CN109361042B - Frequency divider - Google Patents
Frequency divider Download PDFInfo
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- CN109361042B CN109361042B CN201811367716.XA CN201811367716A CN109361042B CN 109361042 B CN109361042 B CN 109361042B CN 201811367716 A CN201811367716 A CN 201811367716A CN 109361042 B CN109361042 B CN 109361042B
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- frequency divider
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- 239000002184 metal Substances 0.000 claims abstract description 74
- 239000010410 layer Substances 0.000 claims description 98
- 239000002356 single layer Substances 0.000 claims description 47
- 230000001939 inductive effect Effects 0.000 claims description 14
- 238000003475 lamination Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 description 17
- 230000001808 coupling effect Effects 0.000 description 7
- 230000009286 beneficial effect Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000004891 communication Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000010329 laser etching Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/213—Frequency-selective devices, e.g. filters combining or separating two or more different frequencies
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- Coils Or Transformers For Communication (AREA)
Abstract
The invention discloses a frequency divider, which comprises a laminated structure, wherein the laminated structure comprises an insulating layer and a metal layer which are arranged at intervals along the laminated direction, and the laminated structure forms at least one first inductance element and at least one capacitance element; the at least two metal layers are provided with first patterned metal structures which are correspondingly and electrically connected to form a first multi-layer planar spiral coil structure, and the first multi-layer planar spiral coil structure forms a first inductance element. By the technical scheme, the miniaturization of the first inductance element and the frequency divider is facilitated, the size of the first inductance element is precisely controlled, the accuracy of the inductance value of the first inductance element is improved, the conductivity of the first inductance element is improved, the resistance value of the first inductance element is reduced, the Q value of the first inductance element in the frequency divider is improved, and the loss of the frequency divider is reduced.
Description
Technical Field
The embodiment of the invention relates to the technical field of microwave communication electronic devices, in particular to a frequency divider.
Background
The frequency divider is an important component of the antenna and the communication electronic equipment, plays a role in determining the performance of the system, and generally sorts the received signals into corresponding channels according to frequency, namely the working principle of the frequency divider is to divide the input broadband signals into signals with different required frequency bands for outputting, so that the purposes of receiving the signals and suppressing interference are achieved.
In addition, as the miniaturization requirement of users on electronic products increases, the integration level of electronic products increases gradually, which puts higher demands on the size of electronic components contained in the electronic products, and how to miniaturize the electronic components and the electrical performance of the electronic components themselves is a problem to be solved. The size and electrical properties of the inductance element as a determining factor for determining the loss of the frequency divider directly affect the size and performance of the frequency divider, which makes it important how to miniaturize the inductance element and to provide the inductance element with its own electrical properties.
Disclosure of Invention
In view of the above, the present invention provides a frequency divider, which is advantageous for realizing miniaturization of a first inductance element and further miniaturization of the frequency divider, and simultaneously, for precisely controlling the size of the first inductance element, improving the accuracy of the inductance value of the first inductance element, improving the conductivity of the first inductance element, reducing the resistance value of the first inductance element, improving the Q value of the first inductance element in the frequency divider, and reducing the loss of the frequency divider.
The embodiment of the invention provides a frequency divider, which comprises:
a laminated structure including an insulating layer and a metal layer arranged at intervals in a lamination direction, the laminated structure forming at least one first inductance element and at least one capacitance element;
the first patterned metal structures are arranged in the at least two metal layers and are correspondingly and electrically connected to form a first multi-layer planar spiral coil structure, and the first multi-layer planar spiral coil structure forms the first inductance element.
Further, along the axial direction of the first multi-layer planar spiral coil structure, the first multi-layer planar spiral coil structure comprises a plurality of first single-layer planar spiral coil structures, and the thickness of a first dielectric structure between two adjacent first single-layer planar spiral coil structures is greater than that of the first single-layer planar spiral coil structures.
