CN103887425B - Magnetic junction and magnetic memory and for providing the method for magnetic junction - Google Patents
Magnetic junction and magnetic memory and for providing the method for magnetic junction Download PDFInfo
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- CN103887425B CN103887425B CN201310713668.6A CN201310713668A CN103887425B CN 103887425 B CN103887425 B CN 103887425B CN 201310713668 A CN201310713668 A CN 201310713668A CN 103887425 B CN103887425 B CN 103887425B
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
Abstract
The present invention provides magnetic junction and magnetic memory and for providing the method for magnetic junction.The magnetic junction includes reference layer, nonmagnetic spacer layer and free layer.Nonmagnetic spacer layer is between reference layer and free layer.Free layer, nonmagnetic spacer layer and reference layer form non-zero angle relative to substrate.The magnetic junction is configured such that proper write current is convertible multiple stable magnetic state across free layer when magnetic junction.
Description
Technical field
The method of magnetic junction is provided the present invention relates to a kind of magnetic junction, magnetic memory and on substrate.Background technique
Magnetic memory, particularly, MAGNETIC RANDOM ACCESS MEMORY (MRAM), because of its high read/write speed during operation
Potential in terms of degree, excellent tolerance, non-volatile and low energy consumption, and cause more and more concerns.MRAM can be utilized
Magnetic material stores information as information recording medium.A type of MRAM is spin transfer torque random access memory
(STT-MRAM).STT-MRAM utilizes magnetic junction, and the magnetic junction is at least partially through being driven through magnetic junction (driven
Through electric current) and be written into.The spin polarized current for being driven through magnetic junction applies spinning moment into magnetic junction
On magnetic moment.As a result, having one layer (or the multilayer) of the magnetic moment in response to spinning moment to can be converted desired state.
For example, Fig. 1 depicts conventional magnetic tunnel knot (MTJ) 10, it can be used for conventional STT-MRAM.Conventional MTJ10
It is usually located in bottom contact 11, using conventional seed layer 12, and including conventional antiferromagnetic (AFM) layer 14, routine reference layer
16, conventional barrier layer 18, conventional free layer 20 and conventional cap layer 22.Also show top contact 24.
Conventional contact 11 and 24 on direction of the electric current perpendicular to plane (CPP) or along z-axis as shown in Figure 1 for driving
Streaming current.Conventional seed layer 12 is grown to commonly used in the subsequent layer (such as AFM layer 14) of help with desired crystal structure.
Conventional barrier layer 18 is nonmagnetic and e.g. thin insulator, such as MgO.
Routine reference layer 16 and conventional free layer 20 are magnetic.The magnetization 17 of routine reference layer 16 usually by with AFM
Layer 14 it is magnetized it is exchange biased interaction and be fixed or be pinned at specific direction.Although being depicted as simple (single)
Layer, but routine reference layer 16 may include multiple layers.For example, routine reference layer 16 can be synthetic anti-ferromagnetic (SAF) layer,
Magnetosphere including the antiferromagnetic coupling and thin conductive layer of such as Ru.In such SAF, it can be used thin inserted with Ru
Multiple magnetospheres of layer.In another embodiment, the coupling across Ru layers can be ferromagnetic.In addition, other forms
Conventional MTJ10 may include additional reference layer (not shown), the additional reference layer by additional non magnetic barrier layer or
Conductive layer (not shown) is separated with free layer 20.
Conventional free layer 20 has variable magnetization 21.Although being depicted as simple layer, conventional free layer 20 can also
To include multiple layers.For example, conventional free layer 20 can be synthesis layer comprising antiferromagnetic by the thin conductive layer of such as Ru
Ground or ferromagnetic the multiple magnetospheres coupled.Although being shown as planar, the magnetization 21 of conventional free layer 20 can have
There is perpendicular magnetic anisotropy.Therefore, reference layer 16 and free layer 20 can make their magnetization 17 and 21 be respectively perpendicular to those
The planar orientation of layer.
In order to convert the magnetization 21 of conventional free layer 20, electric current is driven perpendicular to plane (in z-direction).When enough
When electric current contacts 11 to bottom from 24 driving of top contact, the magnetization 21 of conventional free layer 20, which can be converted, is parallel to conventional ginseng
Examine the magnetization 17 of layer 16.When enough electric currents contact 24 to top from 11 driving of bottom contact, the magnetization 21 of free layer can be with
It is converted into being antiparallel to the magnetization of reference layer 16.Difference in terms of magnetic configuration (magnetic configuration) corresponds to
Different magnetic resistance, thus corresponding to conventional MTJ10 different logic state (for example, " 0 " in logic and in logic
" 1 ").Therefore, it can determine that the state of conventional MTJ by reading the tunnel magneto (TMR) of routine MTJ10.
Although routine MTJ10 can use spin transfer and be written, read and sensing the TMR of the knot, and can be with
It is used in STT-MRAM, but still has disadvantage.For example, it is desirable to which the area of coverage of routine MTJ10 reduces so that conventional MTJ to contract
It is small to arrive smaller size.The size for reducing routine MTJ10 allows to increase using the surface density of the memory of conventional magnetic knot 10.So
And reduce the amount of magnetic material present in the size reduction free layer 16 of conventional free layer 16, thus it can negatively affect
Thermal stability.The reduction of the thermal stability of conventional MTJ10 negatively affects reliably storing as time go by for conventional MTJ10
The ability of data.Therefore, the performance impairment of conventional MTJ loses.
Therefore, it is necessary to a kind of method and systems, can improve the performance of the memory based on spin transfer torque.Herein
The method and system of description solves such need.
Summary of the invention
A kind of method and system provides the magnetic junction that can be used and be located on substrate in magnetic device.The magnetic junction packet
Include reference layer, nonmagnetic spacer layer and free layer.The nonmagnetic spacer layer is between reference layer and free layer.It is free layer, non-magnetic
Property wall and reference layer relative to substrate formed non-zero angle.The magnetic junction is configured such that proper write current passes through magnetic junction
When free layer it is convertible between multiple stable magnetic state.
Detailed description of the invention
Fig. 1 depicts conventional magnetic junction.
Fig. 2-3 depicts the exemplary implementations using the convertible vertical magnetism knot of spin transfer.
Fig. 4 depicts another exemplary implementations using the convertible vertical magnetism knot of spin transfer.
Fig. 5 depicts the exemplary implementations using the convertible vertical magnetism knot of spin transfer.
Fig. 6 depicts another exemplary implementations using the convertible another vertical magnetism knot of spin transfer.
Fig. 7 depicts another exemplary implementations using the convertible another vertical magnetism knot of spin transfer.
Fig. 8 depicts another exemplary implementations using the convertible vertical magnetism knot of spin transfer.
Fig. 9 depicts another exemplary implementations using the convertible vertical magnetism knot of spin transfer.
Figure 10-11 depicts another exemplary implementations using the convertible vertical magnetism knot of spin transfer.
Figure 12-13 depicts another exemplary implementations using the convertible vertical magnetism knot of spin transfer.
Figure 14 depicts another exemplary implementations using the convertible vertical magnetism knot of spin transfer.
Figure 15 depicts another exemplary implementations using the convertible vertical magnetism knot of spin transfer.
Figure 16-17 depicts another demonstration embodiment party using spin transfer and the convertible vertical magnetism knot of domain wall motion
Formula.
Figure 18 is depicted utilizes the exemplary implementations of the memory of magnetic junction in the memory element of storage unit.
Figure 19 is flow chart, depicts the demonstration implementation using the manufacturing method of the convertible vertical magnetism knot of spin transfer
Mode.
Figure 20 is flow chart, is depicted the ginseng using the convertible vertical magnetism knot of spin transfer of exemplary implementations
Examine the exemplary implementations that layer is set as the method for double states.
Figure 21 is flow chart, depicts the demonstration implementation using the manufacturing method of the convertible vertical magnetism knot of spin transfer
Mode.
Figure 22-26 depicts the exemplary implementations of the vertical magnetism knot during manufacture.
Specific embodiment
Exemplary implementations are related to can be used for as magnetic junction and utilization in the magnetic devices of such as magnetic memory
The device of magnetic junction.Provide be described below so that those of ordinary skill in the art can implement and using the present invention, and with
Lower description is provided under the background of patent application and its necessary condition.It different distortion for exemplary implementations and retouches herein
The General Principle and feature stated will be easy to become apparent.Mainly in specific method and the system aspects being provided in specifically implementation
Exemplary implementations are described.However, this method and system will effectively be run in others are implemented.Phrase, such as " demonstration is real
Apply mode ", " embodiment " and " another embodiment " can be related to identical or different embodiment and be related to more
A embodiment.By about with specific components system and/or device embodiment is described.However, system and/or device can
To include system and/or the more or fewer components of device than showing, can make in terms of the arrangement of component and type
The range changed without departing from invention.Also exemplary implementations will be described under the background of the specific method with particular step.
