CN102486988A - Vacuum transmission process equipment - Google Patents
Vacuum transmission process equipment Download PDFInfo
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- CN102486988A CN102486988A CN2010105721573A CN201010572157A CN102486988A CN 102486988 A CN102486988 A CN 102486988A CN 2010105721573 A CN2010105721573 A CN 2010105721573A CN 201010572157 A CN201010572157 A CN 201010572157A CN 102486988 A CN102486988 A CN 102486988A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses vacuum transmission process equipment. The vacuum transmission process equipment comprises a vacuum process cavity, at least one workpiece feeding cavity, at least one workpiece discharging cavity and at least one transmission platform, wherein the transmission platform is used for bearing a workpiece to move from the workpiece feeding cavity to the workpiece discharging cavity by the vacuum process cavity; the two sides of the transmission platform in the vacuum process cavity are respectively provided with at least one processing device; the transmission platform is a hollow bracket; a processing medium of the processing device positioned at one side of the transmission platform can penetrate through the hollow bracket to carry out processing on one surface of a workpiece born by the transmission platform; and a processing medium of the processing device positioned at the other side of the transmission platform can penetrate through the hollow bracket to carry out processing on the other surface of the workpiece born by the transmission platform. According to the vacuum transmission process equipment disclosed by the invention, the production efficiency is extremely high and the equipment cost is lower.
Description
Technical field
The present invention relates to the vacuum process field, particularly relate to a kind of vacuum transmission process apparatus.
Background technology
New forms of energy are one of five big technical fields of tool decision power in the 21st century development of world economy, wherein, solar energy be a kind of cleaning, efficiently, the new forms of energy of depletion never.In the new century, national governments are all with the important content of solar energy resources utilization as national sustainable development strategy, that photovoltaic generation has is safe and reliable, noiseless, pollution-free, restriction less, plurality of advantages such as low, the easy maintenance of failure rate.In recent years, photovoltaic power generation technology has obtained fast development in the world, and the production capacity that therefore improves solar wafer has become very important problem.
Solar wafer is processed as solar cell need passes through a plurality of manufacturing process, and many need in vacuum environment, the completion arranged in these a plurality of manufacturing process, for example P type ion implantation process, N type ion implantation process and annealing in process processing procedure or the like.In the solar cell manufacturing technology that widely adopts at present, in each vacuum process chamber, only carry out a single processing procedure usually, for example the transmission of the vacuum described in the U.S. Pat 20080038908 manufacturing method thereof; Perhaps, in each vacuum process chamber, carry out a few different processing procedures continuously, and in this a few different processing procedures, all be arranged at the same side that is used to carry and transmit the transmission platform of solar wafer with the corresponding processing unit (plant) of each processing procedure.
Exist following defectives in the above-mentioned solar cell manufacturing technology: one; Solar wafer need repeatedly pass in and out vacuum between a plurality of vacuum process chamber can accomplish processing; And the action that repeatedly passes in and out vacuum not only can reduce the working (machining) efficiency of solar wafer, also can reduce yield of products because of processing step increases; Two, in each vacuum process chamber, be merely able to accomplish processing to a surface of solar wafer, this will further reduce the working (machining) efficiency of solar wafer; Three, need to buy the vacuum transmission process apparatus that many covers are used to carry out different processing procedures, production cost is higher.
Summary of the invention
The technical problem that the present invention will solve is in order to overcome the defective that vacuum transmission process apparatus working (machining) efficiency is lower and cost is higher of solar wafer of the prior art, provides a kind of working (machining) efficiency high and vacuum transmission process apparatus that equipment cost is lower.