Further, the laminated structure forms at least one second inductive element;
a second patterned metal structure is arranged in at least two metal layers, the second patterned metal structures are correspondingly and electrically connected to form a second spiral coil structure, and the second spiral coil structure forms the second inductance element;
the axial direction of the first multilayer planar helical coil structure intersects the axial direction of the second helical coil structure.
Further, the axial direction of the first multilayer plane spiral coil structure and the axial direction of the second spiral coil structure are perpendicular to each other.
Further, the first inductive element is arranged in a first branch of the frequency divider and the second inductive element is arranged in a second branch of the frequency divider.
Further, the second helical coil structure is a multi-layer helical coil structure.
Further, along the axial direction of the second helical coil structure, the second helical coil structure comprises a plurality of second single-layer planar helical coil structures, and the thickness of the second dielectric structure between two adjacent second single-layer planar helical coil structures is greater than that of the second single-layer planar helical coil structures.
Further, the laminated structure forms at least one third inductance element, and a third patterned metal structure in one of the metal layers forms a third single-layer planar spiral coil structure, which constitutes the third inductance element.
Further, in the direction perpendicular to the plane where the laminated structure is located, overlapped parts of fourth patterned metal structures in two adjacent metal layers form the capacitive element.
Further, the first multi-layer planar spiral coil structure includes a plurality of first single-layer planar spiral coil structures along an axial direction of the first multi-layer planar spiral coil structure, the first single-layer planar spiral coil structure forming at least one turn of coil structure.
The embodiment of the invention provides a frequency divider, which comprises a laminated structure, wherein the laminated structure comprises an insulating layer and a metal layer which are arranged at intervals along the laminated direction, and the laminated structure forms at least one first inductance element and at least one first capacitance element. The at least two metal layers are provided with first patterned metal structures, the first patterned metal structures are correspondingly and electrically connected to form a first multi-layer planar spiral coil structure, and the first multi-layer planar spiral coil structure forms a first inductance element. In this way, the insulating layers and the metal layers which are arranged at intervals along the stacking direction in the stacking structure are utilized to form the first multilayer planar spiral coil structure, namely at least one first inductance element in the frequency divider is formed, the first inductance element in the frequency divider can be manufactured by adopting a semiconductor process while the miniaturization of the first inductance element is facilitated to be realized, the precise control of the size of the first inductance element is facilitated, the accuracy of the inductance value of the first inductance element is improved, the conductivity of the first inductance element is also facilitated to be improved, the resistance value of the first inductance element is reduced, the Q value of the first inductance element in the frequency divider is improved, and the loss of the frequency divider is reduced.
Drawings
Other features, objects and advantages of the present application will become more apparent upon reading of the detailed description of non-limiting embodiments, made with reference to the following drawings, in which:
fig. 1 is a schematic perspective view of a first inductance element in a frequency divider according to an embodiment of the present invention;
fig. 2 is a schematic perspective view of a second inductance element in a frequency divider according to an embodiment of the present invention;
fig. 3 is a schematic perspective view of a second inductance element in another frequency divider according to an embodiment of the present invention;
fig. 4 is a schematic perspective view of a third inductance element in a frequency divider according to an embodiment of the present invention;
fig. 5 is a schematic perspective view of a third inductance element in another frequency divider according to an embodiment of the present invention.
Detailed Description
The invention is described in further detail below with reference to the drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting thereof. It should be further noted that, for convenience of description, only some, but not all of the structures related to the present invention are shown in the drawings. Throughout this specification, the same or similar reference numerals indicate the same or similar structures, elements or processes. It should be noted that, in the case of no conflict, the embodiments and features in the embodiments may be combined with each other.
The embodiment of the invention provides a frequency divider, which comprises a laminated structure, wherein the laminated structure comprises an insulating layer and a metal layer which are arranged at intervals along the laminated direction, and the laminated structure forms at least one first inductance element and at least one capacitance element. The at least two metal layers are provided with first patterned metal structures which are correspondingly and electrically connected to form a first multi-layer planar spiral coil structure, and the first multi-layer planar spiral coil structure forms a first inductance element.
