CN111668364B - Preparation method of magnetic memory device and magnetic memory device - Google Patents
Preparation method of magnetic memory device and magnetic memory device Download PDFInfo
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- CN111668364B CN111668364B CN202010545330.4A CN202010545330A CN111668364B CN 111668364 B CN111668364 B CN 111668364B CN 202010545330 A CN202010545330 A CN 202010545330A CN 111668364 B CN111668364 B CN 111668364B
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- 238000002360 preparation method Methods 0.000 title abstract description 10
- 238000005530 etching Methods 0.000 claims abstract description 59
- 239000000463 material Substances 0.000 claims abstract description 56
- 238000000034 method Methods 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 239000000696 magnetic material Substances 0.000 claims description 21
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 239000002131 composite material Substances 0.000 claims description 5
- 239000002184 metal Substances 0.000 abstract description 21
- 229910052751 metal Inorganic materials 0.000 abstract description 21
- 229920002120 photoresistant polymer Polymers 0.000 description 13
- 238000010586 diagram Methods 0.000 description 11
- 238000001020 plasma etching Methods 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 4
- 239000007769 metal material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 210000000352 storage cell Anatomy 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
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- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
Abstract
The invention provides a preparation method of a magnetic memory device and the magnetic memory device, wherein the preparation method comprises the following steps: providing a substrate, wherein the substrate is provided with a bottom electrode; arranging an auxiliary layer on the bottom electrode; a magnetic tunnel junction is disposed on the auxiliary layer. In the above scheme, the auxiliary layer is arranged above the bottom electrode, and then the magnetic tunnel junction is arranged on the auxiliary layer, so that a physical height difference exists between the magnetic tunnel junction and the auxiliary layer, the metal redeposition phenomenon on the side wall of the magnetic tunnel junction is reduced, and the short circuit of the magnetic memory device is prevented. Due to the height difference between the magnetic tunnel junction and the auxiliary layer, the influence of etching on different material layers in the magnetic tunnel junction in the process of forming the magnetic tunnel junction in an etching mode can be reduced, and the yield and the performance of the magnetic tunnel junction are improved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a preparation method of a magnetic memory device and the magnetic memory device.
Background
Magnetic Random Access Memory (MRAM) uses Magnetic Tunnel Junctions (MTJ) as basic information storage cells. MRAM has fast read/write characteristics of SRAM (Static Random-Access Memory) and high-density integration characteristics of DRAM (Dynamic Random-Access Memory), and is a next-generation nonvolatile Memory with great potential. As a main device, the preparation process flow of the magnetic tunnel junction is extremely complex and important. The MTJ ETCH (etching) is particularly important because the MTJ device needs to be etched from tens of metal films to form a circular device, and the roundness and uniformity of the circle are critical to the read/write performance of the device.
The current method of fabricating magnetic memory devices is to deposit a magnetic tunnel junction directly on the bottom electrode. Specifically, referring to fig. 1, a multi-layer material layer 2 in a magnetic tunnel junction is first deposited on a bottom electrode 1; referring to fig. 2, the magnetic tunnel junction 3 is then etched by etching. When the multiple material layers 2 of the magnetic tunnel junction 3 are etched to form the magnetic tunnel junction 3, an IBE (Ion Beam Etching) method is adopted for Etching, although damage and influence of magnetic performance caused by chemical corrosion of RIE (Reactive Ion Etching) to a device can be effectively avoided, the IBE method mainly depends on a physical bombardment mode for Etching, and has extremely strict requirements on a hard mask structure at the top of an MTJ (magnetic tunnel junction) film, and damage to the edge of the device in an Etching process is difficult to control. And physical bombardment easily causes serious damage to a hard mask material at the top of the MTJ device, and influences the reliability of the MTJ device. The etching process has a large influence on the magnetic material layer, and the performance of the MTJ device is influenced. In addition, the redeposition of the metal on the side wall of the MTJ device is serious, the performance of the device is influenced, and short circuit is easily caused.
Disclosure of Invention
The invention provides a preparation method of a magnetic memory device and the magnetic memory device, which are used for improving the performance of the magnetic memory device.
In a first aspect, the present invention provides a method for manufacturing a magnetic memory device, the method comprising: providing a substrate, wherein the substrate is provided with a bottom electrode; arranging an auxiliary layer on the bottom electrode; a magnetic tunnel junction is disposed on the auxiliary layer.