The present invention solves above-mentioned technical problem through following technical proposals: a kind of vacuum transmission process apparatus; It comprises a vacuum process chamber, at least one enters the part chamber, at least one goes out part chamber and at least one transmission platform; This transmission platform is used to carry workpiece and enters the part chamber from this and move to this through this vacuum process chamber and go out the part chamber; Its characteristics are; Be respectively equipped with at least one processing unit (plant) in the both sides of this transmission platform in this vacuum process chamber; This transmission platform is a hollow stent, and the machining medium that is positioned at this processing unit (plant) of this transmission platform one side can pass this hollow stent a surface of the workpiece that this transmission platform carried is processed, and the machining medium that is positioned at this processing unit (plant) of this transmission platform opposite side can pass this hollow stent another surface of the workpiece that this transmission platform carried is processed.
Preferably, the quantity of this transmission platform is at least two, and these at least two transmission platforms are moving on the same plane or at least two planes, moving.
Preferably, these at least two transmission platforms successively move through the zone of action of the machining medium of this processing unit (plant) each other.
Preferably, this workpiece is a solar wafer.
Preferably, this processing unit (plant) is ion implantation apparatus, plasma injection device, annealing device or annealing in process device.
Preferably, this ion implantation apparatus is P type ion implantation apparatus or N type ion implantation apparatus.
Preferably, be positioned at the zone of action non-overlapping of machining medium of this processing unit (plant) of the not homonymy of this transmission platform.
Preferably, at least one side of this transmission platform is provided with two these processing unit (plant)s, and it is identical or inequality to be positioned at this two processing unit (plant)s of the same side of this transmission platform.
Preferably, at least one side of this transmission platform is provided with at least three these processing unit (plant)s, and it is identical or inequality fully to be positioned at this at least three processing unit (plant) parts of this transmission platform the same side.
Preferably, a side of this transmission platform is provided with this processing unit (plant), and this processing unit (plant) is a P type ion implantation apparatus; The opposite side of this transmission platform is provided with this processing unit (plant), and this processing unit (plant) is a N type ion implantation apparatus.
Preferably, a side of this transmission platform is provided with two these processing unit (plant)s, and these two processing unit (plant)s are P type ion implantation apparatus; The opposite side of this transmission platform is provided with this processing unit (plant), and this processing unit (plant) is a N type ion implantation apparatus; Also be provided with a mask plate control device in this vacuum process chamber, be used for first being processed that workpiece receives one of them P type ion implantation apparatus to workpiece towards placing mask plate on the surface of P type ion implantation apparatus and being used for that the surface towards P type ion implantation apparatus from workpiece removes mask plate after workpiece receives the processing of this one of them P type ion implantation apparatus.
Preferably, along the moving direction of this transmission platform, this one of them P type ion implantation apparatus, this N type ion implantation apparatus, another P type ion implantation apparatus set gradually.
Preferably, a side of this transmission platform is provided with two these processing unit (plant)s, and these two processing unit (plant)s are N type ion implantation apparatus; The opposite side of this transmission platform is provided with this processing unit (plant), and this processing unit (plant) is a P type ion implantation apparatus; Also be provided with a mask plate control device in this vacuum process chamber, be used for first being processed that workpiece receives one of them N type ion implantation apparatus to workpiece towards placing mask plate on the surface of N type ion implantation apparatus and being used for that the surface towards N type ion implantation apparatus from workpiece removes mask plate after workpiece receives the processing of this one of them N type ion implantation apparatus.
Preferably, along the moving direction of this transmission platform, this one of them N type ion implantation apparatus, this P type ion implantation apparatus, another N type ion implantation apparatus set gradually.
Preferably, along the moving direction of this transmission platform, last this processing unit (plant) is that an annealing in process device, all the other these processing unit (plant)s are ion implantation apparatus.
Positive progressive effect of the present invention is: in this vacuum transmission process apparatus of the present invention; In the vacuum process chamber, not only be designed with a plurality of processing unit (plant)s; And those processing unit (plant)s lay respectively at the both sides that are used to carry and transmit the transmission platform of workpiece; Workpiece only need once pass in and out the action of vacuum thus, just can accomplish a plurality of manufacturing process to its two surfaces once, even accomplishes the whole procedure for processing to workpiece once; Production efficiency is high, has also saved simultaneously and has purchased the cost that the different vacuum transmission process apparatus of many covers is wasted.
