CN107946456A - A kind of magnetic tunnel-junction with strong perpendicular magnetic anisotropic - Google Patents
A kind of magnetic tunnel-junction with strong perpendicular magnetic anisotropic Download PDFInfo
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Abstract
A kind of magnetic tunnel-junction with strong perpendicular magnetic anisotropic of the present invention, its structure are followed successively by ferromagnetic layer one, barrier layer, ferromagnetic layer two from top to bottom；It is characterized in that：The cross sectional dimensions of magnetic tunnel-junction is between 1nm to 150nm, and the thickness of ferromagnetic layer one and ferromagnetic layer two is both greater than 6nm, and the thickness of ferromagnetic layer one and ferromagnetic layer two is both greater than the half of cross sectional dimensions；The thickness of barrier layer is 0.2 10nm.Compared with prior art, which has the advantages that perpendicular magnetic anisotropic is strong, heat endurance is high, cross sectional dimensions is small, spin-transfer torque upset is efficient, the film number of plies is few.
Description
【Technical field】
The present invention relates to a kind of magnetic tunnel-junction with strong perpendicular magnetic anisotropic, belong to non-volatile magnetic memory and
Magnetic logic technology field.
【Background technology】
Magnetic random memory (Magnetic Random Access Memory, MRAM) and magnetic logic have non-volatile
Property, read or write speed be fast, low in energy consumption, can be erasable infinitely the advantages that, receives the extensive concern of industrial quarters and academia.
Magnetic random memory and the core devices of magnetic logic be magnetic tunnel-junction (Magnetic Tunnel Junction,
MTJ).The basic structure of magnetic tunnel-junction is made of three-layer thin-film：Ferromagnetic layer, barrier layer, ferromagnetic layer.When the magnetic of two ferromagnetic layers
When change direction is identical, the resistance of the structure is relatively low；When the direction of magnetization of two ferromagnetic layers is opposite, the resistance of the structure is higher,
The phenomenon is referred to as tunnel magneto effect (Tunnel Magnetoresistance, TMR), and corresponding low resistance state and high-impedance state can
It is respectively used to characterization binary data " 0 " and " 1 ".Common, a ferromagnetic layer in two ferromagnetic layers has stronger heat surely
Qualitative, its direction of magnetization remains unchanged, and for providing reference, is referred to as reference layer (Reference Layer)；Another iron
The magnetic anisotropy of magnetosphere is weaker, its direction of magnetization can be overturn by applying the modes such as electric current, magnetic field, for storing
Data, are referred to as free layer (Free Layer).
In order to enable the data stored in magnetic tunnel-junction to preserve the sufficiently long time, it is desirable to which free layer has stronger
Heat endurance.The heat endurance of free layer can be weighed with thermostabilization factor Δ (Thermal Stability Factor),
Δ=KV/K can be generally expressed asBT, wherein K are effective magnetic anisotropy constants, and V is free layer volume, KBIt is Boltzmann
Constant, T are temperature.When the shape of cross section of magnetic tunnel-junction is circular, the volume V of free layer can be expressed as：V=π tD2/
4, wherein t are free layer thickness, and D is cross-sectional diameter.Ikeda et al., Nat.Mater.9,721 (2010) and Sato
The documents such as et al., IEEE Magn. Lett.3,3000204 (2012) provide the thermostabilization factor size of measurement ferromagnetic layer
Method.The industrial thermostabilization factor for generally requiring the free layer of magnetic tunnel-junction in magnetic random memory is higher than 60, so that
Ensure the stable storage of data.Spin-transfer torque (Spin Transfer Torque are used in addition, working as:STT) effect is overturn
During the direction of magnetization of free layer, critical reset current density is directly proportional to the magneto damped coefficient of free layer.The magnetic damping of free layer
Coefficient increased dramatically (Ikeda et al., Nature Materials 9,721 with the reduction of free layer thickness
(2010)).Therefore, when the thickness of free layer is smaller (such as 1nm), the magneto damped coefficient of free layer is larger, causes spinning
It is inefficient to move square upset.
The easy axis of ferromagnetic layer can be parallel to thin film planar direction in magnetic tunnel-junction, can also be perpendicular to thin
Membrane plane direction, is known respectively as magnetic anisotropy in face (In-plane Magnetic Anisotropy, IMA) and vertical
Magnetic anisotropy (Perpendicular Magnetic Anisotropy, PMA).Before 2010, magnetic tunnel-junction field
Research be concentrated mainly on the magnetic tunnel-junction based on magnetic anisotropy in face.But due to the effect of demagnetizing field in face, the knot
The reset current density of structure is excessive, it is difficult to meets the requirement of low-power consumption.2010, Ikeda et al. have studied based on Ta/
The magnetic tunnel-junction of CoFeB/MgO/CoFeB/Ta structures, as shown in Figure 1, and finding that the structure can produce interface on interface
Perpendicular magnetic anisotropic (Ikeda et al., Nature Materials 9,721 (2010)).The cross section of the magnetic tunnel-junction
Shape is circle, and cross sectional radius is more than CoFeB layer thickness, and effective magnetic anisotropy constant can be expressed as at this time：
K thereinbFor body magnetocrystalline anisotropy constant, in the structure shown here one
As can ignore；KiIt is interface magnetic anisotropy energy constant；tCoFeBIt is the thickness of ferro-cobalt boron (CoFeB) free layer；MSIt is saturation magnetic
Change intensity；NzAnd Nx,yThe demagnetizing factor in direction in knead dough is vertically oriented respectively；Represent shape respectively to
The opposite sex.When the cross sectional dimensions of free layer is much larger than thickness, NzLevel off to 1, Nx,yLevel off to 0, shape anisotropy tends to
In causing magnetic anisotropy in face.Ikeda et al. has found, when CoFeB layer thickness is sufficiently small (such as 1.3nm), the boundary of the structure
Face perpendicular magnetic anisotropic can overcome shape anisotropy, so that the easy axis of CoFeB layer is perpendicular to interface side
To.However, when the thickness of effective magnetic anisotropy constant K and free layer are constant, as device cross-section size reduces, from
Reduced by the volume of layer, so as to cause heat endurance insufficient, as shown in Figure 2 A.
