CN103887425A - Magnetic junction, magnetic memory and method for providing magnetic junction - Google Patents
Magnetic junction, magnetic memory and method for providing magnetic junction Download PDFInfo
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- CN103887425A CN103887425A CN201310713668.6A CN201310713668A CN103887425A CN 103887425 A CN103887425 A CN 103887425A CN 201310713668 A CN201310713668 A CN 201310713668A CN 103887425 A CN103887425 A CN 103887425A
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 434
- 238000000034 method Methods 0.000 title claims abstract description 80
- 230000015654 memory Effects 0.000 title claims abstract description 49
- 125000006850 spacer group Chemical group 0.000 claims abstract description 86
- 239000000758 substrate Substances 0.000 claims abstract description 73
- 239000000463 material Substances 0.000 claims description 33
- 230000004888 barrier function Effects 0.000 claims description 32
- 230000008859 change Effects 0.000 claims description 18
- 230000005290 antiferromagnetic effect Effects 0.000 claims description 16
- 230000005641 tunneling Effects 0.000 claims description 6
- 230000005389 magnetism Effects 0.000 description 47
- 238000004519 manufacturing process Methods 0.000 description 21
- 230000005415 magnetization Effects 0.000 description 19
- 239000013078 crystal Substances 0.000 description 14
- 238000000151 deposition Methods 0.000 description 12
- 230000006872 improvement Effects 0.000 description 12
- 239000011435 rock Substances 0.000 description 12
- 230000008021 deposition Effects 0.000 description 11
- 230000008901 benefit Effects 0.000 description 9
- 239000004020 conductor Substances 0.000 description 7
- 239000012212 insulator Substances 0.000 description 7
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 230000005294 ferromagnetic effect Effects 0.000 description 5
- 239000000696 magnetic material Substances 0.000 description 5
- 244000287680 Garcinia dulcis Species 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000008030 elimination Effects 0.000 description 3
- 238000003379 elimination reaction Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 229910019236 CoFeB Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005308 ferrimagnetism Effects 0.000 description 2
- 230000005307 ferromagnetism Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000009987 spinning Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910004541 SiN Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
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- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
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Abstract
The invention provides magnetic junctions, a magnetic memory and a method for providing the magnetic junction. The magnetic junction includes a reference layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the reference layer and the free layer. The free layer, the nonmagnetic spacer layer and the reference layer form nonzero angle(s) with the substrate. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.
Description
Technical field
The present invention relates to a kind of magnetic knot, magnetic memory and the method for magnetic knot is provided on substrate.Background technology
Magnetic memory, especially, MAGNETIC RANDOM ACCESS MEMORY (MRAM), because of the potential of its high read/write speed during operation, good tolerance, non-volatile and low energy consumption aspect, and has caused increasing concern.MRAM can utilize magnetic material as information recording medium and storage information.A type of MRAM is spin transfer torque random access memory (STT-MRAM).STT-MRAM utilizes magnetic knot, and this magnetic knot is written into by the electric current that is driven through magnetic knot (driven through) at least in part.The spin polarized current that is driven through magnetic knot applies spinning moment to the magnetic moment in magnetic knot.As a result, there is the state that can convert expectation in response to one deck (or multilayer) of the magnetic moment of spinning moment to.
For example, Fig. 1 has described conventional MTJ (MTJ) 10, and it can be for conventional STT-MRAM.Conventional MTJ10 is usually located in bottom contact 11, uses conventional inculating crystal layer 12, and comprises conventional antiferromagnetic (AFM) layer 14, routine reference layer 16, conventional tunneling barrier layer 18, conventional free layer 20 and conventional cap rock 22.Also show top contact 24.
Conventional free layer 20 has variable magnetization 21.Although be depicted as simple layer, conventional free layer 20 also can comprise multiple layers.For example, conventional free layer 20 can be synthetic layer, and it comprises the multiple magnetospheres that are coupled by the thin conductive layer such as Ru antiferromagneticly or ferromagneticly.Although be shown as planar, the magnetization 21 of conventional free layer 20 can have perpendicular magnetic anisotropy.Therefore the magnetization 17 and 21 that, reference layer 16 and free layer 20 can make them is respectively perpendicular to the planar orientation of those layers.
In order to change the magnetization 21 of conventional free layer 20, electric current is driven perpendicular to plane (in Z direction).In the time contacting 11 bottom enough electric currents are driven into from top contact 24, the magnetization 21 of conventional free layer 20 can convert the magnetization 17 that is parallel to routine reference layer 16 to.In the time that enough electric currents are driven into top and contact 24 from bottom contact 11, the magnetization 21 of free layer can convert the magnetization that is antiparallel to reference layer 16 to.Difference aspect magnetic configuration (magnetic configuration) is corresponding to different magnetic resistance, thus for example, corresponding to the different logic state of conventional MTJ10 (, " 0 " and " 1 " in logic) in logic.Therefore, can determine the state of conventional MTJ by reading the tunnel magneto (TMR) of conventional MTJ10.
Although conventional MTJ10 can utilize spin transfer and write, and reads, and can use in STT-MRAM, still existent defect by the TMR of this knot of sensing.The area of coverage of for example, wishing conventional MTJ10 reduces that conventional MTJ is narrowed down to less size.The size that reduces conventional MTJ10 allows the surface density of the memory that adopts conventional magnetic knot 10 to increase.But the size that reduces conventional free layer 16 has reduced the amount of the magnetic material existing in free layer 16, can adversely affect thus thermal stability.The reduction of the thermal stability of conventional MTJ10 affect negatively conventional MTJ10 along with the time ability of storage data reliably in the past.Therefore, the performance of conventional MTJ is suffered a loss.
Therefore, need a kind of method and system, it can improve the performance of the memory based on spin transfer torque.Method and system described here has solved such needs.
Summary of the invention
A kind of method and system provides the magnetic that can use in magnetic device and be positioned on substrate knot.This magnetic knot comprises reference layer, nonmagnetic spacer layer and free layer.This nonmagnetic spacer layer is between reference layer and free layer.Free layer, nonmagnetic spacer layer and reference layer form non-zero angle with respect to substrate.This magnetic knot is configured such that free layer is convertible multiple stable magnetic state in the time that reset current is tied through magnetic.
Brief description of the drawings
Fig. 1 has described conventional magnetic knot.
The demonstration execution mode of the convertible vertical magnetism knot of spin transfer has been described to utilize in Fig. 2-3.
Fig. 4 has described to utilize another demonstration execution mode of the convertible vertical magnetism knot of spin transfer.
Fig. 5 has described to utilize the demonstration execution mode of the convertible vertical magnetism knot of spin transfer.
Fig. 6 has described to utilize another demonstration execution mode of convertible another vertical magnetism knot of spin transfer.
Fig. 7 has described to utilize another demonstration execution mode of convertible another vertical magnetism knot of spin transfer.
Fig. 8 has described to utilize another demonstration execution mode of the convertible vertical magnetism knot of spin transfer.
Fig. 9 has described to utilize another demonstration execution mode of the convertible vertical magnetism knot of spin transfer.
Another demonstration execution mode of the convertible vertical magnetism knot of spin transfer has been described to utilize in Figure 10-11.
