CN102539447A - Sample Inspection System And Method Of Inspection Using The Same - Google Patents
Sample Inspection System And Method Of Inspection Using The Same Download PDFInfo
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- CN102539447A CN102539447A CN2011103224640A CN201110322464A CN102539447A CN 102539447 A CN102539447 A CN 102539447A CN 2011103224640 A CN2011103224640 A CN 2011103224640A CN 201110322464 A CN201110322464 A CN 201110322464A CN 102539447 A CN102539447 A CN 102539447A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
- G01B11/303—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces using photoelectric detection means
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/0002—Inspection of images, e.g. flaw detection
- G06T7/0004—Industrial image inspection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
Abstract
The invention provides an inspection system, which comprises a first optical inspection unit used for amplifying and observing a sample at the macroscopic level or the medium level; a second optical inspection unit in communication with the first optical inspection unit so as to amplify and observe the sample at the microscopic level; a scanning electronic inspection unit in communication with the first and second optical inspection units so as to scan the sample through an electron beam and then amplify and observe the sample; and a robot arm used for carrying the sample to the first and second optical inspection units and the scanning electronic inspection unit. Therefore, the sample can be accurately tested, so that the passing possibility of defect samples is lower.
Description
The cross reference of related application
The application's case advocate application on October 21st, 2010 korean patent application case 10-2010-0103101 number right of priority with and all authority that obtains according to the regulation of 35U.S.C. § 119, the content of said application case way of reference in full is incorporated herein.
Technical field
The present invention relates to a kind of sample survey system and a kind of method of using said sample survey system test sample; And more particularly, relate to a kind of accurately sample survey system and a kind of method of using said sample survey system test sample of check sample of being used for.
Background technology
For efficient light emitting diode (LED), highlight extract efficiency (luminescence efficiency) and high internal quantum are necessary.Therefore, in general, on substrate, form a plurality of 2 to 3 microns male-female structures and improve light extraction efficiency with refraction and irregular reflection through the light due to the said male-female structure.Can use various male-female structures (for example, semisphere or pyramid male-female structure).
The luminescence efficiency of LED changes according to the characteristic of male-female structure to a great extent.For instance, the luminescence efficiency of LED is to confirm through defective, size and the shape of male-female structure.Therefore, when using substrate to make LED, be to form on the substrate before the LED, on substrate, form the male-female structure earlier, and analyze the characteristic of said male-female structure, for example, defective, shape and size.
In general, use optical system to analyze the male-female structure, this is because can under the situation of cutting sample not, obtain 3-D view.The instance of optical system comprises Laser Scanning Confocal Microscope (confocal microscope), white light scanning interferometer (white light scanning interferometer; WSI), phase shifting interferometer (phase shifting interferometer, PSI), not Ah's checking system (Moire inspection system) and fizeau interferometer (Fizeau interferometer).Laser Scanning Confocal Microscope, WSI, PSI and fizeau interferometer have about 1 nanometer or are lower than the fine resolution of 1 nanometer.Yet, because optical distortion is difficult to check edge or some shape surface.For instance, be formed with under 2 to 3 microns the situation of substrate of male-female structure, the profile that is difficult to observe said male-female structure exactly is with information extraction (for example, the kind of defective, number and size).In addition, be formed with under the have sharp-pointed part situation of substrate of male-female structure of (for example, pyramid), because the optical distortion at said sharp-pointed part place is difficult to the said substrate of optics system test.Therefore, like institute's demonstration among Fig. 5 (b), on the image of seizure, possibly cut the some parts of male-female structure.That is,, be difficult to observe exactly and definite defective although the male-female structure is defective.In addition, form technology although under the situation that observes defective male-female structure, be necessary to revise the male-female structure, possibly be difficult to suitably revise the male-female structure and form technology, this is because be difficult to observe exactly defective male-female structure.This situation may reduce the qualification rate of LED manufacturing process.
Summary of the invention
The present invention provides a kind of sample survey system and a kind of method of using said system test sample of accurately check sample.
The present invention also provides a kind of sample survey system and a kind of method of using said system test sample that can accurately check the sample with sharp-pointed part.
