CN102479865A - Film solar battery composition structure - Google Patents
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- CN102479865A CN102479865A CN2010105601571A CN201010560157A CN102479865A CN 102479865 A CN102479865 A CN 102479865A CN 2010105601571 A CN2010105601571 A CN 2010105601571A CN 201010560157 A CN201010560157 A CN 201010560157A CN 102479865 A CN102479865 A CN 102479865A
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- Y02E10/548—Amorphous silicon PV cells
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Abstract
The invention relates to a film solar battery composition structure, which at least comprises a first semi-transparent conduction metal layer, an n-i-p semiconductor layer and a transparent base plate, wherein one side of the first semi-transparent conduction metal layer is a light irradiation surface and is used for taking out electric energy and improving the photoelectric conversion efficiency, the n-i-p semiconductor layer is formed under the first semi-transparent conduction metal layer and is used for generating electron hole pairs for providing light current and increasing the light absorption rate, the transparent base plate is formed under the n-i-p semiconductor layer, the first semi-transparent conduction metal layer is transition metal or aluminum, the resistance value is reduced, and the available power is improved, so the conversion efficiency is improved.
Description
Technical field
The invention relates to a kind of thin-film solar cells composition structure, refer to a kind of thin-film solar cells composition structure especially with high conductivity.
Background technology
Grow up because of the global solar market demand, when the river rises the boat goes up to cause silicon starving, silicon wafer solar cell and module production cost.And advantages such as thin-film solar cells is frivolous because of having, low-cost, deflection, various appearances design become after the silicon wafer solar cell, are considered to the most potential current heliotechnics.
The technology of solar power generation mainly is divided into silicon metal (Wafer base) and film (Thin Film base) solar cell two big classes according to the manufacturing process differentiation.Wherein because of silicon has advantages such as avirulence, oxide are stable, add that the existing mature and stable industrial treatment technology of industrial circle handles silicon materials, therefore, the silicon wafer solar cell is the existing market application mainstream, accounts for the world market and reaches ninety percent approximately.
Yet, since in recent years states such as Germany, Spain under the solar boosted policy implication, powerful the raising of the solar cell module market demand, 2007, the demand of solar cell module heated, once cause the silicon raw material seriously the short supply, price skyrockets.Though since 2008 second half year, left successively because of polysilicon manufacturer production capacity, add that the market demand eases up, impel the silicon cost of material to downgrade gradually, the unsettled experience of silicon cost of material has let solar energy manufacturer realize the importance of scattered risks more; Moreover the silicon wafer solar energy industry is because of equipment and manufacturing process technology is ripe, entry threshold is low, and in numerous competitors' industry, the high gross profit epoch in the past have been difficult to see again, impel solar energy manufacturer to quicken to research and develop feeler turning film area of solar cell.
Thin-film solar cells as its name suggests, is on plastic cement, glass or metal substrate, to form to produce photoelectric film, and thickness only needs number μ m, therefore under same light-receiving area, can significantly reduce the consumption of raw material than the Silicon Wafer solar cell.Thin-film solar cells is not to be the product of new ideas; In fact; Artificial satellite generally adopted the high conversion efficiency thin-film solar cell panel made from GaAs (GaAs) (as substrate, conversion usefulness can reach more than 30% with monocrystalline silicon) to generate electricity already in the past, but its cost is expensive; Be used to the too industry of navigating more, can't popularize now.So present industry main flow adopts amorphous silicon (a-Si) to make the light absorbing zone of thin-film solar cells (being semiconductor layer) more.Thin-film solar cells can be made on cheap glass, plastic cement or stainless steel substrate in a large number; To produce large-area solar cell; And its manufacturing process more can directly import quite ripe TFT-LCD manufacturing process; This is one of its advantage, so industry falls over each other to drop into the research in this field invariably.