In recent years, people have carried out substantial amounts of research to strengthen interface perpendicular magnetic anisotropic and heat endurance.One kind increases
The method of strong interface perpendicular magnetic anisotropic is to use suitable cushion or covering layer material.For example, Liu et al. people has found to adopt
After the tantalum (Ta) in said structure is replaced with molybdenum (Mo), interface perpendicular magnetic anisotropic can strengthen 20% or so (Liu et
al.,Scientific Reports 4,5895(2014)).The method of another kind enhancing interface perpendicular magnetic anisotropic is to adopt
Data are stored with the double interfacial structures of MgO/CoFeB/Ta/CoFeB/MgO.Have in the structure shown here two Ta/CoFeB interfaces and
Two CoFeB/MgO interfaces, can strengthen interface perpendicular magnetic anisotropic and heat endurance.For example, Sato et al. has found
The thermostabilization factor of the double interfacial structures of MgO/CoFeB/Ta/CoFeB/MgO is 1.9 times of (Sato of MgO/CoFeB/Ta structures
et al.,Applied Physics Letters 101,022414(2012))。
However, there are wretched insufficiency for the magnetic tunnel-junction based on interface perpendicular magnetic anisotropic.First, experimentally at present
The interface perpendicular magnetic anisotropic for the multi-layer film structure known is still weaker, when magnetic tunnel-junction cross sectional dimensions further reduces,
Thermostabilization is because of subformula's Δ=KV/KBFree layer volume V can reduce in T, so that the thermostabilization factor of free layer reduces, such as
Shown in Fig. 2A.When the thermostabilization factor is reduced to below 60, cannot generally meet the needs of data store reliably and with long-term.Secondly,
Since interface perpendicular magnetic anisotropic is weaker, in order to maintain enough heat endurances (such as thermal stability factor is more than 60), it is desirable to
The cross sectional dimensions of magnetic tunnel-junction is larger, free layer thickness is smaller, as shown in the region one in Fig. 2 B, so as to cause magnetic random
The storage density of memory is relatively low.In addition, the thickness of free layer is smaller to cause larger magneto damped coefficient and relatively low spin
Shift square upset efficiency.Finally, due to interface perpendicular magnetic anisotropic is weaker, it is necessary to strengthen freedom using double interfacial structures
The perpendicular magnetic anisotropic of layer, and it is usually necessary to use the structures such as Co/Pt multilayer films to strengthen the perpendicular magnetic of reference layer respectively to different
Property, so as to add the film number of plies in magnetic tunnel-junction, therefore add the complexity that film is grown in magnetic tunnel-junction preparation process
Degree.
【The content of the invention】
First, goal of the invention：
For the magnetic tunnel-junction based on interface perpendicular magnetic anisotropic mentioned in above-mentioned background there are the problem of, this hair
It is bright to provide a kind of magnetic tunnel-junction with strong perpendicular magnetic anisotropic.Interface perpendicular magnetic anisotropic is based in the prior art
Magnetic tunnel-junction be each to obtain perpendicular magnetic by ferromagnetic layer and the interface perpendicular magnetic anisotropic that is produced on non-ferromagnetic layers interface
Anisotropy and heat endurance, its ferromagnetic layer thickness is less than the half of cross sectional dimensions, therefore its shape anisotropy is intended to lead
Intra-face anisotropy is caused, is unfavorable for the heat endurance of magnetic tunnel-junction.The prior art is different from, it is provided by the invention that there is strong hang down
The magnetic channel of straight magnetic anisotropy is to obtain perpendicular magnetic anisotropic and heat endurance by shape anisotropy, its is ferromagnetic
Layer thickness is more than the half of cross sectional dimensions, therefore its shape anisotropy tends to lead to perpendicular magnetic anisotropic, is conducive to
Strengthen the heat endurance of magnetic tunnel-junction.
Compared with prior art, the device is with perpendicular magnetic anisotropic is strong, heat endurance is high, cross sectional dimensions is small, oneself
Rotation moves the advantages that square upset is efficient, the film number of plies is few.
2nd, technical solution：
The present invention provides a kind of magnetic tunnel-junction with strong perpendicular magnetic anisotropic, its structure is followed successively by iron from top to bottom
Magnetosphere one, barrier layer, ferromagnetic layer two；It is characterized in that：The cross sectional dimensions of magnetic tunnel-junction is ferromagnetic between 1nm to 150nm
The thickness of layer one and ferromagnetic layer two is both greater than 6nm, and the thickness of ferromagnetic layer one and ferromagnetic layer two is both greater than the one of cross sectional dimensions
Half.
It can strengthen the perpendicular magnetic anisotropic and heat endurance of magnetic tunnel-junction by increasing ferromagnetic layer thickness.When ferromagnetic
When the heat endurance of layer two is more stronger than ferromagnetic layer one, can using ferromagnetic layer two as referring to layer, ferromagnetic layer one as free layer,
As shown in Figure 3A；, can be using ferromagnetic layer one as with reference to layer, iron when the heat endurance of ferromagnetic layer one is more stronger than ferromagnetic layer two
Magnetosphere two is used as free layer, as shown in Figure 3B.
