CN102468423A - 压电元件的制造方法 - Google Patents
压电元件的制造方法 Download PDFInfo
- Publication number
- CN102468423A CN102468423A CN201110309740XA CN201110309740A CN102468423A CN 102468423 A CN102468423 A CN 102468423A CN 201110309740X A CN201110309740X A CN 201110309740XA CN 201110309740 A CN201110309740 A CN 201110309740A CN 102468423 A CN102468423 A CN 102468423A
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- China
- Prior art keywords
- piezoelectrics
- piezoelectric element
- till
- polarization
- manufacturing approach
- Prior art date
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- 229910052726 zirconium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
- H10N30/2041—Beam type
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/04—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning
- H10N30/045—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning by polarising
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
- H10N30/082—Shaping or machining of piezoelectric or electrostrictive bodies by etching, e.g. lithography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
- H10N30/2047—Membrane type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/88—Mounts; Supports; Enclosures; Casings
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
- B06B1/0603—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using a piezoelectric bender, e.g. bimorph
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- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
- B06B1/0688—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction with foil-type piezoelectric elements, e.g. PVDF
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
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- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
- B06B1/0688—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction with foil-type piezoelectric elements, e.g. PVDF
- B06B1/0696—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction with foil-type piezoelectric elements, e.g. PVDF with a plurality of electrodes on both sides
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K31/00—Actuating devices; Operating means; Releasing devices
- F16K31/004—Actuating devices; Operating means; Releasing devices actuated by piezoelectric means
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- H—ELECTRICITY
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- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/022—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the cantilever type
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Abstract
本发明提供一种获得具备薄且无翘曲、扁平的烧成压电体的压电元件的方法。即,提供一种压电元件的制造方法,其具有如下过程:在相对于极化方向垂直的方向上,在至少两个部位约束烧成压电体,并将该烧成压电体极化。
Description
技术领域
本发明涉及制造具备薄且无翘曲、平坦的烧成压电体的压电元件的方法。
背景技术
近年来,在光学、精密机械、半导体制造等领域,以亚微米级调整光程长度和位置的位移控制器件一直备受期待。对此,促进了压电器件的开发,所述压电器件有:利用了基于在压电体上施加电场时所引起的反压电效应而产生的应变(位移、变形)的压电执行器、利用了基于压电效应而在压电体上施加压力时所引起的电荷产生(极化)的压电传感器等。
构成压电器件的核心的部分是用电极夹持压电体而形成的压电元件。其中的压电体可利用薄膜法将压电材料成形为膜状,并在高温下进行烧成而制作(以下,将这样获得的压电体称为烧成压电体)。该烧成压电体由于其本身的自发极化(电荷的偏移)的方向不一致,因此几乎不发生应变,无法用作压电元件。
因此,通常在用电极夹持烧成压电体而形成的压电元件的制造工序中,对压电元件实施极化处理。极化处理通常在即将进行清洁等最终工序之前进行。极化处理的对象当然是构成压电元件的烧成压电体。该极化处理一般通过在大气中或液体中施加几十分钟左右的几kV/mm的电压来进行。经极化处理的烧成压电体(压电元件)的自发极化的朝向在大致相同的方向上一致,即使不施加电压也不会回到原来的状态,会具有极化值(剩余极化)。这样,对其施加电压时(施加电场时),会发生基于其大小的应变(位移、变形)。
另外,作为有关压电体(压电陶瓷)的极化的现有技术文献,例如可举出专利文献1。该专利文献1中记载了压电特性的经时劣化小的极化方法,具体而言,公开了施加高频电场的方法、与极化方向平行地施加压缩力的方法等。
现有技术文献
专利文献
专利文献1:日本特开2004-296783号公报
专利文献2:日本特开2001-068751号公报
发明内容
发明要解决的课题
这样,伴随着近年的电子设备小型化、薄型化、省电化,对搭载在该电子设备上的压电器件及构成该压电器件的压电元件也要求薄型化、小型化。另外,例如像专利文献2所记载的那样,压电器件(压电执行器)有时采取将压电元件与金属板粘接的结构。在这样的形态下,如果不是扁平的(平坦的)压电元件,则与金属板粘接的面积有偏差,难以获得规定的位移。因此,为了形成扁平的压电元件,需要扁平的烧成压电体。由此可以说,对于压电元件,期待薄且无翘曲、扁平的烧成压电体。
