CN102507717B - Device and method for on-orbit monitoring of charging of satellite material surface - Google Patents

Device and method for on-orbit monitoring of charging of satellite material surface Download PDF

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CN102507717B
CN102507717B CN 201110321511 CN201110321511A CN102507717B CN 102507717 B CN102507717 B CN 102507717B CN 201110321511 CN201110321511 CN 201110321511 CN 201110321511 A CN201110321511 A CN 201110321511A CN 102507717 B CN102507717 B CN 102507717B
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sample
monitoring
vacuum tank
solenoid valve
satellite
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CN102507717A (en
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汤道坦
秦晓刚
薛玉雄
柳青
陈益峰
李存惠
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510 Research Institute of 5th Academy of CASC
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Abstract

The invention relates to a device and a method for on-orbit monitoring of charging of a satellite material surface, belonging to the technical field of space application. The device comprises an electron gun, a non-contact potentiometer probe, a three-dimensional transmission mechanism, a non-contact surface potentiometer, an electron beam current density measuring system, a monitoring electrode, a supporting structure, a first electromagnetic valve, a second electromagnetic valve, a diffusion pump, a third electromagnetic valve, a vacuum box, a mechanical pump, a vacuum penetrating wall, a measurement circuit interface and a measurement circuit. The test method comprises the steps as follows: sending an electron to a sample for monitoring the electrode surface under a vacuum condition, adjusting the position of the non-contact potentiometer probe through the three-dimensional transmission mechanism, recording charging potential Vsurface on the sample surface, measuring leakage current I through the measurement circuit, and finally obtaining a proportional relation coefficient K by known sample resistance rho according to the formula that Vsurface is proportional to KrhoI. According to the invention, the on-orbit surface charging condition of the satellite material is inverted by monitoring the leakage current of the sample in a space environment, and the device and the method has the advantage of simple physical structure and is easy to carry in space.

Description

A kind of satellite material surface charging is at the device and method of rail monitoring
Technical field
The present invention relates to a kind of satellite material surface charging at the device and method of rail monitoring, belong to technical field of space application.
Background technology
Charged in satellite is generally to be injected in material at the high energy electron of 0.1～10MeV by energy in the space to cause.Above-mentioned high energy electron can penetrate satellite structure (as satellite surface material, cable sheath etc.) and deposited charge on cable insulation, printed circuit board, capacitor part, synthetic circuit bag or suspended conductor.When if in medium, the rate of sedimentation of incident electron is released speed over it, in medium, electric density will increase gradually, electric field intensity also strengthens thereupon, and discharge in occuring when built in field intensity surpasses the disruptive strength of dielectric material is also referred to as electronic induction electromagnetic pulse (ECEMP).When being coupled to the Spacecraft Electronic system by the transient pulse of discharge generation, can cause that logic switch is abnormal, the permanent inefficacy of electronic system or sensitive element hydraulic performance decline, so that the destruction of whole system.Except the electromagnetic interference (EMI) that produces electronic equipment with damaging, static discharge also causes damage or the physical property decline of surfacing.Due to discharge generation amount of localized heat and produce material damage at arc-discharge zone, not only damage the integrality of spacecraft, but also changed the physical characteristics of surfacing, thereby finally destroy the normal operation of spacecraft.Thereby interior discharge is usually more direct to the harm of the work of satellite system close to electronic system.Along with the raising of satellite electron system performance and the use of a large amount of new materials, in the dielectric material that satellite causes space high energy electron environment, the charged effect problem is also more and more responsive, and in satellite, charged guard technology becomes one of gordian technique that development long-life applied satellite institute must solution.Carry out charged guard technology research in satellite, need to be charged in the ground simulation satellite, and discharge pulse in monitoring, estimate the interior charged barrier propterty that star is used material.So in satellite, the monitoring technology of discharge pulse has great significance for charged protection in satellite.
Existing in the rail monitoring method both at home and abroad, for example shake the condenser type monitoring technology, have complex structure, tuning fork and make miscellaneous problem, therefore need a kind of physical arrangement of exploitation simple, can measure multiple satellite surface dielectric material commonly used, be easy to that the space carries in rail monitoring device and method.
Summary of the invention
For having now at rail monitoring device complex structure, making miscellaneous defective, the purpose of this invention is to provide a kind of device and method in the rail monitoring for the satellite surface charge condition.