In the above scheme, the auxiliary layer is arranged above the bottom electrode, and then the magnetic tunnel junction is arranged on the auxiliary layer, so that a physical height difference exists between the magnetic tunnel junction and the auxiliary layer, the metal redeposition phenomenon on the side wall of the magnetic tunnel junction is reduced, and the short circuit of the magnetic memory device is prevented. And because of the height difference between the magnetic tunnel junction and the auxiliary layer, the influence of etching on different material layers in the magnetic tunnel junction in the process of forming the magnetic tunnel junction by adopting an etching mode can be reduced, and the yield and the performance of the magnetic tunnel junction are improved.
In a specific embodiment, the step of disposing the auxiliary layer on the bottom electrode is specifically: an auxiliary material layer is deposited on the bottom electrode, and then the auxiliary layer is etched on the auxiliary material layer.
In a specific embodiment, the preparation method further comprises performing CMP on the auxiliary material layer before etching the auxiliary layer on the auxiliary material layer to make the surface of the auxiliary material layer more flat.
In a specific embodiment, the etching of the auxiliary material layer is specifically: depositing a mask layer on the auxiliary material layer; etching the pattern of the auxiliary layer on the mask layer; etching the auxiliary material layer by adopting an etching mode to obtain an auxiliary layer; and removing the mask layer.
In a specific embodiment, the mask layer is one of a hard mask layer, an oxide mask layer, or a composite layer consisting of two layers.
In a specific embodiment, the etching method is used to etch the auxiliary material layer, so as to obtain an auxiliary layer specifically: and etching the auxiliary material layer by adopting one or two etching methods of RIE etching and IBE etching to obtain the auxiliary layer.
In a second aspect, the present invention also provides a magnetic memory device comprising a substrate having a bottom electrode thereon, an assist layer deposited on the bottom electrode, and a magnetic tunnel junction deposited on the assist layer.
In the above scheme, the auxiliary layer is firstly arranged above the bottom electrode, and then the magnetic tunnel junction is arranged on the auxiliary layer, so that a physical height difference exists between the magnetic tunnel junction and the auxiliary layer, the phenomenon of metal redeposition on the side wall of the magnetic tunnel junction is reduced, and the short circuit of the magnetic memory device is prevented. Due to the height difference between the magnetic tunnel junction and the auxiliary layer, the influence of etching on different material layers in the magnetic tunnel junction in the process of forming the magnetic tunnel junction in an etching mode can be reduced, and the yield and the performance of the magnetic tunnel junction are improved.
In a specific embodiment, the material of the auxiliary layer is one or a combination of several of TaN, tiN, ta, ti, W, WN. The short circuit phenomenon of the magnetic memory device is improved by using a light metal which is not easy to cause redeposition or using a metal material which is easier to clean and remove.
In a particular embodiment, the auxiliary layer has a thickness of 5 to 200nm.
In a specific embodiment, the size of the auxiliary layer is larger than the size of the magnetic tunnel junction.
In one specific embodiment, the auxiliary layer and the magnetic tunnel junction have a square cross section in the horizontal direction, and the side length of the cross section of the auxiliary layer in the horizontal direction is 10nm to 200nm larger than the side length of the cross section of the magnetic tunnel junction in the horizontal direction.
In a specific embodiment, the magnetic tunnel junction is a planar magnetic tunnel junction or a perpendicular magnetic tunnel junction.
Drawings
FIG. 1 is a schematic diagram of a prior art magnetic memory device fabrication process;
FIG. 2 is a schematic diagram of a prior art magnetic memory device;
FIG. 3 is a schematic diagram of a magnetic memory device according to an embodiment of the present invention;
FIG. 4 is a flow chart of a method for fabricating a magnetic memory device according to an embodiment of the present invention;
FIG. 5 is a state diagram of a process for fabricating a magnetic memory device according to an embodiment of the present invention;
FIG. 6 is another state diagram of a process for fabricating a magnetic memory device according to an embodiment of the present invention;
FIG. 7 is another state diagram of a process for fabricating a magnetic memory device in accordance with an embodiment of the present invention;
FIG. 8 is another state diagram of a process for fabricating a magnetic memory device in accordance with an embodiment of the present invention;
FIG. 9 is another state diagram illustrating a process for fabricating a magnetic memory device in accordance with embodiments of the present invention;
FIG. 10 is another state diagram in the fabrication of a magnetic memory device according to an embodiment of the present invention;
FIG. 11 is another state diagram illustrating a process for fabricating a magnetic memory device in accordance with an embodiment of the present invention;
FIG. 12 is another state diagram of a process for fabricating a magnetic memory device in accordance with an embodiment of the present invention.