Another demonstration execution mode of the convertible vertical magnetism knot of spin transfer has been described to utilize in Figure 12-13.
Figure 14 has described to utilize another demonstration execution mode of the convertible vertical magnetism knot of spin transfer.
Figure 15 has described to utilize another demonstration execution mode of the convertible vertical magnetism knot of spin transfer.
Another demonstration execution mode of spin transfer and the convertible vertical magnetism knot of domain wall motion has been described to utilize in Figure 16-17.
Figure 18 has described the demonstration execution mode of the memory that utilizes magnetic knot in the memory element of memory cell.
Figure 19 is flow chart, has described the demonstration execution mode of the manufacture method of utilizing the convertible vertical magnetism knot of spin transfer.
Figure 20 is flow chart, and the reference layer that utilizes the convertible vertical magnetism knot of spin transfer of having described demonstration execution mode is set to the demonstration execution mode of the method for two states.
Figure 21 is flow chart, has described the demonstration execution mode of the manufacture method of utilizing the convertible vertical magnetism knot of spin transfer.
The demonstration execution mode of the vertical magnetism knot during manufacture has been described in Figure 22-26.
Embodiment
Demonstration execution mode relates to and can be used for such as the magnetic knot in the magnetic devices of magnetic memory and the device that utilizes such magnetic to tie.Provide following description to make those of ordinary skill in the art can implement and use the present invention, and following description under the background that is provided in patent application and its necessary condition.For the demonstration different distortion of execution mode and General Principle described here and feature by easy apparition.Mainly at concrete method and the system aspects being provided in concrete enforcement, demonstration execution mode is described.But the method and system are by operation effectively in other enforcement.Phrase, can relate to identical or different execution mode and relate to multiple execution modes such as " demonstration execution mode ", " execution mode " and " another execution mode ".To execution mode be described about system and/or the device with specific components.But system and/or device can comprise than the system illustrating and/or the more or less assembly of device, can be made at the layout of assembly and the change of type aspect and not depart from scope of invention.Also will demonstration execution mode be described under the background of concrete grammar with particular step.But, for thering is different step and/or additional step and for having and the additive method of the step of demonstration execution mode inconsistent different order, the method and system are moved effectively.Therefore, the present invention is not intended to be limited to the execution mode illustrating, but meets the wide region consistent with principle described here and feature.
Method and system provides magnetic knot and has used the magnetic memory of magnetic knot.Magnetic knot comprises reference layer, nonmagnetic spacer layer and free layer.Nonmagnetic spacer layer is between reference layer and free layer.Free layer, nonmagnetic spacer layer and reference layer and substrate form the angle of non-zero degree.Magnetic knot is configured such that free layer is convertible between multiple stable magnetic state in the time that reset current flows through magnetic knot.
At specific magnetic knot with have under the background of magnetic memory of specific components and describe demonstration execution mode.Those of ordinary skill in the art will readily appreciate that the present invention and that have other and/or additional assembly and/or consistent with the magnetic knot of inconsistent other features of the present invention and the use of magnetic memory.The method and system are also described under the background of the current understanding for spin transfer phenomenon, magnetic anisotropy and other physical phenomenons.Therefore, those of ordinary skill in the art will readily appreciate that for the theory of the performance of the method and system and illustrate that the current understanding based on spin transfer, magnetic anisotropy and other physical phenomenons carries out.But the method described here and system do not rely on special physical interpretation.Those of ordinary skill in the art also will readily appreciate that the method and system a structure have with the background of the particular kind of relationship of substrate under be described.But those of ordinary skill in the art will readily appreciate that the method is consistent with other structure with system.For example, between multiple layers of magnetic knot and substrate below, can there are other angles except zero degree.In addition, the method and system are described under the background of synthetic and/or simple certain layer.But those of ordinary skill in the art will readily appreciate that these layers can have another structure.In addition, the method and system are at magnetic knot and/or have under the background of free layer of specific layer and be described.But those of ordinary skill in the art will readily appreciate that also can use the magnetic knot and/or the free layer that have from the method and the inconsistent extra and/or different layer of system.In addition, some parts is described to magnetic, ferromagnetic and ferrimagnetism.As used herein, term magnetic can comprise ferromagnetism, ferrimagnetism or similar structures.Therefore, as used herein, term " magnetic " or " ferromagnetism " include, but are not limited to ferromagnet and ferrimagnet.The method and system are also described under the background of single magnetic knot and free layer.But those of ordinary skill in the art will readily appreciate that the method and system and have many magnetic knots and utilize the use of magnetic memory of multiple free layers consistent.In addition, as used herein, " face in " is in fact in the plane of the one or more layers of magnetic knot or be parallel to the plane of the one or more layers of magnetic knot.Otherwise " vertically " is corresponding with the direction of one or more layers that is basically perpendicular to magnetic knot.
Perspective view and the sectional view of the demonstration execution mode that utilizes the convertible vertical magnetism knot 100 of spin transfer described respectively in Fig. 2-3.Magnetic knot can be for example MTJ (MTJ), Spin Valve or trajectory magnetoresistive structures, or its combination.Magnetic knot 100 can be for various application.For example, magnetic knot can be for magnetic memory, such as STT-MRAM.For clear, Fig. 2-3 are not in proportion.Magnetic knot comprises free layer 110, nonmagnetic spacer layer 120 and nailed layer or reference layer 130.Magnetic knot 100 is shown as and is positioned on substrate 102.In some embodiments, magnetic knot 100 can comprise inculating crystal layer and/or cap rock (not shown).
In the execution mode illustrating, free layer 110, nonmagnetic spacer layer 120 and reference layer 130 are basically perpendicular to the top surface of substrate 102.Therefore, the non-zero angle in Fig. 2-3 is 90 degree substantially.Therefore, the non-zero angle of magnetic knot 100 can be basic 90 degree in processing variation.In other embodiments, other angles are possible.In some embodiments, free layer 110, nonmagnetic spacer layer 120 and reference layer 130 have the angle of at least four ten five degree with respect to the top surface of substrate.In some such embodiments, the angle between layer 110,120 and 130 and substrate 102 is 80-90 degree.In other words, layer 110,120 and 130 is within ten degree perpendicular to substrate 102.
Free layer magnetic moment 111 utilizes spin transfer convertible, is therefore illustrated by double-head arrow 111.The magnetic moment 131 of reference layer 130 can be fixed on specific direction.In the execution mode illustrating, the magnetic moment 131 of reference layer 130 is in negative z direction.In another embodiment, magnetic moment 131 can be in positive z direction.In other embodiments, the magnetic moment of free layer 110 and/or reference layer 130 can be stablized on other direction.Therefore, other orientations of the magnetic moment of free layer 110 and/or reference layer 130 are possible.
Note, in the execution mode illustrating, magnetic moment 111 and 131 can be considered to be in the face of layer 110 and 130.The maximized surface of layer 110 and 130 is the surfaces around z axle. Magnetic moment 111 and 131 is also perpendicular to the direction between interface (, perpendicular to radial direction).Therefore,, for vertical magnetism knot 100, magnetic moment 111 and 131 is considered in face, even if magnetic moment 111 and 131 is perpendicular to substrate 102.
