CN108369852A - Pinboard with integrated magnetic device - Google Patents
Pinboard with integrated magnetic device Download PDFInfo
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- CN108369852A CN108369852A CN201680058602.XA CN201680058602A CN108369852A CN 108369852 A CN108369852 A CN 108369852A CN 201680058602 A CN201680058602 A CN 201680058602A CN 108369852 A CN108369852 A CN 108369852A
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 206
- 239000002184 metal Substances 0.000 claims abstract description 206
- 239000000758 substrate Substances 0.000 claims abstract description 65
- 230000008878 coupling Effects 0.000 claims description 5
- 238000010168 coupling process Methods 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 238000003780 insertion Methods 0.000 claims description 3
- 230000037431 insertion Effects 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 29
- 229910052710 silicon Inorganic materials 0.000 abstract description 29
- 239000010703 silicon Substances 0.000 abstract description 29
- 230000001771 impaired effect Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 23
- 230000000052 comparative effect Effects 0.000 description 20
- 238000010586 diagram Methods 0.000 description 14
- 238000009413 insulation Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 7
- 238000004088 simulation Methods 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 238000004364 calculation method Methods 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000035699 permeability Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 239000011572 manganese Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000000992 sputter etching Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Coils Or Transformers For Communication (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
A kind of pinboard (300 with integrated magnetic device,400,500,600,700,800,900,1000,1100,1200),In substrate (301,401,501,601,701,801) it is equipped with magnetic device,The coil of magnetic device is by metal wire (311,321,411,421,511,521,611,621,711,721,811,821,911,921,940,950,1011,1021,1040,1050) it connects and composes,The metal wire (311,321,411,421,511,521,611,621,711,721,811,821,911,921,940,950,1011,1021,1040,1050) it is arranged in substrate (301,401,501,601,701,801) in.Significantly reduce the resistance of magnetic device, improve the inductance density and quality factor for integrating magnetic device, reduce the volume of magnetic device, improve efficiency, and it does not influence the flatness of switching plate surface, be not take up existing metal interconnection wire, under the premise of ensureing that silicon pinboard interconnecting function itself is not impaired, improves the performance for integrating magnetic device and realize the integrated of high performance magnetic device.
Description
Pinboard technical field with integrated magnetic device
[0001] the present invention relates to a kind of integrated circuit, especially a kind of integrated magnetic devices.
Background technique
[0002] with the development of manufacturing method for integrated curcuit, the number of transistors for including on unit chip area and the function that may be implemented are quicklyd increase.Correspondingly, requirement of the integrated circuit for power source performance increases accordingly.Same inch, portable, wearable, implantable electronic equipment development, also proposes tightened up requirement to the volume of power supply.Improvement of the powered-down source traditional Jian (switched-mode power supply) due to needing to significantly limit power source performance using discrete magnetic device, such as discrete inductance and to the powered-down volume source of Jian.
[0003] firstly, being unfavorable for realizing fine granularity power management (fine granular power management) using discrete magnetic device.Complicated integrated circuit (system), such as central processor CPU, digital signal processor DSP and graphics processor GPU, generally comprise several independent voltage regions (voltage domain).Under different operating conditions, the operating voltage of each voltage regime can be adjusted with inch, thus the total power consumption of optimization system.This dynamic voltage regulation method requires to be equipped with a powered-down source exclusive Jian to each voltage regime.Since the powered-down source each Jian at least needs a magnetic device, such as inductance, lead to volume and cost that system can be dramatically increased using discrete magnetic device.
[0004] second, it is unfavorable for the fast transient response of power supply using discrete magnetic device.When the inch of load current or voltage jump is waited, the current or voltage that power supply provides can should closely follow load to change.Discrete magnetic device, such as discrete inductance usually on a printed circuit, then via the line on plate are connected to load by the installation of surface mount method.The line of this part can introduce parasitic inductance, to limit the speed of curent change, reduce the transient response performance of power supply.
[0005] third, discrete magnetic device are unfavorable for the miniaturization of system.Large number of discrete magnetic device not only occupies the area of circuit board, and the thickness of system is also increased with inch.The thickness of discrete magnetic device itself is usually even several millimeters of hundreds of microns, and the thickness of printed circuit board is then in millimeter level.Therefore, for using the powered-down source Jian of discrete magnetic device, the area and thickness of further reduction system are extremely difficult.
