CN102456830A - 具有垂直各向异性和增强层的磁性隧穿结单元 - Google Patents

具有垂直各向异性和增强层的磁性隧穿结单元 Download PDF

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Publication number
CN102456830A
CN102456830A CN2011103525794A CN201110352579A CN102456830A CN 102456830 A CN102456830 A CN 102456830A CN 2011103525794 A CN2011103525794 A CN 2011103525794A CN 201110352579 A CN201110352579 A CN 201110352579A CN 102456830 A CN102456830 A CN 102456830A
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China
Prior art keywords
layer
ferromagnetic
tunnel junction
magnetic tunnel
enhancement
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Pending
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CN2011103525794A
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English (en)
Chinese (zh)
Inventor
丁元俊
Y·郑
Z·高
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Seagate Technology LLC
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Seagate Technology LLC
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Publication of CN102456830A publication Critical patent/CN102456830A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3295—Spin-exchange coupled multilayers wherein the magnetic pinned or free layers are laminated without anti-parallel coupling within the pinned and free layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
CN2011103525794A 2010-11-01 2011-11-01 具有垂直各向异性和增强层的磁性隧穿结单元 Pending CN102456830A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/916,738 US20120104522A1 (en) 2010-11-01 2010-11-01 Magnetic tunnel junction cells having perpendicular anisotropy and enhancement layer
US12/916,738 2010-11-01

Publications (1)

Publication Number Publication Date
CN102456830A true CN102456830A (zh) 2012-05-16

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CN2011103525794A Pending CN102456830A (zh) 2010-11-01 2011-11-01 具有垂直各向异性和增强层的磁性隧穿结单元

Country Status (4)

Country Link
US (1) US20120104522A1 (enExample)
JP (1) JP2012099816A (enExample)
KR (1) KR20120046085A (enExample)
CN (1) CN102456830A (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103887424A (zh) * 2012-12-20 2014-06-25 三星电子株式会社 磁性结及其提供方法以及磁存储器
CN104584250A (zh) * 2012-09-26 2015-04-29 英特尔公司 包括磁各向异性增强层和结晶阻碍层的垂直mtj堆叠体
CN109427962A (zh) * 2017-08-28 2019-03-05 三星电子株式会社 磁性结及提供所述磁性结的方法和磁性存储器
CN110192288A (zh) * 2016-12-28 2019-08-30 英特尔公司 垂直自旋转移矩磁机构
CN111261772A (zh) * 2020-02-10 2020-06-09 北京航空航天大学 磁隧道结及其形成方法、磁存储器
CN111615756A (zh) * 2018-01-26 2020-09-01 台湾积体电路制造股份有限公司 自旋力矩转移（stt）-磁性随机存取存储器（mram）之氮化物盖层
CN111971569A (zh) * 2018-02-19 2020-11-20 布鲁克法国股份公司 多孔基质中的核自旋超极化
WO2021056483A1 (zh) * 2019-09-27 2021-04-01 华为技术有限公司 一种mtj单元、vcma驱动方法及mram

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JP2012238631A (ja) * 2011-05-10 2012-12-06 Sony Corp 記憶素子、記憶装置
US9214624B2 (en) 2012-07-27 2015-12-15 Qualcomm Incorporated Amorphous spacerlattice spacer for perpendicular MTJs
US9461242B2 (en) 2013-09-13 2016-10-04 Micron Technology, Inc. Magnetic memory cells, methods of fabrication, semiconductor devices, memory systems, and electronic systems
US9608197B2 (en) 2013-09-18 2017-03-28 Micron Technology, Inc. Memory cells, methods of fabrication, and semiconductor devices
US9306155B2 (en) * 2013-11-11 2016-04-05 Samsung Electronics Co., Ltd. Method and system for providing a bulk perpendicular magnetic anisotropy free layer in a perpendicular magnetic junction usable in spin transfer torque magnetic random access memory applications
US9281466B2 (en) 2014-04-09 2016-03-08 Micron Technology, Inc. Memory cells, semiconductor structures, semiconductor devices, and methods of fabrication
KR101695468B1 (ko) * 2014-07-09 2017-01-13 한국과학기술원 트랜지스터와 결합하여 직접화한 고출력 스핀발진기
US9007725B1 (en) 2014-10-07 2015-04-14 Western Digital (Fremont), Llc Sensor with positive coupling between dual ferromagnetic free layer laminates
US9349945B2 (en) 2014-10-16 2016-05-24 Micron Technology, Inc. Memory cells, semiconductor devices, and methods of fabrication
US10439131B2 (en) 2015-01-15 2019-10-08 Micron Technology, Inc. Methods of forming semiconductor devices including tunnel barrier materials
KR102566954B1 (ko) 2016-08-04 2023-08-16 삼성전자주식회사 자기 메모리 소자 및 그 제조 방법
EP4362626A1 (en) * 2022-10-31 2024-05-01 Commissariat à l'énergie atomique et aux énergies alternatives Magnetic device and corresponding method

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CN1244017A (zh) * 1998-08-05 2000-02-09 国际商业机器公司 非易失性磁存储单元和器件
US20070096229A1 (en) * 2005-10-28 2007-05-03 Masatoshi Yoshikawa Magnetoresistive element and magnetic memory device
US20100096716A1 (en) * 2007-02-12 2010-04-22 Yadav Technology Inc. Spin-transfer torque magnetic random access memory having magnetic tunnel junction with perpendicular magnetic anisotropy
CN101730913A (zh) * 2007-02-12 2010-06-09 亚达夫科技有限公司 具有渐变层的非易失性磁存储元件
US20100271870A1 (en) * 2009-04-28 2010-10-28 Seagate Technology Llc Magnetic stack having assist layer

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WO2008102499A1 (ja) * 2007-02-23 2008-08-28 Nec Corporation 磁性体装置及び磁気ランダムアクセスメモリ
JP4738395B2 (ja) * 2007-09-25 2011-08-03 株式会社東芝 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ
JP2011175987A (ja) * 2008-05-09 2011-09-08 Fuji Electric Co Ltd スピンバルブ素子および記憶装置
JP2011138954A (ja) * 2009-12-28 2011-07-14 Canon Anelva Corp 強磁性層の垂直磁化を用いた磁気トンネル接合デバイスの製造方法
US8374048B2 (en) * 2010-08-11 2013-02-12 Grandis, Inc. Method and system for providing magnetic tunneling junction elements having a biaxial anisotropy

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CN1244017A (zh) * 1998-08-05 2000-02-09 国际商业机器公司 非易失性磁存储单元和器件
US20070096229A1 (en) * 2005-10-28 2007-05-03 Masatoshi Yoshikawa Magnetoresistive element and magnetic memory device
US20100096716A1 (en) * 2007-02-12 2010-04-22 Yadav Technology Inc. Spin-transfer torque magnetic random access memory having magnetic tunnel junction with perpendicular magnetic anisotropy
CN101730913A (zh) * 2007-02-12 2010-06-09 亚达夫科技有限公司 具有渐变层的非易失性磁存储元件
US20100271870A1 (en) * 2009-04-28 2010-10-28 Seagate Technology Llc Magnetic stack having assist layer

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104584250A (zh) * 2012-09-26 2015-04-29 英特尔公司 包括磁各向异性增强层和结晶阻碍层的垂直mtj堆叠体
US9548441B2 (en) 2012-09-26 2017-01-17 Intel Corporation Perpendicular MTJ stacks with magnetic anisotrophy enhancing layer and crystallization barrier layer
CN104584250B (zh) * 2012-09-26 2017-07-18 英特尔公司 包括磁各向异性增强层和结晶阻碍层的垂直mtj堆叠体
CN103887424A (zh) * 2012-12-20 2014-06-25 三星电子株式会社 磁性结及其提供方法以及磁存储器
CN103887424B (zh) * 2012-12-20 2018-04-17 三星电子株式会社 磁性结及其提供方法以及磁存储器
CN110192288B (zh) * 2016-12-28 2023-04-25 英特尔公司 垂直自旋转移矩磁机构
CN110192288A (zh) * 2016-12-28 2019-08-30 英特尔公司 垂直自旋转移矩磁机构
CN109427962B (zh) * 2017-08-28 2021-09-03 三星电子株式会社 磁性结及提供所述磁性结的方法和磁性存储器
CN109427962A (zh) * 2017-08-28 2019-03-05 三星电子株式会社 磁性结及提供所述磁性结的方法和磁性存储器
CN111615756A (zh) * 2018-01-26 2020-09-01 台湾积体电路制造股份有限公司 自旋力矩转移（stt）-磁性随机存取存储器（mram）之氮化物盖层
US11849646B2 (en) 2018-01-26 2023-12-19 Taiwan Semiconductor Manufacturing Company, Ltd. Nitride capping layer for spin torque transfer (STT) magnetoresistive random access memory (MRAM)
CN111615756B (zh) * 2018-01-26 2024-02-06 台湾积体电路制造股份有限公司 自旋力矩转移（stt）-磁性随机存取存储器（mram）之氮化物盖层
CN111971569A (zh) * 2018-02-19 2020-11-20 布鲁克法国股份公司 多孔基质中的核自旋超极化
WO2021056483A1 (zh) * 2019-09-27 2021-04-01 华为技术有限公司 一种mtj单元、vcma驱动方法及mram
WO2021159568A1 (zh) * 2020-02-10 2021-08-19 北京航空航天大学 磁隧道结及其形成方法、磁存储器
CN111261772A (zh) * 2020-02-10 2020-06-09 北京航空航天大学 磁隧道结及其形成方法、磁存储器

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KR20120046085A (ko) 2012-05-09
JP2012099816A (ja) 2012-05-24

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Application publication date: 20120516