The shape of cross section of the magnetic tunnel-junction can be circle, ellipse, square, rectangle etc., circular.
When shape of cross section is circular, the cross sectional dimensions refers to the circular diameter；When shape of cross section is ellipse
When, the cross sectional dimensions refers to the length of the oval major axis；When shape of cross section is square, the horizontal stroke
Sectional dimension refers to the square length of side；When shape of cross section is rectangle, the cross sectional dimensions refers to that this is rectangular
The long edge lengths of shape.
There can also be the plural layers such as cushion and substrate below ferromagnetic layer one, can also have on ferromagnetic layer two
The plural layers such as coating.
The ferromagnetic layer one and ferromagnetic layer two refer to the film layer that ferromagnetic material is formed, and the example of its material is included but not
It is limited to ferro-cobalt boron (CoFeB), iron boron (FeB), ferro-cobalt (CoFe), iron (Fe), cobalt (Co), Heusler alloys (Heusler
The combination of one or more of materials in material such as Alloy).
The barrier layer refer to the insulating materials such as metal oxide formed film layer, the example of its material include but
It is not limited to magnesium oxide, aluminum oxide, magnesium aluminum oxide, hafnium oxide, tantalum pentoxide, bismuth telluride (Bi2Te3), bismuth selenide
(Bi2Se3) etc. one or more of materials in material combination, preferably magnesia (MgO), alundum (Al2O3) (Al2O3), inclined aluminium
Sour magnesium (MgAl2O4).The thickness of barrier layer is 0.2-10nm.
The magnetic tunnel-junction is will be respectively using the methods of traditional magnetron sputtering, molecular beam epitaxy or atomic layer deposition
Layer material is grown in substrate or other multilayer films according to order from top to bottom, is then carried out the tradition such as photoetching, etching and is received
For rice device manufacturing process come what is prepared, the cross-sectional area of each film layer is of substantially equal.
The common element proportioning of the CoFeB is Co20Fe60B20、Co40Fe40B20Or Co60Fe20B20Deng number here
The percentage of word representative element, but it is not limited to element proportioning described here.
The common element proportioning of the FeB is Fe80B20Deng, the percentage of digitized representation element here, but not office
It is limited to element proportioning described here.
The common element proportioning of the CoFe is Co50Fe50、Co20Fe80、Co80Fe20Deng digitized representation member here
The percentage of element, but it is not limited to element proportioning described here.
The Heusler alloys can be ferro-cobalt aluminium (Co2FeAl), cobalt manganese silicon (Co2The material such as MnSi), member therein
Plain species and element proportioning can change.
3rd, advantage and effect：
1st, perpendicular magnetic anisotropic is strong, heat endurance is high：
Because magnetic tunnel-junction cross sectional dimensions, between 1nm to 150nm, the thickness of ferromagnetic layer one and ferromagnetic layer two is all big
In 6nm, and the thickness of ferromagnetic layer one and ferromagnetic layer two is both greater than the half of cross sectional dimensions, so Effective Magnetic Anisotropy is normal
Number formulaMiddle demagnetizing factor NzLess than Nx,y, shape anisotropy at this timePerpendicular magnetic anisotropic is tended to lead to, so as to by selecting appropriate cross sectional dimensions, iron
The parameter such as magnetic coating thickness and shape of cross section makes ferromagnetic layer one and the ferromagnetic layer two have strong perpendicular magnetic anisotropic and the high fever steady
It is qualitative, as shown in region two in Fig. 2 B.
2nd, cross sectional dimensions is small：
Because magnetic tunnel-junction cross sectional dimensions, between 1nm to 150nm, the thickness of ferromagnetic layer one and ferromagnetic layer two is all big
In 6nm, and the thickness of ferromagnetic layer one and ferromagnetic layer two is both greater than the half of cross sectional dimensions, so transversal when magnetic tunnel-junction
During the size reduction of face, it can ensure that ferromagnetic layer one and ferromagnetic layer two have enough by selecting appropriate ferromagnetic layer thickness
Perpendicular magnetic anisotropic and heat endurance, as shown in the region two in Fig. 2 B so that magnetic tunnel-junction can have it is less transversal
Face size, helps to increase storage density.
3rd, magneto damped coefficient is small, spin-transfer torque upset is efficient；
Because magnetic tunnel-junction cross sectional dimensions, between 1nm to 150nm, the thickness of ferromagnetic layer one and ferromagnetic layer two is all big
In 6nm, and the thickness of ferromagnetic layer one and ferromagnetic layer two is both greater than the half of cross sectional dimensions, so ferromagnetic layer one and ferromagnetic layer
Two thickness is generally higher than the ferromagnetic layer thickness in the magnetic tunnel-junction based on perpendicular magnetic anisotropic in face, so that ferromagnetic layer one
There is less magneto damped coefficient and higher spin-transfer torque upset efficiency with ferromagnetic layer two, and then help to reduce critical
Reset current density and data write-in power consumption.
4th, the film number of plies is few, reduces the complexity of film growth：
Because magnetic tunnel-junction cross sectional dimensions, between 1nm to 150nm, the thickness of ferromagnetic layer one and ferromagnetic layer two is all big
In 6nm, and the thickness of ferromagnetic layer one and ferromagnetic layer two is both greater than the half of cross sectional dimensions, it is possible to appropriate by selecting
Cross sectional dimensions, ferromagnetic layer thickness and shape of cross section etc. come make ferromagnetic layer one and ferromagnetic layer two have strong perpendicular magnetic respectively to
The opposite sex and high thermal stability, without strengthening perpendicular magnetic respectively to different using double interfacial structures or Co/Pt multilayer films
Property, therefore the film number of plies is few, helps to reduce the complexity of film growth.