Description of drawings
Fig. 1-4 is the sketch map of four kinds of example structure of this vacuum transmission process apparatus of the present invention.
Fig. 5 is the structure chart that is transmitted the prepared solar cell of process apparatus by Fig. 1 or this vacuum shown in Figure 2.
Fig. 6 is the structure chart that is transmitted the prepared solar cell of process apparatus by Fig. 3 or this vacuum shown in Figure 4.
Embodiment
Provide preferred embodiment of the present invention below in conjunction with accompanying drawing, to specify technical scheme of the present invention.
With reference to figure 1-4, this vacuum transmission process apparatus of the present invention comprises a vacuum process chamber 1, at least one enters part chamber 2, at least one goes out part chamber 3 and at least one transmission platform 4.
This enters part chamber 2 and goes out the two ends that this vacuum process chamber 1 is located in part chamber 3 respectively with this.This advance part chamber 2 with this go out part chamber 3 all can for volume compared to this vacuum process chamber 1 less vacuum box; Each this vacuum box all has two sealed valves; A sealed valve is used for partition/connection, and this enters part chamber 2 (maybe this goes out part chamber 3) and this vacuum process chamber 1, and another sealed valve then is used for partition/connection, and this advances part chamber 2 (maybe this goes out part chamber 3) and atmospheric environment.Those vacuum boxs can be pumped to vacuum state from atmospheric condition apace; Or be inflated to atmospheric condition from vacuum state; Therefore workpiece 5 can transmit between atmospheric environment and this vacuum process chamber 1 through them apace, and does not influence the vacuum degree in this vacuum process chamber 1.Only schematically drawn among Fig. 1-4 one this advance part chamber 2 and one this go out part chamber 3, but their quantity all can be more than one.
Be provided with workpiece to be processed laydown area 6 near this enters part chamber 2 the atmospheric environment; Mechanical arm 7 can be passed to workpiece to be processed on this transmission platform 4; Then this transmission platform 4 is just carrying workpiece and enters part chamber 2 from this and get into these vacuum process chambeies 1; And in this vacuum process chamber 1, accomplish workpiece and process; This transmission platform 4 is carrying workpiece and 1 gets into this and go out part chamber 3 from this vacuum process chamber then, and mechanical arm 8 can be passed to the finished work on this transmission platform 4 to be located at this and to go out the finished work laydown area 9 near the atmospheric environment the part chamber 3.
Especially, in this vacuum process chamber 1 and in the both sides of this transmission platform 4, be respectively equipped with at least one processing unit (plant), processing unit (plant) 10a, the 10b among Fig. 1 and Fig. 2 for example, and processing unit (plant) 10a, 10b, 10c among Fig. 3 and Fig. 4.
This transmission platform 4 among the present invention is a hollow stent, and the machining medium of each processing unit (plant) can pass this hollow stent from the both sides of this hollow stent, but can be stopped by workpiece.Therefore; When carrying workpiece on this transmission platform 4; The surface (for example upper surface) that the machining medium that is positioned at this processing unit (plant) of these transmission platform 4 one sides (for example upside) can pass the workpiece that this hollow stent carried this transmission platform 4 processes, and processes and the machining medium that is positioned at this processing unit (plant) of these transmission platform 4 opposite sides (for example downside) can pass another surface (for example lower surface) of the workpiece that this hollow stent carried this transmission platform 4.Wherein, the zone of action of the machining medium of each processing unit (plant) is represented with elliptical region in Fig. 1-4.
Go out the 3 turnover spent times of vacuum of part chamber with this and all will become non-productive work time of each processing unit (plant) because the load/unload of workpiece and workpiece enter part chamber 2 through this; Therefore in order to improve working (machining) efficiency, can the quantity of this transmission platform 4 be designed at least two.So, when one of them transmission platform is just carrying the man-hour that adds that workpiece is accepted each processing unit (plant), remaining transmission platform just can make the best use of time to accomplish the load/unload of workpiece and the action of workpiece turnover vacuum.Under the situation of the best; With reference to figure 2 and shown in Figure 4; Each transmission platform can be each other the zone of action of the machining medium through each processing unit (plant) successively, promptly previous transmission platform just leaves the zone of action of the machining medium that has got into this same processing unit (plant) that a then back transmission platform has just followed closely from the zone of action of the machining medium of a processing unit (plant); Thereby make each processing unit (plant) effectively to move all the time, improve working (machining) efficiency.