但是,薄的烧成压电体是经过加工、烧成而得到的,在得到之前的过程中,容易在烧成压电体的表面、背面上的结晶取向度、结晶形态或自发极化状态中产生差异。因此,在极化处理时会发生翘曲,作为极化处理后的烧成压电体,难以得到无翘曲且扁平的烧成压电体(压电元件)。并且,例如仿照上述专利文献1中公开的极化方法,与极化方向平行地施加压缩力而进行极化处理时,压电元件(烧成压电体)有时会破损。
本发明是鉴于上述情况而完成的,其课题在于提供一种在不产生破损的情况下得到具备薄、无翘曲且扁平的烧成压电体的压电元件的方法。经反复研究,结果发现,通过在与极化方向垂直的方向上,在至少两个部位(从2个方向)约束烧成压电体(压电元件),并进行极化,可解决本课题。
解决课题的方法
即,首先,根据本发明,提供一种压电元件的制造方法,其为制造具备薄板状的烧成压电体和在该烧成压电体的两面上形成的膜状的电极的压电元件的方法,具有在相对极化方向的垂直方向上,在至少两个部位约束烧成压电体,并将该烧成压电体极化的过程。
将烧成压电体极化的过程(极化处理工序)通常位于整个压电元件的制造工序的结束阶段。极化前的压电元件可使用任何方法来制作。极化方向是指想要一致的自发极化的方向(朝向)。该极化方向通常是相对于对向的一对电极的面方向为垂直的方向,薄板状的烧成压电体的情况下,由于在与烧成压电体的厚度方向垂直的面上形成一对电极,因此其厚度方向为极化方向。于是,这种情况下,相对极化方向的垂直方向为在薄板状的烧成压电体的面上设置的电极的面方向。因此,约束烧成压电体的部位为薄板状的烧成压电体的面方向的任一处,优选约束烧成压电体的部位为薄板状的烧成压电体的(面方向的)端部。
于是,在本发明所涉及的压电元件的制造方法中,优选约束上述薄板状的烧成压电体的部位为该烧成压电体的长度方向的两端。
薄板状的烧成压电体的长度方向是指把薄板状的烧成压电体看做平面图形时,通过其重心,从一个端部到另一个端部的距离最大的方向。薄板状的烧成压电体为圆形时,长度方向无特别规定,为正方形时,只要限定为边的方向,则长度方向也无特别规定,但除此以外也可有别的规定。
在本发明所涉及的压电元件的制造方法中,优选在约束上述薄板状的烧成压电体的部位,(每一个部位)从多个方向把持烧成压电体,从而约束该烧成压电体。
所谓(每一个部位)从多个方向把持烧成压电体,换言之,是指在约束烧成压电体的部位,从烧成压电体来看,其把持部分岔开的状态。
在本发明所涉及的压电元件的制造方法中,优选在极化后切断约束上述薄板状的烧成压电体的部位。在这种情况下,其切断的方法优选为选自电子射线、离子束、刻蚀、喷砂加工、激光加工中的任一方法。
接着,根据本发明,提供一种烧成压电体的极化方法,其为在相对于极化方向垂直的方向上,在至少两个部位约束薄板状的烧成压电体,并将该烧成压电体极化。
在本发明所涉及的压电元件的制造方法及本发明所涉及的烧成压电体的极化方法中,极化处理通过在大气中或液体中施加几十分钟左右的几kV/mm的电压来进行。优选通过在大气中施加1~30分钟左右的1~16kV/mm的电压来进行。更加优选的电压为2~10kV/mm,更加优选的施加时间为5~20分钟。
另外,在本说明书中称为压电或压电体,只要为由表现出因电场引起的应变的材料构成,且需要极化处理的压电体,则包含在其中。通常,由强电介质材料构成的压电体几乎都包含在其中。但是,由不需要极化处理的电致伸缩材料构成的压电体除外。
发明效果
本发明所涉及的压电元件的制造方法及本发明所涉及的烧成压电体的极化方法由于在相对于极化方向垂直的方向上,在至少两个部位进行约束并极化烧成压电体,因此可得到即使烧成压电体为薄板状也难以产生翘曲,且平坦的烧成压电体(压电元件)。在极化处理中,烧成压电体(压电元件)也不会被破坏,从而可制作良好地进行了极化处理的压电元件(烧成压电体)。这是因为:通过在相对于极化方向垂直的方向上的两个部位以上的约束,变形受到抑制,同时因极化而发生的要导致变形的内部应力(变形应力)可转换成在相对于极化方向垂直的方向上的两个部位以上的约束部分的伸长和弯曲变形。
如果在相对于极化方向垂直的方向上,在三个部位以上进行约束,则与两个部位的情况相比,上述效果可稳定地获得。即,可得到更加难以产生翘曲、更加平坦(平面度优异)且破裂等损害少的极化处理后的烧成压电体(压电元件)。但是,由于约束部位(约束部分)之后需要切断,制造工序变复杂,因此特别优选与元件的形状匹配而在2~4个部位约束烧成压电体。