【Brief description of the drawings】
Fig. 1 is a kind of schematic diagram of the magnetic tunnel-junction based on interface perpendicular magnetic anisotropic.The cross section of the magnetic tunnel-junction
Shape is circle, and ferromagnetic layer thickness is less than the half of cross-sectional diameter, and interface perpendicular magnetic anisotropic can overcome demagnetizing field to make
With making the easy axis of ferromagnetic layer perpendicular to thin film planar.
Fig. 2A is the thermostabilization factor of magnetic tunnel-junction free layer in the prior art with the situation of change of cross-sectional diameter.With
Cross-sectional diameter reduction, the thermostabilization factor of free layer significantly reduces.
Fig. 2 B are the thermostabilization factor with cross-sectional diameter and the situation of change of free layer thickness.Boundary is based in the prior art
The magnetic tunnel-junction of face perpendicular magnetic anisotropic requires that the cross sectional dimensions of magnetic tunnel-junction is larger, free layer thickness is smaller, so as to protect
The larger thermostabilization factor is held, as shown in region one；The cross sectional dimensions of magnetic tunnel-junction provided by the invention is in 1nm to 150nm
Between, the thickness of ferromagnetic layer one and ferromagnetic layer two is both greater than 6nm, and the thickness of ferromagnetic layer one and ferromagnetic layer two is both greater than transversal
The half of face size, stronger perpendicular magnetic anisotropic and heat endurance are obtained by shape anisotropy, such as the institute of region two
Show.
Fig. 3 A are a kind of schematic diagram of the magnetic tunnel-junction with strong perpendicular magnetic anisotropic, are ferromagnetic successively from top to bottom
Layer one, barrier layer, ferromagnetic layer two, and ferromagnetic layer two has than one stronger heat endurance of ferromagnetic layer.
Fig. 3 B are a kind of schematic diagram of the magnetic tunnel-junction with strong perpendicular magnetic anisotropic, are ferromagnetic successively from top to bottom
Layer one, barrier layer, ferromagnetic layer two, and ferromagnetic layer one has than two stronger heat endurance of ferromagnetic layer.
Fig. 4 A are the schematic diagram of embodiment one.
Fig. 4 B are the schematic diagram of embodiment two.
【Embodiment】
Following embodiments are merely to illustrate the present invention, but are not limited to the invention scope of the present invention.Its specific structure
Details and function detail be only used for describing specific embodiment, therefore, can by it is many it is selectable in the form of implement the present invention,
And the present invention is not construed as being limited only to the example embodiment herein proposed, but it should cover and fall into the present invention
In the range of all changes, equivalent and refill.In addition, attached drawing is schematic diagram, each functional layer being directed to or area
The non-actual size of thickness in domain.
Embodiment one：
In the present embodiment, using magnetron sputtering mode according to order from top to bottom by cushion, ferromagnetic layer one, gesture
Barrier layer, ferromagnetic layer two and cap layer deposition are in the silicon base of thermal oxide, as shown in Figure 4 A.Wherein, the material of cushion is
Ta, thickness 5nm；The material of ferromagnetic layer one is Co20Fe60B20, thickness 20nm；The material of barrier layer is MgO, and thickness is
1nm；The material of ferromagnetic layer two is Co20Fe60B20, thickness 30nm；The material of coating is Ta, thickness 5nm.Finally carry out
Photoetching, etching etc. are processed, and shape of cross section is circular, a diameter of 10nm.Cushion can have reduction surface roughness, promote
The effects such as the growth crystal orientation formation of multilayer film, coating can have the effects such as anti-oxidation, reduction surface roughness.
The cushion refers to one layer of conductor material below ferromagnetic layer one, and such conductor material can also be all
Such as ruthenium (Ru), tungsten (W), hafnium (Hf), molybdenum (Mo), golden (Au), platinum (Pt), bismuth (Bi), target (Pd), silver-colored (Ag), iridium (Ir), niobium
(Nb), the metal or alloy of copper (Cu), chromium (Cr), iridium manganese (IrMn), platinum manganese (PtMn), Jin Meng (AuMn) etc, but it is unlimited
In above-mentioned material.Thickness is generally 0.1-1000nm, can have the growth crystal orientation shape for reducing surface roughness, promoting multilayer film
Into, adjust the effect such as perpendicular magnetic anisotropic.
The coating refers to one layer of conductor material above ferromagnetic layer two, and such conductor material can also be all
Such as ruthenium (Ru), tungsten (W), hafnium (Hf), molybdenum (Mo), golden (Au), platinum (Pt), bismuth (Bi), target (Pd), silver-colored (Ag), iridium (Ir), niobium
(Nb), the metal or alloy of copper (Cu), chromium (Cr), iridium manganese (IrMn), platinum manganese (PtMn), Jin Meng (AuMn) etc, but it is unlimited
In above-mentioned material.Thickness is generally 0.1-1000nm, can have anti-oxidation, reduction surface roughness, adjust perpendicular magnetic respectively to different
Property etc. effect.
The substrate can also be silicon (Si), glass or other stable chemical performances and the material of surfacing.