For achieving the above object, technical scheme of the present invention is as follows:
A kind of satellite material surface charging is at the rail the method for monitoring, and described method is as follows:
Under vacuum condition to satellite material sample electron emission space environmental simulation, instrumented satellite material sample surface potential V SurfaceWith measurement leakage current I, the bulk resistor ρ of satellite material sample is known, according to formula V Surface∝ K ρ I obtains the proportionality constant COEFFICIENT K; In rail monitoring, by the leakage current I of inflight measurement satellite material, the bulk resistor ρ by the proportionality constant COEFFICIENT K asked and known satellite material then is according to formula V in reality SurfaceThe surface potential V of ∝ K ρ I Calculation of Satellite material Surface, to realize monitoring at rail satellite material surface charge condition.
A kind of satellite material surface charging is at the device of rail monitoring, described device comprises electron gun, contactless pot probe, three dimensional transmission mechanism, contactless surface potential meter, beam current density measuring system, monitoring electrode, supporting construction, the first solenoid valve, the second solenoid valve, diffusion pump, the 3rd solenoid valve, mechanical pump, vacuum tank, vacuum is crossed wall, metering circuit interface and metering circuit.
Wherein, in the vacuum tank inner and upper, electron gun is installed, electron gun transmitting terminal and monitoring electrode centers over against; The monitoring electrode be positioned at vacuum tank inner and with vacuum tank all around inwall do not contact; Sample is placed on the monitoring electrode surface.
Contactless pot probe is positioned at vacuum tank inside, and three dimensional transmission mechanism is installed on the vacuum tank internal side wall.
Contactless pot probe is connected with three dimensional transmission mechanism; Contactless surface potential meter is positioned at the vacuum tank outside, and contactless surface potential meter penetrates in vacuum tank by wire and is connected with contactless pot probe 2.
The beam current density measuring system comprises the Faraday cup and the microgalvanometer that is positioned at the vacuum tank outside that are positioned at vacuum tank inside; Faraday cup is positioned at the electron gun radiation scope but not under electron gun, the bottom of Faraday cup does not contact with sample surfaces; Microgalvanometer penetrates in vacuum tank by wire and is connected with Faraday cup.
The perforate of vacuum tank bottom surface, vacuum is crossed wall and is arranged in this hole.
Supporting construction is installed in monitoring electrode bottom; Supporting construction is positioned on the bracing frame that is placed in the vacuum tank bottom surface; Monitoring electrode lower end connects wire, and wire passes successively and is divided into two after supporting construction and vacuum are crossed wall to vacuum tank outside, a ground connection, and another root passes through the metering circuit input end interface and is connected with metering circuit.
Mechanical pump, diffusion pump and the solenoid valve of being connected are connected successively by pipeline and are connected with vacuum tank by the first solenoid valve afterwards, the 3rd solenoid valve is parallel to the two ends of diffusion pump and the second solenoid valve, and the 3rd solenoid valve one end is connected with the first solenoid valve, and the other end is connected with mechanical pump.
Wherein, the monitoring electrode material is aluminium or copper; Supporting construction is insulating material, as polyformaldehyde resin or teflon high resistance insulating material; Metering circuit is the amplifying circuit of G ohm magnitude input impedance.
Wherein, preferred electron rifle transmitting terminal is 20～50cm to the distance of sample surfaces; The pop one's head in distance of sample surfaces of contactless pot is 1～2cm.
A kind of satellite material surface charging is at the rail the method for monitoring, and described method uses a kind of satellite material surface charging provided by the present invention at the device of rail monitoring, and concrete steps are as follows:
Step 1, sample is fixed on the monitoring electrode surface.
Step 2, open mechanical pump, then open the first solenoid valve and the 3rd solenoid valve vacuumizes, vacuum tightness≤10 in vacuum tank -1Open diffusion pump during Pa, close the 3rd solenoid valve and open the second solenoid valve and be evacuated to vacuum tightness in vacuum tank≤10 -3Pa.
Step 3, open the electron gun divergent bundle, the beam current density of electron beam is 0.2～5.0nA/cm 2, energy is 5～30KeV.
Step 4, move by three dimensional transmission mechanism, regulate the position of contactless pot probe, make when the sample surfaces current potential is measured contactless pot probe be positioned at sample and monitoring electrode directly over, when contactless surface potential meter shows reading, probe is shifted out the radiation scope of electron gun; After the surface-potential stabilization of contactless surface potential meter show sample, the sample surfaces charging reaches balance, records sample surfaces current potential V Surface, and measure the leakage current I of monitoring electrode by metering circuit, the bulk resistor by known sample at last is according to formula V Surface∝ K ρ I substitution numerical value obtains the proportionality constant COEFFICIENT K of sample surfaces current potential and leakage current; Wherein, V SurfaceBe the surface potential of sample, K is the proportionality constant coefficient, and ρ is the bulk resistor of sample, and I is leakage current.