The frequency divider is an important component of the antenna and the communication electronic equipment, plays a role in determining the performance of the system, and generally sorts the received signals into corresponding channels according to frequency, namely the working principle of the frequency divider is to divide the input broadband signals into signals with different required frequency bands for outputting, so that the purposes of receiving the signals and suppressing interference are achieved. In addition, as the miniaturization requirement of users on electronic products increases, the integration level of electronic products increases gradually, which puts higher demands on the size of electronic components contained in the electronic products, and how to miniaturize the electronic components and the electrical performance of the electronic components themselves is a problem to be solved. The size and electrical properties of the inductance element as a determining factor for determining the loss of the frequency divider directly affect the size and performance of the frequency divider, which makes it important how to miniaturize the inductance element and to provide the inductance element with its own electrical properties.
The frequency divider provided by the embodiment of the invention comprises a laminated structure, wherein the laminated structure comprises an insulating layer and a metal layer which are arranged at intervals along the laminated direction, and the laminated structure forms at least one first inductance element and at least one first capacitance element. The at least two metal layers are provided with first patterned metal structures, the first patterned metal structures are correspondingly and electrically connected to form a first multi-layer planar spiral coil structure, and the first multi-layer planar spiral coil structure forms a first inductance element. In this way, the insulating layers and the metal layers which are arranged at intervals along the stacking direction in the stacking structure are utilized to form the first multilayer planar spiral coil structure, namely at least one first inductance element in the frequency divider is formed, the first inductance element in the frequency divider can be manufactured by adopting a semiconductor process while the miniaturization of the first inductance element is facilitated to be realized, the precise control of the size of the first inductance element is facilitated, the accuracy of the inductance value of the first inductance element is improved, the conductivity of the first inductance element is also facilitated to be improved, the resistance value of the first inductance element is reduced, the Q value of the first inductance element in the frequency divider is improved, and the loss of the frequency divider is reduced.
The foregoing is the core idea of the present invention, and the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without making any inventive effort are intended to fall within the scope of the present invention.
Fig. 1 is a schematic perspective view of a first inductance element in a frequency divider according to an embodiment of the present invention. As shown in fig. 1, the frequency divider includes a laminated structure including an insulating layer 1 and a metal layer 2 disposed at intervals in a lamination direction XX', the laminated structure forming at least one first inductance element 31 and at least one capacitance element, and fig. 1 shows only one first inductance element 31 formed by the laminated structure by way of example. At least two metal layers 2 are provided with a first patterned metal structure 21, fig. 1 exemplarily shows the first patterned metal structure 21 in the two metal layers 2, and the first patterned metal structure 21 is correspondingly and electrically connected to form a first multi-layer planar spiral coil structure 41, where the first multi-layer planar spiral coil structure 41 forms the first inductance element 31.
As shown in fig. 1, the laminated structure includes metal layers 2 and insulating layers 1 sequentially arranged in a lamination direction XX', the insulating layers 1 are used for realizing electrical insulation of portions of the first patterned metal structures 21 in adjacent metal layers 2 without electrical connection, through-hole structures 11 are provided in the insulating layers 1 between the two metal layers 2 provided with the first patterned metal structures 21, and the first patterned metal structures 21 in the upper and lower metal layers 2 of the insulating layers 1 are electrically connected through the through-hole structures 11. Illustratively, the first patterned metal structure 21 may be formed by an electroplating process, a sputtering process, or a process of depositing a metal layer 2 and then etching, etc., preferably, the first patterned metal structure 21 is formed by an electroplating process, which can form a metal film layer with a larger thickness, so as to be beneficial to improving the Q value of the first inductance element 31. In addition, the material constituting the insulating layer 1 may be PI, i.e., polyimide, and a layer of the insulating layer 1 may be deposited first, and then the via structure 11 may be formed at a set position of the insulating layer 1 through a dry etching process or a laser etching process.
