resistance?Path?Layer,”?IEEE?Electron?Device?Lett,?2009;?30(8):?849-851.
[4] Huang Wei, Wang Sheng, Zhang Shudan, Xu Juyan, " height that is used for Power Conversion punctures enhanced AlGaN/GaN HEMTs, " solid electronics research and progress, 2010 30 (3): 463-467.

Claims (8)

1. a gallium nitrate based GaN power integrated circuit manufacturing process is characterized in that comprising the steps:
Prepare to clean the AlGaN/GaN wide-band gap material sample of silicon substrate;
Adopt inductive couple plasma etching apparatus STS-RIE, the thickness 20nm that anisotropic etching comprises the two-dimensional electron gas passage is about the AlGaN layer, forms mesa isolation structure;
Autoregistration electron beam evaporation Ti/Al/Ni/Au multiple layer metal, the source leakage graphicization is peeled off the rapid thermal annealing with RTA, and the negative pole of ohmic contact and high pressure Schottky diode is leaked in the source that forms the HEMTs device;
Autoregistration RIE plasma etching and electron beam evaporation metal Ni/Au and furnace annealing renovation technique, the Ni/Au metal gate of formation enhancement mode HEMTs device;
Autoregistration electron beam evaporation metal Ni/Au, gate figureization is peeled off, and forms the Ni/Au metal gate of exhaustive device and the positive pole of high pressure Schottky diode;
PECVD low-and high-frequency 13.56MHz/384KHz replaces the SiN compound medium layer of low-temperature epitaxy low stress, covering device active area;
Electron beam evaporation metal Ni/Au is as the metal lead wire of device and the source metal field plate of high pressure HEMTs device.
2. gallium nitrate based GaN power integrated circuit manufacturing process according to claim 1; It is characterized in that the described low-resistance rate of step 1) is the wide-band gap material sample of 2.5um GaN/20nm AlGaN greater than epitaxial growth thickness on the P type silicon substrate film of 10k Ω cm; Utilize the Resurf electric charge to share, improve the laterally withstand voltage of AlGaN/GaN HEMTs high tension apparatus.
3. gallium nitrate based GaN power integrated circuit manufacturing process according to claim 1; It is characterized in that step 1) thickness is that 20nm and Al percentage are that 20% AlGaN is divided into 3 layers from the bottom to top successively; Thickness is the not doped with Al GaN barrier layer of 2nm, and thickness is that the silicon doping concentration of 15nm is 3 * 10 18Cm -3The AlGaN doped layer, thickness is the not doped with Al GaN separator of 3nm; The sandwich structure design of AlGaN layer can guarantee that higher electron concentration and bigger transport velocity are arranged in the electronic device heterojunction.
4. gallium nitrate based GaN power integrated circuit manufacturing process according to claim 1 is characterized in that step 4) autoregistration RIE plasma etching, and the employing energy is 120 ~ 150W, and etch period is 130 ~ 150s; Furnace annealing is repaired, and adopts 400 ~ 425 ℃, and be 9 ~ 10min repair time.
5. gallium nitrate based GaN power integrated circuit manufacturing process according to claim 1, the domain structure that it is characterized in that high pressure HEMTs device is an interdigital, source grid spacing L Gs, the long L of grid g, grid width W g, grid leak spacing L GdBe respectively 0.8um ~ 1um, 0.8 ~ 1um, 1 ~ 1.2mm, 5 ~ 15um.
6. gallium nitrate based GaN power integrated circuit manufacturing process according to claim 5 is characterized in that the source field plate length of high pressure HEMTs device L Fp, be 3 ~ 6um.
7. gallium nitrate based GaN power integrated circuit manufacturing process according to claim 6 is characterized in that step 6) adopts the PECVD deposition temperature to be controlled at 275 +In 10 ℃, height frequency 13.56MHz/384KHz alternating growth gross thickness is about the SiN thickness of insulating layer of 0.3 ~ 0.35um, reduces the tracking current of device.
8. gallium nitrate based GaN power integrated circuit manufacturing process according to claim 1 is characterized in that step 7) metal lead wire Ni/Au can realize the enhancement mode HEMTs device and the AlGaN/GaN SBD Schottky high-voltage diode monolithic power integrated circuit of interdigital structure.
CN2012100038137A 2012-01-09 2012-01-09 Process for manufacturing gallium nitride-base GaN power integrated circuit Pending CN102543871A (en)

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Publication number Priority date Publication date Assignee Title
CN104916685A (en) * 2015-06-24 2015-09-16 无锡晶凯科技有限公司 Silicon-based GaN HEMTs longitudinal power device and manufacturing method thereof
CN109742143A (en) * 2018-12-29 2019-05-10 苏州汉骅半导体有限公司 Integrated enhanced and depletion type HEMT and its manufacturing method

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Application publication date: 20120704