CN102479920A - Manufacture method of nanometer annular magnetic tunnel structure and manufacture method of magnetic resistance internal memory - Google Patents
Manufacture method of nanometer annular magnetic tunnel structure and manufacture method of magnetic resistance internal memory Download PDFInfo
- Publication number
- CN102479920A CN102479920A CN201010568181XA CN201010568181A CN102479920A CN 102479920 A CN102479920 A CN 102479920A CN 201010568181X A CN201010568181X A CN 201010568181XA CN 201010568181 A CN201010568181 A CN 201010568181A CN 102479920 A CN102479920 A CN 102479920A
- Authority
- CN
- China
- Prior art keywords
- hard mask
- junction
- magnetic tunnel
- cylindric
- cylindric hard
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention relates to a manufacture method of a nanometer annular magnetic tunnel structure and a manufacture method of a magnetic resistance internal memory. The method comprises the following steps that: a magnetic tunnel structure is provided, and a first cylindrical hard mask with the diameter being the first dimension is formed on the tunnel structure; the first cylindrical hard mask is used as a mark for etching the magnetic tunnel structure, and a cylindrical magnetic tunnel joint is formed; the first cylindrical hard mask is subjected to the trimming treatment in the radial direction, a second cylindrical hard mask with the diameter being a second dimension is formed, and an annular magnetic tunnel joint is exposed through the second cylindrical hard mask; medium materials are deposited on the magnetic tunnel joint exposed through the second cylindrical hard mask, and a first medium layer is formed; the second cylindrical hard mask is removed, and an opening circulated by the first medium layer and the magnetic tunnel joint is formed; the magnetic tunnel joint exposed by the opening is removed until a through hole penetrating through the magnetic tunnel joint is formed, medium materials are deposited in the through hole, and a second medium layer filled in the through hole is formed. The process in the method can be realized on the existing industrial line, and the mass production can be realized.
Description
Technical field
The present invention relates to field of semiconductor manufacture, relate in particular to the manufacturing approach of the ring-like magnetic tunnel-junction of a kind of nanometer, the manufacturing approach of magnetic resistance internal memory.
Background technology
(Magnetic Random Access Memory MRAM) owing to have high speed, low-voltage, high density, advantage such as non-volatile, becomes one of memory of market concern to the magnetic resistance internal memory.
MRAM is through applying magnetic field, and (Magnetic TunnelJunction is MTJ) in the structure, and through measuring the technology of the information that reads through the electric current of MTJ to magnetic tunnel-junction with information stores.Particularly, said MTJ is made up of two ferromagnetic layers and the insulating barrier between said two ferromagnetic layers.A kind of mtj structure that is used for storage device is just disclosed in notification number is the Chinese patent of CN 1402254C.
Along with the development of MTJ technology, the ring-like magnetic tunnel-junction of a kind of nanometer has been developed in this area, and (NR-MTJ has advantages such as the magnetic of reducing noise and increase memory capacity for Nano-ring-type Magnetic Tunnel Junction, NR-MTJ) structure.In conjunction with reference to figure 1 with reference to figure 2; Show the schematic perspective view and the schematic top plan view of the ring-like magnetic tunnel-junction of nanometer in the prior art respectively; The ring-like magnetic tunnel-junction of said nanometer is a multi-layer film structure; Particularly; By down and on comprise first ferromagnetic layer 101, insulating barrier 102, second ferromagnetic layer 103 successively, said multi-layer film structure also comprises the through hole that runs through said first ferromagnetic layer 101, insulating barrier 102, second ferromagnetic layer 103, is filled with columned dielectric layer in the said through hole; Said first ferromagnetic layer 101, insulating barrier 102, second ferromagnetic layer 103 are circular ring type, and the radial dimension of each layer of the ring-like magnetic tunnel-junction of said nanometer is all in the scope of nanometer scale (for example 25nm).
In the prior art, adopt usually electron beam (Electron Beam Lithography, EBL) photoetching or ar-ion beam etching method are made NR-MTJ, yet said method is not adapted at industry and produces in the line and produce in a large number.
Summary of the invention
The problem that the present invention solves provides a kind of manufacturing approach that is suitable for the ring-like magnetic tunnel-junction of nanometer of volume production.