[0006] prior art carries out the integrated technical solution of inductance using silicon pinboard (silicon interposer).By inductance
It is integrated on silicon pinboard, so that the connection of inductance and circuit chip is more easier and conveniently, partially solves the problems, such as system compact.But since silicon pinboard front metal interconnection line thickness is small, density is big, use these metal wires that can significantly limit the performance of inductance especially power inductance as the coil of integrated inductor.Therefore, prior art cannot provide high performance integrated power inductance on silicon pinboard.
[0007] the silicon pinboard of the prior art and the structure of inductance integrated system are as shown in Figure 1, system 100 includes silicon pinboard 10 1,101 front is the (front metal layer of double layer of metal interconnection line 111 and 112, metal interconnection wire can be one layer or more in actual use), the convex block (bump) 121 (such as copper pillar bumps) by connecting metal interconnection wire connects positive chip.Chip 131 and chip 132 are usually to be welded on silicon pinboard with flip-chip.Chip 1 31 has a large amount of port to need to be electrically connected via metal layer 111 and 112 with the realization of chip 132 by convex block 121, so metal layer 111 and metal layer 112 have very high wiring density, spacing between usual metal wire only has several microns, such as 2 microns, line width also very little, such as 0.5 micron.Wiring density and width limit the thickness of metal layer 111 and 112, such as 0.5 micron.
[0008] positive metal interconnection wire 111 and 112 is connected to the metal redistribution layer (metal layer on back) 141 at the back side by the through silicon via (TSV) 102 on silicon pinboard 101.Metal layer on back 141 is connected to other device (not shown) with the metal wire 152 on substrate 151 (such as printing board PCB) by solder sphere 142 (such as control collapsed chip interconnects C4).Requirement due to usually only one layer of back metal line and for surface planarisation is lower than front metal interconnection line, the line width and thickness requirement of metal redistribution layer 141 are all looser than positive metal interconnection wire 111 and 112, its line width can reach tens microns, and thickness can achieve several microns.
[0009] prior art utilizes front metal layer 111,112, metal layer on back 141 and through silicon via 102 form inductance, usually there are two types of structures, a kind of structure is as shown in Fig. 2-1, inductance 200 on silicon pinboard forms spiral 201 by front metal interconnection layer 111,112, spiral 203 is formed by metal layer on back 141, a two-sided spiral inductance of multilayer is formed by through silicon via 202.For another structure as shown in Fig. 2-2, the inductance 210 on silicon pinboard forms metal wire 211 by front metal interconnection layer 111,112, forms metal wire 213 by metal layer on back 141, then form a scroll inductance by through silicon via 212.
[0010] deficiency of the induction structure constituted using front metal layer 111,112, it shows both ways: one, the thickness of front metal layer is too small and cannot dramatically increase, and otherwise just will increase that metal wire is wide, line spacing, so as to cause interconnection density reduction.So using front metal line that can dramatically increase the resistance of inductance as a part of inductance coil, increase inductance power consumption, reduces inductance efficiency.Second, the cabling of inductance can consume the one of region
Layer or more front metal line.The reduction of the metal wire number of plies will limit the flexibility of regional metal line layout and interconnection, to reduce the interconnection capability of silicon pinboard.
[0011] in 1 US 8,072,042 (CN 102479685B) of documents, the electricity interconnection of two conductive through holes of the plain conductor and connection plain conductor of front and back sides is located at substrate surface, the entire substrate of magnetic core break-through.
[0012] in 2 US 20130335059 of documents, in 3 US 2013/0020675 of documents, the plain conductor of inductance is formed in the metal stack in dielectric layer, the metal redistribution layer composition of through silicon via and silicon chip back side by silicon substrate front.
[0013] in 4 US 8 of documents, 143, in 952 (CN 102576657), the first part's metal for forming inductance coil uses the first layer metal that substrate surface is formed in after the process (back-end-of-line, BEOL).
