CN102522181B - Planar spiral inductor with wide-narrow-alternatingly line width and space - Google Patents

Planar spiral inductor with wide-narrow-alternatingly line width and space Download PDF

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CN102522181B
CN102522181B CN 201210001680 CN201210001680A CN102522181B CN 102522181 B CN102522181 B CN 102522181B CN 201210001680 CN201210001680 CN 201210001680 CN 201210001680 A CN201210001680 A CN 201210001680A CN 102522181 B CN102522181 B CN 102522181B
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metal
width
spiral inductor
layer
metal wire
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CN102522181A (en
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田文超
孙昊
杨银堂
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西安电子科技大学
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Abstract

本发明公开一种可应用于射频集成电路的线宽间距交变结构型平面螺旋电感,硅衬底上生长有螺旋电感的绝缘层,绝缘层上镀金属薄膜刻蚀电感底层金属层,底层金属层上沉积绝缘层,绝缘层刻蚀通孔,连接底层金属层和螺旋电感层,绝缘层上镀金属薄膜刻蚀螺旋电感金属层,螺旋电感金属层线圈为多匝,线圈图案由导电金属构成。 The present invention discloses a radio frequency integrated circuit may be applied to a line width of the pitch of the alternating structure type flat spiral inductor, a helical inductor growth insulating layer on the silicon substrate, etching the metallized film inductor underlying metal layer on the insulating layer, the underlying metal layer is deposited on the insulating layer, etching the insulating layer through-hole connecting the metal layer and the underlying layer spiral inductor, a thin film etched metallised spiral inductor on the insulating layer a metal layer, the metal layer spiral inductor coil is a multi-turn coil made of a conductive metal pattern . 本发明的金属线宽自外圈向内圈宽窄交替变化,金属线间距自外圈向内圈宽窄交替变化,降低了串联等效电阻导致的欧姆损耗,降低了金属导线间的临近效应,提高了螺旋电感品质因数Q值,增加了金属线圈之间的互感,提高了螺旋电感的电感值。 Metal width from the outer ring of the present invention alternately to change the inner width, the wire spacing from the inner to the outer ring width alternation, resulting in reducing the equivalent series resistance ohmic losses, reducing the proximity effect between the metal wire, improve a spiral inductor quality factor Q value, increasing the mutual inductance between the metal coil to improve the inductance value of the spiral inductor.

Description

线宽间距交变结构型平面螺旋电感 Structural width pitch alternating planar spiral inductor

技术领域 FIELD

[0001] 本发明属于电子技术领域,更进一步涉及微电子技术领域中的线宽间距交变结构型平面螺旋电感。 [0001] The present invention belongs to the field of electronics, microelectronics further relates to pitch width art alternating structure type planar spiral inductor. 本发明的金属线宽和间距采用宽窄交替变化结构,可用于微波集成电路、滤波网、射频收发电路和LC振荡器、射频IC等领域。 Metal line and space width of the present invention employ alternate structures can be used in microwave integrated circuits, the filtering net, and the radio-frequency transceiver circuits LC oscillator, RF IC fields.

背景技术 Background technique

[0002] 随着射频集成电路领域的发展,对高性能的平面螺旋电感的需求日益迫切。 [0002] With the development of radio frequency integrated circuits, the demand for high performance planar spiral inductor increasingly urgent. 螺旋电感能否得到高品质因数Q值,高电感值已经成为当今微电子技术领域的研究热点。 Spiral inductor can obtain a high quality factor Q, a high inductance value has become a hot topic in today's microelectronics technology.

[0003] 当前提高平面螺旋电感性能的方法主要有两种:一种是从结构参数进行优化,通过合理优化平面螺旋电感的版图结构,最大程度降低螺旋电感的欧姆损耗和涡流损耗,提高电感Q值。 Method [0003] Current spiral inductor improved performance there are mainly two: one is from the optimized structure parameters, the rational optimization of layout structure of a planar spiral inductor, to minimize ohmic losses and eddy current loss of the spiral inductors, the inductance increase Q value. 例如采用锥形结构,或者采用多层结构电感,可有效提高电感Q值。 E.g. using conical configuration, structure or multilayer inductor, inductance can effectively improve the Q value. 第二种方法是从工艺角度出发,尽可能的降低衬底与电感之间的耦合,减小磁致损耗,提高电感的Q值。 The second way is from the perspective of the process, to reduce the coupling between the substrate and the inductor as possible, reduce the Q value of the magnetic induced loss increase inductance. 例如在硅衬底与电感金属层之间插入图形式接地屏蔽层,或者用特殊工艺将硅衬底掏空等技术均是从工艺角度降低衬底与电感的耦合,提高电感Q值。 For example interposed between the silicon substrate and the inductor form the metal layer in FIG ground shield, the silicon substrate or the like techniques being emptied to reduce inductance coupled to the substrate and from the perspective of the process by a special process to improve the Q value of the inductor.