For addressing the above problem, the present invention provides the manufacturing approach of the ring-like magnetic tunnel-junction of a kind of nanometer, comprises, magnetic tunnel-junction is provided; On said tunnel junction, forming diameter is the first cylindric hard mask of first size; With the said first cylindric hard mask is the said magnetic tunnel-junction of mask etching, forms cylindric magnetic tunnel-junction; From radially the said first cylindric hard mask being repaired processing, forming diameter is the second cylindric hard mask of second size, and the said second cylindric hard mask exposes the magnetic tunnel-junction of circular ring type; Deposition medium material on the magnetic tunnel-junction that the said second cylindric hard mask exposes forms first dielectric layer; Remove the said second cylindric hard mask, form the opening that surrounds by said first dielectric layer and magnetic tunnel-junction; Remove magnetic tunnel-junction that said opening exposes and run through the through hole of said magnetic tunnel-junction until formation, deposition medium material in said through hole forms and is filled in second dielectric layer in the said through hole.
Correspondingly, the present invention also provides a kind of manufacturing approach of magnetic resistance internal memory, comprising: on substrate, form first electrode; On first electrode, form magnetic tunnel-junction; On said tunnel junction, forming diameter is the first cylindric hard mask of first size; With the said first cylindric hard mask is the said magnetic tunnel-junction of mask etching, forms cylindric magnetic tunnel-junction; From radially the said first cylindric hard mask being repaired processing, forming diameter is the second cylindric hard mask of second size, and the said second cylindric hard mask exposes the magnetic tunnel-junction of circular ring type; Deposition medium material on the magnetic tunnel-junction that the said second cylindric hard mask exposes forms first dielectric layer; Remove the said second cylindric hard mask, form the opening that surrounds by said first dielectric layer and magnetic tunnel-junction; Remove magnetic tunnel-junction that said opening exposes and run through the through hole of said magnetic tunnel-junction until formation, deposition medium material in said through hole forms and is filled in second dielectric layer in the said through hole; On said second dielectric layer, form and be covered in second electrode on the said magnetic tunnel-junction.
Compared with prior art, the present invention has the following advantages: the process that manufacturing approach adopted of the ring-like magnetic tunnel-junction of said nanometer all can realize on existing industry line, can produce in a large number.
Description of drawings
Fig. 1 is the schematic perspective view of the ring-like magnetic tunnel-junction of prior art nanometer;
Fig. 2 is the schematic top plan view of the ring-like magnetic tunnel-junction of nanometer shown in Figure 1;
Fig. 3 is the schematic flow sheet of manufacturing approach one execution mode of magnetic tunnel-junction of the present invention;
Fig. 4 to Figure 12 is the side structure sketch map of magnetic tunnel-junction one embodiment that becomes of the manufacturing approach type of magnetic tunnel-junction of the present invention.
Embodiment
For make above-mentioned purpose of the present invention, feature and advantage can be more obviously understandable, does detailed explanation below in conjunction with the accompanying drawing specific embodiments of the invention.
Set forth a lot of details in the following description so that make much of the present invention, implement but the present invention can also adopt other to be different from alternate manner described here, so the present invention has not received the restriction of following disclosed specific embodiment.
Said as background technology, adopt electron beam lithography or ar-ion beam etching method when making the ring-like magnetic tunnel-junction of nanometer in the prior art, manufacturing approach can not be produced on the line in existing industry and made on a large scale in this, can't carry out volume production.
To the problems referred to above; Inventor of the present invention provides the manufacturing approach of the ring-like magnetic tunnel-junction of a kind of nanometer; Be used to make the ring-like magnetic tunnel-junction of nanometer, the manufacturing approach of magnetic tunnel-junction of the present invention all adopts industry to produce photoetching and engraving method commonly used on the line, is convenient to carry out volume production.
With reference to figure 3, show the schematic flow sheet of manufacturing approach one execution mode of magnetic tunnel-junction of the present invention,, in the present embodiment, said magnetic tunnel-junction is applied in the magnetic resistance internal memory, and said manufacturing approach may further comprise the steps:
Step S1 forms first electrode, magnetic tunnel-junction successively on substrate;
Step S2 forms the first cylindric hard mask on said magnetic tunnel-junction;
Step S3 is the said magnetic tunnel-junction of mask graphization with the said first cylindric hard mask, forms cylindric magnetic tunnel-junction;
Step S4 repairs processing to the said first cylindric hard mask, forms the second cylindric hard mask;
Step S5 at deposition medium material on the magnetic tunnel-junction that the second cylindric hard mask exposes and on first electrode that exposes of magnetic tunnel-junction, forms first dielectric layer;
Step S6 removes the said second cylindric hard mask, forms the opening that first dielectric layer and magnetic tunnel-junction surround;
Step S7 removes the magnetic tunnel-junction that said opening exposes, and until exposing first electrode, forms the through hole that runs through said magnetic tunnel-junction;
Step S8 to said through hole deposition medium material, forms second dielectric layer, on said magnetic tunnel-junction, forms second electrode.