The inductance element commonly adopted in the current frequency divider is an MLCC (Muiti-layer Ceramic Capacitiors, chip type multilayer ceramic capacitor), which is made of ceramic materials, has lower conductivity and rough manufacturing process, so that the Q value of the inductance element is lower, the size of the inductance element cannot be accurately controlled, the accuracy of the inductance element is lower, the performance of the frequency divider is affected, and miniaturization of the inductance element and miniaturization of the frequency divider are difficult to realize. According to the frequency divider provided by the embodiment of the invention, the insulating layers 1 and the metal layers 2 which are arranged at intervals along the stacking direction XX' in the stacking structure are utilized to form the first multi-layer planar spiral coil structure 41, namely at least one first inductance element 31 in the frequency divider is formed, the larger inductance value is obtained in a smaller size, namely the miniaturization of the first inductance element 31 is facilitated, the miniaturization of the frequency divider is further realized, meanwhile, the first inductance element 31 in the frequency divider can be manufactured by adopting a semiconductor process, the accurate control of the size of the first inductance element 31 is facilitated, the inductance value precision of the first inductance element 31 is improved, the performance of the frequency divider is improved, the conductivity of the first inductance element 31 is improved, the resistance value of the first inductance element 31 is reduced, the Q value of the first inductance element 31 in the frequency divider is improved, and the loss of the frequency divider is reduced.
Optionally, along the axial direction of the first multi-layer planar spiral coil structure, the first multi-layer planar spiral coil structure includes a plurality of first single-layer planar spiral coil structures, and a thickness of the first dielectric structure between two adjacent first single-layer planar spiral coil structures may be set to be greater than a thickness of the first single-layer planar spiral coil structure. Specifically, as shown in fig. 1, along the axial direction XX 'of the first multi-layer planar spiral coil structure 41, the thickness of the first dielectric structure is the thickness of the insulating layer 1, in fig. 1, the height of the through hole structure 11 is the thickness of the first dielectric structure between two adjacent first single-layer planar spiral coil structures 401 is greater than the thickness of the first single-layer planar spiral coil structure 401, the thickness of the first single-layer planar spiral coil structure is equal to the thickness of the first dielectric structure relative to the thickness of the inductance element with the same thickness, the distance between the adjacent first single-layer planar spiral coil structures 401 is increased, the problem that the coupling effect between the adjacent first single-layer planar spiral coil structures 401 is too strong along the axial direction XX' of the first multi-layer planar spiral coil structure 41 due to the too small distance between the adjacent first single-layer planar spiral coil structures 401, and the resonance frequency of the first inductance element 31 is affected is improved. For example, the material constituting the first dielectric structure may be PI, i.e., polyimide, i.e., the material constituting the insulating layer 1 is PI.
As shown in fig. 1, along the axial direction XX' of the first multi-layer planar spiral coil structure 41, the first multi-layer planar spiral coil structure 41 includes a plurality of first single-layer planar spiral coil structures 401, and the first single-layer planar spiral coil structures 401 may be formed into a single-layer planar spiral coil structure, or the first single-layer planar spiral coil structures 401 may be provided to form a multi-layer planar spiral coil structure, so that the first inductance element 31 with a larger inductance value can be obtained in the same size, which is also beneficial to the miniaturization of the first inductance element 31, and further the miniaturization of the frequency divider.
Fig. 2 is a schematic perspective view of a second inductance element in a frequency divider according to an embodiment of the present invention. As shown in fig. 2, on the basis of the first inductance element in the frequency divider with the structure shown in fig. 1, at least one second inductance element 32 may be formed by providing a laminated structure, at least two metal layers 2 are provided with second patterned metal structures 22, fig. 2 exemplarily provides two metal layers 2 with second patterned metal structures 22, the second patterned metal structures 22 are correspondingly and electrically connected to form a second spiral coil structure 42, and the second spiral coil structure 42 is the second inductance element 32. Similarly, the second patterned metal structure 22 may be formed by using a plating process, a sputtering process, or a process of depositing a metal layer 2 and then etching, or the like, and the insulating layer 1 may be deposited first, and then the via structure 11 may be formed at a set position of the insulating layer 1 by using a dry etching process or a laser etching process.