The present invention also provides a kind of checking system that comprises optical microscope and scanning electron microscope, and a kind of method of using said system test sample.
According to example embodiment, a kind of checking system comprises: first optical inspection means, and it is in order to amplify and observing samples under macro-level or middle sight (meso) level; Second optical inspection means, it is communicated by letter with said first optical inspection means and in order under microscopic level, to amplify and observing samples; The scanning electron verifying attachment, it is communicated by letter with said first optical inspection means and said second optical inspection means and in order to through amplifying with the electron beam scanning samples and observing said sample; And the robots arm, it is in order to be carried to sample said first optical inspection means, said second optical inspection means and said scanning electron verifying attachment.
Said scanning electron verifying attachment can be caught 3-D view from sample.
Said checking system can further comprise: first microscope carrier (stage), and it is placed in position corresponding to the downside of said first optical inspection means to be used to support sample; Second microscope carrier, it is placed in position corresponding to the downside of said second optical inspection means to be used to support sample; And the 3rd microscope carrier, it is placed in the position corresponding to the downside of said scanning electron verifying attachment.
Said checking system can further comprise in order to flatly to move said first microscope carrier and can move horizontally parts to the three to first of said the 3rd microscope carrier and can move horizontally parts.
According to another example embodiment, a kind of method of service test system test sample is provided, said checking system comprises: first optical inspection means, it is in order to amplification under macro-level or middle sight level and observe said sample; Second optical inspection means, it is in order to amplification under microscopic level and observe said sample; And the scanning electron verifying attachment, it is in order to amplification and observe said sample.Said method comprises: check said sample fully through using said first optical inspection means; Confirm whether defectiveness of said sample; At definite said sample is not under the defective situation, stops the check of said sample; And under definite defective situation of said sample, use said second optical inspection means or said scanning electron verifying attachment to check said sample according to the surface configuration of said sample.
Using before said second optical inspection means or said scanning electron verifying attachment check said sample, said method can further comprise the surface configuration of confirming said sample.
Said sample possibly have a plurality of male-female structures on the one of which side.
If said sample has sharp-pointed part, can, said first optical inspection means of use use said scanning electron verifying attachment to check said sample after checking said sample so.
If said sample does not have sharp-pointed part, can, said first optical inspection means of use use said second optical inspection means or said scanning electron verifying attachment to check said sample after checking said sample so.
If use said second optical inspection means or said scanning electron verifying attachment to check said sample, just so scalable and observe the part of said sample.
Said second optical inspection means or said scanning electron verifying attachment can receive positional information about the defective of said sample so that amplify said sample based on said positional information from said first optical inspection means.
Description of drawings
Can come to understand in more detail example embodiment from the following description that combines accompanying drawing to carry out, in the accompanying drawings:
Fig. 1 is the block diagram of explanation according to the checking system of example embodiment.
Fig. 2 is the view of explanation according to the optical check unit of example embodiment.
Fig. 3 is the view of explanation according to the scanning electron verification unit of example embodiment.
Fig. 4 (a) is explanation is formed with first sample of a plurality of semisphere male-female structures on substrate a sectional view, and Fig. 4 (b) is for using the cross section large scale image of second optical microscope from the first sample intercepting.
Fig. 5 (a) is formed with the sectional view of second sample of a plurality of pyramid male-female structures on substrate for explanation; Fig. 5 (b) is for using the cross section large scale image of second optical microscope from the second sample intercepting; And (scanning electron microscope is SEM) from the cross section large scale image of the second sample intercepting in order to use scanning electron microscope for Fig. 5 (c).
Fig. 6 is for explaining the process flow diagram according to the method for service test system test first sample of example embodiment and second sample.
Embodiment
Hereinafter, will describe specific embodiment in detail referring to accompanying drawing.Yet the present invention can multi-formly embody and should not be interpreted as the embodiment that is limited among this paper to be set forth.Truth is that it is detailed and complete in order to make that this announcement can be that these embodiment are provided, and category of the present invention is fully conveyed to the those skilled in the art.
Fig. 1 is the block diagram of explanation according to the checking system of example embodiment.Fig. 2 is the view of explanation according to the optical check unit of example embodiment.Fig. 3 is the view of explanation according to the scanning electron verification unit of example embodiment.
