CN102486989A - Method and loading plate for degumming cleaning silicon wafer - Google Patents
Method and loading plate for degumming cleaning silicon wafer Download PDFInfo
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- CN102486989A CN102486989A CN2010105683213A CN201010568321A CN102486989A CN 102486989 A CN102486989 A CN 102486989A CN 2010105683213 A CN2010105683213 A CN 2010105683213A CN 201010568321 A CN201010568321 A CN 201010568321A CN 102486989 A CN102486989 A CN 102486989A
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Abstract
The invention relates to a method and a loading plate for degumming cleaning a crystalline silicon solar cell silicon wafer. The method mainly comprises the following steps of: bonding silicon blocks onto the loading plate distributed with porous channels, cutting the silicon blocks on a multiline cutting machine, simultaneously cutting through the porous channels of the loading plate, then connecting the porous channels with a water pipe, introducing tap water, leading the water to flow down from cut gaps, and washing away mortar bonded in the silicon wafer. By the use of the method, not only can the water consumption be greatly reduced and can water be saved by 70%, but also the cleaning effect is good, the staining rate is reduced, the quality of a product is improved, the rate of A-grade products can be improved by 1.5-2%, the cleaning time is shortened, and the labor productivity is improved by 33%; and for the loading plate for cleaning, the structure is simple, the manufacturing cost is low, the use is convenient and the production cost and the manufacturing cost of the silicon wafer are reduced.
Description
Technical field
The present invention relates to a kind of come unstuck cleaning method and frock thereof of crystal silicon solar energy battery silicon chip.
Background technology
The cleaning of coming unstuck of existing crystal silicon solar energy battery silicon chip is that the silicon rod that cutting is accomplished is put into prerinse machine automatic spray groove; The water column that goes out through spray groove both sides nozzle ejection directly washes the silicon rod both sides; Perhaps spray with manual mode through hydraulic giant; After treating that spray finishes, change next procedure over to.There is following problem in the existing cleaning of coming unstuck: 1. the water of spray is to get into from the silicon chip both sides; Mortar in the middle of two silicon chips that are difficult to be close to each other washes away; Thereby can't make the silicon chip natural separation of mutual vicinity; Thereby cause cleaning performance not good, cause great cleaning pressure to subsequent handling, thereby cause the contamination rate to rise.2. water consumption is big, and silicon rod of every cleaning on average must consume 1 ton running water.3. production efficiency is low, and the spray Cleaning for High Capacity of a silicon rod of every completion needs 15 minutes.
Summary of the invention
The present invention aims to provide a kind of silicon wafer stripping cleaning method and load plate thereof, reduces the contamination rate, reduces water consumption, raises labour productivity, and reduces the silicon chip manufacturing cost.
A kind of silicon wafer stripping cleaning method may further comprise the steps:
A, silico briquette is bonded on the load plate in duct;
B, the silico briquette that is cured is installed on the wire cutting machine, cutting zero point and depth of cut are set, steel wire was in the position, duct of load plate when cutting was accomplished;
C, cutting silico briquette, place, the duct of each degree of depth to load plate during cutting;
D, the silico briquette that finishes cutting move on in the prerinse groove, and load plate is last during installation, and silicon chip is connected the duct of load plate down with water pipe;
E, the tube valve of fetching boiling water let water get into the duct of load plate, and under action of gravity, water is washed open because of the sticking mutually in twos silicon chip of mortar effect along under the slit flow of cutting open, makes its natural separation;
F, the silicon chip that cleaning is finished are sent into subsequent processing.
Further, the said wire cutting machine of step b is a multi-line cutting machine.
Said step e water washing time is 10 minutes.
A kind of load plate that is used for the silicon wafer stripping cleaning is distributed with the duct in the plate, water pipe can be connected with the duct.
Further, the aperture cross-sectional area in the load plate is 15-40mm
2, the spacing between the duct is 20-40mm.
Preferably, the duct cross-sectional area in the load plate is 20mm2, and the spacing in duct is 25mm.
Further, load plate is divided into upper plate and lower plate, wherein on a plate groove is arranged, and the connected mode of upper plate and lower plate is bonding, and the groove on the back plate that bonds together seals into the duct.
Preferably, said groove is on lower plate.
Preferably, upper plate and lower plate are glass plate.
Cleaning method of the present invention can not only significantly reduce water consumption, and water saving can reach 70%, and cleaning performance is good; Reduce the contamination rate, improve the quality of products, can promote A level article rate 1.5-2%; Shorten scavenging period, raise labour productivity 33%, it is simple in structure to clean used load plate; Low cost of manufacture, easy to use, reduce the silicon chip manufacturing cost.
Description of drawings
Fig. 1 cleans the load plate structural representation for silicon wafer stripping.
Fig. 2 bonds to the sketch map on the load plate for silico briquette.
Fig. 3 cuts into the cleaning sketch map that comes unstuck behind the silicon chip for silico briquette.