Referring to fig. 1 and 2, it may be provided that an axial direction XX 'of the first multi-layered planar helical coil structure 41 intersects an axial direction YY' of the second helical coil structure 42. Specifically, if the axial directions of the two inductance elements are parallel, the coupling effect between the two inductance elements is obvious, which can seriously affect the out-of-band rejection characteristic of the frequency divider, and the axial direction of the first multilayer planar spiral coil structure 41 is intersected with the axial direction of the second spiral coil structure 42, so that the coupling effect between the first multilayer planar spiral coil structure 41 and the second spiral coil structure 42 is effectively reduced, the accuracy of the inductance values of the first inductance element 31 and the second inductance element 32 is improved to improve the performance of the frequency divider, the Q values of the first inductance element 31 and the second inductance element 32 in the frequency divider are improved to reduce the loss of the frequency divider, and the out-of-band rejection characteristic of the frequency divider is optimized. Preferably, the axial direction XX 'of the first multilayer planar helical coil structure 41 and the axial direction YY' of the second helical coil structure 42 may be arranged to be perpendicular to each other so as to minimize the coupling effect between the first inductive element 31 and the second inductive element 32, further optimizing the out-of-band rejection characteristics of the frequency divider.
Alternatively, in combination with fig. 1 and 2, the first inductive element 31 may be arranged in a first branch of the frequency divider and the second inductive element 32 may be arranged in a second branch of the frequency divider. By arranging the first inductance element 31 and the second inductance element 32 in different branches, the coupling effect between the first multilayer planar spiral coil structure 41 and the second planar spiral coil structure is effectively reduced by arranging the axial XX 'of the first multilayer planar spiral coil structure 41 and the axial YY' of the second spiral coil structure 42 to avoid the mutual influence between different branches in the frequency divider, the frequency divider cannot accurately process the signal to be processed, and the out-of-band rejection characteristic of the frequency divider is optimized.
Optionally, as shown in fig. 2, the second spiral coil structure 42 may be configured as a multi-layer spiral coil structure, which is beneficial to improving the accuracy of inductance values of the first inductance element and the second inductance element to improve the performance of the frequency divider, improving the Q values of the first inductance element and the second inductance element in the frequency divider to reduce the loss of the frequency divider, optimizing the out-of-band suppression characteristic of the frequency divider, and simultaneously, being beneficial to obtaining the first inductance element and the second inductance element with larger inductance values in a smaller size, that is, being beneficial to realizing miniaturization of the first inductance element and the second inductance element, further reducing the size of the frequency divider, and realizing miniaturization of the frequency divider.
Fig. 3 is a schematic perspective view of a second inductance element in another frequency divider according to an embodiment of the present invention. Alternatively, as shown in fig. 3, along the axial direction ZZ' of the second helical coil structure 42, the second helical coil structure 42 includes a plurality of second single-layer planar helical coil structures 402, where the thickness of the second dielectric structure between two adjacent second single-layer planar helical coil structures 402 may be greater than the thickness of the second single-layer planar helical coil structures 402, and the thickness of the second dielectric structure between two adjacent second single-layer planar helical coil structures 402 is the distance d between two vertical second single-layer planar helical coil structures 402. Similarly, the thickness of the second dielectric structure between two adjacent second single-layer planar spiral coil structures 402 is greater than the thickness of the second single-layer planar spiral coil structures 402, and the thickness of the second single-layer planar spiral coil structures is equal to the thickness of the second dielectric structure relative to the inductance element with the same thickness, so that the distance between the adjacent second single-layer planar spiral coil structures 402 is increased, the problem that the coupling effect between the adjacent second single-layer planar spiral coil structures 402 is too strong along the axial direction ZZ' of the second spiral coil structures 42 due to too small distance between the adjacent second single-layer planar spiral coil structures 402, and the resonance frequency of the second inductance element 32 is affected is improved, and the resonance frequency of the second inductance element 32 is improved.
