CN102540721A - Photoresist composition and method for preparing fluorescent layer on surface of light emitting diode (LED) - Google Patents
Photoresist composition and method for preparing fluorescent layer on surface of light emitting diode (LED) Download PDFInfo
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- CN102540721A CN102540721A CN2010106024143A CN201010602414A CN102540721A CN 102540721 A CN102540721 A CN 102540721A CN 2010106024143 A CN2010106024143 A CN 2010106024143A CN 201010602414 A CN201010602414 A CN 201010602414A CN 102540721 A CN102540721 A CN 102540721A
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- 239000000203 mixture Substances 0.000 title claims abstract description 54
- 238000000034 method Methods 0.000 title claims abstract description 21
- 229920002120 photoresistant polymer Polymers 0.000 title abstract description 10
- 239000000843 powder Substances 0.000 claims abstract description 62
- 239000011347 resin Substances 0.000 claims abstract description 44
- 229920005989 resin Polymers 0.000 claims abstract description 44
- 239000004925 Acrylic resin Substances 0.000 claims abstract description 19
- -1 modified acrylic ester Chemical class 0.000 claims abstract description 12
- 239000000178 monomer Substances 0.000 claims abstract description 12
- 239000002904 solvent Substances 0.000 claims abstract description 10
- QOSMNYMQXIVWKY-UHFFFAOYSA-N Propyl levulinate Chemical compound CCCOC(=O)CCC(C)=O QOSMNYMQXIVWKY-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229920000728 polyester Polymers 0.000 claims abstract description 7
- 239000000113 methacrylic resin Substances 0.000 claims abstract description 6
- 239000004721 Polyphenylene oxide Substances 0.000 claims abstract description 5
- 229920000570 polyether Polymers 0.000 claims abstract description 5
- 239000004814 polyurethane Substances 0.000 claims abstract description 5
- 229920002635 polyurethane Polymers 0.000 claims abstract description 5
- 238000001259 photo etching Methods 0.000 claims description 48
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 33
- 238000000576 coating method Methods 0.000 claims description 31
- 239000011248 coating agent Substances 0.000 claims description 28
- 239000003795 chemical substances by application Substances 0.000 claims description 12
- 238000002360 preparation method Methods 0.000 claims description 11
- 230000001737 promoting effect Effects 0.000 claims description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 8
- 239000000839 emulsion Substances 0.000 claims description 8
- 229910000077 silane Inorganic materials 0.000 claims description 8
- 238000003384 imaging method Methods 0.000 claims description 7
- 229920002125 Sokalan® Polymers 0.000 claims description 6
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 claims description 6
- 239000004584 polyacrylic acid Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000007669 thermal treatment Methods 0.000 claims description 5
- 150000001252 acrylic acid derivatives Chemical class 0.000 claims description 4
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 claims description 4
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 2
- 229940116333 ethyl lactate Drugs 0.000 claims description 2
- 229920001296 polysiloxane Polymers 0.000 abstract 1
- KCTAWXVAICEBSD-UHFFFAOYSA-N prop-2-enoyloxy prop-2-eneperoxoate Chemical compound C=CC(=O)OOOC(=O)C=C KCTAWXVAICEBSD-UHFFFAOYSA-N 0.000 abstract 1
- 238000005507 spraying Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- TZRXHJWUDPFEEY-UHFFFAOYSA-N Pentaerythritol Tetranitrate Chemical compound [O-][N+](=O)OCC(CO[N+]([O-])=O)(CO[N+]([O-])=O)CO[N+]([O-])=O TZRXHJWUDPFEEY-UHFFFAOYSA-N 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 239000002390 adhesive tape Substances 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
- PZZOEXPDTYIBPI-UHFFFAOYSA-N 2-[[2-(4-hydroxyphenyl)ethylamino]methyl]-3,4-dihydro-2H-naphthalen-1-one Chemical compound C1=CC(O)=CC=C1CCNCC1C(=O)C2=CC=CC=C2CC1 PZZOEXPDTYIBPI-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 101000608734 Helianthus annuus 11 kDa late embryogenesis abundant protein Proteins 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Luminescent Compositions (AREA)
- Paints Or Removers (AREA)
Abstract
The invention provides a photoresist composition. The photoresist composition comprises 20 to 40 weight percent of resin, 20 to 30 weight percent of monomer corresponding to the resin, 1 to 16 weight percent of sensitizer and 24 to 50 weight percent of solvent, wherein the resin is at least one of methacrylic resin, silicone modified acrylic ester resin, epoxy acrylate resin, polyurethane acrylic ester resin, polyester acrylic ester resin, polyether acrylic ester resin and polyacrylic propyl ester resin. The invention also provides a method for preparing a fluorescent layer on the surface of a light emitting diode (LED) by using the photoresist composition. A fluorescent powder layer which is 10 to 100 mu m thick can be prepared on the surface of the LED by using the photoresist composition, and the fluorescent powder layer has uniform thickness, uniform light emitting color and high color temperature consistency.
