CN102447034A - 发光二极管封装结构及其制造方法 - Google Patents

发光二极管封装结构及其制造方法 Download PDF

Info

Publication number
CN102447034A
CN102447034A CN2010102989725A CN201010298972A CN102447034A CN 102447034 A CN102447034 A CN 102447034A CN 2010102989725 A CN2010102989725 A CN 2010102989725A CN 201010298972 A CN201010298972 A CN 201010298972A CN 102447034 A CN102447034 A CN 102447034A
Authority
CN
China
Prior art keywords
substrate
led
package structure
layer
emitting diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN2010102989725A
Other languages
English (en)
Other versions
CN102447034B (zh
Inventor
张洁玲
张超雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
Original Assignee
Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rongchuang Energy Technology Co ltd, Zhanjing Technology Shenzhen Co Ltd filed Critical Rongchuang Energy Technology Co ltd
Priority to CN201010298972.5A priority Critical patent/CN102447034B/zh
Priority to US13/110,008 priority patent/US20120080700A1/en
Publication of CN102447034A publication Critical patent/CN102447034A/zh
Application granted granted Critical
Publication of CN102447034B publication Critical patent/CN102447034B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)

Abstract

本发明涉及一种发光二极管封装结构，包括：基板、发光二极管芯片、封装层和透明环绕层。所述基板包括电路结构。所述发光二极管芯片与所述电路结构电连接。所述封装层覆盖于所述基板上，包覆所述发光二极管芯片。所述透明环绕层的材料硬度比所述封装层的材料硬度高。所述透明环绕层设置在所述基板上，且环绕在所述封装层的四周。本发明还涉及一种发光二极管封装结构的制造方法。