However, for different step and/or additional step and for having the different order inconsistent with exemplary implementations
The step of other methods, this method and system are effectively run.Therefore, the present invention is not limited to the embodiment shown,
But meet and principle described herein and the consistent widest range of feature.
Method and system provides magnetic junction and the magnetic memory using magnetic junction.Magnetic junction includes reference layer, non-magnetic
Property wall and free layer.Nonmagnetic spacer layer is between reference layer and free layer.Free layer, nonmagnetic spacer layer and reference layer
The angle of non-zero-degree is formed with substrate.Magnetic junction is configured such that free layer is in multiple stable magnetic when proper write current flows through magnetic junction
It is convertible between state.
Exemplary implementations are described under the background of specific magnetic knot and the magnetic memory with specific components.This field is general
Logical technical staff will readily appreciate that the present invention with there is others and/or additional component and/or with the present invention it is inconsistent
The use of magnetic junction and magnetic memory of other features it is consistent.This method and system are also each for spin transfer phenomenon, magnetic
Anisotropy and other physical phenomenons are described when under the background of feed-forward nets.Therefore, those of ordinary skill in the art will easily
The theoretical explanation for recognizing the performance for this method and system is based on spin transfer, magnetic anisotropy and other physical phenomenons
When feed-forward nets and carry out.However, this method described herein and system are independent of special physical interpretation.This field is general
Logical technical staff also will readily appreciate that this method and the system quilt under the background that a structure has with the particular kind of relationship of substrate
Description.However, those of ordinary skill in the art will readily appreciate that this method and system are consistent with other structures.For example,
There can be the other angles other than zero degree between the multiple layers and following substrate of magnetic junction.In addition, this method and being
It unites and is described under the background of synthesis and/or simple certain layer.However, those of ordinary skill in the art will readily appreciate that
These layers can have another structure.In addition, this method and system are in magnetic junction and/or the back of the free layer with specific layer
It is described under scape.However, those of ordinary skill in the art, which will readily appreciate that also to can be used, to be had and this method and system
The magnetic junction and/or free layer of inconsistent additional and/or different layer.In addition, certain components be described as it is magnetic, ferromagnetic
It is property and ferrimagnetism.As used herein, term magnetic may include ferromagnetism, ferrimagnetism or similar structures.Therefore, such as
Here used, term " magnetism " or " ferromagnetism " include, but are not limited to ferromagnet and ferrimagnet.This method and system are also in list
It is described under a magnetic junction and the background of free layer.However, those of ordinary skill in the art will readily appreciate that this method and
System with it is consistent with more magnetic junctions and using the use of the magnetic memory of multiple free layers.In addition, as used herein, " face
It is interior " substantially in one or more layers of magnetic junction of plane or it is parallel to one or more layers of plane of magnetic junction.Instead
It, " vertical " is corresponding to basically perpendicular to one or more layers of direction of magnetic junction.
Fig. 2-3 respectively depicts the perspective of the exemplary implementations using the convertible vertical magnetism knot 100 of spin transfer
Figure and sectional view.Magnetic junction can be such as magnetic tunnel junction (MTJ), Spin Valve or ballistic magnetoresistance structure, or combinations thereof.It is magnetic
Knot 100 can be used for various applications.For example, magnetic junction can be used for magnetic memory, such as STT-MRAM.For clarity, Fig. 2-3
It is not drawn to.Magnetic junction includes free layer 110, nonmagnetic spacer layer 120 and nailed layer or reference layer 130.Magnetic junction 100
It is illustrated on substrate 102.In some embodiments, magnetic junction 100 may include seed layer and/or cap rock (not shown).
Magnetic junction 100 is vertical magnetism knot.In vertical magnetism knot, the layer of magnetic junction is relative to substrate layer with non-zero angle
Orientation.Therefore, minimum ruler of the minimum dimension of free layer 110, nonmagnetic spacer layer 120 or reference layer 130 relative to substrate 102
It is very little to be orientated with non-zero angle.In conventional magnetic knot, minimum dimension is thickness, is parallel to the thickness of substrate.In magnetic junction 100
In, each thickness is in radial direction (x-y plane) in layer 110,120 and 130.The minimum dimension of substrate 102 is in the direction z
On.Conversely, the larger surface of layer 110,120 and 130 is perpendicular to the plane formed by substrate 102.For example, because layer 110,120
It is concentric ring (such as cylinder) with 130, so the maximum surface of layer 120,130 and 140 or " plane " may be considered that in the direction z
On, perpendicular to the substrate in x-y plane.Non-zero angle between layer 110,120 and 130 and substrate 102 can also be from layer
110, the perspective view at the interface between 120 and 130 and the surface of substrate 102 is seen.For vertical magnetism knot 100, free layer 110
Interface between interface and nonmagnetic spacer layer 120 and reference layer 130 and substrate 102 between nonmagnetic spacer layer 120
Top substantially flat top surface formed non-zero angle.Non-zero angle can also regard the side wall of layer 110,120 and/or 130 as (more
Large surface) and the surface of substrate between angle.
In the embodiment as shown, free layer 110, nonmagnetic spacer layer 120 and reference layer 130 are basically perpendicular to substrate
102 top surface.Therefore, the non-zero angle in Fig. 2-3 is essentially 90 degree.Therefore, the non-zero angle of magnetic junction 100 can be
Basic 90 degree in processing variation.In other embodiments, other angles are possible.In some embodiments,
Free layer 110, nonmagnetic spacer layer 120 and reference layer 130 have at least 45 degree of angle relative to the top surface of substrate.
In some such embodiments, the angle between layer 110,120 and 130 and substrate 102 is 80-90 degree.In other words, layer
110,120 and 130 within ten degree perpendicular to substrate 102.
Nonmagnetic spacer layer 120 can be barrier layer, conductor or the table between free layer 110 and nailed layer 130
Reveal the other structures of magnetic resistance.In some embodiments, nonmagnetic spacer layer 120 is crystalline MgO barrier layer.It is this non-
Nonmagnetic spacer layer can have preferred crystalline orientation, and such as (100) are orientated.
Free layer 110 and reference layer 130 are ferromagnets.Although depicting simple layer as, free layer 110 and/or reference
Layer 130 may include multiple layers.For example, free layer 110 and/or reference layer 130 can be including multiple magnetospheric SAF, this is more
A magnetosphere is coupled antiferromagneticly or ferromagneticly by the thin layer of such as Ru.In this SAF, Ru or other materials can be used
Multiple magnetospheres that the thin layer of material is interposed therebetween.Free layer 110 and/or reference layer 130 are also possible to another multilayer.
Free layer magnetic moment 111 is convertible using spin transfer, therefore is shown by double-head arrow 111.The magnetic moment of reference layer 130
131 can fix in particular directions.In the embodiment as shown, the magnetic moment 131 of reference layer 130 is on the negative direction z.?
In another embodiment, magnetic moment 131 can be on the positive direction z.In other embodiments, free layer 110 and/or reference layer
130 magnetic moment can be stable in another direction.Therefore, other orientations of the magnetic moment of free layer 110 and/or reference layer 130 are
It is possible.
It is noted that in the embodiment as shown, magnetic moment 111 and 131 is considered in the face of layer 110 and 130
It is interior.The maximum surface of layer 110 and 130 is around the surface of z-axis.Magnetic moment 111 and 131 be also perpendicularly between interface direction (that is,
It is perpendicularly to the radial direction).Therefore, for vertical magnetism knot 100, magnetic moment 111 and 131 is considered in face, even if 111 He of magnetic moment
131 perpendicular to substrate 102.
Although layer 110,120 and 130 is shown with specific orientation, in other embodiments, this orientation be can change.Example
Such as, reference layer 130 can be closer to the center of magnetic junction 100.Also pinning layer (not shown) can be used.When write current passes through
When magnetic junction 100, magnetic junction 100, which is also arranged as, allows free layer 110 to be converted between magnetic state stablizing.Therefore, free layer
110 magnetic moment 111 is convertible using spin transfer torque.Since magnetic moment 111 is convertible, so magnetic moment 111 is by double end arrow
Head indicates.It should be noted that in some embodiments, magnetic field can be used in combination with spin transfer torque be converted from by
The state of layer 110.
