CN104576919A - Magnetic tunnel junction, manufacturing method thereof and storage unit containing magnetic tunnel junction - Google Patents
Magnetic tunnel junction, manufacturing method thereof and storage unit containing magnetic tunnel junction Download PDFInfo
- Publication number
- CN104576919A CN104576919A CN201310492822.1A CN201310492822A CN104576919A CN 104576919 A CN104576919 A CN 104576919A CN 201310492822 A CN201310492822 A CN 201310492822A CN 104576919 A CN104576919 A CN 104576919A
- Authority
- CN
- China
- Prior art keywords
- layer
- magnetic tunnel
- junction
- cylinder
- annular magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
Abstract
The invention provides a nano-ring-shaped magnetic tunnel junction which is characterized by at least comprising a tunneling oxidation layer positioned in the middle, an upper magnetic layer, a lower magnetic layer and an elliptic cylindrical penetration hole, wherein the tunneling oxidation layer is made of metallic oxide; the upper magnetic layer is arranged at the upper part of the tunneling oxidation layer; the lower magnetic layer is arranged at the lower part of the tunneling oxidation layer; the peripheries of the upper magnetic layer, the tunneling oxidation layer and the lower magnetic layer form a cylindrical body; the elliptic cylindrical penetration hole vertically penetrates through the upper magnetic layer, the tunneling oxidation layer and the lower magnetic layer. According to the magnetic tunnel junction, the manufacturing method thereof and the storage unit containing the magnetic tunnel junction, the shape anisotropy characteristic of the magnetic tunnel junction is utilized, so that the ring-shaped magnetic tunnel junction with an elliptic inner part and a circular outer part is manufactured, the heat stability of the magnetic tunnel junction is improved, back magnetization nuclecgenesis and magnetic inversion are facilitated, the drive current density is decreased, the critical current value is reduced, and the power consumption is reduced.
Description
Technical field
The present invention relates to field of semiconductor devices, particularly relate to a kind of magnetic tunnel-junction, its manufacture method and the memory cell containing magnetic tunnel-junction.
Background technology
In recent years, along with the development of semiconductor technology, require that semiconductor device is to light, thin, short and smallization development, also means that semiconductor device is to high speed, high integration, low power consumption future development simultaneously.Therefore to improve to the structure of semiconductor device the growth requirement adapting to state-of-the-art technology.Resistance internal memory (Magnetic Random Access Memory, MRAM), owing to having high speed, low-voltage, high density, the advantage such as non-volatile, becomes one of memory paid close attention in market.
MRAM is by applying magnetic field, information being stored in magnetic tunnel-junction (Magnetic Tunnel Junction, MTJ) structure, and by measuring the technology being read information by the electric current of MTJ.Particularly, described MTJ is made up of two ferromagnetic layers and the metal oxide layer between described two ferromagnetic layers.Be disclose a kind of mtj structure for storage device in the Chinese patent of CN1402254C at notification number.
Along with the development of MTJ technology, there is a kind of magnetic tunnel-junction (Nano-ring-type MagneticTunnel Junction, NR-MTJ) structure of nanometer annular in this area, and NR-MTJ has reduction magnetic noise and increases the advantages such as memory capacity.In conjunction with reference to figure 1 with reference to figure 2, respectively illustrate schematic perspective view and the schematic top plan view of nanometer annular magnetic tunnel-junction in prior art, described nanometer annular magnetic tunnel-junction is a multi-layer film structure, particularly, by lower and on comprise the first ferromagnetic layer 101 successively, metal oxide layer 102, second ferromagnetic layer 103, described multi-layer film structure also comprises and runs through described first ferromagnetic layer 101, metal oxide layer 102, the through hole of the second ferromagnetic layer 103, columned dielectric layer is filled with in described through hole, described first ferromagnetic layer 101, metal oxide layer 102, second ferromagnetic layer 103 is annular, the radial dimension of each layer of described nanometer annular magnetic tunnel-junction is all in the scope of nanometer scale (such as 25nm).Patent CN200710094480.2 also discloses a kind of annular magnetic tunnel junction and manufacture method thereof.
When the magnetic tunnel-junction to above-mentioned cross section being annular (inner circle cylindrical) carries out electric current write, the magnetic field reverses direction of wishing as shown in Figure 3A, but spin transfer torque (STT) effect can make the state of annular magnetic tunnel junction sometimes unstable, undesirable direction shown in possible automatic turning to Fig. 3 B-3D, now normal condition can be departed to magnetic field reverses direction during magnetic tunnel-junction applying electric current, and magnetic field upset also can be uncontrolled, as Fig. 4 A shows magnetic field and MR curves figure that cross section is the magnetic tunnel-junction of annular.
Summary of the invention
The shortcoming of prior art in view of the above, a kind of through hole is the object of the present invention is to provide to be the nanometer annular magnetic tunnel-junction of Elliptic Cylinder, its manufacture method and containing the memory cell of magnetic tunnel-junction, for solving the problem of annular magnetic tunnel junction state labile in prior art.
