CN103427032A - Organic light-emitting device and preparation method thereof - Google Patents
Organic light-emitting device and preparation method thereof Download PDFInfo
- Publication number
- CN103427032A CN103427032A CN201210147403XA CN201210147403A CN103427032A CN 103427032 A CN103427032 A CN 103427032A CN 201210147403X A CN201210147403X A CN 201210147403XA CN 201210147403 A CN201210147403 A CN 201210147403A CN 103427032 A CN103427032 A CN 103427032A
- Authority
- CN
- China
- Prior art keywords
- layer
- organic electroluminescence
- electroluminescence device
- scattering layer
- charcoal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
An embodiment of the invention discloses an organic light-emitting device. The organic light-emitting device sequentially comprises a glass substrate, a scattering layer, an anode conducting film, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer and a cathode. The scattering layer is made of a mixed material formed by polytetrafluoroethylene water solution doped with carbon aerogel, and the doping mass fraction of carbon aerogel in the scattering layer is 5-20%. In addition, the embodiment of the invention further discloses a preparation method of the organic light-emitting device. According to the organic light-emitting device, by enabling the glass substrate to be coated with the scattering layer, the refractive index gap between the glass substrate and the anode conducting film is effectively reduced, total reflection effect of light is weakened, the light out rate is improved, light loss on the side is avoided simultaneously, and luminous efficiency is enhanced.
Description
Technical field
The present invention relates to the electronic device association area, relate in particular to a kind of organic electroluminescence device and preparation method thereof.
Background technology
1987, the C.W.Tang of U.S. Eastman Kodak company and VanSlyke reported the breakthrough in organic electroluminescent research.Utilize the ultrathin film technology to prepare high brightness, high efficiency double-deck organic electroluminescence device (OLED).In this double-deck device, under 10V, brightness reaches 1000cd/m
2, its luminous efficiency is 1.51lm/W, life-span to be greater than 100 hours.
The principle of luminosity of OLED is based under the effect of extra electric field, and electronics is injected into organic lowest unocccupied molecular orbital (LUMO) from negative electrode, and hole is injected into organic highest occupied molecular orbital (HOMO) from anode.Electronics and hole meet at luminescent layer, compound, form exciton, exciton moves under electric field action, and energy is passed to luminescent material, and excitation electron is from the ground state transition to excitation state, excited energy, by Radiation-induced deactivation, produces photon, discharges luminous energy.
In traditional luminescent device, be all generally to take the ito glass substrate as exiting surface, in this structure, the outgoing meeting of light is first reflected through the absorption of ITO electric conducting material, carry out again subvitreous absorption and a reflection, finally just can shine in air, and because glass surface is more smooth, and thickness of glass is larger, light path is strengthened, thereby more light is reflected away toward the glass both sides, cause in glass the probability of the light that shines device to descend, finally affect luminous efficiency.Therefore, it is very low that light shines airborne exitance, and most light has all lost, and the luminous efficiency of this class luminescent device is all on the low side.
Summary of the invention
Embodiment of the present invention technical problem to be solved is, a kind of organic electroluminescence device and preparation method thereof is provided, by be coated with scattering layer on substrate of glass, effectively dwindled the refringence distance between substrate of glass and anodic conductive film, the total reflection effect of light is weakened, improve light extraction efficiency, avoided the light loss of side simultaneously, strengthened luminous efficiency.
The embodiment of the present invention provides a kind of organic electroluminescence device, comprise successively substrate of glass, scattering layer, anodic conductive film, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and negative electrode, the material of described scattering layer is the composite material that polytetrafluoroethyl-ne aqueous solution doping charcoal-aero gel forms, in the material of described scattering layer, the doping mass fraction of described charcoal-aero gel is 5 ~ 20%.
Preferably, charcoal-aero gel is central hole structure, and aperture is 20 ~ 200nm.
Preferably, the mass fraction of polytetrafluoroethyl-ne aqueous solution is 20 ~ 60%.
Preferably, the thickness of scattering layer is 10 ~ 200 μ m.
In the material of scattering layer, the polytetrafluoroethyl-ne aqueous solution is main body, and charcoal-aero gel is object.