Although layer 110,120 and 130 illustrates with specific orientation, in other embodiments, this orientation can change.For example, reference layer 130 can more close magnetic Jie100 center.Also can use pinning layer (not shown).When reset current is through magnetic while tying 100, magnetic knot 100 is also configured to allow free layer 110 to change stablizing between magnetic state.Therefore, the magnetic moment 111 of free layer 110 utilizes spin transfer torque convertible.Because magnetic moment 111 is convertible, so magnetic moment 111 is represented by double-headed arrow.It should be noted that in some embodiments, magnetic field can be combined with to change with spin transfer torque the state of free layer 110.
Fig. 4 described to utilize the convertible vertical magnetism knot 100 of spin transfer ' another demonstration execution mode.For clear, Fig. 4 is not pro rata.Magnetic knot 100 ' be similar to magnetic to tie 100.Therefore, similar layer is similarly marked.Free layer 110 that magnetic knot 100 ' comprise is similar to respectively layer 110,120 and 130 ', nonmagnetic spacer layer 120 ' and reference layer 130 '.Free layer 110 ' and reference layer 130 ' be depicted as respectively has magnetic moment 111 ' and 131 '.In other embodiments, magnetic moment 111 ' and 131 ' another orientation can be there is.In addition, layer 110 ' and 130 ' in one or both can be synthetic anti-ferromagnetic layer or other multilayers.Although layer 110 ', 120 ' and 130 ' illustrate with specific orientation, in other embodiments, this orientation can change.For example, reference layer 130 ' can be more close magnetic knot 100 ' center.In some embodiments, can comprise optional inculating crystal layer (not shown), optional pinning layer (not shown) and/or optional cap rock (not shown).Free layer 110 ' magnetization utilize spin transfer torque convertible.
Fig. 4 represented for magnetic knot 100 or 100 ' the possible direction that flows of reset current.If electric current perpendicular to layer 110 ', 120 ' and 130 ' plane flow, perpendicular to the reset current i of plane
cppfrom free layer 110 ' radially flow to reference layer 130 ', or vice versa.Therefore, although i
cppoutwards be depicted as and flow, but electric current can inwardly flow, towards the central shaft of magnetic knot.In some embodiments, magnetic knot 100 ' free layer 110 ' top surface or bottom surface there is a contact (not shown in Fig. 4).In other embodiments, contact can free layer 110 ' center (for example,, along central shaft).In some embodiments, another contact reference layer 130 ' basal surface or top surface.In other embodiments, another contact around reference layer 130 ' outside.If electric current layer 110 ', 120 ' and 130 ' plane in flow, the reset current i of electric current in face
cipvertically flow on (along z axle).Therefore, although i
cipbe shown in negative z direction and flow, but electric current can flow to change the state of free layer in positive z direction.
As discussed above, magnetic knot 100 ' be vertical magnetism knot.As a result, layer 110 ', 120 ' and 130 ' about substrate 102 ' have non-zero angle.But in execution mode shown in Figure 4, the sidewall of magnetic knot is not completely vertical.Instead, sidewall is about z axle angulation θ.In some embodiments, θ is no more than ten degree.In some such embodiments, θ is within zero treatment limits scope.
Magnetic knot 100 ' can share the benefit of magnetic knot 100.Particularly, magnetic knot 100 ' can expand to higher surface density.For example, magnetic knot 100 ' can there is acceptable performance and thermal stability under the diameter that is less than ten nanometers.In addition magnetic knot 100, ' can there is the resistor area product (RA) of better control.Therefore, magnetic knot 100 ' can there is the performance of improvement.
Fig. 5 has described to utilize the convertible vertical magnetism knot 100 of spin transfer " another demonstration execution mode.For clear, Fig. 5 is not pro rata.Magnetic knot 100 " be similar to magnetic knot 100 and 100 '.Therefore, similar layer is similarly marked.Magnetic knot 100 " comprise be similar to respectively layer 110/110 ', 120/120 ' and 130/130 ' free layer 110 ", nonmagnetic spacer layer 120 " and reference layer 130 ".Free layer 110 " and reference layer 130 " is depicted as respectively has magnetic moment 111 " and 131 ".In other embodiments, magnetic moment 111 " and 131 " can have another orientation.In addition, in layer 110 " and 130 " or both can be synthetic anti-ferromagnetic layer or other multilayers.Although layer 110 ", 120 " and 130 " illustrate with specific orientation, in other embodiments, this orientation can change.In some embodiments, can comprise optional inculating crystal layer (not shown), optional pinning layer (not shown) and/or optional cap rock (not shown).Free layer 110 " magnetization utilize spin transfer torque convertible.Magnetic knot 100 " is vertical magnetism knot.Therefore, layer 110 ", 120 " and 130 " about substrates 102 " have non-zero angle.In the execution mode illustrating, layer 110 ", 120 " and 130 " being basically perpendicular to substrate 102 ".But in other embodiments, other non-zero angle are possible.
The center of magnetic knot 100 " at magnetic knot 100 " has its reference layer 130 ".Free layer 110 ' be positioned at magnetic knot 100 " outer edge.Nonmagnetic spacer layer 120 " still remains on free layer 110 " and reference layer 130 " between.
Vertical magnetism knot 100,100 " ', 100 " " and 100 " has been described in Fig. 6-9 " ' the plane graph of demonstration execution mode.For clear, Fig. 6-9 are not in proportion.It is 100 identical that magnetic shown in Fig. 6 knot 100 magnetic that can be considered to describe with Fig. 2-3 are tied.Therefore, magnetic knot 100 has the circular area of coverage.Therefore, magnetic knot 100 can be cylinder.Magnetic knot 100 " ', 100 " " and 100 " " ' be similar to magnetic knot 100,100 ' and 100 ".Therefore, similar layer is similarly marked.Magnetic knot 100 " ', 100 " " and 100 " " ' each free layer 110 that comprises respectively " ', 110 " " and 110 " " ', nonmagnetic spacer layer 120 " ' 120 " " and 120 " " '; and reference layer 130 " ', 130 " " and 130 " " ', it is similar to respectively layer 110/110 '/110 ", 120/120 '/120 " and 130/130 '/130 ".Free layer 110 " '/110 " "/110 " " ' and reference layer 130 " '/130 " "/130 " " ' be depicted as respectively have magnetic moment 111 " '/111 " "/111 " " ' and 131 " '/131 " "/131 " " '.In other embodiments, magnetic moment 111 " '/111 " "/111 " " ' and 131 " '/131 " "/131 " " ' can there is another orientation.In addition ,/130 " "/130 " ", layer 110 " '/110 " "/110 " " ' and 130 " ' in one or both can be synthetic anti-ferromagnetic layer or other multilayers.Although '/120 " "/120 " ", layer 110 " '/110 " "/110 " " ', 120 " ' and 130 " '/130 " "/130 " " ' illustrate with specific orientation, in other embodiments, this orientation can change.In some embodiments, can comprise optional inculating crystal layer (not shown), optional pinning layer (not shown) and/or optional cap rock (not shown).Free layer 110 " '/110 " "/110 " " ' magnetization 111 " '/111 " "/111 " " ' utilize spin transfer torque convertible.Magnetic knot 100 " '/100 " "/100 " " ' be vertical magnetism knot.Therefore, '/120 " "/120 " ", layer 110 " '/110 " "/110 " " ', 120 " ' and '/102 " "/102 " ", 130 " '/130 " "/130 " " ' with respect to substrate 102 " ' have non-zero angle.
