CN102528646A - Semiconductor grinding method - Google Patents
Semiconductor grinding method Download PDFInfo
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- CN102528646A CN102528646A CN2010106204610A CN201010620461A CN102528646A CN 102528646 A CN102528646 A CN 102528646A CN 2010106204610 A CN2010106204610 A CN 2010106204610A CN 201010620461 A CN201010620461 A CN 201010620461A CN 102528646 A CN102528646 A CN 102528646A
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Abstract
The invention discloses a semiconductor grinding method, which comprises the following steps of: providing a fixed abrasive grinding cushion and placing the fixed abrasive grinding cushion on a grinding platform; providing a first solution and activating the fixed abrasive grinding cushion; providing a wafer and grinding on the fixed abrasive grinding cushion; and furthermore, after grinding is finished, cleaning the fixed abrasive grinding cushion with a second solution. Due to the adoption of the grinding method provided by the invention, the unbalance of the surface grinding speed of the wafer can be improved, the surface cleaning effect of the fixed abrasive grinding cushion can be enhanced, the grinding flatness of the wafer is enhanced, the grinding effect of the wafer is enhanced, and the production yield is increased.
Description
Technical field
The present invention relates to semiconductor preparing process, particularly a kind of semiconductor grinding method.
Background technology
In semiconductor preparing process, smooth crystal column surface is of crucial importance for miniaturization of devices and densification, and the method for traditional planar crystal column surface is chemical mechanical milling method (CMP).This method adds lapping liquid between crystal column surface and grinding pad, utilize the chemical reaction of effect and the lapping liquid and the crystal column surface generation of mechanical force, the planarization crystal column surface.Because lapping liquid random distribution in chemical mechanical milling method; Density unevenness is even, and grinding effect is poor, and the lapping liquid utilization rate is low; Therefore the easy contaminated environment of lapping liquid waste liquid is replaced by solidified abrasive grinding method (Fixed Abrasive Polishing) gradually.
The solidified abrasive grinding method; Be that abrasive material and grinding pad are combined; Form the solidified abrasive grinding pad that the surface has regular concaveconvex shape; Like the solidified abrasive grinding pad of being introduced in the United States Patent (USP) 20020049027, then the solidified abrasive grinding pad is placed on the grinding table, the abradant surface that wafer is placed on the solidified abrasive grinding pad grinds.The process of lapping of existing solidified abrasive grinding method, as shown in Figure 1, input cylinder 1051 is transported to solidified abrasive grinding pad 102 on the grinding table 101 with output roller 1052, and with the wetting solidified abrasive grinding pad of grinding agent 102 surfaces; Wafer 103 is absorbed and fixed on the grinding head 104, and its surface is contacted with solidified abrasive grinding pad 102 surfaces; Start power drive; Grinding table 101 drives the underspin commentaries on classics in the rotation of bearing 100; Wafer 103 also drives rotation down at the grinding head 104 of rotation, and its and solidified abrasive grinding pad 102 are done relative motion, makes continuous and solidified abrasive grinding pad 102 mantle frictions in wafer 103 surfaces and quilt is ground.
In above-mentioned solidified abrasive grinding method, the grinding rate of crystal column surface has lack of uniformity.As shown in Figure 2, be that 300 millimeters blank wafer is an example with diameter, abscissa increases progressively by-150 millimeters to 150 millimeters along the diameter of wafer from left to right, and crystal circle center is 0 millimeter; Ordinate is represented grinding rate; Q can find out by the grinding rate distribution curve, in crystal circle center with grinding rate is high all around, can reach 2000 dusts/minute more than; And in other zones, grinding rate is then lower, less than 1000 dusts/minute.This unbalanced grinding rate can cause the crystal column surface out-of-flatness, influences subsequent technique, even can't carry out subsequent technique, causes wafer loss.And in existing Ginding process, after grinding finished, the impurity that produces in the solidified abrasive grinding pad 102 surperficial upward process of lapping is difficult to be cleaned fully to be removed, and influences the grinding of next wafer, has reduced production yield and efficient.
Summary of the invention
The problem that the present invention solves provides a kind of semiconductor grinding method; Solve in the existing Ginding process since crystal column surface grinding rate unbalanced to cause crystal column surface to grind smooth; And solidified abrasive grinding pad surface impurity be difficult to be removed problem; Improve the Grinding Quality of wafer, prevent that wafer from influencing the problem of producing yield and efficient because of the grinding effect difference.