Beam current density and the electron energy of step 5, change electron gun, repeating step four obtains repeatedly averaging after the K value, obtains proportionality constant COEFFICIENT K accurately.
Step 6, in reality in rail monitoring, by the leakage current I of inflight measurement satellite material, the bulk resistor ρ by the proportionality constant COEFFICIENT K asked and known satellite material then, the surface potential V of Calculation of Satellite material Surface, realize monitoring at rail of satellite material surface charge condition.
Wherein, described sample is the satellite surface typical material, as pitch-dark in S13GLO white paint, Z306 chemglaze, Kapton or Teflon, and thickness of sample is 0.5mm～2mm.
Beneficial effect
The present invention is take the satellite surface typical material as sample, by monitoring carry the leakage current of sample under the space charge environment come the inverting satellite surface with typical material at the track surface charge condition.The present invention has advantages of that physical arrangement is simple, can measure multiple satellite surface dielectric material commonly used, is easy to the space lift-launch.
Description of drawings
Fig. 1 is that satellite material surface charging of the present invention is at rail monitoring device schematic diagram;
Wherein, 1-electron gun, 2-contactless pot probe, 3-three dimensional transmission mechanism, 4-contactless surface potential meter, 5-beam current density measuring system, 6-monitoring electrode, 7-supporting construction, the 8-the first solenoid valve, the 9-the second solenoid valve, 10-diffusion pump, the 11-the three solenoid valve, 12-mechanical pump, 13-vacuum tank, 14-vacuum is crossed wall, 15-metering circuit interface, 16-metering circuit.
Embodiment
Below by embodiment, the invention will be further described.
Embodiment
A kind of satellite material surface charging as shown in Figure 1 is at the device of rail monitoring, described device comprises electron gun 1, contactless pot probe 2, three dimensional transmission mechanism 3, contactless surface potential meter 4, beam current density measuring system 5, monitoring electrode 6, supporting construction 7, the first solenoid valve 8, the second solenoid valve 9, diffusion pump 10, the three solenoid valves 11, mechanical pump 12, vacuum tank 13, vacuum are crossed wall 14, metering circuit interface 15 and metering circuit 16.
Wherein, in vacuum tank 13 inner and upper, electron guns 1 are installed, electron gun 1 transmitting terminal and monitoring electrode 6 centers over against; Monitoring electrode 6 be positioned at vacuum tank 13 inner and with vacuum tank 13 all around inwall do not contact; Sample is placed on monitoring electrode 6 surfaces; Electron gun 1 transmitting terminal is 20～50cm to the distance of sample surfaces.
Contactless pot probe 2 is positioned at vacuum tank 13 inside, and vacuum tank 13 sidewalls have two through holes in up and down, and three dimensional transmission mechanism 3 is installed on vacuum tank 13 internal side wall.
Contactless pot probe 2 is connected with three dimensional transmission mechanism 3 by fixture; Contactless pot probe 2 distances to sample surfaces are 1～2cm; Contactless surface potential meter 4 is positioned at vacuum tank 13 outsides, and contactless surface potential meter 4 passes upper through hole by wire and is connected with contactless pot probe 2.
Beam current density measuring system 5 comprises the Faraday cup and the microgalvanometer that is positioned at vacuum tank 13 outsides that are positioned at vacuum tank 13 inside; Microgalvanometer passes lower through-hole by wire and is connected with Faraday cup; Faraday cup is positioned at electron gun 1 radiation scope but not under electron gun 1, the bottom of Faraday cup does not contact with sample surfaces.
Vacuum tank 13 bottom surface perforates, vacuum is crossed wall 14 and is arranged in this hole.
Supporting construction 7 is installed in monitoring electrode 6 bottoms; Supporting construction 7 is positioned on the bracing frame that is placed in vacuum tank 13 bottom surfaces; Monitoring electrode 6 lower ends connect wires, and wire passes successively and is divided into two after supporting construction 7 and vacuum are crossed wall 14 to vacuum tank 13 outside, a ground connection, and another root passes through metering circuit input end interface 15 and is connected with metering circuit 16.
