CN102479885A - Method for manufacturing semiconductor element - Google Patents
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- CN102479885A CN102479885A CN2010105530538A CN201010553053A CN102479885A CN 102479885 A CN102479885 A CN 102479885A CN 2010105530538 A CN2010105530538 A CN 2010105530538A CN 201010553053 A CN201010553053 A CN 201010553053A CN 102479885 A CN102479885 A CN 102479885A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 58
- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000013078 crystal Substances 0.000 claims abstract description 41
- 238000012545 processing Methods 0.000 claims abstract description 27
- 238000002955 isolation Methods 0.000 claims abstract description 23
- 238000005520 cutting process Methods 0.000 claims abstract description 21
- 238000000576 coating method Methods 0.000 claims abstract description 7
- 239000011248 coating agent Substances 0.000 claims abstract description 5
- 239000002313 adhesive film Substances 0.000 claims abstract 3
- 238000000465 moulding Methods 0.000 claims description 19
- 238000013459 approach Methods 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 15
- 208000007578 phototoxic dermatitis Diseases 0.000 claims description 12
- 210000001503 joint Anatomy 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 11
- 239000007788 liquid Substances 0.000 claims description 10
- 239000012528 membrane Substances 0.000 claims description 9
- 229910052594 sapphire Inorganic materials 0.000 claims description 8
- 239000010980 sapphire Substances 0.000 claims description 8
- 239000010453 quartz Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 3
- 230000000295 complement effect Effects 0.000 claims description 3
- 239000000975 dye Substances 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- -1 organosilane ester Chemical class 0.000 claims description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 3
- 238000012216 screening Methods 0.000 claims description 3
- 229920003169 water-soluble polymer Polymers 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 claims 1
- 238000005259 measurement Methods 0.000 claims 1
- 238000011056 performance test Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 abstract description 86
- 238000005530 etching Methods 0.000 abstract description 6
- 238000012360 testing method Methods 0.000 abstract description 6
- 238000005336 cracking Methods 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 239000004575 stone Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 7
- 239000000758 substrate Substances 0.000 description 5
- 230000006378 damage Effects 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 239000012780 transparent material Substances 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- 230000002950 deficient Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000011112 process operation Methods 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229920000297 Rayon Polymers 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000023077 detection of light stimulus Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000002195 soluble material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention discloses a method for manufacturing semiconductor elements, which comprises the steps of: forming one or more isolation channels with proper depths on a first surface by etching stacked wafers formed by the semiconductor elements; testing the optical and electric properties of each of the isolation channels, and reversely attaching an adhesive film arranged on a working platform to the first surface of the available wafer, while coating a water-soluble medium with a light receiving property to an upward second surface at the other side of the wafer; upwardly detecting each of the isolation channels preset by the wafers by a detector at the bottom of the working platform; cutting each of the isolation channels by a medium in combination with a low-power laser light source (Pico second laser); removing the medium on the second surface; and performing wafer cracking through the isolation channels; and turning formed crystal grains and allowing the first surface to face upwardly, and detecting the appearances of the crystal grains for subsequent processing.
Description
Technical field
The present invention relates to a kind of manufacturing approach of semiconductor element; Especially refer to the medium through the wafer surface coating, the manufacturing approach that cooperates low level laser light source (Pico second laser) to cut; Through one or above together isolation road on the wafer of semiconductor element; Cut apart a plurality of crystal grain of moulding, do not destroy the wafer tissue, can promote the product yield because of division processing.
Background technology
Generally with the semi-conductive luminescent wafer of gallium nitride (GaN) matrix; Usually all be utilize sapphire (Sapphire) or similarly transparent material as base material, and on base material the stacked light emitting layer, to be shaped to nitride semiconductor layer; The Jingjing circle of heap of stone that forms through a plurality of each semiconductor layer again; Process the nitride semiconductor LED wafer, promptly utilize a plurality of Jingjing circles of heap of stone that are stacked in nitride semiconductor layer on this sapphire substrate, be divided into a plurality of wafers; But round to the Jingjing of heap of stone that comprises sapphire substrate; When being divided into a plurality of LED wafer,, then cause difficulty in the process operations of cutting apart or cutting into slices because the hardness of sapphire substrate is high with good yield.