Description

发光二极管封装结构及其制造方法
技术领域
本发明涉及半导体领域，尤其涉及一种发光二极管封装结构及其制造方法。
背景技术
现在，发光二极管因其能够更好地提高能源效率和提供更好的照明效果开始被广泛应用到很多领域。通常，为保护其内部元件，往往对其进行封装处理，图1为现有技术提供的发光二极管封装结构的剖视图。此发光二极管封装结构10包括基板11、发光二极管芯片13和封装层14。所述基板包括电路结构114。所述发光二极管芯片13设置在所述基板11上，并通过金属导线131和电路结构114电连接，然后采用模压制造方法将封装层14覆盖在基板11上，包覆发光二极管芯片13和金属导线131，从而达到防湿气与保护的效果。所用封装层14的材料大都是环氧树脂和硅树脂等树脂材料，但环氧树脂和硅树脂等的机械强度不足，用它们做成的封装层容易磨损，不能有效的保护发光二极管封装结构10的内部结构，从而造成产品容易损坏。
发明内容
有鉴于此，有必要提供一种能够有效的保护发光二极管封装结构的内部结构的发光二极管封装结构及其制造方法。
一种发光二极管封装结构，包括：基板、发光二极管芯片、封装层和透明环绕层。所述基板包括电路结构。所述发光二极管芯片与所述电路结构电连接。所述封装层覆盖于所述基板上，包覆所述发光二极管芯片。所述透明环绕层的材料硬度比所述封装层的材料硬度高。所述透明环绕层设置在所述基板上，且环绕在所述封装层的四周。
一种发光二极管封装结构的制造方法，包括下列步骤：
提供一基底，所述基底可以分为多个基板，每个基板包括有电路结构；
将发光二极管芯片设置在每个所述基板上，与相对应的所述电路结构电连接；
将一覆盖层覆盖在所述基底上，包覆所述发光二极管芯片；
在所述覆盖层上形成多条交叉的沟道，将所述覆盖层分成多个封装层，每个封装层用于包覆一个发光二极管芯片；
在所述沟道内形成透明环绕层，环绕所述封装层；
沿所述沟道切割所述基板，形成多个所述发光二极管封装结构。
由于所述发光二极管封装结构中的透明环绕层的材料硬度比所述封装层的材料硬度高，能够有效的增强封装结构的硬度和抗磨损性能，从而保护发光二极管封装结构不易被破坏。
附图说明
图1是用现有技术提供的发光二极管封装结构的剖视图。
图2是本发明一实施方式提供的发光二极管封装结构的俯视图。
图3是图2中的发光二极管封装结构沿III-III方向的剖视图。
图4是本发明另一实施方式提供的发光二极管封装结构的俯视图。
图5-12是本发明实施方式提供的发光二极管封装结构的制造方法示意图。
图13是本发明实施方式提供的发光二极管封装结构的制造方法中形成多条交叉的沟道后整个基底的立体示意图。
主要元件符号说明
发光二极管封装结构        10，20，30
基板                      11，21，31
第一表面                  211
第二表面                  212
通孔                      213，313
电路结构                  114，214
第一电极                  214a
第二电极                  214b
基底                      22
发光二极管芯片            13，23
金属导线                  131，231
封装层                14，24
透明环绕层            25
遮挡层                26
绝缘胶                27
覆盖层                28
沟道                  29
具体实施方式
以下将结合附图对本发明作进一步的详细说明。
请参阅图2和图3，本发明一实施方式提供的发光二极管封装结构20包括：基板21、发光二极管芯片23、封装层24和透明环绕层25。
所述基板21用于支撑所述发光二极管封装结构20，所述基板21具有相对的第一表面211和第二表面212，以及贯穿所述第一表面211和第二表面212的通孔213。所述通孔213的数量至少为两个，在本实施例中，所述基板21上开设有两个通孔213，该两个通孔213分别位于所述基板21相对的两侧边缘。如图4所示，在其他实施例中，通孔313的数量也可以为四个，分别位于基板31的四个角上，在每个角形成一个四分之一圆弧状的缺口。这样，在制造所述发光二极管封装结构30的时候，所述通孔313可以用于定位，同时由于尖角结构容易被损坏，而在角落形成缺口可以避免尖角的形成，使得所述发光二极管封装结构30更加不易被损坏。
所述基板21还包括电路结构214，所述电路结构214包括第一电极214a和第二电极214b，所述第一电极214a和第二电极214b分别通过所述通孔213由所述第一表面211延伸至所述第二表面212上。
所述发光二极管芯片23设置于所述第二电极214b的表面，与所述第二电极214b电连接，并通过所述金属导线231与所述第一电极214a电连接。
所述封装层24覆盖于所述基板21上，包覆所述发光二极管芯片23和所述金属导线231。所述封装层24的材料可为环氧树脂和硅树脂等透明树脂材料。所述封装层24中还可以包含荧光粉。
所述透明环绕层25设置在所述基板21上，且环绕在所述封装层24的四周，所述透明环绕层25所用材料的硬度比所述封装层24所用材料的硬度高。
请参阅图5-图12，本发明实施方式提供的发光二极管封装结构20的制造方法包括以下步骤。
如图5所示，首先，提供一基底22，所述基底22可以分为多个基板21。所述基板21包括相对的第一表面211和第二表面212，以及贯穿所述第一表面211和第二表面212的通孔213。所述通孔213的数量至少为两个，在本实施例中，所述基板21上开设有两个通孔213，该两个通孔213分别位于所述基板21相对的两侧边缘。所述基板21还包括电路结构214，所述电路结构214包括第一电极214a和第二电极214b，所述第一电极214a和第二电极214b分别通过所述通孔213由所述第一表面211延伸至所述第二表面212上。
如图6所示，在所述基底22上设置遮挡层26盖住所述通孔213，所述遮挡层26仅用来挡住所述通孔213，且在之后的步骤中不会被去除。
如图7所示，在所述遮挡层26上涂布一层绝缘胶27，所述绝缘胶27可以增加所述遮挡层26的强度，且在之后的步骤中不会被去除。
如图8所示，将发光二极管芯片23设置在所述第二电极214b上，与所述第二电极214b电连接，所述发光二极管芯片23通过金属导线231与所述第一电极214a电连接。
如图9所示，将覆盖层28覆盖在所述基底22上，包覆所述发光二极管芯片23和金属导线231，所述覆盖层28的材料可为环氧树脂和硅树脂等透明树脂材料。所述覆盖层28中还可以包含荧光粉。
如图10所示，在所述覆盖层28上形成多条交叉的沟道29，将所述覆盖层28分成多个封装层24，每个封装层24用于包覆发光二极管芯片23。在所述覆盖层28上形成多条交叉的沟道29可采用蚀刻的方法。形成多条交叉的沟道29后整个基底22的立体示意图如图13所示。
如图11所示，在所述沟道29内形成透明环绕层25，环绕所述封装层24，所述透明环绕层25填满整个所述沟道29。所述透明环绕层25所用材料的硬度比所述封装层24所用材料的硬度高。
如图12所示，沿所述沟道29切割所述基底22，形成多个所述发光二极管封装结构20。优选的，改变所述通孔213的位置，使得切割之后在所述发光二极管封装结构20的每个角具有一个四分之一圆弧状的缺口。
由于所述发光二极管封装结构中的透明环绕层的材料硬度比所述封装层的材料硬度高，能够有效的增强封装结构的硬度和抗磨损性能，从而保护发光二极管封装结构不易被破坏。
可以理解的是，对于本领域的普通技术人员来说，可以根据本发明的技术构思做出其它各种相应的改变与变形，而所有这些改变与变形都应属于本发明权利要求的保护范围。