[0014] it can be seen that according to above-mentioned, inductance is integrated on silicon pinboard by the prior art, not only the performance of inductance had been had lost, but also has reduced the function of silicon pinboard, the integrated magnetic device with high inductance density and quality factor can not be integrated in silicon pinboard.
Technical problem
[0015] the object of the present invention is to provide a kind of pinboard with integrated magnetic device, technical problems to be solved are to improve the performance of integrated magnetic device.
Solution to the problem
Technical solution
[0016] the invention adopts the following technical scheme: a kind of pinboard with integrated magnetic device, is equipped with magnetic device on substrate, the coil of magnetic device is connected and composed by metal wire, and the metal wire is arranged in substrate.
[0017] metal wire of the invention is the first metal wire and the second metal wire, and the first metal wire and the second metal wire are electrically connected to form coil by the second through-hole for being wherein filled with metal.
[0018] coil of the invention is scroll.
[0019] the first metal wire of the invention is arranged in substrate.
[0020] the first metal wire of the invention insertion is arranged in the first surface in face on substrate.
[0021] the second metal wire of the invention is arranged outside second surface.
[0022] first through hole for being wherein filled with metal of the second metal wire of electrical connection and first surface is equipped in the substrate of the invention.
[0023] the first metal wire of the invention, the second metal wire and the second through-hole composition coil group for being wherein filled with metal, magnetic couplings between one group of coil and another group of coil；Between one group of coil and the first metal wire and the second metal wire of another group of coil close to or interval the first metal wire of single and the second metal wire.
[0024] magnetic core of plane is provided with outside substrate of the invention, between second surface and the second metal wire, the magnetic circuit of the magnetic core is closed or has gap.
[0025] Embedded magnetic core is equipped in second surface of the invention, embedded magnetic core extends into substrate interior from second surface, and the magnetic circuit of the magnetic core is closed or has gap.
Advantageous effect of the invention
Beneficial effect
[0026] present invention compared with prior art, a part of metal wire of magnetic device is embedded in substrate, significantly reduce the resistance of magnetic device, improve the inductance density and quality factor of integrated magnetic device, reduce the volume of magnetic device, improve efficiency, and it does not influence the flatness of switching plate surface, be not take up existing metal interconnection wire, under the premise of guaranteeing that silicon pinboard interconnecting function itself is not impaired, pairs of the brief description of accompanying drawing of collection of high performance magnetic device is realized
Detailed description of the invention
[0027] Fig. 1 is the silicon adapter plate structure schematic diagram of the prior art.
[0028] Fig. 2-1 is the integrated inductance structure schematic diagram (one) of the prior art.
[0029] Fig. 2-2 is the integrated inductance structure schematic diagram (two) of the prior art.
[0030] Fig. 3 is the structural schematic diagram of the embodiment of the present invention 1.
[0031] Fig. 4 is the A-A cross-sectional view of Fig. 3.
[0032] Fig. 5 is the structural schematic diagram of the embodiment of the present invention 2.
[0033] Fig. 6 is the B-B cross-sectional view of Fig. 5.
[0034] Fig. 7 is the structural schematic diagram of the embodiment of the present invention 3.
[0035] Fig. 8 is the C-C cross-sectional view of Fig. 7.
[0036] Fig. 9 is the top view of the embodiment of the present invention 4.
[0037] Figure 10 is the top view of the embodiment of the present invention 5.
[0038] Figure 11 is the top view of the embodiment of the present invention 6.
[0039] Figure 12 is the top view of the embodiment of the present invention 7.
Implement the most preferred embodiment of the invention
Preferred forms of the invention
[0040] comparative example 1 is spiral inductor, pinboard with a thickness of Ι Ο Ο μ η ι, substrate uses resistivity for the High Resistivity Si of 1000 Ω-cm, first metal wire uses copper, it is obtained with the deposition of the prior art and graphic method, first metal wire is located on first surface, with a thickness of 1 μ η ι.Second metal wire uses copper, is obtained with the electro-plating method of the prior art, is located at except second surface, with a thickness of 5 μ η ι.Second through-hole uses copper, is obtained with the electro-plating method of the prior art, and diameter is 20 μ η ι.The spiral inductor is 10 circles, and the width of every turn coil is 60 μ η ι, and the spacing of coil is 100 μ η ι.It is 500 μ η ι that spiral inductor, which is located at the width (direction Α-Α) on pinboard, and the area of pinboard is 0.5 mm 2.According to the simulation result of Ansoft HFSS 3 D electromagnetic field analogue system, the inductance value of the spiral inductor is 6.7 nH, inductance density is 13.4 nH/mm 2, and D.C. resistance is 1.7 Ω, and the quality factor of the 20 MHz inch of typical frequencies in the powered-down source high frequency Jian are 0.5.