Basically, the solar cell manufacturing process of the relative other types of thin-film solar cells is comparatively simple, has that cost is low, the mass producible advantage.With regard to the composition of thin-film solar cell substrate; Its basic manufacturing process can be through three layers of deposition (deposition), three road laser scribing (scribe) formalities; As described below: at first, earlier with physical gas-phase deposition (PVD) on the glass substrate of subscribing size, plate the layer of transparent conductive film (Transparent Conductive Oxide, TCO); It selects light transmission height and the good material of conductivity, like tin indium oxide (ITO), tin oxide (SnO2) or zinc oxide (ZnO) etc.Then with its preceding electrode pattern (patterning) of infrared laser line definition.So far be first road deposition and line formality.Second stage is the making of main absorbed layer (Active layer); As the one of which with plasma-assisted chemical vapour deposition (PlasmaEnhanced Chemical Vapor Deposition; PECVD) technology grows the hydrogenated amorphous silicon structure (p-a-Si:H/i-a-Si:H/n-a-Si:H) of one deck p-i-n type arrangement on electrode surface, and this main absorbed layer is with the agent structure of p-n semiconductor junction (p-n junction) as light absorption and power conversion.Can carry out the laser scribing step equally after this step, be the main absorbed layer define pattern of producing, so far be second road deposition and line formality.Form the back electrode that aluminium/silver-colored material is the master (back contact) above that with sputter (sputter) technology more at last, and carry out the 3rd road laser scribing and define its back electrode figure.
So because of using transparency conducting layer in the transparency of visible region, the semiconductor of the transparency conducting layer of being selected for use must be the semiconductor of wide energy gap, so select for use the energy gap width must be greater than the semiconductor of the transparency conducting layer of visible light energy scope; So increased the integral thickness of thin-film solar cells; And, generally, promote its conductivity by the mode of doping trace impurity for increasing the conduction property of transparency conducting layer; So technology comparatively bothers; Therefore, how to reduce the thin film solar integral thickness and how to improve light transmittance and the efficient of absorptivity and opto-electronic conversion, industry is needed the problem of solution badly for this reason.
Summary of the invention
The object of the present invention is to provide a kind of thin-film solar cells to form structure, technical problem to be solved is to make it utilize translucent conductive metal layer to reduce resistance value effectively, to increase conductance, power capable of using is risen, thereby improves the efficient of conversion.
Another object of the present invention is to provide a kind of thin-film solar cells to form structure; Technical problem to be solved is to make it replace the nesa coating of existing convention by translucent conductive metal layer; Increase photosphere and penetration length effectively; And the increase reflective character, to increase whole conversion efficiency.
To achieve these goals; A kind of thin-film solar cells according to the present invention proposes is formed structure; At least comprise: one first translucent conductive metal layer, the one side of this first translucent conductive metal layer are a shadow surface, and in order to take out electric energy and the efficient that promotes opto-electronic conversion; One n-i-p semiconductor layer, it is to be formed at this first translucent conductive metal layer below, in order to produce electron hole pair (or being called electron hole pair), photoelectric current to be provided and to increase absorptivity; And a transparency carrier, it is formed at this n-i-p semiconductor layer below.
The present invention also can adopt following technical measures further to realize.
Aforesaid thin-film solar cells is formed structure, and it further comprises one second translucent conductive metal layer, is formed between aforementioned transparency carrier and the n-i-p semiconductor layer.
Aforesaid thin-film solar cells is formed structure, and the material of wherein said transparency carrier is glass, quartz, perspex, sapphire substrate or transparent flexual material.
Aforesaid thin-film solar cells is formed structure, and the wherein said first translucent conductive metal layer and the second translucent conductive metal layer are single transition metal or aluminium; Or aforementioned first translucent conductive metal layer and the second translucent conductive metal layer comprise one first transparent conductive oxide and a transition metal or aluminium one of them; Also or the aforementioned first translucent conductive metal layer and the second translucent conductive metal layer comprise one of them and one second transparent conductive oxide of one first transparent conductive oxide, a transition metal or aluminium.
Aforesaid thin-film solar cells is formed structure, and wherein said transition metal is silver or nickel, and wherein the thickness of aforementioned silver is between 3nm～25nm.
Aforesaid thin-film solar cells is formed structure, and wherein said first transparent conductive oxide and second transparent conductive oxide are zinc oxide aluminum (AZO), zinc-gallium oxide (GZO) or zinc oxide boron (ZnO).
The present invention compared with prior art has tangible advantage and beneficial effect.By technique scheme, thin-film solar cells of the present invention is formed structure, has advantage at least: thin-film solar cells of the present invention is formed structure; Utilize translucent conductive metal layer to reduce resistance value effectively,, power capable of using is risen to increase conductance; Thereby improve the efficient of conversion, and replace the nesa coating that has convention now, increase photosphere and penetration length effectively by translucent conductive metal layer; And the increase reflective character, to increase whole conversion efficiency.