如果与本发明所涉及的压电元件的制造方法以外的方法相比,则无论约束薄板状的烧成压电体的部位是多少均可获得上述效果,但对于本发明所涉及的压电元件的制造方法,在其优选形态中,由于约束薄板状的烧成压电体的部位是该烧成压电体的长度方向的两端,因此与非上述形态的情况相比,可稳定地获得上述效果。即,烧成压电体(烧成元件)为更加难以产生翘曲、更加平坦(平面度优异)的压电体。在极化处理中烧成压电体(压电元件)被破坏的可能性更小。
对于本发明所涉及的压电元件的制造方法,在其优选形态中,在约束薄板状的烧成压电体的部位,(在其一个部位)从多个方向把持烧成压电体,从而约束该烧成压电体,因此与非上述形态的情况相比,可稳定地获得上述效果。即,烧成压电体(烧成元件)为更加难以产生翘曲、更加平坦(平面度优异)的压电体。在极化处理中烧成压电体(压电元件)被破坏的可能性更小。这是因为:由极化而发生的要导致变形的内部应力(变形应力)转换成在相对于极化方向垂直的方向上的形成压电元件的部分以外的约束部分,即从多个方向的把持部分的伸长和弯曲变形。
本发明所涉及的压电元件的制造方法在其优选形态中,由于在极化后切断约束薄板状的烧成压电体的部位,因此可获得翘曲小、平坦的压电元件。即,由于不会残留由极化引起的应力,因此即使切断被约束的部位,也可得到保持被约束时的状态的压电元件。另外,切断的方法如果为选自电子射线、离子束、刻蚀、喷砂加工、激光加工中的任一方法,则与其他方法相比,可以在对压电元件的加工应力更小的状态下切断约束部分,从而可得到翘曲等小的压电元件。
附图说明
图1为表示烧成压电体的一例的立体图。
图2为表示本发明所涉及的压电元件的制造方法的一实施方式的截面图,为表示工序(1)~(3)的图。
图3为表示本发明所涉及的压电元件的制造方法的一实施方式的截面图,为表示工序(I)~(VIII)的图。
图4为表示本发明所涉及的压电元件的制造方法的一实施方式的平面图(俯视图),为表示图3中的工序(VII)的状态的图。
图5为表示本发明所涉及的压电元件的制造方法的另一实施方式的平面图(俯视图),为与图4对应的图。
图6为表示本发明所涉及的压电元件的制造方法的另一实施方式的平面图(俯视图),为与图4对应的图。
图7为表示本发明所涉及的压电元件的制造方法的另一实施方式的平面图(俯视图),为与图4对应的图。
符号说明
1:烧成压电体、11:通孔、21:生片、22:加强部、23:带有加强部的烧成压电体、33:电极、34:电极、38:抗蚀剂、39:树脂、41:接合部、42:接合部、42a:接合部、42b:接合部、53a:接合部、53b:接合部、63a:接合部、63b:接合部、73:贯通孔、74:贯通孔、100:压电元件、100B:压电元件前体。
具体实施方式
以下,关于本发明的实施方式,一边适宜地参照附图一边进行说明,但本发明不应限定于这些实施方式来解释,只要在不脱离本发明的范围的限度内,可根据本领域技术人员的知识而添加各种变更、修正、改良。例如,附图表示优选的本发明的实施方式,但本发明并不受附图所表示的形态和附图所表示的信息的限制。在实施或验证本发明的方面,可使用与本说明书中记述的方法同样的方法或同等的方法,但优选的方法为以下所记述的方法。
另外,以下说明的本发明所涉及的压电元件的制造方法为同时制作多个压电元件的制造方法(多个采集)。在后述的图4的例子中为6个采集,当然,在量产中可以进行几十个以上的多个采集。另外,图3中的工序(VII)的状态如图(4)所示,但图3为截面图,与此相对,该图4中以平面图表示。表示工序的图3为在相对于压电元件的长度方向垂直的平面上切下的截面图,换言之,图3的工序(VII)表示的截面是:在图4中包含压电元件并在横向(左右方向)切断时的截面。因此,包含这些压电元件的整个附图为以制造过程容易理解的方式描绘的示意图,例如,烧成压电体的厚度和电极的厚度在实用上的优选状态并未描绘,当然,这是应是可以理解的。
本发明所涉及的压电元件的制造方法为得到具备薄且无翘曲、平坦的烧成压电体的压电元件的方法,因此首先,对烧成压电体进行说明。图1所示的烧成压电体1为单层的压电体。该烧成压电体1的平面形状大致为正方形,烧成压电体的外形无特别限定。考虑生产率时,理想的是通过机械加工所获得的外形的形状,优选以直线形成的形状,例如多边形,特别优选正方形或长方形。