Preferably, in the material of scattering layer, the doping mass fraction of charcoal-aero gel is 10 ~ 15%.
Take ITO as example, because the refractive index of ITO is 1.8-1.9, and the refractive index of glass is 1.5, light from ITO through the glass outgoing, can produce total reflection, it is larger that refractive index differs, total reflection effect is approximately obvious, just having more light to be limited in device can not outgoing, and between inserts the charcoal-aero gel of one deck central hole structure, can make the light generation scattering process of this part, change incidence angle, the optic angle degree that makes part be greater than critical angle changes, thereby be refracted to smoothly in glass, finally shine in air, effectively improve light extraction efficiency, the central hole structure of charcoal-aero gel can greatly improve this scattering process.
Preferably, the material of anodic conductive film is indium tin oxide (ITO), mixes the tin oxide (IZO) of zinc or mix the zinc oxide (AZO) of aluminium; More preferably, the material of anodic conductive film is indium tin oxide (ITO).
Preferably, the material of hole injection layer is molybdenum trioxide (MoO
3), tungstic acid (WO
3) or vanadic oxide (V
2O
5); More preferably, the material of hole injection layer is molybdenum trioxide (MoO
3).
Preferably, the thickness of hole injection layer is 20 ~ 80nm; More preferably, the thickness of hole injection layer is 40nm.
Preferably, the hole mobile material of hole transmission layer is 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane (TAPC), 4,4', 4 " tri-(carbazole-9-yl) triphenylamine (TCTA), N, N '-(1-naphthyl)-N; N '-diphenyl-4,4 '-benzidine (NPB); More preferably, the hole mobile material of hole transmission layer is N, N '-(1-naphthyl)-N, N '-diphenyl-4,4 '-benzidine (NPB).
Preferably, the thickness of hole transmission layer is 20 ~ 60nm; More preferably, the thickness of hole transmission layer is 50nm.
Preferably, the material of luminescent layer is the composite material that the electron transport material doped luminescent material forms.
Preferably, electron transport material is 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,2,4-triazole derivative (as TAZ) or N-aryl benzimidazole (TPBI).
Preferably, luminescent material is two (4,6-difluorophenyl pyridine-N, C
2) the pyridine formyl closes iridium (FIrpic), two (2-methyl-diphenyl [f, h] quinoxaline) (acetylacetone,2,4-pentanedione) and close iridium (Ir (MDQ)
2(acac)) or three (2-phenylpyridines) close iridium (Ir (ppy)
3).
Preferably, the material of luminescent layer is that N-aryl benzimidazole (TPBI) three (the 2-phenylpyridines) that adulterate close iridium (Ir (ppy)
3) composite material that forms.
Preferably, in the material of luminescent layer, the doping mass fraction of luminescent material is 1%-20%; More preferably, in the material of luminescent layer, the doping mass fraction of luminescent material is 10%.
Preferably, the thickness of luminescent layer is 2 ~ 30nm; More preferably, the thickness of luminescent layer is 20nm.
Preferably, the material of electron transfer layer is 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,2,4-triazole derivative (as TAZ) or N-aryl benzimidazole (TPBI); More preferably, the material of electron transfer layer is 1,2,4-triazole derivative (TAZ).
Preferably, the thickness of electron transfer layer is 40 ~ 80nm; More preferably, the thickness of electron transfer layer is 50nm.
Preferably, the material of electron injecting layer is cesium carbonate (Cs
2CO
3), cesium fluoride (CsF), nitrine caesium (CsN
3) or lithium fluoride (LiF); More preferably, the material of electron injecting layer is nitrine caesium (CsN
3).
Preferably, the thickness of electron injecting layer is 0.5 ~ 10nm; More preferably, the thickness of electron injecting layer is 5nm.
Preferably, negative electrode is silver (Ag), aluminium (Al), platinum (Pt) or gold (Au); More preferably, negative electrode is silver (Ag).
Preferably, the thickness of negative electrode is 80 ~ 300nm; More preferably, the thickness of negative electrode is 100nm.