Because magnetic tunnel-junction cross-sectional diameter is 10nm, and one thickness of ferromagnetic layer is 20nm, two thickness of ferromagnetic layer is
30nm, so effective magnetic anisotropy constant formulaMiddle demagnetizing factor NzIt is small
In Nx,y, shape anisotropy at this timeCause strong perpendicular magnetic anisotropic, therefore ferromagnetic layer one and ferromagnetic
Layer two has strong perpendicular magnetic anisotropic and high thermal stability.And the heat endurance of ferromagnetic layer two is higher than ferromagnetic layer one, therefore iron
Magnetosphere two can be as the free layer of magnetic tunnel-junction as the reference layer of magnetic tunnel-junction, ferromagnetic layer one.Meanwhile magnetic channel
The cross-sectional diameter of knot is only 10nm, helps to increase storage density.In addition, the thickness as the ferromagnetic layer one of free layer is high
Up to 20nm, so that with less magneto damped coefficient and higher spin-transfer torque upset efficiency, help to reduce critical upset
Current density and data write-in power consumption.Simultaneously as ferromagnetic layer one and ferromagnetic layer two all have sufficiently high perpendicular magnetic respectively to different
Property and heat endurance, so perpendicular magnetic anisotropic need not be strengthened using double interfacial structures or Co/Pt multilayer films, from
And the film number of plies is few, help to reduce the complexity of film growth.
Embodiment two：
In the present embodiment, using magnetron sputtering mode according to order from top to bottom by cushion, ferromagnetic layer one, gesture
Barrier layer, ferromagnetic layer two and cap layer deposition are in the silicon base of thermal oxide, as shown in Figure 4 B.Wherein, the material of cushion is
Ta, thickness 5nm；The material of ferromagnetic layer one is Co20Fe60B20, thickness 30nm；Abarrier layer material is MgO, and thickness is 1nm；
The material of ferromagnetic layer two is Co20Fe60B20, thickness 20nm；The material of coating is Ta, thickness 5nm.Finally carry out light
The processing such as quarter, etching, shape of cross section is circular, a diameter of 10nm.Cushion can be more with reduction surface roughness, promotion
The effects such as the growth crystal orientation formation of tunic, coating can have the effects such as anti-oxidation, reduction surface roughness.
The cushion refers to one layer of conductor material below ferromagnetic layer one, and such conductor material can also be all
Such as ruthenium (Ru), tungsten (W), hafnium (Hf), molybdenum (Mo), golden (Au), platinum (Pt), bismuth (Bi), target (Pd), silver-colored (Ag), iridium (Ir), niobium
(Nb), the metal or alloy of copper (Cu), chromium (Cr), iridium manganese (IrMn), platinum manganese (PtMn), Jin Meng (AuMn) etc, but it is unlimited
In above-mentioned material.Thickness is generally 0.1-1000nm, can have the growth crystal orientation shape for reducing surface roughness, promoting multilayer film
Into, adjust the effect such as perpendicular magnetic anisotropic.
The coating refers to one layer of conductor material above ferromagnetic layer two, and such conductor material can also be all
Such as ruthenium (Ru), tungsten (W), hafnium (Hf), molybdenum (Mo), golden (Au), platinum (Pt), bismuth (Bi), target (Pd), silver-colored (Ag), iridium (Ir), niobium
(Nb), the metal or alloy of copper (Cu), chromium (Cr), iridium manganese (IrMn), platinum manganese (PtMn), Jin Meng (AuMn) etc, but it is unlimited
In above-mentioned material.Thickness is generally 0.1-1000nm, can have anti-oxidation, reduction surface roughness, adjust perpendicular magnetic respectively to different
Property etc. effect.
The substrate can also be silicon (Si), glass or other stable chemical performances and the material of surfacing.
Because magnetic tunnel-junction cross-sectional diameter is 10nm, and one thickness of ferromagnetic layer is 30nm, two thickness of ferromagnetic layer is
20nm, so effective magnetic anisotropy constant formulaMiddle demagnetizing factor NzIt is small
In Nx,y, shape anisotropy at this timeCause strong perpendicular magnetic anisotropic, therefore ferromagnetic layer one and ferromagnetic
Layer two has strong perpendicular magnetic anisotropic and high thermal stability.And the heat endurance of ferromagnetic layer one is higher than ferromagnetic layer two, therefore iron
Magnetosphere one can be as the free layer of magnetic tunnel-junction as the reference layer of magnetic tunnel-junction, ferromagnetic layer two.Meanwhile magnetic channel
The cross-sectional diameter of knot is only 10nm, helps to increase storage density.In addition, the thickness as the ferromagnetic layer two of free layer is high
Up to 20nm, so that with less magneto damped coefficient and higher spin-transfer torque upset efficiency, help to reduce critical upset
Current density and data write-in power consumption.Simultaneously as ferromagnetic layer one and ferromagnetic layer two all have sufficiently high perpendicular magnetic respectively to different
Property and heat endurance, so perpendicular magnetic anisotropic need not be strengthened using double interfacial structures or Co/Pt multilayer films, from
And the film number of plies is few, help to reduce the complexity of film growth.
Embodiment three：
In the present embodiment, using magnetron sputtering mode according to order from top to bottom by cushion, ferromagnetic layer one, gesture
Barrier layer, ferromagnetic layer two and cap layer deposition are in the silicon base of thermal oxide.Wherein, the material of cushion is W, thickness 8nm；
The material of ferromagnetic layer one is Co40Fe40B20, thickness 100nm；The material of barrier layer is MgO, and thickness is 1.5nm；Ferromagnetic layer two
Material be Co40Fe40B20, thickness 120nm；The material of coating is W, thickness 5nm.Finally carry out photoetching, etching etc.
Processing, shape of cross section is circular, a diameter of 1nm.Cushion can have the growth for reducing surface roughness, promoting multilayer film
The effects such as crystal orientation formation, coating can have the effects such as anti-oxidation, reduction surface roughness.