[0004] 上海集成电路研发中心有限公司申请的专利“非等平面螺旋电感”(申请号200620042881,公开号200983296)提出一种非等平面螺旋电感。 [0004] IC R & D Center Shanghai Ltd. patent application "Non planar spiral inductor" (Application No. 200620042881, Publication No. 200 983 296) proposes a non-planar spiral inductor and the like. 该螺旋电感中的至少一圈金属线圈与其余任意一条金属线圈处于不同平面,从而高频时涡流效应和临近效应影响降低,提高了电感的品质因数。 At least one turn of the spiral metal coil inductance coil with the remaining metal is any one of a different plane, so that when the high frequency eddy current and proximity effects influence reduced, thereby improving the quality factor of the inductor. 但是该专利申请存在的不足是:金属线圈之间互感降低,导致电感值不高,而且加工工艺难度增大。 But the shortcomings of this patent application is: to reduce the mutual inductance between the metal coil, resulting in an inductance value is not high, and processing more difficult.

[0005] 阿尔卑斯电气株式会社申请的专利“螺旋电感器”(申请号01136623,公开号1350310)提出一种螺旋电感器。 [0005] Patent application Alps Electric "spiral inductor" (Application No. 01136623, Publication No. 1350310) proposes a spiral inductor. 该螺旋电感器金属线间距固定不变,金属线宽度按照从外圈向内圈逐渐减小,因此电感内径增大,磁力线的影响减少,电感值增大,Q值有所改善。 The spiral inductor fixed metal line pitch, line width according to the metal gradually decreases from the outer to the inner ring, the inner diameter of the inductance is increased to reduce the influence of magnetic field lines, the inductance value increases, Q value is improved. 但是该专利申请存在的不足是:螺旋电感器尺寸过大,不满足当今射频集成电路小尺寸,高集成度的设计要求,螺旋电感金属线间距与线宽变化单一,Q值、电感值改善有限。 However, this patent application is the shortcomings: spiral inductor size is too large, does not satisfy the limited size of today's radio frequency integrated circuit, the design requirements of high integration, the metal line pitch spiral inductor and a single line width variation, Q value, to improve the inductance value .

[0006] 上海华虹(集团)有限公司申请的专利“金属线宽及金属间距渐变的平面螺旋电感”(申请号200420114664,公开号20060329)提出一种金属线宽及金属间距渐变的平面螺旋电感。 [0006] Patent Shanghai Hua Hong (Group) Co., Ltd. Application "metal width and spacing of the gradation metal planar spiral inductor" (Application No. 200420114664, Publication No. 20,060,329) made of a metal planar spiral inductor line width and spacing of the metal gradation . 该电感的金属导线线宽从内到外依次增大,金属线间距从内到外随着线宽的增大而增大,从而降低了金属线的欧姆损耗,品质因素Q值高。 Metal wires of the inductor width gradually increases from the inside to the outside, the metal line pitch with increasing width increases from the inside to the outside, thereby reducing ohmic loss metal wire, a high quality factor Q value. 但是该专利申请存在的不足是:降低了螺旋电感线圈之间的互感,电感值较低。 However, the present patent application is insufficient: reducing the mutual inductance between the spiral inductor, a lower inductance value.

[0007] 李清华,邵志标等人公开发表发表一篇文章(高频单片DC/DC转换器中双层平面电感的优化,李清华,邵志标,耿莉,西安交通大学电子与信息工程学院,西安电子科技大学学报(自然科学版),第34卷第2期,2007年4月,321-324])文中提出一种线宽和间距都为定值的圆形平面螺旋电感。 [0007] Li Qinghua, Shao Zhibiao, who published an article published (high-frequency monolithic DC / DC converter optimized double flat inductor, Li Qinghua, SHAO standard, Geng Li, School of Electronics and Information Engineering, Xi'an Jiaotong University, Xi'an Electronic University of Science and Technology (Natural Science), Vol. 34, No. 2, April 2007, 321-324]) This paper presents a line width and spacing is constant circular spiral inductor. 这种平面螺旋电感存在的不足是:品质因数Q值过低(最大Q值仅为5),而且工艺要求非常高。 The problem with this lack of planar spiral inductor is: too low quality factor Q (Q-value maximum of only 5), and the process is very high.