Correspondingly, the embodiment of the present invention also provides a kind of preparation method of organic electroluminescence device, comprises the following steps:
Clean substrate of glass is provided, carry out the coating of scattering layer on the substrate of glass of treated mistake, the material of described scattering layer is the composite material that polytetrafluoroethyl-ne aqueous solution doping charcoal-aero gel forms, and in the material of described scattering layer, the doping mass fraction of described charcoal-aero gel is 5 ~ 20%;
On scattering layer, adopt the method for electron beam evaporation plating or magnetron sputtering to prepare anodic conductive film;
Evaporation hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and metallic cathode successively on anodic conductive film, obtain organic electroluminescence device.
Preferably, substrate of glass is commercially available simple glass.
Particularly, the clean operation of substrate of glass is: substrate of glass is carried out to photoetching treatment, be cut into needed size, use successively liquid detergent, deionized water, acetone, ethanol, each ultrasonic 15min of isopropyl alcohol, the organic pollution of removal glass surface.
Preferably, charcoal-aero gel is central hole structure, and aperture is 20 ~ 200nm.
Preferably, the mass fraction of polytetrafluoroethyl-ne aqueous solution is 20 ~ 60%.
In the material of scattering layer, the polytetrafluoroethyl-ne aqueous solution is main body, and charcoal-aero gel is object.
Preferably, in the material of scattering layer, the doping mass fraction of charcoal-aero gel is 10 ~ 15%.
Preferably, scattering layer adopts the mode of spin coating or blade coating to be arranged on substrate of glass.
Preferably, spin coating process medium speed is 500 ~ 6000 rev/mins, and the time is 15 ~ 30s.
Preferably, after the scattering layer preparation, adopt baking oven to be dried.
Preferably, the thickness of scattering layer is 10 ~ 200 μ m.
Preferably, the material of anodic conductive film is indium tin oxide (ITO), mixes the tin oxide (IZO) of zinc or mix the zinc oxide (AZO) of aluminium; More preferably, the material of anodic conductive film is indium tin oxide (ITO).
Anodic conductive film adopts the method for electron beam evaporation plating or magnetron sputtering to be arranged on scattering layer.
Preferably, in magnetron sputtering process, vacuum degree is 4 * 10
-3Pa ~ 2 * 10
-4Pa, sputtering power is 50 ~ 300W.
Evaporation hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and metallic cathode successively on anodic conductive film.
Preferably, the material of hole injection layer is molybdenum trioxide (MoO
3), tungstic acid (WO
3) or vanadic oxide (V
2O
5); More preferably, the material of hole injection layer is molybdenum trioxide (MoO
3).
Preferably, the thickness of hole injection layer is 20 ~ 80nm; More preferably, the thickness of hole injection layer is 40nm.
Preferably, the hole mobile material of hole transmission layer is 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane (TAPC), 4,4', 4 " tri-(carbazole-9-yl) triphenylamine (TCTA), N, N '-(1-naphthyl)-N; N '-diphenyl-4,4 '-benzidine (NPB); More preferably, the hole mobile material of hole transmission layer is N, N '-(1-naphthyl)-N, N '-diphenyl-4,4 '-benzidine (NPB).
Preferably, the thickness of hole transmission layer is 20 ~ 60nm; More preferably, the thickness of hole transmission layer is 50nm.
Preferably, the material of luminescent layer is the composite material that the electron transport material doped luminescent material forms.
Preferably, electron transport material is 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,2,4-triazole derivative (as TAZ) or N-aryl benzimidazole (TPBI).
Preferably, luminescent material is two (4,6-difluorophenyl pyridine-N, C
2) the pyridine formyl closes iridium (FIrpic), two (2-methyl-diphenyl [f, h] quinoxaline) (acetylacetone,2,4-pentanedione) and close iridium (Ir (MDQ)
2(acac)) or three (2-phenylpyridines) close iridium (Ir (ppy)
3).
Preferably, the material of luminescent layer is that N-aryl benzimidazole (TPBI) three (the 2-phenylpyridines) that adulterate close iridium (Ir (ppy)
3) composite material that forms.