Reference numerals are as follows:
10-bottom electrode 11-metal plug 12-metal layer or device
20-auxiliary layer 21-auxiliary material layer 30-magnetic tunnel junction
31-multiple magnetic material layer of magnetic tunnel junction 40-mask layer
50-Photoresist 60-dielectric protective film
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without making any creative effort based on the embodiments in the present invention, belong to the protection scope of the present invention.
In order to facilitate understanding of the method for manufacturing a magnetic memory device according to the embodiment of the present invention, an application scenario of the method for manufacturing a magnetic memory device according to the embodiment of the present invention is first described below. The method for manufacturing the magnetic memory device will be described in detail below with reference to the accompanying drawings.
Referring to fig. 3 and 4, a preparation method provided by the embodiment of the invention includes:
s10: providing a substrate having a bottom electrode 10 thereon;
s20: providing an auxiliary layer 20 on the bottom electrode 10;
s30: a magnetic tunnel junction 30 is disposed on the auxiliary layer 20.
In the above solution, the auxiliary layer 20 is first disposed above the bottom electrode 10, and then the magnetic tunnel junction 30 is disposed on the auxiliary layer 20, so that there is a physical height difference between the magnetic tunnel junction 30 and the auxiliary layer 20, thereby reducing the metal redeposition phenomenon on the sidewall of the magnetic tunnel junction 30 and preventing the magnetic memory device from being shorted. Due to the height difference between the magnetic tunnel junction 30 and the auxiliary layer 20, the influence of etching on different material layers in the magnetic tunnel junction 30 during the process of forming the magnetic tunnel junction 30 by using an etching method can be reduced, and the yield and the performance of the magnetic tunnel junction 30 can be improved. The above steps will be described in detail with reference to the accompanying drawings.
First, a substrate having a bottom electrode 10 thereon is provided. Specifically, referring to fig. 5, a bottom electrode 10 is disposed on a substrate (not shown), a metal plug 11 is disposed below the bottom electrode 10 (referring to the structure shown in fig. 5), and a metal layer or device 12 is disposed below the metal plug 11 (referring to the structure shown in fig. 5), wherein the device may be a source or a drain of a transistor. The bottom electrode 10 is connected to a metal layer or device 12 by a metal plug 11 to form an interconnect.
Next, an auxiliary layer 20 is provided on the bottom electrode 10. In a specific arrangement, referring to fig. 6, an auxiliary material layer 21 is first deposited on the bottom electrode 10; referring to fig. 7, an auxiliary layer 20 is then etched on the auxiliary material layer 21.
In having a material defining the auxiliary layer 20, the material of the auxiliary layer 20 may be one or a combination of TaN, tiN, ta, ti, W, WN. For example, the material of the auxiliary layer 20 may be only TaN; or only TiN; the material can also be a mixture consisting of Ta and TaN; or a mixture of Ti and TiN; a mixture of W and WN may also be used. The short circuit phenomenon of the magnetic memory device is improved by using a light metal which is not easy to cause redeposition or using a metal material which is easier to clean and remove.
After depositing the auxiliary material layer 21 on the bottom electrode 10 and before etching the auxiliary material layer 20 on the auxiliary material layer 21, CMP may be performed on the auxiliary material layer 21 to planarize the auxiliary material layer 21 so as to make the surface of the auxiliary material layer 21 more planar.
In the specific determination of the thickness of the auxiliary layer 20, the thickness of the auxiliary layer 20 may be 5 to 200nm, and specifically, the thickness of the auxiliary layer 20 may be any value between 5 to 200nm, such as 5nm, 15nm, 30nm, 50nm, 70nm, 90nm, 100nm, 120nm, 140nm, 160nm, 180nm, 200nm, and the like.
When the auxiliary material layer 20 is specifically etched on the auxiliary material layer 21, a mask layer may be deposited on the auxiliary material layer 21; then etching the pattern of the auxiliary layer 20 on the mask layer; etching the auxiliary material layer 21 by adopting an etching mode to obtain an auxiliary layer 20; and removing the mask layer. The mask layer can be one of a hard mask layer and an oxide mask layer or a composite layer consisting of two layers. Specifically, the mask layer may only have one hard mask layer; the mask layer can also be formed by only one oxide mask layer; the mask layer can also be composed of a composite layer composed of two mask layers, namely a hard mask layer and an oxide mask layer.