Mechanical pump 12, diffusion pump 10 and the solenoid valve 9 of being connected are connected successively by pipeline and are connected with vacuum tank 13 by the first solenoid valve 8 afterwards, the 3rd solenoid valve 11 is parallel to the two ends of diffusion pump 10 and the second solenoid valve 9, and the 3rd solenoid valve 11 1 ends are connected with the first solenoid valve 8, and the other end is connected with mechanical pump 12.
Wherein, monitoring electrode 16 is length of side 5cm, the square aluminium sheet of thick 0.15cm; Supporting construction 17 materials are teflon; Metering circuit 13 is the amplifying circuit of G ohm magnitude input impedance; Contactless surface potential meter 4 is the contactless surface potential meter of trek341A.
A kind of satellite material surface charging uses a kind of satellite material surface charging provided by the present invention at the device of rail monitoring at the rail the method for monitoring, and described method concrete steps are as follows:
Step 1, with thickness be the S13GLO white paint of 1mm as sample, be bonded and fixed at monitoring electrode 6 surfaces by epoxy conducting.
Step 2, open mechanical pump 12, then open the first solenoid valve 8 and the 3rd solenoid valve 11 vacuumizes, when the interior vacuum tightness of vacuum tank 13 is 10 -1 Open diffusion pump 10 during Pa, close the 3rd solenoid valve 11 and open the second solenoid valve 9 and vacuumize, to the interior vacuum tightness of vacuum tank 13 be 10 -3Pa.
Step 3, open electron gun 1 divergent bundle, the beam current density of regulating electron beam is 0.25nA/cm 2, electron energy is 5KeV; The radiation scope of its electron gun is Φ 30cm.
Step 4, by three dimensional transmission mechanism 3 motion, regulate the position of contactless pot probe 2, make when the sample surfaces current potential is measured contactless pot probe 2 be positioned at sample and monitoring electrode 6 directly over, when contactless surface potential meter 4 shows reading, probe 2 is shifted out the radiation scope of electron gun 1; After contactless surface potential meter 4 show sample surface-potential stabilizations, the sample surfaces charging reaches balance, records sample surfaces current potential V Surface, and measure the leakage current I of monitoring electrodes 6 by metering circuit 16, the bulk resistor by known sample at last is according to formula V Surface∝ K ρ I substitution numerical value obtains the proportionality constant COEFFICIENT K of sample surfaces current potential and leakage current; Wherein, V SurfaceBe the sample surfaces current potential, K is the proportionality constant coefficient, and ρ is the bulk resistor of sample, and I is leakage current.
Step 5, the beam current density of getting respectively electron gun 1 are 0.5,1.0 and 2.0nA/cm 2, corresponding electron energy is respectively 10,15 and 20KeV, and repeating step four obtains repeatedly averaging after the K value, obtains proportionality constant COEFFICIENT K accurately.
Step 6, in reality in rail monitoring, by the leakage current I of inflight measurement satellite material, the bulk resistor ρ by the proportionality constant COEFFICIENT K asked and known satellite material then, the surface potential V of Calculation of Satellite material Surface, realize monitoring at rail of satellite material surface charge condition.
In sum, these are only preferred embodiment of the present invention, is not for limiting protection scope of the present invention.Within the spirit and principles in the present invention all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.

Claims (5)

1. a satellite material surface charging is at the rail the method for monitoring, and it is characterized in that: described method is as follows:
Under vacuum condition to satellite material sample electron emission, instrumented satellite material sample surface potential V SurfaceWith measurement leakage current I, the bulk resistor ρ of satellite material sample is known, according to formula V Surface∝ K ρ I obtains the proportionality constant COEFFICIENT K; In rail monitoring, by the leakage current I of inflight measurement satellite material, the bulk resistor ρ by the proportionality constant COEFFICIENT K asked and known satellite material then is according to formula V in reality SurfaceThe surface potential V of ∝ K ρ I Calculation of Satellite material Surface
2. the ground simulation test device of satellite material surface charging, it is characterized in that: described device comprises electron gun (1), contactless pot probe (2), three dimensional transmission mechanism (3), contactless surface potential meter (4), beam current density measuring system (5), monitoring electrode (6), supporting construction (7), the first solenoid valve (8), the second solenoid valve (9), diffusion pump (10), the 3rd solenoid valve (11), mechanical pump (12), vacuum tank (13), vacuum is crossed wall (14), metering circuit interface (15) and metering circuit (16),