Below in conjunction with accompanying drawing each step is elaborated.
Execution in step S1, as shown in Figure 4, said substrate can be monocrystalline silicon or SiGe; Also can be silicon-on-insulator (Silicon on insulator, SOI);
The step that on said substrate, forms first electrode comprises: on substrate, form interlayer dielectric layer 201; Graphical said interlayer dielectric layer 201 forms the through hole that runs through said interlayer dielectric layer 201; Deposits conductive material in said through hole; Until filling up said through hole; Thereby accomplish the manufacturing of first electrode 202, said first electrode 202 connects the ring-like magnetic tunnel-junction of nanometer and the write circuit of follow-up formation or reads circuit, to realize the information stores of magnetic resistance internal memory.
Afterwards, on said first electrode 202, form first ferromagnetic layer 203, insulating barrier 204 and second ferromagnetic layer 205 successively, thereby formed the magnetic tunnel-junction that is positioned on first electrode 202.Particularly, the material of said first ferromagnetic layer 203 and second ferromagnetic layer 205 is ferromagnetic materials such as iron, manganese, cobalt; Said first electrode 202 can be electric conducting materials such as metal, and for example, the material of said first electrode 202 is copper or aluminium.
Execution in step S2, as shown in Figure 5, comprise in the step that forms the first cylindric hard mask on the said magnetic tunnel-junction: deposition medium material on second ferromagnetic layer 205 forms hard mask layer 212; On said hard mask layer 212, form columned photoresist figure 207; With said photoresist figure 207 is the said hard mask layer 212 of mask etching, until exposing second ferromagnetic layer 205.Be positioned at the first cylindric hard mask 213 (as shown in Figure 6) on the magnetic tunnel-junction thereby form.
Need to prove; In subsequent step, be the said magnetic tunnel-junction of mask etching with the said first cylindric hard mask 213, to form the outer radius portion of the ring-like magnetic tunnel-junction of said nanometer; Therefore the size of the said first cylindric hard mask 213 is identical with the outside dimension of the ring-like magnetic tunnel-junction of nanometer that is about to form; Correspondingly, also the outside dimension with the ring-like magnetic tunnel-junction of nanometer is identical to be used to form the size of columned photoresist figure 207 of the first cylindric hard mask 213, for example; Needing to form outside dimension is the ring-like magnetic tunnel-junction of nanometer of 90～110nm; Correspondingly, the diameter of said columned photoresist figure 207, the said first cylindric hard mask 213 and nanometer annular magnetic tunnel-junction measure-alike all is positioned at the scope of 90～110nm.
Also need to prove; Because follow-up also carrying out repaired to form the second cylindric hard mask, to remove the processing step of the second cylindric hard mask etc. the said first cylindric hard mask 213, be chosen in when therefore needing to select hard mask material in these technologies with respect to second ferromagnetic layer 205 and have material than the choice ratio as the first cylindric hard mask 213.Particularly, the material of the said first cylindric hard mask 213 is amorphous carbon or silicon nitride.
Need to prove that also for the magnetic tunnel-junction that the present invention is formed has the good characteristic that is electrically connected with first electrode 202, the contact area of the said magnetic tunnel-junction and first electrode 202 is maximum, promptly said magnetic tunnel-junction is positioned on said first electrode 202 fully.
Execution in step S3, as shown in Figure 7, be the mask etching magnetic tunnel-junction with the said first cylindric hard mask 213, until exposing first electrode, form columned magnetic tunnel-junction, said columned magnetic tunnel-junction is identical with the diameter of the first cylindric hard mask 213.
Execution in step S4, as shown in Figure 8, the said first cylindric hard mask 213 is repaired processing make, from radially reducing the size of the first cylindric hard mask 213,, form the second cylindric hard mask 206 to reduce the diameter of the first cylindric hard mask 213.In addition; The hard mask material of radially removing same thickness from the first cylindric hard mask 213; So that the hard mask 206 of second cylinder is overlapped with the center of circle of the first cylindric hard mask 213, even the hard mask 206 of second cylinder overlaps with the center of circle of columned tunnel junction.