For addressing the above problem, the present invention adopts following technical scheme:
A kind of semiconductor grinding method may further comprise the steps: the solidified abrasive grinding pad is provided, and said solidified abrasive grinding pad is placed on the grinding table; With first solution said solidified abrasive grinding pad is carried out activation processing, make solidified abrasive grinding pad surface possess hydrophilic property; Wafer is positioned on the solidified abrasive grinding pad grinds.
Preferably, said first solution is cationic surfactant solution, and concentration is weight percentage 0.5～10%.
Preferably, the said first solution cationic surfactant is a quaternary ammonium salt.
Preferably, said first solution is alkaline solution, and the pH value is more than or equal to 8.
Preferably, said activating treatment method is: the grinding table rotary speed is less than 20 rev/mins, and soak time was greater than 30 seconds, and first liquid inventory is greater than 300 ml/min.
Preferably, said grinding table rotary speed is 15 rev/mins, and wetting time is 50 seconds, and first liquid inventory is 400 ml/min.
Preferably, wafer is positioned over grind on the solidified abrasive grinding pad after, also comprise step: the solidified abrasive grinding pad is carried out clean with second solution.
Preferably, said second solution is cationic surfactant solution, and concentration is weight percentage 0.5～10%.
Preferably, said cationic surfactant is a quaternary ammonium salt.
Preferably, said second solution is alkaline solution, and the pH value is more than or equal to 8.
Preferably, said clean method is: the grinding table rotary speed is less than 20 rev/mins, and scavenging period was greater than 60 seconds, and second liquid inventory is greater than 300 ml/min.
Preferably, said grinding table rotary speed is 10 rev/mins, and scavenging period is 80 seconds, and second liquid inventory is 400 ml/min.
Compared with prior art, the present invention has the following advantages:
Through before grinding, with first solution solidified abrasive grinding pad is carried out activation processing earlier, make solidified abrasive grinding pad surface have good hydrophily, grinding agent can be evenly distributed on the solidified abrasive grinding pad surface; Begin to grind wafer then; Reach the balanced purpose that improves the crystal column surface grinding rate.
Further; After grinding end; Utilize second solution to clean solidified abrasive grinding pad surface, said second solution can improve the hydrophily on solidified abrasive grinding pad surface, produces in grinding, has excellent cleaning effect attached to the lip-deep impurity of solidified abrasive grinding pad; Improve the Grinding Quality of subsequent wafer, thereby improved the grinding yield and the efficient of wafer.
Description of drawings
Fig. 1 is the sketch map of existing solidified abrasive grinding method;
Fig. 2 be in the existing solidified abrasive grinding method grinding rate at the scatter chart of crystal column surface;
Fig. 3 is the specific embodiment flow chart of semiconductor grinding method of the present invention;
Fig. 4 is a solidified abrasive grinding mat structure generalized section.
The specific embodiment
The inventor finds in the existing solidified abrasive grinding method, and grinding rate is because in the process of lapping in the lack of uniformity that crystal column surface distributes, and grinding agent can not be evenly distributed on that crystal column surface causes.This be because: the abrasive material that the solidified abrasive grinding pad contact with wafer is by organic polymer (organic polymer) and abrasive grains, and such as ceria (ceria), mixing is suppressed and to be formed, and makes solidified abrasive grinding pad surface have stronger hydrophobicity; And the grinding agent that the solidified abrasive grinding method is used is the aqueous solution; Can't be wetting well hydrophobic solidified abrasive grinding pad surface can not be evenly distributed on the whole solidified abrasive grinding pad surface, makes when grinding; Crystal column surface is with after the solidified abrasive grinding pad contacts; The center of crystal column surface and peripheral regions grinding agent are less, cause the center of crystal column surface and peripheral regions grinding rate regional faster than other, can't obtain smooth lapped face.Further, after grinding end,, influenced the grinding of next wafer because the impurity that the hydrophobicity on solidified abrasive grinding pad surface also makes process of lapping produce is difficult to remove with the deionized water cleaning and removing.Therefore, existing polishing produces adverse influence to the production yield and the efficient of wafer.
The inventor through constantly researching and analysing, proposes a solution to the problems referred to above, and be specially: the solidified abrasive grinding pad is provided, and said solidified abrasive grinding pad is placed on the grinding table; With first solution said solidified abrasive grinding pad is carried out activation processing, make solidified abrasive grinding pad surface possess hydrophilic property; Wafer is positioned on the solidified abrasive grinding pad grinds.Semiconductor grinding method of the present invention is before carrying out grinding wafer, earlier with first solution activation solidified abrasive grinding pad surface; Improve the hydrophily on solidified abrasive grinding pad surface; When making follow-up grinding, the grinding agent of interpolation can be evenly distributed on the solidified abrasive grinding pad surface, guarantees crystal column surface and after the solidified abrasive grinding pad contacts; Grinding agent is evenly distributed on whole crystal column surface, improves the harmony of crystal column surface grinding rate.