[0041] embodiment 1 is similarly spiral inductor, obtains the second metal wire and the second through-hole using material identical with comparative example 1, preparation method.First metal wire 311 is embedded in pinboard 300, groove is obtained with deep reaction ion etching method, and photoresist or silica is used to use the C of 60 sccm as the mask layer of etching4F 8Make passivation layer deposition, uses the SF of 150 sccm6Mix the 0 of 15 sccm2And 10 sccm C4F 8It is respectively 15 seconds and 10 seconds etchings and passivation step, the depth that gradually etching groove extremely needs with the period between the radio-frequency power of 500W alternately inch as etching gas.First metal thickness is 50
μηι.Since the thickness of the first metal wire 311 increases so that the resistance of unit length conducting wire reduces, it is possible to keep coil more dense around obtaining；Coil width and spacing are respectively reduced as 30 μ η ι and 50 μ η ι, the inductance under similarly switching plate suqare in embodiment 1 can wrap containing 20 turn coils.By the identical method simulation calculation of comparative example 1, the inductance value of the inductance in embodiment 1 is 15.8 η Η, and inductance density is 31.6 nH/mm2, D.C. resistance is 1.2 Ω, and the quality factor of 20 MHz inch are 1.33.It can be seen that comparing comparative example 1 under same pinboard inductance area, embodiment 1 can be improved 2.4 times of inductance density, significantly reduce inductance D.C. resistance, reduce 30%, improve 2.7 times of quality factor.
[0042] on the basis of the spiral inductor of comparative example 1, the position outside second surface 520 increases with a thickness of 2 μ η ι, relative permeability 600 comparative example 2, and resistivity is 10 (^ (the 0 of ^)9(^& 52]" 5As planar magnetic core 540.It is obtained using after the sputtering technology of the prior art with patterned side's method.Is obtained by the method for comparative example 1
One metal wire, the second metal wire and the second through-hole.By the identical method simulation calculation of comparative example 1, the inductance value of the inductance in comparative example 2 is 34.5 nH, and inductance density is 69.0 nH/mm2, D.C. resistance is 1.7 Ω, and the quality factor of 20 MHz inch are 2.4.
[0043] embodiment 2 obtains the first metal wire, the second metal wire and the second through-hole as described in Example 1, obtains planar magnetic core 540 by the method for comparative example 2.By the identical method simulation calculation of comparative example 1, the inductance value of the inductance in embodiment 2 is 145 nH, and inductance density is 290 nH/mm2, D.C. resistance is 1.2 Ω, and the quality factor of 20 MHz suns are 9.9.Under same pinboard inductance area, comparative example 2 is compared, embodiment 2 improves 4.2 times of inductance density, reduces the D.C. resistance 30% of inductance, improves 4.1 times of quality factor.
[0044] comparative example 3 is on the basis of the spiral inductor of comparative example 1, position in second surface 720 increases with a thickness of 20 μ η ι, relative permeability is 600, resistivity is the NiFe of 100 μ Ω α η as embedded magnetic core 740, can participate in the plating process carbon to improve resistivity.Embedded magnetic core 740 totally 20, every width is 10 μ η ι.Groove is formed in the deep reaction ion etching of the second surface prior art, the plating and planarization of magnetic material is carried out, forms the magnetic core from second surface insertion substrate.The first metal wire, the second metal wire and the second through-hole are obtained by the method for comparative example 1.By the identical method simulation calculation of comparative example 1, the inductance value of the inductance in comparative example 3 is 61.6 η Η, and inductance density is 123.2 nH/mm2, D.C. resistance is 1.7 Ω, and it is 2.9 that 20 MHz, which say very little quality factor,.