Because magnetic tunnel-junction cross-sectional diameter is 1nm, and one thickness of ferromagnetic layer is 100nm, two thickness of ferromagnetic layer is
120nm, so effective magnetic anisotropy constant formulaMiddle demagnetizing factor NzIt is small
In Nx,y, shape anisotropy at this timeCause strong perpendicular magnetic anisotropic, therefore ferromagnetic layer one and ferromagnetic
Layer two has strong perpendicular magnetic anisotropic and high thermal stability.And the heat endurance of ferromagnetic layer two is higher than ferromagnetic layer one, therefore iron
Magnetosphere two can be as the free layer of magnetic tunnel-junction as the reference layer of magnetic tunnel-junction, ferromagnetic layer one.Meanwhile magnetic channel
The cross-sectional diameter of knot is only 1nm, helps to increase storage density.In addition, the thickness as the ferromagnetic layer one of free layer is up to
100nm, so that with less magneto damped coefficient and higher spin-transfer torque upset efficiency, helps to reduce critical upset
Current density and data write-in power consumption.Simultaneously as ferromagnetic layer one and ferromagnetic layer two all have sufficiently high perpendicular magnetic respectively to different
Property and heat endurance, so perpendicular magnetic anisotropic need not be strengthened using double interfacial structures or Co/Pt multilayer films, from
And the film number of plies is few, help to reduce the complexity of film growth.
Example IV：
In the present embodiment, using magnetron sputtering mode according to order from top to bottom by cushion, ferromagnetic layer one, gesture
Barrier layer, ferromagnetic layer two and cap layer deposition are in the silicon base of thermal oxide.Wherein, the material of cushion is Mo, thickness 5nm；
The material of ferromagnetic layer one is Co20Fe80, thickness 80nm；The material of barrier layer is Al2O3, thickness is 5nm；The material of ferromagnetic layer two
Material is Co20Fe80, thickness 100nm；The material of coating is Mo, thickness 5nm.The processing such as photoetching, etching is finally carried out, it is horizontal
Cross sectional shape is circular, a diameter of 150nm.Cushion can have the growth crystal orientation shape for reducing surface roughness, promoting multilayer film
Acted on into waiting, coating there can be the effects such as anti-oxidation, reduction surface roughness.
Because magnetic tunnel-junction cross-sectional diameter is 150nm, and one thickness of ferromagnetic layer is 80nm, two thickness of ferromagnetic layer is
100nm, so effective magnetic anisotropy constant formulaMiddle demagnetizing factor NzIt is small
In Nx,y, shape anisotropy at this timeCause strong perpendicular magnetic anisotropic, therefore ferromagnetic layer one and ferromagnetic
Layer two has strong perpendicular magnetic anisotropic and high thermal stability.And the heat endurance of ferromagnetic layer two is higher than ferromagnetic layer one, therefore iron
Magnetosphere two can be as the free layer of magnetic tunnel-junction as the reference layer of magnetic tunnel-junction, ferromagnetic layer one.In addition, as certainly
80nm is up to by the thickness of the ferromagnetic layer one of layer, so as to be overturn with less magneto damped coefficient and higher spin-transfer torque
Efficiency, helps to reduce critical reset current density and data write-in power consumption.Simultaneously as ferromagnetic layer one and ferromagnetic layer two are all
With sufficiently high perpendicular magnetic anisotropic and heat endurance, so double interfacial structures or Co/Pt multilayer films need not be used
To strengthen perpendicular magnetic anisotropic, so that the film number of plies is few, help to reduce the complexity of film growth.
Embodiment five：
In the present embodiment, using molecular beam epitaxy mode according to order from top to bottom by cushion, ferromagnetic layer one,
Barrier layer, ferromagnetic layer two and cap layer deposition are in the silicon base of thermal oxide.Wherein, the material of cushion is Ru, and thickness is
10nm；The material of ferromagnetic layer one is Co2FeAl, thickness 11nm；The material of barrier layer is MgAl2O4, thickness is 2nm；It is ferromagnetic
The material of layer two is Co2FeAl, thickness 20nm；The material of coating is Ru, thickness 5nm.Finally carry out photoetching, etching
Deng processing, shape of cross section is circular, a diameter of 20nm.Cushion can have the life for reducing surface roughness, promoting multilayer film
The effects such as long crystal orientation formation, coating can have the effects such as anti-oxidation, reduction surface roughness.
Because magnetic tunnel-junction cross-sectional diameter is 20nm, and one thickness of ferromagnetic layer is 11nm, two thickness of ferromagnetic layer is
20nm, so effective magnetic anisotropy constant formulaMiddle demagnetizing factor NzIt is small
In Nx,y, shape anisotropy at this timeCause strong perpendicular magnetic anisotropic, therefore ferromagnetic layer one and ferromagnetic
Layer two has strong perpendicular magnetic anisotropic and high thermal stability.And the heat endurance of ferromagnetic layer two is higher than ferromagnetic layer one, therefore iron
Magnetosphere two can be as the free layer of magnetic tunnel-junction as the reference layer of magnetic tunnel-junction, ferromagnetic layer one.Meanwhile magnetic channel
The cross-sectional diameter of knot is only 20nm, helps to increase storage density.In addition, the thickness as the ferromagnetic layer one of free layer is high
Up to 11nm, so that with less magneto damped coefficient and higher spin-transfer torque upset efficiency, help to reduce critical upset
Current density and data write-in power consumption.Simultaneously as ferromagnetic layer one and ferromagnetic layer two all have sufficiently high perpendicular magnetic respectively to different
Property and heat endurance, so perpendicular magnetic anisotropic need not be strengthened using double interfacial structures or Co/Pt multilayer films, from
And the film number of plies is few, help to reduce the complexity of film growth.