Among the figure: 1-load plate, 2-duct, 3-silico briquette, 4-slit, 5-water pipe, 11-upper plate, 12-lower plate.
Embodiment
Below in conjunction with accompanying drawing and embodiment the present invention is further described:
The load plate that is used for the silicon wafer stripping cleaning is as shown in Figure 1, the duct 2 that distributing in the load plate 1, and duct 2 links to each other with water pipe 5, and duct 2 cross-sectional areas are 15-40mm
2, the spacing that the duct is 2 is 20-40mm.Preferably: duct 2 cross-sectional area 20mm
2, spacing 25mm.
Further, load plate 1 is divided into upper plate 11 and lower plate 12, on a plate groove is arranged therein, and the connected mode of upper plate 11 and lower plate 12 is bonding, and the groove enclosed shape on the plate of bonding back becomes duct 2.Preferably, groove is arranged on the lower plate 12.It is more convenient with the processing of lower plate 12 back load plate 1 to be divided into upper plate 11, and manufacturing cost is lower.
The material of load plate 1 can be glass, plastics etc., preferred glass.
A kind of silicon wafer stripping cleaning method, step is:
A. silico briquette 3 is bonded on the load plate 1 of inner duct;
B. the silico briquette that is cured 3 is installed on the wire cutting machine together with load plate 1, cutting zero point and depth of cut are set, steel wire is in 2 positions, duct of load plate 1 when guaranteeing the cutting completion;
C. cut silico briquette 3, promptly cut the duct 2 of load plate 1 and wear at 2 places, duct of the degree of depth in slit 4 to load plate 1 during cutting;
D. the silico briquette 3 that finishes cutting moves on in the prerinse groove, and load plate 1 is last during placement, and silicon chip is connected the duct 2 of load plate 1 down with water pipe;
E. the tube valve of fetching boiling water lets water get into the duct 2 of load plate 1, and under action of gravity, water is washed open because of the sticking mutually in twos silicon chip of mortar effect along under the slit flow of cutting open, makes its natural separation;
F. the silicon chip that cleaning is finished is sent into subsequent processing.
The said wire cutting machine of step b can be single line cutting machine and multi-line cutting machine, preferred multi-line cutting machine.The washing time of step e was generally about 10 minutes.
Use cleaning silicon chip of the present invention; The water of spray washes the whole silicon wafer surface from top to bottom from the both sides of silicon chip; Guaranteed the cleaning quality of silicon chip surface; Can promote A level article rate 1.5-2%, calculate by 25 yuan/sheet of every qualified product, the silicon chip manufacturer of 100MW production capacity can increase by 990,000 yuan one 132 ten thousand yuan of benefits every year.Adopt the present invention, silicon rod of every cleaning only needs 0.3 ton of running water, economizes on water 0.7 ton the silicon chip factory of 100MW production capacity, but 18000 tons of using water wisely in a year.By cleaning method in the past, need about 15 minutes, and adopt the present invention only to need to enhance productivity 33% on 10 minutes.
Certainly; The present invention also can have other various embodiments; Under the situation that does not deviate from spirit of the present invention and essence thereof; Those of ordinary skill in the art work as can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection range of the appended claim of invention.
Claims (9)
1. silicon wafer stripping cleaning method is characterized in that: may further comprise the steps:
A. silico briquette (3) is bonded on the load plate (1) of duct (2);
B. the silicon that is cured (3) is installed on the wire cutting machine, cutting zero point and depth of cut are set, steel wire was in the position, duct (2) of load plate (1) when cutting was accomplished;
C. cut silico briquette (3), the duct (2) of each degree of depth to load plate (1) is located during cutting;
D. the silico briquette that finishes cutting (3) moves on in the prerinse groove, and load plate during installation (1) is last, and silicon chip is connected the duct of load plate (2) with water pipe (5) down;
E. the tube valve of fetching boiling water lets water get into the duct (2) of load plate, and under action of gravity, water flows down along the slit of cutting open (4), washes open because of the sticking mutually in twos silicon chip of mortar effect, makes its natural separation;
F. the silicon chip that cleaning is finished is sent into subsequent processing.
2. silicon wafer stripping cleaning method according to claim 1 is characterized in that: the described wire cutting machine of said step b is a multi-line cutting machine.
3. silicon wafer stripping cleaning method according to claim 1 is characterized in that: said step e water washing time is 10 minutes.
4. the load plate that is used for the silicon wafer stripping cleaning according to claim 1, it is characterized in that: be distributed with duct (2) in the load plate (1), water pipe can be connected with duct (2).
5. the load plate that is used for the silicon wafer stripping cleaning according to claim 4, it is characterized in that: duct (2) cross-sectional area in the load plate (1) is 15-40mm
2, the spacing of duct (2) is 20-40mm.
6. the load plate that is used for the silicon wafer stripping cleaning according to claim 5, it is characterized in that: duct (2) cross-sectional area in the load plate (1) is 20mm
2, the spacing of duct (2) is 25mm.
