CN102497216A - 一种可配置的接收信号强度指示电路 - Google Patents
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103236864A (zh) * | 2013-04-10 | 2013-08-07 | 中国科学院微电子研究所 | 一种版图面积缩小的接收信号强度指示电路 |
CN103973235A (zh) * | 2014-04-10 | 2014-08-06 | 嘉兴禾润电子科技有限公司 | 限幅放大器 |
CN104009723A (zh) * | 2014-05-30 | 2014-08-27 | 深圳贝特莱电子科技有限公司 | 一种集成的全差分放大器 |
CN104242843A (zh) * | 2014-09-09 | 2014-12-24 | 长沙景嘉微电子股份有限公司 | 一种放大器输出限幅电路 |
CN104280603A (zh) * | 2013-07-09 | 2015-01-14 | 清华大学 | 功率检测电路 |
CN107991524A (zh) * | 2017-12-14 | 2018-05-04 | 上海玮舟微电子科技有限公司 | 一种低功耗信号能量指示电路 |
CN110429916A (zh) * | 2018-11-29 | 2019-11-08 | 西安电子科技大学 | 提高温度特性的限幅放大装置 |
CN111835299A (zh) * | 2020-09-21 | 2020-10-27 | 成都嘉纳海威科技有限责任公司 | 一种具有可变带宽的可变增益放大器 |
CN115314104A (zh) * | 2022-08-09 | 2022-11-08 | 无锡飞龙九霄微电子有限公司 | 一种低噪声的rssi电路及工作方法 |
Citations (7)
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US5893028A (en) * | 1997-01-08 | 1999-04-06 | Advanced Micro Devices, Inc. | Intermediate frequency gain stage with rectifier |
US6195399B1 (en) * | 1994-03-28 | 2001-02-27 | Ericsson Inc. | Method and apparatus for converting a wideband if signal to a complex (quadrature) baseband signal |
US20030184277A1 (en) * | 2002-03-26 | 2003-10-02 | Shahla Khorram | Variable gain received signal strength indicator |
US20050077962A1 (en) * | 2001-07-06 | 2005-04-14 | Peter Klein | Interface circuit for connecting to an output of a frequency converter |
CN1728544A (zh) * | 2005-06-17 | 2006-02-01 | 华东师范大学 | BiCMOS对数放大器 |
JP2009284387A (ja) * | 2008-05-26 | 2009-12-03 | Seiko Epson Corp | 半導体集積回路 |
CN101621810A (zh) * | 2008-07-04 | 2010-01-06 | 博通集成电路(上海)有限公司 | 接收信号强度指示探测器和校准接收信号强度指示的方法 |
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- 2011-12-02 CN CN201110396486.1A patent/CN102497216B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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US6195399B1 (en) * | 1994-03-28 | 2001-02-27 | Ericsson Inc. | Method and apparatus for converting a wideband if signal to a complex (quadrature) baseband signal |
US5893028A (en) * | 1997-01-08 | 1999-04-06 | Advanced Micro Devices, Inc. | Intermediate frequency gain stage with rectifier |
US20050077962A1 (en) * | 2001-07-06 | 2005-04-14 | Peter Klein | Interface circuit for connecting to an output of a frequency converter |
US20030184277A1 (en) * | 2002-03-26 | 2003-10-02 | Shahla Khorram | Variable gain received signal strength indicator |
CN1728544A (zh) * | 2005-06-17 | 2006-02-01 | 华东师范大学 | BiCMOS对数放大器 |
JP2009284387A (ja) * | 2008-05-26 | 2009-12-03 | Seiko Epson Corp | 半導体集積回路 |
CN101621810A (zh) * | 2008-07-04 | 2010-01-06 | 博通集成电路(上海)有限公司 | 接收信号强度指示探测器和校准接收信号强度指示的方法 |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103236864A (zh) * | 2013-04-10 | 2013-08-07 | 中国科学院微电子研究所 | 一种版图面积缩小的接收信号强度指示电路 |
CN104280603A (zh) * | 2013-07-09 | 2015-01-14 | 清华大学 | 功率检测电路 |
CN104280603B (zh) * | 2013-07-09 | 2016-12-28 | 清华大学 | 功率检测电路 |
CN103973235A (zh) * | 2014-04-10 | 2014-08-06 | 嘉兴禾润电子科技有限公司 | 限幅放大器 |
CN104009723B (zh) * | 2014-05-30 | 2017-11-07 | 深圳贝特莱电子科技股份有限公司 | 一种集成的全差分放大器 |
CN104009723A (zh) * | 2014-05-30 | 2014-08-27 | 深圳贝特莱电子科技有限公司 | 一种集成的全差分放大器 |
CN104242843A (zh) * | 2014-09-09 | 2014-12-24 | 长沙景嘉微电子股份有限公司 | 一种放大器输出限幅电路 |
CN107991524A (zh) * | 2017-12-14 | 2018-05-04 | 上海玮舟微电子科技有限公司 | 一种低功耗信号能量指示电路 |
CN107991524B (zh) * | 2017-12-14 | 2023-12-22 | 张家港康得新光电材料有限公司 | 一种低功耗信号能量指示电路 |
CN110429916A (zh) * | 2018-11-29 | 2019-11-08 | 西安电子科技大学 | 提高温度特性的限幅放大装置 |
CN110429916B (zh) * | 2018-11-29 | 2023-05-16 | 西安电子科技大学 | 提高温度特性的限幅放大装置 |
CN111835299A (zh) * | 2020-09-21 | 2020-10-27 | 成都嘉纳海威科技有限责任公司 | 一种具有可变带宽的可变增益放大器 |
CN115314104A (zh) * | 2022-08-09 | 2022-11-08 | 无锡飞龙九霄微电子有限公司 | 一种低噪声的rssi电路及工作方法 |
CN115314104B (zh) * | 2022-08-09 | 2024-03-12 | 无锡飞龙九霄微电子有限公司 | 一种低噪声的rssi电路及工作方法 |
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Effective date of registration: 20220907 Address after: Room 108, floor 1, building 4, No. 2 dacuodeng Hutong, Dongcheng District, Beijing 100010 Patentee after: Beijing Zhongke micro Investment Management Co.,Ltd. Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics, Chinese Academy of Sciences |