When the auxiliary material layer 21 is etched by using an etching method to obtain the auxiliary layer 20, the auxiliary material layer 21 may be etched by using one or two etching methods of RIE etching and IBE etching to obtain the auxiliary layer 20.
It should be understood that the manner of etching the auxiliary material layer 20 on the auxiliary material layer 21 is not limited to the manner of depositing the mask layer on the auxiliary material layer 21, and other manners may be adopted. For example, the auxiliary material layer 21 may be etched directly by photolithography. Specifically, a layer of photoresist is deposited on the auxiliary material layer 21; then exposing a portion on the photoresist to form an auxiliary layer 20 pattern on the photoresist; then etching the auxiliary layer 20 by adopting an etching mode; and then, carrying out full exposure on the photoresist to remove the photoresist.
Next, a magnetic tunnel junction 30 is disposed on the auxiliary layer 20. In particular, referring to fig. 8, a plurality of magnetic material layers 31 of the magnetic tunnel junction 30 are first deposited on the auxiliary layer 20 and the bottom electrode 10 layer. The size of the auxiliary layer 20 may be set larger than the size of the magnetic tunnel junction 30. When the magnetic tunnel junction is provided, the horizontal cross-sections of the auxiliary layer 20 and the magnetic tunnel junction 30 may be square, and the side length of the horizontal cross-section of the auxiliary layer 20 may be larger than the side length of the horizontal cross-section of the magnetic tunnel junction 30 by 10nm to 200nm, and specifically, the side length of the horizontal cross-section of the auxiliary layer 20 may be larger than the side length of the horizontal cross-section of the magnetic tunnel junction 30 by any value between 10nm to 200nm, such as 10nm, 20nm, 30nm, 50nm, 70nm, 90nm, 100nm, 120nm, 140nm, 160nm, 180nm, or 200nm. The horizontal cross section of the auxiliary layer 20 and the magnetic tunnel junction 30 refers to a cross section of the auxiliary layer 20 and the magnetic tunnel junction 30 parallel to the substrate surface. It should be understood that the cross-sectional shapes of the auxiliary layer 20 and the magnetic tunnel junction 30 in the horizontal direction are not limited to the square shape shown above, and other shapes may be adopted. I.e., as long as the arrangement that the size of the magnetic tunnel junction 30 is smaller than the size of the auxiliary layer 20 is satisfied, is within the scope of the embodiments of the present invention.
Due to the auxiliary layer 20, the multi-layer magnetic material layer 31 of the magnetic tunnel junction 30 partially covers the auxiliary layer 20, partially covers the sidewall of the auxiliary layer 20, and partially covers the bottom electrode 10, so that the multi-layer magnetic material layer 31 of the magnetic tunnel junction 30 is not a planar structure in space, and has protrusions and depressions.
Referring to fig. 9, a mask layer 40 is then deposited on the multiple magnetic material layers 31 of the magnetic tunnel junction 30, where the mask layer 40 may be specifically a metal hard mask layer, an oxide mask layer, or a composite layer composed of a metal hard mask layer and an oxide mask layer. Also due to the presence of the auxiliary layer 20, the mask layer 40 is not spatially planar, but it also has protrusions and depressions.
A photoresist 50 is then deposited over masking layer 40. Referring to fig. 10, next, the photoresist 50 is partially exposed to copy the pattern of the magnetic tunnel junction 30 onto the photoresist 50. Specifically, the photoresist 50 that is not exposed is located above the auxiliary layer 20, so that the mask layer 40 covering the sidewalls of the auxiliary layer 20 and the bottom electrode 10 is not covered by the photoresist 50.