End view and the plane graph of another demonstration execution mode that utilizes the convertible vertical magnetism knot 200 of spin transfer described in Figure 10-11.For clear, Figure 10-11 are not in proportion.Magnetic knot 200 be similar to magnetic knot 100,100 ', 100 ", 100 " ', 100 " " and 100 " " '.Therefore, similar layer is similarly marked.Magnetic knot 200 comprises free layer 210, nonmagnetic spacer layer 220 and reference layer 230, be similar to respectively layer 110/110 '/110 "/110 " '/110 " "/110 " " ', 120/120 '/120 "/120 " '/120 " "/120 " " ' and 130/130 '/130 "/130 " '/130 " "/130 " " '.Although layer 210,120 and 230 illustrates with specific orientation, in other embodiments, this orientation can change.For example, reference layer 230 can be positioned at magnetic Jie200 center, and free layer 210 is positioned at periphery.In some embodiments, can comprise optional inculating crystal layer (not shown), optional pinning layer (not shown) and/or optional cap rock (not shown).The magnetization of free layer 210 utilizes spin transfer torque convertible.Magnetic knot 210 is vertical magnetism knots.Therefore, layer 210,220 and 230 has non-zero angle with respect to substrate 202.In the execution mode illustrating, layer 210,220 and 230 is basically perpendicular to substrate 202.But in other embodiments, other non-zero angle are possible.In addition, magnetic knot 200 is shown as and has circular coverage area.But in other embodiments, the area of coverage of magnetic knot 200 can have another shape, includes but not limited to ellipse, square and rectangle.Free layer 210 is described to have the simple layer of magnetic moment 211.In other embodiments, magnetic moment 211 can have another orientation.In addition, free layer 210 can be synthetic anti-ferromagnetic layer or other multilayers.
Figure 12-13 described to utilize the convertible vertical magnetism knot 200 of spin transfer ' end view and the plane graph of another demonstration execution mode.For clear, Figure 12-13 are not in proportion.Magnetic knot 200 ' be similar to magnetic knot 100,100 ', 100 ", 100 " ', 100 " ", 100 " " ' and 200.Therefore, similar layer is similarly marked.Free layer 210 that magnetic knot 200 ' comprise is similar to respectively layer 210,220 and 230 ', nonmagnetic spacer layer 220 ' and reference layer 230 '.Although layer 210 ', 120 ' and 230 ' illustrate with specific orientation, in other embodiments, this orientation can change.In some embodiments, can comprise optional inculating crystal layer (not shown), optional pinning layer (not shown) and/or optional cap rock (not shown).Free layer 210 ' magnetization utilize spin transfer torque convertible.Magnetic knot 210 ' be vertical magnetism knot.Therefore, layer 210 ', 220 ' and 230 ' with respect to substrate 202 ' have non-zero angle.In the execution mode illustrating, layer 210 ', 220 ' and 230 ' be basically perpendicular to substrate 202 '.But in other embodiments, other non-zero angle are possible.In addition magnetic knot 200, ' be shown as has circular coverage area.But, in other embodiments, magnetic knot 200 ' the area of coverage can there is another shape, include but not limited to ellipse, square and rectangle.Free layer 210 ' and reference layer 230 ' be described to there is magnetic moment 211 ' and 231 ' simple layer.In other embodiments, magnetic moment 211 ' and 231 ' another orientation can be there is.In addition, free layer 210 ' and/or reference layer 230 ' can be synthetic inverse ferric magnetosphere or other multilayers.
Magnetic knot 200 ' also comprise and add nonmagnetic spacer layer 240 and the additional reference layer 245 with magnetic moment 246.Therefore, free layer 210 ' in nonmagnetic spacer layer 220 ' and between 240 and at reference layer 230 ' and between 245.Magnetic moment 231 ' and 246 anti-parallel alignment, therefore in two states.
Magnetic knot 200 ' can share magnetic knot 100,100 ', 100 ", 100 " ', 100 " ", 100 " " ' and/or benefit of 200.Particularly, magnetic knot 200 ' can expand to higher surface density.For example, magnetic knot 200 ' can there is acceptable performance and thermal stability under the diameter that is less than ten nanometers.In addition magnetic knot 200, ' can there is the resistor area product (RA) of better control.In addition, magnetic knot 200 ' can there is the stray magnetic field reducing.Two reference layers 230 ' and 245 magnetic moments 231 with anti-parallel alignment ' and 246.As from magnetic knot 200 ' the magnetic flux line of Base top contact, from reference layer 230 ' and 245 field in the basic elimination of free layer 210 ' locate.Magnetic knot 200 ' stability can strengthen.Thereby, magnetic knot 200 ' can there is the performance of improvement.
Figure 14 has described to utilize the convertible vertical magnetism knot 200 of spin transfer " the end view of another demonstration execution mode.For clear, Figure 14 is not pro rata.Magnetic knot 200 " be similar to magnetic knot 100,100 ', 100 ", 100 " ', 100 " ", 100 " " ', 200 and/or 200 '.Therefore, similar layer is similarly marked.Magnetic knot 200 " comprise be similar to respectively layer 210/210 ', 220/220 ' and 230/230 ' free layer 210 ", nonmagnetic spacer layer 220 " and reference layer 230 ".Although layer 210 ", 220 " and 230 " illustrate with specific orientation, in other embodiments, this orientation can change.In some embodiments, can comprise optional inculating crystal layer (not shown), optional pinning layer (not shown) and/or optional cap rock (not shown).Free layer 210 " magnetization utilize spin transfer torque convertible.Magnetic knot 210 " is vertical magnetism knot.Therefore, layer 210 ", 220 " and 230 " with respect to substrates 202 " have non-zero angle.In the execution mode illustrating, layer 210 ", 220 " and 230 " being basically perpendicular to substrate 202 ".But in other embodiments, other non-zero angle are possible.The simple layer of " and 231 " that free layer 210 " and reference layer 230 " is described to have magnetic moment 211.In other embodiments, magnetic moment 211 " and 231 " can have another orientation.In addition, free layer 210 " and/or reference layer 230 " can be synthetic inverse ferric magnetosphere or other multilayer.
Can tie 200 in magnetic by the height that utilizes free layer 210 " and reference layer 230 " " in the flux closure of improvement is provided.As visible in Figure 14, the height d of free layer 210 " height h be less than reference layer 230 ".In addition, upper surface and the lower surface of free layer 210 " upper surface and lower surface depart from respectively reference layer 230 ".Height and the position difference of upper and lower surface have reduced at reference layer 230 " upper surface and lower surface on the effect of magnetic charge.Therefore, can improve the elimination of stray magnetic field.