[0008] Lu Huang 等人公开发表了一篇文献(Lu Huang, Wan-Rong Zhang, Hong-YunXie,Pei Shen,Jun-Ning Gan, Y1-Wen Huang, Ning Hu.Analysis and OptimumDesign of RF Spiral Inductors on Silicon Substrate,3rd IEEE InternationalSymposium on Microwave, Antenna, Propagation and EMC Technologies for WirelessCommunications, 2009, Beijing, 990-993)文中提出一种线宽、间距尺寸从外圈到内圈逐渐减小的渐变结构平面螺旋电感,提高了电感的Q值。 [0008] Lu Huang et al., Discloses an article published literature (Lu Huang, Wan-Rong Zhang, Hong-YunXie, Pei Shen, Jun-Ning Gan, Y1-Wen Huang, Ning Hu.Analysis and OptimumDesign of RF Spiral Inductors on Silicon Substrate, 3rd IEEE InternationalSymposium on Microwave, Antenna, Propagation and EMC Technologies for WirelessCommunications, 2009, Beijing, 990-993) proposed a paper width, pitch size gradually decreases from the outer to the inner spiral inductor graded structure , the Q value of the inductor is improved. 这种平面螺旋电感存在的不足是:电感值没有明显的改善。 The problem with this deficiency is planar spiral inductor: inductance value is not significantly improved.

发明内容 SUMMARY

[0009] 为了克服上述现有技术的不足,本发明的目的在于从电感结构参数角度出发,提供一种金属线宽间距交变型平面螺旋电感,与传统CMOS工艺兼容。 [0009] In order to overcome the disadvantages of the prior art, an object of the present invention is an inductor structure parameters from an angle, one metal line width to provide alternating pitch type planar spiral inductor, is compatible with conventional CMOS processes. 本发明能同时提高Q值和电感值。 The present invention can simultaneously improve the Q value and inductance value.

[0010] 本发明的思路是在射频无源器件的损耗机理的基础上提出的,旨在减小金属导体的欧姆损耗和涡流损耗,增强电感金属导线间的互感。 [0010] The idea of ​​the invention is based on the mechanism of loss of RF passive components on the proposed intended to reduce ohmic losses and the metal conductor eddy current loss and to increase mutual inductance between the metal wires. 欧姆损耗由传导电流引起,涡流损耗由涡流电流引起。 Ohmic loss caused by the conduction current, eddy current loss caused by eddy currents. 当传导电流流过金属导体时,它所产生的欧姆损耗将与金属导体的电阻值有关,该电阻值与金属导体的电阻率和总长度成正比,与金属导线的宽度成反比。 When current flows through the conductive metallic conductor, it produces the ohmic losses and the resistance value of the relevant metal conductor, the width is inversely proportional to the resistivity of the resistance value of the metal conductor and proportional to the total length of the metal wire. 由法拉第和楞次定理可以得出,涡流效应将导致电感中心的磁感应强度大大增强,并使金属导线中的电流密度不平均, 从而增大了金属导体的串联电阻。 Can be derived from the Faraday and Lenz's theorem, the eddy currents cause the magnetic induction of the inductor center greatly enhanced, and the current density does not mean the metal wire, thereby increasing the series resistance of the metal conductors. 另外,从涡流效应可知,当两相邻金属导体间距越小时,它们之间的磁场相互作用越强烈,临近效应影响严重,导致金属导体中的电流密度更加不均匀,使金属导体的串联电阻进一步变大,从而影响电感Q值。 Further, apparent from the vortex effect, when the two adjacent metal conductor pitch is smaller, a magnetic field more intense interaction between them, seriously affect the proximity effect, resulting in a current density of the metal conductor more uneven, the series resistance of the metal conductors further becomes large, which affects the Q value of the inductance. 而且,电感导线间距越小,金属导线受磁力线影响就越严重,导致电感值下降。 Further, wire inductance smaller the pitch, the metal wire in the magnetic field lines more severe impact, resulting in decreased inductance. 基于上述原理,本发明提出交替变化的金属线宽和金属线间距,采用宽窄交替变化的金属线,使得内圈线宽窄,增大电感内径,降低涡流损耗;对欧姆损耗为主的外圈导体,采用宽度宽的金属线,达到了降低金属导体欧姆损耗的目的。 Based on the above principles, the present invention provides alternating metal width and spacing of the metal lines, use of alternating wire width, so that the line width of the inner ring, the inner diameter of the inductor is increased, reducing the eddy current loss; ohmic losses based on the outer conductor , wider use of metal lines, achieve a lower ohmic loss of the metal conductor. 另外,采用间距交变结构,降低了金属导线之间的磁力线影响,增强导线间的互感,提高了电感值。 Further, using an alternating pitch structure, reducing the impact force between the metal line conductors, enhanced mutual inductance between wires increase inductance value. 因此,本发明采用金属线间距从外圈到内圈交变结构可以增强互感,降低损耗,提高电感Q值和电感值。 Accordingly, the present invention uses the metal line pitch alternating from the outer to the inner structure can enhance the mutual inductance, low loss and high Q inductors and the inductance value.