It should be noted that, fig. 2 and fig. 3 are exemplary two second inductance elements, and the specific shape and winding manner of the second inductance elements are not limited in the embodiment of the present invention, so long as the axial direction XX 'of the first multilayer planar spiral coil structure 41 intersects with the axial direction YY' of the second spiral coil structure 42.
Fig. 4 is a schematic perspective view of a third inductance element in a frequency divider according to an embodiment of the present invention. As shown in fig. 4, the laminated structure may further form at least one third inductance element 33, where the third patterned metal structure 23 located in the one metal layer 2 forms a third single-layer planar spiral coil structure 43, and the third single-layer planar spiral coil structure 43 is the third inductance element 33. Specifically, the third inductance element 33 formed by the single-layer planar spiral coil structure can achieve a smaller inductance value than the inductance element formed by the structures shown in fig. 1 to 3, and the arrangement of the third inductance element 33 can meet the requirements of the frequency divider for inductances with different inductance values. It should be noted that, in the embodiment of the present invention, the specific shape of the third single-layer planar spiral coil structure 43 is not limited, and as shown in fig. 4 or fig. 5, the bent inner angle of the metal trace forming the coil structure may be set to be 135 ° in consideration of the semiconductor manufacturing process. In addition, referring to fig. 3 to 5, the axial direction VV 'of the third single-layer planar spiral coil structure 43 may also intersect, and preferably are perpendicular to, the axial direction ZZ' of the second spiral coil structure 42, so as to reduce the coupling effect between the third inductance element 33 and the second inductance element 32, and further optimize the out-of-band rejection characteristics of the frequency divider.
Optionally, in a direction perpendicular to a plane where the laminated structure is located, the overlapped portion of the fourth patterned metal structures in the two adjacent metal layers forms a capacitive element, and the insulating layer located between the two fourth patterned metal structures serves as a dielectric layer of the capacitive structure, so that the stacked structure provided with the metal layers and the insulating layer is used to form the inductive element and the capacitive element at the same time, and a corresponding relationship between the inductive element and the corresponding capacitive element can be achieved through the via hole in the corresponding insulating layer. Illustratively, the high-pass branch of the frequency divider may be provided with a first inductance element 31 of the structure shown in fig. 1 and a third inductance element 33 of the structure shown in fig. 5, and the low-pass branch may be provided with a second inductance element 32 of the structure shown in fig. 2 or 3 and a third inductance element 33 of the structure shown in fig. 4, each of which is electrically connected to a corresponding capacitance element.
It should be noted that, in the embodiment of the present invention, the specific number of the inductance elements and the capacitance elements and the specific connection relationship between the inductance elements and the capacitance elements in the frequency divider are not limited, and those skilled in the art may set the number of the inductance elements and the capacitance elements and the connection relationship between them according to the needs.
The frequency divider provided by the embodiment of the invention comprises a laminated structure, wherein the laminated structure comprises an insulating layer 1 and a metal layer 2 which are arranged at intervals along the laminated direction XX', and the laminated structure forms at least one first inductance element 31 and at least one first capacitance element. The at least two metal layers 2 are provided with first patterned metal structures 21, and the first patterned metal structures are correspondingly and electrically connected to form a first multi-layer planar spiral coil structure 41, wherein the first multi-layer planar spiral coil structure 41 forms the first inductance element 31. In this way, the insulating layers 1 and the metal layers 2 which are arranged at intervals along the stacking direction XX' in the stacking structure are utilized to form the first multilayer planar spiral coil structure 41, namely, at least one first inductance element 31 in the frequency divider is formed, and the first inductance element 31 in the frequency divider can be manufactured by adopting a semiconductor process while a larger inductance value is obtained in a smaller size, namely, the miniaturization of the first inductance element 31 is facilitated, thereby realizing the miniaturization of the frequency divider, the precise control of the size of the first inductance element 31 is facilitated, the accuracy of the inductance value of the first inductance element 31 is improved, the conductivity of the first inductance element 31 is also facilitated, the resistance value of the first inductance element 31 is reduced, the Q value of the first inductance element 31 in the frequency divider is improved, and the loss of the frequency divider is reduced.
