CN102479864A - Single-side electrode polysilicon film solar cell with schottky junction and method for preparing the same - Google Patents
Single-side electrode polysilicon film solar cell with schottky junction and method for preparing the same Download PDFInfo
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- CN102479864A CN102479864A CN2010105700878A CN201010570087A CN102479864A CN 102479864 A CN102479864 A CN 102479864A CN 2010105700878 A CN2010105700878 A CN 2010105700878A CN 201010570087 A CN201010570087 A CN 201010570087A CN 102479864 A CN102479864 A CN 102479864A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a single-side electrode polysilicon film solar cell with a schottky junction and a method for preparing the same. The structure of the solar cell is characterized in that: a piece of ultra-white glass is used as a substrate and a thin film that plays a role in blocking and passivation is arranged on the substrate; an N type polysilicon film is arranged on the thin film; a grid type or comb type aluminum electrode is arranged on the N type polysilicon film; and a grid type or comb type schottky PN node that is formed by the aluminum electrode penetrating into the polysilicon film is arranged inside the polysilicon film. In addition, the invention also discloses a preparation method; the method comprises the following steps that: a substrate is cleaned; a thin film for blocking and passivation is plated on the substrate in a vacuum film coating mode and then an N type polysilicon film is prepared in a liquid phase epitaxial or vacuum film coating mode; a grid type or comb type extraction electrode is printed; strong laser is used to irradiate an aluminium cathode so as to enable a portion of aluminium to penetrate into the polysilicon film to form a grid type or comb type schottky junction; and then sintering is carried out. Because the PN junction is in the grid or comb type, the length of the PN junction is effectively extended; compared with a polysilicon film solar cell with a traditional structure, the provided polysilicon film solar cell enables conversion efficiency to be improved; and the production process is simplified.
Description
One, technical field
The present invention relates to the polycrystal silicon film area of solar cell, especially a kind of structure and method for making thereof of single-side electrode multi-crystal silicon film solar battery of schottky junction.
Two, background technology
Solar energy with the possibility of solar power generation as one of power supply main source, causes that people pay close attention to as the energy a kind of cleaning, that have no pollution day by day.Be the reduction of manufacture of solar cells cost and the raising of transformation efficiency and solve this technological key.
The person skilled of photovoltaic industry has been done a large amount of technological innovations and improvement in order to improve the transformation efficiency of solar cell on the basis of traditional structure.Comprise top layer, resilient coating, contain light absorption district, transition zone, P or the collector grid in N type district and the amorphous silicon thin-film solar cell of electrode that at least one P-N ties like a kind of structure.This is the structure that a kind of sensitive surface can be fully used, and simultaneously, because the collection grid type of bottom PN junction is arranged, increased the effective length of PN junction, thereby improved the transformation efficiency of thin-film solar cells, yet its structure is too complicated, and repeatability is bad.The single-side electrode solar cell that a kind of N of utilization type crystalline silicon is processed has rational structure, and higher transformation efficiency is far superior to conventional crystal silicon solar batteries.Yet, owing to the fragility of silicon chip, consider the yield of product, in large-scale production, be not easy to reach optimal physical dimension.
Three, summary of the invention
Goal of the invention: the object of the present invention is to provide a kind of new and effective single-side electrode multi-crystal silicon film solar battery and method for making thereof.
Technical scheme: the single-side electrode polycrystalline silicon thin film solar cell structure of a kind of schottky junction among the present invention is:
A) the battery orlop is the transparent substrates that light transmittance is good, good adhesion is arranged with respect to the barrier layer:
B) establish one deck on the substrate and have the laminated film that stops with passivation;
C) one deck N type polysilicon membrane is established and at film surface silk-screen palisade or pectination negative electrode in laminated film top, polysilicon membrane inside establish by the aluminium electrode mix form with the suitable Schottky PN junction of negative electrode shape:
D) the polycrystal silicon film surface is provided with and the suitable positive electrode of negative electrode shape, has the gap between the positive and negative electrode.Wherein selected substrate is that light transmittance is good, the ultra-clear glasses or the organic material that have good adhesion with the barrier layer.One of them preferred version is that substrate can form the suede structure that one deck increases light permeable rate through corrosion or plated film mode.
Its passivation layer film adopts individual layer SiO
2Film, individual layer Si
3N
4Film or SiO
2With Si
3N
4Laminated film.
One of them preferred version generates suede structure through the control coating process at film surface for substrate not being carried out matte when handling.