Further; After grinding end; With second solution solidified abrasive grinding pad is carried out clean; Said second solution can improve the hydrophily on solidified abrasive grinding pad surface, makes the impurity that remains on the solidified abrasive grinding pad in the process of lapping to be removed by complete cleaning and removing, avoids influencing the grinding of next wafer.
Fig. 3 is the specific embodiment flow chart of semiconductor grinding method of the present invention.Elaborate below in conjunction with the accompanying drawing specific embodiments of the invention.
Step S11 provides the solidified abrasive grinding pad, and said solidified abrasive grinding pad is placed on the grinding table.
Fig. 1 is the sketch map of existing solidified abrasive grinding method.In conjunction with Fig. 1, cooperate rolling through input cylinder 1051 and output roller 1052, said solidified abrasive grinding pad 102 is sent on the grinding table 101, and launches to be fixed on the grinding table 101.In process of lapping, input cylinder 1051 does not roll with output roller 1052, and solidified abrasive grinding pad 102 relative grinding tables 101 are static; After grinding end, input cylinder 1051 rolls with output roller 1052, makes solidified abrasive grinding pad 102 move a bit of distance relative to grinding table 101, grinds so that carry out subsequent wafer; Said solidified abrasive grinding pad 102 is fixed on the base (not shown) identical with grinding table 101, and the two is static relatively.
Fig. 4 is a solidified abrasive grinding mat structure generalized section.In conjunction with Fig. 4, said solidified abrasive grinding pad 102 is made up of the abrasive material 1022 on surface and the rigid layer 1021 of substrate, and said abrasive material 1022 mixes compacting by abrasive grains and organic polymer and forms.Abrasive grains commonly used has solid particles such as silica, ceria, alundum (Al, carborundum, boron carbide, zirconia, diamond; Said organic polymer bonds together abrasive grains, and fixedly is bonded on the rigid layer 1021, such as selecting polyacrylate polymers for use.Said abrasive material 1022 surface pressure are processed the concaveconvex shape of rule, such as six rib shapes, cylindric, to play abrasive action.Said solidified abrasive grinding pad 102 can be made up of abrasive material 1022 and multilayer other materials.
Step S12 carries out activation processing with first solution to said solidified abrasive grinding pad, makes solidified abrasive grinding pad surface possess hydrophilic property.
In the present embodiment, said first solution is formed by surfactant and deionized water mixing, and concentration is weight percentage 0.5～10%, is preferably 2%; Solution is alkalescence, and the pH value is more than or equal to 8, and preferred 9; Said surfactant is a cationic surfactant, preferred quaternary ammonium salt.For example, as an instance, first solution selects for use quaternary ammonium salt as surfactant, and concentration is 2%, and the pH value is 9.
Said surfactant (surfactant) is meant to have fixing hydrophilic and oleophilic group, can align on the surface of solution, and the material that surface tension is significantly descended.The molecular structure of surfactant has amphipathic: an end is a hydrophilic radical, and the other end is a lipophilic group; Hydrophilic radical often is the group of polarity, like carboxylic acid, sulfonic acid, sulfuric acid, amino or amido and salt thereof, and also hydroxyl, amide groups, ehter bond etc.; And lipophilic group is nonpolar hydrocarbon chain often, like 8 above hydrocarbon chains of carbon atom.Through after the surfactant activation processing, solidified abrasive grinding pad surface become be easy to by the aqueous solution wetting.
Consider that grinding agent used in desired cleanliness factor of semiconductor fabrication process and the solidified abrasive grinding method mostly is alkalescence, in the present embodiment, said surfactant select for use can be in alkaline solution the cationic surfactant of stable existence.Said cationic surfactant, be the water-soluble generation ionization of its molecule after, the hydrophilic group that links to each other with lipophilic group be the band positive electricity surface-active agent; Lipophilic group generally is long carbochain alkyl, and hydrophilic group is the cation of nitrogen atom, is divided into three types of amine salt, quaternary ammonium salt and heterocyclic types according to the position difference of nitrogen-atoms in molecule, in the present embodiment, and preferred quaternary ammonium salt.
