CN102522181B - Planar spiral inductor with wide-narrow-alternatingly line width and space - Google Patents
Planar spiral inductor with wide-narrow-alternatingly line width and space Download PDFInfo
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- CN102522181B CN102522181B CN 201210001680 CN201210001680A CN102522181B CN 102522181 B CN102522181 B CN 102522181B CN 201210001680 CN201210001680 CN 201210001680 CN 201210001680 A CN201210001680 A CN 201210001680A CN 102522181 B CN102522181 B CN 102522181B
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Abstract
The invention discloses a planar spiral inductor with wide-narrow-alternatingly line width and space, which can be used for an RF integrated circuit. The planar spiral inductor adopts the structure that a spiral inductive insulation layer is arranged on a silicon substrate; the metal thin film is coated on the insulation layer to etch an inductive bottom layer metal layer, so the insulation layer is deposited on the bottom layer metal layer; through holes are formed on the insulation layer so as to connect the bottom layer metal layer and the spiral inductor layer; and the metal thin film is coated on the insulation layer to etch a spiral inductive metal layer with a multi-turn coil; and the pattern of the coil is formed through conductive metal. According to the invention, the metal coil is alternately changed in width form the outer ring to the inner ring, whereas the space is alternately changed in width form the inner ring to the outer ring, thereby reducing the Ohm wastage caused by equivalent resistors connected in series, lowering the proximity effect of the metal wires, improving the quality factor Q value of the spiral inductor, increasing the mutual induction of the wire coils, and also improving the inductance value of the spiral inductor.
Description
Technical field
The invention belongs to electronic technology field, further relate to the live width spacing alternative structure type planar spiral inductor in the microelectronics technology.Metal live width of the present invention and spacing adopt width alternately to change structure, can be used for microwave integrated circuit, filtering net, radio-frequency (RF) transmit-receive circuit and fields such as LC oscillator, radio frequency IC.
Background technology
Along with the development of field of radio frequency integrated circuits, urgent day by day to the demand of high performance planar spiral inductor.Can spiral inductance obtain high quality factor Q value, and high inductance value has become the research focus of current microelectronics technology.
The method of current raising planar spiral inductor performance mainly contains two kinds: a kind of is to be optimized from structural parameters, by the domain structure of reasonably optimizing planar spiral inductor, at utmost reduces ohmic loss and the eddy current loss of spiral inductance, improves inductance Q value.For example adopt pyramidal structure, perhaps adopt the sandwich construction inductance, can effectively improve inductance Q value.Second method is from technology point of view, reduces the coupling between substrate and the inductance as much as possible, reduces the mangneto loss, improves the Q value of inductance.For example insert the diagram form ground shield between silicon substrate and inductance metal level, perhaps with special process silicon substrate such as being emptied at technology all is to reduce the coupling of substrate and inductance, raising inductance Q value from technological angle.
The patent of Shanghai IC Research and Dev Center Co., Ltd.'s application " the non-planar spiral inductor that waits " (application number 200620042881, publication number 200983296) proposes a kind of non-planar spiral inductor that waits.At least one circle wire coil in this spiral inductance and all the other any strip metal coils are in Different Plane, thereby eddy current effect and approach effect influence reduce during high frequency, have improved the quality factor of inductance.But the deficiency that this patent application exists is: mutual inductance reduces between the wire coil, causes inductance value not high, and the processing technology difficulty increases.
The patent " spiral inductor " (application number 01136623, publication number 1350310) of Alps Electric Co., Ltd's application proposes a kind of spiral inductor.This spiral inductor metal wire separation immobilizes, and metal line-width is according to reducing gradually to inner ring from the outer ring, so the inductance internal diameter increases, and the influence of the magnetic line of force reduces, and inductance value increases, and the Q value makes moderate progress.But the deficiency that this patent application exists is: spiral inductor is oversize, does not satisfy current radio frequency integrated circuit small size, the designing requirement of high integration, and spiral inductance metal wire separation and line width variation are single, and Q value, inductance value are improved limited.
Patent " metal live width and intermetallic are apart from the planar spiral inductor of gradual change " (application number 200420114664, publication number 20060329) a kind of metal live width of proposition of Shanghai Huahong's application and intermetallic are apart from the planar spiral inductor of gradual change.The plain conductor live width of this inductance increases from inside to outside successively, and metal wire separation increases along with the increase of live width from inside to outside, thereby has reduced the ohmic loss of metal wire, the quality factor Q value height.But the deficiency that this patent application exists is: reduced the mutual inductance between the spiral inductance coil, inductance value is lower.