[0045] embodiment 3 obtains the first metal wire, the second metal wire and the second through-hole as described in Example 1, obtains embedded magnetic core 740 by the method for comparative example 3.By the identical method simulation calculation of comparative example 1, the inductance value of the inductance in embodiment 3 is 274 nH, and inductance density is 548 nH/mm2, D.C. resistance is 1.2 Ω, and the quality factor of 20 MHz suns are 4.75.Under same pinboard inductance area, comparative example 3 is compared, embodiment 3 improves 4.4 times of inductance density, reduces the D.C. resistance 30% of inductance, improves 1.6 times of quality factor.
Embodiments of the present invention
[0046] invention is further described in detail with reference to the accompanying drawings and examples.The pinboard with integrated magnetic device of the invention illustrates the structure and preparation method thereof of the pinboard (pinboard, integrated inductor) with magnetic device by taking integrated inductor as an example.
[0047] embodiment 1, magnetic device is without magnetic core.
[0048] as shown in figure 3, having the pinboard 300 of integrated magnetic device, include substrate 301, be located on substrate 301
The first surface 310 in face and the second surface 320 below substrate 301.Substrate 301 is semiconductor material or insulating materials, and semiconductor material is silicon, germanium or compound semiconductor, and preferred semiconductor material is silicon.Compound semiconductor is gallium nitride (GaN), GaAs (GaAs), silicon carbide (SiC), SiGe (SiGe).Insulating materials is glass, quartz or organic substrate.
[0049] the first metal wire (embedded metal line) 311 is embedded in the groove under first surface 310.Groove can be formed in substrate 301 by etching, such as the mode of deep reaction ion etching (deep reactive ion etch).First metal wire 311 is located at the inside of substrate 301, and upper part and first surface 310, which are realized, to be planarized.On the first surface 310 of planarization, it can continue to deposit multilayer dielectric layer and metal layer, the metal interconnection of pinboard first surface is used to form, in Fig. 3, induction structure is shown for clarity, is not drawn into the metal interconnection structure of 310 or more first surface.The second metal wire 321 is provided with outside second surface 320, pass through the metal (through-hole) 331 filled in the first through hole that is vertically arranged in substrate 301, realize being electrically connected for the second metal wire 321 and first surface 310, by the second through-hole 332 being vertically arranged in substrate 301, the second metal wire 321 of realization is electrically connected with the lower end 312 of embedded metal line 311 being located in substrate.
[0050] in Fig. 3,311 right end of the first metal wire that diagram is arranged in front first is electrically connected the right end of the second metal wire 321 of diagram front first through one second through-hole 332, the left end of the second metal wire 321 of front first is illustrated through the left end of the first metal wire 311 of another second through-hole 332 electrical connection diagram second
The right end of second metal wire 321 of the right end of first metal wire 311 of diagram second through another second through-hole 332 electrical connection diagram second, continuation is electrically connected subsequent first metal wire 311 and the second metal wire 321 in this way, the left end for being arranged in the second last metal wire 321 is electrically connected first surface 310 through first through hole 331, forms the coil of integrated inductor.
[0051] as shown in figure 4, pinboard400 (300) include substrate401 (301), first surface410 (310) and second surface 420 (320).First metal wire 411 (311) is extended into inside substrate 401 by first surface 410, forms Embedded metal wire.First metal wire 411 is located at the second metal wire 421 (321) outside substrate second surface 420 by the second through-hole 4 32 (332) connection being located inside substrate 401.Insulating layer 433 is equipped between first metal wire 4 11, the second metal wire 421 and the second through-hole 432 and substrate 401.Second surface 420 is externally provided with insulating layer 422, and the second metal wire 421 is arranged in insulating layer 422.First metal wire 411, the second metal wire 421 and the second through-hole 432 constitute a turn coil of integrated inductor coil.When substrate 401 be semiconductor material inch, inductance include the first metal wire 411, the second metal wire 421, the second through-hole 432, insulating layer 433,
Insulating layer 422 outside second surface 420.For the substrate of insulating material or High Resistivity Si, then insulating layer is not necessarily to.By on embedded metal line 411, second surface the second metal wire 421 and the second through-hole 432 form the coil of integrated inductor.
