CN102420247A - Group-III nitride HEM (High Electron Mobility Transistor) device - Google Patents
Group-III nitride HEM (High Electron Mobility Transistor) device Download PDFInfo
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- CN102420247A CN102420247A CN2011103670707A CN201110367070A CN102420247A CN 102420247 A CN102420247 A CN 102420247A CN 2011103670707 A CN2011103670707 A CN 2011103670707A CN 201110367070 A CN201110367070 A CN 201110367070A CN 102420247 A CN102420247 A CN 102420247A
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Abstract
The invention discloses a Group-III nitride HEM (High Electron Mobility Transistor) device which comprises a source electrode, a drain electrode, a main grid, an auxiliary grid, an insulating dielectric layer and a heterojunction structure; the source electrode and the drain electrode are electrically connected through two-dimension electron gas formed in the heterojunction structure; the heterojunction structure comprises a first semiconductor and a second semiconductor; the second semiconductor is formed on the surface of the first semiconductor and is provided with a band gap wider than the first semiconductor; the first semiconductor is arranged between the source electrode and the drain electrode; the main grate is arranged on the surface of the second semiconductor near one side of source electrode and is in schottky contact with the second semiconductor; the dielectric layer is formed on the second semiconductor and the surface of the main grid and is arranged between the source electrode and the drain electrode; the auxiliary grid is formed on the surface of the dielectric layer; at least one side edge of the auxiliary grid is extended toward the direction of the source electrode or the drain electrode; meanwhile, an orthographic projection of the auxiliary grid are overlapped with two side edges of the main grate. The Group-III nitride HEM device can fundamentally and effectively inhibit 'Current Collapse Effect'.
Description
Technical field
(High Electron Mobility Transistor HEMT), relates in particular to a kind of III group-III nitride HEMT device to the present invention relates to a kind of HEMT.
Background technology
When the HEMT device adopts the III group-III nitride semiconductor, because piezoelectric polarization and spontaneous polarization effect, on heterostructure (Heterostructure),, can form the two-dimensional electron gas of high concentration like AlGaN/GaN.In addition, the HEMT device adopts the III group-III nitride semiconductor, can obtain very high insulation breakdown electric field strength and good high-temperature stability.HEMT with III group-III nitride semiconductor of heterostructure not only can be used as high-frequency element and uses, and be applicable to high voltage the device for power switching of big electric current.
When existing III group-III nitride semiconductor HEMT device uses as high-frequency element or high voltage switch device; The drain electrode output current does not often catch up with the variation of grid control signal; The big situation of conducting transient delay can appear; " the current collapse phenomenon " that this is III group-III nitride semiconductor HEMT device having a strong impact on the practicality of device.Existing explanation to " current collapse phenomenon " of relatively generally acknowledging is " an empty bar phantom "." empty bar phantom " think when device closes off-state, have electronics to be injected into semiconductor surface, thereby formed electronegative empty grid by surface state or defect capture; Electronegative empty grid are because the electrostatic induction meeting reduces the channel electrons of grid leak, bonding pad, grid source; When device changed from closing off-state guide on-state, though the raceway groove under the grid can accumulate a large amount of electronics very soon, empty grid electric charge but can not in time discharge; Channel electrons concentration under the empty grid is lower; So the drain terminal output current is less, have only after empty grid electric charge fully discharges, the drain terminal electric current just can return to the level of dc state.At present, the method for inhibition " current collapse " commonly used has: semiconductor is carried out surface treatment, reduce surface state or interface state density; Reduce the electric field strength of gate electrode through field plate structure, reduce electronics, suppress current collapse by the probability of defect capture near drain electrode one end.But this type of method effect under big electric current, big voltage condition that suppresses current collapse is unsatisfactory.
Summary of the invention
The objective of the invention is to propose a kind of III group-III nitride HEMT (High Electron Mobility Transistor; HEMT) device; This device has the lamination double-gate structure; It is regulated and control two-dimensional electron gas in the raceway groove by cooperatively interacting of secondary grid and main grid, makes HEMT device drain terminal output current can get caught up in the variation of gate voltage, and then fundamentally suppresses " current collapse effect ".
For realizing the foregoing invention purpose, the present invention has adopted following technical scheme:
A kind of III group-III nitride HEMT device; Comprise source electrode, drain electrode and heterostructure, said source electrode is electrically connected through the two-dimensional electron gas that is formed in the heterostructure with drain electrode, and said heterostructure comprises first semiconductor and second semiconductor; Said first semiconductor is arranged between source electrode and the drain electrode; Said second semiconductor is formed at first semiconductor surface, and has and be wider than the first semi-conductive band gap, it is characterized in that; Said HEMT device also comprises main grid, insulating medium layer and secondary grid, wherein:
Said main grid is arranged at second semiconductor surface near source electrode one side, and contacts with second semiconductor formation Xiao Jite;
Said dielectric layer is formed at second semiconductor and main grid surface, and is arranged between said source electrode and the drain electrode;
Said secondary grid are formed at the dielectric layer surface, and its at least one lateral edges extends to source electrode or drain electrode direction, and its orthographic projection simultaneously and main grid both sides of the edge all overlap.