Li Qinghua, people such as Shao Zhibiao publish and deliver (the optimization of double layer planar inductance in the high frequency monolithic DC/DC transducer of one piece of article, Li Qinghua, Shao Zhibiao, Geng Li, Electronics and Information Engineering institute of Xi'an Communications University, Xian Electronics Science and Technology University's journal (natural science edition), the 34th the 2nd phase of volume, in April, 2007,321-324]) a kind of live width is proposed in the literary composition and spacing all is the circular planar spiral inductance of definite value.The deficiency that this planar spiral inductor exists is: quality factor q value low excessively (maximum Q value only is 5), and also technological requirement is very high.
People such as Lu Huang have published one piece of document (Lu Huang, Wan-Rong Zhang, Hong-Yun Xie, Pei Shen, Jun-Ning Gan, Yi-Wen Huang, Ning Hu.Analysis and Optimum Design of RF Spiral Inductors on Silicon Substrate, 3rd IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, 2009, Beijing 990-993) proposes a kind of live width in the literary composition, the grading structure planar spiral inductor that spacing dimension reduces from the outer ring to the inner ring has gradually improved the Q value of inductance.The deficiency that this planar spiral inductor exists is: inductance value is not significantly improved.
Summary of the invention
In order to overcome above-mentioned the deficiencies in the prior art, the objective of the invention is to from induction structure parameter angle, provide a kind of metal live width spacing alternation type planar spiral inductor, with the traditional cmos process compatibility.The present invention can improve Q value and inductance value simultaneously.
Thinking of the present invention is to propose on the basis of the loss mechanism of radio frequency passive device, is intended to reduce ohmic loss and the eddy current loss of metallic conductor, strengthens the mutual inductance between the inductance plain conductor.Ohmic loss is caused that by conduction current eddy current loss is caused by eddy current.When conduction current flow through metallic conductor, the ohmic loss that it produces was with relevant with the resistance value of metallic conductor, and this resistance value is directly proportional with resistivity and the total length of metallic conductor, was inversely proportional to the width of plain conductor.Can be drawn by faraday and Lenz's theorem, eddy current effect will cause the magnetic flux density at inductance center to strengthen greatly, and make the current density inequality in the plain conductor, thereby increase the series resistance of metallic conductor.In addition, from eddy current effect as can be known, when two adjacent metallic conductor spacings more hour, magnetic field interaction between them is more strong, and the approach effect influence is serious, causes the current density in the metallic conductor more inhomogeneous, make the series resistance of metallic conductor further become big, thereby influence inductance Q value.And the inductance leads spacing is more little, and it is just more serious that plain conductor is influenced by the magnetic line of force, causes inductance value to descend.Based on above-mentioned principle, the present invention proposes metal live width and the metal wire separation of alternately variation, and the metal wire that adopts width alternately to change makes to increase the inductance internal diameter by blue band outer edge line width reduction eddy current loss; Be main outer ring conductor to ohmic loss, adopt the wide metal wire of width, reached the purpose that reduces the metallic conductor ohmic loss.In addition, adopt the spacing alternative structure, reduced the magnetic line of force influence between the plain conductor, strengthen the mutual inductance between lead, improved inductance value.Therefore, the present invention adopts metal wire separation can strengthen mutual inductance from the outer ring to the inner ring alternative structure, reduces the wastage, and improves inductance Q value and inductance value.
The present invention includes silicon substrate, insulating barrier, planar spiral inductor bottom metal layer, through hole, planar spiral inductor metal level, growth has the insulating barrier of spiral inductance on the silicon substrate, metal-coated films etching inductance bottom metal layer on the insulating barrier, depositing insulating layer on the bottom metal layer, the insulating barrier etching through hole connects bottom metal layer and spiral inductance layer, metal-coated films etching spiral inductance metal level on the insulating barrier, spiral inductance metal level coil is multiturn, and coil pattern is made of conducting metal; The metal live width of described planar spiral inductor metal level alternately changes to inner ring width from the outer ring, and metal wire separation alternately changes to inner ring width from the outer ring.
The present invention compared with prior art has the following advantages:
First, metal live width of the present invention adopts alternative structure, reduce the ohmic loss of inductance plain conductor, overcome in the prior art and cause the low excessively defective of inductance Q value because the inductance ohmic loss is excessive, made the present invention improve inductance Q value on the basis that does not change the domain size thus.