Magnetic junction 100 can have improved performance in terms of higher surface density.By reduce free layer 110 radius with
And the radius of nonmagnetic spacer layer 120 and reference layer 130 can reduce the area of coverage of magnetic junction 100.For example, magnetic junction 100
Diameter can be less than ten nanometers.If the reduction of the radius of free layer 110 will be reduced in free layer 110 without other factors
The amount of magnetic material.This meeting is so that free layer 110 has smaller magnetic stability.However, the height h of free layer 110 can be with
Radius reduces and increases.The increase of the height of free layer 110 can at least partly compensate the reduction of radius.As a result, free layer
110 can keep magnetic stability with the smaller area of coverage (face size) of magnetic junction 100.It should further be noted that free layer 110
The increase of height can increase shape anisotropy, which helps to maintain the magnetic stability of free layer.Again,
Under the smaller szie of magnetic junction 100, free layer 110 can more be stablized magnetic.In addition, magnetic junction 100 can have more preferable control
Resistance area product (RA).For example, the variation on the height h of magnetic junction 100 can be used for adjusting the RA of magnetic junction 100 with
In in the desired range.
Fig. 4 depicts another exemplary implementations using the convertible vertical magnetism knot 100 ' of spin transfer.In order to clear
Chu, Fig. 4 are not in proportion.Magnetic junction 100 ' is similar to magnetic junction 100.Therefore, similar layer is labeled similarly.Magnetic junction
100 ' include free layer 110 ', nonmagnetic spacer layer 120 ' and the reference layer 130 ' for being analogous respectively to layer 110,120 and 130.From
It is portrayed as respectively by layer 110 ' and reference layer 130 ' with magnetic moment 111 ' and 131 '.In other embodiments, magnetic moment 111 '
There can be another orientation with 131 '.In addition, the one or both in layer 110 ' and 130 ' can be synthetic anti-ferromagnetic layer or other
Multilayer.Although layer 110 ', 120 ' and 130 ' is shown with specific orientation, in other embodiments, this orientation be can change.Example
Such as, reference layer 130 ' can be closer to the center of magnetic junction 100 '.It in some embodiments, may include optional seed layer
(not shown), optional pinning layer (not shown) and/or optional cap rock (not shown).The magnetization of free layer 110 ' utilizes spin
It is convertible to shift torque.
Fig. 4 illustrate for magnetic junction 100 or 100 ' write current flowing possibility direction.If electric current is perpendicular to layer
110 ', 120 ' and 130 ' plane flowing, then perpendicular to the write current i of planecppGinseng is radially flow to from free layer 110 '
Layer 130 ' is examined, or vice versa.Therefore, although icppIt is depicted as flowing outward, but electric current can inwardly flow, direction
The central axis of magnetic junction.In some embodiments, magnetic junction 100 ' has in the top surface or bottom surface of free layer 110 '
One contact (being not shown in Fig. 4).In other embodiments, contact can be at the center of free layer 110 ' (for example, edge
Central axis).In some embodiments, bottom surface or top surface of another contact in reference layer 130 '.In other implementations
In mode, another contact surrounds the outside of reference layer 130 '.If electric current flows in the plane of layer 110 ', 120 ' and 130 '
It moves, then write current i of the electric current in facecipVertically flow (along z-axis).Therefore, although icipIt is illustrated as in the negative direction z
Flowing, but electric current can be flowed in the positive direction z to change the state of free layer.
As discussed above, magnetic junction 100 ' is vertical magnetism knot.As a result, layer 110 ', 120 ' and 130 ' is about substrate
102 ' have non-zero angle.However, the side wall of magnetic junction is not completely vertical in the embodiment being shown in FIG. 4.Instead of
Ground, side wall form angle, θ about z-axis.In some embodiments, θ is no more than ten degree.In some such embodiments
In, θ is within the scope of zero processing limitation.
Magnetic junction 100 ' can share the benefit of magnetic junction 100.Specifically, it is close to extend to higher face for magnetic junction 100 '
Degree.For example, magnetic junction 100 ' can have acceptable performance and thermal stability under the diameter less than ten nanometers.In addition, magnetic
Knot 100 ' can have the resistance area product (RA) more preferably controlled.Therefore, magnetic junction 100 ' can have improved performance.
Fig. 5, which is depicted, utilizes the convertible vertical magnetism knot 100 of spin transfer " another exemplary implementations.In order to clear
Chu, Fig. 5 are not in proportion.Magnetic junction 100 " is similar to magnetic junction 100 and 100 '.Therefore, similar layer is labeled similarly.
Magnetic junction 100 " including the free layer 110 for being analogous respectively to layer 110/110 ', 120/120 ' and 130/130 ' ", non-magnetic spacer
Layer 120 " and reference layer 130 ".Free layer 110 " and reference layer 130 " is portrayed as respectively with magnetic moment 111 " and 131 ".At it
In his embodiment, magnetic moment 111 " and 131 " can have another orientation.One or both in addition, layer 110 in " and 130 " can be with
It is synthetic anti-ferromagnetic layer or other multilayers.Although layer 110 ", 120 " and 130 " is shown, in other embodiment party with specific orientation
In formula, this orientation be can change.It in some embodiments, may include optional seed layer (not shown), optional pinning
Layer (not shown) and/or optional cap rock (not shown).Free layer 110 " magnetization using spin transfer torque it is convertible.It is magnetic
Knot 100 " is vertical magnetism knot.Therefore, layer 110 ", 120 " and 130 " about substrates 102 " have non-zero angle.In the reality shown
It applies in mode, layer 110 ", 120 " and 130 " being basically perpendicular to substrate 102 ".However, in other embodiments, other non-zero-degrees
Angle is possible.
With its reference layer 130 at the center of magnetic junction 100 " in magnetic junction 100 " ".Free layer 110 ' is located at magnetic junction
100 " outer edge.Nonmagnetic spacer layer 120 " stilling remain in free layer 110 " and reference layer 130 " between.
Magnetic junction 100 " can share the benefit of magnetic junction 100 and 100 '.Particularly, magnetic junction 100 " extends to higher
Surface density.For example, magnetic junction 100 " can have acceptable performance and thermal stability under the diameter less than ten nanometers.This
Outside, magnetic junction 100 " can have the resistance area product (RA) more preferably controlled, because of the face of the working portion of nonmagnetic spacer layer
Product is bigger than the face inner area that MRAM architecture occupies on substrate.In other words, if the area occupied on substrate be it is small,
The gross area of non-magnetic spacer object can be become larger much by increasing the total height of stacking.This makes it easy to except RA product
Integrally-built resistance is controlled by the height of control stacking.Therefore, magnetic junction 100 " can have improved performance.
Fig. 6-9 depicts vertical magnetism knot 100,100 " ', 100 " " and 100 " " ' exemplary implementations plan view.For
Clear, Fig. 6-9 is not drawn to.Magnetic junction 100 shown in fig. 6 may be considered that 100 phase of magnetic junction described with Fig. 2-3
Together.Therefore, magnetic junction 100 has the circular area of coverage.Therefore, magnetic junction 100 can be cylinder.Magnetic junction 100 " ', 100 " "
With 100 " " ' be similar to magnetic junction 100,100 ' and 100 ".Therefore, similar layer is labeled similarly.Magnetic junction 100 " ',
100 " " and 100 " " ' each respectively include free layer 110 " ', 110 " " and 110 " " ', nonmagnetic spacer layer 120 " ' 120 " " and
120 " " ' and reference layer 130 " ', 130 " " and 130 " " ', be analogous respectively to layer 110/110 '/110 ", 120/120 '/
120 " and 130/130 '/130 ".Free layer 110 " '/110 " "/110 " " ' and reference layer 130 " '/130 " "/130 " " ' respectively by
Be portrayed as with magnetic moment 111 " '/111 " "/111 " " ' and 131 " '/131 " "/131 " " '.In other embodiments, magnetic moment
111 " '/111 " "/111 " " ' and 131 " '/131 " "/131 " " ' can have another orientation.In addition, layer 110 " '/110 " "/
110 " " ' and 130 "/130 " "/130 " " ' in one or both can be synthetic anti-ferromagnetic layer or other multilayers.Although layer
110 " '/110 " "/110 " " ', 120 " '/120 " "/120 " " ' and 130 " '/130 " "/130 " " ' it is shown with specific orientation, still
In other embodiments, this orientation can change.It in some embodiments, may include that optional seed layer (does not show
Out), optional pinning layer (not shown) and/or optional cap rock (not shown).Free layer 110 " '/110 " "/110 " " ' magnetic
Change 111 " '/111 " "/111 " " ' it is convertible using spin transfer torque.Magnetic junction 100 " '/100 " "/100 " " ' it is vertical magnetism
Knot.Therefore, layer 110 " '/110 " "/110 " " ', 120 " '/120 " "/120 " " ' and 130 " '/130 " "/130 " " ' relative to substrate
102 " '/102 " "/102 " " ' there is non-zero angle.