Said source electrode is connected with high potential with the electronegative potential of power supply respectively with drain electrode.
Said first semiconductor and second semiconductor equalizing adopt the III group-III nitride semiconductor.
Extend to source electrode and drain electrode direction respectively the both sides of the edge of said secondary grid, perhaps, also can be that said secondary grid only have a lateral edges to extend to corresponding source electrode or drain electrode direction.
When said HEMT device was worked, said main grid and secondary grid were respectively by control signal control, and when said HEMT device was handled conducting state, the current potential of said secondary grid-control system signal was higher than the current potential of main grid control signal.
Description of drawings
Fig. 1 is the cross-sectional view of lamination double grid HEMT of the present invention;
Fig. 2 a is the partial structurtes sketch map of common HEMT device;
Fig. 2 b is the partial structurtes sketch map of lamination double grid HEMT device of the present invention;
Fig. 3 is the structural representation of HEMT device in the present invention's one preferred embodiments, and wherein secondary grid respectively have extension to leakage and source electrode direction;
Fig. 4 is the structural representation of HEMT device in another preferred embodiments of the present invention, and wherein secondary grid only have extension to the drain electrode direction.
Embodiment
Consult Fig. 2 a; The reason of common HEMT device (is example with the AlGaN/GaN device) current collapse phenomenon is: under the device off state; Can accumulate negative electrical charge at grid metal 4 both sides AlGaN layers 3 at the interface with insulating medium layer 6 and form negative electrical charge accumulation area 21; Because electrostatic induction effect, these negative electrical charges can reduce even exhaust fully the two-dimensional electron gas of below channel region again, form raceway groove depletion region 22.When the grid voltage rising, when device was changed from closing off-state guide on-state, grid below two-dimensional electron gas received grid voltage control and rises; Grid below turn, but the negative electrical charge of interface charge accumulation area is owing to be in than deep energy level and can not in time disengage, and therefore the two-dimensional electron gas in the raceway groove of below still is less; So device conducting fully, along with the time increases, the negative electrical charge of interface charge accumulation area discharges from deep energy level gradually; Electron concentration rises in its below raceway groove; Device changes to complete conducting gradually, and according to present result of study, negative electrical charge reaches the magnitude of microsecond～second from the time that deep energy level discharges.
For overcoming the defective of aforementioned common HEMT device; The present invention proposes a kind of III group-III nitride HEMT device with lamination double-gate structure, consult Fig. 1, source electrode 7, the drain electrode 8 of this device are positioned at both sides; Near second semiconductor 3 of source electrode 7 one sides (as; The AlGaN layer) there is a gate electrode on the surface, is called main grid 4, and there is an insulating medium layer 6 the main grid top (like Si
3N
4), there is another gate electrode the insulating medium layer top, is called secondary grid 5.As shown in Figure 1, secondary grid are positioned at the top of main grid, on vertical plane, with the main grid both sides of the edge overlapping are arranged, and to source, drain electrode certain extension are arranged.Aforementioned first semiconductor 2 (like the GaN layer) can be located at (like sapphire, carborundum and silicon etc.) on the substrate 1.
Consult Fig. 2 b; Under lamination double grid HEMT device off state of the present invention; Main grid 4 is biased in below the threshold voltage, adds a sufficiently high positive bias on the secondary grid 5, though main grid metal both sides second semiconductor 3 can accumulate negative electrical charge (forming negative electrical charge accumulation area 21) at the interface equally with insulating medium layer 6; Because sufficiently high forward biased effect on the secondary grid; The interface negative electrical charge can not shield secondary grid electric field fully, has enough electric fields two-dimensional electron gas in the channel region that goes to induct, and keeps electric charge accumulating region below turn (forming turn district 23); When the rising of main grid voltage, when device changed from closing off-state guide on-state, secondary gate voltage remained unchanged, the still conducting of raceway groove of interface charge accumulation area below, so device can not produce the delay that current collapse causes.
If device works in on-off mode; The type of drive of lamination double grid HEMT device then of the present invention can be taked: main grid and secondary grid are added synchronous pulse signal respectively; Secondary gate voltage is higher than main grid voltage; When device changed from closing off-state guide on-state, the high voltage of secondary grid can overcome the shielding of interface negative electrical charge and thereunder force to generate enough two-dimensional electron gas, has avoided current collapse.It should be noted that the biasing of secondary grid can be independent of main grid when closing off-state, therefore select the biasing of secondary grid under the suitable pass off-state, device can obtain preferable puncture voltage.