For achieving the above object and other relevant objects, the invention provides a kind of nanometer annular magnetic tunnel-junction, it is characterized in that, described nanometer annular magnetic tunnel-junction at least comprises:
Tunnel oxide, described tunnel oxide layer material is metal oxide;
Upper magnetosphere, is arranged at the top of described tunnel oxide;
Magnetic layer, is arranged at the bottom of described tunnel oxide, and wherein, the periphery of described upper magnetosphere, described tunnel oxide and described magnetic layer is formed as a cylinder;
Elliptical cylinder-shape through hole, vertically runs through described upper magnetosphere, described tunnel oxide and described magnetic layer.
Preferably, the geometrical axis of described cylinder overlaps with the geometrical axis of described elliptical cylinder-shape through hole.
Preferably, dielectric layer is filled with in described elliptical cylinder-shape through hole.
Preferably, described cylinder is cylinder or Elliptic Cylinder.
Preferably, described cylinder is cylinder, and described cylindrical diameter range is 100 ~ 300 nanometers, and the major axis scope of described elliptical cylinder-shape through hole is 50 ~ 200 nanometers, and minor axis scope is 25 ~ 100 nanometers.
Preferably, the major axis of described elliptical cylinder-shape through hole meets 1:1 < A:B≤1:2 with the ratio A:B of minor axis.
Preferably, described magnetic tunnel-junction also comprises top electrode and bottom electrode, and wherein, top electrode is electrically connected with upper magnetosphere, and bottom electrode is electrically connected with magnetic layer.
Correspondingly, present invention also offers the manufacture method of a kind of nanometer annular magnetic tunnel-junction, it is characterized in that, the method comprises the following steps:
Formed on the bottom electrode and bottom-uply comprise magnetic layer, tunnel oxide and upper magnetospheric magnetic tunnel-junction successively;
First barrier layer with cylinder open is formed above described magnetic tunnel-junction;
In described cylinder open, deposit first medium layer and grind flat;
The second barrier layer is formed above described first medium layer; Etch described second barrier layer, until run through described first medium layer, form elliptical cylinder-shape through hole;
Repair described first medium layer, make described first medium layer form cylindrical peripheral, wherein, the diameter of described cylinder open is identical with the diameter of described cylindrical peripheral;
With described first medium layer for magnetic tunnel-junction described in mask etch, until form circular cylinder oval in cylindrical;
In described circular cylinder, deposit second dielectric layer, described second dielectric layer is formed the top electrode be covered on described magnetic tunnel-junction.
Preferably, above described magnetic tunnel-junction, form first barrier layer with cylinder open to comprise:
The first barrier layer is formed above described magnetic tunnel-junction;
Described first barrier layer forms the first photoresist layer, defines outer diameter shape and the size of annular magnetic tunnel junction;
With described first photoresist layer for the first barrier layer described in mask etch, form cylinder open, wherein, the diameter of described cylinder open is identical with the external diameter of described annular magnetic tunnel junction;
Remove described first photoresist layer.
Preferably, above described first medium layer, form the second barrier layer to comprise:
The second barrier layer is formed above described first medium layer;
Described second barrier layer forms the second photoresist layer, defines shape and the size of the interior ellipse of annular magnetic tunnel junction.
Preferably, etch described second barrier layer, comprise until run through described first medium layer:
With described second photoresist layer for the second barrier layer described in mask etch, until run through described first medium layer;
Remove described second photoresist layer.
Preferably, repair described first medium layer to comprise further and being repaired described first medium layer by ashing method.
Preferably, in described circular cylinder, deposit second dielectric layer, described second dielectric layer formed the top electrode be covered on described magnetic tunnel-junction and comprises further:
With periphery deposition second dielectric layer in the oval through hole of described circular cylinder;
Grind away unnecessary second dielectric layer, to expose the upper surface of magnetic tunnel-junction;
And form the top electrode be covered in magnetic tunnel-junction and second dielectric layer.
Preferably, described first barrier layer at least comprises hard mask layer and etching anti-carve layer.
Preferably, described hard mask layer is selected from one in silicon nitride, silica, amorphous carbon, the amorphous carbon of hydrogenation, low friction carbon or its combination, and described etching anti-carve layer is fire sand.
Preferably, described hard mask layer comprises non-functional type carbon.
Correspondingly, present invention also offers a kind of comprise nanometer of the present invention annular magnetic tunnel-junction memory cell.
As mentioned above, a kind of magnetic tunnel-junction of the present invention, its manufacture method and the memory cell containing magnetic tunnel-junction have following beneficial effect: the shape anisotropy feature that present invention utilizes magnetic tunnel-junction, produce the annular magnetic tunnel junction of interior oval cylindrical, oersted field assisting overturn in this oval ring structure and the easy formation of nuclei of reversed domain, critical current density is caused relatively to reduce, thus add the thermal stability of magnetic tunnel-junction and accelerate nuclei of reversed domain and formed and magnetic inversion, and reduce drive current density and critical electric current value and power consumption.
Accompanying drawing explanation
Fig. 1 is shown as the schematic perspective view of nanometer annular magnetic tunnel-junction in prior art.
Fig. 2 is shown as the schematic top plan view of the annular of nanometer shown in Fig. 1 magnetic tunnel-junction.