In the present embodiment; Use first solution to the parameter that the solidified abrasive grinding pad carries out activation processing to be: the grinding table rotating speed is less than 20 rev/mins, and soak time was greater than 30 seconds, and first liquid inventory is greater than 300 ml/min; Preferably; The mill rotary speed is 15 rev/mins, and soak time is 50 seconds, and first liquid inventory is 400 ml/min.As an instance of the present invention, said mill rotary speed is 15 rev/mins, and soak time is 50 seconds, and first liquid inventory is 400 ml/min.The flow of said first solution cooperates the rotating speed of grinding table, makes first solution can cover the whole surface of the solidified abrasive grinding pad on the grinding table, and said soak time guarantees that solidified abrasive grinding pad surface by activation fully, forms hydrophilic surface.
Step S13 is positioned over wafer on the solidified abrasive grinding pad and grinds.
In process of lapping, said solidified abrasive grinding pad surface is wetting with grinding agent.Owing in step S12, used first solution-treated solidified abrasive grinding pad surface, make its possess hydrophilic property, therefore in step S13, grinding agent can be evenly distributed on solidified abrasive grinding pad surface.Continuation is with reference to figure 1, and process of lapping is specially: at first, wafer 103 is absorbed and fixed on the grinding head 104 of milling apparatus, to be ground that makes wafer towards solidified abrasive grinding pad 102 surfaces; Through the carrier pipe (not shown) grinding agent is transported on the solidified abrasive grinding pad 102, and wetting solidified abrasive grinding pad 102 whole surfaces; To be ground of wafer 103 is contacted with solidified abrasive grinding pad 102 surfaces; Through control device, drive milling apparatus work then.Specifically be to apply a downward pressure through 104 pairs of wafers 103 of grinding head, and it is rotated by certain speed; Simultaneously, drive the rotating shaft 100 that is connected with grinding table 101 and rotate, drive grinding table 101 and press the predetermined speed rotation together with solidified abrasive grinding pad 102; Wafer 103 and 102 the two the formation relative motion of solidified abrasive grinding pad make wafer 103 surfaces grind by goal pace.
In the present embodiment; Because first solution carries out activation processing to solidified abrasive grinding pad surface; Improve the hydrophily on solidified abrasive grinding pad surface; Make the grinding agent aqueous solution of follow-up interpolation can be evenly distributed on solidified abrasive grinding pad surface, guarantee the harmony of crystal column surface grinding rate, improve the Grinding Quality of wafer.
Step S14 carries out clean with second solution to said solidified abrasive grinding pad.
In conjunction with Fig. 1; Because in process of lapping, wafer 103 can produce many free abrasive grains with the contact-making surface of solidified abrasive grinding pad 102, the external world also can bring some other impurity into; These impurity form the residue on wafer 103 surfaces and solidified abrasive grinding pad 102 surfaces; Therefore when grinding wafer finishes, need to remove these residues with deionized water cleaning wafer 103 surface and solidified abrasive grinding pad 102 surfaces.But because solidified abrasive grinding pad 102 surfaces have hydrophobicity, deionized water is not easy wetting, therefore, is difficult to remove fully the residue on solidified abrasive grinding pad 102 surfaces.In the present embodiment, adopt second solution to clean solidified abrasive grinding pad 102 surfaces, can these removing residues are clean.
In the present embodiment, said second solution is mixed with deionized water by surfactant and forms, and is alkalescence, and the pH value is preferably 9 more than or equal to 8; Said second solution concentration is weight percentage 0.5～10%, is preferably 3%; Said surfactant can be in alkaline environment stable existence.In the present embodiment, surfactant is selected cationic surfactant for use, such as quaternary ammonium salt.For example, as an instance, second solution selects for use quaternary ammonium salt as surfactant, and concentration is 3%, and the pH value is 9.Because said second solution can become hydrophilic surface with solidified abrasive grinding pad 102 surface actives, make that cleaning solidified abrasive grinding pad 102 becomes easy.
In the present embodiment; Said second solution to the clean parameter of solidified abrasive grinding pad 102 is: grinding table 101 rotating speeds are less than 20 rev/mins, and scavenging period was greater than 60 seconds, and second liquid inventory is greater than 300 ml/min; Preferably; Grinding table 101 rotary speeies are 10 rev/mins, and scavenging period is 80 seconds, and second liquid inventory is 400 ml/min.As an instance, said grinding table 101 rotary speeies are 10 rev/mins, and scavenging period is 80 seconds, and second liquid inventory is 400 ml/min.Said grinding table 101 rotating speeds cooperate second liquid inventory and scavenging period; Can fully remove the impurity on the solidified abrasive grinding pad 102 that remains in of process of lapping generation; Before guaranteeing to carry out next grinding wafer, solidified abrasive grinding pad 102 upper surfaces are clean, prevent to influence the grinding effect of next wafer.