[0052] process that the prior art can be used on first surface 410 forms the insulating layer 413 being arranged between the metal interconnection layer of one layer or more metal wire 415, metal interconnection layer and the convex block 414 for being connected to outermost metal line, and convex block 414 is for the first surface of pinboard to be connected with external circuitry.Since the first surface 410 of the first metal wire 411 and pinboard realizes planarization, reduce influence of the out-of-flatness surface to subsequent manufacturing procedures, so metal wire 415 and convex block 414 are easily able to small spacing and line width, to increase the density of metal interconnection layer.Therefore, first surface 410 is more suitable for connecting a fairly large number of device of input/output end port, such as field-programmable gate array fpga chip, microprocessor chip and power management chip.
[0053] process that the prior art can be used on second surface 420 forms the insulation being arranged between the metal interconnection layer of one layer or more the second metal wire 421, metal interconnection layer or passivation layer 422 and the soldered ball 423 for being connected to the second metal wire of outermost layer, and soldered ball 423 is for the second surface of pinboard to be connected with external circuitry.The thickness of usual second metal wire 421 can be greater than the thickness of metal wire 415, so the spacing and line width of the second metal wire 421 are typically larger than the metal interconnection layer on first surface 410, therefore, second surface is more suitable for connecting the biggish device of line width, such as printed circuit board.
[0054] embodiment 2, pinboard are equipped with planar magnetic core.
[0055] on the basis of embodiment 1, embodiment 2 increases the planar magnetic core outside second surface.
[0056] as shown in figure 5, pinboard 500 (300) includes substrate 501 (301), first surface 510 (310), second surface 5 20 (320), the first metal wire 511 (311) being embedded in first surface, the second metal wire 521 (321) being formed in outside second surface, first through hole 531 (331) and the second through-hole 532 (332) for realizing electrical connection.
[0057] planar magnetic core 540 is provided with outside substrate 501, between second surface 520 and the second metal wire 521, insulating layer is covered with around planar magnetic core 540, insulating layer is for the insulation between planar magnetic core 540 and the second metal wire 521 and substrate 50 1.Planar magnetic core 540 is obtained by depositing for example to sputter, be deposited or be electroplated with patterned method.Planar magnetic core 540 is formed by the alloy, oxide or composite material or high-permeability material layer and insulation laminates (laminate) of such as nickel of the material layer with high magnetic permeability (Ni), iron (Fe), cobalt (Co) and manganese (M) magnetic element.The coil of integrated inductor, coil encircling planar magnetic core 540 are made of the first metal wire 511, the second through-hole 532 and the second metal wire 521.It can be by planar magnetic core 540 along being parallel to the coil magnetic line of force
The direction in direction (perpendicular to B-B) be divided into a plurality of (at least two), to reduce the vortex in planar magnetic core 540.
[0058] as shown in fig. 6, pinboard 600 (300) includes substrate 601 (301), first surface 610 (310), second surface 6 20 (320).First metal wire 611 (311) extends to inside substrate 601 from first surface 610, is electrically connected by the second through-hole 632 (332) with the second metal wire 621 (321) realization outside second surface 620.Insulating layer 633 (433) can be used, the first metal wire 611, the second metal wire 621, the second through-hole 632 insulate with substrate 60 1.One layer or more metal layer 615 (415) can be formed on first surface 610, be insulating layer 613 (413) between metal layer 615.Convex block 614 (41 4) and soldered ball 623 (423), the connection for pinboard and other devices can be respectively formed outside first surface 610 and second surface 620.Planar magnetic core 640 (540) is located between second surface 620 and the second metal wire 621, and the insulation between planar magnetic core 640 (540) and substrate 601, the second metal wire 621 can be realized by insulation or passivation layer 622 (422).
[0059] embodiment 3, pinboard have been embedded in embedded magnetic core.
[0060] on the basis of embodiment 1, embodiment 3 increases the embedded magnetic core in second surface.
[0061] as shown in Figure 7, pinboard 700 (300) includes substrate 701 (301), first surface 710 (310), second surface 7 20 (320), the first metal wire 711 (311) being embedded in first surface 710, the second metal wire 721 (321) being formed in outside second surface leads to lonely L732 (332) for realizing the first through hole 731 (331) of electrical connection and second.