And light-emitting diode (LED; Light Emitting Diode) processing procedure earlier by the substrate of single-chip as growth usefulness, utilizes the moulding of various building crystal to grow method to build wafer again; To build wafer again and make electrode; And after carrying out the platform etching, cut into wafer again, can will build wafer at last and break down into a plurality of single crystal grain; And the cutting of crystal grain is the very important processing procedure of light-emitting diode wafer; Because crystal grain is after going through complicated processing procedure; And break down into stage of a plurality of single crystal grain will building wafer; If can't keep high yield or, also or because the speed of cutting causes the cost of procedure for processing too high excessively slowly, for the production of crystal grain, make promptly can form quite and seriously influence because of the original characteristic of die separation method affect; The dealer is then arranged in order to solve wafer of heap of stone in procedure for processing; The difficulty of cutting apart operation can utilize the laser cutting to build cutting apart of wafer, to promote fine ratio of product; But when using laser processing to cut apart operation; The transparency carrier of Chang Yinlei wafer is not enough to the laser light absorptivity, and the pyrocaloric effect that uses the high power laser light source to produce promptly can form the destruction of being heated so that producing burned black phenomenon to wafer perimeter element of heap of stone; Also cause cutting back crystal grain luminosity and significantly decay or cut condition of poor, make the product fraction defective raising of LED wafer.
Therefore; How to solve at present in the cutting apart in the operation processing procedure of LED wafer, because of the base material of wafer of heap of stone to the absorptivity deficiency, be difficult for cutting apart the problem that operation is carried out; And cutting apart operation processes through high-power laser light source; Cause the shortcoming of crystal grain brightness decay, the raising of product fraction defective etc., must improve, the relevant manufacturer that is the inventor and is engaged in the industry desires most ardently the direction place that research improves.
Summary of the invention
The inventor is because above-mentioned problem and shortcoming; Be to collect related data; Via assessing in many ways and consider, and to engage in the many years of experience of the industry accumulation, via constantly studying and revising; Beginning is designed this kind through low level laser light source conjunction with semiconductors wafer surface coating water-soluble medium, and the patent of invention that can cut apart the manufacturing approach of the semiconductor element that crystal grain do not damage smoothly is born.
Main purpose of the present invention is the stacked wafer (Jingjing sheet of heap of stone) that is this semiconductor element institute moulding, in the isolation road of first surface through one or one above appropriate depth of etching and processing moulding, and carries out the test of light, electrical property; And detect the available wafer in back (Jingjing sheet of heap of stone); Oppositely attach and be positioned at glued membrane, the opposite side second surface up on the workbench, be coated with the water-soluble medium that receives photosensitiveness, detect upwards with detector by the workbench bottom then that wafer is default respectively isolates with first surface; And cooperation low level laser light source (Pico second laser); After isolating road and carry out cutting processing to each via medium, wafer is removed in the medium of second surface, carried out wafer and burst apart, separate through isolating the road; A plurality of crystal grain finished products of moulding; Turn to first surface and place up, the outward appearance of carrying out the crystal grain finished product detects, screening, and carries out the following process processing procedure.
Secondary objective of the present invention is the wafer that is this semiconductor element; Comprise transparent material base material, take shape in the semiconductor first type layer, composition surface and the second type layer that are stacked on the base material, take shape in the butt joint layer on the semiconductor second type layer; Pass through etching and processing by first surface again; One or above together isolation road of forming device appropriate depth, and the degree of depth of respectively isolating is for going deep into the appropriate depth to the about 2 μ m of the semiconductor second type layer～10 μ m.
A purpose more of the present invention is the wafer that is this semiconductor element; Through after oppositely being placed on the workbench, and, be coated with the water-soluble medium that receives photosensitiveness in second surface up; Then water-soluble medium can be organic protection liquid of water soluble polymer or water-soluble organosilane ester protection liquid etc.; And protection liquid comprises compositions such as polyvinyl alcohol, dyestuff, and after wafer process is shaped to plural crystal grain, can the medium on the crystal grain second surface be removed through washing operation.
Description of drawings
Fig. 1 is a wafer side view of the present invention;
Fig. 2 is the operations end view of wafer of the present invention;
Fig. 3 is the end view of crystal grain of the present invention;
Fig. 4 is a flow chart of the present invention.
Description of reference numerals: 1-wafer; The 101-base material; 105-docks layer; The 102-first type layer; The 11-first surface; The 103-composition surface; 12-isolates the road; The 104-second type layer; The 13-second surface; The 2-workbench; The 21-glued membrane; The 23-laser light source; The 22-detector; The 3-medium; 4-crystal grain.