Particularly, said pre-shaping step comprises the said first cylindric hard mask 213 is carried out etching.In the present embodiment, said etching can be to do method or wet etching at quarter, and for example, the material of the said first cylindric hard mask 213 is an amorphous carbon, can adopt ashing method to remove the part material of the first cylindric hard mask 213; The material of the for example said first cylindric hard mask 213 is a silicon nitride again; Can adopt the wet etching of phosphoric acid solution to remove the part material of the first cylindric hard mask 213; Perhaps adopt the method at dried quarter of carbon tetrafluoride to remove the part material of the first cylindric hard mask 213; Said pre-shaping step is identical with prior art, repeats no more inferior.
Need to prove; In subsequent step; Need to remove the second cylindric hard mask 206,, and remove the magnetic tunnel-junction that said opening exposes with the formation opening; Forming the inner-diameter portion whose of the ring-like magnetic tunnel-junction of nanometer, so that the size of handling the second cylindric hard mask 206 that the back forms through finishing needs is identical with the internal diameter size of the ring-like magnetic tunnel-junction of the nanometer that is about to form.For example; The internal diameter size of the magnetic tunnel-junction that nanometer is ring-like is 40～60nm; Correspondingly; In trim process, need the etch quantity of control to the second cylindric hard mask 206, the internal diameter size of the magnetic tunnel-junction that the diameter that makes the second cylindric hard mask 206 that forms through trim process and nanometer are ring-like is identical.Particularly, the diameter of the said second cylindric hard mask 206 is positioned at the scope of 40～60nm.
Behind execution of step S4, the magnetic tunnel-junction that the second cylindric hard mask 206 exposes is circular.
Execution in step S5, as shown in Figure 9, at deposition medium material on the circular magnetic tunnel-junction that the second cylindric hard mask 206 exposes and on first electrode 202 that exposes of magnetic tunnel-junction, form first dielectric layer 208.
Need to prove; Remove the said second cylindric hard mask 206 follow-up also comprising; The step of the opening that formation is surrounded by first dielectric layer 208 and magnetic tunnel-junction, therefore, when the material of first dielectric layer 208 is selected; Need to select to remove technology said first dielectric layer 208 is selected smaller material, for example the material of first dielectric layer 208 is a silica.
In addition, bigger for the thickness of first dielectric layer 208, to such an extent as to cover the situation of the second cylindric hard mask 206; After execution in step S5, preferably, remove the dielectric material of the second cylindric hard mask, 206 tops through flatening process; Expose the second cylindric hard mask 206, so that carry out the step of the follow-up removal second cylindric hard mask 206, particularly; Said flatening process be chemical mechanical milling tech (Chemical Mechanical Polishing, CMP).
Execution in step S6, shown in figure 10, particularly, the material of the said second cylindric hard mask 206 (the first cylindric hard mask 213) is an amorphous carbon, can adopt ashing method to remove the said second cylindric hard mask 206; Perhaps, the material of the second cylindric hard mask 206 (the first cylindric hard mask 213) is a silicon nitride, can adopt the wet etching of phosphoric acid solution to remove two cylindric hard masks 206.Thereby the position in that the second cylindric hard mask 206 occupied originally forms the opening 210 that is surrounded by first dielectric layer 208 and second ferromagnetic layer 205.
Because the said second cylindric hard mask 206 is cylindric; Correspondingly, said opening 210 also is cylindric, correspondingly; Said columned opening 210 is identical with the diameter of the columned second cylindric hard mask 206; Be equal to the internal diameter size of the ring-like magnetic tunnel-junction of nanometer, particularly, the size of said columned opening 210 also is positioned at the scope of 40～60nm.
Execution in step S7; Magnetic tunnel-junction shown in figure 11, as to expose through the said opening 210 of dry etching method etching is until exposing first electrode; Thereby form the through hole 214 that runs through said magnetic tunnel-junction, said through hole 214 constitutes the inner-diameter portion whose of the ring-like magnetic tunnel-junction of nanometer.Correspondingly, said through hole 214 is cylindric, and said through hole 214 is identical with the diameter of opening 210.
Execution in step S8, shown in figure 12, in said through hole 214, fill dielectric material, form and be filled in second dielectric layer 215 in the through hole 214.