Fig. 3 A is shown as the magnetic field reverses direction schematic diagram that annular magnetic tunnel junction is wished.
Fig. 3 B is shown as annular magnetic tunnel junction undesirable magnetic field reverses direction schematic diagram.
Fig. 3 C is shown as annular magnetic tunnel junction undesirable magnetic field reverses direction schematic diagram.
Fig. 3 D is shown as annular magnetic tunnel junction undesirable magnetic field reverses direction schematic diagram.
Fig. 4 A is shown as magnetic field and the MR curves schematic diagram of the annular magnetic tunnel junction of toroidal in cylindrical.
Fig. 4 B is shown as magnetic field and the MR curves schematic diagram of the annular magnetic tunnel junction of elliptical shape in cylindrical.
Fig. 5 A is shown as the schematic perspective view of nanometer of the present invention annular magnetic tunnel-junction.
Fig. 5 B is shown as the schematic top plan view of nanometer of the present invention annular magnetic tunnel-junction.
The structural representation that the step S1 that Fig. 6 is shown as the manufacture method of nanometer of the present invention annular magnetic tunnel-junction is formed.
The structural representation that the step S2 that Fig. 7 is shown as the manufacture method of nanometer of the present invention annular magnetic tunnel-junction is graphically formed afterwards.
The structural representation that Fig. 8 is formed after being shown as the step S2 etching of the manufacture method of nanometer of the present invention annular magnetic tunnel-junction.
The structural representation that the step S3 that Fig. 9 is shown as the manufacture method of nanometer of the present invention annular magnetic tunnel-junction is formed.
The structural representation that the step S4 that Figure 10 is shown as the manufacture method of nanometer of the present invention annular magnetic tunnel-junction is formed.
The structural representation that the step S5 that Figure 11 is shown as the manufacture method of nanometer of the present invention annular magnetic tunnel-junction is formed.
The structural representation that the step S6 that Figure 12 is shown as the manufacture method of nanometer of the present invention annular magnetic tunnel-junction is formed.
The structural representation that the step S7 that Figure 13 is shown as the manufacture method of nanometer of the present invention annular magnetic tunnel-junction is formed.
The structural representation that the step S8 that Figure 14 is shown as the manufacture method of nanometer of the present invention annular magnetic tunnel-junction is formed.
The structural representation that the step S9 that Figure 15 is shown as the manufacture method of nanometer of the present invention annular magnetic tunnel-junction is formed.
Figure 16 is shown as the structural representation of the memory cell containing magnetic tunnel-junction of the present invention.
Element numbers explanation
601 bottom electrodes
602 magnetic layers
603 tunnel oxides
Magnetosphere on 604
60 elliptical cylinder-shape through holes
605 first barrier layers
6061 first photoresist layers
6051 hard mask layers
6052 etching anti-carve layers
6053 first mask layers
6054 second mask layers
606 second barrier layers
607 second photoresist layers
608 top electrodes
11 magnetic tunnel-junctions
12 cylinder open
13 first medium layers
14 elliptical cylinder-shape through holes
15 second dielectric layer
901 transistors
902 conductors
903 bit lines
904 conductors
905 wordline
906 source electrode lines
907 conductors
S1-S9 step
Embodiment
Below by way of specific instantiation, embodiments of the present invention are described, those skilled in the art the content disclosed by this specification can understand other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by embodiments different in addition, and the every details in this specification also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.
Refer to the structural representation of Fig. 5 A nanometer annular of the present invention magnetic tunnel-junction.This nanometer annular magnetic tunnel-junction at least comprises:
Tunnel oxide 603, described tunnel oxide 603 material is metal oxide;
Upper magnetosphere 604, is arranged at the top of described tunnel oxide 603;
Magnetic layer 602, is arranged at the bottom of described tunnel oxide 603, and wherein, the periphery of described upper magnetosphere 604, described tunnel oxide 603 and described magnetic layer 602 is formed as a cylinder;
Elliptical cylinder-shape through hole 60, vertically runs through described upper magnetosphere 604, described tunnel oxide 603 and described magnetic layer 602.
It should be noted that, the diagram provided in the present embodiment only illustrates basic conception of the present invention in a schematic way, then only the assembly relevant with the present invention is shown in graphic but not component count, shape and size when implementing according to reality is drawn, it is actual when implementing, and the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout kenel also may be more complicated.