According to embodiment, but the service test system come on amplifying yardstick (from macro-level or the sight level to microscopic level) check sample (S) to be to realize the rigorous examination to sample (S).The substrate (for example, wafer) that in an embodiment, will be formed with a plurality of male-female structures with predetermined space is as sample (S).The meaning of " surface of sample (S) " this wording is the surface of substrate and the surface of a plurality of male-female structures.Yet sample (S) is not limited thereto situation.That is, can be with various items as sample (S).
Referring to Fig. 1, the checking system of embodiment comprises: optical check unit 100, scanning electron verification unit 200 and robots arm 300.Optical check unit 100 comprises: first optical inspection means 170, and it is in order to pass through to use the surface of light amplification and observing samples (S) under macro-level or middle sight level; And second optical inspection means 180, it is in order to amplify and observing samples (S) under microscopic level.Scanning electron verification unit 200 is in order to pass through with electron beam scanning samples (S) check sample (S).Robots arm 300 is in order to carry sample (S).In addition, checking system further comprises in first card casket 410, the first card caskets 410 and contains sample to be checked (S); The second card casket 420, it is in order to contain the sample (S) that observes defective; And the 3rd the card casket 430, it is in order to contain the sample (S) that does not observe defective.Robots arm 300 is carried to first optical inspection means 170, second optical inspection means 180 and scanning electron verification unit 200 with sample (S) from the first card casket 410.In addition, robots arm 300 is carried to the second card casket 420 or the 3rd card casket 430 with sample (S) from first optical inspection means 170, second optical inspection means 180 and scanning electron verification unit 200.
Referring to Fig. 1 and Fig. 2, optical check unit 100 has the inner space.Optical check unit 100 comprises: first chamber 130, and its maintenance is in vacuum; First optical inspection means 170, its through from last side direction first chamber 130 luminous and macro-level or amplify and observing samples (S) under the sight level; Second optical inspection means 180, it is placed in first chamber, 130 outsides and flatly separates with observing samples (S) under microscopic level with first optical inspection means 170; The first microscope carrier 132a, it is placed in first chamber 130 position corresponding to the downside of first optical inspection means 170 to support sample (S); And the second microscope carrier 132b, it is placed in first chamber 130 position corresponding to the downside of second optical inspection means 180.The first window 131a and the second window 131b are arranged on the top side of first chamber 130 position corresponding to the lower end of first optical inspection means 170 and second optical inspection means 180.Optical check unit 100 further comprises: first can move horizontally parts 133a and second can move horizontally parts 133b, and it moves the first microscope carrier 132a and the second microscope carrier 132b; And first the lifting piece 134a and the second lifting piece 134b, it promotes the first microscope carrier 132a and the second microscope carrier 132b.
In an embodiment, first chamber 130 has the hollow rectangle box shaped.Yet the shape of first chamber 130 is not limited thereto situation.Can form the inlet port (not shown) at the place, side of first chamber 130 carries out so that sample (S) is carried in first chamber 130 and from first chamber 130.In addition, but working pressure control module (not shown) is controlled the internal pressure of first chamber 130, and can use the inside emptying of exhaust unit (not shown) with first chamber 130.Pass the first window 131a and the second window 131b from the transmittance of first optical microscope 110 that is placed in first chamber, 130 tops and 120 emissions of second optical microscope.The first window 131a and the second window 131b form through transparent glass material.
First optical inspection means 170 and second optical inspection means 180 comprise: first optical microscope 110 and second optical microscope 120, and it is in order to upward and from sample (S) to extract view data through light being projected sample (S); And first reader 140 and second reader 150, it is communicated by letter with first optical microscope 110 and second optical microscope 120.First optical inspection means 170 can be in order to amplifying under macro-level or middle sight level and observing samples (S), and second optical inspection means 180 can be in order to amplify and observing samples (S) under microscopic level.Can be with for example Laser Scanning Confocal Microscope (confocal microscope), white light scanning interferometer (white light scanning interferometer; WSI), (phase shifting interferometer, PSI), the device of Ah's verifying attachment (Moire inspection device) and fizeau interferometer (Fizeau interferometer) is not as first optical microscope 110 and second optical microscope 120 for phase shifting interferometer.Yet the instance of first optical microscope 110 and second optical microscope 120 is not limited thereto.For instance, can be with any device as first optical microscope 110 and second optical microscope 120, as long as it can be in order to amplify and observing samples (S) under macro-level or middle sight level and microscopic level with various structures and configuration.