Description
Technical field
The invention belongs to field of photoelectric technology, relate in particular to the method for a kind of photoetching compositions and a kind of LED surface preparation phosphor powder layer.
Background technology
LED (light emitting diode; Light-Emitting Diode) is one type of luminescent device that can directly electric energy be converted into visible light and radiation energy, has the efficient height, power consumption is little, the life-span is long, luminous mass is high, photochromic pure, advantages such as reliability is high, driving voltage is low, sound construction.The method of utilizing the photic conversion of led chip excitated fluorescent powder is the main path that present LED realizes white light; Mainly add that through blue-light LED chip yellow fluorescent powder makes, so the structure of phosphor powder layer, thickness, characteristic there is very big influence to the performance of LED lamp.
Photoresist is mainly used in the fluorescent powder blend fluorescent powder is evenly disperseed; Photoresist in the market mainly adopts acryl resin; But acryl resin viscosity is very rare, is difficult to form thick film on the led chip surface, and the too rare fluorescent powder of photoresist viscosity is difficult to that also dispersion is all arranged in photoresist in addition.
The main dosing technology that adopts of at present domestic LED lamp preparation mainly is surperficial in led chip through putting glue again after fluorescent powder and silica gel or epoxy resin are mixed.This technology causes the in uneven thickness of phosphor powder layer on the one hand; Thick middle, thin edge are the spherical crown shape, and the gold-tinted that transforms through fluorescent powder in the middle of the LED lamp is obviously more than the marginal portion; The white light irregular colour that makes the LED lamp send is even, local Huang or the blue partially inhomogeneous hot spot partially of occurring; In addition, the some glue amount of each chip is difficult to accurate control, causes the chip colour temperature of the same glue of marking words and phrases for special attention different, and the consistance of LED lamp is bad, to the colour temperature coherence request than higher field, limited applying of LED lamp.
Summary of the invention
The invention solves the technical matters that photoresist viscosity is low, the led chip surface fluorescent powder layer is in uneven thickness, LED lamp consistance is bad that exists in the prior art.
The invention provides a kind of photoetching compositions, contain the resin of 20-40wt% in the said photoetching compositions, the corresponding monomer of said resin of 20-30wt%, the emulsion of 1-16wt% and the solvent of 24-50wt%; Said resin is selected from least a in methacrylic resin, organosilicon-modified acrylate resin, Epocryl, polyurethane acrylate resin, polyester acrylate resin, polyether acrylate resin, the polyacrylic acid propyl ester resin.
The present invention also provides a kind of method of LED surface preparation fluorescence coating, may further comprise the steps:
1) with fluorescent powder be coated on the led chip surface after photoetching compositions evenly mixes, form fluoresent coating on the led chip surface; Said photoetching compositions is a photoetching compositions provided by the invention;
2) fluoresent coating is carried out exposure imaging, thermal treatment then forms phosphor powder layer on the led chip surface;
3) at phosphor powder layer surface-coated transparent agent, the dry anti-reflection film that forms.