When the quantity of this transmission platform 4 during more than one, both can those transmission platforms be designed on same plane, move, also can those transmission platforms be designed on different plane, move.Fig. 1 and shown in Figure 3 is first kind of situation, and those transmission platforms move on identical height, can avoid accepting processing at the different plane place because of different workpiece like this and cause their processing stage inconsistent.And Fig. 2 and shown in Figure 4 is second kind of situation; These transmission platforms move at various height to be gone up; So just, can hold more transmission platform and locate to carry out simultaneously the load/unload of workpiece and the action of workpiece turnover vacuum at various height, improve operational efficiency.
In the present invention; This processing unit (plant) can be all kinds; For example ion implantation apparatus, plasma injection device, annealing device or annealing in process device or the like can comprise P type ion implantation apparatus and N type ion implantation apparatus or the like again in various ion implantation apparatuses.This shows,, obviously also go for the manufacturing process of other multiple semiconductor product though the present invention is specially adapted to this workpiece kind of solar wafer.
In addition; On the moving direction of this transmission platform 4; Preferably will be positioned at this transmission platform 4 not the design attitude of each processing unit (plant) of homonymy stagger each other; The zone of action with the machining medium of avoiding them is overlapped, prevents to cause harmful effect because of two surfaces to workpiece process simultaneously in some cases.
The present invention does not all limit type, number (both sides that need satisfy this transmission platform 4 are respectively equipped with at least one processing unit (plant)) and the design sequence of each processing unit (plant) on the moving direction of this transmission platform 4 of the processing unit (plant) of these transmission platform 4 both sides.In actual production, should require the above-mentioned type, number and sequential scheduling parameter are carried out suitable design to the concrete kind and the concrete processing procedure of workpiece.
Procedure for processing to two surfaces of workpiece is separate, thus this transmission platform 4 type, number and the order of the processing unit (plant) of homonymy certainly maybe be identical also maybe be different.But even each processing unit (plant) of these transmission platform 4 the same sides, their type also can be identical or different.For example; When the same side of this transmission platform 4 is provided with two processing unit (plant)s; These two processing unit (plant)s both can be carried out different processing procedures; Also can carry out identical processing procedure, be P type ion implantation apparatus such as the both, same workpiece carried out twice injection can satisfy preset implantation concentration requirement.Again for example, when the same side of this transmission platform 4 was provided with at least three these processing unit (plant)s, these several processing unit (plant)s both can be carried out different processing procedures separately, also can have the part processing unit (plant) to carry out identical processing procedure.
Shown in Figure 5 is to use the most general a kind of solar battery structure at present; The solar cell of this type both can make on the basis of N type wafer; Also can on the basis of P type wafer, make, and the solar cell that on the basis of N type wafer, makes that is shown in Figure 5.
Can know with reference to figure 5; In the manufacturing process of the solar cell of this type; Injection doping step to whole N type solar wafer specifically comprises two different processing procedures; That is: the even dopping process that adopts P type ion pair wafer frontside to carry out, and the even dopping process that adopts N type ion pair wafer rear to carry out.Such injection doping step just can adopt this vacuum transmission process apparatus of Fig. 1 for example or Fig. 2 to accomplish; At this moment; Processing unit (plant) 10a among the figure just can be a P type ion implantation apparatus; Processing unit (plant) 10b just can be a N type ion implantation apparatus, and the zone of action of the machining medium of these two processing unit (plant)s with the perpendicular direction of the moving direction of this transmission platform 4 on all cover wafer size fully.After this transmission platform 4 was carrying solar wafer and moves through the ionization zone of this processing unit (plant) 10a, the P type ion of just having accomplished wafer frontside evenly mixed, and has formed the positive P utmost point.After this transmission platform 4 continued to move through the ionization zone of this processing unit (plant) 10b, the N type ion of just having accomplished wafer rear evenly mixed, and has formed the N+ utmost point at the back side.Certainly, along the moving direction of this transmission platform 4, the design sequence of this processing unit (plant) 10a and this processing unit (plant) 10b also can exchange.