Figure 15 has described to utilize the convertible vertical magnetism knot 200 of spin transfer " ' the end view of another demonstration execution mode.For clear, Figure 15 is not pro rata.Magnetic knot 200 " ' be similar to magnetic knot 100,100 ', 100 ", 100 " ', 100 " ", 100 " " ', 200,200 ' and/or 200 ".Therefore, similar layer is similarly marked.Magnetic knot 200 " ' comprise free layer 210 " ', nonmagnetic spacer layer 220 " ' and reference layer 230 " ', be similar to respectively layer 210/210 '/210 ", 220/220 '/220 " and 230/230 '/230 ".Although layer 210 " ', 220 " ' and 230 " ' illustrate with specific orientation, in other embodiments, this orientation can change.For example, reference layer 230 " ' can be in centralized positioning, and free layer 210 " ' at periphery.In some embodiments, can comprise optional inculating crystal layer (not shown), optional pinning layer (not shown) and/or optional cap rock (not shown).Free layer 210 " ' magnetization utilize spin transfer torque convertible.Magnetic knot 210 " ' be vertical magnetism knot.Therefore, layer 210 " ', 220 " ' and 230 " ' non-zero angle there is with respect to substrate (not shown in Figure 15).In the execution mode illustrating, layer 210 " ', 220 " ' and 230 " ' be basically perpendicular to substrate.But in other embodiments, other non-zero angle are possible.Free layer 210 " ' and reference layer 230 " ' be described to there is magnetic moment 211 " ' and 231 " ' simple layer.In other embodiments, magnetic moment 211 " ' and 231 " ' can there is another orientation.In addition, free layer 210 " ' and/or reference layer 230 " ' can be synthetic inverse ferric magnetosphere or other multilayers.
The end view of another demonstration execution mode that utilizes the convertible vertical magnetism knot 250 of spin transfer has been described in Figure 16-17.For clear, Figure 16-17 are not in proportion.Magnetic knot 250 be similar to magnetic knot 100,100 ', 100 ", 100 " ', 100 " ", 100 " " ', 200,200 ', 200 " and/or 200 " '.Therefore, similar layer is similarly marked.Magnetic knot 250 comprises free layer 260, nonmagnetic spacer layer 270 and reference layer 280, be similar to respectively layer 110/110 '/110 "/110 " '/110 " "/110 " " '/210/210 '/210 "/210 " ', 120/120 '/120 "/120 " '/120 " "/120 " " '/220/220 '/220 "/220 " ' and 130/130 '/130 "/130 " '/130 " "/130 " " '/230/230 '/230 "/230 " '.Although layer 260,270 and 280 illustrates with specific orientation, in other embodiments, this orientation can change.For example, reference layer 280 can be positioned at magnetic Jie250 center, and free layer 260 is positioned at periphery.In some embodiments, can comprise optional inculating crystal layer (not shown), optional pinning layer (not shown) and/or optional cap rock (not shown).The magnetization of free layer 260 utilize spin transfer torque and below discuss domain wall motion convertible.Magnetic knot 250 is vertical magnetism knots.Therefore, layer 260,270 and 280 has non-zero angle with respect to substrate 252.In the execution mode illustrating, layer 260,270 and 280 is basically perpendicular to substrate 252.But in other embodiments, other non-zero angle are possible.In addition, magnetic knot 250 can have the circular area of coverage.But in other embodiments, the area of coverage of magnetic knot 250 can have another shape, includes but not limited to ellipse, square and rectangle.Free layer 260 and reference layer 280 are described to simple layer.In addition, free layer 260 and/or reference layer 280 can be synthetic inverse ferric magnetosphere or other multilayers.
Due to the existence of domain wall motion barrier 262, free layer 260 has domain wall at any one barrier 262 place, thus magnetic stability.In the execution mode shown in Figure 16, domain wall is positioned at top barrier 262 places.If free layer 260 is switched to another state, can apply in CPP reset current (in Figure 16 laterally) or CIP(Figure 16 longitudinally) reset current.In some embodiments, by spin transfer torque and complementary field, domain wall is moved.Therefore, as shown in figure 17, domain wall moves on to bottom barrier 262.Therefore, free layer 260 comprises and magnetic moment 263 ' and 264 ' corresponding farmland.Can be reflected in the locational variation of domain wall on the resistance of magnetic knot 250.
Vertical magnetism knot 100,100 ', 100 ", 100 " ', 100 " ", 100 " " ', 200,200 ', 200 " and/or 250 can be for magnetic memory.Figure 18 has described the demonstration execution mode of such memory 300.Magnetic memory 300 comprises read/write column selection driver 302 and 306 and word line options driver 304.It should be noted that other and/or different assemblies can be provided.The memory block of memory 300 comprises magnetic cell 310.Each magnetic cell comprises at least one magnetic knot 312 and at least one selector 314.In some embodiments, selector 314 is transistors.Magnetic knot 312 can comprise magnetic knot 100,100 ', 100 ", 100 " ', 100 " ", 100 " " ', 200,200 ', 200 ", 200 " ' and/or 250 in one or more.Although each unit 310 illustrates a magnetic knot 312, in other embodiments, each unit can provide the magnetic knot 312 of another quantity.
Because magnetic memory 300 utilize magnetic knot 100,100 ', 100 ", 100 " ', 100 " ", 100 " " ', 200,200 ', 200 ", 200 " ' and/or 250, so performance can improve and magnetic memory 300 can expand to higher surface density.Particularly, can use less magnetic knot 310 to keep the thermal stability of memory 300 simultaneously.
Figure 19 is flow chart, has described the demonstration execution mode for the manufacture of the method 400 of vertical magnetism knot, and this vertical magnetism knot utilizes spin transfer convertible.Because of the method 400 can tie 100,100 for the manufacture of magnetic ', 100 ", 100 " ', 100 " ", 100 " " ', 200,200 ', 200 ", 200 " ' and/or 250 in one or more.Method 400 is described under the background of magnetic knot 100.But method 400 can be tied use in other magnetic.In addition, method 400 can be incorporated in the manufacture of magnetic memory.Therefore, method 400 can be for the manufacture of STT-MRAM300 or other magnetic memories.Method 400 also can comprise optional inculating crystal layer, optional cap rock and optional pinning layer (not shown) are set.For the sake of simplicity, can omit some steps.In addition, the step of method 400 can combine, carries out and/or be decomposed with another order.In addition, although method 400 is described under the background that forms single magnetic knot, common multiple magnetic knots walk abreast and form.
Provide free layer 110 by step 402, it forms non-zero angle with respect to substrate 202.Step 402 can comprise that the material of deposition of desired reaches the expectation thickness of free layer 110.Step 402 can comprise provides SAF or other multilayers.In some embodiments, step 402 can comprise free layer 110 is provided as to column structure.This column structure can be formed on maybe can has the contact on the top that is formed on column structure in lower contact, its after manufacture.In some embodiments, the free layer forming in step 402 can be circulus.
Provide nonmagnetic layer 120 by step 404.Step 404 can comprise the nonmagnetic substance of deposition of desired, includes but not limited to crystalline MgO.Other techniques can be also parts for step 204.For example, metal M g can be deposited, be then naturally oxidized or by plasma oxidation with form crystalline MgO barrier layer.In addition, material that can deposition of desired thickness in step 404.For example, step 404 can comprise provides crystalline MgO, and it is enough thin using as tunneling barrier.Provide reference layer 130 by step 406.Step 406 can comprise that the material of deposition of desired reaches the expectation thickness of reference layer 130.In addition, step 406 can comprise provides SAF.In some embodiments, step 406 can be carried out by being formed as circulus with reference to layer 130.In other embodiments, the magnetic Jie center that reference layer 130 can form.In some such embodiments, step 406 can be carried out before step 402 and 404.