[0011] 本发明包括硅衬底、绝缘层、平面螺旋电感底层金属层、通孔、平面螺旋电感金属层,硅衬底上生长有螺旋电感的绝缘层,绝缘层上镀金属薄膜刻蚀电感底层金属层,底层金属层上沉积绝缘层,绝缘层刻蚀通孔,连接底层金属层和螺旋电感层,绝缘层上镀金属薄膜刻蚀螺旋电感金属层,螺旋电感金属层线圈为多匝,线圈图案由导电金属构成;所述平面螺旋电感金属层的金属线宽自外圈向内圈宽窄交替变化,金属线间距自外圈向内圈宽窄交替变化。 [0011] The present invention includes a silicon substrate, an insulating layer, planar spiral inductor underlying metal layer, vias, metal layer planar spiral inductor, a helical inductor grown insulating layer on a silicon substrate, a metallization layer on the insulating film is etched inductor underlying metal layer, a metal layer is deposited on the underlying insulating layer, etching the insulating layer through-hole connecting the metal layer and the underlying layer spiral inductor, a thin film etched metallised spiral inductor on the insulating layer a metal layer, the metal layer spiral inductor multiturn coil, coil pattern formed of a conductive metal; the spiral inductor from the metal layer is a metal line width of the inner ring to the outer ring width alternation, the wire spacing from the inner to the outer ring of alternating width.

[0012] 本发明与现有技术相比具有以下优点: [0012] The present invention and the prior art has the following advantages:

[0013] 第一,本发明金属线宽采用交变结构,降低了电感金属导线的欧姆损耗,克服了现有技术中因电感欧姆损耗过大而导致电感Q值过低的缺陷,由此使得本发明在不改变版图大小的基础上提高了电感Q值。 [0013] First, the present invention employs a metal line width of the alternating structure, reducing the ohmic losses in the inductor metal wire, the prior art overcomes the defects due to the inductance caused by excessive ohmic loss Q value of the inductance low, thereby making the present invention without changing the size of the layout to improve the Q value of the inductor.

[0014] 第二,本发明金属线宽采用交变结构,电感内径减小,降低了涡流损耗,克服了现有技术中因涡流损耗过大而导致电感Q值过低的缺陷,由此使得本发明在不改变版图大小的基础上,降低了涡流损耗,提高了电感Q值。 [0014] Second, the present invention employs a metal line width of an alternating structure, the inner diameter of the inductor is reduced, reducing the eddy current loss, the prior art overcomes the defects due to eddy current loss caused by the inductance is too large Q value is too low, thereby making the present invention without changing the layout size, reducing the eddy current loss to improve the Q value of the inductance.

[0015] 第三,本发明金属线间距采用交变结构,降低了导线间的临近效应,克服了现有技术中因临近效应影响,导致电感等效串联电阻增大的缺陷,由此使得本发明降低了电感线圈中临近效应的影响,使串联等效电阻下降,提高了电感Q值。 [0015] Third, the wire spacing using the present invention, an alternating structure, reducing the proximity effect between the conductors, to overcome the prior art affected by the proximity effect, leading to increased equivalent series resistance of the inductor defects, thereby enabling invention reduces the influence of the proximity effect of the inductive coil in the equivalent series resistance is reduced to improve the Q value of the inductance.