Description of drawings
Fig. 1 is that the thin-film solar cells of first embodiment of the invention is formed structure chart.
Fig. 2 is that the thin-film solar cells of second embodiment of the invention is formed structure chart.
Fig. 3 is that thin-film solar cells of the present invention is formed first translucent conductive metal layer of structure and the first enforcement structure graph of the second translucent conductive metal layer.
Fig. 4 is that thin-film solar cells of the present invention is formed first translucent conductive metal layer of structure and the second enforcement structure graph of the second translucent conductive metal layer.
Fig. 5 is that thin-film solar cells of the present invention is formed first translucent conductive metal layer of structure and the 3rd enforcement structure graph of the second translucent conductive metal layer.
100: thin-film solar cells is formed structure
10,10 ': the first translucent conductive metal layer
20,20 ': the n-i-p semiconductor layer
30,30 ': transparency carrier
40: the second translucent conductive metal layers
50,50 ', 50 ": first transparent conductive oxide
60: the second transparent conductive oxides
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention; Below in conjunction with accompanying drawing and preferred embodiment, the thin-film solar cells that proposes according to the present invention is formed its embodiment of structure, step, structure, characteristic and effect thereof specify.
Seeing also Fig. 1, is that the thin-film solar cells of first embodiment of the invention is formed structure chart.Thin-film solar cells of the present invention is formed structure 100, and comprise at least: one first translucent conductive metal layer 10, the one side of this first translucent conductive metal layer 10 are an irradiation face, and in order to take out electric energy and the efficient that promotes opto-electronic conversion; One n-i-p semiconductor layer 20 is the belows that are formed at these first translucent conductive metal layer 10 another sides, in order to produce electron hole pair, electric current to be provided and to increase absorptivity; And at least one transparency carrier 30, be that it is formed at this n-i-p semiconductor layer 20 belows.
In the present embodiment, the material of this transparency carrier 30 can use general glass, quartz, perspex, sapphire substrate or transparent flexual material or the like.
This first translucent conductive metal layer 10, can be single transition metal or aluminium one of them, this transition metal for example is silver or nickel or the like; With silver is example; The thickness of silver is between 3nm～25nm, and the characteristic of silver has good light transmittance and because of silver-colored tool reduces the characteristic of resistance value, therefore has favorable conductive character at visible-range; Preferably, the thickness of silver is between 3nm～5nm, 10nm～15nm and 20nm～25nm.Because of the very thin thickness of silver, the integral thickness of thin-film solar cells is reduced in addition.
When the irradiation face of this first translucent conductive metal layer 10 receives solar light irradiation, then light enters to this n-i-p semiconductor layer 20 by penetrating this first translucent conductive metal layer 10, and solar light irradiation is connect on the face in pn; In order to do making partly electronics because of having enough energy, leave atom and become free electron, lose the atom thereby the generation hole of electronics; And attract hole and electronics respectively through p N-type semiconductor N and n N-type semiconductor N, and separate positive electricity and negative electricity, connect the face two ends thereby produce potential difference at pn; Connect circuit (figure does not show) by this first translucent conductive metal layer 10 again, make electronics be able to through, and combine once more with the hole that connects the face other end at pn; Just produce electric current; Take out electric energy by this first translucent conductive metal layer 10 again, converting available power to, and because of the of the present invention first translucent conductive metal layer 10 be transition metal or aluminium; It has good electrical conductivity; And for making at visible-range good light transmittance is arranged, the thickness of the of the present invention first translucent conductive metal layer 10 is moderate, to avoid producing discontinuous island film.
Seeing also Fig. 2, is that the thin-film solar cells of second embodiment of the invention is formed structure chart.Thin-film solar cells of the present invention is formed structure 100, and comprise at least: one first translucent conductive metal layer 10 ', the one side of this first translucent conductive metal layer 10 ' they are an irradiation face, and in order to take out electric energy and the efficient that promotes opto-electronic conversion; One n-i-p semiconductor layer 20 ' is to be formed at this first translucent conductive metal layer, 10 ' below, in order to produce electron hole pair, electric current to be provided and to increase absorptivity; At least one second translucent conductive metal layer 40 is the belows that are formed at this n-i-p semiconductor layer 20 ', in order to take out electric energy and the efficient that promotes opto-electronic conversion; And a transparency carrier 30 ', it is formed at this second translucent conductive metal layer, 40 belows, in order to take out electric energy and the efficient that promotes opto-electronic conversion.