Then can complete by step 408 manufacture of magnetic knot 100.For example, if the magnetic forming knot is double structure, can in step 408, form remaining nonmagnetic spacer layer and reference layer.In addition, can set the magnetic moment of reference layer.In addition can manufacture, contact and other parts of memory.
In some embodiments, in step 402, can first form contact, free layer material can be deposited as one deck in contact.Material for nonmagnetic spacer layer 120 and reference layer 130 is also deposited, as a part for step 404 and 406.In the later stage of manufacturing, free layer material, non-magnetic spacer layer material and the reference layer material of part can be removed from the top that contacts and the region that is adjacent to this contact.Therefore, the circulus of free layer 110, nonmagnetic spacer layer 120 and the each surface that can be formed in lower floor of reference layer 130.Alternatively, free layer material can be deposited in groove, is removed at a part of free layer material at the base portion place of this groove.Similarly, the residue that non-magnetic spacer layer material can be deposited on groove is not in filling part.Part non-magnetic spacer layer material at channel bottom is also removed.Then, reference layer material can be deposited, and is removed in the part of channel bottom.Finally, center contact (if any) can be filled this groove.In such execution mode, external contact can be deposited before free layer is provided.But, in this method, generally under deposition before one deck, be removed at the layer of the part of groove base portion, with the possibility of the short circuit of the knot that reduces current distributing or formed.
Utilize method 400, can manufacture magnetic knot 100,100 ', 100 ", 100 " ', 100 " ", 100 " " ', 200,200 ', 200 ", 200 " ' and/or 250 in one or more, and magnetic memory 300.Therefore, can realize magnetic knot 100,100 ', 100 ", 100 " ', 100 " ", 100 " " ', 200,200 ', 200 ", 200 " ', 250 and/or 310 benefit.
Figure 20 is flow chart, has described the demonstration execution mode for the manufacture of the method 420 of vertical magnetism knot, and this vertical magnetism knot utilizes spin transfer convertible.More specifically, method 420 is for setting pair direction of magnetization of the reference layer of magnetic knot.Therefore, method 420 can be used for manufacturing magnetic knot 200 '.Method 420 magnetic knot 200 ' background under be described.But method 420 can be tied use in other magnetic.In addition, method 420 can be incorporated to magnetic memory, in the manufacture such as STT-MRAM300 or other magnetic memories.In some embodiments, the step of method 420 can combine, carries out and/or be decomposed with another order.In some embodiments, only have when magnetic moment 231 ' and 246 when anti-bifurcation (aiming in single direction) manner of execution 420.But, in other embodiments, method 420 can from along reference layer 230 ' and 245 easy magnetizing axis apply large magnetic field to aim at magnetic moment 231 ' and in the of 246.
By step 422, perpendicular to magnetic moment 231 ' and 246 expect pinned direction apply highfield.Highfield is enough to make magnetic moment 231 ' and 246 aim at along hard axis.
Then magnetic field tilts to decline by step 424.Magnetic field enough reduces slowly, makes magnetic moment 231 ' relaxation in response to this magnetic field if having time.Therefore the required time of magnetic field that, reduces to apply in step 422 is more than or equal to magnetic moment 231 ' and time constant of 246.As a result, magnetic moment 231 ' and 246 formation shearing states.Finally remove magnetic field by step 426.Then, magnetic moment 231 ' and 246 ' can relaxation be anti-bifurcation.Therefore, utilize the method 420, reference layer 230 ' and 245 can be set as expect state.
Figure 21 is flow chart, has described the demonstration execution mode for the manufacture of the method 450 of vertical magnetism knot, and this vertical magnetism knot utilizes spin transfer convertible.Method 450 can be therefore for the manufacture of magnetic knot 100,100 ', 100 ", 100 " ', 100 " ", 100 " " ', 200,200 ', 200 ", 200 " ' and/or 250 in one or more.An execution mode of vertical magnetism knot 500 during utilizing the method 450 to form has been described in Figure 22-24.For clear, Figure 22-24 are not in proportion.The method 450 is described under the background of magnetic knot 550.But method 450 can be tied use in other magnetic.In addition, method 450 can be incorporated in the manufacture of magnetic storage.Therefore, method 450 can be for the manufacture of STT-MRAM300 or other magnetic memories.Method 450 also can comprise provides optional inculating crystal layer, optional cap rock and optional pinning layer (not shown).For the sake of simplicity, can omit some steps.In addition, the step of method 450 can combine, carries out and/or be decomposed with another order.In addition, although method 450 is described under the background that forms single magnetic knot, common multiple magnetic knots walk abreast and form.Method 450 is also described under the background that the magnetic knot with center free layer is provided.But in other embodiments, method 450 can be adjusted to provide the not free layer in centralized positioning.In addition, method 450 is tied to have under the background of CPP electric current and is described manufacturing magnetic.But method 450 can be suitable for utilizing the magnetic knot of CIP electric current.
Deposit contact layer by step 452.By step 454, formed by contact layer for the contact stud of magnetic knot.In some embodiments, in step 452, deposition can be by the full film of the electric conducting material of reactive ion etching, such as TiN and/or W.Then provide and covered the mask that is about to the region that forms contact, the expose portion of contact layer utilizes for example reactive ion etching to be removed.In other embodiments, can be provided in the mask in the region that is about to form contact with hole.Electric conducting material is deposited, and mask is removed.Therefore, formed center contact.Figure 22 has described the magnetic knot 500 after having carried out step 452 and 454.Therefore, TiN contact 504 has been formed on substrate 502.In the execution mode illustrating, substrate 502 can be another layer of previously having manufactured simply.In addition, also show conductor 503.Conductor 503 can be the line that is electrically connected to contact 504 for providing.
Free layer material is deposited by step 456.Step 456 can comprise the multiple layers of deposition for multilayer free layer.In some embodiments, CoFeB can be for free layer.This deposition can utilize angle-tilt ion bundle deposition or sputter to carry out.
Non-magnetic spacer layer material is deposited by step 458.In addition, step 458 can comprise manufacturing to have the crystalline MgO barrier layer of expecting orientation.In some embodiments, MgO barrier layer can be sputtered.
Reference layer material is deposited by step 460.Step 460 can comprise the multiple layers of deposition for multilayer reference layer.In some embodiments, CoFeB can be for reference layer.Figure 23 has described the magnetic knot 500 after having carried out step 460.Therefore, show free layer 510, nonmagnetic spacer layer 520 and reference layer 530.