通过本发明所涉及的压电元件的制造方法所得到的压电元件并未图示,为在图1所示的烧成压电体1的两面上形成膜状的电极而得到的压电元件。压电元件可以采取以下形态:使用具有多层结构的烧成压电体,且具有在其两面(外侧的两面)上形成的膜状的电极和在单层之间的面上形成的膜状的电极。即,可以为重复电极、烧成压电体、电极、烧成压电体、电极这样的层叠结构而形成的形态。作为这种情况下的层叠数目,作为烧成压电体的数目优选为3,作为电极的数目优选为4,也可以为上述数目以上的数目。
接着,对本发明所涉及的压电元件的制造方法,例示其实施方式来说明。本发明所涉及的烧成压电体的制造方法中,使用压电材料来制作薄的生片21(参照图2的工序(1))。具体而言,例如,在锆钛酸铅等陶瓷粉末中添加混合粘合剂、溶剂、分散剂、增塑剂等来制作浆料,并对其进行脱泡处理后,通过逆转辊涂布机法、刮刀法等方法来制作具有上述厚度的生片,之后,通过剪裁而得到所希望大小的生片21。生片21是形成之后构成压电元件的烧成压电体的材料。
接着,在锆钛酸铅等陶瓷粉末中添加混合粘合剂、溶剂、分散剂、增塑剂等来制作糊,使用丝网印刷法,在生片21上形成所希望厚度的加强部22(参照图2的工序(2))。
然后,基于所使用的压电材料,在800~1300℃范围的适当温度下进行烧成,从而得到带有加强部的烧成压电体23(参照图2的工序(3)和图3的工序(I))。带有加强部的烧成压电体23是指将烧成用的加强部22和生片21进行一体烧成而形成的烧成压电体。
接着,在带有加强部的烧成压电体23上,例如使用激光形成通孔11(参照图3的工序(II))。也可以在制作带有加强部的烧成压电体23之前形成通孔11。这种情况下,使用丝网印刷法,例如在PET(聚对苯二甲酸乙二醇酯)膜上形成设置有通孔11的状态的生片21,在其上利用丝网印刷法形成加强部22,在通孔打开的状态下,基于所使用的压电材料而在800~1300℃范围的适当温度下进行烧成,从而可得到带有加强部的烧成压电体23。
然后,例如进行抗蚀图成图,利用旋涂法涂布导电性材料(例如金)的糊,从而在形成了通孔11的带有加强部的烧成压电体23的两面上及通孔11中形成由导电性材料(例如金)构成的膜状的电极33、34(参照图3的工序(III))。电极33、34的形成也可通过溅射处理来进行。图案形成也可通过激光加工来进行。
接着,进行带有加强部的烧成压电体23的进一步补强,并进行抗蚀剂成图,从而将之后成为压电元件的部分(压电元件前体)形成所希望的形状。具体而言,在带有加强部的烧成压电体23的带有加强部(其为被烧成的部分)的一侧填充树脂39(参照图3的工序(IV)),之后,在通过例如曝光法而除去带有加强部的烧成压电体23上的想要切除的部分的部分上,涂布抗蚀剂38(参照图3的工序(V))。涂布抗蚀剂38后,也可以填充树脂39。然后,例如通过湿法刻蚀处理或喷砂处理来切除带有加强部的烧成压电体23及电极33、34的一部分(参照图3的工序(VI)),例如利用剥离剂而除去抗蚀剂38,从而得到所希望的形状的压电元件前体100B(参照图3的工序(VII)及图4)。压电元件前体100B为之后成为压电元件的部分,由从带有加强部的烧成压电体23除去加强部等而得的烧成压电体1和电极33、34构成,如果进行极化处理并以单片取出,则可作为压电元件100出货。所希望的形状是指例如该压电元件前体100B那样的形状(参照图4),但并无限定。
由于尚在未进行极化处理之前,因此压电元件前体100B具有接合部41、42是很重要的(参照图4)。该接合部41、42是与带有加强部的烧成压电体23中的之后不会成为压电元件的部分(框体)接合的部分,严格来说,是构成压电元件前体100B的烧成压电体1与框体接合的部分。换言之,在为了得到压电元件前体100B时,要切除带有加强部的烧成压电体23及电极33、34的一部分,以设置接合部41、42。在进行极化处理之前,不将压电元件前体100B以单片割开。
然后,将电源与压电元件前体100B的电极33、34连接,在压电元件前体100B的烧成压电体1上,例如在大气中施加1~30分钟的1~16kV/mm的电压,对烧成压电体1进行极化处理。此时,极化方向为从电极33朝向电极34的方向(或其相反方向)。该方向为压电元件前体100B(烧成压电体1)的厚度方向。另外,相对于极化方向垂直的方向为压电元件前体100B(烧成压电体1)的面方向。因此,通过接合部41、42而与框体(带有加强部的烧成压电体23中的之后不会成为压电元件100的部分)接合的压电元件前体100B(烧成压电体1)在极化处理中,在相对于极化方向垂直的方向上被接合部41、42的两个部位约束。