Claims (10)

1.一种发光二极管封装结构，其特征在于，该结构包括：基板、发光二极管芯片、封装层和透明环绕层，所述基板包括电路结构，所述发光二极管芯片与所述电路结构电连接，所述封装层覆盖于所述基板上，包覆所述发光二极管芯片，所述透明环绕层的材料硬度比所述封装层的材料硬度高，所述透明环绕层设置在所述基板上，且环绕在所述封装层的四周。
2.如权利要求1所述的发光二极管封装结构，其特征在于：所述基板上开有至少两个通孔，所述电路结构通过所述通孔上下导通。
3.如权利要求2所述的发光二极管封装结构，其特征在于：所述通孔为四个，且位于所述基板的四个角上，在每个角形成一个四分之一圆弧状的缺口。
4.如权利要求1所述的发光二极管封装结构，其特征在于：所述电路结构包括第一电极和第二电极，所述发光二极管芯片设置于所述第二电极的表面，与所述第二电极电连接，并通过金属导线与所述第一电极电连接。
5.如权利要求1至4任一项所述的发光二极管封装结构，其特征在于：所述封装层中还可以包含荧光粉。
6.一种发光二极管封装结构的制造方法，包括下列步骤：
提供一基底，所述基底可以分为多个基板，每个基板包括有电路结构；
将发光二极管芯片设置在所述每个基板上，与相对应的所述电路结构电连接；
将一覆盖层覆盖在所述基底上，包覆所述发光二极管芯片；
在所述覆盖层上形成多条交叉的沟道，将所述覆盖层分成多个封装层，每个封装层用于包覆一个发光二极管芯片；
在所述沟道内形成透明环绕层，环绕所述封装层；
沿所述沟道切割所述基板，形成多个所述发光二极管封装结构。
7.如权利要求6所述的发光二极管封装结构的制造方法，其特征在于：所述基板上设置有通孔，在提供基板之后还包括步骤：设置遮挡层盖住所述通孔。
8.如权利要求7所述的发光二极管封装结构的制造方法，其特征在于：在设置遮挡层盖住所述通孔之后，还包括步骤：在所述遮挡层上涂布一层绝缘胶。
9.如权利要求7或8所述的发光二极管封装结构的制造方法，其特征在于：切割之后在所述发光二极管封装结构的每个角具有一个四分之一圆弧状的缺口。
10.如权利要求6所述的发光二极管封装结构的制造方法，其特征在于：通过蚀刻的方法在覆盖层上形成所述多条交叉的沟道。
CN201010298972.5A 2010-09-30 2010-09-30 发光二极管封装结构及其制造方法 Expired - Fee Related CN102447034B (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201010298972.5A CN102447034B (zh) 2010-09-30 2010-09-30 发光二极管封装结构及其制造方法
US13/110,008 US20120080700A1 (en) 2010-09-30 2011-05-18 Light emitting diode package and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201010298972.5A CN102447034B (zh) 2010-09-30 2010-09-30 发光二极管封装结构及其制造方法