Vertical magnetism knot 100 " ', 100 " " and 100 " " ' there is the area of coverage different from magnetic junction 100.For example, magnetic junction
100 " ' there is elliptic overlay area.Magnetic junction 100 " " has square foot-print.Magnetic junction 100 " " ' there is rectangular foot-print.Though
So show magnetic junction 100,100 " ', 100 " " and 100 " " ' various shape, but other shapes can be used.However,
In general, without turning and the symmetrical area of coverage is for improved performance can be desired.
The benefit of magnetic junction 100 " ', 100 " " and 100 " " ' magnetic junction 100,100 ' and 100 can be shared ".Specifically, magnetic
Property knot 100 " ', 100 " " and 100 " " ' can extend to higher surface density.For example, magnetic junction 100 " ', 100 " " and 100 " " '
Can have acceptable performance and thermal stability under the diameter less than ten nanometers.In addition, magnetic junction 100 " ', 100 " " and
100 " " ' can have the resistance area product (RA) more preferably controlled.Therefore, magnetic junction 100 " ', 100 " " and 100 " " ' can have and change
Kind performance.
Figure 10-11 depicts the side of another exemplary implementations using the convertible vertical magnetism knot 200 of spin transfer
View and plan view.For clarity, Figure 10-11 is not drawn to.Magnetic junction 200 is similar to magnetic junction 100,100 ', 100 ",
100 " ', 100 " " and 100 " " '.Therefore, similar layer is labeled similarly.Magnetic junction 200 includes free layer 210, non magnetic
Interlayer 220 and reference layer 230, be analogous respectively to layer 110/110 '/110 "/110 " '/110 " "/110 " " ', 120/120 '/
120 "/120 " '/120 " "/120 " " ' and 130/130 '/130 "/130 " '/130 " "/130 " " '.Although layer 210,120 and 230
It is shown with specific orientation, but in other embodiments, this orientation can change.For example, reference layer 230 can be located at magnetic junction
200 center, and free layer 210 is located at periphery.In some embodiments, may include optional seed layer (not shown),
Optional pinning layer (not shown) and/or optional cap rock (not shown).The magnetization of free layer 210 can using spin transfer torque
Conversion.Magnetic junction 210 is vertical magnetism knot.Therefore, layer 210,220 and 230 has non-zero angle relative to substrate 202.Showing
In embodiment out, layer 210,220 and 230 is basically perpendicular to substrate 202.However, in other embodiments, other non-zeros
It is possible for spending angle.In addition, magnetic junction 200 is shown as with circular coverage area.However, in other embodiments, magnetic junction
200 area of coverage can have another shape, including but not limited to oval, square and rectangle.Free layer 210 is described as having
The simple layer of magnetic moment 211.In other embodiments, magnetic moment 211 can have another orientation.In addition, free layer 210 can be conjunction
At inverse ferric magnetosphere or other multilayers.
Reference layer 230 is synthetic anti-ferromagnet (SAF).Therefore, SAF layer 230 includes the nonmagnetic layer 234 by such as Ru
Two separated ferromagnetic layers 232 and 236.Ferromagnetic layer 232 and 236 is respectively provided with the magnetic moment 231 and 233 being coupled anti-ferromagnetically.
Magnetic junction 200 can share magnetic junction 100,100 ', 100 ", 100 " ', 100 " " and/or 100 " " ' benefit.It is special
Not, magnetic junction 200 extends to higher surface density.For example, can have under the diameter less than ten nanometers can for magnetic junction 200
The performance and thermal stability of receiving.In addition, magnetic junction 200 can have the resistance area product (RA) more preferably controlled.In addition, due to
Reference layer 230 is removed, and magnetic junction 200 can have stray magnetic field.Such as from the magnetic flux line of the Base top contact of magnetic junction 200 as it can be seen that
Field from ferromagnetic layer 232 and 236 is basically eliminated.Therefore, the stability of magnetic junction 200 can be enhanced.Thus, magnetic junction
200 can have improved performance.
Figure 12-13 depicts the side of another exemplary implementations using the convertible vertical magnetism knot 200 ' of spin transfer
View and plan view.For clarity, Figure 12-13 is not drawn to.Magnetic junction 200 ' is similar to magnetic junction 100,100 ', 100 ",
100 " ', 100 " ", 100 " " ' and 200.Therefore, similar layer is labeled similarly.Magnetic junction 200 ' includes being analogous respectively to layer
210,220 and 230 free layer 210 ', nonmagnetic spacer layer 220 ' and reference layer 230 '.Although layer 210 ', 120 ' and 230 ' with
Specific orientation is shown, but in other embodiments, this orientation can change.It in some embodiments, may include optional
Seed layer (not shown), optional pinning layer (not shown) and/or optional cap rock (not shown).The magnetization of free layer 210 '
It is convertible using spin transfer torque.Magnetic junction 210 ' is vertical magnetism knot.Therefore, layer 210 ', 220 ' and 230 ' is relative to base
Plate 202 ' has non-zero angle.In the embodiment as shown, layer 210 ', 220 ' and 230 ' is basically perpendicular to substrate 202 '.So
And in other embodiments, other non-zero angles are possible.In addition, magnetic junction 200 ' is shown as with circular coverage area.
However, in other embodiments, the area of coverage of magnetic junction 200 ' can have another shape, including but not limited to oval, square
Shape and rectangle.Free layer 210 ' and reference layer 230 ' are described as having the simple layer of magnetic moment 211 ' and 231 '.In other implementations
In mode, magnetic moment 211 ' and 231 ' can have another orientation.In addition, free layer 210 ' and/or reference layer 230 ' can be synthesis
Inverse ferric magnetosphere or other multilayers.
Magnetic junction 200 ' further includes additional nonmagnetic spacer layer 240 and the additional reference layer 245 with magnetic moment 246.Therefore,
Free layer 210 ' is between nonmagnetic spacer layer 220 ' and 240 and between reference layer 230 ' and 245.Magnetic moment 231 ' and 246
Anti-parallel alignment, therefore in double states.
Magnetic junction 200 ' can share magnetic junction 100,100 ', 100 ", 100 " ', 100 " ", 100 " " ' and/or 200 benefit
Place.Specifically, magnetic junction 200 ' extends to higher surface density.For example, magnetic junction 200 ' is under the diameter less than ten nanometers
Can have acceptable performance and thermal stability.In addition, magnetic junction 200 ' can have the resistance area product (RA) more preferably controlled.
In addition, magnetic junction 200 ' can have the stray magnetic field of reduction.Two reference layers 230 ' and 245 magnetic moments with anti-parallel alignment
231 ' and 246.Such as from the magnetic flux line of the Base top contact of magnetic junction 200 ' as it can be seen that the field from reference layer 230 ' and 245 is in freedom
210 ' place of layer substantially eliminate.The stability of magnetic junction 200 ' can be enhanced.Thus, magnetic junction 200 ' can have improved performance.
Figure 14, which is depicted, utilizes the convertible vertical magnetism knot 200 of spin transfer " another exemplary implementations side view
Figure.For clarity, Figure 14 is not in proportion.Magnetic junction 200 " be similar to magnetic junction 100,100 ', 100 ", 100 " ', 100 " ",
100 " " ', 200 and/or 200 '.Therefore, similar layer is labeled similarly.Magnetic junction 200 " includes being analogous respectively to layer 210/
210 ', 220/220 ' and 230/230 ' free layer 210 ", nonmagnetic spacer layer 220 " and reference layer 230 ".Although layer 210 ",
220 " and 230 " are shown with specific orientation, but in other embodiments, this orientation can change.In some embodiments,
It may include optional seed layer (not shown), optional pinning layer (not shown) and/or optional cap rock (not shown).Freely
Layer 210 " magnetization using spin transfer torque it is convertible.Magnetic junction 210 " is vertical magnetism knot.Therefore, layer 210 ", 220 " and
230 " relative to substrates 202 " have non-zero angle.In the embodiment as shown, layer 210 ", 220 " and 230 " is basically perpendicular to
Substrate 202 ".However, in other embodiments, other non-zero angles are possible.Free layer 210 " and reference layer 230 " quilt
It is described as the simple layer with magnetic moment 211 " and 231 ".In other embodiments, magnetic moment 211 " and 231 " can have another take
To.In addition, free layer 210 " and/or reference layer 230 " can be the inverse ferric magnetosphere or other multilayers of synthesis.
It is can be in magnetic junction 200 " middle that improved magnetic flux is provided by the height using free layer 210 " and reference layer 230 "
Closure.Such as in Figure 14 as it can be seen that free layer 210 " height h be less than reference layer 230 " height d.In addition, 210 " of free layer
Upper and lower surfaces are respectively offset from reference layer 230 " upper and lower surfaces.The position difference of height and upper and lower surface reduces
In reference layer 230 " upper and lower surfaces on magnetic charge effect.Therefore, the elimination of stray magnetic field can be improved.
Magnetic junction 200 " magnetic junction 100,100 ', 100 can be shared ", 100 " ', 100 " ", 100 " " ', 200 and/or 200 '
Benefit.Specifically, magnetic junction 200 " extends to higher surface density.For example, magnetic junction 200 " straight less than ten nanometers
Can have acceptable performance and thermal stability under diameter.In addition, magnetic junction 200 " can have the resistance area product more preferably controlled
(RA).In addition, magnetic junction 200 " can have the stray magnetic field of reduction.Free layer 210 " and reference layer 230 " is in upper surface and following table
Difference on face is reduced in free layer 230 " on stray magnetic field effect.Magnetic junction 200 " stability can be enhanced.Cause
And magnetic junction 200 " can have improved performance.
Figure 15, which is depicted, utilizes the convertible vertical magnetism knot 200 of spin transfer " ' another exemplary implementations side view
Figure.For clarity, Figure 15 is not in proportion.Magnetic junction 200 " ' be similar to magnetic junction 100,100 ', 100 ", 100 " ',
100 " ", 100 " " ', 200,200 ' and/or 200 ".Therefore, similar layer is labeled similarly.Magnetic junction 200 " ' it include freely
Layer 210 " ', nonmagnetic spacer layer 220 " ' and reference layer 230 " ', be analogous respectively to layer 210/210 '/210 ", 220/220 '/
220 " and 230/230 '/230 ".Although layer 210 " ', 220 " ' and 230 " ' it is shown with specific orientation, in other embodiments
In, this orientation can change.For example, reference layer 230 " ' can in centralized positioning, and free layer 210 " ' on periphery.In some realities
Apply in mode, may include optional seed layer (not shown), optional pinning layer (not shown) and/or optional cap rock (not
It shows).Free layer 210 " ' magnetization using spin transfer torque it is convertible.Magnetic junction 210 " ' it is vertical magnetism knot.Therefore, layer
210 " ', 220 " ' and 230 " ' relative to substrate (being not shown in Figure 15) there is non-zero angle.In the embodiment as shown, layer
210 " ', 220 " ' and 230 " ' it is basically perpendicular to substrate.However, in other embodiments, other non-zero angles are possible.
Free layer 210 " ' and reference layer 230 " ' be described as having magnetic moment 211 " ' and 231 " ' simple layer.In other embodiments
In, magnetic moment 211 " ' and 231 " ' there can be another orientation.In addition, free layer 210 " ' and/or reference layer 230 " ' it can be synthesis
Inverse ferric magnetosphere or other multilayers.
Magnetic junction 200 " ' it further include united magnetic biasing structure 247.In the embodiment as shown, two magnetic biasing are shown
Structure 247.In another embodiment, the magnetic biasing structure 247 of another quantity can be used.Magnetic biasing structure 247 is included in and joins
" the magnetic region 248 being pinned on ' identical direction of examining layer magnetic moment 231.Magnetic biasing structure is also adjacent to magnetic junction 200 " ' top surface and/
Or bottom surface positioning.Therefore, such as by magnetic junction 200 " ' top and bottom draw magnetic flux line as it can be seen that spuious magnetic can be improved
The elimination of field.
Magnetic junction 200 " ' magnetic junction 100,100 ', 100 can be shared ", 100 " ', 100 " ", 100 " " ', 200,200 ' and/
Or 200 " benefit.Specifically, magnetic junction 200 " ' can extend to higher surface density and can have the resistance more preferably controlled
Product of areas (RA).In addition, magnetic junction 200 " ' there can be the stray magnetic field of reduction." ' above and below the magnetic in free layer 210
Inclined structure 247 is reduced in free layer 230 " on stray magnetic field effect.Magnetic junction 200 " ' stability can be enhanced.Cause
And magnetic junction 200 " ' there can be improved performance.
Figure 16-17 depicts the side of another exemplary implementations using the convertible vertical magnetism knot 250 of spin transfer
View.For clarity, Figure 16-17 is not drawn to.Magnetic junction 250 be similar to magnetic junction 100,100 ', 100 ", 100 " ',
100 " ", 100 " " ', 200,200 ', 200 " and/or 200 " '.Therefore, similar layer is labeled similarly.Magnetic junction 250 includes
Free layer 260, nonmagnetic spacer layer 270 and reference layer 280, be analogous respectively to layer 110/110 '/110 "/110 " '/110 " "/
110″″′/210/210′/210″/210″′、120/120′/120″/120″′/120″″/120″″′/220/220′/220″/
220 " ' and 130/130 '/130 "/130 " '/130 " "/130 " " '/230/230 '/230 "/230 " '.Although layer 260,270
It is shown with 280 with specific orientation, but in other embodiments, this orientation can change.For example, reference layer 280 can be located at
The center of magnetic junction 250, and free layer 260 is located at periphery.In some embodiments, may include optional seed layer (not
Show), optional pinning layer (not shown) and/or optional cap rock (not shown).The magnetization of free layer 260 utilizes spin transfer
Torque and the domain wall motion being discussed below are convertible.Magnetic junction 250 is vertical magnetism knot.Therefore, layer 260,270 and 280 phases
There is non-zero angle for substrate 252.In the embodiment as shown, layer 260,270 and 280 is basically perpendicular to substrate 252.So
And in other embodiments, other non-zero angles are possible.In addition, magnetic junction 250 can have the circular area of coverage.So
And in other embodiments, the area of coverage of magnetic junction 250 can have another shape, including but not limited to oval, square and
Rectangle.Free layer 260 and reference layer 280 are described as simple layer.In addition, free layer 260 and/or reference layer 280 can be conjunction
At inverse ferric magnetosphere or other multilayers.
Free layer 260 is configured as having multidomain and at least one domain wall always.In some embodiments, this by
Include the barrier for domain wall motion in free layer 260 and realizes.Two domain wall motion barriers are shown in embodiments
262.Therefore, free layer has two farmlands corresponding with magnetic moment 263 and 264.In other embodiments, there are more domain walls
Barrier is moved, therefore may exist more farmlands.Domain wall motion barrier 262 can have such as recess in free layer 260
The form of the geometry barrier of (not shown).Insert layer can also be used to form domain wall motion barrier.For example, with free layer 260
The different magnetic material of rest part or thin nonmagnetic layer can be used for domain wall motion barrier 262.This magnetic material can have
There are spin-exchange-coupled more smaller than the rest part of free layer 260 or different Ms values.For example, smaller spin-exchange-coupled can pass through
In the region of domain wall motion barrier 262 using different materials, make material used in the rest part of free layer 260 with
Another magnetic or non-magnetic material in the region of domain wall motion barrier 262 fuses to obtain, or obtains in another way.It is similar
Ground, different Ms can be obtained by using other materials and/or alloy.In other embodiments, geometry can be used
The combination of barrier, insert layer and/or other mechanism
Due to the presence of domain wall motion barrier 262, free layer 260 has domain wall at any one barrier 262, thus magnetic
Property stablize.In the embodiment shown in Figure 16, domain wall is located at top barrier 262.If free layer 260 is switched to another
State can then apply the longitudinal direction in CPP write current (transverse direction in Figure 16) or CIP(Figure 16) write current.In some realities
It applies in mode, by spin transfer torque and complementary field, domain wall is moved.Therefore, as shown in figure 17, domain wall moves on to lower part screen
Barrier 262.Therefore, free layer 260 includes farmland corresponding with magnetic moment 263 ' and 264 '.Variation on the position of domain wall can reflect
On the resistance of magnetic junction 250.
Magnetic junction 250 can share magnetic junction 100,100 ', 100 ", 100 " ', 100 " " ', 100 " " ', 200,200 ',
200 " and/or 200 " ' benefit.Particularly, magnetic junction 250 extends to higher surface density.For example, magnetic junction 250 is small
Can have acceptable performance and thermal stability under ten nanometers of diameter.In addition, magnetic junction 250 can have the electricity more preferably controlled
It hinders product of areas (RA).In addition, the movement of domain wall can be more effective for magnetization inversion compared with for single farmland free layer
Mechanism.Therefore, magnetic junction 250 can have improved transfer efficiency.Thus, magnetic junction 250 can have improved performance.So
And, it should be noted that write-in should be done so that free layer 260 remains multidomain layer.In addition, magnetic resistance can reduce, because
This signal from magnetic junction 250 can reduce.
Vertical magnetism knot 100,100 ', 100 ", 100 " ', 100 " ", 100 " " ', 200,200 ', 200 " and/or 250 can be with
For magnetic memory.Figure 18 depicts the exemplary implementations of such memory 300.Magnetic memory 300 include read/
Column selection driver 302 and 306 is written and wordline selects driver 304.It should be noted that can provide other and/or
Different components.The memory block of memory 300 includes magnetic cell 310.Each magnetic cell includes at least one magnetism
Knot 312 and at least one selector 314.In some embodiments, selector 314 is transistor.Magnetic junction 312 can be with
Including magnetic junction 100,100 ', 100 ", 100 " ', 100 " ", 100 " " ', one in 200,200 ', 200 ", 200 " ' and/or 250
It is a or more.Although each unit 310 shows a magnetic junction 312, in other embodiments, each unit can be mentioned
For the magnetic junction 312 of another quantity.
Because magnetic memory 300 using magnetic junction 100,100 ', 100 ", 100 " ', 100 " ", 100 " " ', 200,200 ',
200 ", 200 " ' and/or 250, so performance can be improved and magnetic memory 300 can extend to higher surface density.
Specifically, smaller magnetic junction 310 can be used while keeping the thermal stability of memory 300.
Figure 19 is flow chart, depicts the exemplary implementations of the method 400 for manufacturing vertical magnetism knot, the perpendicular magnetic
Property knot using spin transfer it is convertible.Because the method 400 can be used for manufacturing magnetic junction 100,100 ', 100 ", 100 " ',
100 " ", 100 " " ', it is one or more in 200,200 ', 200 ", 200 " ' and/or 250.Method 400 is in magnetic junction 100
It is described under background.However, method 400 can use in other magnetic junctions.In addition, method 400 can be incorporated into magnetic memory
Manufacture in.Therefore, method 400 can be used for manufacturing STT-MRAM300 or other magnetic memories.Method 400, which may also include, to be set
Set optional seed layer, optional cap rock and optional pinning layer (not shown).For the sake of simplicity, it is convenient to omit some steps.In addition, side
The step of method 400, can combine, be executed, and/or be decomposed with another sequence.In addition, though method 400 is forming single magnetism
It is described under the background of knot, but usually multiple magnetic junctions are formed parallel.
Free layer 110 is provided by step 402, forms non-zero angle relative to substrate 202.Step 402 may include sinking
The desired material of product reaches the expectation thickness of free layer 110.Step 402 may include providing SAF or other multilayers.In some implementations
In mode, step 402 may include that free layer 110 is provided as column structure.This column structure can be formed in lower contact or
There can be the contact on the top for being formed in column structure, be manufactured later.In some embodiments, in step 402
The free layer of formation can be cyclic structure.
Nonmagnetic layer 120 is provided by step 404.Step 404 not may include depositing desired non-magnetic material, including but not
It is limited to crystalline MgO.Other techniques are also possible to a part of step 204.For example, metal Mg can be deposited, then by nature
Ground aoxidizes or by plasma oxidation to form crystalline MgO barrier layer.In addition, the material of expectation thickness can be deposited in step 404
Material.For example, step 404 may include providing crystalline MgO, it is sufficiently thin using as tunneling barrier.Reference is provided by step 406
Layer 130.Step 406 may include the expectation thickness for depositing desired material and reaching reference layer 130.In addition, step 406 may include
SAF is provided.In some embodiments, step 406 can be executed by the way that reference layer 130 is formed as cyclic structure.At it
In his embodiment, reference layer 130 can be at the center of the magnetic junction of formation.In some such embodiments, step 406
It can be executed before step 402 and 404.
It may then pass through the manufacture that step 408 completes magnetic junction 100.For example, if the magnetic junction formed is double structure,
Remaining nonmagnetic spacer layer and reference layer can be then formed in a step 408.Furthermore it is possible to set the magnetic moment of reference layer.This
Outside, the contact and other parts of memory can be manufactured.
In some embodiments, in step 402, it can be initially formed contact, free layer material can be in contact
It is deposited as one layer.Also be deposited for the material of nonmagnetic spacer layer 120 and reference layer 130, as step 404 and 406 one
Part.In the later period of manufacture, free layer material, non-magnetic spacer layer material and the reference layer material of part can be from the tops of contact
It portion and is removed in the region of the contact.Therefore, free layer 110, nonmagnetic spacer layer 120 and reference layer 130 are each
The cyclic structure of the surface of lower layer can be formed in.Alternatively, free layer material can deposit in the trench, in the ditch
A part of free layer material at the base portion of slot is removed.Similarly, non-magnetic spacer layer material can be deposited on the surplus of groove
It is remaining to be not filled by part.It is also removed in the part non-magnetic spacer layer material of channel bottom.It then, can be by with reference to layer material
Deposition, is removed in the part of channel bottom.Finally, the groove can be filled in central contact (if any).In such reality
It applies in mode, external contact can be deposited before providing free layer.However, in this approach, it is generally next in deposition
Before layer, the layer in the part of channel base is removed, a possibility that reduce current distributing or be formed by the short circuit of knot.
Using method 400, can manufacture magnetic junction 100,100 ', 100 ", 100 " ', 100 " ", 100 " " ', 200,200 ',
One or more and magnetic memory 300 in 200 ", 200 " ' and/or 250.It is thereby achieved that magnetic junction 100,
100 ', 100 ", 100 " ', 100 " ", 100 " " ', 200,200 ', 200 ", 200 " ', 250 and/or 310 benefit.
Figure 20 is flow chart, depicts the exemplary implementations of the method 420 for manufacturing vertical magnetism knot, the perpendicular magnetic
Property knot using spin transfer it is convertible.More specifically, method 420 is used to set the direction of magnetization of the reference layer in double magnetic junctions.
Therefore, method 420 can be used for manufacturing magnetic junction 200 '.Method 420 is described under the background of magnetic junction 200 '.However, method
420 can use in other magnetic junctions.In addition, method 420 can be incorporated to magnetic memory, such as STT-MRAM300 or other
In the manufacture of magnetic memory.In some embodiments, the step of method 420 can combine, with another sequence execute, and/or
It is decomposed.In some embodiments, only when magnetic moment 231 ' and 246 in anti-bifurcation (i.e. in a single direction be aligned) when
Execution method 420.However, in other embodiments, method 420 can be applied from the easy magnetizing axis along reference layer 230 ' and 245
The magnetic field of increasing is started with being directed at magnetic moment 231 ' and 246.
By step 422, apply highfield perpendicular to the pinned direction of magnetic moment 231 ' and 246 expectations.Highfield is enough
So that magnetic moment 231 ' and 246 is aligned along hard axis.
Then magnetic field passes through step 424 inclination decline.Magnetic field sufficiently slowly reduces, so that magnetic moment 231 ' can be rung with having time
Should in the magnetic field and relaxation.Therefore, reduce the time needed for the magnetic field that applies in step 422 be greater than or equal to magnetic moment 231 ' and
246 time constant.As a result, magnetic moment 231 ' and 246 forms shearing state.Magnetic field is removed finally by step 426.Then, magnetic moment
231 ' and 246 ' can relaxation be anti-bifurcation.Therefore, using this method 420, reference layer 230 ' and 245 can be set as desired shape
State.
Figure 21 is flow chart, depicts the exemplary implementations of the method 450 for manufacturing vertical magnetism knot, the perpendicular magnetic
Property knot using spin transfer it is convertible.Method 450 can be accordingly used in manufacture magnetic junction 100,100 ', 100 ", 100 " ',
100 " ", 100 " " ', it is one or more in 200,200 ', 200 ", 200 " ' and/or 250.Figure 22-24, which is depicted, to be utilized
An embodiment of vertical magnetism knot 500 during this method 450 is formed.For clarity, Figure 22-24 is not drawn to.The party
Method 450 describes under the background of magnetic junction 550.However, method 450 can use in other magnetic junctions.In addition, method 450
It can be incorporated into the manufacture of magnetic storage.Therefore, method 450 can be used for manufacturing STT-MRAM300 or other magnetic storages
Device.Method 450, which may also include, provides optional seed layer, optional cap rock and optional pinning layer (not shown).It for the sake of simplicity, can be with
Omit some steps.In addition, the step of method 450, can combine, be executed, and/or be decomposed with another sequence.In addition, though
Method 450 describes under the background for forming single magnetic junction, but usually multiple magnetic junctions are formed parallel.Method 450 is also mentioning
For being described under the background of the magnetic junction with center free layer.However, in other embodiments, method 450 can be adjusted
To provide not in the free layer of centralized positioning.In addition, method 450 is described in the case where manufacture magnetic junction is with the background with CPP electric current.
However, method 450 may adapt to the magnetic junction using CIP electric current.
Pass through step 452 depositing contact layers.By step 454, the contact stud for magnetic junction is formed by contact layer.One
In a little embodiments, deposition can be by the full film of the conductive material of reactive ion etching, such as TiN and/or W in step 452.So
The mask in region of contact will be formed by providing covering afterwards, and the expose portion of contact layer is gone using such as reactive ion etching
It removes.In other embodiments, can be provided in will form mask with hole in the region of contact.Conductive material is sunk
Product, mask are removed.Therefore, central contact is formd.Figure 22 depicts the magnetic after having been carried out step 452 and 454
Property knot 500.Therefore, TiN contact 504 has been formed on substrate 502.In the embodiment as shown, substrate 502 simply may be used
To be another layer previously manufactured.In addition, further it is shown that conductor 503.Conductor 503, which can be, is electrically connected to contact for providing
504 line.
Free layer material is deposited by step 456.Step 456 may include deposition for the multiple of multilayer free layer
Layer.In some embodiments, CoFeB can be used for free layer.The deposition can use angle-tilt ion beam deposition or sputtering is held
Row.
Non-magnetic spacer layer material is deposited by step 458.In addition, step 458 may include that there is expectation to take for manufacture
To crystalline MgO barrier layer.In some embodiments, the barrier layer MgO can be sputtered.
It is deposited with reference to layer material by step 460.Step 460 may include deposition for the multiple of multilayer reference layer
Layer.In some embodiments, CoFeB can be used for reference layer.Figure 23 depicts the magnetic junction after performing step 460
500.Therefore, free layer 510, nonmagnetic spacer layer 520 and reference layer 530 are shown.
Then, magnetic junction 500 is defined by step 462.Step 462 includes removing one from the top surface of cylindrical contact
Point free layer material, non-magnetic spacer layer material and refer to layer material.In addition, these materials are from the area adjacent to cylindrical contact
Domain is removed.In some embodiments, step 462 utilizes the technology that such material is preferentially removed from flat (level) surface
To execute.It is, for example, possible to use the ion milling (ion carried out on the direction on the surface basically perpendicular to substrate 502
Mill).It is alternatively possible to use reactive ion etching.Therefore, magnetic junction 500 is defined.Figure 24, which is depicted, is performing step
Magnetic junction 500 after 462.Therefore, free layer 510 ', nonmagnetic spacer layer 520 ' and reference layer 530 ' have been formd.It needs
It should be noted that lower conductor 503 only contacts central contact 504 and adjacent layer 510 '.
By step 464, insulator is provided above the desired region of magnetic junction 500.Step 464 may include that deposition is exhausted
Edge body such as SiO2, SiN, SiO or aluminum oxide.Furthermore it is possible to remove the undesirable part of insulator.In step 464
The insulator of offer can prevent the short circuit of magnetic junction 500 and prevent the external contact that will be formed from contacting with free layer 510 '.
Figure 25 depicts the magnetic junction 500 after performing step 464.Therefore, insulator 542,544 and 540 is shown.Some
In embodiment, insulator 542,544 and 540 is all formed by identical layer.
Then external contact is formed by step 466.Step 466 may include deposited, full film conductive layer and remove the layer
Selected portions.Figure 26 depicts the magnetic junction 500 after performing step 466.Therefore, conductor 550 has been formd.Such as
Fig. 2 is as it can be seen that electric current can be flowed between contact 504 and 550 by layer 510 ', 520 ' and 530 '.
It has been described for providing the method and system of vertical magnetism knot and the memory using the magnetic junction.This method
The exemplary implementations according to describe with system, and those of ordinary skill in the art will readily appreciate that can be right
Embodiment is changed, and any variation will be in the spirit and scope of this method and system.Therefore, ordinary skill people
Member can be with number of improvements could be made without the spirit and scope of disengaging accessory claim.
This application claims enjoy entitled " the METHOD AND SYSTEM FOR submitted on December 21st, 2012
PROVIDING VERTICAL SPIN TRANSFER SWITCHED MAGNETIC JUNCTIONS AND MEMORIES
The U.S. Provisional Patent Application No.61/745 of USING SUCH JUNCTIONS ", 542 equity are hereby incorporated by reference
This.
Claims (46)
1. a kind of magnetic junction uses in magnetic device and is located on substrate, which includes:
Reference layer；
Nonmagnetic spacer layer；
Free layer, the nonmagnetic spacer layer are the free layer, described non-magnetic between the free layer and the reference layer
Property wall and the reference layer form at least one non-zero angle relative to the substrate；With
At least one magnetic biasing structure, the neighbouring free layer are aligned with the reference layer and have the magnetic with the reference layer
The magnetic moment of the square same direction,
Wherein the magnetic junction is configured such that the free layer is in multiple stable magnetic shapes when write current passes through the magnetic junction
It is convertible between state,
Wherein the free layer has the first height on the direction perpendicular to the substrate, and the reference layer has in this direction
There is the second height, and first height is less than second height.
2. magnetic junction as described in claim 1, wherein the non-zero angle is greater than 45 degree.
3. magnetic junction as described in claim 1, wherein the free layer, the nonmagnetic spacer layer and the reference layer are basic
Perpendicular to the substrate.
4. magnetic junction as claimed in claim 3, wherein the nonmagnetic spacer layer is basically perpendicular to the substrate.
5. magnetic junction as described in claim 1, wherein the free layer is with axis basically perpendicular to the substrate and more
The column of a side wall.
6. magnetic junction as claimed in claim 5, wherein the nonmagnetic spacer layer is adjacent to the multiple side wall.
7. magnetic junction as claimed in claim 6, wherein the magnetic junction has circular cross-section.
8. magnetic junction as claimed in claim 6 is selected from round, oval, square and rectangle wherein the magnetic junction has
The section selected out.
9. magnetic junction as described in claim 1, wherein the reference layer is synthetic anti-ferromagnetic layer.
10. magnetic junction as described in claim 1, wherein the free layer is synthetic anti-ferromagnetic layer.
11. magnetic junction as described in claim 1, further includes:
Additional nonmagnetic spacer layer；With
Additional reference layer, the free layer are described attached between the nonmagnetic spacer layer and the additional nonmagnetic spacer layer
Add nonmagnetic spacer layer between the additional reference layer and the free layer, the additional reference layer and it is described add it is non magnetic
Wall forms at least one additional non-zero angle relative to the substrate.
12. magnetic junction as described in claim 1, wherein the free layer and the substrate separate first distance, the reference
Layer and the substrate separate second distance, and the first distance is greater than the second distance.
13. magnetic junction as described in claim 1, wherein first magnetic biasing of the free layer at least one magnetic biasing structure
Between structure and the substrate.
14. magnetic junction as claimed in claim 13, wherein the second magnetic biasing structure of at least one magnetic biasing structure is described
Between free layer and the substrate.
15. magnetic junction as described in claim 1, wherein the free layer further include:
Multiple domain wall motion barriers, so that the free layer includes at least one domain wall, the multiple stable state includes essence
Positioned at least one domain wall described at least one of the multiple domain wall motion barrier place.
16. magnetic junction as claimed in claim 15, wherein the multiple domain wall motion barrier includes the shape of the free layer
At least one of variation and the insert layer two ways in the free layer.
17. a kind of magnetic junction uses in magnetic device and is located on substrate, which includes:
Free layer, at least one cylindrical side wall including being basically perpendicular to the substrate；
Nonmagnetic spacer layer adjacent at least one described cylindrical side wall and has cylindrical geometry body, and described non magnetic
Interlayer is barrier layer；
Reference layer, for the nonmagnetic spacer layer between the free layer and the reference layer, the reference layer has essence
Cylindrical geometry body；With
At least one magnetic biasing structure, the neighbouring free layer are aligned with the reference layer and have the magnetic with the reference layer
The magnetic moment of the square same direction,
Wherein, the magnetic junction is configured as making the free layer in multiple stabilizations when write current passes through the magnetic junction
It is convertible between magnetic state,
Wherein the free layer has the first height on the direction perpendicular to the substrate, and the reference layer has in this direction
There is the second height, and first height is less than second height.
18. magnetic junction as claimed in claim 17, wherein the free layer has in centre bore wherein.
19. magnetic junction as claimed in claim 17, further includes:
Additional nonmagnetic spacer layer, has at least one additional cylindrical side wall, the free layer is in the nonmagnetic spacer layer
Between the additional nonmagnetic spacer layer and adjacent at least one described additional cylindrical side wall；And
Additional reference layer, the additional nonmagnetic spacer layer is between the additional reference layer and the free layer.
20. magnetic junction as claimed in claim 19, wherein the additional reference layer has in centre bore wherein.