Then, magnetic knot 500 is defined by step 462.Step 462 comprises from the top surface of cylindricality contact removes a part of free layer material, non-magnetic spacer layer material and reference layer material.In addition, these materials are removed from the region that is adjacent to cylindricality contact.In some embodiments, step 462 is utilized from the preferential technology of removing such material in smooth (level) surface and is carried out.For example, can use the ion milling (ion mill) carrying out in the surperficial direction that is basically perpendicular to substrate 502.Alternatively, can use reactive ion etching.Therefore, magnetic knot 500 is defined.Figure 24 has described the magnetic knot 500 after having carried out step 462.Therefore, formed free layer 510 ', nonmagnetic spacer layer 520 ' and reference layer 530 '.It should be noted that the only layer 510 of contact center contact 504 and adjacency of lower conductor 503 '.
By step 464, insulator provides above the desired region of magnetic knot 500.Step 464 can comprise that deposition insulator is such as SiO
2, SiN, SiO or aluminum oxide.In addition, can remove the less desirable part of insulator.The insulator providing in step 464 can prevent that magnetic from tying 500 short circuits and preventing from being about to the external contact and the free layer 510 that form ' contact.Figure 25 has described the magnetic knot 500 after having carried out step 464.Therefore, show insulator 542,544 and 540.In some embodiments, insulator 542,544 and 540 is all formed by identical layer.
Then form external contact by step 466.Step 466 can comprise full film depositing conducting layer and remove the selected portions of this layer.Figure 26 has described the magnetic knot 500 after having carried out step 466.Therefore, formed conductor 550.As shown in Figure 2, electric current can be between contact 504 and 550 by layer 510 ', 520 ' and 530 ' flow.
Describe for providing vertical magnetism to tie and use the method and system of the memory of this magnetic knot.The method and system the demonstration execution mode shown in basis are described, and those of ordinary skill in the art will readily appreciate that and can change execution mode, change in the spirit and scope of the method and system arbitrarily.Therefore, those of ordinary skill in the art can make many improvement and not depart from the spirit and scope of accessory claim.
The application requires to enjoy the U.S. Provisional Patent Application No.61/745 that the name of submitting on December 21st, 2012 is called " METHOD AND SYSTEM FOR PROVIDING VERTICAL SPIN TRANSFER SWITCHED MAGNETIC JUNCTIONS AND MEMORIES USING SUCH JUNCTIONS ", 542 rights and interests, it is combined in this by reference.
Claims (52)
1. a magnetic knot, it uses and is positioned on substrate in magnetic device, and this magnetic knot comprises:
Reference layer;
Nonmagnetic spacer layer; With
Free layer, described nonmagnetic spacer layer is between described free layer and described reference layer, and described free layer, described nonmagnetic spacer layer and described reference layer form at least one non-zero angle with respect to described substrate;
Described in when wherein said magnetic knot is configured such that reset current through described magnetic knot, free layer is convertible multiple stable magnetic state.
2. magnetic knot as claimed in claim 1, wherein said non-zero angle is greater than 45 degree.
3. magnetic knot as claimed in claim 1, wherein said free layer, described nonmagnetic spacer layer and described reference layer are basically perpendicular to described substrate.
4. magnetic knot as claimed in claim 3, wherein said nonmagnetic spacer layer is basically perpendicular to described substrate.
5. magnetic knot as claimed in claim 1, wherein said free layer is to have to be basically perpendicular to the axle of described substrate and the column of multiple sidewalls.
6. magnetic knot as claimed in claim 5, the contiguous described multiple sidewalls of wherein said nonmagnetic spacer layer.
7. magnetic knot as claimed in claim 6, wherein said magnetic knot has circular cross-section.
8. magnetic knot as claimed in claim 6, wherein said magnetic knot has the cross section of selecting from circular, ellipse, square and rectangle.
9. magnetic knot as claimed in claim 1, wherein said reference layer is synthetic anti-ferromagnetic layer.
10. magnetic knot as claimed in claim 1, wherein said free layer is synthetic anti-ferromagnetic layer.
11. magnetic knots as claimed in claim 1, also comprise:
Additional nonmagnetic spacer layer; With
Additional reference layer, described free layer is between described nonmagnetic spacer layer and described additional nonmagnetic spacer layer, described additional nonmagnetic spacer layer is between described additional reference layer and described free layer, and described additional reference layer and described additional nonmagnetic spacer layer form at least one additional non-zero angle with respect to described substrate.
12. magnetic knots as claimed in claim 1, wherein said free layer has the first height in the direction perpendicular to described substrate, and described reference layer upwards has the second height the party, and described first is highly less than described the second height.
13. magnetic knots as claimed in claim 12, wherein said free layer separates the first distance with described substrate, and described reference layer separates second distance with described substrate, and described the first distance is greater than described second distance.
14. magnetic knots as claimed in claim 1, also comprise:
At least one magnetic biasing structure, contiguous described free layer.
15. magnetic knots as claimed in claim 14, wherein said free layer is between the first magnetic biasing structure and described substrate of described at least one magnetic biasing structure.
16. magnetic knots as claimed in claim 15, the second magnetic biasing structure of wherein said at least one magnetic biasing structure is between described free layer and described substrate.
17. magnetic knots as claimed in claim 1, wherein said free layer also comprises:
Multiple domain wall motion barriers, make described free layer comprise at least one domain wall, and described multiple stable states comprise that essence is arranged in described at least one domain wall at least one place of described multiple domain wall motion barriers.
18. magnetic as claimed in claim 17 knots, wherein said multiple domain wall motion barriers comprise the change of shape of described free layer and are arranged at least one of two kinds of modes of insert layer of described free layer.
19. 1 kinds of magnetic knots, it uses and is positioned on substrate in magnetic device, and this magnetic knot comprises:
Free layer, comprises at least one cylindrical side wall that is basically perpendicular to described substrate;
Nonmagnetic spacer layer, is adjacent to described at least one cylindrical side wall and has cylindrical geometry body, and described nonmagnetic spacer layer is tunneling barrier layer;
Reference layer, described nonmagnetic spacer layer is between described free layer and described reference layer, and described reference layer has essence cylindrical geometry body;
Wherein, described magnetic knot is configured to make described free layer convertible multiple stable magnetic state in the time that reset current is tied through described magnetic.
20. magnetic knots as claimed in claim 19, wherein said free layer has centre bore therein.
21. magnetic knots as claimed in claim 19, also comprise:
Additional nonmagnetic spacer layer, has at least one additional cylindrical sidewall, and described free layer is at least one additional cylindrical sidewall between described nonmagnetic spacer layer and described additional nonmagnetic spacer layer and described in being adjacent to; And
Additional reference layer, described additional nonmagnetic spacer layer is between described additional reference layer and described free layer.
22. magnetic knots as claimed in claim 21, wherein said additional reference layer has centre bore therein.
23. 1 kinds of magnetic memories, comprising:
Substrate, has top surface;
Multiple magnetic cells, each at least one magnetic knot that comprises of described multiple magnetic cells, described at least one magnetic knot comprises reference layer, nonmagnetic spacer layer and free layer, described nonmagnetic spacer layer is between described free layer and described reference layer, described free layer, described nonmagnetic spacer layer and described reference layer form at least one non-zero angle with respect to described substrate, described magnetic knot be configured such that in the time that reset current is tied through described magnetic described in free layer convertible multiple stable magnetic state; And
Multiple bit lines.
24. magnetic memories as claimed in claim 23, wherein said non-zero angle is greater than 45 degree.