Because to those skilled in the art; With N type wafer is the technology and the technology all fours that serves as the solar cell of this type of basis manufacturing of the solar cell of this type of basis manufacturing with P type wafer; So only the situation that adopts N type wafer is specified in the present embodiment, do not state and the situation that adopts P type wafer omitted.
In the present embodiment, solar wafer only need pass in and out vacuum one time, just can accomplish the dopping process of front and back once.The technology of one cover vacuum transmission process apparatus respectively is set compared to the dopping process for the dopping process in front and the back side; The obvious working (machining) efficiency of this vacuum transmission process apparatus in the present embodiment is higher; Equipment cost is lower; And have benefited from the simplification of processing step, the yields of the solar cell that makes also will obtain to improve.
Embodiment 2
Shown in Figure 6 is present existing a kind of solar battery structure that adopts selective emitter; The solar cell of this type both can make on the basis of N type wafer; Also can on the basis of P type wafer, make, and the solar cell that on the basis of N type wafer, makes that is shown in Figure 6.
Can know with reference to figure 6; In the manufacturing process of the solar cell of this type; Injection doping step to whole N type solar wafer specifically comprises three different processing procedures; That is: adopt the selectivity heavy doping processing procedure that P type ion pair wafer frontside carries out, the even dopping process that adopts P type ion pair wafer frontside to carry out and the even dopping process that adopts N type ion pair wafer rear to carry out.Consider that solar wafer injects to add and man-hour temperature rise can take place accepting ion; And in above-mentioned three processing procedures; Total injecting power of selectivity heavy doping processing procedure is relatively low; Therefore preferable design is: carry out the selectivity heavy doping to wafer frontside earlier, carry out the even doping to wafer rear then, carry out the even doping to wafer frontside at last again.
Such injection doping step just can adopt this vacuum transmission process apparatus of Fig. 3 for example or Fig. 4 to accomplish; At this moment; Processing unit (plant) 10a among the figure just can be a P type ion implantation apparatus; Processing unit (plant) 10b just can be a N type ion implantation apparatus, and processing unit (plant) 10c then still can be a P type ion implantation apparatus, and the zone of action of the machining medium of these three processing unit (plant)s with the perpendicular direction of the moving direction of this transmission platform 4 on all cover wafer size fully.In addition, in order to realize selectivity heavy doping processing procedure, a mask plate control device need be set also in this vacuum process chamber 1.
Carrying at this transmission platform 4 before the ionization zone of this processing unit (plant) of wafer entering 10a; This mask plate control device is placed mask plate 11 to the place of each wafer frontside; After this transmission platform 4 moves through the ionization zone of this processing unit (plant) 10a; The selective doping of P type ion has just been accomplished in the zone that is not hidden by this mask plate 11 on each wafer frontside, and after this this mask plate control device can remove this mask plate 11 of each wafer frontside.After this transmission platform 4 continued to move through the ionization zone of this processing unit (plant) 10b, the N type ion of just having accomplished wafer rear evenly mixed, and has formed the N+ utmost point at the back side.After this transmission platform 4 continues to move through the ionization zone of this processing unit (plant) 10c; Just the P type ion of having accomplished wafer frontside evenly mixes; So far the P type ion selectivity of not only accepting in wafer frontside mixes but also accepted just to have formed the heavy doping P+ utmost point in the even doped regions of P type ion, and in the even doped regions of the P type of only accepting ion of wafer frontside, has just formed the P utmost point.
Because to those skilled in the art; With N type wafer is the technology and the technology all fours that serves as the solar cell of this type of basis manufacturing of the solar cell of this type of basis manufacturing with P type wafer; Only need the machining medium of this processing unit (plant) 10a, 10b, 10c be exchanged between N type ion and P type ion and get final product; So only the situation that adopts N type wafer is specified in the present embodiment, do not state and the situation that adopts P type wafer omitted.
In the present embodiment, solar wafer only need pass in and out vacuum one time, just can accomplish positive heavy doping, the even doping in front and the even dopping process at the back side once.Compared to the technology that a cover vacuum transmission process apparatus is set respectively for each dopping process; The obvious working (machining) efficiency of this vacuum transmission process apparatus in the present embodiment is higher; Equipment cost is lower, and has benefited from the simplification of processing step, and the yields of the solar cell that makes will be higher also.
In addition; In the various possible execution mode of this vacuum transmission process apparatus of the present invention; For example in embodiment 1 and embodiment 2 described these two kinds of execution modes; All can on the moving direction of this transmission platform 4 and be useful on the processing unit (plant) of carrying out ion implantation process after, set up the processing unit (plant) of an annealing in process type of device again.So; After the various ion implantation process of having accomplished workpiece, just can carry out annealing in process to workpiece immediately, thereby workpiece only need pass in and out vacuum one time; Just can accomplish dopping process and annealing process once; This will improve the production efficiency of workpiece further, reduce equipment cost, and improve the yields that makes workpiece further.
Though more than described embodiment of the present invention, it will be understood by those of skill in the art that these only illustrate, protection scope of the present invention is limited appended claims.Those skilled in the art can make numerous variations or modification to these execution modes under the prerequisite that does not deviate from principle of the present invention and essence, but these changes and modification all fall into protection scope of the present invention.
Claims (15)
1. a vacuum is transmitted process apparatus; It comprises a vacuum process chamber, at least one enters the part chamber, at least one goes out part chamber and at least one transmission platform; This transmission platform is used to carry workpiece and enters the part chamber from this and move to this through this vacuum process chamber and go out the part chamber, it is characterized in that
Be respectively equipped with at least one processing unit (plant) in the both sides of this transmission platform in this vacuum process chamber; This transmission platform is a hollow stent; The machining medium that is positioned at this processing unit (plant) of this transmission platform one side can pass this hollow stent a surface of the workpiece that this transmission platform carried is processed, and the machining medium that is positioned at this processing unit (plant) of this transmission platform opposite side can pass this hollow stent another surface of the workpiece that this transmission platform carried is processed.
2. vacuum transmission process apparatus as claimed in claim 1 is characterized in that the quantity of this transmission platform is at least two, and these at least two transmission platforms are moving on the same plane or at least two planes, moving.
3. vacuum transmission process apparatus as claimed in claim 2 is characterized in that these at least two transmission platforms successively move through the zone of action of the machining medium of this processing unit (plant) each other.
4. vacuum transmission process apparatus as claimed in claim 3 is characterized in that this workpiece is a solar wafer.
5. vacuum transmission process apparatus as claimed in claim 3 is characterized in that this processing unit (plant) is ion implantation apparatus, plasma injection device, annealing device or annealing in process device.
6. vacuum transmission process apparatus as claimed in claim 5 is characterized in that this ion implantation apparatus is P type ion implantation apparatus or N type ion implantation apparatus.
7. like any described vacuum transmission process apparatus among the claim 1-6, it is characterized in that, be positioned at the zone of action non-overlapping of machining medium of this processing unit (plant) of the not homonymy of this transmission platform.
8. vacuum as claimed in claim 7 transmission process apparatus is characterized in that at least one side of this transmission platform is provided with two these processing unit (plant)s, and it is identical or inequality to be positioned at this two processing unit (plant)s of the same side of this transmission platform.
9. vacuum as claimed in claim 7 transmission process apparatus is characterized in that at least one side of this transmission platform is provided with at least three these processing unit (plant)s, and it is identical or inequality fully to be positioned at this at least three processing unit (plant) parts of this transmission platform the same side.