接合部41、42可称作极化处理中的约束部。压电元件前体100B(烧成压电体1)在图4中的上下方向上可叫做长度,因此约束压电元件前体100B(烧成压电体1)的部位(约束部分)位于压电元件前体100B(烧成压电体1)的长度方向的两端。
如果经过上述过程,则压电元件前体100B成为可使用(可位移)的压电元件100。之后,进行必要的特性检查,例如使用激光加工机在接合部41、42切断而得到单片(参照图3的工序(VIII)),经过洗涤,最终检查(外观、尺寸的确认),则可取将压电元件100出货。
如图5和图6所示,除了接合部41、42以外,压电元件前体还优选具有接合部53a、53b及接合部63a、63b。这种情况下,压电元件前体(烧成压电体)在极化处理中,在相对于极化方向垂直的方向上被接合部41、42、53a、53b四个部位或接合部41、42、63a、63b四个部位约束。图5中,压电元件前体100B和框体(带有加强部的烧成压电体23中的之后不会成为压电元件100的部分)相对于压电元件前体100B的边(图5中)而垂直地连接,如图6所示,也可以不垂直而倾斜地连接。
如图7所示,在接合部42附近,也优选在框体(带有加强部的烧成压电体23中的之后不会成为压电元件100的部分)上设置贯通孔73、74。由于贯通孔74的存在,压电元件前体(烧成压电体)在极化处理中,在相对于极化方向垂直的方向上被接合部41、42a、42b三个部位约束。从接合部42a、42b一侧来看,贯通孔73以将框体分成2个方向的方式形成。这种情况下,压电元件前体(烧成压电体)在极化处理中,在相对于极化方向垂直的方向上被接合部41、42a、42b三个部位约束,对于两个接合部42a、42b(约束部分)而言,从两个方向把持烧成压电体(压电元件前体),从而约束该烧成压电体(压电元件前体),因此可以将因极化而发生的会导致产生翘曲的内部应力(导致变形的变形应力)转换成两个方向的伸长和弯曲变形。将压电元件前体的宽度设为A、将接合部42a、42b各自的宽度设为B、将贯通孔73和74之间的宽度设为C时,优选为A>B、A>C。
以上说明了烧成压电体为1层(单层)的情况,烧成压电体为2层以上时,首先,另外在生片上利用丝网印刷法等形成内部电极(用烧成压电体夹持的电极)。然后,将该生片和上述生片21(参照图2的工序(1))按照夹持电极形成面的方式进行接合,从而制作层叠生片(为3层以上时,重复该工序)。之后,利用丝网印刷法形成该层叠生片和上述加强部22(参照图2的工序(2))。然后,只要经过图3所示的工序,则可以得到多层的层叠体。此时,为了与内部电极实现导通,可以在生片21上形成通孔、贯通电极。
接着,对用于压电元件的材料进行说明。作为烧成压电体的材料(压电材料),可以为引起反压电效应等电场致应变的材料,只要为需要极化的材料,则没有规定。可根据用途从压电材料或强电介质陶瓷中适宜地选择并采用。
具体而言,作为优选的材料,可列举锆酸铅、钛酸铅、镁铌酸铅、镍铌酸铅、镍钽酸铅、锌铌酸铅、锰铌酸铅、锑锡酸铅、锑铌酸铅、镱铌酸铅、锰钨酸铅、钴铌酸铅、镁钨酸铅、镁钽酸铅、钛酸钡、钛酸钠铋、钛酸铋钕(BNT)、铌酸钾钠、钽酸锶铋、铜钨钡、铁酸铋、或由这些中的2种以上组成的复合氧化物。还可以在这些材料中添加下述物质或被下述物质取代:稀土类元素、钙、锶、钼、钨、钡、铌、锌、镍、锰、镉、铬、钴、锑、铁、钽、锂、铋、锡、铜等的氧化物。这些物质中,在锆酸铅、钛酸铅的复合氧化物中用锶取代铅的一部分,用铌取代锆和/或钛的一部分而得到的材料由于表现出高材料特性而优选。在上述材料等中添加了铋酸锂、硼酸锂、碳酸锂、锗酸铅等的材料由于可实现压电体的低温烧成且表现出高材料特性而更加优选。
对于带加强部的材料,也可使用上述压电材料。为了使热膨胀的程度相同,优选使用与烧成压电体相同的材料。
接着,作为电极的材料,可采用导电性的金属。例如优选使用1种或组合使用2种以上的下述物质:铝、钛、铬、铁、钴、镍、铜、锌、铌、钼、钌、钯、铑、银、锡、钽、钨、铱、铂、金或铅等金属单体,或者由这些金属单体的2种以上组成的合金,例如银-铂、铂-钯、银-钯等。另外,还可以为这些材料与氧化铝、氧化锆、氧化钛、氧化硅、氧化铈、玻璃或压电材料等的混合物、合金陶瓷。当选择这些材料时,优选根据压电材料的种类进行选择。
实施例
以下通过实施例来具体地说明本发明,但本发明并不限定于这些实施例。