Such as preceding text description, according to current embodiment, through using first optical inspection means 170 observing samples (S) under macro-level or middle sight level, and then through using second optical inspection means 180 to amplify samples (S) under microscopic level observing samples (S).When using second optical inspection means, 180 observing samples (S), based on the defectiveness position of using second optical inspection means 180 to amplify samples (S) of using that first optical inspection means 170 obtains about the positional information of defective.At length say, the positional information about defective that is stored in first reader 140 is transferred to second reader 150, and second optical microscope 120 is transferred large sample (S) based on said positional information in microscopic level.In this way, owing to use first optical microscope 110 and second optical microscope, 120 adjoining land check samples (S), so can reduce the possibility that defectiveness sample (S) is passed through.That is, can detect defective exactly.
Scanning electron verification unit 200 is in order to pass through with electron beam scanning samples (S) under microscopic level or nanoscale, amplifying also observing samples (S).Scanning electron verification unit 200 comprises: vacuum lock (loadlock) 220, and it has the inner space; And scanning electron verifying attachment 250, it is connected to vacuum lock 220 to pass through with electron beam scanning samples (S) check sample (S).Scanning electron verifying attachment 250 comprises: second chamber 230, and it has the inner space; Scanning electron microscope (scanning electron microscope, SEM) 240, it partly is inserted in second chamber 230 with electron beam scanning samples (S); Third reading is got device 210, and it is communicated by letter with scanning electron microscope 240; And the 3rd microscope carrier 232a, it is placed in second chamber 230 position corresponding to the downside of scanning electron microscope 240, to support sample (S).Scanning electron verification unit 200 further comprises: the 3rd can move horizontally parts 233a, and it flatly moves the 3rd microscope carrier 232a; And the 3rd lifting piece 234a, it promotes the 3rd microscope carrier 232a.
Scanning electron microscope 240 comprises electron gun 241, and it is in order to produce electron beam; And optical tubes (optical column) 242, it is placed in the downside place of electron gun 241 and wherein has the lens (not shown).Optical tubes 242 is the optical channel with the electron beam of lens gathering.Electron gun 241 is towards sample (S) divergent bundle.Thermion electron gun or field emission electron gun can be used as electron gun 241.In recent years, use field emission electron gun usually, because its resolution and efficient are higher.Yet, can the electron gun of any kind of be used as electron gun 241.Lens use electric field and magnetic interference from electron gun 241 ejected electron bundles, so that electron beam is assembled.Perhaps, can use the convergent lens of any other type.Through optical tubes 242 will from electron gun 241 emission and pass through the electron beam guiding sample (S) that convergent lens is assembled.Optical tubes 242 is communicated with second chamber 230, and therefore, and when observing samples (S), optical tubes 242 is in the high vacuum state of about 10-6 holder.
Third reading gets that device 210 can comprise the graphics processing unit (not shown), confirms the unit, the defect coordinate computing unit, and memory cell.Graphics processing unit becomes brightness to obtain the image of sample (S) through amplifying from the secondary electron on the surface of sample (S) or reflection electronic and with gained quantum intensity-conversion.Confirm that the unit detects the kind of defective and definite defective.The defect coordinate computing unit calculates the position of defective.The position of memory stores defective.
When using scanning electron microscope 240 observing samples (S), use positional information about the defective of sample (S) through using that first optical inspection means 170 obtains.Say that at length the third reading of scanning electron verifying attachment 250 is got the positional information that device 210 receives about the defective of sample (S) from first reader 140, and scanning electron microscope 240 is based on said positional information and with electron beam scanning samples (S).