Wherein, in vacuum tank (13) inner and upper, electron gun (1) is installed, electron gun (1) transmitting terminal and monitoring electrode (6) center over against; Monitoring electrode (6) be positioned at vacuum tank (13) inner and with vacuum tank (13) all around inwall do not contact; Sample is placed on monitoring electrode (6) surface;
Contactless pot probe (2) is positioned at vacuum tank (13) inside, and three dimensional transmission mechanism (3) is installed on vacuum tank (13) internal side wall;
Contactless pot probe (2) is connected with three dimensional transmission mechanism (3); Contactless surface potential meter (4) is positioned at vacuum tank (13) outside, contactless surface potential meter (4) by wire penetrate in vacuum tank (13) with contactless pot pop one's head in (2) be connected;
Beam current density measuring system (5) comprises that one is positioned at vacuum tank (13) inner Faraday cup and a microgalvanometer that is positioned at the vacuum tank outside; Faraday cup is positioned at electron gun (1) radiation scope but not under electron gun (1), the bottom of Faraday cup does not contact with sample surfaces; Microgalvanometer penetrates in vacuum tank (13) by wire and is connected with Faraday cup;
Vacuum tank (13) bottom surface perforate, vacuum is crossed wall (14) and is arranged in this hole;
Supporting construction (7) is installed in monitoring electrode (6) bottom; Monitoring electrode (6) lower end connects wire, and wire passes successively and is divided into two after supporting construction (7) and vacuum are crossed wall (14) outside vacuum tank (13), a ground connection, and another root passes through metering circuit input end interface (15) and is connected with metering circuit (16);
Mechanical pump (12), diffusion pump (10) and the solenoid valve (9) of being connected are connected successively by pipeline and are connected with vacuum tank (13) by the first solenoid valve (8) afterwards, the 3rd solenoid valve (11) is parallel to the two ends of diffusion pump (10) and the second solenoid valve (9), and the 3rd solenoid valve (11) one ends are connected with the first solenoid valve (8), and the other end is connected with mechanical pump (12);
Wherein, monitoring electrode (6) material is aluminium or copper; Supporting construction (7) is insulating material; Metering circuit (16) is the amplifying circuit of G ohm magnitude input impedance.
3. the ground simulation monitoring device of a kind of satellite material surface charging as claimed in claim 2, it is characterized in that: electron gun (1) transmitting terminal is 20～50cm to the distance of sample surfaces.
4. the ground simulation monitoring device of a kind of satellite material surface charging as claimed in claim 2, it is characterized in that: contactless pot probe (2) is 1～2cm to the distance of sample surfaces.
5. a satellite material surface charging at the rail the method for monitoring, is used the device of the ground simulation monitoring of a kind of satellite material surface charging as claimed in claim 2, and it is characterized in that: described method concrete steps are as follows:
Step 1, sample is fixed on monitoring electrode (6) surface;
Step 2, open mechanical pump (12), then open the first solenoid valve (8) and the 3rd solenoid valve (11) vacuumizes, vacuum tightness≤10 in vacuum tank (13) -1Open diffusion pump (10) during Pa, close the 3rd solenoid valve (11) and open the second solenoid valve (9), be evacuated to the interior vacuum tightness of vacuum tank (13)≤10 -3Pa;
Step 3, open electron gun (1) divergent bundle, the beam current density of electron beam is 0.2～5.0nA/cm 2, energy is 5～30KeV;
Step 4, by three dimensional transmission mechanism (3) motion, regulate the position of contactless pot probe (2), make when the sample surfaces current potential is measured contactless pot probe (2) be positioned at sample and monitoring electrode (6) directly over, when contactless surface potential meter (4) showed reading, will pop one's head in (2) shifted out the radiation scope of electron gun (1); After contactless surface potential meter (4) show sample surface-potential stabilization, the sample surfaces charging reaches balance, records sample surfaces current potential V Surface, and measure the leakage current I of monitoring electrode (6) by metering circuit (16), the bulk resistor by known sample at last is according to formula V Surface∝ K ρ I substitution numerical value obtains the proportionality constant COEFFICIENT K of sample surfaces current potential and leakage current; Wherein, V SurfaceBe the surface potential of sample, K is the proportionality constant coefficient, and ρ is the bulk resistor of sample, and I is leakage current;
Beam current density and the electron energy of step 5, change electron gun (1), repeating step four obtains repeatedly averaging after the K value, obtains proportionality constant COEFFICIENT K accurately;
Step 6, in reality in rail monitoring, by the leakage current I of inflight measurement satellite material, the bulk resistor ρ by the proportionality constant COEFFICIENT K asked and known satellite material then, the surface potential V of Calculation of Satellite material Surface
Wherein, described sample is the satellite surface typical material.
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