In the present embodiment, the material of this transparency carrier 30 ' can use general glass, quartz, perspex, sapphire substrate or transparent flexual material or the like.
This first translucent conductive metal layer 10 ' and the second translucent conductive metal layer 40, can be single transition metal or aluminium one of them, this transition metal for example is silver or nickel or the like; With silver is example; The thickness of silver is between 3nm～25nm, and the characteristic of silver has good light transmittance and because of silver-colored tool reduces the characteristic of resistance value, therefore has favorable conductive character in visible-range; Preferably, the thickness of silver is between 3nm～5nm, 10nm～15nm and 20nm～25nm.Because of the very thin thickness of silver, the integral thickness of thin-film solar cells is reduced in addition.
When the irradiation face of this first translucent conductive metal layer 10 ' receives solar light irradiation, then light enters to this n-i-p semiconductor layer 20 ' by penetrating this first translucent conductive metal layer 10 ', and solar light irradiation is connect on the face in pn; In order to do making partly electronics because of having enough energy, leave atom and become free electron, lose the atom thereby the generation hole of electronics; And attract hole and electronics respectively through p N-type semiconductor N and n N-type semiconductor N; Separate positive electricity and negative electricity, connect the face two ends thereby produce potential difference, respectively connect a circuit (figure does not show) by this first translucent conductive metal layer 10 ' and the second translucent conductive metal layer 40 again at pn; Make electronics be able to through; And combine once more with the hole that connects the face other end at pn, just produce electric current, take out electric energy by this first translucent conductive metal layer 10 ' and this second translucent conductive metal layer 40 again; To convert available power to; And because of the of the present invention first translucent conductive metal layer 10 ' and the second translucent conductive metal layer 40 are transition metal or aluminium, it has good electrical conductivity, and for making at visible-range good light transmittance is arranged; The thickness of the of the present invention first translucent conductive metal layer 10 ' and the second translucent conductive metal layer 40 is moderate, to avoid producing discontinuous island film.
Seeing also Fig. 3, is that thin-film solar cells of the present invention is formed first translucent conductive metal layer of structure and the first enforcement structure graph of the second translucent conductive metal layer.First translucent conductive metal layer 10,10 ' and the second translucent conductive metal layer 40 that thin-film solar cells of the present invention is formed structure 100 is except can be single transition metal or aluminium one of them; Also can be one of them that comprises one first transparent conductive oxide 50 and a transition metal or aluminium; At present embodiment; This first transparent conductive oxide 50 is the tops that are formed at this transition metal or aluminium; This first transparent conductive oxide can be zinc oxide aluminum (AZO), zinc-gallium oxide (GZO) or zinc oxide boron (ZnO) or the like transparent conductive oxide, and these a little transparent conductive oxides have lower resistivity, in order to do making the penetrance that increases light.
Seeing also Fig. 4, is that thin-film solar cells of the present invention is formed first translucent conductive metal layer of structure and the second enforcement structure graph of the second translucent conductive metal layer.First translucent conductive metal layer 10,10 ' and the second translucent conductive metal layer 40 of thin-film solar cells composition structure 100 of the present invention comprises one of them of one first transparent conductive oxide 50 ' and a transition metal or aluminium; At present embodiment; This first transparent conductive oxide 50 ' is the below that is formed at this transition metal or aluminium; This first transparent conductive oxide 50 ' can be zinc oxide aluminum (AZO), zinc-gallium oxide (GZO) or zinc oxide boron (ZnO) or the like transparent conductive oxide; These a little transparent conductive oxides have lower resistivity, in order to do making the penetrance that increases light.