According to embodiment, the sample (S) that can use scanning electron verification unit 200 to observe to have male-female structure (at least one sharp-pointed part of tool).Sharp-pointed part can be the sharp-pointed part or the acute angle portion of sample (S).For instance, referring to Fig. 5 (a), the tip of pyramid male-female structure is sharp-pointed part.Use 200 observations of scanning electron verification unit to have the surface of the sample (S) of sharp-pointed part; This be because: if from second optical microscope 120 to sample (S) emission light to use second optical microscope 120 observing samples (S) under microscopic level, can optical distortion take place so because of the sharp-pointed part of sample (S).Like institute's demonstration (wherein having cut the some parts of male-female structure) among Fig. 5 (b), if the generation optical distortion can't be caught the shape of male-female structure so definitely.That is, if use second optical microscope, 120 observing samples (S), the so accurately characteristic of observing samples (S), for example shape, size and the angle of defective, male-female structure.
Therefore, in an embodiment, when check has the sample (S) of sharp-pointed part, at first optical inspection means, 170 observing samples (S) that use optical check unit 100 afterwards, use scanning electron verifying attachment 250.Such as preceding text description because scanning electron verifying attachment 250 enlarged image, so optical distortion can not take place through catching sample (S) with electron beam scanning samples (S).Therefore, can use scanning electron verifying attachment 250 accurately to observe sample (S) with sharp-pointed part.
In an embodiment; Such as preceding text description; Through use first optical inspection means 170 under macro-level or middle sight level fully observing samples (S) and successively use scanning electron verifying attachment 250 to amplify samples (S) so that detect the position of defective and defective with observing samples (S) under microscopic level.Therefore, can reduce the possibility that defective sample (S) is passed through.That is, can detect defective more accurately.
Fig. 4 (a) is explanation is formed with first sample of a plurality of semisphere male-female structures on substrate a sectional view, and Fig. 4 (b) is for using the cross section large scale image of second optical microscope 120 from the first sample intercepting.Fig. 5 (a) is formed with the sectional view of second sample of a plurality of pyramid male-female structures on substrate for explanation; Fig. 5 (b) is the cross section large scale image of use second optical microscope 120 from the second sample intercepting, and Fig. 5 (c) is for using the cross section large scale image of scanning electron microscope 240 from the second sample intercepting.Fig. 6 is for explaining the process flow diagram according to the method for service test system test first sample of example embodiment and second sample.
Referring to Fig. 1 to Fig. 6, with providing about explanation according to the method for the service test system test first sample S1 of example embodiment.
At first, through using robots arm 300 the first sample S1 to be moved to the first microscope carrier 132a of optical check unit 100 from the first card casket 410.After being positioned over the first sample S1 on the first microscope carrier 132a, under macro-level or middle sight level, amplify the first sample S1 through first optical inspection means 170 of using optical check unit 100, so that observe the surface (S100) of the first sample S1 fully.Next, the image that uses first reader, 140 analyses, first sample S1 communicate by letter with first optical microscope 110 is with definite first sample S1 defectiveness whether.
After use first optical inspection means 170 is observed the first sample S1 fully,, stop the check of the first sample S1 so if confirm that the first sample S1 is not defective.To not be the defective first sample S1 through robots arm's 300 (not shown)s unloads and it is moved to the 3rd card casket 430 from the first microscope carrier 132a.
On the other hand, if through using first optical inspection means 170 to confirm the first sample S1 defectiveness after under macro-level or middle sight level, observing the first sample S 1 fully, the defective locations of first reader, 140 storages, the first sample S1 so.Next, use second optical inspection means 180 under microscopic level, to observe the first sample S1 (S310).At length say, the first sample S1 is moved to the second microscope carrier 132b from the first microscope carrier 132a through using robots arm 300.Next, through using second optical inspection means 180 under microscopic level, to amplify and observing the first sample S1.At this moment, the information that second reader 150 of second optical inspection means 180 receives about the defective locations of the first sample S1 from first reader 140 with the amplification first sample S1 under microscopic level, and uses said information to obtain the image of the first sample S1.If the first sample S1 has a plurality of defectiveness zone, when flatly moving the second microscope carrier 132b, use second optical inspection means, 180 observations, the first sample S1 so.At this moment, can in the image of the observation first sample S1, accurately check the position and the size of defective.In addition, can at length check the characteristic that is formed at a plurality of male-female structures on the first sample S1, for example the profile of male-female structure, shape, size, height and angle.But the result of service test improves on the technology that forms the male-female structure on the substrate.