So far having accomplished and so far having accomplished outside dimension is 90～110nm, and internal diameter size is the manufacture process of the ring-like magnetic tunnel-junction of nanometer of 40～60nm.
Preferably, after forming second dielectric layer 215, be covered in the too much dielectric layer material on the magnetic tunnel-junction,, be convenient on magnetic tunnel-junction, form second electrode to expose magnetic tunnel-junction through the flatening process removal.
Afterwards; Formation is covered on the said magnetic tunnel-junction and is embedded in the conductive material layer in second dielectric layer 215, and said conductive material layer constitutes second electrode 211, and said second electrode 211 can be copper or aluminium; The manufacturing approach of said second electrode 211 is identical with prior art, repeats no more at this.
Said second electrode 211 is in the magnetic resistance internal memory, is used to realize the ring-like magnetic tunnel-junction of nanometer with write circuit or read circuit and be electrically connected, to realize the connector of magnetic resistance memory information storage.
The process that is adopted in the manufacture process of the ring-like magnetic tunnel-junction of nanometer provided by the invention all can go up at existing industry line (for example, process node is greater than the product line of 130nm) and realize, can produce in a large number.
Though the present invention discloses as above with preferred embodiment, the present invention is defined in this.Any those skilled in the art are not breaking away from the spirit and scope of the present invention, all can do various changes and modification, so protection scope of the present invention should be as the criterion with claim institute restricted portion.
Claims (10)
1. the manufacturing approach of the ring-like magnetic tunnel-junction of nanometer is characterized in that, comprises, magnetic tunnel-junction is provided; On said tunnel junction, forming diameter is the first cylindric hard mask of first size; With the said first cylindric hard mask is the said magnetic tunnel-junction of mask etching, forms cylindric magnetic tunnel-junction; From radially the said first cylindric hard mask being repaired processing, forming diameter is the second cylindric hard mask of second size, and the said second cylindric hard mask exposes the magnetic tunnel-junction of circular ring type; Deposition medium material on the magnetic tunnel-junction that the said second cylindric hard mask exposes forms first dielectric layer; Remove the said second cylindric hard mask, form the opening that surrounds by said first dielectric layer and magnetic tunnel-junction; Remove magnetic tunnel-junction that said opening exposes and run through the through hole of said magnetic tunnel-junction until formation, deposition medium material in said through hole forms and is filled in second dielectric layer in the said through hole.
2. manufacturing approach as claimed in claim 1 is characterized in that, the axle of the said first cylindric hard mask and the second cylindric hard mask overlaps.
3. manufacturing approach as claimed in claim 1 is characterized in that said first size is positioned at the scope of 90～110nm; Second size is positioned at the scope of 40～60nm.
4. manufacturing approach as claimed in claim 1 is characterized in that, the material of the said first cylindric hard mask and the second cylindric hard mask is amorphous carbon or silicon nitride.
5. manufacturing approach as claimed in claim 1 is characterized in that, the material of the said first cylindric hard mask is an amorphous carbon, through ashing method the said first cylindric hard mask is repaired processing; Remove the second cylindric hard mask through ashing method.
6. manufacturing approach as claimed in claim 1 is characterized in that, the material of the said first cylindric hard mask is a silicon nitride, through phosphoric acid solution the said first cylindric hard mask is wet quarter, to repair processing; Remove the second cylindric hard mask through phosphoric acid solution.
7. manufacturing approach as claimed in claim 1; It is characterized in that; Deposition medium material on the magnetic tunnel-junction that the said second cylindric hard mask exposes; The step that forms first dielectric layer comprises: deposition medium material on the magnetic tunnel-junction that the said second cylindric hard mask exposes is covered on the second cylindric hard mask until said dielectric material; Remove the dielectric material on the second cylindric hard mask through flatening process, expose the said second cylindric hard mask, form first dielectric layer.
8. the manufacturing approach of a magnetic resistance internal memory is characterized in that, comprising: on substrate, form first electrode; On first electrode, form magnetic tunnel-junction; On said tunnel junction, forming diameter is the first cylindric hard mask of first size; With the said first cylindric hard mask is the said magnetic tunnel-junction of mask etching, forms cylindric magnetic tunnel-junction; From radially the said first cylindric hard mask being repaired processing, forming diameter is the second cylindric hard mask of second size, and the said second cylindric hard mask exposes the magnetic tunnel-junction of circular ring type; Deposition medium material on the magnetic tunnel-junction that the said second cylindric hard mask exposes forms first dielectric layer; Remove the said second cylindric hard mask, form the opening that surrounds by said first dielectric layer and magnetic tunnel-junction; Remove magnetic tunnel-junction that said opening exposes and run through the through hole of said magnetic tunnel-junction until formation, deposition medium material in said through hole forms and is filled in second dielectric layer in the said through hole; On said second dielectric layer, form and be covered in second electrode on the said magnetic tunnel-junction.
9. the manufacturing approach of magnetic resistance internal memory as claimed in claim 8 is characterized in that, said first electrode and second electrode are copper layer or aluminium lamination.
10. the manufacturing approach of magnetic resistance internal memory as claimed in claim 8 is characterized in that, said magnetic tunnel-junction is positioned on said first electrode, and the contact area of the magnetic tunnel-junction and first electrode is maximum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010568181.XA CN102479920B (en) | 2010-11-30 | 2010-11-30 | Manufacture method of nanometer annular magnetic tunnel structure and manufacture method of magnetic resistance internal memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010568181.XA CN102479920B (en) | 2010-11-30 | 2010-11-30 | Manufacture method of nanometer annular magnetic tunnel structure and manufacture method of magnetic resistance internal memory |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102479920A true CN102479920A (en) | 2012-05-30 |
| CN102479920B CN102479920B (en) | 2014-01-08 |
Family
ID=46092467
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010568181.XA Active CN102479920B (en) | 2010-11-30 | 2010-11-30 | Manufacture method of nanometer annular magnetic tunnel structure and manufacture method of magnetic resistance internal memory |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102479920B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104465983A (en) * | 2013-09-17 | 2015-03-25 | 中芯国际集成电路制造(上海)有限公司 | Magnetic tunnel junction and formation method thereof |
| CN104465984A (en) * | 2013-09-17 | 2015-03-25 | 中芯国际集成电路制造(北京)有限公司 | Magnetic tunnel junction and forming method thereof |
| CN104518082A (en) * | 2013-09-30 | 2015-04-15 | 中芯国际集成电路制造(上海)有限公司 | Magnetic random access memory and formation method thereof |
| CN104576919A (en) * | 2013-10-18 | 2015-04-29 | 中芯国际集成电路制造(上海)有限公司 | Magnetic tunnel junction, manufacturing method thereof and storage unit containing magnetic tunnel junction |
| CN107851712A (en) * | 2015-07-30 | 2018-03-27 | 斯平转换技术公司 | For processing the polishing stop layer of semiconductor device array |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040008058A (en) * | 2002-07-15 | 2004-01-28 | 삼성전자주식회사 | A semiconductor device having a magnetic tunneling junction of a ring type and a fabrication thereof |
| US20040166640A1 (en) * | 2003-02-26 | 2004-08-26 | Sony Corporation | Method for preparing a ring-formed body, and magnetic memory device and method for manufacturing the same |
| CN1992104A (en) * | 2005-12-31 | 2007-07-04 | 中国科学院物理研究所 | Ring-shaped magnetic multi-layer film and method for making same and use |
| CN101459218A (en) * | 2007-12-13 | 2009-06-17 | 中芯国际集成电路制造(上海)有限公司 | Annular semiconductor device and producing method thereof |
| WO2010116102A1 (en) * | 2009-04-09 | 2010-10-14 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Spin-valve or tunnel-junction radio-frequency oscillator, process for adjusting the frequency of such an oscillator and network consisting of a plurality of such oscillators |
-
2010
- 2010-11-30 CN CN201010568181.XA patent/CN102479920B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040008058A (en) * | 2002-07-15 | 2004-01-28 | 삼성전자주식회사 | A semiconductor device having a magnetic tunneling junction of a ring type and a fabrication thereof |
| US20040166640A1 (en) * | 2003-02-26 | 2004-08-26 | Sony Corporation | Method for preparing a ring-formed body, and magnetic memory device and method for manufacturing the same |
| CN1992104A (en) * | 2005-12-31 | 2007-07-04 | 中国科学院物理研究所 | Ring-shaped magnetic multi-layer film and method for making same and use |
| CN101459218A (en) * | 2007-12-13 | 2009-06-17 | 中芯国际集成电路制造(上海)有限公司 | Annular semiconductor device and producing method thereof |
| WO2010116102A1 (en) * | 2009-04-09 | 2010-10-14 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Spin-valve or tunnel-junction radio-frequency oscillator, process for adjusting the frequency of such an oscillator and network consisting of a plurality of such oscillators |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104465983A (en) * | 2013-09-17 | 2015-03-25 | 中芯国际集成电路制造(上海)有限公司 | Magnetic tunnel junction and formation method thereof |