21. a kind of magnetic memory, comprising:
Substrate has top surface；
Multiple magnetic cells, each of the multiple magnetic cell include at least one magnetic junction, at least one described magnetic
Property knot include reference layer, nonmagnetic spacer layer, free layer and at least one magnetic biasing structure, the nonmagnetic spacer layer is located at described
Between free layer and the reference layer, the free layer, the nonmagnetic spacer layer and the reference layer are relative to the substrate
At least one non-zero angle is formed, the magnetic junction is configured such that free layer when proper write current passes through the magnetic junction
Convertible between multiple stable magnetic state, at least one described magnetic biasing structure is adjacent to the free layer and the reference layer pair
It is quasi- and there is magnetic moment with the magnetic moment same direction of the reference layer；And
Multiple bit lines,
Wherein the free layer has the first height on the direction perpendicular to the substrate, and the reference layer has in this direction
There is the second height, and first height is less than second height.
22. magnetic memory as claimed in claim 21, wherein the non-zero angle is greater than 45 degree.
23. magnetic memory as claimed in claim 21, wherein the free layer, the nonmagnetic spacer layer and the reference layer
Basically perpendicular to the substrate.
24. magnetic memory as claimed in claim 21, wherein the free layer is with the axis basically perpendicular to the substrate
With the column of multiple side walls.
25. magnetic memory as claimed in claim 24, wherein the nonmagnetic spacer layer is adjacent to the multiple side wall.
26. magnetic memory as claimed in claim 25, wherein the magnetic junction has circular cross-section.
27. magnetic memory as claimed in claim 21, wherein the magnetic junction has from round, oval, square and rectangle
In the section selected.
28. magnetic memory as claimed in claim 21, wherein the reference layer is synthetic anti-ferromagnetic layer.
29. magnetic memory as claimed in claim 21, wherein each of at least one described magnetic junction further include:
Additional nonmagnetic spacer layer；And
Additional reference layer, the free layer are described attached between the nonmagnetic spacer layer and the additional nonmagnetic spacer layer
Add nonmagnetic spacer layer between the additional reference layer and the free layer, the additional reference layer and it is described add it is non magnetic
Wall forms at least one additional non-zero angle relative to the substrate.
30. magnetic memory as claimed in claim 21, wherein the free layer and the substrate separate first distance, the ginseng
It examines layer and the substrate and separates second distance, the first distance is greater than the second distance.
31. magnetic memory as claimed in claim 21, wherein the free layer is the first of at least one magnetic biasing structure
Between magnetic biasing structure and the substrate.
32. memory as claimed in claim 21, wherein the second magnetic biasing structure of at least one magnetic biasing structure is described
Between free layer and the substrate.
33. magnetic memory as claimed in claim 21, wherein the free layer further include:
Multiple domain wall motion barriers, so that the free layer includes at least one domain wall, the multiple stable state includes essence
Positioned at least one domain wall described at least one of the multiple domain wall motion barrier place.
34. magnetic memory as claimed in claim 33, wherein the multiple domain wall motion barrier includes the shape of the free layer
At least one of shape variation and the insert layer two ways in the free layer.
35. magnetic memory as claimed in claim 21, wherein the free layer is synthetic anti-ferromagnetic layer.
36. a kind of for providing the method for magnetic junction on substrate, which uses in magnetic device, this method comprises:
Free layer is provided；
Nonmagnetic spacer layer is provided；
Reference layer is provided, the nonmagnetic spacer layer is the free layer, described between the free layer and the reference layer
Nonmagnetic spacer layer and the reference layer form at least one non-zero angle relative to the substrate；With
At least one magnetic biasing structure is provided, at least one described magnetic biasing structure is aligned adjacent to the free layer, with the reference layer
And there is the magnetic moment with the magnetic moment same direction of the reference layer,
Wherein, the magnetic junction is configured as making the free layer in multiple stabilizations when write current passes through the magnetic junction
It is convertible between magnetic state,
The step of free layer is wherein provided further include: the of the free layer is defined on the direction perpendicular to the substrate
One height；And
The step of reference layer is wherein provided include define in said direction the reference layer second height, described first
Height is less than second height.
37. method as claimed in claim 36, wherein the non-zero angle is greater than 45 degree.
38. method as claimed in claim 36, wherein the free layer, the nonmagnetic spacer layer and the reference layer are basic
Perpendicular to the substrate.
39. method as claimed in claim 36, wherein the step of providing the free layer further include:
Column contact is provided；With
At least one free layer material is deposited in column contact；
The step of wherein providing the nonmagnetic spacer layer further includes at least one described free layer deposited on materials at least one
A non-magnetic spacer layer material；
The step of wherein providing the reference layer further includes at least one described nonmagnetic spacer layer deposited on materials at least one
It is a to refer to layer material.
40. method as claimed in claim 39, wherein column contact includes top surface, this method further include:
The top surface that is contacted from the column and adjacent to the region that the column contacts removal it is described at least one from
By a part of layer material, a part of at least one non-magnetic spacer layer material and at least one described reference layer material
A part of material.
41. method as claimed in claim 40, wherein column contact has from round, oval, square and rectangle
The section selected.
42. method as claimed in claim 36, further includes:
Groove is provided in the substrate, the groove has bottom and a multiple side walls, the groove have from it is round, oval,
The section selected in square and rectangle；
The step of providing the first contact on multiple side walls of the groove, providing the described first contact further includes in the groove
The a part of the first contact layer of middle deposition and removal first contact layer on the bottom of the groove；
The step of reference layer is wherein provided further include on multiple side walls of the groove it is described first contact on provide
The reference layer；
The step of wherein providing the nonmagnetic spacer layer further includes on the reference layer on multiple side walls of the groove
The nonmagnetic spacer layer is provided；
The step of wherein providing the free layer further includes in the nonmagnetic spacer layer on multiple side walls of the groove
The free layer is provided；
Wherein the method also includes providing the second contact on the free layer, second contact is filled in the groove
Center portion point.
43. method as claimed in claim 36, wherein the step of providing the reference layer includes: to provide synthetic anti-ferromagnetic layer.
44. method as claimed in claim 36, further includes:
Additional nonmagnetic spacer layer is provided；And additional reference layer is provided, the free layer is in the nonmagnetic spacer layer and institute
State between additional nonmagnetic spacer layer, the additional nonmagnetic spacer layer between the additional reference layer and the free layer,
The additional reference layer and the additional nonmagnetic spacer layer form at least one relative to the substrate and add non-zero angle.
45. method as claimed in claim 44, further includes:
The step of being set as anti-bifurcation, set the magnetic moment magnetic moment of the reference layer and the additional reference layer further includes applying
Add the magnetic field for being substantially parallel to the substrate；
In the time for the relaxation time and the relaxation time greater than the additional reference layer for being greater than the reference layer
The magnetic field is reduced to zero.
46. method as claimed in claim 36, wherein the step of providing the free layer further include:
Multiple domain wall motion barriers are provided, so that the free layer includes at least one domain wall, the multiple stable state includes
Essence is located at least one domain wall at least one of the multiple domain wall motion barrier place.
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| US201261745542P | 2012-12-21 | 2012-12-21 | |
| US61/745,542 | 2012-12-21 | ||
| US13/751,304 | 2013-01-28 | ||
| US13/751,304 US9490421B2 (en) | 2012-12-21 | 2013-01-28 | Method and system for providing vertical spin transfer switched magnetic junctions and memories using such junctions |
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| US9837602B2 (en) * | 2015-12-16 | 2017-12-05 | Western Digital Technologies, Inc. | Spin-orbit torque bit design for improved switching efficiency |
| US9805795B2 (en) * | 2016-01-08 | 2017-10-31 | Samsung Electronics Co., Ltd. | Zero leakage, high noise margin coupled giant spin hall based retention latch |
| US10162016B2 (en) * | 2016-03-08 | 2018-12-25 | Texas Instruments Incorporated | Reduction of magnetic sensor component variation due to magnetic materials through the application of magnetic field |
| CN106783862B (en) * | 2016-12-22 | 2020-11-10 | 西安交通大学 | STT-MRAM memory cell |
| US10411184B1 (en) * | 2018-03-02 | 2019-09-10 | Samsung Electronics Co., Ltd. | Vertical spin orbit torque devices |
| CN110349609B (en) * | 2019-07-04 | 2021-09-07 | 西安交通大学 | Three-dimensional magnetic device and magnetic memory |
| US11289644B2 (en) * | 2019-12-19 | 2022-03-29 | International Business Machines Corporation | Magnetic tunnel junction having all-around structure |
| WO2021127970A1 (en) * | 2019-12-24 | 2021-07-01 | Yangtze Memory Technologies Co., Ltd. | Megnetoresistive random access memory |
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