Introduce each Rotating fields of nanometer annular magnetic tunnel-junction below, magnetic layer 602 is also referred to as fixed bed, and upper magnetosphere 604 is also referred to as free layer, and the magnetic direction of fixed bed is fixing, and the magnetic direction of free layer is variable.Magnetic layer 602 and upper magnetosphere 604 are magnetosphere, and tunnel oxide 603 is metal oxide.Magnetic layer 602 and upper magnetosphere 604 can be ferromagnetic material, and as CoFeB, NiFe, CoFe etc., tunnel oxide 502 can be Al
2o
3or MgO.Described nanometer annular magnetic tunnel-junction also comprises: inverse ferric magnetosphere (not shown), be arranged under magnetic layer 602, described inverse ferric magnetosphere is used for fixing the direction of magnetization of magnetic layer 6021 in magnetic tunnel-junction ablation process, when avoiding the coercive force due to described fixed bed to cause not greatly flowing through by the electric current in bit line or wordline the induced field of generation aspect effect and change the direction of magnetization.The material of inverse ferric magnetosphere can select the alloy comprising Pt or Mn, and its thickness is greater than magnetic layer 602.When by magnetic layer 602, upwards magnetosphere 604 flows through reset current, the spin direction electric current identical with the direction of magnetization of magnetic layer 602 is only had just to enter upper magnetosphere 604 by magnetic layer 602 and tunnel oxide 603, thus the direction of magnetization changing upper magnetosphere 604 is identical with magnetic layer 602, definition now writes " 0 "; When reset current direction, electric current is flow through by the downward magnetosphere 602 of upper magnetosphere 604, now still for only have spin direction identical with the direction of magnetization of magnetic layer 602 electronics just by, the direction of magnetization therefore go up magnetosphere 604 is contrary with magnetic layer 602, then now write " 1 ".
As shown in Figure 5A, in an embodiment of the present invention, the outward flange of upper magnetosphere 604, tunnel oxide 603 and magnetic layer 602 is smooth curves, these smooth curves form a cylinder jointly, and upper magnetosphere 604, tunnel oxide 603 and magnetic layer 602 form all separately the identical cylinder of a shape.Preferably, described cylinder is cylinder or Elliptic Cylinder, and the upper and lower of namely going up magnetosphere 604, tunnel oxide 603 and magnetic layer 602 is plane, and outward flange forms cylinder or Elliptic Cylinder.
As fig. 5 a and fig. 5b, elliptical cylinder-shape through hole 60 vertically runs through the planar section of magnetosphere 604, tunnel oxide 603 and magnetic layer 602.Preferably, the geometrical axis of described cylinder overlaps with the geometrical axis of described elliptical cylinder-shape through hole 60.Particularly, when described cylinder be cylinder or Elliptic Cylinder time, the point coincides in the central point in described cylinder cross section and the cross section of described elliptical cylinder-shape through hole 60, namely described elliptical cylinder-shape through hole 60 is positioned at the centre of described cylinder.The major axis in the cross section of described elliptical cylinder-shape through hole 60 meets 1:1 < A:B≤1:2 with the ratio A:B of minor axis.Preferably, A:B=1:2.
It should be noted that, when described cylinder is cylinder, the diameter range in cylindrical cross section is 100 ~ 300 nanometers, and when described cylinder is Elliptic Cylinder, the major axis scope in the cross section of Elliptic Cylinder is 100 ~ 300 nanometers.The major axis scope in the cross section of described elliptical cylinder-shape through hole 60 is 50 ~ 200 nanometers, and minor axis scope is 25 ~ 100 nanometers.Preferably, described cylindrical cross-sectional diameter is 200 nanometers, and the major axis in the cross section of described elliptical cylinder-shape through hole 60 is 100 nanometers, and minor axis is 50 nanometers.
It is pointed out that in described elliptical cylinder-shape through hole 60 can filled media layer (not shown), and described dielectric layer can be any one or its combination in silica, silicon nitride, silicon oxynitride.Described magnetic tunnel-junction also comprises top electrode and bottom electrode (not shown), and wherein, top electrode is electrically connected with upper magnetosphere 604, and bottom electrode is electrically connected with magnetic layer 602.Top electrode and bottom electrode can be the electric conducting materials such as metal, such as copper.
Refer to the schematic diagram in each stage in the manufacturing process of Fig. 6-15 nanometer of the present invention annular magnetic tunnel-junction.It should be noted that nanometer of the present invention annular magnetic tunnel-junction can adopt chemical etching method manufacture conventional in electron beam lithography, sub-ion beam milling or industrial production line.Preferably nanometer annular magnetic tunnel-junction of the present invention adopts chemical etching method conventional in industrial production line manufacture.In the present embodiment, the manufacture method of nanometer annular magnetic tunnel-junction comprises the following steps:
Step S1: as shown in Figure 6,601 forms the bottom-up magnetic tunnel-junction 11 comprising magnetic layer 602, tunnel oxide 603 and upper magnetosphere 604 successively on the bottom electrode.
It should be noted that, described bottom electrode 601 is formed at (not shown) on substrate, in an embodiment of the present invention, substrate forms interlayer dielectric layer, graphical described interlayer dielectric layer, forms the through hole running through described interlayer dielectric layer; Deposits conductive material in described through hole, until fill up described through hole, thus completes the manufacture of bottom electrode, and described bottom electrode connects nanometer annular magnetic tunnel-junction and write circuit or the reading circuit of follow-up formation, to realize the information storage of resistance internal memory.It should be noted that, the manufacture method of bottom electrode of the present invention is not limited to said method, also can adopt additive method of the prior art.Afterwards, can adopt physical gas-phase deposite method or additive method well known in the art on bottom electrode 601, form magnetic layer 602, tunnel oxide 603 and upper magnetosphere 604 successively.