Preferably, in the material of luminescent layer, the doping mass fraction of luminescent material is 1%-20%; More preferably, in the material of luminescent layer, the doping mass fraction of luminescent material is 10%.
Preferably, the thickness of luminescent layer is 2 ~ 30nm; More preferably, the thickness of luminescent layer is 20nm.
Preferably, the material of electron transfer layer is 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,2,4-triazole derivative (as TAZ) or N-aryl benzimidazole (TPBI); More preferably, the material of electron transfer layer is 1,2,4-triazole derivative (TAZ).
Preferably, the thickness of electron transfer layer is 40 ~ 80nm; More preferably, the thickness of electron transfer layer is 50nm.
Preferably, the material of electron injecting layer is cesium carbonate (Cs
2CO
3), cesium fluoride (CsF), nitrine caesium (CsN
3) or lithium fluoride (LiF); More preferably, the material of electron injecting layer is nitrine caesium (CsN
3).
Preferably, the thickness of electron injecting layer is 0.5 ~ 10nm; More preferably, the thickness of electron injecting layer is 5nm.
Preferably, the evaporation of hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer is vacuum evaporation, and the evaporation temperature is 100 ~ 500 ℃, and vacuum degree is 1 * 10
-3～1 * 10
-5Pa.
Preferably, negative electrode is silver (Ag), aluminium (Al), platinum (Pt) or gold (Au); More preferably, negative electrode is silver (Ag).
Preferably, the thickness of negative electrode is 80 ~ 300nm; More preferably, the thickness of negative electrode is 100nm.
Preferably, the evaporation of negative electrode is vacuum evaporation, and the evaporation temperature is 500 ~ 1000 ℃, and vacuum degree is 1 * 10
-3～1 * 10
-5Pa.
Implement the embodiment of the present invention, there is following beneficial effect:
(1) organic electroluminescence device with scattering layer provided by the invention, scattering layer utilizes the preparation of adulterating of the material polytetrafluoroethylene of the material charcoal-aero gel of metalloid oxide nano structure and low-refraction, effectively dwindled the refringence distance between substrate of glass and anodic conductive film, the total reflection effect that light is arrived between glass from anodic conductive film arrival low-refraction scattering layer again weakens, and has improved light extraction efficiency;
(2) organic electroluminescence device with scattering layer provided by the invention, in scattering layer, the material charcoal-aero gel of nanostructure adds, in the middle of can making to focus on by scattering toward the light of both sides emission, avoid the light loss of side, strengthened the luminous efficiency of luminescent device.
The accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, below will the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the structure chart of the organic electroluminescence device that provides of the embodiment of the present invention 1;
Fig. 2 is organic electroluminescence device and the current density of existing organic electroluminescence device and the graph of a relation of luminous efficiency that the embodiment of the present invention 1 provides.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Embodiment based in the present invention, those of ordinary skills, not making under the creative work prerequisite the every other embodiment obtained, belong to the scope of protection of the invention.
Embodiment 1
A kind of preparation method of organic electroluminescence device comprises the following steps:
(1) substrate of glass is used to liquid detergent successively, deionized water, ultrasonic 15min, the organic pollution of removal glass surface; On substrate of glass, blade coating prepares scattering layer, then is placed on oven for drying moisture.
Particularly, in the present embodiment, the material of scattering layer is the composite material that the mass fraction polytetrafluoroethylene (PTFE) aqueous solution doping charcoal-aero gel that is 40% forms, and wherein, the doping mass fraction of charcoal-aero gel is 8%, and the aperture of charcoal-aero gel is 120nm; The thickness of scattering layer is 50 μ m.
(2) adopt the method for magnetron sputtering to prepare the anode conducting film on scattering layer;
Particularly, in magnetron sputtering process, vacuum degree is 4 * 10
-3Pa, sputtering power is 150W, the material of anodic conductive film is ITO.
(3) evaporation hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and metallic cathode successively on the anode conducting film, obtain organic electroluminescence device.