Note that the above is only a preferred embodiment of the present invention and the technical principle applied. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, while the invention has been described in connection with the above embodiments, the invention is not limited to the embodiments, but may be embodied in many other equivalent forms without departing from the spirit or scope of the invention, which is set forth in the following claims.
Claims (9)
1. A frequency divider, comprising:
a laminated structure including an insulating layer and a metal layer arranged at intervals in a lamination direction, the laminated structure forming at least one first inductance element and at least one capacitance element;
a first patterned metal structure is arranged in at least two metal layers, the first patterned metal structures are correspondingly and electrically connected to form a first multi-layer planar spiral coil structure, and the first multi-layer planar spiral coil structure forms the first inductance element; the laminated structure forms at least one second inductive element;
a second patterned metal structure is arranged in at least two metal layers, the second patterned metal structures are correspondingly and electrically connected to form a second spiral coil structure, and the second spiral coil structure forms the second inductance element;
the axial direction of the first multilayer planar helical coil structure intersects the axial direction of the second helical coil structure.
2. The frequency divider of claim 1, wherein the first multi-layer planar spiral coil structure comprises a plurality of first single-layer planar spiral coil structures along an axial direction of the first multi-layer planar spiral coil structure, and a thickness of a first dielectric structure between adjacent two of the first single-layer planar spiral coil structures is greater than a thickness of the first single-layer planar spiral coil structure.
3. The frequency divider of claim 1, wherein an axial direction of the first multi-layered planar helical coil structure is perpendicular to an axial direction of the second helical coil structure.
4. The frequency divider of claim 1, wherein the first inductive element is disposed in a first leg of the frequency divider and the second inductive element is disposed in a second leg of the frequency divider.
5. The frequency divider of claim 1, wherein the second helical coil structure is a multi-layer helical coil structure.
6. The frequency divider of claim 5, wherein the second helical coil structure comprises a plurality of second single-layer planar helical coil structures along an axial direction of the second helical coil structure, and wherein a thickness of a second dielectric structure between adjacent two of the second single-layer planar helical coil structures is greater than a thickness of the second single-layer planar helical coil structure.
7. The frequency divider of claim 1, wherein the stacked structure forms at least one third inductive element, and a third patterned metal structure in one of the metal layers forms a third single-layer planar spiral coil structure that constitutes the third inductive element.
8. The frequency divider of claim 1, wherein overlapping portions of fourth patterned metal structures in two adjacent metal layers form the capacitive element in a direction perpendicular to a plane in which the stacked structures lie.
9. The frequency divider of claim 1, wherein the first multi-layer planar spiral coil structure comprises a plurality of first single-layer planar spiral coil structures along an axial direction of the first multi-layer planar spiral coil structure, the first single-layer planar spiral coil structure forming at least one turn of coil structure.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811367716.XA CN109361042B (en) | 2018-11-16 | 2018-11-16 | Frequency divider |
| US16/764,279 US11190160B2 (en) | 2018-11-16 | 2019-03-08 | Frequency multiplexer |
| JP2020525902A JP2021508167A (en) | 2018-11-16 | 2019-03-08 | Multiplexer |
| PCT/CN2019/077494 WO2020098185A1 (en) | 2018-11-16 | 2019-03-08 | Frequency divider |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811367716.XA CN109361042B (en) | 2018-11-16 | 2018-11-16 | Frequency divider |
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| CN109361042A CN109361042A (en) | 2019-02-19 |
| CN109361042B true CN109361042B (en) | 2024-03-19 |
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| CN201811367716.XA Active CN109361042B (en) | 2018-11-16 | 2018-11-16 | Frequency divider |
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| JP2021508167A (en) * | 2018-11-16 | 2021-02-25 | 安徽安努奇科技有限公司Ａｎｈｕｉ Ａｎｕｋｉ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｃｏ．， Ｌｔｄ． | Multiplexer |
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| CN109361042A (en) | 2019-02-19 |
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