Publications (2)

Publication Number Publication Date
CN102447034A true CN102447034A (zh) 2012-05-09
CN102447034B CN102447034B (zh) 2014-05-07

Family

ID=45889047

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201010298972.5A Expired - Fee Related CN102447034B (zh) 2010-09-30 2010-09-30 发光二极管封装结构及其制造方法

Country Status (2)

Country Link
US (1) US20120080700A1 (zh)
CN (1) CN102447034B (zh)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6936852B2 (en) * 2000-07-31 2005-08-30 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method for manufacturing same
CN1684278A (zh) * 2004-04-15 2005-10-19 联欣光电股份有限公司 一种发光二极管的封装结构及其封装方法
US20070235743A1 (en) * 2006-04-05 2007-10-11 Samsung Electro-Mechanics Co., Ltd. Light emitting diode package having anodized insulation layer and fabrication method therefor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7804147B2 (en) * 2006-07-31 2010-09-28 Cree, Inc. Light emitting diode package element with internal meniscus for bubble free lens placement

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6936852B2 (en) * 2000-07-31 2005-08-30 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method for manufacturing same
CN1684278A (zh) * 2004-04-15 2005-10-19 联欣光电股份有限公司 一种发光二极管的封装结构及其封装方法
US20070235743A1 (en) * 2006-04-05 2007-10-11 Samsung Electro-Mechanics Co., Ltd. Light emitting diode package having anodized insulation layer and fabrication method therefor

Also Published As

Publication number Publication date
US20120080700A1 (en) 2012-04-05
CN102447034B (zh) 2014-05-07

Similar Documents

Publication Publication Date Title
CN102881780B (zh) 发光模组及其制造方法
US8247833B2 (en) LED package and manufacturing method thereof
US20070018191A1 (en) Side view LED with improved arrangement of protection device
CN1885536A (zh) 半导体封装
WO2012061091A3 (en) Encapsulated die, microelectronic package containing same, and method of manufacturing said microelectronic package
TW200741997A (en) Stacked package structure and method for manufacturing the same
CN103090891A (zh) 磁性传感器装置和用于制造磁性传感器装置的方法
US9899587B2 (en) Lead frame and light emitting diode package having the same
CN102760816A (zh) 发光二极管封装结构及其制造方法
KR20160100359A (ko) 발광 필름 구조
CN104347577A (zh) 重新分布板、电子组件和模块
US20140259654A1 (en) Method of manufacturing led module
CN102217059A (zh) 一种封装用绝缘环、绝缘环组合件和封装体
CN103227164A (zh) 半导体封装构造及其制造方法
CN102522400B (zh) 一种防静电损伤的垂直发光器件及其制造方法
TW201828505A (zh) 光電封裝體及其製造方法
CN103367174A (zh) 制造半导体器件的方法以及半导体器件
CN102447034B (zh) 发光二极管封装结构及其制造方法
CN103824829A (zh) 非焊接掩膜限定的铜焊盘和嵌入式铜焊盘
CN105378953B (zh) 发光器件
US20130248906A1 (en) Light emitting diode package structure and method for fabricating the same
KR102111142B1 (ko) 발광 장치 및 그 제조 방법
CN108075029B (zh) 一种节能型照明装置
CN102543910A (zh) 芯片封装件及其制造方法
CN102829369B (zh) 发光二极管灯条及其制造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20140507

Termination date: 20150930

EXPY Termination of patent right or utility model