Embodiment
For reaching above-mentioned purpose and effect, technological means that the present invention adopted and execution mode thereof, accompanying drawing explains in detail that with regard to preferred embodiment of the present invention its characteristic and function are following, are beneficial to understand fully now.
See also Fig. 1-shown in Figure 4, be operations end view, the end view of crystal grain, the flow chart of wafer side view of the present invention, wafer, find out by knowing shown in the figure, semiconductor device manufacturing method of the present invention, its step:
(100) with the wafer 1 of semiconductor element, carry out the etch preset proper depth, to be shaped to together or above together isolation road 12 by first surface 11.
(101) to one or above together isolation road 12 on the wafer 1, carry out the test of light, electrical property, detect complete, good wafer 1.
(102) will detect the available wafer 1 in back again and turn to, and be positioned at the glued membrane 21 on the workbench 2 with first surface 11 reverse attachings.
(103) wafer 1 reverse back opposite side second surface 13 up is coated with the water-soluble medium 3 that receives photosensitiveness.
(104) pass through detector 22 by workbench 2 bottoms; Detect one of 11 the preset moulding of first surface or the above together isolation road 12 of wafer 1; Cooperate low level laser light source 23 (Pico second laser) again; To one or above together isolation road 12, carry out the cutting processing of wafer 1 via medium 3.
(105) medium 3 that the second surface 13 of wafer after the cutting processing 1 is coated with utilizes clear water to remove, and to together or the above together road 12 that isolates, carry out wafer 1 burst apart (Break), separate and a plurality of crystal grain 4 finished products of moulding.
(106) a plurality of crystal grain 4 finished products after the moulding are turned to again, and reply and place up, supply to detect the outward appearance of each crystal grain 4 finished product, carry out the screening of complete, good crystal grain 4 with first surface 11.
(107) a plurality of crystal grain 4 finished products carry out procedure for processing such as follow-up routing, encapsulation, packing.
Above-mentioned this case manufacturing approach; The wafer 1 of this semiconductor element; Can be the photoelectric cell of light-emitting diode (LED), comprise base material 101, take shape in base material 101 laminated formulas the semiconductor first type layer 102, composition surface 103 and the second type layer 104, take shape in the butt joint layer 105 on the semiconductor second type layer 104, and the upper surface of butt joint layer 105 is the first surface 11 with wafer 1; First surface 11 with respect to butt joint layer 105; Opposite side substrate 101 surfaces have the second surface 13 of wafer 1, and by the first surface 11 of wafer 1 towards the semiconductor second type layer 104, composition surface 103, the first type layer 102, carry out the etch preset proper depth; And etching and processing can be through dry ecthing, wet etching or dried wet etching etc., and various etching and processing modes are carried out; Then on wafer 1, form the separation of suitable distance; With moulding together or above together isolation road 12, as for together or the above together degree of depth of isolating road 12, must pass the second type layer 104, composition surface 103 after; Go deep into the degree of depth of the semiconductor first type layer 102 about 2 μ m～10 μ m again; In the time of can supplying the wafer 1 of semiconductor element to carry out the detection of light, electrical property, with the semiconductor of brilliant moulding of heap of stone on probe test (Probe testing) the wafer 1 first type layer 102, the second type layer 104, butt joint layer 105 etc., the light of each semiconductor layer, electrical property; Except directly the second type layer 104 and butt joint layer 105 being detected; More can go deep into respectively isolating the light, the electrical property that detect the first type layer 102 in 12, testing wafer 1 (LED wafer 1, character such as brightness LED) and wavelength.
And the base material 101 of this wafer 1 is the transparent base 101 of light-permeable; Can be sapphire (Sapphire), glass, quartz, synthetic quartz or carborundum (SiC) etc.; Various transparent base 101, and promptly supply the semi-conductive first type layer 102 of brilliant moulding of heap of stone (to can be N type layer, also can be P type layer at second surface 13, the opposite side that base material 101 1 sides form wafer 1; And be type layer material of different nature with the second type layer 104), (P-N connects face on composition surface 103; P-N Junction), the second type layer 104 (can be P type layer, also can be N type layer, must be type layer material of different nature) with the first type layer 102; And take shape in the butt joint layer 105 (weld pad on the semi-conductive second type layer 104 surface; Pad), then in order to electrically connecting the interface of external circuits, as carry out routing type structure dress (Wire-bonding), the crystal covering type structure dress procedure for processing such as (Flie-chip) of following process operation.