Embodiment six：
In the present embodiment, using atomic layer deposition mode according to order from top to bottom by cushion, ferromagnetic layer one,
Barrier layer, ferromagnetic layer two and cap layer deposition are in the silicon base of thermal oxide.Wherein, the material of cushion is Hf, and thickness is
5nm；The material of ferromagnetic layer one is Fe80B20, thickness 30nm；The material of barrier layer is MgO, and thickness is 1.5nm；Ferromagnetic layer two
Material be Fe80B20, thickness 40nm；The material of coating is Hf, thickness 5nm.Photoetching, etching etc. is finally carried out to add
Work, shape of cross section is circular, a diameter of 50nm.Cushion can have the growth crystalline substance for reducing surface roughness, promoting multilayer film
To the effect such as formation, coating can have the effects such as anti-oxidation, reduction surface roughness.
Because magnetic tunnel-junction cross-sectional diameter is 50nm, and one thickness of ferromagnetic layer is 30nm, two thickness of ferromagnetic layer is
40nm, so effective magnetic anisotropy constant formulaMiddle demagnetizing factor NzIt is small
In Nx,y, shape anisotropy at this timeCause strong perpendicular magnetic anisotropic, therefore ferromagnetic layer one and ferromagnetic
Layer two has strong perpendicular magnetic anisotropic and high thermal stability.And the heat endurance of ferromagnetic layer two is higher than ferromagnetic layer one, therefore iron
Magnetosphere two can be as the free layer of magnetic tunnel-junction as the reference layer of magnetic tunnel-junction, ferromagnetic layer one.Meanwhile magnetic channel
The cross-sectional diameter of knot is only 50nm, helps to increase storage density.In addition, the thickness as the ferromagnetic layer one of free layer is high
Up to 30nm, so that with less magneto damped coefficient and higher spin-transfer torque upset efficiency, help to reduce critical upset
Current density and data write-in power consumption.Simultaneously as ferromagnetic layer one and ferromagnetic layer two all have sufficiently high perpendicular magnetic respectively to different
Property and heat endurance, so perpendicular magnetic anisotropic need not be strengthened using double interfacial structures or Co/Pt multilayer films, from
And the film number of plies is few, help to reduce the complexity of film growth.
Embodiment seven：
In the present embodiment, using magnetron sputtering mode according to order from top to bottom by cushion, ferromagnetic layer one, gesture
Barrier layer, ferromagnetic layer two and cap layer deposition are in the silicon base of thermal oxide.Wherein, the material of cushion is Pt, thickness 8nm；
The material of ferromagnetic layer one is Co, thickness 45nm；The material of barrier layer is Bi2Se3, thickness is 2nm；The material of ferromagnetic layer two is
Co, thickness 60nm；The material of coating is Pt, thickness 5nm.Finally carry out the processing such as photoetching, etching, shape of cross section
For circle, a diameter of 80nm.Cushion can have the effects such as reduce surface roughness, the growth crystal orientation of promotion multilayer film is formed,
Coating can have the effects such as anti-oxidation, reduction surface roughness.
Because magnetic tunnel-junction cross-sectional diameter is 80nm, and one thickness of ferromagnetic layer is 45nm, two thickness of ferromagnetic layer is
60nm, so effective magnetic anisotropy constant formulaMiddle demagnetizing factor NzIt is small
In Nx,y, shape anisotropy at this timeCause strong perpendicular magnetic anisotropic, therefore ferromagnetic layer one and ferromagnetic
Layer two has strong perpendicular magnetic anisotropic and high thermal stability.And the heat endurance of ferromagnetic layer two is higher than ferromagnetic layer one, therefore iron
Magnetosphere two can be as the free layer of magnetic tunnel-junction as the reference layer of magnetic tunnel-junction, ferromagnetic layer one.Meanwhile magnetic channel
The cross-sectional diameter of knot is only 80nm, helps to increase storage density.In addition, the thickness as the ferromagnetic layer one of free layer is high
Up to 45nm, so that with less magneto damped coefficient and higher spin-transfer torque upset efficiency, help to reduce critical upset
Current density and data write-in power consumption.Simultaneously as ferromagnetic layer one and ferromagnetic layer two all have sufficiently high perpendicular magnetic respectively to different
Property and heat endurance, so perpendicular magnetic anisotropic need not be strengthened using double interfacial structures or Co/Pt multilayer films, from
And the film number of plies is few, help to reduce the complexity of film growth.
Embodiment eight：
In the present embodiment, using magnetron sputtering mode according to order from top to bottom by cushion, ferromagnetic layer one, gesture
Barrier layer, ferromagnetic layer two and cap layer deposition are in the silicon base of thermal oxide.Wherein, the material of cushion is Ta, thickness 8nm；
The material of ferromagnetic layer one is Co2MnSi, thickness 55nm；The material of barrier layer is MgO, and thickness is 2nm；The material of ferromagnetic layer two
Material is Co2MnSi, thickness 75nm；The material of coating is Ta, thickness 5nm.The processing such as photoetching, etching is finally carried out, it is horizontal
Cross sectional shape is circular, a diameter of 100nm.Cushion can have the growth crystal orientation shape for reducing surface roughness, promoting multilayer film
Acted on into waiting, coating there can be the effects such as anti-oxidation, reduction surface roughness.
