CN102449803A - Organic light-emitting diode - Google Patents
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
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- H10K2102/301—Details of OLEDs
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Abstract
In at least one embodiment of the organic light-emitting diode (10), the organic light-emitting diode comprises a first electrode (1), which is composed of a metal, and a second electrode (2). Furthermore, the organic light-emitting diode (10) contains a sequence (3) of organic layers that is located between the first (1) and the second electrode (2). In addition, the organic light-emitting diode (10) comprises an index layer (4) that is transparent to radiation and that is located on an outer face (11) of the first electrode (1) facing away from the sequence (3) of organic layers. An average index of refraction of the index layer (4) is greater than or equal to an average index of refraction of the sequence (3) of organic layers. At least part of the electromagnetic plasmon radiation (P) produced by the organic light-emitting diode (10) passes through the index layer (4).
Description
A kind of Organic Light Emitting Diode has been proposed.
The task that will solve is, proposes a kind of Organic Light Emitting Diode (abbreviation OLED), and wherein light can coupling output from the plasma pattern of metal electrode effectively.
According at least one form of implementation of Organic Light Emitting Diode, this Organic Light Emitting Diode comprises first electrode, and it forms by metal.For example, first electrode is made up of silver, aluminium, cadmium, barium, indium, magnesium, calcium, lithium and/or gold.So first electrode especially makes up by electric conducting material, this material also is lighttight under the situation of thin layer.In other words, first electrode is preferably by following material construction: when 1/4 thickness with the vacuum wavelength of the radiation in the limit of visible spectrum existed, this material was a transmissive not for this radiation.
According at least one form of implementation of Organic Light Emitting Diode, it comprises at least one the organic layer sequence that has at least one active layer.Active layer is designed for the generation electromagnetic radiation at this.Active layer for example based on organic polymer, organic oligomer, organic monomer, organically, the micromolecule of non-polymer or based on its combination.The organic layer sequence can have other organic layer sequence, and it for example is configured to carrier injection layer, carrier blocking layers and/or charge carrier and stops layer.
According at least one form of implementation of Organic Light Emitting Diode, it has second electrode.Preferably, second electrode plane and/or flatly make up as first electrode.The plane can mean that electrode covers at least 80% perhaps covering fully with the interarea of organic layer sequence on the side that deviates from each other, and perhaps the ratio of the horizontal expansion of electrode and thickness is at least 1000.
According at least one form of implementation of Organic Light Emitting Diode, the organic layer sequence is between first electrode and second electrode.The organic layer sequence can be fully or partly between electrode at this.
According at least one form of implementation of Organic Light Emitting Diode, it comprises the refracting layer (Indexschicht) of radiation transmission.So refracting layer is translucent ground or preferably clear ground or structure limpidly in the subregion of limit of visible spectrum at least.In addition preferably, refracting layer makes up by dielectric material.Refracting layer this can be by uniformly, for example crystalline material forms, perhaps also form through at least a ultra material.If refracting layer has crystalline material, then suitable material for example is LiNbO
3, ZnS, ZnSe or TeO
2Likewise, organic material can be used for refracting layer like the C60 with refractive index of about 2.2 or use at refracting layer.Suitable ultra material for example is TiO
2, it is embedded in the host material.Suitable host material for example is polymer, especially epoxides, silicones and epoxides-silicones-composite material.
According at least one form of implementation of Organic Light Emitting Diode, refracting layer is applied on the outside that deviates from the organic layer sequence of first electrode.In other words, first electrode that between refracting layer and organic layer sequence, has metal.
According at least one form of implementation of Organic Light Emitting Diode, the average optical refractive index of refracting layer is more than or equal to the average optical refractive index of organic layer sequence.At this; Mean refractive index means; Refractive index is asking average on total layer thickness of organic layer sequence or on the refracting layer, wherein refracting layer near the layer of first electrode because the exponential damping of the plasma pattern on the direction of leaving first electrode is understood quilt weighting more doughtily.Mean refractive index also can be the effective refractive index of equivalent layer.If for example the mean refractive index of organic layer sequence and/or effective refractive index are 1.8, then average the and/or effective refractive index of refracting layer is at least 1.8 equally.