Wafer 1 as for this semiconductor element; After through upset; Oppositely paste and desire to be positioned at the glued membrane 21 on the workbench 2 with first surface 11; And workbench 2 can be transparent sucker, transparent vacuum attraction seat etc., and the glued membrane 21 on the workbench 2 promptly can be the transparent material of tool adhesive property (viscose glue, resin or double faced adhesive tape etc.); In addition; Respectively isolate 12 detector 22 on the wafer 1 in order to detect, can be charge coupled cell (CCD, Charge-coupled Device) or complementary metal oxide semiconductor element (CMOS; Complementary Metal Oxide Semiconductor); As for to wafer 1 respectively isolate 12 laser light source 23 cut apart, then can be lower powered little laser laser (Pico second laser), this miniature laser Wavelength of Laser is between 200Nm～800Nm; And the wavelength of preferred embodiment can be 355Nm, also can be the miniature laser laser of 266Nm or 532Nm wavelength.
Moreover, when the wafer 1 of semiconductor element after upset, oppositely be attached on the glued membrane 21 that is positioned at workbench 2 with first surface 11; Can be on the second surface 13 of wafer 1 opposite side, coating has the photosensitiveness of receiving and opaque water-soluble medium 3, then has the water-soluble material that the water-soluble medium 3 that receives photosensitiveness can be organic protection liquid of water soluble polymer or water-soluble organosilane ester protection liquid etc.; And protection liquid comprises that polyvinyl alcohol, dyestuff etc. become branch to constitute, and has high absorptance and reach 90%, promotes the absorptance that absorbs the miniature laser laser of being launched by thunder light source 23 of low-power; Through behind the medium 3, that more concentrates is radiated on the transparent base material 101 for laser light source 23, respectively isolates 12 to being positioned on the wafer 1 accurately again; Conveniently carry out the processing that laser is cut apart; Because of laser light source 23 is lower powered miniature laser laser, only have extremely low temperature, can not produce pyrocaloric effect; Then can or not cause burned black phenomenon to generations destruction such as the peripheral element of wafer 1 such as the semiconductor first type layer 102, the second type layer 104 or butt joint layer 105; After division processing is accomplished, and wafer 1 burst apart (Break), separates, can be after wafer 1 be cut apart moulding complex crystal grain 4; Keep original luminosity, the difficult phenomenon that brightness decay takes place; Can promote the product yield of crystal grain, more convenient crystal grain after will cutting apart, detecting, screen carries out follow-up routing type structure dress (Wire-bonding), procedure for processing such as crystal covering type structure dress (Flie-chip), encapsulation or packing.
Therefore, the above is merely preferred embodiment of the present invention, and is non-so limit to claim of the present invention; The manufacturing approach of semiconductor element of the present invention is utilized the transparent base 101 of the wafer 1 of semiconductor element, is positioned at the glued membrane 21 on the workbench 2 with reverse attaching the in first surface 11 upset backs; Receive the water-soluble medium 3 of photosensitiveness again in opposite side second surface 13 coatings up, and through low level laser light source 23 (Pico second laser), via the high absorptance (reaching 90%) of medium 3; Make laser light source 23 on the wafer 1 of semiconductor element together or above together isolation road 12, carry out division processing, can reach wafer 1 is divided into a plurality of crystal grain 4; And do not destroy the purpose of the semiconductor element of wafer 1 periphery, avoiding wafer 1 periphery to receive pyrocaloric effect influence, and the luminosity of back each crystal grain 4, induced attenuation are not cut apart in maintenance; And the water-soluble medium 3 that wafer 1 is coated with in second surface 13; After wafer 1 is cut apart completion, can remove medium 3 through the washing operation utmost point, do not influence the printing opacity brightness of cutting apart each crystal grain 4 of back; Contained by the present invention so can reach step, detection mode, method or the device etc. of aforementioned effect such as; Simple and easy modification of this kind and equivalent structure change, and all should in like manner be contained in the claim of the present invention, close and give Chen Ming.