In the photoetching compositions provided by the invention; Through selection to the resin kind; And the content of the corresponding monomer of resin, resin is controlled within the suitable scope; Make that the viscosity of photoetching compositions of the present invention is suitable, the favorable dispersibility of fluorescent powder in photoetching compositions is the thick film fluoresent coating of 10-100 micron thereby can form thickness on the led chip surface.
The method of LED surface preparation fluorescence coating provided by the invention, the viscosity of photoetching compositions is suitable, and fluorescent powder can be dispersed in the photoetching compositions; In addition, adopt the mode that applies to form phosphor powder layer on the led chip surface among the present invention, phosphor powder layer thickness is even, and the coating consumption is controlled, thus the white light color even that the LED lamp is sent, and improve its colour temperature consistance.
Embodiment
The invention provides a kind of photoetching compositions, contain the resin of 20-40wt% in the said photoetching compositions, the corresponding monomer of said resin of 20-30wt%, the emulsion of 1-16wt% and the solvent of 24-50wt%; Said resin is selected from least a in methacrylic resin, organosilicon-modified acrylate resin, Epocryl, polyurethane acrylate resin, polyester acrylate resin, polyether acrylate resin, the polyacrylic acid propyl ester resin.
Inventor of the present invention finds through a large amount of experiments, through the resin kind is selected, makes the favorable dispersibility of fluorescent powder in photoetching compositions; Control the content of resin and corresponding monomer in the photoetching compositions then, the viscosity of control photoetching compositions makes that adopting photoetching compositions of the present invention to form thickness on the led chip surface be the thick film fluoresent coating of 10-100 micron.Particularly, among the present invention, in the said photoetching compositions, the content of resin is 20-40wt%, and the content of the monomer that resin is corresponding is 20-30wt%, and the content of emulsion is 1-16wt%, and the content of solvent is 24-50wt%.
Under the preferable case, in the photoetching compositions, the content of resin is 30-40wt%, and the content of the monomer that resin is corresponding is 20-25wt%.
Among the present invention; Said resin is an acrylic resin, specifically is selected from least a in methacrylic resin, organosilicon-modified acrylate resin, Epocryl, polyurethane acrylate resin, polyester acrylate resin, polyether acrylate resin, the polyacrylic acid propyl ester resin.
In the photoetching compositions of the present invention; Emulsion for example can adopt azoisobutyronitrile (AIBN), 1 for the various nitrine quinoness that those skilled in the art use always, 2-two nitrine quinone-4-sulphonic acid ester, 1; 2-two nitrine-5-sulphonic acid ester or 1,2-two nitrine quinone-6-sulphonic acid ester.
Among the present invention, all kinds of solvents that solvent adopts those skilled in the art to use always for example can be selected from least a in acetate propylene glycol monomethyl ether ester, cyclohexanone, the ethyl lactate.
The present invention also provides a kind of method of LED surface preparation fluorescence coating, may further comprise the steps:
1) with fluorescent powder be coated on the led chip surface after photoetching compositions evenly mixes, form fluoresent coating on the led chip surface; Said photoetching compositions is a photoetching compositions provided by the invention;
2) fluoresent coating is carried out exposure imaging, thermal treatment then forms phosphor powder layer on the led chip surface;
3) at phosphor powder layer surface-coated transparent agent, the dry anti-reflection film that forms.
According to the method for the invention, earlier fluorescent powder and photoetching compositions are mixed, be coated on the led chip surface then, thereby form fluoresent coating on the led chip surface.Wherein, said photoetching compositions is photoetching compositions provided by the invention.Fluorescent powder with 100 weight portions is benchmark, and the consumption of photoetching compositions is the 200-1000 weight portion.
As a kind of preferred implementation of the present invention, also be included in the led chip surface and form before the fluoresent coating, form the step of adhesion promoting layer at led chip surface-coated tackifier.Said adhesion promoting layer is used to improve the adhesion of fluoresent coating and led chip, makes fluoresent coating in use can not break away from from the led chip surface.Said tackifier can adopt various silane coupling agents, for example can adopt HMDS, KH-560, KH-570 or KH-550.Among the present invention, the thickness of adhesion promoting layer is unsuitable excessive, in order to avoid reduce the blue light transmitance of led chip, so the consumption of tackifier is unsuitable excessive; For example, can led chip be placed the tackifier spraying, thereby tackifier form adhesion promoting layer on the led chip surface-coated.
According to the method for the invention, fluoresent coating is carried out exposure imaging.The said step that fluoresent coating is carried out exposure imaging is conventionally known to one of skill in the art, is the led chip that the surface is had a fluoresent coating and places and carry out radiation under the ultraviolet light; The fluoresent coating in ultraviolet radiation zone, led chip surface is retained after development, and the fluoresent coating of radiation areas is not developed removal, thereby forms the phosphor powder layer that constitutes required pattern at led chip.Under the preferable case, exposure dose is 100-500mj/cm
2Exposure imaging is heat-treated after accomplishing then, to improve the adhesion of phosphor powder layer and led chip.Under the preferable case, heat treatment temperature is 100-150 ℃, and heat treatment time is 30-50min.
Among the present invention, at last at phosphor powder layer surface-coated transparent agent, the dry anti-reflection film that forms.Said transparent agent is the aqueous isopropanol of silane resin, and the content of silane resin is 1-3wt% in the transparent agent.Among the present invention, said anti-reflection film can improve the transmitance of visible light on the one hand, especially improves the transmitance of gold-tinted; The transmitance of the gold-tinted of led chip surface fluorescence powder conversion is improved; Thereby can reduce the consumption of fluorescent powder, reduce the scattering process of fluorescent powder, can effectively reduce cost light; On the other hand, anti-reflection film is covered in the phosphor powder layer surface, has higher hardness and water-fast moisture resistance gas effect, and phosphor powder layer is had the better protect effect.
Adopt method of the present invention to form the phosphor powder layer and the anti-reflection film of thick film on the led chip surface, the thickness of said phosphor powder layer is the 10-100 micron, and the thickness of anti-reflection film is the 1-3 micron.
Among the present invention; On led chip surface or adhesion promoting layer surface-coated fluorescent powder and photoetching compositions and can adopt in spin coating, brushing, dip-coating method, spraying, the serigraphy any one at the coating method that phosphor powder layer surface-coated transparent agent is adopted, the present invention does not have particular determination.Under the preferable case, apply the coating method that fluorescent powder and photoetching compositions adopt serigraphy, adopt the coating method of spraying at phosphor powder layer surface-coated transparent agent.Among the present invention; Mode through applying can evenly cover fluoresent coating on the surperficial perhaps antireflection layer of led chip surface; Thereby form the uniform phosphor powder layer of thickness on the led chip surface; Make that LED sample glow color is even, have good colour temperature consistance, be superior to dosing technology of the prior art.
As those skilled in the art's common practise, when led chip is used to make the LED lamp, also need to chip cut, sorting, solid brilliant, bonding wire.Said cutting, sorting, solid step brilliant, bonding wire are conventionally known to one of skill in the art, do not give unnecessary details among the present invention.Said cutting, sorting, solid step brilliant, bonding wire can be carried out before forming anti-reflection film, also can after forming anti-reflection film, carry out.
Below in conjunction with embodiment the present invention is described further.
Embodiment 1
(1) preparation photoetching compositions S1: methacrylic resin 30wt%, methacrylic acid monomer 30wt%, emulsion AIBN 16wt%, solvent acetic acid propylene glycol monomethyl ether ester 24wt%.
(2) led chip is placed tackifier HMDS spraying, form one deck adhesion promoting layer on the led chip surface.
(3) the photoetching compositions S1 of step (1) preparation of the fluorescent powder of 100 weight portions and 500 weight portions is mixed after, be coated on through serigraphy on the adhesion promoting layer of step (2).
The led chip that (4) will pass through step (3) places under the uviol lamp and makes public, and exposure dose is 150mj/cm
2Change 120 ℃ of following thermal treatment 40min in the baking oven over to, obtain the led chip that the surface is formed with phosphor powder layer, the thickness of phosphor powder layer is 30 microns.
(5) at the aqueous isopropanol of phosphor powder layer surface spraying transparent agent silane resin, wherein the content of silane resin is 1wt%, and formation thickness is 1 micron anti-reflection film after the drying at room temperature, obtains the LED sample S11 of present embodiment.
Embodiment 2
Preparation photoetching compositions S2: polyacrylic acid propyl ester resin 15wt%; Polyester acrylate resin 15wt%; Polyacrylic acid propyl ester monomer 10wt%; Polyester acrylate monomer 10wt% emulsion 1,2-two nitrine quinone-4-sulphonic acid ester 10wt%, solvent acetic acid propylene glycol monomethyl ether ester and cyclohexanone (volume ratio is 1:1) 40wt%.
Adopt the LED sample S22 for preparing present embodiment with embodiment 1 identical step (2-5) then.
Embodiment 3
(1) the photoetching compositions S1 of embodiment 1 step (1) preparation of the fluorescent powder of 100 weight portions and 1000 weight portions is mixed after, be coated on the led chip surface through serigraphy.
The led chip that (2) will pass through step (1) places under the uviol lamp and makes public, and exposure dose is 300mj/cm
2Change 120 ℃ of following thermal treatment 40min in the baking oven over to, obtain the led chip that the surface is formed with phosphor powder layer, the thickness of phosphor powder layer is 80 microns.
(3) at the aqueous isopropanol of phosphor powder layer surface spraying transparent agent silane resin, wherein the content of silane resin is 2wt%, and formation thickness is 2 microns anti-reflection film after the drying at room temperature, obtains the LED sample S33 of present embodiment.
Embodiment 4
Adopt to prepare LED sample S44 with embodiment 1 identical step, difference is: in the step (3), the weight ratio of fluorescent powder and photoetching compositions S1 is 100:200.
Embodiment 5
Adopt to prepare LED sample S55 with embodiment 1 identical step, difference is: in the step (4), exposure dose is 200mj/cm
2Heat treated temperature is 150 ℃, and heat treatment time is 50min, obtains the led chip that the surface is formed with phosphor powder layer, and the thickness of phosphor powder layer is 60 microns.
Performance test:
LED sample S11-S55 and DS11 are tested respectively as follows, and test result is as shown in table 1.
1, hardness test
According to the GB/6739T disclosed method, the hardness of the anti-reflection film of test LED sample surfaces.Use pencil hardness tester, under 1kg power, pushed away at substrate surface with Mitsubishi's pencil, draw 3 times, the coating surface not damaged is designated as OK; 1 time slight scuffing being arranged in 3 times is NO.
2, adhesion test
Mark 100 of the lattices of the 1mm of being spaced apart of uniform size at the LED sample surfaces with sharp blade; The lattice that the statistics film comes off is counted N1; The adhesive tape that width is 24mm is sticked in the lattice zone of drawing on film, and guarantees to combine between adhesive tape and the film that grid is arranged tight.Behind the 5min, adhesive tape is uncovered, and added up the lattice that film comes off once more and count N2 with the power of a vertical face.Binding force of membrane mark Z=(100-N1-N2)/100 * 100%.
Table 1
| Sample | Phosphor powder layer thickness | Anti-reflection film thickness | Hardness | Adhesion |
| S11 | 30 microns | 1 micron | OK | 100% |
| S22 | 30 microns | 1 micron | OK | 99% |
| S33 | 80 microns | 2 microns | OK | 89% |
| S44 | 100 microns | 1 micron | OK | 95% |
| S55 | 60 microns | 1 micron | OK | 95% |
Test result through last table 1 can be found out; Among the present invention; Can form thickness on the led chip surface is the phosphor powder layer of 30-80 micron; The viscosity that photoetching compositions of the present invention is described is suitable, and fluorescent powder is favorable dispersibility in this photoetching compositions, ability after therefore adopting photoetching compositions of the present invention and fluorescent powder mixes.The comparative descriptions as a result of S11-S22, S44-S55 and S33 forms the adhesion that adhesion promoting layer can obviously improve phosphor powder layer and led chip earlier on the led chip surface.
Claims (12)
1. a photoetching compositions is characterized in that, contains the resin of 20-40wt% in the said photoetching compositions, the corresponding monomer of said resin of 20-30wt%, the emulsion of 1-16wt% and the solvent of 24-50wt%; Said resin is selected from least a in methacrylic resin, organosilicon-modified acrylate resin, Epocryl, polyurethane acrylate resin, polyester acrylate resin, polyether acrylate resin, the polyacrylic acid propyl ester resin.
2. photoetching compositions according to claim 1 is characterized in that, in the said photoetching compositions, the content of resin is 30-40wt%, and the content of the monomer that resin is corresponding is 20-25wt%.
3. photoetching compositions according to claim 1 and 2 is characterized in that, emulsion is the nitrine quinones.
4. photoetching compositions according to claim 1 and 2 is characterized in that, solvent is selected from least a in acetate propylene glycol monomethyl ether ester, cyclohexanone, the ethyl lactate.
5. the method for a LED surface preparation fluorescence coating may further comprise the steps:
1) with fluorescent powder be coated on the led chip surface after photoetching compositions evenly mixes, form fluoresent coating on the led chip surface; Said photoetching compositions is each described photoetching compositions of claim 1-4;
2) fluoresent coating is carried out exposure imaging, thermal treatment then forms phosphor powder layer on the led chip surface;
3) at phosphor powder layer surface-coated transparent agent, the dry anti-reflection film that forms.
6. method according to claim 5 is characterized in that, also is included in the led chip surface and forms before the fluoresent coating, forms the step of adhesion promoting layer at led chip surface-coated tackifier.
7. method according to claim 6 is characterized in that, said tackifier are silane coupling agent.
8. method according to claim 5 is characterized in that, is benchmark with the fluorescent powder of 100 weight portions, and the consumption of photoetching compositions is the 200-1000 weight portion.
9. method according to claim 5 is characterized in that, the step that fluoresent coating is carried out exposure imaging comprises that the led chip that the surface is had a fluoresent coating places radiant exposure under the ultraviolet light, and exposure dose is 100-500mj/cm
2
10. method according to claim 5 is characterized in that, heat treated condition comprises: heat treatment temperature is 100-150 ℃, and heat treatment time is 30-50min.
11. method according to claim 5 is characterized in that, transparent agent is the aqueous isopropanol of silane resin, and the content of silane resin is 1-3wt% in the transparent agent.