After using second optical inspection means, 180 checks, the first sample S1, stop the check of the first sample S1.To not be the defective first sample S1 through robots arm's 300 (not shown)s unloads and it is moved to the second card casket 420 from the second microscope carrier 132b.
Such as preceding text description, after using first optical inspection means, 170 checks, the first sample S1, through using second optical inspection means 180 under microscopic level, to amplify and observing the first sample S1.Yet, the invention is not restricted to this situation.For instance, if after the surface of using first optical inspection means, 170 checks, the first sample S1, confirm the first sample S1 defectiveness, so can be through using scanning electron verifying attachment 250 under microscopic level, to amplify and observing the first sample S1 (S320).Therefore, use robots arm 300 to carry the first sample S1, make it, get in the scanning electron verifying attachment 250 from the vacuum lock 220 that the first microscope carrier 132a of optical check unit 100 passes through scanning electron verification unit 200.Next, the first sample S1 is positioned on the 3rd microscope carrier 232a, and through using the scanning electron microscope 240 usefulness electron beam scannings first sample S1.At this moment, use the third reading communicate by letter with SEM 240 to get device 210, become brightness to catch the image of the first sample S1 from the secondary electron on the surface of the first sample S1 or reflection electronic and with gained quantum intensity-conversion by amplification.Then, observed image is to seek the defective of the first sample S1 under microscopic level.After using the scanning electron verifying attachment 250 checks first sample S1, stop the check of the first sample S1.Then, through robots arm 300 the defective first sample S1 is unloaded and is carried to the second card casket 420 from the second microscope carrier 132b.
Such as preceding text description, through using first optical inspection means 170 after under macro-level or middle sight level, observing the first sample S1 fully, through using scanning electron verifying attachment 250 under microscopic level, to amplify and observing the first sample S1.In this way, check sample (S) accurately, the possibility that sample (S) with macro-level or middle sight level defective or microscopic level defective is passed through is less.
Hereinafter, referring to Fig. 1 to Fig. 6, with providing about explanation according to the method for the service test system test second sample S2 of example embodiment.With not describing or describe simply and the identical program of program described in the foregoing description.The second sample S2 is the substrate that is formed with pyramid male-female structure P2, such as among Fig. 5 (a) and Fig. 6 demonstration.
At first, through using robots arm 300 the second sample S2 to be carried to the first microscope carrier 132a of optical check unit 100 from the first card casket 410.Then, use first optical microscope 110 of optical check unit 100 under macro-level or middle sight level, to amplify and observe the second sample S2 (S100).At this moment, when using first can move horizontally the flatly mobile second sample S2 of parts 133a, observe the whole district of the second sample S2.The image that uses first reader, 140 analyses, second sample S2 communicate by letter with first optical microscope 110 is with definite second sample S2 defectiveness (S200) whether.
If after use first optical inspection means 170 is fully observed the second sample S2, confirm that the second sample S2 is not defective, stop the check of the second sample S2 so.Through robots arm's 300 (not shown)s will not be that the defective second sample S2 unloads and be carried to the 3rd card casket 430 from the first microscope carrier 132a.
If through using first optical inspection means 170 to confirm the second sample S2 defectiveness after under macro-level or middle sight level, observing the second sample S2 fully, the position of the defective of first reader, 140 storages, the second sample S2 so.Then, through using scanning electron verification unit 200 under microscopic level, to amplify and observing the second sample S2 (S320).At length say, use robots arm 300 to carry the second sample S2, make its first microscope carrier 132a get device 210, get in the scanning electron verifying attachment 250 by the third reading of scanning electron verification unit 200 from optical check unit 100.The second sample S2 is positioned on the 3rd microscope carrier 232a, and the scanning electron microscope 240 usefulness electron beam scannings second sample S2.At this moment, use and to get device 210 with the third reading of scanning electron microscope 240 communications and become brightness to catch the image of the second sample S2 from the secondary electron on the surface of the second sample S2 or reflection electronic and with gained quantum intensity-conversion through amplification.Then, observed image is with the defective of the check second sample S2 under microscopic level.