According at least one form of implementation of Organic Light Emitting Diode, it has front side and rear side.Rear side perhaps forms through refracting layer towards refracting layer at this, and the front side is towards the organic layer sequence.That is to say that refracting layer exists at least in part, and the organic layer sequence exists at least in part between front side and refracting layer between rear side and organic layer sequence.The radiation that in light-emitting diode, produces in the front side and/or rear side leave Organic Light Emitting Diode.Preferably, radiation is at least in the front side and preferably additionally leave light-emitting diode at rear side.Light-emitting diode transverse to the side of front side on preferred not emitted radiation part or do not launch main radiant section.
According at least one form of implementation of Organic Light Emitting Diode, at least a portion of the electromagnetism plasma radiation that is produced by Organic Light Emitting Diode is passed refracting layer.Plasma radiation is the radiation from the surface plasma generation of at least the first electrode at this.
In at least one form of implementation of Organic Light Emitting Diode, it comprises first electrode and second electrode that forms with metal.In addition, Organic Light Emitting Diode comprises organic sequence of layer, and it has at least one active layer, and wherein the organic layer sequence is between first electrode and second electrode.In addition, Organic Light Emitting Diode has the refracting layer that radiation can be passed, and it is positioned at the outside that deviates from the organic layer sequence of first electrode.The mean refractive index of refracting layer is in this mean refractive index more than or equal to the organic layer sequence.In addition, Organic Light Emitting Diode has front side and rear side, and wherein rear side is towards refracting layer, and the front side is towards the organic layer sequence, and the radiation that in light-emitting diode, produces is launched in the front side and/or at rear side.At least a portion of the electromagnetism plasma radiation that is produced by Organic Light Emitting Diode is passed refracting layer.
According at least one form of implementation, first electrode contacts with the organic layer sequence and with the refracting layer direct physical.In other words, first electrode first electrode transverse to the direction of principal spread direction on fully or partly limited and surround by refracting layer and organic layer sequence.
According at least one form of implementation of Organic Light Emitting Diode, through the electromagnetic radiation that in active layer, produces drive surface plasma on the interface between first electrode and the organic layer sequence at least.Through these surface plasmas, plasma radiation produces agley or partly.
The active layer that produces radiation that is designed for of organic layer sequence has molecule usually, and it is similar in the state of Electron Excitation and shows electric dipole moment, and wherein molecule need not to show dipole moment in the electronics basic status.In addition, on the interface between first electrode of organic layer sequence and metal, there is the electromagnet interference pattern.Through near-field effect and/or surface roughness, the interface model that is also referred to as the surface plasma pattern can be coupled to the molecule of organic layer sequence or vice versa.On the light summation that generates on the active layer, measure, the order of magnitude of the size that on the surface plasma pattern, is coupled can be about 30%.In other words, the tangible power section of Organic Light Emitting Diode is excessively in surface plasma.
Do not have such as under the situation of Organic Light Emitting Diode of the refracting layer that makes up of description ground, in the power section that is coupled on the surface plasma, especially lose and also cannot convert light into through the decay of surface plasma pattern in the metal of first electrode.Through the refracting layer on the side that deviates from the organic layer sequence of first electrode, can satisfy energy acquisition and pulse and obtain, be used for converting surface plasma into electromagnetic radiation.So what can realize is that surface plasma converts electromagnetic radiation in the outside of first electrode at least in part.
So this radiation, the plasma radiation that produces by the surface plasma of first electrode pass at least in part refracting layer and for example at the rear side (it for example forms through refracting layer) of Organic Light Emitting Diode from the Organic Light Emitting Diode outgoing.Through will improving the usefulness and the efficient of Organic Light Emitting Diode at the conversion of the surface plasma in first electrode telegram in reply magnetic radiation.
According at least one form of implementation of Organic Light Emitting Diode, refracting layer has at least 50nm, 100nm or the average geometric thickness of 200nm at least especially at least.Preferably, the average geometric thickness of refracting layer surpasses at least 300nm, 500nm especially at least.So refracting layer has thickness, this thickness is at least corresponding to the order of magnitude of the wavelength of the electromagnetic radiation in refracting layer.
According at least one form of implementation of Organic Light Emitting Diode, first metal electrode has at 15nm to the thickness that (comprises end value) between the 65nm, preferably at 25nm to the thickness that (comprises end value) between the 50nm.Under the situation of thickness in given scope of first electrode, first electrode to a great extent can not transmitted radiation.That is to say that the unimportant part of the radiation that in active layer, produces can directly be passed first electrode and do not had reflection, absorbs or convert into surface plasma.On the other hand, the thickness of first electrode in illustrated scope is enough little, so that guarantee the outside that towards the inboard of organic layer sequence effectively transfer to first electrode of surface plasma from first electrode.In the illustrated thickness range of first electrode, so the generation of plasma radiation is effective especially.
According at least one form of implementation of Organic Light Emitting Diode, at the average distance between first electrode and the active layer at 15nm to (comprising end value) between the 100nm, preferably at 25nm to (comprising end value) between the 50nm.In order to be decreased to the coupling of surface plasma, in the Organic Light Emitting Diode of the refracting layer that does not have as illustrated, to make up, the distance between first electrode and active layer be chosen as usually big as far as possible.At this, mean that as far as possible greatly this distance for example surpasses 100nm.Because can realize converting surface plasma into plasma radiation, so can reduce at the active layer and first distance between electrodes through refracting layer.
According at least one form of implementation of Organic Light Emitting Diode, the average distance between first electrode and active layer is 25nm to the maximum, especially maximum 15nm.Through this little distance between the active layer and first electrode, the coupling of the surface plasma pattern of radiation to the first electrode that can guarantee in active layer, to produce is effective especially.In other words, the king-sized part of the power absorption of Organic Light Emitting Diode is converted into the surface plasma at least the first electrode.
According at least one form of implementation of Organic Light Emitting Diode, the average geometric gross thickness of organic layer sequence is less than or equal to 150nm, preferably is less than or equal to 90nm.This little gross thickness of organic layer sequence can realize through surface plasma is reverted to plasma radiation, makes because the drive surface plasma, and the gross efficiency of light-emitting diode does not reduce or and the usefulness of not obvious reduction light-emitting diode.
Through the little layer thickness of organic layer sequence, improved the electrology characteristic of Organic Light Emitting Diode in addition.So, on the organic layer sequence because its little thickness little voltage that also only lands.In addition, also can reduce for producing the required material use of organic layer sequence.In addition, the organic layer sequence no longer or than much less ground under traditional light-emitting diode situation is used as ducting layer.If the organic layer sequence is not as ducting layer or reduce ground as ducting layer, then can improve the coupling delivery efficiency of the radiation that is produced.
According at least one form of implementation of Organic Light Emitting Diode, the radiation that is produced by light-emitting diode is at least 5% of the mean radiation intensity of the front side of light-emitting diode in the mean radiation intensity of the rear side of light-emitting diode, especially at least 15%.In other words, launch at rear side, promptly launch in the side that deviates from the organic layer sequence of light-emitting diode by the major part of light-emitting diode radiation emitted power.
According at least one form of implementation of Organic Light Emitting Diode, having in the mean radiation intensity of rear side under 25 percentage points the situation of tolerance corresponding to mean radiation intensity in the front side.Preferably, tolerance is up to 10 percentage points, especially mean radiation intensity at rear side with identical in the scope of front side in manufacturing tolerance.Ratio in the emissive porwer of front side and rear side for example can be regulated through the active layer and first distance between electrodes; Promptly between the degree of coupling to the surface plasma pattern, regulate, and the thickness and/or the transparency of first electrode through metal are regulated.So, can realize having the especially just Organic Light Emitting Diode of what a metal electrode, its ground, both sides, promptly luminous identically with rear side in the front side.
According at least one form of implementation of Organic Light Emitting Diode, the mean refractive index of refracting layer is at least 1.1 times of mean refractive index of organic layer sequence.Preferably, the mean refractive index of refracting layer is at least 1.2 times, especially at least 1.3 times of mean refractive index of organic layer sequence.Through bigger refringence, can guarantee from surface plasma, to generate effectively plasma radiation.
According at least one form of implementation of Organic Light Emitting Diode, refracting layer is formed by the layer that alternately is provided with, and the layer that wherein alternately is provided with has the material different component respectively.The layer that alternately is provided with for example can alternately show than higher refractive index and lower refractive index.