| CN104465984A (en) * | 2013-09-17 | 2015-03-25 | 中芯国际集成电路制造(北京)有限公司 | Magnetic tunnel junction and forming method thereof |
| CN104465983B (en) * | 2013-09-17 | 2017-02-22 | 中芯国际集成电路制造(上海)有限公司 | Magnetic tunnel junction and formation method thereof |
| CN104465984B (en) * | 2013-09-17 | 2017-08-25 | 中芯国际集成电路制造(北京)有限公司 | MTJ and forming method thereof |
| CN104518082A (en) * | 2013-09-30 | 2015-04-15 | 中芯国际集成电路制造(上海)有限公司 | Magnetic random access memory and formation method thereof |
| CN104576919A (en) * | 2013-10-18 | 2015-04-29 | 中芯国际集成电路制造(上海)有限公司 | Magnetic tunnel junction, manufacturing method thereof and storage unit containing magnetic tunnel junction |
| CN104576919B (en) * | 2013-10-18 | 2017-05-17 | 中芯国际集成电路制造(上海)有限公司 | Magnetic tunnel junction, manufacturing method thereof and storage unit containing magnetic tunnel junction |
| CN107851712A (en) * | 2015-07-30 | 2018-03-27 | 斯平转换技术公司 | For processing the polishing stop layer of semiconductor device array |
| CN107851712B (en) * | 2015-07-30 | 2021-10-29 | 芯成半导体(开曼)有限公司 | Polishing stop layer for processing semiconductor element array |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102479920B (en) | 2014-01-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102208529B (en) | Magnetoresistive random access memory element and fabrication method thereof | |
| CN102687298B (en) | There is the manufacture that comprises the top electrodes of MTJ and the device of bottom electrode and integrated | |
| CN101911327B (en) | Method of forming a magnetic tunnel junction structure | |
| CN103107281B (en) | Semiconductor device and manufacturing method thereof | |
| KR101096343B1 (en) | Methods and structures for electrical communication with an overlying electrode for a semiconductor element | |
| US7910912B2 (en) | Semiconductor devices having a planarized insulating layer | |
| US9082962B2 (en) | Magnetic Tunnel Junction (MTJ) on planarized electrode | |
| CN102479920B (en) | Manufacture method of nanometer annular magnetic tunnel structure and manufacture method of magnetic resistance internal memory | |
| CN103066198B (en) | Novel magnetic tunnel junction (MTJ) device and manufacturing method thereof | |
| WO2006132750A2 (en) | 3-d inductor and transformer devices in mram embedded integrated circuits | |
| CN110224059A (en) | Semiconductor device and forming method thereof | |
| CN109494192A (en) | Semiconductor element with and preparation method thereof | |
| CN104659201B (en) | A kind of manufacturing method of resistance internal memory unit | |
| CN102201533B (en) | Manufacturing method for magnetic tunnel junction structure | |
| JP6800186B2 (en) | Circuit structure and its manufacturing method | |
| CN110875421B (en) | Magnetoresistive memory cell and method for producing the same | |
| CN108376690B (en) | Self-aligned interconnection method for manufacturing high-density MRAM | |
| KR100434956B1 (en) | A method for manufacturing of Magnetic random access memory | |
| CN113540026B (en) | Bit line structure, manufacturing method thereof, semiconductor memory and electronic equipment | |
| KR20030078136A (en) | A method for manufacturing of a Magnetic random access memory | |
| KR20020046037A (en) | A method for forming a semiconductor device | |
| CN104576919B (en) | Magnetic tunnel junction, manufacturing method thereof and storage unit containing magnetic tunnel junction | |
| CN111668364B (en) | Preparation method of magnetic memory device and magnetic memory device | |
| CN113540027B (en) | Bit line structure, manufacturing method thereof, semiconductor memory and electronic equipment | |
| KR20040110482A (en) | A method for manufacturing of a Magnetic random access memory |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING (BEIJING) INTERNATIONA Effective date: 20121101 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20121101 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant after: Semiconductor Manufacturing International (Shanghai) Corporation Applicant after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant before: Semiconductor Manufacturing International (Shanghai) Corporation |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |