CN102468393B - 发光器件 - Google Patents

发光器件 Download PDF

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Publication number
CN102468393B
CN102468393B CN201110342594.0A CN201110342594A CN102468393B CN 102468393 B CN102468393 B CN 102468393B CN 201110342594 A CN201110342594 A CN 201110342594A CN 102468393 B CN102468393 B CN 102468393B
Authority
CN
China
Prior art keywords
layer
semiconductor layer
light emitting
protective layer
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201110342594.0A
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English (en)
Chinese (zh)
Other versions
CN102468393A (zh
Inventor
丁焕熙
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jingcan Optoelectronics Guangdong Co ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of CN102468393A publication Critical patent/CN102468393A/zh
Application granted granted Critical
Publication of CN102468393B publication Critical patent/CN102468393B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
  • Planar Illumination Modules (AREA)
CN201110342594.0A 2010-10-29 2011-10-28 发光器件 Active CN102468393B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2010-0107139 2010-10-29
KR1020100107139A KR101694175B1 (ko) 2010-10-29 2010-10-29 발광소자, 발광소자 패키지 및 조명시스템

Publications (2)

Publication Number Publication Date
CN102468393A CN102468393A (zh) 2012-05-23
CN102468393B true CN102468393B (zh) 2016-05-11

Family

ID=44862667

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201110342594.0A Active CN102468393B (zh) 2010-10-29 2011-10-28 发光器件

Country Status (6)

Country Link
US (1) US8575638B2 (https=)
EP (1) EP2448018B1 (https=)
JP (1) JP5947520B2 (https=)
KR (1) KR101694175B1 (https=)
CN (1) CN102468393B (https=)
TW (1) TWI511334B (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3214646B2 (ja) 1994-03-07 2001-10-02 東レ株式会社 プリフォームおよびその製造方法
JP6068091B2 (ja) * 2012-10-24 2017-01-25 スタンレー電気株式会社 発光素子
KR102103421B1 (ko) * 2013-02-07 2020-04-23 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
US10295124B2 (en) * 2013-02-27 2019-05-21 Cree, Inc. Light emitter packages and methods
TWI559574B (zh) * 2014-08-29 2016-11-21 聯勝光電股份有限公司 半導體發光元件及其製造方法
CN104347775B (zh) * 2014-09-28 2017-10-17 映瑞光电科技(上海)有限公司 具有图形化n电极的led芯片
CN110534659B (zh) * 2018-05-23 2022-09-27 昆明申北科技有限公司 顶发光oled的阳极结构、显示装置及其制造方法
EP3787028B1 (en) * 2019-08-26 2023-03-08 Lumileds LLC Lighting device
CN115274965A (zh) * 2021-04-30 2022-11-01 中国科学院苏州纳米技术与纳米仿生研究所 一种光电器件的阳极结构及其制备方法与应用

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101814567A (zh) * 2009-02-23 2010-08-25 Lg伊诺特有限公司 半导体发光器件

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003046119A (ja) * 2001-07-26 2003-02-14 Hitachi Cable Ltd 発光ダイオード及びその製造方法
JP2005277372A (ja) * 2004-02-25 2005-10-06 Sanken Electric Co Ltd 半導体発光素子及びその製造方法
KR100721147B1 (ko) * 2005-11-23 2007-05-22 삼성전기주식회사 수직구조 질화갈륨계 발광다이오드 소자
JP5211887B2 (ja) * 2007-07-03 2013-06-12 日亜化学工業株式会社 半導体発光素子およびその製造方法
KR100975659B1 (ko) * 2007-12-18 2010-08-17 포항공과대학교 산학협력단 발광 소자 및 그 제조 방법
WO2009078574A1 (en) * 2007-12-18 2009-06-25 Seoul Opto Device Co., Ltd. Light emitting device and method of manufacturing the same
DE102009025015A1 (de) * 2008-07-08 2010-02-18 Seoul Opto Device Co. Ltd., Ansan Lichtemittierende Vorrichtung und Verfahren zu ihrer Herstellung
KR100986963B1 (ko) * 2008-07-08 2010-10-11 서울옵토디바이스주식회사 발광 소자 및 그 제조방법
KR100992776B1 (ko) * 2008-11-14 2010-11-05 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR100974776B1 (ko) * 2009-02-10 2010-08-06 엘지이노텍 주식회사 발광 소자
KR101040012B1 (ko) * 2009-03-16 2011-06-08 엘지이노텍 주식회사 반도체 소자 제조방법
KR20100107139A (ko) 2009-03-25 2010-10-05 김경희 향 필터가 설치된 공기 정화 장치

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101814567A (zh) * 2009-02-23 2010-08-25 Lg伊诺特有限公司 半导体发光器件

Also Published As

Publication number Publication date
EP2448018A2 (en) 2012-05-02
US20120049230A1 (en) 2012-03-01
EP2448018A3 (en) 2014-05-07
KR101694175B1 (ko) 2017-01-17
TWI511334B (zh) 2015-12-01
KR20120045533A (ko) 2012-05-09
CN102468393A (zh) 2012-05-23
EP2448018B1 (en) 2017-08-16
US8575638B2 (en) 2013-11-05
TW201232834A (en) 2012-08-01
JP2012099815A (ja) 2012-05-24
JP5947520B2 (ja) 2016-07-06

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Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20210816

Address after: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Leyu Semiconductor Co.,Ltd.

Address before: Seoul, South Kerean

Patentee before: LG INNOTEK Co.,Ltd.

TR01 Transfer of patent right
CP03 Change of name, title or address

Address after: 215499 No. 168, Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Liyu Semiconductor Co.,Ltd.

Country or region after: China

Address before: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee before: Suzhou Leyu Semiconductor Co.,Ltd.

Country or region before: China

CP03 Change of name, title or address
TR01 Transfer of patent right

Effective date of registration: 20250331

Address after: Office 1501, No. 58 Huajin Street, Hengqin New District, Zhuhai City, Guangdong Province 519031

Patentee after: Jingcan Optoelectronics (Guangdong) Co.,Ltd.

Country or region after: China

Address before: 215499 No. 168, Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee before: Suzhou Liyu Semiconductor Co.,Ltd.

Country or region before: China

TR01 Transfer of patent right