The evaporation of hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer is vacuum evaporation, and the evaporation temperature is 400 ℃, and vacuum degree is 1 * 10
-5Pa.The evaporation of negative electrode is vacuum evaporation, and the evaporation temperature is 800 ℃, and vacuum degree is 1 * 10
-4Pa.
Wherein, the material of hole injection layer is molybdenum trioxide (MoO
3), thickness is 40nm; The material of hole transmission layer is NPB, and thickness is 50nm; The material of luminescent layer is TPBi doping (Ir (ppy)
3) composite material (TPBi:(Ir (ppy) that forms
3)), (Ir (ppy)
3) the doping mass fraction be 10%, light emitting layer thickness is 20nm; The material of electron transfer layer is TAZ, and thickness is 50nm; The material of electron injecting layer is nitrine caesium (CsN
3), thickness is 5nm; Negative electrode is silver (Ag), and thickness is 100nm.
Fig. 1 is the structural representation of the organic electroluminescence device of the present embodiment.As shown in Figure 1, the structure of this organic electroluminescence device comprises, substrate of glass 10, scattering layer 20, anodic conductive film 30, hole injection layer 40, hole transmission layer 50, luminescent layer 60, electron transfer layer 70, electron injecting layer 80 and negative electrode 90.Wherein, the material of scattering layer is the composite material that the mass fraction polytetrafluoroethylene (PTFE) aqueous solution doping charcoal-aero gel that is 40% forms, and the thickness of scattering layer is 50 μ m.The structure of this organic electroluminescence device is: simple glass/PTFE: charcoal-aero gel (8wt%)/ITO/MoO
3/ NPB/TPBi:(Ir (ppy)
3) (10wt%)/TAZ/CsN
3/ Ag.
Fig. 2 is organic electroluminescence device and the current density of existing luminescent device and the graph of a relation of luminous efficiency of the present embodiment.Wherein, the current density that curve 1 is the present embodiment organic electroluminescence device and the graph of a relation of luminous efficiency; Curve 2 is the current density of existing organic electroluminescence device and the graph of a relation of luminous efficiency.Wherein, the structure of existing luminescent device is: simple glass //ITO/MoO
3/ NPB/TPBi:(Ir (ppy)
3) (10wt%)/TAZ/CsN
3/ Ag.
As can see from Figure 2, under different current densities, the luminous efficiency of the present embodiment organic electroluminescence device is all than having the large of organic electroluminescence device now, maximum luminous efficiency is 17lm/W, and that existing organic electroluminescence device is only 14lm/W, this explanation, utilize the central hole structure of mesoporous carbon aeroge to be coated on substrate of glass and prepare scattering layer, can make originally to differ due to refractive index the light generation scattering process of the total reflection produced too greatly, change incidence angle, the optic angle degree that makes part be greater than critical angle changes, thereby be refracted to smoothly in glass, effectively improve light extraction efficiency.
Embodiment 2
A kind of preparation method of organic electroluminescence device comprises the following steps:
(1) substrate of glass is used to liquid detergent successively, deionized water, ultrasonic 15min, the organic pollution of removal glass surface; On substrate of glass, spin coating prepares scattering layer, then is placed on oven for drying moisture.
Particularly, in the present embodiment, the material of scattering layer is the composite material that the mass fraction polytetrafluoroethylene (PTFE) aqueous solution doping charcoal-aero gel that is 60% forms, and wherein, the doping mass fraction of charcoal-aero gel is 5%, and the aperture of charcoal-aero gel is 20nm; The thickness of scattering layer is 200 μ m.Spin coating process medium speed is 500 rev/mins, and the time is 15s.
(2) adopt the method for magnetron sputtering to prepare the anode conducting film on scattering layer;
Particularly, in magnetron sputtering process, vacuum degree is 4 * 10
-3Pa, sputtering power is 300W, the material of anodic conductive film is IZO.
(3) evaporation hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and metallic cathode successively on the anode conducting film, obtain organic electroluminescence device.
The evaporation of hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer is vacuum evaporation, and the evaporation temperature is 400 ℃, and vacuum degree is 1 * 10
-5Pa.The evaporation of negative electrode is vacuum evaporation, and the evaporation temperature is 800 ℃, and vacuum degree is 1 * 10
-4Pa.