Step S2: as shown in Figure 7 and Figure 8, above described magnetic tunnel-junction 11, form first barrier layer 605 with cylinder open, this step specifically comprises:
The first barrier layer 605 is formed above described magnetic tunnel-junction 11;
Described first barrier layer 605 forms the first photoresist layer 6061, defines outer diameter shape and the size of annular magnetic tunnel junction;
With described first photoresist layer 6061 for the first barrier layer 605 described in mask etch, form cylinder open 12, wherein, the diameter of described cylinder open 12 is identical with the external diameter of described annular magnetic tunnel junction 11;
Remove described first photoresist layer 6061.
It should be noted that, described first barrier layer 605 at least comprises hard mask layer 6051 and etching anti-carve layer 6052.Described etching anti-carve layer 6052, between hard mask layer 6051 and magnetic tunnel-junction 11, for the protection of magnetic tunnel-junction 11, makes it not be damaged in etching process.When having etched hard mask layer 6051, etch process terminates in etching anti-carve layer 6052 automatically.Etching anti-carve layer 6052 is present in whole nanometer annular magnetic tunnel-junction processing procedure, its step S7 with described first medium layer for just together etched with first medium layer during magnetic tunnel-junction 11 described in mask etch.
Also it should be noted that, described hard mask layer 6051 is selected from one in silicon nitride, silica, amorphous carbon, the amorphous carbon of hydrogenation, low friction carbon or its combination, and described etching anti-carve layer 6052 is fire sand.Preferably; described hard mask layer 6051 comprises the first mask layer 6053 and the second mask layer 6054; described second mask layer 6054 is non-functional type carbon-coating; be covered in etching anti-carve layer 6052; this non-functional type carbon-coating is the volatile organic insulator that is heated, and therefore can be melted by ash easily after completing its due defencive function.
Step S3: as shown in Figure 9, deposits first medium layer 13 in described cylinder open 12 and grinding is flat.Described first medium layer 13 can be oxide layer, as silica.Deposit in described cylinder open 12 in the process of first medium layer 13 and have certain media and spill on hard mask layer 605, therefore need grinding first medium layer 13 to flush to hard mask layer 605.The technology of described grinding first medium layer 13 is the art personnel known technologies, in an embodiment of the present invention, adopts chemical-mechanical polishing mathing (CMP) equipment grinding first medium layer 13.
Step S4: as shown in Figure 10, above described first medium layer 13, form the second barrier layer 606, this step specifically comprises:
The second barrier layer 606 is formed above described first medium layer 13;
Described second barrier layer 606 forms the second photoresist layer 607, defines shape and the size of the interior ellipse of annular magnetic tunnel junction.
It should be noted that, the second barrier layer 606 is not only deposited on first medium layer 13, and also cover the hard mask layer 605 around first medium layer 13.Second barrier layer 606 comprises hard mask layer, and described hard mask layer can be silicon nitride, silica or other materials be applicable to, and described hard mask layer can be identical with the material of the first mask layer 6053.
It should be noted that, the axis of interior ellipse and the axis of cylinder open 12 are in two planes be parallel to each other or in same plane, and the central point of interior ellipse is on the axis of cylinder open 12.The major axis of interior ellipse meets 1:1 < A:B≤1:2 with the ratio A:B of minor axis.Preferably, A:B=1:2.The diameter range of cylinder open 12 is 100 ~ 300 nanometers, and the major axis scope of interior ellipse is 50 ~ 200 nanometers, and minor axis scope is 25 ~ 100 nanometers.Preferably, the diameter of cylinder open 12 is 200 nanometers, and the major axis of interior ellipse is 100 nanometers, and minor axis is 50 nanometers.
Step S5: as shown in figure 11, etches described second barrier layer 606, until run through described first medium layer 13, form elliptical cylinder-shape through hole 14, this step specifically comprises:
With described second photoresist layer 607 for the second barrier layer 606 described in mask etch, until run through described first medium layer 13;
Remove described second photoresist layer 607.
It should be noted that, run through the major axis of interior ellipse in the major axis of elliptical cylinder-shape through hole 14 of described first medium layer 13 and the size of minor axis and step S4 and the measure-alike of minor axis.When hard mask layer 605 comprises non-functional type carbon and silicon nitride, etch the second barrier layer 606 to first medium layer 13 to flush with the second mask layer 6054, together etch away by the second barrier layer 606 and silicon nitride layer, so that easily the second mask layer 6054 is removed when follow-up finishing first medium layer 13.
Step S6: as shown in figure 12, repairs described first medium layer 13, makes described first medium layer 13 form cylindrical peripheral, and wherein, the diameter of described cylinder open 12 is identical with the diameter of described cylindrical peripheral;
Step S7: as shown in figure 13, with described first medium layer 13 for magnetic tunnel-junction described in mask etch 11, until form circular cylinder oval in cylindrical.
It should be noted that, described finishing described first medium layer 13 comprises further to be repaired described first medium layer 13 by ashing method.Owing to being volatile second mask layer 6054 of heating around first medium layer 13, therefore removing easily via ashing, thus expose columniform periphery.The first medium layer 13 repaired is circular cylinder oval in cylindrical, the size of its cylindrical and interior ellipse and the measure-alike of the annular magnetic tunnel junction 11 that finally will be formed.