Because magnetic tunnel-junction cross-sectional diameter is 100nm, and one thickness of ferromagnetic layer is 55nm, two thickness of ferromagnetic layer is
75nm, so effective magnetic anisotropy constant formulaMiddle demagnetizing factor NzIt is small
In Nx,y, shape anisotropy at this timeCause strong perpendicular magnetic anisotropic, therefore ferromagnetic layer one and ferromagnetic
Layer two has strong perpendicular magnetic anisotropic and high thermal stability.And the heat endurance of ferromagnetic layer two is higher than ferromagnetic layer one, therefore iron
Magnetosphere two can be as the free layer of magnetic tunnel-junction as the reference layer of magnetic tunnel-junction, ferromagnetic layer one.In addition, as certainly
55nm is up to by the thickness of the ferromagnetic layer one of layer, so as to be overturn with less magneto damped coefficient and higher spin-transfer torque
Efficiency, helps to reduce critical reset current density and data write-in power consumption.Simultaneously as ferromagnetic layer one and ferromagnetic layer two are all
With sufficiently high perpendicular magnetic anisotropic and heat endurance, so double interfacial structures or Co/Pt multilayer films need not be used
To strengthen perpendicular magnetic anisotropic, so that the film number of plies is few, help to reduce the complexity of film growth.
Finally it should be noted that although the present invention is described in detail with reference to embodiment, those skilled in the art
Member should be appreciated that the essence to technical scheme technical scheme is modified or replaced equivalently without departure from technical solution of the present invention
God and scope, it should all cover among scope of the presently claimed invention.
Claims (10)
1. a kind of magnetic tunnel-junction with strong perpendicular magnetic anisotropic, its structure be followed successively by from top to bottom ferromagnetic layer one, barrier layer,
Ferromagnetic layer two；It is characterized in that：The cross sectional dimensions of magnetic tunnel-junction between 1nm to 150nm, ferromagnetic layer one and ferromagnetic layer two
Thickness is both greater than 6nm, and the thickness of ferromagnetic layer one and ferromagnetic layer two is both greater than the half of cross sectional dimensions；The thickness of barrier layer is
0.2-10nm。
A kind of 2. magnetic tunnel-junction with strong perpendicular magnetic anisotropic according to claim 1, it is characterised in that：When ferromagnetic
The heat endurance of layer two is more than ferromagnetic layer for the moment, using ferromagnetic layer two as refer to layer, ferromagnetic layer one is as free layer；Work as ferromagnetic layer
When one heat endurance is more than ferromagnetic layer two, using ferromagnetic layer one as with reference to layer, ferromagnetic layer two is as free layer.
A kind of 3. magnetic tunnel-junction with strong perpendicular magnetic anisotropic according to claim 1 or 2, it is characterised in that：Institute
The shape of cross section for stating magnetic tunnel-junction is circular, oval, square or rectangle.
A kind of 4. magnetic tunnel-junction with strong perpendicular magnetic anisotropic according to claim 3, it is characterised in that：When transversal
When face shape is circular, the cross sectional dimensions refers to the circular diameter；It is described when shape of cross section is ellipse
Cross sectional dimensions refers to the length of the oval major axis；When shape of cross section is square, the cross sectional dimensions is
Refer to the square length of side；When shape of cross section is rectangle, the cross sectional dimensions refers to the rectangular long length of side
Degree.
A kind of 5. magnetic tunnel-junction with strong perpendicular magnetic anisotropic according to claim 1 or 2, it is characterised in that：
Ferromagnetic layer one also has cushion and the plural layers of substrate below, also has the plural layers of coating on ferromagnetic layer two.
A kind of 6. magnetic tunnel-junction with strong perpendicular magnetic anisotropic according to claim 1 or 2, it is characterised in that：Institute
State ferromagnetic layer one and ferromagnetic layer two refers to the film layer that ferromagnetic material is formed, including ferro-cobalt boron CoFeB, iron boron FeB, ferro-cobalt
The combination of CoFe, iron Fe, one or more of materials in cobalt Co, Heusler alloy Heusler Alloy materials.
A kind of 7. magnetic tunnel-junction with strong perpendicular magnetic anisotropic according to claim 6, it is characterised in that：Described
The element proportioning of CoFeB is Co20Fe60B20、Co40Fe40B20Or Co60Fe20B20；The element proportioning of the FeB is Fe80B20；
The element proportioning of the CoFe is Co50Fe50、Co20Fe80Or Co80Fe20；The Heusler alloys are ferro-cobalt aluminium
Co2FeAl or cobalt manganese silicon Co2MnSi；Here the percentage of digitized representation element.
A kind of 8. magnetic tunnel-junction with strong perpendicular magnetic anisotropic according to claim 1 or 2, it is characterised in that：Institute
State barrier layer and refer to the film layer that the insulating material of metal oxide is formed, including the oxidation of magnesium oxide, aluminum oxide, magnalium
Thing, hafnium oxide, tantalum pentoxide, bismuth telluride Bi2Te3, bismuth selenide Bi2Se3The combination of one or more of materials in material.
A kind of 9. magnetic tunnel-junction with strong perpendicular magnetic anisotropic according to claim 8, it is characterised in that：Magnesia
Thing is magnesia MgO, aluminum oxide is alundum (Al2O3) Al2O3, magnesium aluminum oxide be meta-aluminic acid magnesium MgAl2O4。
10. according to claim 1 or a kind of magnetic tunnel-junction with strong perpendicular magnetic anisotropic, it is characterised in that：Institute
The magnetic tunnel-junction stated is according under using traditional magnetron sputtering, molecular beam epitaxy or Atomic layer deposition method by layers of material
It is grown in upper order in substrate or multilayer film, then carries out photoetching, the conventional nanoscale device processing technology of etching is made
Standby, the cross-sectional area of each film layer is equal.
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