Second, metal live width of the present invention adopts alternative structure, the inductance internal diameter reduces, reduced eddy current loss, overcome in the prior art and to have caused the low excessively defective of inductance Q value because eddy current loss is excessive, make the present invention thus on the basis that does not change the domain size, reduced eddy current loss, improved inductance Q value.
The 3rd, metal wire separation of the present invention adopts alternative structure, reduced the approach effect between lead, overcome in the prior art because of the approach effect influence, the defective that causes the inductance equivalent series resistance to increase, make the present invention reduce the influence of approach effect in the inductance coil thus, series equivalent resistance is descended, improved inductance Q value.
The 4th, metal wire separation of the present invention adopts alternative structure, has strengthened the magnetic flux in the plain conductor, reduced the influence of the magnetic line of force, overcome in the prior art the not strong defective of mutual inductance between inductance coil, made the present invention strengthen the mutual inductance between inductance coil thus, improved inductance value.
The 5th, the present invention and traditional cmos compatibility have overcome and have used special process to cause inductance to add the defective of the technology difficulty increase in man-hour in the prior art, make the present invention process simply thus, are easy to realize.
Description of drawings
Fig. 1 is structural representation of the present invention;
Fig. 2 is the present invention and conventional helical inductance quality factor q value simulation result comparison diagram;
Fig. 3 is the present invention and conventional helical inductance inductance value simulation result comparison diagram.
Embodiment
Below in conjunction with accompanying drawing the present invention is done and to describe in further detail.
Live width spacing alternative structure type planar spiral inductor shown in Figure 1 comprises silicon substrate, insulating barrier, planar spiral inductor bottom metal layer, through hole, planar spiral inductor metal level.At the thick thick oxide of silica-based growth one deck 1 μ m of 450 μ m, form insulating barrier, the thick titanium film of sputter one deck 10nm on the insulating barrier, the thick metallic film of plating 500nm on the titanium film surface, etching metallic film, form the spiral inductance bottom metal layer, the thick oxide of deposition 900nm forms insulating barrier on the spiral inductance bottom metal layer, and the etching insulating barrier forms through hole, the thick metallic film of plating 2 μ m on the insulating barrier, selectively etching forms the spiral inductance metal level.
The metal live width of planar spiral inductor metal level replaces variation from the outer ring to inner ring width and refers to that plain conductor 1,5,9,12,13 width are that width is the wideest in all plain conductors; Plain conductor 2,6,10,14 width narrow down than plain conductor 1,5,9,12,13; Plain conductor 3,7,11,15 width broaden than plain conductor 2,6,10,14 width, and its width is narrower than plain conductor 1,5,9,12,13; Metallic conductor 4,8 narrowed width, its width are narrower than plain conductor 2,6,10,14 width.
The metal wire separation of planar spiral inductor metal level alternately changes to inner ring width from the outer ring and refers to, plain conductor 1,5,9,13 with plain conductor 2,6,10,14 between spacing be maximum in the wire pitch; Plain conductor 2,6,10,14 and plain conductor 3,7,11,15 between spacing less than plain conductor 1,5,9,13 and plain conductor 2,6,10,14 between spacing; Plain conductor 3,7 and plain conductor 4,8 between spacing greater than plain conductor 2,6 and metallic conductor line 3,7 between spacing.
The value range of plain conductor width is 0.03 micron～20 microns.The scope of the distance values between the plain conductor is 0.04 micron～10 microns.The scope of planar spiral inductor external diameter is 0.1 micron～400 microns.
Figure 2 shows that the planar spiral inductor Q value simulation result comparison diagram that inductance quality factor q value of the present invention and conventional metals live width spacing are fixing.Wherein solid line is represented spiral inductance quality factor q value of the present invention with the change curve of frequency, and dotted line represents that conventional planar spiral inductance quality factor q value is with the change curve of frequency.
Shown in Figure 2, inductance quality factor q value of the present invention reaches maximum 14.86 when 2.70GHz, and the inductance quality factor q value of conventional planar spiral inductance reaches maximum 13.37 when 2.55GHz.Q value of the present invention has improved 11% than the conventional helical inductance Q value.
Figure 3 shows that the inductance value simulation result comparison diagram of the planar spiral inductor that inductance value of the present invention and conventional metals live width spacing are fixing.Wherein solid line is represented spiral inductance inductance value of the present invention with the change curve of frequency, and dotted line represents that conventional planar spiral inductance inductance value is with the change curve of frequency.
Shown in Figure 3, inductance value of the present invention inductance value when 2GHz is 7.31nH, and conventional planar spiral inductance inductance value when 2GHz is 5.52nH.The inductance value of the more traditional inductance of inductance value of the present invention has improved 36%.
From simulation result as can be known, adopt live width spacing alternative structure type planar spiral inductor of the present invention can effectively improve the performance of spiral inductance.
Claims (4)
1. a live width spacing alternative structure type planar spiral inductor comprises silicon substrate, insulating barrier, planar spiral inductor bottom metal layer, through hole and planar spiral inductor metal level; Growth has the insulating barrier of spiral inductance on the described silicon substrate, metal-coated films etching planar spiral inductor bottom metal layer on the insulating barrier, depositing insulating layer on the bottom metal layer, insulating barrier etching through hole on the bottom metal layer, metal-coated films etching planar spiral inductor metal level on the insulating barrier on the bottom metal layer, through hole connects bottom metal layer and planar spiral inductor metal level, constitutes coil pattern by plain conductor in the planar spiral inductor metal level, and coil pattern is multiturn;
Described live width spacing alternative structure type planar spiral inductor is characterised in that the plain conductor live width of described planar spiral inductor metal level alternately changes to inner ring width from the outer ring, and the plain conductor spacing alternately changes to inner ring width from the outer ring;
The plain conductor live width of described planar spiral inductor metal level replaces variation from the outer ring to inner ring width and refers to, certainly outside to inside, the width of the 1st circle plain conductor is that width is the wideest in all plain conductors; The width of the 2nd circle plain conductor is than the narrowed width of the 1st circle plain conductor; The width of the 3rd circle plain conductor broadens than the width of the 2nd circle plain conductor, but is narrower than the width of the 1st circle plain conductor; The width of the 4th circle plain conductor encloses the narrowed width of plain conductor than the 3rd, and also is narrower than the width of the 2nd circle plain conductor;
The plain conductor spacing of described planar spiral inductor metal level replaces variation from the outer ring to inner ring width and refers to, certainly outside to inside, the spacing between the 1st circle plain conductor and the 2nd circle plain conductor is maximum in the wire pitch; Spacing between the 2nd circle plain conductor and the 3rd circle plain conductor is less than the spacing between the 1st circle plain conductor and the 2nd circle plain conductor; Spacing between the 3rd circle plain conductor and the 4th circle plain conductor is greater than the spacing between the 2nd circle plain conductor and the 3rd circle plain conductor, less than the spacing between the 1st circle plain conductor and the 2nd circle plain conductor.
2. live width spacing alternative structure type planar spiral inductor according to claim 1 is characterized in that the value range of described plain conductor width is 0.03 micron～20 microns.
3. live width spacing alternative structure type planar spiral inductor according to claim 1 is characterized in that the scope of the distance values between the described plain conductor is 0.04 micron～10 microns.
4. live width spacing alternative structure type planar spiral inductor according to claim 1 is characterized in that the scope of the external diameter that described planar spiral inductor external diameter is the outmost turns plain conductor is 0.1 micron～400 microns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN 201210001680 CN102522181B (en) | 2012-01-04 | 2012-01-04 | Planar spiral inductor with wide-narrow-alternatingly line width and space |
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| CN 201210001680 CN102522181B (en) | 2012-01-04 | 2012-01-04 | Planar spiral inductor with wide-narrow-alternatingly line width and space |
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| CN102522181B true CN102522181B (en) | 2013-08-14 |
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| US12094631B2 (en) | 2018-10-17 | 2024-09-17 | Anhui Anuki Technologies Co., Ltd. | Chip inductor and method for manufacturing same |
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| CN1153272C (en) * | 2001-03-23 | 2004-06-09 | 华邦电子股份有限公司 | Process for preparing semiconductor device containing high-Q inductor and its structure |
| CN101017816A (en) * | 2007-02-16 | 2007-08-15 | 上海集成电路研发中心有限公司 | Design method for on-chip spiral inductor with the wearing metal conductor line width and gap |
| KR100862489B1 (en) * | 2007-06-11 | 2008-10-08 | 삼성전기주식회사 | Spiral inductor |
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| US12094631B2 (en) | 2018-10-17 | 2024-09-17 | Anhui Anuki Technologies Co., Ltd. | Chip inductor and method for manufacturing same |
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