[0016] 第四,本发明金属线间距采用交变结构,增强了金属导线中的磁通量,降低了磁力线的影响,克服了现有技术中电感线圈间互感不强的缺陷,由此使得本发明增强了电感线圈间的互感,提高了电感值。 [0016] Fourth, the present invention employs the metal line pitch alternating structure, enhances the flux of metal wires reduces the effect of magnetic lines of force, overcomes the prior art is not strong mutual inductance between inductor defects, thereby enabling the present invention enhancing the mutual inductance between the inductor, the inductance value increased.

[0017] 第五,本发明与传统CMOS兼容,克服了现有技术中使用特殊工艺导致电感加工时的工艺难度增大的缺陷,由此使得本发明加工简单,易于实现。 [0017] Fifth, the present invention is compatible with conventional CMOS, overcomes the drawbacks of the prior art process results in the use of special processes increase the difficulty of machining the inductance, thereby enabling processing of the present invention is simple and easy to implement.

附图说明 BRIEF DESCRIPTION

[0018] 图1为本发明的结构示意图; [0018] FIG. 1 is a schematic view of the structure of the present invention;

[0019] 图2为本发明与传统螺旋电感品质因数Q值仿真结果比较图; [0019] FIG 2 is a conventional spiral inductor and the quality factor Q value comparing the simulation results of FIG invention;

[0020] 图3为本发明与传统螺旋电感电感值仿真结果比较图。 [0020] Figure 3 is a conventional spiral inductor with inductance simulation results comparing the invention FIG.

具体实施方式 Detailed ways

[0021] 下面结合附图对本发明做进一步详细描述。 [0021] The following drawings further detailed description of the invention bind.

[0022] 图1所示的线宽间距交变结构型平面螺旋电感,包括硅衬底、绝缘层、平面螺旋电感底层金属层、通孔·、平面螺旋电感金属层。 Width spacing shown in FIG. 1 [0022] Alternating type planar spiral inductor structure, comprising a silicon substrate, the insulating layer, the underlying metal layer planar spiral inductor, the through-holes, a metal layer planar spiral inductor. 在450 μ m厚的硅基上生长一层I μ m厚的氧化物,形成绝缘层,绝缘层之上溅射一层IOnm厚的钛金薄膜,钛金薄膜表面之上镀500nm厚的金属薄膜,刻蚀金属薄膜,形成螺旋电感底层金属层,螺旋电感底层金属层之上沉积900nm厚的氧化物,形成绝缘层,刻蚀绝缘层形成通孔,绝缘层之上镀2 μ m厚金属薄膜,有选择性的刻蚀形成螺旋电感金属层。 Grown on the silicon layer 450 μ m thick oxide I μ m thick, insulating layer is formed on the insulating film layer sputtered titanium layer IOnm thick titanium film over a 500nm thick metal plated film, etching the metal film to form an underlying metal layer spiral inductor, inductor coil over an underlying metal deposited 900nm thick oxide layer, an insulating layer, etching the insulating layer through hole is formed on the insulating layer 2 μ m thick metal plating films, selective etching of the metal layer formed spiral inductor.

[0023] 平面螺旋电感金属层的金属线宽自外圈向内圈宽窄交替变化是指,金属导线1、5、 [0023] The line width of the metal layer is a metal planar spiral inductor from the outer to the inner width alternate means, a metal wire 1,5,

9、12、13宽度是所有金属导线中宽度最宽的;金属导线2、6、10、14宽度较金属导线1、5、9、12,13变窄;金属导线3、7、11、15宽度较金属导线2、6、10、14宽度变宽,其宽度窄于金属导线1、5、9、12、13 ;金属导体4、8宽度变窄,其宽度窄于金属导线2、6、10、14的宽度。 9,12 width all the width of the widest metal wires; a metal wire 2,6,10,14 1,5,9,12,13 narrower width than a metal wire; 3,7,11,15 metal wires 2,6,10,14 width than the width of the metal wire is widened, which is narrower than metal wire 1,5,9,12,13; 4,8 narrowing the width of the metal conductor, the metal wire which is narrower than 2,6, 10, 14 of width.

[0024] 平面螺旋电感金属层的金属线间距自外圈向内圈宽窄交替变化是指,金属导线1、 [0024] The metal wire spiral inductor metal layer from the outer to the inner pitch width alternate means, a metal wire,

5、9、13与金属导线2、6、10、14之间的间距是导线间距中最大的;金属导线2、6、10、14与金属导线3、7、11、15之间的间距小于金属导线1、5、9、13与金属导线2、6、10、14之间的间距;金属导线3、7与金属导线4、8之间的间距大于金属导线2、6与金属导体线3、7之间的间距。 5,9,13 and the spacing between the metal wires is 2,6,10,14 largest conductor spacing; 2,6,10,14 spacing between the metal wires and metal wires 3,7,11,15 less than 2,6,10,14 spacing between the metal wires and metal wires 1,5,9,13; 4,8 spacing between the metal wires of the metal wire is greater than 3,7 2,6 metal wire and the metal conductor wires 3 , the spacing between the 7.

[0025] 金属导线宽度的范围值为0.03微米〜20微米。 [0025] a metal conductor width range of 0.03 ~ 20 [mu] m microns. 金属导线之间的间距值的范围为 The distance between the range of values ​​for the metallic wire

0.04微米〜10微米。 0.04 [mu] m ~ 10 [mu] m. 平面螺旋电感外径的范围为0.1微米〜400微米。 Spiral inductor outer diameter range of 0.1 m ~ 400 m.

[0026] 图2所示为本发明的电感品质因数Q值与传统金属线宽间距固定的平面螺旋电感Q值仿真结果比较图。 Inductor quality factor Q of the present invention shown with a conventional fixed pitch width of the metal planar spiral inductor Q value comparison simulation results of FIG. [0026] FIG. 其中实线表示本发明的螺旋电感品质因数Q值随频率的变化曲线,虚线表示传统平面螺旋电感品质因数Q值随频率的变化曲线。 Wherein the solid line represents the quality factor Q value of the spiral inductor of the present invention versus frequency curve of broken line represents the conventional spiral inductor quality factor Q of the frequency change curve.

[0027] 图2所示,本发明的电感品质因数Q值在2.70GHz时达到最大值14.86,传统平面螺旋电感的电感品质因数Q值在2.55GHz时达到最大值13.37。 [0027] As shown in FIG. 2, the inductance value of the quality factor Q of the present invention reaches a maximum at 14.86 2.70GHz, the inductance value of the quality factor Q of the conventional planar spiral inductor reaches a maximum at 13.37 2.55GHz. 本发明Q值较传统螺旋电感Q值提高了11%。 Q value of the spiral inductor of the present invention than conventional Q value increased by 11%.

[0028] 图3所示为本发明的电感值与传统金属线宽间距固定的平面螺旋电感的电感值仿真结果比较图。 Inductance value of the conventional fixed pitch width metal planar spiral inductor inductance simulation results comparing the present invention shown in FIG. [0028] FIG. 其中实线表示本发明的螺旋电感电感值随频率的变化曲线,虚线表示传统平面螺旋电感电感值随频率的变化曲线。 Wherein the solid line represents the inductance of the inductor coil of the present invention versus frequency curve of broken line represents the conventional spiral inductor inductance value versus frequency curve. [0029] 图3所示,本发明的电感值在2GHz时电感值为7.3 InH,传统平面螺旋电感在2GHz时电感值为5.52nH。 As shown in [0029] FIG. 3, the inductance value of the present invention, when inductance value 2GHz 7.3 InH, conventional planar spiral inductor inductance value at 2GHz 5.52nH. 本发明电感值较传统电感的电感值提高了36%。 The present invention inductance than the inductance value of the inductance of the conventional improved 36%.

[0030] 从仿真结果可知,采用本发明线宽间距交变结构型平面螺旋电感能够有效的提高螺旋电感的性能。 [0030] apparent from the simulation results, using the line width of the spacing structure-type alternating planar spiral inductor of the present invention can effectively improve the performance of the spiral inductor.