According at least one form of implementation of Organic Light Emitting Diode, the making up one of at least of the layer that is arranged alternately with transparent metal oxide.For example, refracting layer is by ZnO layer and TiO layer and/or SrTiO
3The sequence that replaces of layer forms.These layers are for example made through ald (English atomic layer deposition, ALD perhaps abridges) respectively.The refracting layer that makes up like this has high refractive index and high transparency, and is suitable in addition Organic Light Emitting Diode is sealed like acid and moisture with respect to external action.
According at least one form of implementation of Organic Light Emitting Diode, its rear side forms through refracting layer.That is to say, directly come out at rear side from refracting layer from the optical coupling output of Organic Light Emitting Diode.
According at least one form of implementation of Organic Light Emitting Diode, refracting layer has structuring portion, is used to improve the radiation coupling output of plasma radiation.Structuring portion can make up regularly or irregularly.For example, structuring portion can perhaps produce through statistical roughening process, for example grinding or sandblast through the etching by etching mask.
According at least one form of implementation of Organic Light Emitting Diode, refracting layer adds has disperser.Disperser for example forms through scattering particles.In other words, at least a portion of plasma radiation or plasma radiation is not to pass refracting layer point-blank, experiences at least one direction change but pass through disperser, especially causes through reflection and/or scattering.Through using disperser, especially combine the structuring portion of refracting layer, can realize high optical coupling delivery efficiency about plasma radiation.
According at least one form of implementation of Organic Light Emitting Diode, refracting layer comprises conversion equipment.At this, conversion equipment is designed at least a portion that absorbs plasma radiation, and converts the radiation with bigger wavelength into.Through conversion equipment, also can change the spatial emission characteristic of light-emitting diode on rear side, make up especially equably.Conversion equipment also can combine scattering device and combine the structuring portion of refracting layer to use.
According at least one form of implementation of Organic Light Emitting Diode, first electrode and second electrode all form by metal.So two electrodes all are metal electrodes.For example, Organic Light Emitting Diode is configured to so-called micro-resonator OLED.Through first electrode and second electrode, so for example form a kind of resonator.
According at least one form of implementation of Organic Light Emitting Diode, wherein especially first electrode and second electrode all form by metal, and two electrodes have the thickness of the highest 30nm, the thickness of the highest 15nm especially.In other words, two electrodes are transparent for the visible radiation that produces in the active layer partly owing to little thickness.
According at least one form of implementation of Organic Light Emitting Diode, second electrode forms by transparent conductive oxide.Preferably, so the thickness of second electrode surpasses 100nm, especially 200nm.Preferably, the thickness of second electrode at 100nm between the 140nm, comprising end value.For example, second electrode forms by indium oxide, tin indium oxide, indium zinc oxide, zinc oxide or tin oxide.Likewise, can use the material of the zinc oxide (abbreviation AZO) of Al doping as second electrode.
According at least one form of implementation of Organic Light Emitting Diode, at least the first electrode is along at least one principal spread direction, preferably have varied in thickness along two principal spread directions.In other words, the thickness of first electrode for example periodically or Distribution Statistics ground distribute along the principal spread direction of two quadratures.
According at least one form of implementation of Organic Light Emitting Diode, the supporting mass of light-emitting diode has structuring at master.So on this master of supporting mass, be applied with first electrode and second electrode and organic layer sequence and refracting layer, preferably have respectively through whole master constant thickness in the scope of manufacturing tolerance.
According at least one form of implementation of Organic Light Emitting Diode, the length range of varied in thickness and/or structuring portion at 300nm between the 1.5 μ m, preferably at 400nm between the 1.0 μ m, comprising end value.At this, varied in thickness can be uniformly or periodic the variation, and it for example carries out to sinusoid or stairstepping ground carries out, and periodicity corresponding to length range illustrate.Same possible be, varied in thickness is implemented with the form in the hole in first electrode, and these holes are provided with the distance of rule each other.Also possible is, length range is average length range, and varied in thickness is irregular or at random along principal spread direction.
According at least one form of implementation of Organic Light Emitting Diode, on the side that deviates from first electrode of refracting layer, mirror is arranged, its structure is used for plasma radiation is reflected towards the organic layer sequence.Through using this mirror, possible is that whole radiation that Organic Light Emitting Diode produces are exported from the Organic Light Emitting Diode coupling through the front side.Under the situation of using this mirror, refracting layer preferably has disperser and/or structuring portion.
According at least one form of implementation of Organic Light Emitting Diode, mirror is the part of refracting layer.For example, so mirror forms bragg mirror and the mirror layer is the part layer of refracting layer simultaneously.Thus, can realize the effective encapsulation and/or the compact structure of Organic Light Emitting Diode.
Further set forth described Organic Light Emitting Diode here by embodiment below with reference to accompanying drawings.At this, components identical is provided with identical reference marker among each figure.Yet in this and the not shown relation that conforms with ratio.Or rather, each element can be illustrated in order better to understand large.
Wherein:
Fig. 1 to 12 shows the schematic cross sectional views of the embodiment of described Organic Light Emitting Diode here,
Figure 13 shows the schematic cross sectional views of key diagram, and
Figure 14 shows the sketch map of the dispersion relation of surface plasma.
An embodiment of Organic Light Emitting Diode 10 has been shown in Fig. 1.Light-emitting diode 10 has organic layer sequence 3, and it has active layer 33.In the work of light-emitting diode 10, in active layer 33, produce electromagnetic radiation R.The gross thickness H of organic layer sequence 33 for example is maximum 300nm, especially maximum 90nm.Existence second electrode 2 on the side of supporting mass 7 at sequence of layer 3.Second electrode 2 for example makes up with transparent conductive oxide.Through second electrode 2 and supporting mass 7, at least a portion of the radiation R that in active layer 33, produces is launched on the front side 6 of light-emitting diode 10.
Have first electrode 1 on the side that deviates from supporting mass 7 of organic layer sequence 3, it is by metal, for example form by silver.Produce through the radiation in active layer 33, drive surface plasma on the interface between first electrode 1 and the active layer sequence 3+,-.These surface plasmas+,-outside that deviates from organic layer sequence 3 11 of first electrode 1 can be arrived.In order to realize this point effectively, the thickness D of first electrode 11 preferably at 25nm between the 50nm, comprising end value.
On the outside 11 of first electrode 1, directly apply refracting layer 4 contiguously with first electrode 1.The mean refractive index of refracting layer 4 is at least the mean refractive index of organic layer sequence 3 or is preferably greater than mean refractive index at this.Through refracting layer 4, also form the rear side 5 of light-emitting diode 10.
Mean refractive index through refracting layer 4 is greater than the mean refractive index of organic layer sequence 3, and what can realize is, surface plasma+,-in first electrode 1, be converted into plasma radiation P1, P2, P3.Plasma radiation P1, P2, P3 pass refracting layer 4 at least in part and are launched on rear side 5 by light-emitting diode 10.The thickness D of refracting layer 4 is preferably 200nm at least at this.
Be based on surface plasma+,-pulse acquisition and energy to the conversion of plasma radiation P1, P2, P3 obtain, the emission of plasma radiation P1, P2, P3 is carried out about wavelength aspect and angle relatively.So the wavelength of plasma radiation P1 is less than the wavelength of plasma radiation P2, it is again less than the wavelength of plasma radiation P3.The wavelength of plasma radiation P1, P2, P3 is more little, and then wherein plasma radiation P1, P2, P3 are more little towards the angle that the principal spread direction of first electrode 1 passes refracting layer 4.
In the embodiment according to Fig. 2, refracting layer 4 is between the substrate 7 and first electrode 1.Rear side 5 forms through substrate 7, and front side 6 is through the outside that deviates from organic layer sequence 3 12 formation of second electrode 2.Plasma radiation P1, P2, P3 pass substrate 7 from light-emitting diode 10 emissions.
Be different from Fig. 1 or shown in Figure 2, substrate 7 can have alligatoring portion and be used for improving the coupling delivery efficiency.
According to Fig. 3, substrate 7 itself makes up refracting layer 4.So substrate 7 is by following material construction: it has at least the refractive index with the identical size of mean refractive index of organic layer sequence 3.Preferably, the refringence between organic layer sequence 3 and substrate 7 is at least 0.2 and perhaps is at least 0.3.For example, so the refractive index of substrate 7 is approximately 2.1, and the mean refractive index of organic layer sequence 3 is approximately 1.8, especially has to be respectively 0.1 or 0.05 tolerance.
Organic Light Emitting Diode 10 according to Fig. 4 is embodied as the micro-resonator light-emitting diode.First electrode 1 and second electrode 2 are formed by metal respectively, are for example formed by silver respectively.Yet preferably, electrode 1,2 has the metal that differs from one another or is made up of different metallic.There are refracting layer 4a, 4b on the outside 11 of first electrode 1 and on the outside 12 at second electrode 2.Randomly possible is that refracting layer 4a is a supporting mass 7 on first electrode 1 simultaneously.
Thickness D1, the D2 of first electrode 1 and second electrode 2 can regulate; Make to produce surface plasma and produce plasma radiation P1, P2, P3 thus, and the radiation R that directly in active layer 3, produces can pass at least in part electrode 1,2 one of at least.What can realize thus is as in according to the embodiment of Fig. 1 to 3, can realize the emissive porwer of size much at one on the front side 6 and on the rear side 5 at light-emitting diode 10.
According to the embodiment of Fig. 5, first electrode 1 has the varied in thickness of length range L along principal spread direction.At this, length range L is preferably in the order of magnitude of the vacuum wavelength of the plasma radiation P1 that is launched, P2, P3.For example, varied in thickness shows periodic, sine-shaped curve.
Randomly, refracting layer 4 also can be different from and shows varied in thickness shown in Fig. 5.Same possible be, be different from the view among Fig. 5, second electrode 2 has varied in thickness and goes out to send to see that from second electrode 2 the layer 3-5 of away from substrate 7 exists with constant thickness.The side towards organic layer sequence 3 of substrate 7 also can be by structuring, so wherein preferably, layer 2-5 in addition has constant thickness.
Varied in thickness through on the length range L of the wavelength of plasma radiation P1, P2, P3 can produce a kind of optics grid on first electrode 1.
Possible thus is the angle-dependence of the plasma radiation P1 that adjusting is launched, P2, P3.For example, the intensity of plasma radiation P2 surpasses the intensity of plasma radiation P1, P3.
For the graphic simplicity view, the also not shown radiation R that directly in active layer 33, produces in Fig. 5 and in figure subsequently.
According to Fig. 6, first electrode 1 has hole 9.Hole 9 for example passes completely through first electrode 1 and can produce through photoetching process.The diameter in hole 9 for example at 100nm between the 200nm, comprising end value.Through the hole 9 in first electrode 1, can produce a kind of optics grid equally and be used to be adjusted in the emission characteristics on the rear side 5.
In Fig. 7, illustrated, refracting layer 4 preferably has the coupling delivery efficiency that structuring portion 13 is used to improve plasma radiation P.
According to Fig. 8, refracting layer 4 comprises the disperser 14 of scattering particles form.Through scattering particles 14, plasma radiation P passes refracting layer at least in part, is not point-blank but on scattering particles, is deflected or reflects.Thus, can improve the coupling delivery efficiency of plasma radiation P equally from refracting layer 4.
In the embodiment according to Fig. 9, refracting layer 4 adds has conversion equipment 15.Through the particle of conversion equipment 15, at least a portion of plasma radiation P is absorbed and converts the secondary radiation S with bigger wavelength into.Through using conversion equipment 15, can the emission characteristics homogenizing of the radiation emitted P of institute, S promptly be made up more equably.Conversion equipment 15 can be chosen as the blueness and the green spectral that only for example make plasma radiation and partly convert secondary radiation S into, and for example the red part of plasma radiation P is launched on rear side 5 by conversion ground.
According to Figure 10, first electrode 1 shows stepped varied in thickness.Be that the different wave length for plasma radiation P1, P2, P3 on the different parts of first electrode 1 exists the different efficient that surface plasma converted into plasma radiation P1, P2, P3 through what varied in thickness can realize.Through the varied in thickness of first electrode 1, also need not first electrode 1 afterwards according to structured influence and the structure that is implemented in emission characteristic on the rear side 5 of optics grid mode.
In the embodiment according to Figure 11, the varied in thickness of first electrode 1 also changes non-steppedly, that kind shown in figure 10, but ramp type ground changes.As also among Figure 10, the periodicity of the varied in thickness that ramp type makes up is preferably greater than the wavelength of plasma radiation P1, P2, P3.
An embodiment of light-emitting diode 10 has been shown in Figure 12, wherein on the side that deviates from organic layer sequence 3 of refracting layer 4, has been applied with mirror 8.Through mirror 8, towards substrate 7 reflections, make plasma radiation P and the direct radiation R that in active layer 33, produces launch from light-emitting diode 10 plasma radiation P through front side 6.Preferably, refracting layer 4 has among Figure 12 and unshowned scattering device at this.Possible in addition is that mirror 8 forms the part of refracting layer 4.
So-called Kretschmann configuration has been shown in Figure 13.Glass prism 16 is applied on first electrode.On the side that deviates from glass prism 16 of first electrode 1, be applied with organic layer 3 in addition.The radiation Q that confirms wavelength incides in the glass prism 16.According to the incidence angle of radiation Q, the wavelength of radiation Q and the refractive index of glass prism 16 and organic layer 3, with the part of confirming of radiation Q convert into surface plasma+,-.Possiblely at this be, all radiation Q all convert into surface plasma+,-.Than Organic Light Emitting Diode 10, for example according to Fig. 1 to Figure 12, in the Kretschmann configuration, so have opposite situation, so radiation Q be converted into surface plasma+,-.
In Figure 14, schematically show surface plasma+,-dispersion relation.The wave vector k of shown here is m-1 is unit is that the wavelength X or the Hz of unit is the frequency f of unit with respect to nm.Radiation Q to surface plasma+,-conversion be possible to the curve on the left side more only about dispersion relation from the curve on the right more.
Curve a schematically shows airborne dispersion relation; It is the dispersion relation in 1.5 the medium that curve b shows having refractive index; Curve c shows the dispersion relation of the surface plasma on air-Yin interface; And curve d shows the dispersion relation of the surface plasma on silver-organic substance interface, and wherein organic substance has the thickness of about 30nm.
Opposite situation, promptly from surface plasma+,-convert into plasma radiation P after this have only when wherein converting surface plasma the refractive index of medium (being refracting layer 4) of plasma radiation P at this just possible when enough big.
Here described invention is not restricted through the description by embodiment.Or rather, the present invention includes the new arbitrarily characteristic and the combination in any of characteristic, especially comprise the combination in any of the characteristic in the claim, in claim or embodiment even this combination of this characteristic or characteristic itself is not explained clearly.
Present patent application requires the priority 10 2,009 023 352.0 and 10 2,009 037 185.0 of German patent application, and its disclosure is incorporated into this by reference.
Claims (15)
1. an Organic Light Emitting Diode (10) has:
-the first electrode (1), it forms by metal, and second electrode (2);
-have the organic layer sequence (3) of at least one active layer (33), wherein organic layer sequence (3) is positioned between first electrode (1) and second electrode (2);
The refracting layer that-radiation penetrates (4), it is positioned on the outside that deviates from organic layer sequence (3) (11) of first electrode (1), and the mean refractive index of refracting layer (4) is greater than or equal to the mean refractive index of organic layer sequence (3); And
-front side (6) and rear side (5), wherein rear side (5) towards refracting layer (4) and front side (6) towards organic layer sequence (3), and the radiation that in light-emitting diode (10), produces (P, R, S) in the front side (6) and/or launch at rear side (5);
At least a portion of the electromagnetism plasma radiation (P) that is wherein produced by Organic Light Emitting Diode (10) is passed refracting layer (4).
2. Organic Light Emitting Diode according to claim 1 (10); Wherein through in active layer (33) the generation electromagnetic radiation at least a portion at least in first electrode (1) the drive surface plasma (+;-), and produce plasma radiation (P) through these surface plasmas (+,-).
3. according to one of aforesaid right requirement described Organic Light Emitting Diode (10), wherein refracting layer (4) has the average geometric thickness (D) of 100nm at least.
4. according to one of aforesaid right requirement described Organic Light Emitting Diode (10), wherein first electrode (1) has at 25nm to the thickness between the 65nm (T), comprising end value.
5. according to one of aforesaid right requirement described Organic Light Emitting Diode (10); Wherein the average distance (A) between first electrode (1) and active layer (33) at 15nm between the 80nm; Comprising end value, and/or wherein the average geometric gross thickness (Z) of organic layer sequence (3) is up to 150nm.
6. according to one of aforesaid right requirement described Organic Light Emitting Diode (10); The radiation that wherein produces by light-emitting diode (10) (P, R) the mean radiation intensity on the rear side (5) of light-emitting diode (10) be on the front side (6) in light-emitting diode (10) mean radiation intensity at least 5%.
7. according to one of aforesaid right requirement described Organic Light Emitting Diode (10), wherein under 25 percentage points tolerance situation, equal the mean radiation intensity on front side (6) in the mean radiation intensity on the rear side (5).
8. one of require described Organic Light Emitting Diode (10) according to aforesaid right, wherein the mean refractive index of refracting layer (4) is at least 1.1 times of mean refractive index of organic layer sequence (3).
9. according to one of aforesaid right requirement described Organic Light Emitting Diode (10), wherein refracting layer (4) comprises at least two kinds of layers that are arranged alternately, and wherein the layer of at least a type makes up by transparent metal oxide.
10. according to one of aforesaid right requirement described Organic Light Emitting Diode (10), wherein rear side (5) forms through refracting layer (4), and wherein refracting layer (4) has the radiation coupling output that structuring portion (13) is used to improve plasma radiation (P).
11. according to one of aforesaid right requirement described Organic Light Emitting Diode (10), wherein refracting layer (4) comprises disperser (14) and/or conversion equipment (15).
12. according to one of aforesaid right requirement described Organic Light Emitting Diode (10), wherein first electrode (1) and second electrode (2) form by metal.
13. according to the described Organic Light Emitting Diode of one of claim 1 to 11 (10), wherein second electrode (2) forms by transparent conductive oxide.
14. according to one of aforesaid right requirement described Organic Light Emitting Diode (10), wherein first electrode (1) has varied in thickness along at least one principal spread direction, wherein the length range of varied in thickness (L) is at least 300nm and is 1.5 μ m to the maximum.
15. according to one of aforesaid right requirement described Organic Light Emitting Diode (10), wherein on the side that deviates from first electrode (1) of refracting layer (4), be mounted with mirror (8), it is designed for plasma radiation (P) is reflected towards organic layer sequence (3).
Applications Claiming Priority (5)
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| DE102009023352 | 2009-05-29 | ||
| DE102009023352.0 | 2009-05-29 | ||
| DE102009037185.0 | 2009-08-12 | ||
| DE102009037185.0A DE102009037185B4 (en) | 2009-05-29 | 2009-08-12 | Organic light emitting diode |
| PCT/EP2010/057346 WO2010136537A1 (en) | 2009-05-29 | 2010-05-27 | Organic light-emitting diode |
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| CN102449803A true CN102449803A (en) | 2012-05-09 |
| CN102449803B CN102449803B (en) | 2015-05-27 |
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| CN201080023423.5A Expired - Fee Related CN102449803B (en) | 2009-05-29 | 2010-05-27 | Organic light-emitting diode |
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| US (1) | US8618729B2 (en) |
| EP (1) | EP2436058B1 (en) |
| JP (1) | JP5479582B2 (en) |
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| CN (1) | CN102449803B (en) |
| DE (1) | DE102009037185B4 (en) |
| WO (1) | WO2010136537A1 (en) |
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Also Published As
| Publication number | Publication date |
|---|---|
| EP2436058A1 (en) | 2012-04-04 |
| WO2010136537A1 (en) | 2010-12-02 |
| US8618729B2 (en) | 2013-12-31 |
| US20120181920A1 (en) | 2012-07-19 |
| EP2436058B1 (en) | 2018-09-19 |
| CN102449803B (en) | 2015-05-27 |
| KR20120034681A (en) | 2012-04-12 |
| DE102009037185B4 (en) | 2018-11-22 |
| DE102009037185A1 (en) | 2010-12-02 |
| JP5479582B2 (en) | 2014-04-23 |
| JP2012528434A (en) | 2012-11-12 |
| KR101891208B1 (en) | 2018-08-24 |
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