Polysilicon membrane wherein is different according to thin film-forming method, and its crystallite dimension size can be any one in polysilicon, microcrystal silicon, the nano-silicon.
One of them preferred version is the adjustment coating process, and it is two-layer up and down that polysilicon membrane is divided into, and lower floor is the low doping concentration film, and the upper strata is the high-dopant concentration film.
The preparation of polysilicon membrane can be adopted multiple preparation methods such as liquid phase epitaxy, vacuum coating or amorphous silicon membrane conversion.
Wherein polysilicon membrane thickness can be selected between 1 μ m-40 μ m, and its optimal value is 30 μ m.
Wherein silk-screen palisade or pectination aluminium electrode on polysilicon membrane surface use the light laser irradiation to make that part aluminium is atom doped to enter polysilicon membrane inside, to form a plurality of palisades or pectination schottky junction, wherein mix junction depth between 0.1 μ m-1 μ m.
When polysilicon membrane divided two concentration layers of height, its palisade or pectination doping junction depth will penetrate the high concentration polysilicon layer.
Wherein the width of palisade or pectination doping PN junction is mainly selected between 0.01mm-5mm according to precision and optimum PN junction effective length that the silk-screen electrode can reach.
When polysilicon membrane is individual layer, can be preferably earlier carry out the homotype high-concentration dopant to whole film surface, silk-screen palisade or the pectination negative electrode formation schottky junction that mixes again, palisade or pectination are mixed will penetrate homotype high-concentration dopant layer.
According to the shape of negative electrode, silk-screen goes out the positive electrode suitable with its shape, and carries out sintering formation ohmic contact.One of them preferred version is before the silk-screen extraction electrode, at polysilicon membrane upper surface plating SiO
2Perhaps SiN
XPassivation film.
One of them preferred version utilizes the selectivity heating to make the part positive electrode infiltrate inside battery and forms the palisade PN junction for printing positive and negative electrode simultaneously.
Can adopt doping way such as APCVD method, ion implantation, diffusion method, laser made membrane PN junction to the doping of film.According to the difference of doping process, the impurity source can be mist, slurry, liquid, the plasma in impure source.Wherein laser doping feeds the doping process gas PH of certain flow for film substrate is put into vacuum chamber
3, H
2Perhaps B
2H
6, H
2, with the doped scheme on light laser irradiate surface.
Positive electrode can be among aluminium electrode, silver-colored aluminium electrode, the silver electrode any one.
Four, useful achievement
The invention provides a kind of novel single-side electrode multi-crystal silicon film solar battery; Face at polycrystal silicon film uses passivation layer; Can stop that backing material spreads to polysilicon membrane; The chemism on passivation polysilicon membrane surface reduces the recombination rate of charge carrier at film surface, thereby increases conversion efficiency.Simultaneously,,, when having saved material and having improved electricity conversion, also reduced the difficulty of producing, be easy to form large-scale production at the thickness that has reduced materials used owing to avoided using frangible crystal silicon.
Because being palisade on back of the body surface, arranges PN junction; Form continuous " n " the type depletion layer; Can effectively increase the effective length of PN junction, this point all is extremely outstanding advantage with respect to traditional crystal silicon or hull cell, can increase substantially the transformation efficiency of solar cell.
In addition, there is good sunken light action the aluminium at back side back of the body field, can be with not absorbed once more by the sunray bounce back inside battery that absorbs fully.
Before carrying out the palisade doping; Carry out the homogeneity high-concentration dopant at film surface, perhaps, help forming ohmic contact with metal electrode at low concentration polysilicon membrane surface plating one deck high concentration polysilicon membrane; And, help improving fill factor, curve factor because its volume resistance is less.Gate-shaped electrode penetrates the N+ layer, and the vertical N/P that deepens to extend in the inner formation of polysilicon membrane ties and the N+/P knot, and vertically N/P knot and N+/P tie and form horizontal N+/N and just tie the collection rate that can improve photo-generated carrier, thus the short circuit current Isc of raising battery.
Adopt the laser selective irradiation directly the aluminium electrode to be infiltrated through and penetrate the N+ layer in the film, form palisade or pectination Schottky PN junction.The solar cell of this structure is because main PN junction is a schottky junction, and only with a kind of charge carrier-electronics-do delivered charge, its short circuit current is increase further, has saved making technology simultaneously, makes the present technique scheme become more simple.This battery will be more suitable for being used for low-voltage, the workplace of big electric current.