Claims (4)

1.一种线宽间距交变结构型平面螺旋电感,包括硅衬底、绝缘层、平面螺旋电感底层金属层、通孔以及平面螺旋电感金属层;所述的硅衬底上生长有螺旋电感的绝缘层,绝缘层上镀金属薄膜刻蚀平面螺旋电感底层金属层,底层金属层上沉积绝缘层,底层金属层上的绝缘层刻蚀通孔,在底层金属层上的绝缘层上镀金属薄膜刻蚀平面螺旋电感金属层,通孔连接底层金属层和平面螺旋电感金属层,平面螺旋电感金属层中由金属导线构成线圈图案,线圈图案为多匝; 所述线宽间距交变结构型平面螺旋电感的特征在于,所述平面螺旋电感金属层的金属导线线宽自外圈向内圈宽窄交替变化,金属导线间距自外圈向内圈宽窄交替变化; 所述平面螺旋电感金属层的金属导线线宽自外圈向内圈宽窄交替变化是指,自外向内,第I圈金属导线的宽度是所有金属导线中宽 An alternating pitch width type planar spiral inductor structure, comprising a silicon substrate, an insulating layer, planar spiral inductor underlying metal layer, vias, and metal layer planar spiral inductor; spiral inductor grown on the silicon substrate insulating layer, the insulating layer on the metallized film is etched planar spiral inductor underlying metal layer, an insulating layer is deposited on the underlying metal layer, etching the insulating layer through hole on the underlying metal layer on the insulating layer over an underlying metal layer, plated metal etching the metal thin film layer spiral inductor, via connection layer and the underlying metal layer is a metal planar spiral inductor, planar spiral inductor metal layer made of a metal wire constituting the coil patterns, the coil patterns of a plurality of turns; the pitch width alternating structural characterized in that the spiral inductor, the planar spiral inductor wire width of the metal layer of the metal from the inner to the outer ring width changes alternately, a metal wire spacing from the outer to the inner ring of alternating width; the spiral inductor metal layer metallic conductor width from the inner to the outer ring width alternate means, from the inside outward, the width of the metal wire coil I is that all metal wires wide 最宽的;第2圈金属导线的宽度较第I圈金属导线的宽度变窄;第3圈金属导线的宽度较第2圈金属导线的宽度变宽,但窄于第I圈金属导线的宽度;第4圈金属导线的宽度较第3圈金属导线的宽度变窄,且也窄于第2圈金属导线的宽度; 所述平面螺旋电感金属层的金属导线间距自外圈向内圈宽窄交替变化是指,自外向内,第I圈金属导线与第2圈金属导线之间的间距是导线间距中最大的;第2圈金属导线与第3圈金属导线之间的间距小于第I圈金属导线与第2圈金属导线之间的间距;第3圈金属导线与第4圈金属导线之间的间距大于第2圈金属导线与第3圈金属导线之间的间距,小于第I圈金属导线与第2圈金属导线之间的间距。 Broadest; ring width of the second metal wires than the wires of the metal ring I is narrowed; width of the third ring than the width of the metal wire coil of metal wire 2 is widened, but narrower than the width of the metal wire coil I ; width of the metal wire coil 4 than the width of the metal wire coil 3 is narrowed, and also narrower than the width of the second metal wire turns; the planar metal layer is a metal spiral inductor conductor spacing from the outer circumference to the inner width alternately refers to a change, from the inside outward, the spacing between the first metal wire ring I and the second metal wire is a wire coil spacing maximum; lap spacing between the second and the third metal wire coil of metal wire is less than the metal ring I the spacing between the wire and the second metal wire ring; spacing between the third and the fourth metal wire coil turns greater than the spacing between the metal wires of the second ring and the third ring metal wire metal wire, metal wire coil is smaller than I, the spacing between the second metal wire coil.
2.根据权利要求1所述的线宽间距交变结构型平面螺旋电感,其特征在于,所述的金属导线宽度的范围值为0.03微米〜20微米。 The pitch of the width of an alternating type planar spiral inductor structure as claimed in claim, wherein said metallic conductor width of 0.03 m ~ 20 [mu] m range.
3.根据权利要求1所述的线宽间距交变结构型平面螺旋电感,其特征在于,所述的金属导线之间的间距值的范围为0.04微米〜10微米。 3. The width of the pitch of the alternating structure of claim 1, planar spiral inductor, wherein the range of values ​​of the spacing between the metal wires is 0.04 m ~ 10 [mu] m.
4.根据权利要求1所述的线宽间距交变结构型平面螺旋电感,其特征在于,所述平面螺旋电感外径即最外圈金属导线的外径的范围为0.1微米〜400微米。 The pitch of the width of an alternating type planar spiral inductor structure as claimed in claim, characterized in that the outer diameter of the planar spiral inductor i.e., an outer diameter ranging outermost metal wire 0.1 m ~ 400 m.
CN 201210001680 2012-01-04 2012-01-04 Planar spiral inductor with wide-narrow-alternatingly line width and space CN102522181B (en)

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