25. magnetic memories as claimed in claim 23, wherein said free layer, described nonmagnetic spacer layer and described reference layer are basically perpendicular to described substrate.
26. magnetic memories as claimed in claim 23, wherein said free layer is to have to be basically perpendicular to the axle of described substrate and the column of multiple sidewalls.
27. magnetic memories as claimed in claim 26, the contiguous described multiple sidewalls of wherein said nonmagnetic spacer layer.
28. magnetic memories as claimed in claim 27, wherein said magnetic knot has circular cross-section.
29. magnetic memories as claimed in claim 23, wherein said magnetic knot has the cross section of selecting from circular, ellipse, square and rectangle.
30. magnetic memories as claimed in claim 23, wherein said reference layer is synthetic anti-ferromagnetic layer.
31. magnetic memories as claimed in claim 23, each also the comprising of wherein said at least one magnetic knot:
Additional nonmagnetic spacer layer; And
Additional reference layer, described free layer is between described nonmagnetic spacer layer and described additional nonmagnetic spacer layer, described additional nonmagnetic spacer layer is between described additional reference layer and described free layer, and described additional reference layer and described additional nonmagnetic spacer layer form at least one additional non-zero angle with respect to described substrate.
32. magnetic memories as claimed in claim 23, wherein said free layer has the first height in the direction perpendicular to described substrate, and described reference layer upwards has the second height the party, and described first is highly less than described the second height.
33. magnetic memories as claimed in claim 23, wherein said free layer separates the first distance with described substrate, and described reference layer separates second distance with described substrate, and described the first distance is greater than described second distance.
34. magnetic memories as claimed in claim 23, wherein said at least one magnetic knot also comprises:
At least one magnetic biasing structure, contiguous described free layer.
35. magnetic memories as claimed in claim 34, wherein said free layer is between the first magnetic biasing structure and described substrate of described at least one magnetic biasing structure.
36. memories as claimed in claim 34, the second magnetic biasing structure of wherein said at least one magnetic biasing structure is between described free layer and described substrate.
37. magnetic memories as claimed in claim 23, wherein said free layer also comprises:
Multiple domain wall motion barriers, make described free layer comprise at least one domain wall, and described multiple stable states comprise that essence is arranged in described at least one domain wall at least one place of described multiple domain wall motion barriers.
38. magnetic memories as claimed in claim 37, wherein said multiple domain wall motion barriers comprise the change of shape of described free layer and are arranged at least one of two kinds of modes of insert layer of described free layer.
39. magnetic memories as claimed in claim 23, wherein said free layer is synthetic anti-ferromagnetic layer.
40. 1 kinds of methods for providing magnetic to tie on substrate, this magnetic knot uses in magnetic device, and the method comprises:
Free layer is provided;
Nonmagnetic spacer layer is provided; With
Reference layer is provided, and described nonmagnetic spacer layer is between described free layer and described reference layer, and described free layer, described nonmagnetic spacer layer and described reference layer form at least one non-zero angle with respect to described substrate;
Wherein, described magnetic knot is configured to make described free layer convertible multiple stable magnetic state in the time that reset current is tied through described magnetic.
41. methods as claimed in claim 40, wherein said non-zero angle is greater than 45 degree.
42. methods as claimed in claim 40, wherein said free layer, described nonmagnetic spacer layer and described reference layer are basically perpendicular to described substrate.
43. methods as claimed in claim 40, wherein provide the step of described free layer also to comprise:
Column contact is provided; With
In described column contact, deposit at least one free layer material;
Wherein provide the step of described nonmagnetic spacer layer to be also included on described at least one free layer material and deposit at least one non-magnetic spacer layer material;
Wherein provide the step of described reference layer to be also included on described at least one non-magnetic spacer layer material and deposit at least one reference layer material.
44. methods as claimed in claim 43, wherein said column contact comprises top surface, the method also comprises:
Remove a part, a part for described at least one non-magnetic spacer layer material and the part for described at least one reference layer material of described at least one free layer material from the described top surface of described column contact and the region that is adjacent to described column contact.
45. methods as claimed in claim 44, wherein said column contact has the cross section of selecting from circular, ellipse, square and rectangle.
46. methods as claimed in claim 40, also comprise:
In described substrate, provide groove, described groove has bottom and multiple sidewall, and described groove has the cross section of selecting from circular, ellipse, square and rectangle;
On multiple sidewalls of described groove, provide the first contact, provide the step of described the first contact to be also included in and in described groove, deposit the first contact layer and remove the part of described the first contact layer on the bottom of described groove;
Wherein provide in described the first contact on multiple sidewalls that the step of described reference layer is also included in described groove described reference layer is provided;
Wherein provide on the described reference layer on multiple sidewalls that the step of described nonmagnetic spacer layer is also included in described groove described nonmagnetic spacer layer is provided;
Wherein provide in the described nonmagnetic spacer layer on multiple sidewalls that the step of described free layer is also included in described groove described free layer is provided;
Wherein said method is also included on described free layer the second contact is provided, and the core of described groove is filled in described the second contact.
47. methods as claimed in claim 40, wherein provide the step of described reference layer to comprise: synthetic anti-ferromagnetic layer is provided.
48. methods as claimed in claim 40, also comprise:
Additional nonmagnetic spacer layer is provided; And provide additional reference layer, described free layer is between described nonmagnetic spacer layer and described additional nonmagnetic spacer layer, described additional nonmagnetic spacer layer is between described additional reference layer and described free layer, and described additional reference layer and described additional nonmagnetic spacer layer form at least one additional non-zero angle with respect to described substrate.
49. methods as claimed in claim 48, also comprise:
The magnetic moment of described reference layer and described additional reference layer is set as to anti-bifurcation, and the step of setting described magnetic moment also comprises and applies the magnetic field that essence is parallel to described substrate;
In the time that is greater than the relaxation time of described reference layer and is greater than the relaxation time of described additional reference layer, described magnetic field is reduced to zero.
50. methods as claimed in claim 40, wherein provide the step of described free layer also to comprise: the first height that defines described free layer in the direction perpendicular to described substrate; And
Wherein provide the step of described reference layer to be included in the second height that defines described reference layer in described direction, described first is highly less than described the second height.
51. methods as claimed in claim 40, also comprise:
At least one magnetic biasing structure of contiguous described free layer is provided.
52. methods as claimed in claim 40, wherein provide the step of described free layer also to comprise:
Multiple domain wall motion barriers are provided, make described free layer comprise at least one domain wall, described multiple stable states comprise that essence is arranged in described at least one domain wall at least one place of described multiple domain wall motion barriers.
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| US13/751,304 US9490421B2 (en) | 2012-12-21 | 2013-01-28 | Method and system for providing vertical spin transfer switched magnetic junctions and memories using such junctions |
| US13/751,304 | 2013-01-28 |
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| CN110224058A (en) * | 2018-03-02 | 2019-09-10 | 三星电子株式会社 | Magnetic device and the method that the magnetic junction of magnetic device is written |
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| CN111108617A (en) * | 2019-12-24 | 2020-05-05 | 长江存储科技有限责任公司 | Magnetoresistive random access memory |
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