(实施例1)根据本发明所涉及的压电元件的制造方法,制作像图7中的一个压电元件前体那样的被三个接合部约束的压电元件前体。具体而言,首先得到2mm×4mm的长方形、厚度为15μm的烧成压电体。烧成压电体的厚度为15μm,对于烧成压电体的表面粗糙度Ra,一面为0.19μm,另一面为0.1μm。作为压电材料,使用0.17Pb(Mg1/3Nb2/3)O3-0.03Pb(Ni1/3Nb2/3)O3-0.43PbTiO3-0.37PbZrO3。对于烧成用的加强部(相当于图2的工序(2)所示的加强部22),也使用相同的压电材料,利用丝网印刷法形成,并将厚度设为30μm。烧成在1200℃下进行2小时。电极使用金(Au),并通过溅射处理形成。电极形成后,通过喷砂加工法来得到压电元件前体。
然后,对于在被约束状态下的压电元件前体,在室温下(大气中)施加15分钟的5kV/mm的电压,进行极化处理,从而得到压电元件。使用基恩士(KEYENCE)制造的激光位移传感器(LK-G5000),测定10个元件的弯曲量,结果为0.2~3μm。之后,用10V、5kHz的矩形波进行1个小时的驱动耐久试验,确认到没问题。
(实施例2)制作像图4中的一个压电元件前体那样的被两个接合部约束的压电元件前体。除此以外,与实施例1同样地操作,进行极化处理,得到压电元件,测定10个元件的弯曲量,结果为0.5~30μm。然后,用10V、5kHz的矩形波进行1个小时的驱动耐久试验,确认到没问题。
(比较例1)制作无任何约束的压电元件前体。除此以外,与实施例1同样地操作,进行极化处理,得到压电元件,测定10个元件的弯曲量,结果为100~500μm。
产业上的可利用性
本发明所涉及的压电元件的制造方法可合适地用作制造压电元件的方法,所述压电元件被设置在用于计量器、调光器、光开关、微型灯泡、运送装置、图像显示装置(显示器、放映机等)、图像描绘装置、微型泵、液滴喷出装置、微小混合装置、微小搅拌装置、微小反应装置等的各种压电执行器(压电器件),及用于检测流体特性、声压、微小重量、加速度等的各种压电传感器(压电器件)中。
Claims (6)
1.一种压电元件的制造方法,其为制造具备薄板状的烧成压电体和在所述烧成压电体的两面上形成的膜状电极的压电元件的方法,其中,该制造方法具有如下过程:在相对于极化方向垂直的方向上,在至少两个部位约束所述烧成压电体,并将所述烧成压电体极化。
2.如权利要求1所述的压电元件的制造方法,其中,约束所述薄板状的烧成压电体的部位是所述烧成压电体的长度方向的两端。
3.如权利要求1或2所述的压电元件的制造方法,其中,在约束所述薄板状的烧成压电体的部位,从多个方向把持烧成压电体,从而约束所述烧成压电体。
4.如权利要求1~3中任一项所述的压电元件的制造方法,其中,在极化后切断约束所述薄板状的烧成压电体的部位。
5.如权利要求4所述的压电元件的制造方法,其中,所述切断方法为选自电子射线、离子束、刻蚀、喷砂加工、激光加工中的任一方法。
6.一种烧成压电体的极化方法,其中,在相对于极化方向垂直的方向上,在至少两个部位约束薄板状的烧成压电体,并将所述烧成压电体极化。
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CN109427958A (zh) * | 2017-09-05 | 2019-03-05 | 王开安 | 薄膜极化承载组件及薄膜极化设备 |
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Also Published As
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US9246081B2 (en) | 2016-01-26 |
JP2012104715A (ja) | 2012-05-31 |
JP5676216B2 (ja) | 2015-02-25 |
US20120117769A1 (en) | 2012-05-17 |
CN102468423B (zh) | 2015-09-30 |
EP2453495A2 (en) | 2012-05-16 |
EP2453495A3 (en) | 2014-01-22 |
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