10. vacuum transmission process apparatus as claimed in claim 7 is characterized in that a side of this transmission platform is provided with this processing unit (plant), and this processing unit (plant) is a P type ion implantation apparatus; The opposite side of this transmission platform is provided with this processing unit (plant), and this processing unit (plant) is a N type ion implantation apparatus.
11. vacuum transmission process apparatus as claimed in claim 7 is characterized in that a side of this transmission platform is provided with two these processing unit (plant)s, these two processing unit (plant)s are P type ion implantation apparatus; The opposite side of this transmission platform is provided with this processing unit (plant), and this processing unit (plant) is a N type ion implantation apparatus; Also be provided with a mask plate control device in this vacuum process chamber, be used for first being processed that workpiece receives one of them P type ion implantation apparatus to workpiece towards placing mask plate on the surface of P type ion implantation apparatus and being used for that the surface towards P type ion implantation apparatus from workpiece removes mask plate after workpiece receives the processing of this one of them P type ion implantation apparatus.
12. vacuum transmission process apparatus as claimed in claim 11 is characterized in that along the moving direction of this transmission platform, this one of them P type ion implantation apparatus, this N type ion implantation apparatus, another P type ion implantation apparatus set gradually.
13. vacuum transmission process apparatus as claimed in claim 7 is characterized in that a side of this transmission platform is provided with two these processing unit (plant)s, these two processing unit (plant)s are N type ion implantation apparatus; The opposite side of this transmission platform is provided with this processing unit (plant), and this processing unit (plant) is a P type ion implantation apparatus; Also be provided with a mask plate control device in this vacuum process chamber, be used for first being processed that workpiece receives one of them N type ion implantation apparatus to workpiece towards placing mask plate on the surface of N type ion implantation apparatus and being used for that the surface towards N type ion implantation apparatus from workpiece removes mask plate after workpiece receives the processing of this one of them N type ion implantation apparatus.
14. vacuum transmission process apparatus as claimed in claim 13 is characterized in that along the moving direction of this transmission platform, this one of them N type ion implantation apparatus, this P type ion implantation apparatus, another N type ion implantation apparatus set gradually.
15. vacuum transmission process apparatus as claimed in claim 7 is characterized in that along the moving direction of this transmission platform, last this processing unit (plant) is that an annealing in process device, all the other these processing unit (plant)s are ion implantation apparatus.
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| CN2010105721573A CN102486988A (en) | 2010-12-03 | 2010-12-03 | Vacuum transmission process equipment |
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| CN2010105721573A CN102486988A (en) | 2010-12-03 | 2010-12-03 | Vacuum transmission process equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2015196399A1 (en) * | 2014-06-26 | 2015-12-30 | 上海凯世通半导体有限公司 | Ion implantation device |
| CN110993615A (en) * | 2019-11-28 | 2020-04-10 | 信利(仁寿)高端显示科技有限公司 | Ion implantation method and manufacturing method of TFT substrate |
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| CN101770932A (en) * | 2009-01-04 | 2010-07-07 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma process equipment |
| CN101882565A (en) * | 2010-06-03 | 2010-11-10 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Online processing equipment |
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| CN101174098A (en) * | 2006-10-30 | 2008-05-07 | 应用材料股份有限公司 | Workpiece rotation apparatus for a plasma reactor system |
| CN101770932A (en) * | 2009-01-04 | 2010-07-07 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma process equipment |
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| WO2015196399A1 (en) * | 2014-06-26 | 2015-12-30 | 上海凯世通半导体有限公司 | Ion implantation device |
| CN106233422A (en) * | 2014-06-26 | 2016-12-14 | 上海凯世通半导体股份有限公司 | Ion implantation device |
| CN110993615A (en) * | 2019-11-28 | 2020-04-10 | 信利(仁寿)高端显示科技有限公司 | Ion implantation method and manufacturing method of TFT substrate |
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Application publication date: 20120606 |