After using the scanning electron verifying attachment 250 checks second sample S2, stop the check of the second sample S2.Through using robots arm's 300 (not shown)s that the defective second sample S2 is unloaded and be carried to the second card casket 420 from the 3rd microscope carrier 232a.
According to current embodiment,, can accurately observe the characteristic of the second sample S2, for example the position of the profile of male-female structure P2 and defective, shape and size although the male-female structure P2 of the second sample S2 has sharp-pointed part.In addition; Because through using first optical inspection means 170 under microscopic level, to amplify and observe the second sample S2 through use scanning electron verifying attachment 250 after under macro-level or middle sight level, checking the second sample S2 fully; So can accurately check the second sample S2, detect less than the possibility of the macro-level of the second sample S2 or middle sight level defective or microscopic level defective less.
In the described embodiment of preceding text, the first substrate W1 that will be formed with semisphere male-female structure P1 is as the first sample S1, and the second substrate W2 that will be formed with pyramid male-female structure P2 is as the second sample S2.Yet, the invention is not restricted to this situation.That is, can be with the substrate that is formed with various male-female structures as sample (S).
Such as preceding text description, the checking system of embodiment comprises: macroscopical optical inspection means, it is in order to transfer large sample in macro-level; The microcosmic optical inspection means, it is in order to transfer large sample in microscopic level; And the scanning electron verifying attachment, it is in order to through amplifying sample with the electron beam scanning samples.Through using macroscopical optical inspection means under macro-level fully after the check sample, shape per sample is through using microcosmic optical inspection means or scanning electron verifying attachment check sample under microscopic level.
Therefore, check sample accurately, the possibility that the defectiveness sample is passed through is less.In addition; When using microcosmic optical inspection means or scanning electron verifying attachment sample survey; The sample defects coordinate that uses macroscopical optical inspection means to detect amplifies and observing samples, can reduce with microcosmic optical inspection means or necessary time of scanning electron verifying attachment sample survey.
In addition, when check has the sample of sharp-pointed part or acute angle portion, use scanning electron verifying attachment check sample under microscopic level.Therefore, optical distortion can not take place.That is, resolution measurement that can some nanometers has the sample of sharp-pointed part or acute angle portion and does not have pattern distortion, and therefore can improve testing accuracy.
Although the method for having described the sample survey system and having used said system test sample with reference to specific embodiment, it is not limited thereto situation.Therefore, the person skilled in the art will easily understand, can under the situation that does not depart from spirit of the present invention and category through accompanying claims definition, make various modifications and change the present invention.
Claims (11)
1. checking system, it comprises:
First optical inspection means, it is in order to amplify and observing samples under macro-level or middle sight level;
Second optical inspection means, it is communicated by letter with said first optical inspection means and in order under microscopic level, to amplify and observing samples;
The scanning electron verifying attachment, it is communicated by letter with said first optical inspection means and said second optical inspection means and in order to through amplifying with the electron beam scanning samples and observing said sample; And
The robots arm, it is in order to be carried to sample said first optical inspection means, said second optical inspection means and said scanning electron verifying attachment.
2. checking system according to claim 1, wherein said scanning electron verifying attachment is caught 3-D view from sample.
3. checking system according to claim 1 and 2, it further comprises:
First microscope carrier, it is placed in position corresponding to the downside of said first optical inspection means to be used to support sample;
Second microscope carrier, it is placed in position corresponding to the downside of said second optical inspection means to be used to support sample; And
The 3rd microscope carrier, it is placed in the position corresponding to the downside of said scanning electron verifying attachment.
4. checking system according to claim 3, it further comprises in order to flatly to move said first microscope carrier and can move horizontally parts to the three to first of said the 3rd microscope carrier and can move horizontally parts.