12. method according to claim 5 is characterized in that, the thickness of phosphor powder layer is the 10-100 micron, and the thickness of anti-reflection film is the 1-3 micron.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010602414.3A CN102540721B (en) | 2010-12-23 | 2010-12-23 | Photoresist composition and method for preparing fluorescent layer on surface of light emitting diode (LED) |
| PCT/CN2011/082556 WO2012083776A1 (en) | 2010-12-23 | 2011-11-21 | Photoresist composition, led device and method of preparing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010602414.3A CN102540721B (en) | 2010-12-23 | 2010-12-23 | Photoresist composition and method for preparing fluorescent layer on surface of light emitting diode (LED) |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102540721A true CN102540721A (en) | 2012-07-04 |
| CN102540721B CN102540721B (en) | 2015-06-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010602414.3A Expired - Fee Related CN102540721B (en) | 2010-12-23 | 2010-12-23 | Photoresist composition and method for preparing fluorescent layer on surface of light emitting diode (LED) |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102540721B (en) |
| WO (1) | WO2012083776A1 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102924904A (en) * | 2012-10-25 | 2013-02-13 | 无锡市三力胶带厂 | Photosensitive high polymer material and preparation technique thereof |
| CN107093549A (en) * | 2017-05-08 | 2017-08-25 | 京东方科技集团股份有限公司 | Bond the painting method and device in intermediate layer |
| CN107163223A (en) * | 2017-06-30 | 2017-09-15 | 周远华 | A kind of photochromic TPU film of high temperature resistant and preparation method thereof |
| CN111675818A (en) * | 2020-06-17 | 2020-09-18 | 中山明成光电科技有限公司 | Shading composite film for optical instrument and preparation method thereof |
| CN112485967A (en) * | 2020-12-29 | 2021-03-12 | 安徽邦铭新材料科技有限公司 | Photoresist composition for TFT-LCD |
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| WO2004107457A2 (en) * | 2003-05-30 | 2004-12-09 | Brasscorp Limited | Led inspection lamp, cluster led, and led with stabilizing agents |
| CN1601381A (en) * | 2003-09-22 | 2005-03-30 | 富士胶片株式会社 | Presensitized plate and lithographic printing method |
| CN100561761C (en) * | 2007-07-26 | 2009-11-18 | 电子科技大学 | Power type white light LED plane coating process based on water soluble photosensitive |
| CN101867007A (en) * | 2010-05-11 | 2010-10-20 | 电子科技大学 | Preparation method of LED lamp fluorescent powder layer |
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2010
- 2010-12-23 CN CN201010602414.3A patent/CN102540721B/en not_active Expired - Fee Related
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- 2011-11-21 WO PCT/CN2011/082556 patent/WO2012083776A1/en active Application Filing
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000292920A (en) * | 1999-04-02 | 2000-10-20 | Jsr Corp | Radiation sensitive composition for color filter |
| WO2004107457A2 (en) * | 2003-05-30 | 2004-12-09 | Brasscorp Limited | Led inspection lamp, cluster led, and led with stabilizing agents |
| CN1601381A (en) * | 2003-09-22 | 2005-03-30 | 富士胶片株式会社 | Presensitized plate and lithographic printing method |
| CN100561761C (en) * | 2007-07-26 | 2009-11-18 | 电子科技大学 | Power type white light LED plane coating process based on water soluble photosensitive |
| CN101867007A (en) * | 2010-05-11 | 2010-10-20 | 电子科技大学 | Preparation method of LED lamp fluorescent powder layer |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102924904A (en) * | 2012-10-25 | 2013-02-13 | 无锡市三力胶带厂 | Photosensitive high polymer material and preparation technique thereof |
| CN107093549A (en) * | 2017-05-08 | 2017-08-25 | 京东方科技集团股份有限公司 | Bond the painting method and device in intermediate layer |
| CN107163223A (en) * | 2017-06-30 | 2017-09-15 | 周远华 | A kind of photochromic TPU film of high temperature resistant and preparation method thereof |
| CN111675818A (en) * | 2020-06-17 | 2020-09-18 | 中山明成光电科技有限公司 | Shading composite film for optical instrument and preparation method thereof |
| CN112485967A (en) * | 2020-12-29 | 2021-03-12 | 安徽邦铭新材料科技有限公司 | Photoresist composition for TFT-LCD |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102540721B (en) | 2015-06-24 |
| WO2012083776A1 (en) | 2012-06-28 |
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