Wherein, the material of hole injection layer is V
2O
5, thickness is 20nm; The material of hole transmission layer is TCTA, and thickness is 60nm; The material of luminescent layer is TPBi doping Ir (MDQ)
2(acac) composite material (TPBi:Ir (MDQ) formed
2(acac)), Ir (MDQ)
2(acac) doping mass fraction is 2%, and light emitting layer thickness is 20nm; The material of electron transfer layer is Bphen, and thickness is 80nm; The material of electron injecting layer is Cs
2CO
3, thickness is 10nm; Negative electrode is silver (Al), and thickness is 80nm.
The structure of the organic electroluminescence device that the present embodiment provides is: simple glass/PTFE: charcoal-aero gel (5wt%)/IZO/V
2O
5/ TCTA/TPBi:Ir (MDQ)
2(acac) (2wt%)/Bphen/Cs
2CO
3/ Al, its maximum luminous efficiency is 16.8lm/W.
Embodiment 3
A kind of preparation method of organic electroluminescence device comprises the following steps:
(1) substrate of glass is used to liquid detergent successively, deionized water, ultrasonic 15min, the organic pollution of removal glass surface; On substrate of glass, spin coating prepares scattering layer, then is placed on oven for drying moisture.
Particularly, in the present embodiment, the material of scattering layer is the composite material that the mass fraction polytetrafluoroethylene (PTFE) aqueous solution doping charcoal-aero gel that is 20% forms, and wherein, the doping mass fraction of charcoal-aero gel is 20%, and the aperture of charcoal-aero gel is 200nm; The thickness of scattering layer is 200 μ m.Spin coating process medium speed is 3000 rev/mins, and the time is 20s.
(2) adopt the method for magnetron sputtering to prepare the anode conducting film on scattering layer;
Particularly, in magnetron sputtering process, vacuum degree is 2 * 10
-4Pa, sputtering power is 50W, the material of anodic conductive film is AZO.
(3) evaporation hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and metallic cathode successively on the anode conducting film, obtain organic electroluminescence device.
The evaporation of hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer is vacuum evaporation, and the evaporation temperature is 400 ℃, and vacuum degree is 1 * 10
-5Pa.The evaporation of negative electrode is vacuum evaporation, and the evaporation temperature is 800 ℃, and vacuum degree is 1 * 10
-4Pa.
Wherein, the material of hole injection layer is WO
3, thickness is 80nm; The material of hole transmission layer is TAPC, and thickness is 20nm; The material of luminescent layer is the composite material (TAZ:Firpic) that TAZ doped F irpic forms, and the doping mass fraction of Firpic is 20%, and light emitting layer thickness is 30nm; The material of electron transfer layer is TPBi, and thickness is 35nm; The material of electron injecting layer is CsF, and thickness is 0.5nm; Negative electrode is silver (Pt), and thickness is 80nm.
The structure of the organic electroluminescence device that the present embodiment provides is: simple glass/PTFE: charcoal-aero gel (5wt%)/AZO/WO
3/ TAPC/TAZ:Firpic(20wt%)/TPBi/CsF/Pt, the luminous efficiency 15lm/W that it is maximum.
Embodiment 4
A kind of preparation method of organic electroluminescence device comprises the following steps:
(1) substrate of glass is used to liquid detergent successively, deionized water, ultrasonic 15min, the organic pollution of removal glass surface; On substrate of glass, spin coating prepares scattering layer, then is placed on oven for drying moisture.
Particularly, in the present embodiment, the material of scattering layer is the composite material that the mass fraction polytetrafluoroethylene (PTFE) aqueous solution doping charcoal-aero gel that is 45% forms, and wherein, the doping mass fraction of charcoal-aero gel is 10%, and the aperture of charcoal-aero gel is 150nm; The thickness of scattering layer is 30 μ m.Spin coating process medium speed is 6000 rev/mins, and the time is 30s.
(2) adopt the method for magnetron sputtering to prepare the anode conducting film on scattering layer;
Particularly, in magnetron sputtering process, vacuum degree is 5 * 10
-4Pa, sputtering power is 200W, the material of anodic conductive film is ITO.