The manufacturing approach of the plate conductor element of the invention described above is implemented in reality, when using, is had following advantage, as:
(1) wafer 1 that passes through semiconductor element is after oppositely; Receive the water-soluble medium 3 of photosensitiveness at second surface 13 applying implenents, and cooperate low level laser light source 23 (Pico Second laser), laser light source 23 is concentrated through the high absorptance of medium 3; To one or above together isolation road 12 on the wafer 1; Cut apart operation, and low level laser light source 23, can not cause wafer 1 peripheral semiconductor element to be destroyed; After cutting apart a plurality of crystal grain 4 of moulding for wafer 1, can promote the product yield of a plurality of crystal grain 4.
(2) wafer 1 of semiconductor element receives the water-soluble medium 3 of photosensitiveness in 13 coatings of second surface, after the cutting apart operation and accomplish of wafer 1, can medium 3 be removed through washing operation, and the printing opacity brightness of a plurality of crystal grain 4 in back is cut apart in unlikely influence.
Therefore, the present invention is the design of cutting apart the operation processing procedure that is primarily aimed at semiconductor element, and is reverse through the wafer of semiconductor element; Attach the glued membrane that is positioned at workbench with first surface; And receive the water-soluble medium of photosensitiveness, high absorptance in wafer opposite side second surface applying implenent up, and cooperate lower powered laser light source, on the wafer together or above together isolation road cut apart operation; And the semiconductor element of avoiding laser light source to destroy wafer perimeter is main key protection point; And the product that wafer is divided into behind a plurality of crystal grain has good printing opacity brightness, be only to make the processing procedure of the wafer of semiconductor element have the function that improves the high yield of product, but the above is merely preferred embodiment of the present invention; Non-so promptly limit to claim of the present invention; So simple and easy modification, replacement and the principle of equal effects of using specification of the present invention and accompanying drawing content to do such as change, and all should in like manner be contained in the claim of the present invention, close and give Chen Ming.
In sum, the manufacturing approach of the above-mentioned semiconductor element of the present invention is when practical application, operation, enforcement, for reaching its effect and purpose really; So the present invention really is the excellent research and development of a practicality, for meeting the application important document of patent of invention, file an application in the whence in accordance with the law; Expect that examining committee grants accurate the present invention early, ensureing inventor's arduous research and development, if an ancient unit of weight office examine committee have any check doubtful; The indication of please writing to us without sparing, settled the doing one's utmost of inventor cooperates, and the true feeling moral is just.
Claims (9)
1. the manufacturing approach of a semiconductor element is characterized in that, its step is following:
(a) wafer with semiconductor element carries out the etch preset degree of depth by first surface, with the above together isolation road of moulding;
(b) carry out light, electric performance test to isolation road above together on the wafer;
The wafer that (c) can use after will detecting again is positioned at the glued membrane on the workbench with reverse attaching of first surface;
(d) opposite side up the second surface of wafer after reverse promptly is coated with the medium that receives photosensitiveness;
(e) pass through detector by the workbench bottom, detect the isolation road of the preset moulding of first surface more than one of wafer, and cooperate the low level laser light source, carry out cutting processing to the isolation road together via medium;
(f) medium of the second surface of wafer coating is removed, and to together or the above together road that isolates carry out wafer and burst apart and separate, and a plurality of crystal grain finished products of moulding;
(g) a plurality of crystal grain finished products after the moulding are turned to again, place up, and detect the outward appearance of each crystal grain finished product, carry out the screening of crystal grain finished product with first surface;
(h) a plurality of crystal grain finished products carry out the following process processing procedure.
2. the manufacturing approach of semiconductor element according to claim 1; It is characterized in that; This semiconductor element is the stacked wafer of moulding, and the wafer of semiconductor element comprises transparent base material, the semi-conductive first type layer, composition surface, the semi-conductive second type layer and butt joint layer.
3. the manufacturing approach of semiconductor element according to claim 2 is characterized in that, this transparent base material is sapphire, glass, quartz or synthetic quartz.
4. the manufacturing approach of semiconductor element according to claim 1 is characterized in that, the wafer first surface of this step (c) oppositely is attached at transparent adhesive film, again wafer and transparent adhesive film is placed in the transparent sucker with absorption positioning action.
5. the manufacturing approach of semiconductor element according to claim 1; It is characterized in that; The photosensitiveness medium that receives of this step (d) is the medium of organic protection liquid of water soluble polymer or water-soluble organosilane ester protection liquid; Protection liquid comprises the composition of polyvinyl alcohol and dyestuff, and protection liquid is to have the opaque medium that receives photosensitiveness.