[0062] embedded magnetic core 740 is equipped in second surface 720, embedded magnetic core 740 extends into inside substrate 701 from second surface 740, and insulating layer can be set between embedded magnetic core 740 and substrate 701.Embedded magnetic core 740 etches form groove after for example sputtered by deposition, be deposited or plating with graphically or the method that planarizes is formed.Embedded magnetic core 740 is formed by alloy, oxide or the composite material or high-permeability material layer of the material layer with high magnetic permeability such as nickel, iron Fe, cobalt Co and manganese Mn magnetic element with insulation laminates.The coil of integrated inductor, the embedded magnetic core 740 of coil encircling are made of the first metal wire 711, the second through-hole 732 and the second metal wire 721.Embedded magnetic core 740 is divided into 4 along vertical first metal wire, 711 length direction, to reduce the vortex in magnetic core.The quantity of adjustment magnetic core segmentation be can according to need at 1 or more.
[0063] as shown in figure 8, pinboard 800 (300) includes substrate 801 (301), first surface 810 (310), second surface 8 20 (320).First metal wire 811 (311) extends to substrate interior from first surface, is electrically connected by the second through-hole 832 (432) with the second metal wire 821 (321) realization outside second surface.Insulating layer 8 can be used
First metal wire 811, the second metal wire 821, the second through-hole 832 are insulated 33 (433) with substrate 801.One layer or more metal layer 815 (415) can be formed on first surface 810, be insulating layer 813 (413) between metal layer 815.It can be respectively formed convex block 814 and soldered ball 823 outside first surface 810 and second surface 820, the connection for pinboard and other devices.Embedded magnetic core 840 (740) is located in second surface 820, extends into inside substrate 801 from second surface 820, can realize the insulation between embedded magnetic core 840 and substrate 801 using insulating layer 841.The insulation between the second metal wire 821 and substrate 801 can be realized using insulation or passivation layer 822 (422).Embedded magnetic core 841 (740) is divided into 4 along vertical first metal wire 811 (711) length direction, to reduce the vortex in magnetic core.
[0064] it in embodiment 2-3, describes and magnetic core is set in the inductance using embedded metal line.It can also be arranged by different coils, other magnetic devices, such as coupling inductance and transformer are set on pinboard.The arrangement mode of displaying magnetic device coil for clarity, is not shown magnetic core, convex block, ball structure in embodiment 4-7.It, can be according to structure setting magnetic core, convex block, the ball structure of embodiment 1-3 in actual use inch
[0065] embodiment 4, D in Fig. 3 to, for include magnetic device pinboard 900 (300) overlook direction, as shown in figure 9, pinboard 900 (300) includes by illustrating 911 (311) of adjacent three the first metal wires (embedded metal line), diagram first group of coil that the second through-hole 932 (332) of adjacent two the second metal wires 921 (321) being located at outside second surface and connection first metal wire and the second metal wire forms above above.Pinboard 900 further comprises second group of coil being made of the second through-hole 960 (332) of diagram 940 (311) of following adjacent three the first metal wires (embedded metal line), following adjacent two the second metal wires 950 (321) being located at outside second surface of diagram and connection first metal wire and the second metal wire.There is magnetic couplings between first group of coil and second group of coil.
[0066] embodiment 5,
D in Fig. 3 to, for include magnetic device pinboard 1000 (300) overlook direction, as shown in Figure 10, pinboard 1000 (300) includes first group of coil being made of three the first metal wires (embedded metal line) 1011 (311) of interval single, the second through-hole 1032 (332) of two the second metal wires 1021 (321) and connection first metal wire and the second metal wire outside second surface for being spaced single.Pinboard 1000 further comprise by 1040 (311) of another three the first metal wires (embedded metal line) of interval single, interval single outside second surface another two the second metal wires 1050 (321) and connect first metal wire and the second metal wire
Second group of coil of the second through-hole 1060 (332) composition.The metal wire of second group of coil replaces placement with the first metal wire of first group of coil and the second metal wire, forms the structure mutually entwined, and there is magnetic couplings.