Also it should be noted that in the present invention that the process temperatures of all layer bodies be formed in above magnetic tunnel-junction 11 is all no more than 350 degrees Celsius.
Step S8: as shown in Figure 14 and Figure 15, deposits second dielectric layer 15 in described circular cylinder, and described second dielectric layer 15 is formed the top electrode 608 be covered on described magnetic tunnel-junction 11, and it comprises further:
With periphery deposition second dielectric layer 15 in the oval through hole of described circular cylinder;
Grind away unnecessary second dielectric layer 15, to expose the upper surface of magnetic tunnel-junction 11;
And form the top electrode 608 be covered in magnetic tunnel-junction 11 and second dielectric layer 15.
It should be noted that, in described circular cylinder, deposit second dielectric layer 15 to be included in the oval through hole of circular cylinder and the periphery deposition second dielectric layer 15 of circular cylinder, described second dielectric layer 15 is insulating material.Preferably, after deposition second dielectric layer 15, removed by grinding technics and to be covered in above magnetic tunnel-junction 11 and dielectric layer material unnecessary above second dielectric layer 15, to expose magnetic tunnel-junction, and make the upper surface of second dielectric layer 15 and the upper surface flush of magnetic tunnel-junction 11.Afterwards, the top electrode 608 be covered in described magnetic tunnel-junction and second dielectric layer 15 is formed.Top electrode 608 can by physical vapor deposition, chemical vapor deposition, mosaic technology or its be combined to form.
Refer to the structural representation of Figure 16 memory cell containing magnetic tunnel-junction of the present invention.This memory cell at least comprises: (as indicated by figures 5 a-5b) of the present invention magnetic tunnel-junction 11, top electrode 608, bottom electrode 601 and transistor 901.
It should be noted that, described transistor 901 is for controlling magnetic tunnel-junction read-write, and be device conventional in prior art, its structure does not repeat them here.In memory cell of the present invention, bit line 903 is coupled to magnetic tunnel-junction 11 via conductor 902 and top electrode 608, magnetic tunnel-junction 11 is coupled to transistor 901 by conductor 904, wordline 905 is coupled to transistor 901 by conductor (not shown), and transistor 901 is coupled with source electrode line 906 by conductor 907.
In sum, a kind of magnetic tunnel-junction of the present invention, its manufacture method and the memory cell containing magnetic tunnel-junction have following beneficial effect: the shape anisotropy feature that present invention utilizes magnetic tunnel-junction, produce the annular magnetic tunnel junction of interior oval cylindrical, oersted field assisting overturn in this oval ring structure and the easy formation of nuclei of reversed domain, critical current density is caused relatively to reduce, thus add the thermal stability of magnetic tunnel-junction and accelerate nuclei of reversed domain and formed and magnetic inversion, and reduce drive current density and critical electric current value and power consumption.Fig. 4 B shows magnetic field and the MR curves figure of the annular magnetic tunnel junction of elliptical shape in cylindrical of the present invention, compared by the magnetic field of the annular magnetic tunnel junction with the inner circle outer circular shape shown in Fig. 4 A can find out with MR curves figure, in cylindrical of the present invention, the magnetic field rollover states of the annular magnetic tunnel junction of elliptical shape is normal and controlled.So the present invention effectively overcomes various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.
Claims (17)
1. a nanometer annular magnetic tunnel-junction, is characterized in that, described nanometer annular magnetic tunnel-junction at least comprises:
Tunnel oxide (603), described tunnel oxide (603) material is metal oxide;
Upper magnetosphere (604), is arranged at the top of described tunnel oxide (603);
Magnetic layer (602), is arranged at the bottom of described tunnel oxide (603), and wherein, the periphery of described upper magnetosphere (604), described tunnel oxide (603) and described magnetic layer (602) is formed as cylinder;
Elliptical cylinder-shape through hole (60), vertically runs through described upper magnetosphere (604), described tunnel oxide (603) and described magnetic layer (602).
2. nanometer annular magnetic tunnel-junction according to claim 1, is characterized in that: the geometrical axis of described cylinder overlaps with the geometrical axis of described elliptical cylinder-shape through hole (60).
3. nanometer annular magnetic tunnel-junction according to claim 1 and 2, is characterized in that: be filled with dielectric layer in described elliptical cylinder-shape through hole (60).
4. nanometer annular magnetic tunnel-junction according to claim 1 and 2, is characterized in that: described cylinder is cylinder or Elliptic Cylinder.
5. nanometer annular magnetic tunnel-junction according to claim 1, it is characterized in that: described cylinder is cylinder, described cylindrical diameter range is 100 ~ 300 nanometers, and the major axis scope of described elliptical cylinder-shape through hole (60) is 50 ~ 200 nanometers, and minor axis scope is 25 ~ 100 nanometers.
6. nanometer annular magnetic tunnel-junction according to claim 1 and 2, is characterized in that: the major axis of described elliptical cylinder-shape through hole (60) meets 1:1 < A:B≤1:2 with the ratio A:B of minor axis.