More than technical scheme of the present invention is summarized; For can more being known, the public understands technological means of the present invention; And can implement according to the content of specification, below be that example is further described technical scheme of the present invention with device based on the AlGaN/GaN heterojunction.
Consult Fig. 3, as a preferred embodiment of the present invention, this HEMT has: first semiconductor 13 (GaN) and be formed on second semiconductor 14 (AlGaN) on first semiconductor 13.First semiconductor 13 specially mixes.In second semiconductor 14, can mix n type impurity, also can not mix.The band gap of second semiconductor 14 is wideer than the band gap of first semiconductor 13.The thickness of second semiconductor 14 is about 15 to 30nm.First semiconductor 13 and second semiconductor 14 form heterostructure, are forming two-dimensional electron gas (2DEG) at the interface.
This HEMT has the drain electrode 11 and source electrode 12 by the spacing distance configured separate.Drain electrode 11 runs through second semiconductor 14 with source electrode 12 and extends to first semiconductor 13, is connected with two-dimensional electron gas in the raceway groove.Drain electrode 11 is to form ohmic contact by multiple layer metal (as: Ti/Al/Ti/Au or Ti/Al/Ni/Au etc.) through quick high-temp annealing with source electrode 12.
Further, this HEMT has major and minor double-gate structure, and main grid 16 is manufactured between source electrode and the drain electrode, and near an end of source electrode, main grid 16 directly contacts with second semiconductor, 14 surfaces, and forms Schottky contacts.Secondary grid 18 are arranged on insulating medium layer 17 (like Si
3N
4) on, with main grid overlapping is arranged in vertical direction, and extension (perhaps, only extend to drain electrode or source electrode direction, shown in Figure 4 is that secondary grid only extend to the drain electrode direction) is respectively arranged to source, drain electrode direction.
The operation principle of this HEMT is following: because of the band gap width of second semiconductor 14 band gap width greater than first semiconductor 13; On the heterojunction boundary of first semiconductor 13 and second semiconductor 14, form two-dimensional electron gas layer (2DEG), this two-dimensional electron gas layer (2DEG) is present in a side of first semiconductor 13 of heterojunction boundary.
When adding high potential on the main grid 16, two-dimensional electron gas is higher in the raceway groove, and device is in opening; When adding electronegative potential on the main grid 16, two-dimensional electron gas is exhausted in the raceway groove, and device is in closed condition; So can be through the current potential on the main grid 16 be controlled, control main grid 16 times the two-dimensional electron gas in the corresponding raceway groove, thereby the on off state of control device raceway groove.
The foregoing description is merely explanation technical conceive of the present invention and characteristics, and its purpose is to let the personage who is familiar with this technology can understand content of the present invention and enforcement according to this, can not limit protection scope of the present invention with this.All equivalences that spirit is done according to the present invention change or modify, and all should be encompassed within protection scope of the present invention.
Claims (6)
1. III group-III nitride HEMT device; Comprise source electrode, drain electrode and heterostructure, said source electrode is electrically connected through the two-dimensional electron gas that is formed in the heterostructure with drain electrode, and said heterostructure comprises first semiconductor and second semiconductor; Said first semiconductor is arranged between source electrode and the drain electrode; Said second semiconductor is formed at first semiconductor surface, and has and be wider than the first semi-conductive band gap, it is characterized in that; Said HEMT device also comprises main grid, insulating medium layer and secondary grid, wherein:
Said main grid is arranged at second semiconductor surface near source electrode one side, and contacts with second semiconductor formation Xiao Jite;
Said dielectric layer is formed at second semiconductor and main grid surface, and is arranged between said source electrode and the drain electrode;
Said secondary grid are formed at the dielectric layer surface, and its at least one lateral edges extends to source electrode or drain electrode direction, and its orthographic projection simultaneously and main grid both sides of the edge all overlap.
2. III group-III nitride HEMT device according to claim 1 is characterized in that, said source electrode is connected with high potential with the electronegative potential of power supply respectively with drain electrode.
3. III group-III nitride HEMT device according to claim 1 is characterized in that, said first semiconductor and second semiconductor equalizing adopt the III group-III nitride semiconductor.
4. III group-III nitride HEMT device according to claim 1 is characterized in that, extend to source electrode and drain electrode direction respectively the both sides of the edge of said secondary grid.
5. III group-III nitride HEMT device according to claim 1 is characterized in that, said secondary grid only have a lateral edges to extend to corresponding source electrode or drain electrode direction.