[0067] embodiment 4 and embodiment 5 show the case where two groups of coils intercouple, and in actual use, can according to need comprising the coil more than two to intercouple.
[0068] embodiment 6, D in Fig. 3 to, for include magnetic device pinboard 1100 (300) overlook direction.It as shown in figure 11, include the magnetic core 1111 of magnetic circuit closure in pinboard 1100 (300).
[0069] embodiment 7, D in Fig. 3 to, for include magnetic device pinboard 1200 (300) overlook direction.It as shown in figure 12, include that magnetic core 1221 (1311) has gap 1222, by adjusting the size in gap, the inductance value and saturation current value parameter of adjustable magnetic device in pinboard 1200 (300).
[0070] pinboard in embodiment 1-7, in the semiconductor substrate in the region that first surface or second surface are not occupied by magnetic device, other active devices, passive device may include, or the combination of active device and passive device, such as integrated circuit.
Industrial applicibility
[0071] compared with the existing technology, through silicon via connects the inductance that the front and back metal wire of substrate is formed, it is all the metal wire that substrate surface is utilized, documents 1 can form Embedded metal wire without space in the substrate, the positive metal wire of documents 2 and 3 is not built-in in the groove of substrate face, and documents 4 are nor the embedded metal line being formed in the groove of substrate face.A part of metallic conductor of magnetic device is embedded in substrate by the present invention, significantly reduces the resistance of inductance, is improved the inductance density and quality factor of integrated magnetic device, is reached reduction volume, the effect of raising efficiency.A part of metallic conductor of magnetic device is embedded in substrate, the flatness of switching plate surface is not influenced, is not take up existing metal interconnection wire, under the premise of guaranteeing that silicon pinboard interconnecting function itself is not impaired, realizes the integrated of high performance magnetic device.Therefore, it is of the invention do not lose switching plate thickness it is small, interconnection line width it is small, in the case where the big advantage of interconnection density, the integrated magnetic device of high inductance density and quality factor is integrated in pinboard.
Claims (1)
- ClaimsA kind of [claim 1] pinboard with integrated magnetic device, is equipped with magnetic device on substrate, and the coil of magnetic device is connected and composed by metal wire, it is characterised in that: the metal wire is arranged in substrate.[claim 2] pinboard with integrated magnetic device according to claim 1, it is characterized by: the metal wire is the first metal wire and the second metal wire, the first metal wire and the second metal wire are electrically connected to form coil by the second through-hole for being wherein filled with metal.[claim 3] pinboard with integrated magnetic device according to claim 2, it is characterised in that: the coil is scroll.[claim 4] pinboard with integrated magnetic device according to claim 3, it is characterised in that: first metal wire is arranged in substrate.[claim 5] pinboard with integrated magnetic device according to claim 4, it is characterised in that: the first metal wire insertion setting is on substrate in the first surface in face.[claim 6] pinboard with integrated magnetic device according to claim 5, it is characterised in that: second metal wire is arranged outside second surface.Be equipped in [claim 7] described substrate the second metal wire of electrical connection and first surface wherein filled with metal theOne through-hole.[claim 8] pinboard with integrated magnetic device according to claim 7, it is characterized by: first metal wire, the second metal wire and the second through-hole composition coil group for being wherein filled with metal, magnetic couplings between one group of coil and another group of coil；Between one group of coil and the first metal wire and the second metal wire of another group of coil close to or interval the first metal wire of single and the second metal wire.[claim 9] pinboard with integrated magnetic device according to claim 8, it is characterized by: being provided with the magnetic core of plane outside the substrate, between second surface and the second metal wire, the magnetic circuit of the magnetic core is closed or has gap.[claim 10] pinboard with integrated magnetic device according to claim 8, it is characterized by: being equipped with Embedded magnetic core in the second surface, embedded magnetic core extends into substrate interior from second surface, and the magnetic circuit of the magnetic core is closed or has gap.
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| PCT/CN2016/079123 WO2017177389A1 (en) | 2016-04-13 | 2016-04-13 | Interposer having integrated magnetic device |
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| CN108369852B CN108369852B (en) | 2021-05-28 |
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| CN108369852B (en) | 2021-05-28 |
| WO2017177389A1 (en) | 2017-10-19 |
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