7. nanometer annular magnetic tunnel-junction according to claim 1 and 2, it is characterized in that, described magnetic tunnel-junction also comprises top electrode (608) and bottom electrode (601), wherein, top electrode (608) is electrically connected with upper magnetosphere (604), and bottom electrode (601) is electrically connected with magnetic layer (602).
8. a manufacture method for nanometer annular magnetic tunnel-junction, it is characterized in that, the method comprises the following steps:
At the bottom-up magnetic tunnel-junction (11) comprising magnetic layer (602), tunnel oxide (603) and upper magnetosphere (604) successively of the upper formation of bottom electrode (601);
First barrier layer (605) with cylinder open (12) is formed in described magnetic tunnel-junction (11) top;
In described cylinder open (12), deposit first medium layer (13) and grind flat;
The second barrier layer (606) is formed in described first medium layer (13) top; Etch described second barrier layer (606), until run through described first medium layer (13), form elliptical cylinder-shape through hole (14);
Repair described first medium layer (13), make described first medium layer (13) form cylindrical peripheral, wherein, the diameter of described cylinder open (12) is identical with the diameter of described cylindrical peripheral;
With described first medium layer (13) for magnetic tunnel-junction described in mask etch (11), until form circular cylinder oval in cylindrical;
In described circular cylinder, deposit second dielectric layer (15), be covered in the top electrode (608) on described magnetic tunnel-junction (11) in the upper formation of described second dielectric layer (15).
9. the manufacture method of nanometer annular magnetic tunnel-junction according to claim 8, is characterized in that, form first barrier layer (605) with cylinder open (12) comprising in described magnetic tunnel-junction (11) top:
The first barrier layer (605) is formed in described magnetic tunnel-junction (11) top;
At upper formation first photoresist layer (6061) of described first barrier layer (605), define outer diameter shape and the size of annular magnetic tunnel junction;
With described first photoresist layer (6061) for the first barrier layer (605) described in mask etch, form cylinder open (12), wherein, the diameter of described cylinder open (12) is identical with the external diameter of described annular magnetic tunnel junction;
Remove described first photoresist layer (6061).
10. the manufacture method of nanometer annular magnetic tunnel-junction according to claim 8, is characterized in that, forms the second barrier layer (606) comprising in described first medium layer (13) top:
The second barrier layer (606) is formed in described first medium layer (13) top;
At upper formation second photoresist layer (607) of described second barrier layer (606), define shape and the size of the interior ellipse of annular magnetic tunnel junction.
The manufacture method of 11. nanometer annular magnetic tunnel-junctions according to claim 8, is characterized in that, etch described second barrier layer (606), comprising until run through described first medium layer (13):
With described second photoresist layer (607) for the second barrier layer (606) described in mask etch, until run through described first medium layer (13);
Remove described second photoresist layer (607).
The manufacture method of 12. nanometer according to claim 8 annular magnetic tunnel-junctions, is characterized in that: repair described first medium layer (13) and comprise further and being repaired described first medium layer (13) by ashing method.
The manufacture method of 13. nanometer annular magnetic tunnel-junctions according to claim 8, it is characterized in that, in described circular cylinder, deposit second dielectric layer (15), the top electrode (608) be covered on described magnetic tunnel-junction (11) in the upper formation of described second dielectric layer (15) comprises further:
With periphery deposition second dielectric layer (15) in the oval through hole of described circular cylinder;
Grind away unnecessary second dielectric layer (15), to expose the upper surface of magnetic tunnel-junction (11);
And form the top electrode (608) be covered in magnetic tunnel-junction (11) and second dielectric layer (15).
The manufacture method of 14. nanometer annular magnetic tunnel-junctions according to claim 8, is characterized in that: described first barrier layer (605) at least comprises hard mask layer (6051) and etching anti-carve layer (6052).
The manufacture method of 15. nanometer annular magnetic tunnel-junctions according to claim 14, it is characterized in that: described hard mask layer (6051) is selected from one in silicon nitride, silica, amorphous carbon, the amorphous carbon of hydrogenation, low friction carbon or its combination, and described etching anti-carve layer (6052) is fire sand.
The manufacture method of 16. nanometer annular magnetic tunnel-junctions according to claim 14, is characterized in that: described hard mask layer (6051) comprises non-functional type carbon.