The magnetic tunnel junction 30 is then etched by etching. Specifically, the mask layer 40 may be etched by using an etching method such as, but not limited to, IBE method, RIE method, etc., to transfer the pattern of the magnetic tunnel junction 30 to the mask layer 40; then, performing all photoresist 50 on the photoresist 50; the multiple layers of magnetic material 31 of the magnetic tunnel junction 30 are then etched, again using an etching method such as, but not limited to, IBE method, RIE method, etc., to form the magnetic tunnel junction 30. Because the multiple magnetic material layers 31 in the magnetic tunnel junction 30 only remain the portion above the auxiliary layer 20, the multiple magnetic material layers 31 covering the side wall of the auxiliary layer 20 and the bottom electrode 10 are etched away, and there is a physical height difference between the magnetic tunnel junction 30 and the bottom electrode 10, so that the metal redeposition phenomenon on the side wall of the magnetic tunnel junction 30 can be effectively reduced, thereby preventing short circuit between different magnetic material layers of the magnetic tunnel junction 30, improving reliability and stability of the magnetic memory device, and improving yield of the product. In addition, also due to the physical height difference between the magnetic tunnel junction 30 and the bottom electrode 10, it can reduce the influence of the etching process on the magnetic material layer, especially the influence of the periphery and the sidewall of the magnetic memory device.
The magnetic tunnel junction 30 may be a planar magnetic tunnel junction 30 or a perpendicular magnetic tunnel junction 30.
In addition, referring to fig. 12, a dielectric protective film 60 may be further plated on the surfaces and sidewalls of the magnetic tunnel junction 30, the auxiliary layer 20, and the bottom electrode 10, and the dielectric protective film 60 is non-conductive and non-magnetic to protect the magnetic memory device. When the material of the dielectric protective film 60 is specifically determined, the material thereof may include, but is not limited to, silicon oxide, silicon nitride, silicon carbide, nitrogen-doped silicon carbide, or a compound thereof.
By first disposing the auxiliary layer 20 above the bottom electrode 10 and then disposing the magnetic tunnel junction 30 on the auxiliary layer 20, a physical height difference exists between the magnetic tunnel junction 30 and the auxiliary layer 20 to reduce a metal redeposition phenomenon on a sidewall of the magnetic tunnel junction 30 and prevent a short circuit of the magnetic memory device. And due to the height difference between the magnetic tunnel junction 30 and the auxiliary layer 20, the influence of etching on different material layers in the magnetic tunnel junction 30 in the process of forming the magnetic tunnel junction 30 by adopting an etching mode can be reduced, and the yield and the performance of the magnetic tunnel junction 30 are improved.
In addition, the present invention also provides a magnetic memory device comprising a substrate having a bottom electrode 10 thereon, an auxiliary layer 20 deposited on the bottom electrode 10, and a magnetic tunnel junction 30 deposited on the auxiliary layer 20. By first disposing the auxiliary layer 20 above the bottom electrode 10 and then disposing the magnetic tunnel junction 30 on the auxiliary layer 20, a physical height difference exists between the magnetic tunnel junction 30 and the auxiliary layer 20 to reduce a metal redeposition phenomenon on a sidewall of the magnetic tunnel junction 30 and prevent a short circuit of the magnetic memory device. And due to the height difference between the magnetic tunnel junction 30 and the auxiliary layer 20, the influence of etching on different material layers in the magnetic tunnel junction 30 in the process of forming the magnetic tunnel junction 30 by adopting an etching mode can be reduced, and the yield and the performance of the magnetic tunnel junction 30 are improved.
When the material of the auxiliary layer 20 is specifically determined, the material of the auxiliary layer 20 may be one or a combination of several of TaN, tiN, ta, ti, W, and WN. The short circuit phenomenon of the magnetic memory device is improved by using a light metal which is not easy to cause redeposition or using a metal material which is easier to clean and remove. For the specific setting mode, reference is made to the discussion in the preparation method, and details are not repeated here.
In the specific determination of the thickness of the auxiliary layer 20, the thickness of the auxiliary layer 20 may be 5 to 200nm, and specifically, the thickness of the auxiliary layer 20 may be any value between 5 to 200nm, such as 5nm, 15nm, 30nm, 50nm, 70nm, 90nm, 100nm, 120nm, 140nm, 160nm, 180nm, 200nm, and the like.
The size of the auxiliary layer 20 may be set larger than the size of the magnetic tunnel junction 30. When the magnetic tunnel junction is formed, the horizontal cross-sectional shapes of the auxiliary layer 20 and the magnetic tunnel junction 30 may be both square, and the side length of the horizontal cross-section of the auxiliary layer 20 may be 10nm to 200nm larger than the side length of the horizontal cross-section of the magnetic tunnel junction 30. Specifically, the side length of the horizontal cross section of the auxiliary layer 20 may be larger than the side length of the horizontal cross section of the magnetic tunnel junction 30 by any value between 10nm and 200nm, such as 10nm, 20nm, 30nm, 50nm, 70nm, 90nm, 100nm, 120nm, 140nm, 160nm, 180nm, or 200nm. The horizontal cross section of the auxiliary layer 20 and the magnetic tunnel junction 30 refers to a cross section of the auxiliary layer 20 and the magnetic tunnel junction 30 parallel to the substrate surface. It should be understood that the cross-sectional shapes of the auxiliary layer 20 and the magnetic tunnel junction 30 in the horizontal direction are not limited to the square shape shown above, and other shapes may be adopted. I.e., as long as the arrangement that the size of the magnetic tunnel junction 30 is smaller than the size of the auxiliary layer 20 is satisfied, is within the scope of the embodiments of the present invention.