7. according to claim 4 or the 5 described load plate that are used for the silicon wafer stripping cleaning; It is characterized in that: load plate (1) is divided into upper plate (11) and lower plate (12); Wherein on a plate groove is arranged; The connected mode of upper plate (11) and lower plate (12) is bonding, and the groove on the back plate that bonds together seals into duct (2).
8. the load plate that is used for the silicon wafer stripping cleaning according to claim 7, it is characterized in that: said groove is on lower plate (12).
9. the load plate that is used for the silicon wafer stripping cleaning according to claim 8, it is characterized in that: upper plate (11) and lower plate (12) are glass plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010568321 CN102486989B (en) | 2010-12-01 | 2010-12-01 | Method and loading plate for degumming cleaning silicon wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010568321 CN102486989B (en) | 2010-12-01 | 2010-12-01 | Method and loading plate for degumming cleaning silicon wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102486989A true CN102486989A (en) | 2012-06-06 |
| CN102486989B CN102486989B (en) | 2013-10-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010568321 Expired - Fee Related CN102486989B (en) | 2010-12-01 | 2010-12-01 | Method and loading plate for degumming cleaning silicon wafer |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107856210A (en) * | 2017-11-23 | 2018-03-30 | 江苏高照新能源发展有限公司 | Silicon wafer cut by diamond wire high-efficient energy-saving environment friendly resin plate and degumming process method |
| CN111015983A (en) * | 2019-12-12 | 2020-04-17 | 扬州荣德新能源科技有限公司 | Stick sticking mode for polycrystal cutting hollowed-out plastic board |
| CN111266660A (en) * | 2020-03-20 | 2020-06-12 | 台州市双辉机械设备有限公司 | VCM magnetic steel cutting method and bonding tool |
| CN112871813A (en) * | 2019-11-29 | 2021-06-01 | 隆基绿能科技股份有限公司 | Cleaning method and cleaning device for slicing machine |
| CN113510872A (en) * | 2021-08-04 | 2021-10-19 | 西安奕斯伟硅片技术有限公司 | Crystal bar wire cutting device and crystal bar wire cutting method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5922137A (en) * | 1996-06-29 | 1999-07-13 | Komatsu Electronic Metals Co., Ltd. | Method of producing a semiconductor wafer and a cleaning apparatus for the same |
| US6006736A (en) * | 1995-07-12 | 1999-12-28 | Memc Electronic Materials, Inc. | Method and apparatus for washing silicon ingot with water to remove particulate matter |
| JP2002305174A (en) * | 2001-04-06 | 2002-10-18 | Seiko Epson Corp | Method for cleaning semiconductor wafer |
| CN1404124A (en) * | 2001-08-30 | 2003-03-19 | 日本电气株式会社 | Chip support for protecting chip from breakdown by static electricity |
| CN101342535A (en) * | 2007-07-12 | 2009-01-14 | 深圳市科创数字显示技术有限公司 | Method for removing residual silicon fragment after silicon based plate cutting |
-
2010
- 2010-12-01 CN CN 201010568321 patent/CN102486989B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6006736A (en) * | 1995-07-12 | 1999-12-28 | Memc Electronic Materials, Inc. | Method and apparatus for washing silicon ingot with water to remove particulate matter |
| US5922137A (en) * | 1996-06-29 | 1999-07-13 | Komatsu Electronic Metals Co., Ltd. | Method of producing a semiconductor wafer and a cleaning apparatus for the same |
| JP2002305174A (en) * | 2001-04-06 | 2002-10-18 | Seiko Epson Corp | Method for cleaning semiconductor wafer |
| CN1404124A (en) * | 2001-08-30 | 2003-03-19 | 日本电气株式会社 | Chip support for protecting chip from breakdown by static electricity |
| CN101342535A (en) * | 2007-07-12 | 2009-01-14 | 深圳市科创数字显示技术有限公司 | Method for removing residual silicon fragment after silicon based plate cutting |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107856210A (en) * | 2017-11-23 | 2018-03-30 | 江苏高照新能源发展有限公司 | Silicon wafer cut by diamond wire high-efficient energy-saving environment friendly resin plate and degumming process method |
| CN112871813A (en) * | 2019-11-29 | 2021-06-01 | 隆基绿能科技股份有限公司 | Cleaning method and cleaning device for slicing machine |
| CN111015983A (en) * | 2019-12-12 | 2020-04-17 | 扬州荣德新能源科技有限公司 | Stick sticking mode for polycrystal cutting hollowed-out plastic board |
| CN111266660A (en) * | 2020-03-20 | 2020-06-12 | 台州市双辉机械设备有限公司 | VCM magnetic steel cutting method and bonding tool |
| CN113510872A (en) * | 2021-08-04 | 2021-10-19 | 西安奕斯伟硅片技术有限公司 | Crystal bar wire cutting device and crystal bar wire cutting method |
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| Publication number | Publication date |
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| CN102486989B (en) | 2013-10-23 |
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Granted publication date: 20131023 Termination date: 20171201 |