In addition; Owing to adopted membrane structure; This battery also has can large tracts of land production, can on substrate, form independently miniature in a large number sub-battery with the line mode, and it is integrated to form battery through certain structure; After wherein a part of battery is blocked by shade, can not influence the advantage of other part operate as normal.
Five, description of drawings
Accompanying drawing is an operation principle sketch map of the present invention, will combine accompanying drawing and specific embodiment to further specify the present invention below, makes the present invention become more clear.
Accompanying drawing 1 is the typical structure of the single-side electrode multi-crystal silicon film solar battery of schottky junction
Accompanying drawing 2 is the comb-shape electrode structure of the single-side electrode multi-crystal silicon film solar battery of schottky junction
Accompanying drawing 3 is the improvement structure of the single-side electrode multi-crystal silicon film solar battery of schottky junction
Accompanying drawing 4 is the grating structure figure of the single-side electrode multi-crystal silicon film solar battery of schottky junction
Six, embodiment
The invention provides structure of a kind of novel single-side electrode solar cell and preparation method thereof.Its battery structure is: the battery orlop is made as the transparent substrates that light transmittance is good, good adhesion is arranged with respect to the barrier layer.Establish one deck on the substrate and have the laminated film that stops with passivation; Substrate glass or laminated film can select to form anti-reflection suede structure.The laminated film top is established one deck polysilicon membrane and at film surface silk-screen palisade or pectination aluminium negative electrode, is made part aluminium atom get into inner palisade or the pectination schottky junction of forming of polysilicon membrane through the selectivity heating.
Perhaps,
Before doping, it is two-layer up and down that polysilicon membrane is divided into, and lower floor is the low concentration doping polysilicon membrane, and the upper strata is the high-concentration dopant layer polysilicon film.Carry out the doping of palisade or pectination and will penetrate the high concentration layer polysilicon film.The polysilicon membrane of two-layer variable concentrations can form by regulating coating process, also can form through on polysilicon membrane, carrying out the integral body doping.
Aluminium or silver-colored aluminium extraction electrode in the position printing of not printing the aluminium electrode on the substrate perhaps adopt and print positive and negative electrode simultaneously then, utilize the selectivity heating to make the part positive electrode infiltrate inside battery and form the palisade PN junction.
To further specify the present invention with specific embodiment below, so that the present invention becomes more clear:
Embodiment one: like accompanying drawing 1, shown in Figure 2, ultra-clear glasses a slice of selecting 300 * 300 * 3.0mm is as single-side electrode multi-crystal silicon film solar battery substrate 6.Plate the SiO of the about 20nm of one deck on the ultra-clear glasses surface
2Do and stop and passivation laminated film 4 that the adopting process means make the contacted interface of film and ultra-clear glasses have suede structure 5.On laminated film, establishing a layer thickness is the N type polysilicon membrane 3 of 15 μ m.Establish N type pectination in film inside and mix 2; Forming doping depth is 1 μ m; Width is the Schottky PN junction of 0.5mm, the palisade doping position and not doping position establish pectination aluminium negative electrode 11, aluminium positive electrode 12 respectively, as the extraction electrode of solar cell; Electrode width is confirmed according to the PN junction width, is guaranteed that positive and negative electrode does not contact.
Present embodiment is the typical structure of single-side electrode multi-crystal silicon film solar battery, does sensitive surface with the ultra-clear glasses that light transmittance is good, and sensitive surface does not have and blocks, and can at utmost accept solar energy.The preparation of pectination doping PN junction increases effective PN junction length, increases photoelectric conversion efficiency.Owing to adopt membrane structure, make the controllable thickness of polysilicon layer, the distance that light reaches PN junction shortens, and light loss diminishes.Simultaneously, compare and adopt the crystal silicon sheet, can form the large tracts of land product, its large-scale production also is easier to realize high yield.
Embodiment two: like accompanying drawing 3, shown in 4, ultra-clear glasses a slice of selecting 100 * 100 * 3.0mm is as single-side electrode multi-crystal silicon film solar battery substrate 6.Establish the SiO of the about 20nm of one deck then on the ultra-clear glasses surface
2Do and stop and passivation laminated film 4, and establish suede structure 5 in film interface, above laminated film, establishing a layer thickness is the low doping concentration N type polysilicon membrane 3 of 10 μ m.Establish palisade aluminium electrode 72,71 then on the polysilicon membrane surface, width is 0.5mm, between negative electrode 72 and polysilicon membrane, establishes grid-shaped Schottky knot 9, and the degree of depth is 0.5 μ m.Between positive electrode 71 and polysilicon membrane, establish the N of 0.05 μ m thickness
+Doped layer 8
Solar battery structure in the present embodiment penetrates the N+ layer owing to adopt the laser selective irradiation directly the aluminium electrode to be infiltrated through in the film; Form palisade aluminium electrode; This aluminium electrode and substrate form N/P and the vertical schottky junction of N+/P, form Schootky scolar cell.This solar cell is because main PN junction is a schottky junction; Only with a kind of charge carrier-electronics-do delivered charge, except that the advantage with above-mentioned scenarios, its short circuit current can further increase; This battery will be more suitable for being used for low-voltage, the workplace of big electric current.
Embodiment three: ultra-clear glasses a slice of selecting 300 * 300 * 3.0mm is as single-side electrode multi-crystal silicon film solar battery substrate.Plate the Si of the about 20nm of one deck on the ultra-clear glasses surface
3N
4Do and stop and the passivation laminated film.Plating one layer thickness is the N type polysilicon membrane of 15 μ m on laminated film.At N type film surface silk-screen palisade aluminium negative electrode; And adopt the mode of light laser irradiation to mix at the inner N of formation of film type palisade; Forming doping depth is 1 μ m, and width is the Schottky P N knot of 0.5mm, then the silk-screen palisade silver aluminium positive electrode on the polysilicon membrane surface; Electrode width is confirmed according to the PN junction width, is guaranteed that positive and negative electrode does not contact.At last hull cell is heat-treated, make positive electrode and polycrystal silicon film surface form ohmic contact.
Embodiment four: ultra-clear glasses a slice of selecting 100 * 100 * 3.0mm is as single-side electrode multi-crystal silicon film solar battery substrate.Plate the SiO of the about 20nm of one deck then on the ultra-clear glasses surface
2+ Si
3N
4Do and stop and the passivation laminated film, and establish suede structure in film interface, plating one layer thickness is the low doping concentration N type polysilicon membrane of 10 μ m above laminated film.Plating one deck doping content again on the polysilicon membrane surface then is N
+The polysilicon membrane of 0.05 μ m thickness.At the positive and negative aluminium electrode of polysilicon membrane surface silk-screen pectination, adopt light laser that elective irradiation is carried out in the negative electrode position then, thereby make the atom doped inner N of formation of polysilicon membrane of going into of aluminium shape schottky junction, guarantee that junction depth is greater than 0.05 μ m.Adopt sintering process then, just positive electrode and polysilicon membrane form ohmic contact, accomplish technology.
Embodiment five: ultra-clear glasses a slice of selecting 100 * 100 * 3.0mm is as single-side electrode multi-crystal silicon film solar battery substrate.Plate the SiO of the about 20nm of one deck then on the ultra-clear glasses surface
2+ Si
3N
4Do and stop and the passivation laminated film, and establish suede structure in film interface, plating one layer thickness is the low doping concentration N type polysilicon membrane of 10 μ m above laminated film.Carrying out doping content on the polysilicon membrane surface then is N
+Homotype mix, doping thickness is 0.05 μ m.At the positive and negative aluminium electrode of polysilicon membrane surface silk-screen pectination, adopt light laser that elective irradiation is carried out in the negative electrode position then, thereby make the atom doped inner N of formation of polysilicon membrane of going into of aluminium shape schottky junction, guarantee that junction depth is greater than 0.05 μ m.Adopt sintering process then, just positive electrode and polysilicon membrane form ohmic contact, accomplish technology.
The invention provides a kind of structure and manufacture method of single-side electrode multi-crystal silicon film solar battery; The method and the approach of concrete this technical scheme of realization are a lot, and the above only is a preferred implementation of the present invention, should be understood that; For those skilled in the art; Under the prerequisite that does not break away from the principle of the invention, can also make some improvement and retouching, these improvement and retouching also should be regarded as protection scope of the present invention.The all available prior art of each part not clear and definite in the present embodiment realizes.
Claims (10)
1. the single-side electrode multi-crystal silicon film solar battery of a schottky junction comprises transparent substrates, is located at the transparent conductive electrode of transparent substrates one side; Be located at the passivation layer on the transparent conductive electrode; Be located at the N type layer polysilicon film of passivation layer top, it is characterized in that structure is:
A) said N type polysilicon membrane is provided with the negative electrode that constitutes schottky junction with said N type substrate, said electrode subparticipation photoelectricity transferring structure, part projected current.
B) positive electrode of said polycrystal silicon film surface setting and said negative electrode shape adaptation, said positive electrode and said N type substrate form ohmic contact, as another utmost point of projected current.