(3) evaporation hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and metallic cathode successively on the anode conducting film, obtain organic electroluminescence device.
The evaporation of hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer is vacuum evaporation, and the evaporation temperature is 400 ℃, and vacuum degree is 1 * 10
-5Pa.The evaporation of negative electrode is vacuum evaporation, and the evaporation temperature is 800 ℃, and vacuum degree is 1 * 10
-4Pa.
Wherein, the material of hole injection layer is molybdenum trioxide (MoO
3), thickness is 45nm; The material of hole transmission layer is TAPC, and thickness is 45nm; The material of luminescent layer is Bphen doping (Ir (ppy)
3) composite material (Bphen:Ir (ppy) that forms
3), (Ir (ppy)
3) the doping mass fraction be 6%, light emitting layer thickness is 12nm; The material of electron transfer layer is TPBi, and thickness is 75nm; The material of electron injecting layer is LiF, and thickness is 0.7nm; Negative electrode is silver (Au), and thickness is 120nm.
The structure of the organic electroluminescence device that the present embodiment provides is: simple glass/PTFE: charcoal-aero gel (10wt%)/ITO/MoO
3/ TAPC/Bphen:Ir (ppy)
3(6wt%)/TPBi/LiF/Au, its maximum luminous efficiency is 15.6lm/W.
The above is the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also are considered as protection scope of the present invention.
Claims (10)
1. an organic electroluminescence device, it is characterized in that, comprise successively substrate of glass, scattering layer, anodic conductive film, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and negative electrode, the material of described scattering layer is the composite material that polytetrafluoroethyl-ne aqueous solution doping charcoal-aero gel forms, in the material of described scattering layer, the doping mass fraction of described charcoal-aero gel is 5 ~ 20%.
2. organic electroluminescence device as claimed in claim 1, is characterized in that, described charcoal-aero gel is central hole structure, and aperture is 20 ~ 200nm.
3. organic electroluminescence device as claimed in claim 1, is characterized in that, the mass fraction of described polytetrafluoroethyl-ne aqueous solution is 20 ~ 60%.
4. organic electroluminescence device as claimed in claim 1, is characterized in that, the thickness of described scattering layer is 10 ~ 200 μ m.
5. organic electroluminescence device as claimed in claim 1, is characterized in that, in the material of described scattering layer, the doping mass fraction of described charcoal-aero gel is 10 ~ 15%.
6. the preparation method of an organic electroluminescence device, is characterized in that, comprises the following steps:
Clean substrate of glass is provided, carry out the coating of scattering layer on the substrate of glass of treated mistake, the material of described scattering layer is the composite material that polytetrafluoroethyl-ne aqueous solution doping charcoal-aero gel forms, and in the material of described scattering layer, the doping mass fraction of described charcoal-aero gel is 5 ~ 20%;
On described scattering layer, adopt the method for electron beam evaporation plating or magnetron sputtering to prepare anodic conductive film;
Evaporation hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and metallic cathode successively on described anodic conductive film, obtain organic electroluminescence device.
7. organic electroluminescence device as claimed in claim 6, is characterized in that, described charcoal-aero gel is central hole structure, and aperture is 20 ~ 200nm.
8. the preparation method of organic electroluminescence device as claimed in claim 6, is characterized in that, the mass fraction of described polytetrafluoroethyl-ne aqueous solution is 20 ~ 60%.
9. the preparation method of organic electroluminescence device as claimed in claim 6, is characterized in that, the thickness of described scattering layer is 10 ~ 200 μ m.