17. 1 kinds comprise described in any one of claim 1-7 nanometer annular magnetic tunnel-junction memory cell.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310492822.1A CN104576919B (en) | 2013-10-18 | 2013-10-18 | Magnetic tunnel junction, manufacturing method thereof and storage unit containing magnetic tunnel junction |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310492822.1A CN104576919B (en) | 2013-10-18 | 2013-10-18 | Magnetic tunnel junction, manufacturing method thereof and storage unit containing magnetic tunnel junction |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104576919A true CN104576919A (en) | 2015-04-29 |
| CN104576919B CN104576919B (en) | 2017-05-17 |
Family
ID=53092522
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310492822.1A Active CN104576919B (en) | 2013-10-18 | 2013-10-18 | Magnetic tunnel junction, manufacturing method thereof and storage unit containing magnetic tunnel junction |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104576919B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107946456A (en) * | 2017-12-01 | 2018-04-20 | 北京航空航天大学 | A kind of magnetic tunnel-junction with strong perpendicular magnetic anisotropic |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101000821A (en) * | 2006-01-11 | 2007-07-18 | 中国科学院物理研究所 | Close-shaped magnetic multi-layer film and preparation method and use thereof |
| US20080089118A1 (en) * | 2006-10-13 | 2008-04-17 | Kabushiki Kaisha Toshiba | Magnetic random access memory and method of manufacturing the same |
| TWI313001B (en) * | 2003-04-23 | 2009-08-01 | Keio Universit | |
| CN102479920A (en) * | 2010-11-30 | 2012-05-30 | 中芯国际集成电路制造(上海)有限公司 | Manufacture method of nanometer annular magnetic tunnel structure and manufacture method of magnetic resistance internal memory |
| CN104465983A (en) * | 2013-09-17 | 2015-03-25 | 中芯国际集成电路制造(上海)有限公司 | Magnetic tunnel junction and formation method thereof |
-
2013
- 2013-10-18 CN CN201310492822.1A patent/CN104576919B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI313001B (en) * | 2003-04-23 | 2009-08-01 | Keio Universit | |
| CN101000821A (en) * | 2006-01-11 | 2007-07-18 | 中国科学院物理研究所 | Close-shaped magnetic multi-layer film and preparation method and use thereof |
| US20080089118A1 (en) * | 2006-10-13 | 2008-04-17 | Kabushiki Kaisha Toshiba | Magnetic random access memory and method of manufacturing the same |
| CN102479920A (en) * | 2010-11-30 | 2012-05-30 | 中芯国际集成电路制造(上海)有限公司 | Manufacture method of nanometer annular magnetic tunnel structure and manufacture method of magnetic resistance internal memory |
| CN104465983A (en) * | 2013-09-17 | 2015-03-25 | 中芯国际集成电路制造(上海)有限公司 | Magnetic tunnel junction and formation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| X.F. HAN 等: "Nanoelliptic Ring-Shaped Magnetic Tunnel Junction and Its Application in MRAM Design With Spin-Polarized Current Switching", 《IEEE TRANSACTIONS ON MAGNETICS》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107946456A (en) * | 2017-12-01 | 2018-04-20 | 北京航空航天大学 | A kind of magnetic tunnel-junction with strong perpendicular magnetic anisotropic |
| CN107946456B (en) * | 2017-12-01 | 2020-07-07 | 北京航空航天大学 | Magnetic tunnel junction with strong perpendicular magnetic anisotropy |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104576919B (en) | 2017-05-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10424727B2 (en) | Spin transfer torque cell for magnetic random access memory | |
| US10043967B2 (en) | Self-compensation of stray field of perpendicular magnetic elements | |
| JP3942930B2 (en) | Tunnel junction memory cell | |
| US10096649B2 (en) | Reducing or avoiding metal deposition from etching magnetic tunnel junction (MTJ) devices, including magnetic random access memory (MRAM) devices | |
| TWI622158B (en) | Storage element, storage device, method of manufacturing storage element, and magnetic head | |
| CN104425706A (en) | Reversed stack MTJ | |
| US20080030906A1 (en) | Magnetoresistive effect element and magnetic memory device | |
| KR102338319B1 (en) | Magnetic memory device and method for manufacturing the same | |
| JP2009531865A (en) | On-plug magnetic tunnel junction device using magnetization reversal by spin transfer torque | |
| JP2012186372A (en) | Semiconductor device and semiconductor device manufacturing method | |
| US20170178748A1 (en) | Magnetic element, skyrmion memory, skyrmion memory-device, solid-state electronic device, data-storage device, data processing and communication device | |
| JP5461683B2 (en) | Magnetic memory cell and magnetic random access memory | |
| US8729648B2 (en) | Magnetic body device and manufacturing method thereof | |
| KR20020054656A (en) | Magnetic random access memory | |
| CN102938257B (en) | Magnetic tunnel junction, its making method and magnetic tunnel junction-containing storage unit | |
| CN103887425A (en) | Magnetic junction, magnetic memory and method for providing magnetic junction | |
| US20220336728A1 (en) | Method of making bar-type magnetoresistive device | |
| CN101978426B (en) | Magnetically de-coupling magnetic memory cells and bit/word lines for reducing bit selection errors | |
| JP2005101605A (en) | Heat assisted change-over array construction for mram (magnetic random access memory) | |
| CN104659201B (en) | A kind of manufacturing method of resistance internal memory unit | |
| JP2004006713A (en) | Magnetic storage apparatus and manufacturing method thereof | |
| US20060097298A1 (en) | Magnetic random access memory with reduced currents in a bit line and manufacturing method thereof | |
| CN104576919A (en) | Magnetic tunnel junction, manufacturing method thereof and storage unit containing magnetic tunnel junction | |
| CN110352506B (en) | Ferromagnetic tunnel junction element and method of manufacturing the same | |
| US6787372B1 (en) | Method for manufacturing MTJ cell of magnetic random access memory |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |