CN102543670A - Planarization method for PMD (Pre-Metal Dielectric) layer - Google Patents
Planarization method for PMD (Pre-Metal Dielectric) layer Download PDFInfo
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- CN102543670A CN102543670A CN2010105875001A CN201010587500A CN102543670A CN 102543670 A CN102543670 A CN 102543670A CN 2010105875001 A CN2010105875001 A CN 2010105875001A CN 201010587500 A CN201010587500 A CN 201010587500A CN 102543670 A CN102543670 A CN 102543670A
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- pmd
- ion
- medium layer
- metal medium
- flattening method
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Abstract
The invention discloses a planarization method for a PMD (Pre-Metal Dielectric) layer. The planarization method particularly comprises the following steps of: implanting ions with large dip angles to a PMD surface of the PMD layer with a convex and concave structure; and carrying out a planarization treatment on the PMD surface subjected to ion implantation by using a wet etching method. By virtue of the technical scheme of the invention, the planarization of the PMD surface can be implemented conveniently. The shortcoming that the surface of an appliance is scraped easily in a grinding process for the PMD layer by the traditional CMP (Chemical Mechanical Polishing) is overcome.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly a kind of flattening method of before-metal medium layer.
Background technology
In integrated circuit fabrication process, (Pre-Metal Dielectric PMD) is arranged between device and the interconnecting metal layer before-metal medium layer, as making device avoid the protective layer of magazine particle pollution.Usually, the constituent of before-metal medium layer is megohmite insulant SiO
2
In actual mechanical process, because the height fall of before-metal medium layer figure own, the uneven phenomenon that height rises and falls can appear in the final before-metal medium layer surface that forms.For example; On polysilicon gate during the plated metal front medium layer; Owing to have difference in height between grid and the substrate, as shown in Figure 1, therefore before plated metal behind the medium; This difference in height can entail the before-metal medium layer that is deposited, and makes the before-metal medium layer surface the uneven phenomenon that height rises and falls occur.
After forming before-metal medium layer, the photoetching needs for technologies such as subsequent interconnect must carry out planarization to the before-metal medium layer surface.At present normal adopt be the planarization technology be chemical mechanical polishing method (Chemical Mechanical Polishing, CMP).This technology is the combination technique of mechanical skiving and chemical corrosion; The patterned one side that forms before-metal medium layer on the wafer is pressed downwardly onto on the grinding pad; Under the effect of chemical grinding liquid; Relative motion through grinding head and grinding pad is carried out milled processed to the before-metal medium layer surface, finally obtains the surface texture of relatively flat.
Yet the CMP processing procedure is the higher technology of cost, and equipment cost is high; And belonging to the one chip implement, the device treatment effeciency is low, and; Since there is the polishing particles of high rigidity in the lapping liquid usually, therefore, in process of lapping; Easily device surface is caused scuffing, cause the device yields to reduce.
Summary of the invention
The present invention provides a kind of flattening method of before-metal medium layer, the defective that scratches with the device surface of avoiding existing CMP in to the before-metal medium layer process of lapping, to be prone to cause.
The invention provides a kind of flattening method of before-metal medium layer, comprising:
The high inclination-angle ion is carried out on before-metal medium layer PMD surface with convex-concave structure to be injected;
Planarization is carried out on PMD surface after the method for utilizing wet etching is injected ion.
Preferably, the injection inclination angle theta of said ion is 0～90 degree.
Preferably; The injection inclination angle theta of said ion is arctan (H1/L2)～arctan (H1/L3), and wherein, H1 is the height difference between said PMD male structure and the recessed structure; L2 is the spacing of said PMD bottom neighboring gates, and L3 is the spacing between the adjacent male structure of said PMD.
Preferably, said ion is BF
2, a kind of among P and the Ar.
Preferably, the injection energy range of said ion is 30～810Kev.
Preferably, the implantation dosage of said ion is 1E13～1E16atom/cm
2
Preferably, the component of said PMD is SiO
2
Preferably, the chemical corrosion liquid that said wet etching adopts is the mixed liquor of hydrofluoric acid and ammonium fluoride, perhaps is dilute hydrofluoric acid solution.
Preferably, said SiO
2Formation adopt chemical vapour deposition (CVD) or spin coating proceeding to form.
Compared with prior art, the present invention has the following advantages:
The flattening method of before-metal medium layer provided by the invention before planarization is carried out on the PMD surface, at first carries out the high inclination-angle ion to the PMD surface with convex-concave structure and injects; Shadow effect when utilizing the high inclination-angle ion to inject realizes the selectivity bombardment to convex-concave structure on the PMD surface, and ion is injected in convex configuration zone, PMD surface; Make the activity in male structure zone be higher than the activity of recessed structural region, increase the corrosion rate of male structure zone in chemical corrosion liquid greatly, therefore; Under the effect of chemical liquids corrosion, the male structure zone of injecting ion can obtain different corrosion rate difference with the recessed structural region that nonionic injects in the wet etching process, the recessed structural region that the corrosion rate in the male structure zone of injection ion is injected apparently higher than nonionic; Thereby be convenient to realize the planarization on PMD surface, and, owing to there is not the introducing of high rigidity polishing particles; The defective that can not cause device surface to scratch; In addition, wet etching is the multi-disc operation, makes production efficiency higher.
Description of drawings
Fig. 1 is the sketch map that the uneven phenomenon of height fluctuating appears in the PMD surface;
The flattening method schematic flow sheet of the before-metal medium layer that Fig. 2 provides for the embodiment of the invention;
Fig. 3 confirms in the embodiment of the invention that ion injects the sketch map at inclination angle;
Fig. 4 is the device profile sketch map behind the injection ion in the embodiment of the invention;
Fig. 5 is the device profile sketch map after the realization planarization in the embodiment of the invention.
Embodiment
For make above-mentioned purpose of the present invention, feature and advantage can be more obviously understandable, does detailed explanation below in conjunction with the accompanying drawing specific embodiments of the invention.
Processing method of the present invention can be widely used in the every field; And many suitable material capable of using; Be to explain below through concrete embodiment; Certainly the present invention is not limited to this specific embodiment, and the general replacement that the one of ordinary skilled in the art knew is encompassed in protection scope of the present invention far and away.
Secondly, the present invention utilizes sketch map to describe in detail, when the embodiment of the invention is detailed; For the ease of explanation; The profile of expression device architecture can be disobeyed general ratio and done local the amplification, should be with this as to qualification of the present invention, in addition; In the making of reality, should comprise the three dimensions size of length, width and the degree of depth.
The present invention proposes a kind of flattening method of new before-metal medium layer, with the defective that the device surface of avoiding existing CMP in to the before-metal medium layer process of lapping, to be prone to cause scratches, as shown in Figure 2, the step that this method embodiment comprises has:
Step 201, the high inclination-angle ion is carried out on the before-metal medium layer PMD surface with convex-concave structure inject.
PMD directly is deposited on the grid usually, because the difference in height between grid and the substrate, therefore, after the final formation of PMD, the uneven phenomenon that height rises and falls appears in the PMD surface.In integrated circuit fabrication process, along with constantly reducing of integrated circuit characteristic size, the increase gradually of the wiring number of plies needs each layer all to accomplish overall planarization.Otherwise; The atmosphere of wafer surface is more remarkable along with the increase of the wiring number of plies; So not only make with layer thickness of metal film unevenly, thin local resistance value is higher, causes electromigration easily and causes line short; Thick place may cause unnecessary conducting, and the reliability of circuit is reduced.And up-and-down surface can make can't accurately focus in photoetching, the serious restriction wiring number of plies, the serviceability of reduction integrated circuit.Therefore, the planarization of PMD is the basis that guarantees performance of integrated circuits.
In the embodiment of the invention, when planarization is carried out on uneven PMD surface, be not to utilize the CMP method, but utilize the method for wet etching.Before implementing wet etching,, at first the high inclination-angle ion is carried out on the PMD surface with convex-concave structure and inject in order to improve the speed of wet etching.Shadow effect when utilizing the high inclination-angle ion to inject; That is: convex configuration zone, PMD surface can be injected into ion; And recessed structural region can not be injected into ion or inject small amount of ionic owing to be blocked, after implementing the ion injection; The activity in convex configuration zone, PMD surface is higher than the activity of recessed structural region, increases the corrosion rate of male structure zone in chemical corrosion liquid greatly.
Planarization is carried out on PMD surface after step 202, the method for utilizing wet etching are injected ion.
Implement to begin wet etching is carried out on the PMD surface after the ion injection, realize the planarization on surface.Under the effect that chemical liquids is corroded in the wet etching process; The male structure zone of injecting ion can obtain different corrosion rate difference with the recessed structural region that nonionic injects, the recessed structural region that the corrosion rate in the male structure zone of injection ion is injected apparently higher than nonionic, therefore; The male structure zone is corroded by chemical liquids more easily; Become smooth, recessed structural region then is difficult for being corroded, and is visible; Because different corrosion rate difference between the recessed structural region that the male structure zone of injection ion and nonionic inject will help the planarization on whole PMD surface.
The flattening method of the before-metal medium layer that the embodiment of the invention provides before planarization is carried out on the PMD surface, at first carries out the high inclination-angle ion to the PMD surface with convex-concave structure and injects; Shadow effect when utilizing the high inclination-angle ion to inject realizes the selectivity bombardment to convex-concave structure on the PMD surface, and ion is injected in convex configuration zone, PMD surface; Make the activity in male structure zone be higher than the activity of recessed structural region; Improve the corrosion rate of male structure zone in chemical corrosion liquid greatly, therefore, under the effect that chemical liquids is corroded in the wet etching process; The male structure zone of injecting ion can obtain different corrosion rate difference with the recessed structural region that nonionic injects; The recessed structural region that the corrosion rate in the male structure zone of injection ion is injected apparently higher than nonionic, thus be convenient to realize the planarization on PMD surface, and; Owing to do not have the introducing of high rigidity polishing particles, the defective that can not cause device surface to scratch.
Understanding for the ease of to technical scheme of the present invention describes in detail to it below by the specific embodiment.
In the embodiment of the invention; The injection inclination angle theta of ion can be regulated between 0～90 degree, that is: the injection direction that can control ion comprises the injection of horizontal direction, the injection of vertical direction; And with horizontal plane angle 90 the degree within any angle; Make convex configuration zone, PMD surface can be injected into ion, and recessed structural region can not be injected into ion or inject small amount of ionic owing to be blocked.
When the angle that ion is injected has strict demand, can confirm the inclination angle that ion injects according to the difference in height and the spacing of PMD surface relief structure, guarantee that the recessed structural region on PMD surface was injected ion as far as possible less when ion injected even not to be injected into.Referring to Fig. 3, inject the sketch map at inclination angle for confirming ion.Wherein, grid is arranged on the substrate (substrate), and PMD is deposited on the grid; The height of said PMD bottom grid is H1, and the width of grid is L1, and the spacing of neighboring gates is L2; Gate height and gate pitch can be confirmed by the layout design parameter, form concaveconvex structure after the deposition PMD on the grid, usually; Height difference between said PMD male structure and the recessed structure is H1, and the spacing between the adjacent male structure of said PMD is L3, can be measured by technology to obtain.The recessed structural region on PMD surface is injected ion less as far as possible and even is not injected into when realizing that ion injects; Need the control ion to inject the inclination angle hour; The lower right-hand corner of male structure or place, the lower right corner can be injected by ion, yet the width in PMD male structure zone is greater than the width of grid usually; Thus, the numerical value of L2 is usually greater than L3.Therefore; When the injection inclination angle theta of ion is controlled between arctan (H1/L2)～arctan (H1/L3); The recessed structural region that can satisfy the PMD surface is injected the requirement that ion even is not injected into as far as possible less; In zone 2 among Fig. 4, be injected into small amount of ionic and even be not injected into ion, and the concentrated zone 1 that is injected into of ion.
In the embodiment of the invention, the component of said PMD can be SiO
2, the formation method can for chemical vapour deposition (CVD) (Chemical Vapor Deposition, CVD) or spin coating proceeding (Spin OnGlass, SOG), the present invention does not do concrete qualification to this.Correspondingly, inject ion and can select BF for use
2, any among P and the Ar, the injection energy range of ion is 30～810Kev, implantation dosage is 1E13～1E16 atom/cm
2, corresponding ion injects the degree of depth and can be controlled by the energy that ion injects.
With SiO
2Be example, on grid, form SiO
2After the pmd layer of forming, choose certain inclination angle, utilize BF with convex-concave structure
2, any ion among P and the Ar is according to this angle bombardment PMD surface, inclination angle, makes the SiO of PMD rat
2Part is injected ion in a large number, and since shadow effect, the SiO of PMD surface depression
2Part is injected into small amount of ionic and even is not injected into ion, protruding SiO
2The part under the bombardment effect of ion, SiO
2The Si-O key be destroyed, reduce this part SiO
2Chemical reaction activation energy in the chemical corrosion liquid corrosion process, enhanced activity is accelerated this part SiO
2With the reaction of chemical corrosion liquid, like this, protruding SiO
2The corrosion rate in zone is apparently higher than the SiO of depression
2The corrosion rate in zone, protruding SiO
2Be corroded more easily, be tending towards smooth.
In the embodiment of the invention, the chemical corrosion liquid that wet etching adopts is the mixed liquor of hydrofluoric acid and ammonium fluoride, perhaps is dilute hydrofluoric acid solution.
Wet etching is isotropic, and it corrodes SiO on the PMD surface downwards
2During the convex-concave structure formed, because protruding SiO
2The part under the bombardment effect of ion, SiO
2The Si-O key be destroyed, therefore, protruding SiO
2The corrosion rate in zone is apparently higher than the SiO of depression
2The corrosion rate in zone, feasible protruding SiO
2Be corroded more easily, be tending towards smooth, as shown in Figure 5, and the speed of the planarization on whole PMD surface also will improve greatly.In addition, wet etching is the multi-disc operation, can satisfy simultaneously the processing of multichip devices, makes production efficiency higher, can adapt to the needs of big production.
Though the present invention with preferred embodiment openly as above; But it is not to be used for limiting the present invention; Any those skilled in the art are not breaking away from the spirit and scope of the present invention; Can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.
Claims (9)
1. the flattening method of a before-metal medium layer is characterized in that, comprising:
The high inclination-angle ion is carried out on before-metal medium layer PMD surface with convex-concave structure to be injected;
Planarization is carried out on PMD surface after the method for utilizing wet etching is injected ion.
2. the flattening method of before-metal medium layer according to claim 1 is characterized in that, the injection inclination angle theta of said ion is 0～90 degree.
3. the flattening method of before-metal medium layer according to claim 2; It is characterized in that; The injection inclination angle theta of said ion is arctan (H1/L2)～arctan (H1/L3), and wherein, H1 is the height difference between said PMD male structure and the recessed structure; L2 is the spacing of said PMD bottom neighboring gates, and L3 is the spacing between the adjacent male structure of said PMD.
4. the flattening method of before-metal medium layer according to claim 1 is characterized in that, said ion is BF
2, a kind of among P and the Ar.
5. the flattening method of before-metal medium layer according to claim 1 is characterized in that, the injection energy range of said ion is 30～810Kev.
6. the flattening method of before-metal medium layer according to claim 1 is characterized in that, the implantation dosage of said ion is 1E13～1E16atom/cm
2
7. the flattening method of before-metal medium layer according to claim 1 is characterized in that, the component of said PMD is SiO
2
8. the flattening method of before-metal medium layer according to claim 7 is characterized in that, the chemical corrosion liquid that said wet etching adopts is the mixed liquor of hydrofluoric acid and ammonium fluoride, perhaps is dilute hydrofluoric acid solution.
9. the flattening method of before-metal medium layer according to claim 7 is characterized in that, said SiO
2Formation adopt chemical vapour deposition (CVD) or spin coating proceeding to form.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105875001A CN102543670A (en) | 2010-12-13 | 2010-12-13 | Planarization method for PMD (Pre-Metal Dielectric) layer |
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|---|---|---|---|
| CN2010105875001A CN102543670A (en) | 2010-12-13 | 2010-12-13 | Planarization method for PMD (Pre-Metal Dielectric) layer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108630532A (en) * | 2017-03-16 | 2018-10-09 | 富士电机株式会社 | The manufacturing method of semiconductor device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5676534A (en) * | 1979-11-28 | 1981-06-24 | Fujitsu Ltd | Manufacture of semiconductor device |
| US5246884A (en) * | 1991-10-30 | 1993-09-21 | International Business Machines Corporation | Cvd diamond or diamond-like carbon for chemical-mechanical polish etch stop |
| CN1540740A (en) * | 2003-04-21 | 2004-10-27 | 旺宏电子股份有限公司 | Method for preparing shallow trench isolation |
-
2010
- 2010-12-13 CN CN2010105875001A patent/CN102543670A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5676534A (en) * | 1979-11-28 | 1981-06-24 | Fujitsu Ltd | Manufacture of semiconductor device |
| US5246884A (en) * | 1991-10-30 | 1993-09-21 | International Business Machines Corporation | Cvd diamond or diamond-like carbon for chemical-mechanical polish etch stop |
| CN1540740A (en) * | 2003-04-21 | 2004-10-27 | 旺宏电子股份有限公司 | Method for preparing shallow trench isolation |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108630532A (en) * | 2017-03-16 | 2018-10-09 | 富士电机株式会社 | The manufacturing method of semiconductor device |
| CN108630532B (en) * | 2017-03-16 | 2023-09-12 | 富士电机株式会社 | Method for manufacturing semiconductor device |
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Application publication date: 20120704 |