In the present embodiment, second solution not only plays the hydrophily of improving solidified abrasive grinding pad 102 surfaces, has also played the effect that cleaning and removing is removed solidified abrasive grinding pad 102 remained on surface impurity.For step S14, also can be earlier with the second solution activation solidified abrasive grinding pad, 102 surfaces, improve hydrophily after, use the impurity of washed with de-ionized water solidified abrasive grinding pad 102 remained on surface again, can clean up solidified abrasive grinding pad 102 equally.
Semiconductor grinding method provided by the invention; Before grinding wafer, with first solution activation processing is carried out on solidified abrasive grinding pad surface earlier, improve the hydrophily on solidified abrasive grinding pad surface; Make the grinding agent aqueous solution of follow-up interpolation can be evenly distributed on solidified abrasive grinding pad surface; Avoid wafer to contact with the solidified abrasive grinding pad when grinding, caused that because of the grinding agent skewness grinding rate of crystal column surface is unbalanced, caused crystal column surface to grind out-of-flatness.Simultaneously; After grinding end; Use second solution cleaning that solidified abrasive grinding pad surface is had activation; Can solve because of solidified abrasive grinding pad surface has the problem that hydrophobicity can't clean up with deionized water, prevent that solidified abrasive grinding pad surface from influencing the grinding of subsequent wafer because of residual impurity.
Though the present invention with preferred embodiment openly as above; But it is not to be used for limiting the present invention; Any those skilled in the art are not breaking away from the spirit and scope of the present invention; Can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.
Claims (12)
1. a semiconductor grinding method is characterized in that, may further comprise the steps:
The solidified abrasive grinding pad is provided, and said solidified abrasive grinding pad is placed on the grinding table;
With first solution said solidified abrasive grinding pad is carried out activation processing, make solidified abrasive grinding pad surface possess hydrophilic property;
Wafer is positioned on the solidified abrasive grinding pad grinds.
2. method according to claim 1 is characterized in that, said first solution is cationic surfactant solution, and concentration is weight percentage 0.5～10%.
3. method according to claim 2 is characterized in that, the said first solution cationic surfactant is a quaternary ammonium salt.
4. method according to claim 1 is characterized in that, said first solution is alkaline solution, and the pH value is more than or equal to 8.
5. method according to claim 1 is characterized in that, said activating treatment method is: the grinding table rotary speed is less than 20 rev/mins, and soak time was greater than 30 seconds, and first liquid inventory is greater than 300 ml/min.
6. method according to claim 5 is characterized in that, said grinding table rotary speed is 15 rev/mins, and wetting time is 50 seconds, and first liquid inventory is 400 ml/min.
7. method according to claim 1 is characterized in that, wafer is positioned over grind end on the solidified abrasive grinding pad after, also comprise step: the solidified abrasive grinding pad is carried out clean with second solution.
8. method according to claim 7 is characterized in that, said second solution is cationic surfactant solution, and concentration is weight percentage 0.5～10%.
9. method according to claim 8 is characterized in that, said cationic surfactant is a quaternary ammonium salt.
10. method according to claim 7 is characterized in that, said second solution is alkaline solution, and the pH value is more than or equal to 8.
11. method according to claim 7 is characterized in that, said clean method is: the grinding table rotary speed is less than 20 rev/mins, and scavenging period was greater than 60 seconds, and second liquid inventory is greater than 300 ml/min.
12. method according to claim 11 is characterized in that, said grinding table rotary speed is 10 rev/mins, and scavenging period is 80 seconds, and second liquid inventory is 400 ml/min.
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Cited By (5)
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| CN109514354A (en) * | 2017-09-19 | 2019-03-26 | 株洲中车时代电气股份有限公司 | The processing method of semiconductor chip table top |
| CN110651072A (en) * | 2017-05-19 | 2020-01-03 | 住友电气工业株式会社 | Silicon carbide substrate and silicon carbide epitaxial substrate |
| CN111906684A (en) * | 2020-08-10 | 2020-11-10 | 泉芯集成电路制造(济南)有限公司 | Grinding method |
| CN111993265A (en) * | 2020-08-28 | 2020-11-27 | 上海华力微电子有限公司 | Method for judging whether adhesive film of grinding head is distorted |
| CN112872916A (en) * | 2020-12-28 | 2021-06-01 | 深圳市裕展精密科技有限公司 | Polishing system and polishing method |
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| CN111993265B (en) * | 2020-08-28 | 2021-11-26 | 上海华力微电子有限公司 | Method for judging whether adhesive film of grinding head is distorted |
| CN112872916A (en) * | 2020-12-28 | 2021-06-01 | 深圳市裕展精密科技有限公司 | Polishing system and polishing method |
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