2. the single-side electrode multi-crystal silicon film solar battery of a kind of schottky junction according to claim 1 is characterized in that, said polysilicon membrane is a N type polysilicon membrane, between said polysilicon membrane upper surface and the positive electrode N+ doped layer is set;
3. the single-side electrode multi-crystal silicon film solar battery of a kind of schottky junction according to claim 1 is characterized in that, said polysilicon membrane thickness is 1 μ m-40 μ m.
4. according to the single-side electrode multi-crystal silicon film solar battery of claim 1 or 2 or 3 described a kind of schottky junctions, it is characterized in that said PN junction doping width is 0.01mm～5mm, the degree of depth is 0.1 μ m～1 μ m.
5. the single-side electrode multi-crystal silicon film solar battery of a kind of schottky junction according to claim 4 is characterized in that, is saidly just conducting electricity a kind of in very silver electrode, aluminium electrode, the silver-colored aluminium electrode.
6. by the single-side electrode multi-crystal silicon film solar battery and the method for making thereof of the described a kind of schottky junction of claim 2, it is characterized in that substrate can form the suede structure that one deck increases light permeable rate through corrosion or plated film mode.
7. a method for preparing the single-side electrode multi-crystal silicon film solar battery of the described a kind of schottky junction of claim 1 is characterized in that, may further comprise the steps:
A) plating doping content lower floor is N above the said passivation layer, and the upper strata is N
+Layer polysilicon film as the main part of photoelectric conversion unit.
B) at the negative electrode of said polysilicon membrane upper surface silk-screen palisade or pectination, use light laser that it is carried out elective irradiation, polysilicon membrane forms schottky junction to make the part aluminum metal mix into, and doping thickness penetrates N
+Layer, the palisade or the pectination PN junction of a plurality of to form " n " shape carry out the photoelectricity conversion effet:
C) said polycrystal silicon film surface setting and the suitable positive electrode of negative conductive electrode shape are to draw the electric current that PN junction produces.Wherein the positive electrode area is less than PN junction doped region area;
8. the single-side electrode multi-crystal silicon film solar battery of a kind of schottky junction according to claim 7 is characterized in that, is saidly just conducting electricity a kind of in very silver electrode, aluminium electrode, the silver-colored aluminium electrode.
9. a method for preparing the single-side electrode multi-crystal silicon film solar battery of the described a kind of schottky junction of claim 1 is characterized in that, may further comprise the steps:
A) establish the main part of N type layer polysilicon film above the said passivation layer as photoelectric conversion unit.
B) said N type layer polysilicon film integral body is carried out N
+Mix, formation lower floor is N, and the upper strata is N
+Membrane structure.
C) at the negative electrode of said polysilicon membrane upper surface silk-screen palisade or pectination, use light laser that it is carried out elective irradiation, polysilicon membrane forms schottky junction to make the part aluminum metal mix into, and doping thickness penetrates N
+Layer, palisade of a plurality of to form " n " shape or pectination P N knot carry out the photoelectricity conversion effet:
D) said polycrystal silicon film surface setting and the suitable positive electrode of negative conductive electrode shape are to draw the electric current that P N knot produces.Wherein the positive electrode area is less than PN junction doped region area;
10. like the single-side electrode multi-crystal silicon film solar battery and the method for making thereof of claim 7 and the described a kind of schottky junction of claim 9, it is characterized in that to adopt doping way such as ion implantation, diffusion method, laser made membrane PN junction to the doping of film.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104659117A (en) * | 2013-11-25 | 2015-05-27 | 东莞南玻光伏科技有限公司 | Solar photovoltaic module |
| CN117727822A (en) * | 2024-02-07 | 2024-03-19 | 浙江晶科能源有限公司 | Solar cell, method for manufacturing solar cell, and photovoltaic module |
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| JPH11195798A (en) * | 1995-01-09 | 1999-07-21 | Semiconductor Energy Lab Co Ltd | Solar cell |
| JP2004039751A (en) * | 2002-07-01 | 2004-02-05 | Toyota Motor Corp | Photovoltaic element |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104659117A (en) * | 2013-11-25 | 2015-05-27 | 东莞南玻光伏科技有限公司 | Solar photovoltaic module |
| CN117727822A (en) * | 2024-02-07 | 2024-03-19 | 浙江晶科能源有限公司 | Solar cell, method for manufacturing solar cell, and photovoltaic module |
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Application publication date: 20120530 |