10. the preparation method of organic electroluminescence device as claimed in claim 6, is characterized in that, in the material of described scattering layer, the doping mass fraction of described charcoal-aero gel is 10 ~ 15%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210147403XA CN103427032A (en) | 2012-05-14 | 2012-05-14 | Organic light-emitting device and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210147403XA CN103427032A (en) | 2012-05-14 | 2012-05-14 | Organic light-emitting device and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103427032A true CN103427032A (en) | 2013-12-04 |
Family
ID=49651496
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210147403XA Pending CN103427032A (en) | 2012-05-14 | 2012-05-14 | Organic light-emitting device and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103427032A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1512241A (en) * | 2002-12-26 | 2004-07-14 | �ն��繤��ʽ���� | Planar light source and display device using it |
| CN101288343A (en) * | 2005-09-22 | 2008-10-15 | 松下电工株式会社 | Organic light emitting element and its manufacturing method |
| WO2009028456A1 (en) * | 2007-08-27 | 2009-03-05 | Panasonic Electric Works Co., Ltd. | Organic el light emitting element |
| CN101682001A (en) * | 2007-05-10 | 2010-03-24 | 伊斯曼柯达公司 | Electroluminescent device having improved light output |
| WO2011019050A1 (en) * | 2009-08-13 | 2011-02-17 | 株式会社タイカ | Gel member for optical use, method for assembling optical device using same, and optical device |
| CN102449803A (en) * | 2009-05-29 | 2012-05-09 | 欧司朗光电半导体有限公司 | Organic light-emitting diode |
-
2012
- 2012-05-14 CN CN201210147403XA patent/CN103427032A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1512241A (en) * | 2002-12-26 | 2004-07-14 | �ն��繤��ʽ���� | Planar light source and display device using it |
| CN101288343A (en) * | 2005-09-22 | 2008-10-15 | 松下电工株式会社 | Organic light emitting element and its manufacturing method |
| CN101682001A (en) * | 2007-05-10 | 2010-03-24 | 伊斯曼柯达公司 | Electroluminescent device having improved light output |
| WO2009028456A1 (en) * | 2007-08-27 | 2009-03-05 | Panasonic Electric Works Co., Ltd. | Organic el light emitting element |
| CN102449803A (en) * | 2009-05-29 | 2012-05-09 | 欧司朗光电半导体有限公司 | Organic light-emitting diode |
| WO2011019050A1 (en) * | 2009-08-13 | 2011-02-17 | 株式会社タイカ | Gel member for optical use, method for assembling optical device using same, and optical device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102916135A (en) | Inverted organic light-emitting device and preparation method thereof | |
| CN103579519A (en) | Organic electroluminescence device and manufacturing method thereof | |
| CN103137876B (en) | Organnic electroluminescent device and preparation method thereof | |
| CN103545445A (en) | Organic electroluminescence device and manufacturing method thereof | |
| CN103311446A (en) | Inverted top-emitting organic electroluminescent device and preparation method thereof | |
| CN103378309A (en) | Organic light-emitting device and manufacturing method thereof | |
| CN103456894A (en) | Organic electroluminescent device and manufacturing method thereof | |
| CN103378299A (en) | Organic light-emitting device and preparing method thereof | |
| CN103378306A (en) | Organic light-emitting device and preparing method thereof | |
| CN103427032A (en) | Organic light-emitting device and preparation method thereof | |
| CN103427025B (en) | A kind of organic electroluminescence device and preparation method thereof | |
| CN103427031A (en) | Organic light-emitting device and preparation method thereof | |
| CN104124365A (en) | Organic light-emitting device and preparation method thereof | |
| CN103378298A (en) | Reverse top emission organic light-emitting device and preparing method thereof | |
| CN103311447A (en) | Organic electroluminescent device and preparation method thereof | |
| CN103311453A (en) | Electroluminescent device and preparation method thereof | |
| CN104425733A (en) | Organic electroluminescence device and manufacturing method thereof | |
| CN104009168A (en) | Organic electroluminescent device and preparation method | |
| CN103367648A (en) | Organic electroluminescence device and manufacturing method thereof | |
| CN103311442A (en) | Electroluminescent device and preparation method thereof | |
| CN103579513A (en) | Inverted bottom-emitting organic electroluminescence device and manufacturing method thereof | |
| CN103427028B (en) | Organic electroluminescence device and preparation method thereof | |
| CN104124357A (en) | Organic light-emitting device and preparation method thereof | |
| CN103367649A (en) | Organic electroluminescent device and preparation method thereof | |
| CN103311448A (en) | Organic electroluminescent device and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20131204 |