Seeing also Fig. 5, is that thin-film solar cells of the present invention is formed first translucent conductive metal layer of structure and the 3rd enforcement structure graph of the second translucent conductive metal layer.First translucent conductive metal layer 10,10 ' and the second translucent conductive metal layer 40 that thin-film solar cells of the present invention is formed structure 100 comprises one first transparent conductive oxide 50 ", one of them and one second transparent conductive oxide 60 of a transition metal or aluminium; in the present embodiment; this transition metal or aluminium are to place this first transparent conductive oxide 50 " and second transparent conductive oxide 60 between; This first transparent conductive oxide 50 " and second transparent conductive oxide 60 can be zinc oxide aluminum (AZO), zinc-gallium oxide (GZO) or zinc oxide boron (ZnO) or the like transparent conductive oxide; these a little transparent conductive oxides have lower resistivity, in order to do making the penetrance that increases light.
Thin-film solar cells of the present invention is formed structure, utilizes translucent conductive metal layer to reduce resistance value effectively, to increase conductance; Power capable of using is risen; Thereby improve the efficient of conversion, and replace the nesa coating that has convention now, increase photosphere and penetration length effectively by translucent conductive metal layer; And the increase reflective character, to increase whole conversion efficiency.
Though the present invention discloses as above with preferred embodiment, so be not the scope of implementing in order to qualification the present invention, the simple equivalent of doing according to claims of the present invention and description changes and modification, still belongs to the scope of technical scheme of the present invention.
Claims (9)
1. a thin-film solar cells is formed structure, it is characterized in that comprising at least:
One first translucent conductive metal layer, the one side of this first translucent conductive metal layer are the irradiation face, and in order to take out electric energy and the efficient that promotes opto-electronic conversion;
One n-i-p semiconductor layer, it is formed at this first translucent conductive metal layer below, in order to produce electron hole pair, photoelectric current to be provided and to increase absorptivity; And
One transparency carrier, it is formed at this p-i-n semiconductor layer below.
2. thin-film solar cells as claimed in claim 1 is formed structure, it is characterized in that it further comprises one second translucent conductive metal layer, is formed between aforementioned transparency carrier and the n-i-p semiconductor layer.
3. thin-film solar cells as claimed in claim 1 is formed structure, and the material that it is characterized in that wherein said transparency carrier is glass, quartz, perspex, sapphire substrate or transparent flexual material.
4. thin-film solar cells as claimed in claim 1 is formed structure, it is characterized in that the wherein said first translucent conductive metal layer and the second translucent conductive metal layer are single transition metal or aluminium.
5. thin-film solar cells as claimed in claim 1 is formed structure, it is characterized in that the wherein said first translucent conductive metal layer and the second translucent conductive metal layer comprise one of them of one first transparent conductive oxide and a transition metal or aluminium.
6. thin-film solar cells as claimed in claim 1 is formed structure, it is characterized in that the wherein said first translucent conductive metal layer and the second translucent conductive metal layer comprise one of them and one second transparent conductive oxide of one first transparent conductive oxide, a transition metal or aluminium.
7. form structure like the described thin-film solar cells of arbitrary claim in the claim 4 to 6, it is characterized in that wherein said transition metal is silver or nickel.
8. thin-film solar cells as claimed in claim 7 is formed structure, and the thickness that it is characterized in that wherein said silver is between 3nm～25nm.
9. form structure like claim 5 or 6 described thin-film solar cells, it is characterized in that wherein said first transparent conductive oxide and second transparent conductive oxide are zinc oxide aluminum, zinc-gallium oxide or zinc oxide boron.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105601571A CN102479865A (en) | 2010-11-24 | 2010-11-24 | Film solar battery composition structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010105601571A CN102479865A (en) | 2010-11-24 | 2010-11-24 | Film solar battery composition structure |
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| CN102479865A true CN102479865A (en) | 2012-05-30 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109085723A (en) * | 2018-08-03 | 2018-12-25 | 深圳市华星光电技术有限公司 | Light irradiation apparatus |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4330182A (en) * | 1977-12-05 | 1982-05-18 | Plasma Physics Corporation | Method of forming semiconducting materials and barriers |
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- 2010-11-24 CN CN2010105601571A patent/CN102479865A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4330182A (en) * | 1977-12-05 | 1982-05-18 | Plasma Physics Corporation | Method of forming semiconducting materials and barriers |
| US4330182B1 (en) * | 1977-12-05 | 1999-09-07 | Plasma Physics Corp | Method of forming semiconducting materials and barriers |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109085723A (en) * | 2018-08-03 | 2018-12-25 | 深圳市华星光电技术有限公司 | Light irradiation apparatus |
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Application publication date: 20120530 |