5. the method for a service test system test sample, said checking system comprises: first optical inspection means, it is in order to amplify under macro-level or middle sight level and to observe said sample; Second optical inspection means, it is in order to amplification under microscopic level and observe said sample; And the scanning electron verifying attachment, it is in order to amplify and to observe said sample, and said method comprises:
Check said sample fully through using said first optical inspection means;
Confirm whether defectiveness of said sample;
At definite said sample is not under the defective situation, stops the check of said sample; And
Under definite defective situation of said sample, use said second optical inspection means or said scanning electron verifying attachment to check said sample according to the surface configuration of said sample.
6. method according to claim 5, wherein before said second optical inspection means of said use or said scanning electron verifying attachment were checked said sample, said method further comprised the said surface configuration of confirming said sample.
7. method according to claim 5, wherein said sample have a plurality of male-female structures on the one of which side.
8. according to each described method in the claim 5 to 7,,, said first optical inspection means of use use said scanning electron verifying attachment to check said sample after checking said sample so if wherein said sample has sharp-pointed part.
9. according to claim 5 or 7 described methods; If wherein said sample does not have sharp-pointed part,, said first optical inspection means of use use said second optical inspection means or said scanning electron verifying attachment to check said sample after checking said sample so.
10. method according to claim 5, if wherein use said second optical inspection means or said scanning electron verifying attachment to check said sample, the part of said sample is exaggerated and observes.
11. method according to claim 5, wherein said second optical inspection means or said scanning electron verifying attachment receive positional information about the defective of said sample so that amplify said sample based on said positional information from said first optical inspection means.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020100103101A KR20120041587A (en) | 2010-10-21 | 2010-10-21 | Sample inspection system and method of inspection using the same |
| KR10-2010-0103101 | 2010-10-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102539447A true CN102539447A (en) | 2012-07-04 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011103224640A Pending CN102539447A (en) | 2010-10-21 | 2011-10-21 | Sample Inspection System And Method Of Inspection Using The Same |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR20120041587A (en) |
| CN (1) | CN102539447A (en) |
| TW (1) | TW201221944A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103604812A (en) * | 2013-10-23 | 2014-02-26 | 上海华力微电子有限公司 | Multipoint positioning method for wafer macroscopic defect |
| CN105651696A (en) * | 2014-11-28 | 2016-06-08 | 财团法人工业技术研究院 | detection instrument and detection method thereof |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102026936B1 (en) * | 2013-03-26 | 2019-10-01 | 삼성디스플레이 주식회사 | Inspection system using scanning electron microscope |
| WO2016125924A1 (en) * | 2015-02-03 | 2016-08-11 | 한국기초과학지원연구원 | Sample cooling device and sample cooling method for linked image detection through optical microscope and electron microscope |
| KR102036067B1 (en) | 2018-04-26 | 2019-10-24 | (주) 인텍플러스 | Optical measurement device for 3d morphology and refractive index |
| KR20230155173A (en) * | 2022-05-03 | 2023-11-10 | 주식회사 엘지에너지솔루션 | System for integrated analysis of fesem and ldi-tof-ms |
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| US20050122508A1 (en) * | 2003-10-31 | 2005-06-09 | Sachio Uto | Method and apparatus for reviewing defects |
| JP2009092673A (en) * | 2008-12-26 | 2009-04-30 | Hitachi Ltd | Review sem |
-
2010
- 2010-10-21 KR KR1020100103101A patent/KR20120041587A/en not_active Application Discontinuation
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2011
- 2011-10-21 CN CN2011103224640A patent/CN102539447A/en active Pending
- 2011-10-21 TW TW100138260A patent/TW201221944A/en unknown
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050122508A1 (en) * | 2003-10-31 | 2005-06-09 | Sachio Uto | Method and apparatus for reviewing defects |
| JP2009092673A (en) * | 2008-12-26 | 2009-04-30 | Hitachi Ltd | Review sem |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103604812A (en) * | 2013-10-23 | 2014-02-26 | 上海华力微电子有限公司 | Multipoint positioning method for wafer macroscopic defect |
| CN105651696A (en) * | 2014-11-28 | 2016-06-08 | 财团法人工业技术研究院 | detection instrument and detection method thereof |
| CN105651696B (en) * | 2014-11-28 | 2019-05-14 | 财团法人工业技术研究院 | detection instrument and detection method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20120041587A (en) | 2012-05-02 |
| TW201221944A (en) | 2012-06-01 |
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