6. III group-III nitride HEMT device according to claim 1; It is characterized in that; When said HEMT device is worked; Said main grid and secondary grid are respectively by control signal control, and when said HEMT device was in conducting state, the current potential of said secondary grid-control system signal was higher than the current potential of main grid control signal.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110367070 CN102420247B (en) | 2011-11-18 | 2011-11-18 | Group-III nitride HEM (High Electron Mobility Transistor) device |
| PCT/CN2012/001552 WO2013071699A1 (en) | 2011-11-18 | 2012-11-16 | Group iii nitride hemt device |
| US14/357,911 US9070756B2 (en) | 2011-11-18 | 2012-11-16 | Group III nitride high electron mobility transistor (HEMT) device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201110367070 CN102420247B (en) | 2011-11-18 | 2011-11-18 | Group-III nitride HEM (High Electron Mobility Transistor) device |
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| CN102420247A true CN102420247A (en) | 2012-04-18 |
| CN102420247B CN102420247B (en) | 2013-10-30 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102856372A (en) * | 2012-09-28 | 2013-01-02 | 中国科学院苏州纳米技术与纳米仿生研究所 | Packaging structure of double-grid four-end III-group nitride enhanced type high electron mobility transistor (HEMT) device |
| CN102856371A (en) * | 2012-09-28 | 2013-01-02 | 中国科学院苏州纳米技术与纳米仿生研究所 | Novel dual-grid three-terminal III-nitride enhanced type HEMT (High Electron Mobility Transistor) device |
| WO2013071699A1 (en) * | 2011-11-18 | 2013-05-23 | 中国科学院苏州纳米技术与纳米仿生研究所 | Group iii nitride hemt device |
| CN106531789A (en) * | 2015-09-11 | 2017-03-22 | 中国科学院苏州纳米技术与纳米仿生研究所 | Method for achieving enhanced HEMT through polarity control and enhanced HEMT |
| WO2017190643A1 (en) * | 2016-05-06 | 2017-11-09 | 杭州电子科技大学 | Novel iii-v heterostructure field effect transistor |
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| CN1950945A (en) * | 2004-05-11 | 2007-04-18 | 美商克立股份有限公司 | Wide bandgap transistors with multiple field plates |
| US20070235775A1 (en) * | 2006-03-29 | 2007-10-11 | Cree, Inc. | High efficiency and/or high power density wide bandgap transistors |
| JP2008130672A (en) * | 2006-11-17 | 2008-06-05 | Furukawa Electric Co Ltd:The | Nitride-based semiconductor heterojunction field effect transistor |
| CN102074576A (en) * | 2009-10-30 | 2011-05-25 | 万国半导体股份有限公司 | Normally-off gallium nitride field effect transistor |
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Patent Citations (4)
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| CN1950945A (en) * | 2004-05-11 | 2007-04-18 | 美商克立股份有限公司 | Wide bandgap transistors with multiple field plates |
| US20070235775A1 (en) * | 2006-03-29 | 2007-10-11 | Cree, Inc. | High efficiency and/or high power density wide bandgap transistors |
| JP2008130672A (en) * | 2006-11-17 | 2008-06-05 | Furukawa Electric Co Ltd:The | Nitride-based semiconductor heterojunction field effect transistor |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013071699A1 (en) * | 2011-11-18 | 2013-05-23 | 中国科学院苏州纳米技术与纳米仿生研究所 | Group iii nitride hemt device |
| US9070756B2 (en) | 2011-11-18 | 2015-06-30 | Suzhou Institute Of Nano-Tech And Nano-Bionics Of Chinese Academy Of Sciences | Group III nitride high electron mobility transistor (HEMT) device |
| CN102856372A (en) * | 2012-09-28 | 2013-01-02 | 中国科学院苏州纳米技术与纳米仿生研究所 | Packaging structure of double-grid four-end III-group nitride enhanced type high electron mobility transistor (HEMT) device |
| CN102856371A (en) * | 2012-09-28 | 2013-01-02 | 中国科学院苏州纳米技术与纳米仿生研究所 | Novel dual-grid three-terminal III-nitride enhanced type HEMT (High Electron Mobility Transistor) device |
| CN102856371B (en) * | 2012-09-28 | 2015-08-05 | 中国科学院苏州纳米技术与纳米仿生研究所 | Novel double grid three end III group-III nitride enhancement mode HEMT device |
| CN102856372B (en) * | 2012-09-28 | 2015-12-09 | 中国科学院苏州纳米技术与纳米仿生研究所 | The encapsulating structure of double grid four end group III-nitride enhancement mode HEMT device |
| CN106531789A (en) * | 2015-09-11 | 2017-03-22 | 中国科学院苏州纳米技术与纳米仿生研究所 | Method for achieving enhanced HEMT through polarity control and enhanced HEMT |
| WO2017190643A1 (en) * | 2016-05-06 | 2017-11-09 | 杭州电子科技大学 | Novel iii-v heterostructure field effect transistor |
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