6. the manufacturing approach of semiconductor element according to claim 1 is characterized in that, the first surface of the wafer of this step (e) is for presetting the isolation road that moulding dents into the wafer internal layer, to carry out the brightness and the wavelength measurement of wafer to this isolation road.
7. the manufacturing approach of semiconductor element according to claim 1 is characterized in that, the detector of this step (e) is charge coupled cell or complementary metal oxide semiconductor element.
8. the manufacturing approach of semiconductor element according to claim 1 is characterized in that, the low level laser light source of this step (e) is miniature laser laser, and the laser light wavelength is between 200Nm～800Nm.
9. a semiconductor element comprises transparent base, semi-conducting electrode layer, butt joint layer, it is characterized in that:
The two relative side of this transparent base has first top layer and second top layer respectively;
This semi-conducting electrode layer is first top layer that takes shape in transparent base; This semi-conducting electrode layer is provided with the first range upon range of in regular turn type layer, composition surface and the second type layer; And this semi-conducting electrode layer becomes the isolation road of cutting apart target more than having together; And isolate the road and go deep into the second type layer again, and go deep into the degree of depth of the second type layer, 2 μ m～10 μ m by the first type layer, composition surface;
This butt joint layer is for taking shape in the opposite side surface of semi-conducting electrode layer with respect to transparent base.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010553053 CN102479885B (en) | 2010-11-22 | 2010-11-22 | Method for manufacturing semiconductor element |
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|---|---|---|---|
| CN 201010553053 CN102479885B (en) | 2010-11-22 | 2010-11-22 | Method for manufacturing semiconductor element |
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| CN102479885A true CN102479885A (en) | 2012-05-30 |
| CN102479885B CN102479885B (en) | 2013-08-07 |
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| CN 201010553053 Expired - Fee Related CN102479885B (en) | 2010-11-22 | 2010-11-22 | Method for manufacturing semiconductor element |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105304540A (en) * | 2015-09-22 | 2016-02-03 | 常州星海电子有限公司 | Glass passivation chip reverse cutting method without positioning lines |
| CN105789390A (en) * | 2016-05-05 | 2016-07-20 | 扬州乾照光电有限公司 | Production technology of quaternary system LED chip |
| TWI719214B (en) * | 2016-07-11 | 2021-02-21 | 日商迪思科股份有限公司 | Manufacturing method of light-emitting diode chip |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6498387B1 (en) * | 2000-02-15 | 2002-12-24 | Wen-Ken Yang | Wafer level package and the process of the same |
| CN1481290A (en) * | 2000-12-15 | 2004-03-10 | Laser machining of semiconductor materials | |
| US20050287709A1 (en) * | 2004-06-23 | 2005-12-29 | Advanced Semiconductor Engineering Inc. | Process for manufacturing leadless semiconductor packages including an electrical test in a matrix of a leadless leadframe |
| CN101452975A (en) * | 2007-12-04 | 2009-06-10 | 杨秋忠 | Wafer stage encapsulation LED chip and manufacturing method thereof |
-
2010
- 2010-11-22 CN CN 201010553053 patent/CN102479885B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6498387B1 (en) * | 2000-02-15 | 2002-12-24 | Wen-Ken Yang | Wafer level package and the process of the same |
| CN1481290A (en) * | 2000-12-15 | 2004-03-10 | Laser machining of semiconductor materials | |
| US20050287709A1 (en) * | 2004-06-23 | 2005-12-29 | Advanced Semiconductor Engineering Inc. | Process for manufacturing leadless semiconductor packages including an electrical test in a matrix of a leadless leadframe |
| CN101452975A (en) * | 2007-12-04 | 2009-06-10 | 杨秋忠 | Wafer stage encapsulation LED chip and manufacturing method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105304540A (en) * | 2015-09-22 | 2016-02-03 | 常州星海电子有限公司 | Glass passivation chip reverse cutting method without positioning lines |
| CN105789390A (en) * | 2016-05-05 | 2016-07-20 | 扬州乾照光电有限公司 | Production technology of quaternary system LED chip |
| CN105789390B (en) * | 2016-05-05 | 2018-08-07 | 扬州乾照光电有限公司 | A kind of production technology of quaternary system LED chip |
| TWI719214B (en) * | 2016-07-11 | 2021-02-21 | 日商迪思科股份有限公司 | Manufacturing method of light-emitting diode chip |
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| Publication number | Publication date |
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| CN102479885B (en) | 2013-08-07 |
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