The magnetic tunnel junction 30 may be a planar magnetic tunnel junction 30 or a perpendicular magnetic tunnel junction 30.
The above description is only for the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims.
Claims (12)
1. A method of fabricating a magnetic memory device, comprising:
providing a substrate, wherein the substrate is provided with a bottom electrode;
providing an auxiliary layer on the bottom electrode;
disposing a magnetic tunnel junction on the auxiliary layer, comprising:
depositing a plurality of magnetic material layers forming the magnetic tunnel junction on the auxiliary layer and the bottom electrode, wherein one part of the plurality of magnetic material layers covers the auxiliary layer, one part of the plurality of magnetic material layers covers the side wall of the auxiliary layer, and the other part of the plurality of magnetic material layers covers the bottom electrode;
and etching off the part of the multilayer magnetic material layer covering the side wall of the auxiliary layer and the bottom electrode to form the magnetic tunnel junction.
2. The method according to claim 1, wherein the step of providing the auxiliary layer on the bottom electrode comprises:
depositing an auxiliary material layer on the bottom electrode;
and etching the auxiliary material layer.
3. The method of claim 2, further comprising performing CMP on the auxiliary material layer before etching the auxiliary layer thereon.
4. The method according to claim 2, wherein the etching of the auxiliary material layer is specifically:
depositing a mask layer on the auxiliary material layer;
etching the pattern of the auxiliary layer on the mask layer;
etching the auxiliary material layer by adopting an etching mode to obtain the auxiliary layer;
and removing the mask layer.
5. The method of claim 4, wherein the mask layer is one of a hard mask layer, an oxide mask layer, or a composite layer of two layers.
6. The method according to claim 4, wherein the etching of the auxiliary material layer by means of etching is performed to obtain the auxiliary layer by:
and etching the auxiliary material layer by adopting one or two etching methods of RIE etching and IBE etching to obtain the auxiliary layer.
7. A magnetic memory device, comprising:
a substrate having a bottom electrode thereon;
an auxiliary layer deposited on the bottom electrode;
a magnetic tunnel junction deposited on the auxiliary layer, wherein the magnetic tunnel junction is formed by:
depositing a plurality of magnetic material layers forming the magnetic tunnel junction on the auxiliary layer and the bottom electrode, wherein one part of the plurality of magnetic material layers covers the auxiliary layer, one part of the plurality of magnetic material layers covers the side wall of the auxiliary layer, and the other part of the plurality of magnetic material layers covers the bottom electrode;
and etching off the part of the multilayer magnetic material layer covering the side wall of the auxiliary layer and the bottom electrode to form the magnetic tunnel junction.
8. The magnetic memory device of claim 7, wherein the auxiliary layer is one or a combination of TaN, tiN, ta, ti, W, WN.
9. The magnetic memory device of claim 7, wherein the auxiliary layer has a thickness of 5 to 200nm.
10. The magnetic memory device of claim 7, wherein a size of the assist layer is larger than a size of the magnetic tunnel junction.
11. The magnetic memory device according to claim 10, wherein the auxiliary layer and the magnetic tunnel junction are each square in cross-sectional shape in the horizontal direction; and the side length of the cross section of the auxiliary layer in the horizontal direction is 10 nm-200 nm larger than that of the cross section of the magnetic tunnel junction in the horizontal direction.
12. The magnetic memory device of claim 7, wherein the magnetic tunnel junction is a planar magnetic tunnel junction or a perpendicular magnetic tunnel junction.
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| CN202010545330.4A CN111668364B (en) | 2020-06-15 | 2020-06-15 | Preparation method of magnetic memory device and magnetic memory device |
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| CN107785481B (en) * | 2016-08-25 | 2021-10-29 | 中电海康集团有限公司 | Three-terminal magnetic random access memory and read-write method thereof |
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