CN102437563A - Single-power circuit and multi-power circuit - Google Patents
Single-power circuit and multi-power circuit Download PDFInfo
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- CN102437563A CN102437563A CN2011104315238A CN201110431523A CN102437563A CN 102437563 A CN102437563 A CN 102437563A CN 2011104315238 A CN2011104315238 A CN 2011104315238A CN 201110431523 A CN201110431523 A CN 201110431523A CN 102437563 A CN102437563 A CN 102437563A
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Abstract
The invention discloses a single-power circuit and a multi-power circuit. An input bonding pad of the single-power circuit is provided with an electro-static discharge (ESD) protection circuit. The single-power circuit comprises an input metal oxide semiconductor (MOS) transistor, wherein the gate breakdown voltage of the input MOS transistor is higher than the breakdown voltage of the ESD protection circuit. The multi-power circuit at least comprises a first power circuit and a second power circuit, wherein the operating voltage of the first power circuit is a first voltage; the voltage of the second power circuit is a second voltage which is higher than the first voltage; an input bonding pad of the first power circuit is provided with a first ESD protection circuit; an input bonding pad of the second power circuit is provided with a second ESD protection circuit; the first power circuit comprises a first input MOS transistor; the gate breakdown voltage of the first input MOS transistor is higher than the breakdown voltage of the second ESD protection circuit; and the gate breakdown voltage of a second input MOS transistor is higher than the breakdown voltage of the second ESD protection circuit. When the circuits are used, electro-static damages to the power circuit can be prevented.
Description
Technical field
The present invention relates to technical field of integrated circuits, particularly a kind of single supply circuit and many power circuits.
Background technology
Integrated circuit is easy to be subjected to destructive Electrostatic Discharge in manufacturing, assembling, test or final application, make integrated circuit receive the damage of static.Therefore usually in integrated circuit, can form esd protection circuit, promptly be coupled with the discharge cell that can the static on the I/O pad be discharged, thereby reduce the damage that static brings integrated circuit at I/O weld pad (I/O pad).Under present CMOS technology, the most frequently used esd protection circuit structure usually based on gate grounding NMOS (Gate-ground NMOS, GGNMOS).
Fig. 1 is the circuit diagram of existing single tube structure GGNMOS, and Fig. 2 is the semiconductor junction composition of single tube structure GGNMOS.At first as shown in Figure 2, said single tube structure GGNMOS comprises P type substrate 10; Be positioned at the grid 21 on substrate 10 surfaces; Lay respectively in the grid 21 both sides substrates, doping type is the source electrode 22 of N type and drains 23.In above-mentioned GGNMOS, comprise a parasitic NPN triode that constitutes by source electrode 22, drain electrode 23 and substrate 10 between the two thereof.Wherein, the drain electrode 23 as collector electrode, source electrode 22 as emitter, substrate 10 as base stage, base width is the channel length of GGNMOS.In conjunction with shown in Figure 1, said substrate 10, source electrode 22, grid 21 all are connected to ground wire GND, 23 be connected to input weld pad (being power line VDD) and will drain.Because grid 21 and substrate 10 ground connection, said GGNMOS can't open the formation conducting channel all the time.When the current potential on the power line VDD was positioned at normal operating state, said GGNMOS closed, and parasitic NPN triode wherein can conducting yet; When causing transient potential too high when receiving the ESD electrostatic pulse on the power line VDD; To trigger the entozoic NPN triode of GGNMOS and produce electric current; Make conducting between power line VDD and the ground wire GND; The current potential of power line VDD will be dragged down rapidly until above-mentioned NPN triode and closed, thereby realize the clamper to power line VDD, further reach the purpose of ESD electrostatic protection.
In the single supply circuit of prior art, in the single supply circuit 30 like 1.8V, with reference to shown in Figure 3, the operating voltage of each metal-oxide-semiconductor that it comprises is 1.8V.For the input that prevents the single supply circuit receives the damage of static, an esd protection circuit 33 (with reference to illustrated in figures 1 and 2) can be set at input weld pad 31 places of single supply circuit.The forward operating voltage of metal-oxide-semiconductor equals the operating voltage (being 1.8V) of 1.8V single supply circuit in the esd protection circuit 33, and reverse breakdown voltage (being the voltage that esd protection circuit 33 is started working) is 3V.
But along with device size is more and more littler, the grid of metal-oxide-semiconductor is more and more thinner, so the gate breakdown voltage of metal-oxide-semiconductor is more and more littler.The gate breakdown voltage of the metal-oxide-semiconductor 32 that links to each other with 1.8V single supply circuit input interface (being designated hereinafter simply as the input metal-oxide-semiconductor) is also near 3V; Perhaps less than 3V; Like this when esd protection circuit 33 is started working or before the work; 1.8V the input metal-oxide-semiconductor 32 in the single supply circuit 30 just maybe be breakdown, thereby cause 1.8V single supply circuit 30 by electrostatic damage.
In addition; In many power circuits of prior art, in the integrated circuit like 1.8V power circuit 40 and 3.3V power circuit 50, with reference to shown in Figure 4; 1.8V the operating voltage of the metal-oxide-semiconductor that power circuit 40 comprises is 1.8V, the operating voltage of the metal-oxide-semiconductor that 3.3V power circuit 50 comprises is 3.3V.1.8V it is 1.8V that input weld pad 41 places of power circuit 40 are provided with the forward operating voltage of metal-oxide-semiconductor in first esd protection circuit, 43, the first esd protection circuits 43, reverse breakdown voltage is 3V.3.3V it is 3.3V that input weld pad 51 places of power circuit 50 are provided with the forward operating voltage of metal-oxide-semiconductor in second esd protection circuit, 53, the second esd protection circuits 53, reverse breakdown voltage is 6V.The first power circuit VDD1 is the operating voltage that 1.8V power circuit 40 provides 1.8V, and second source circuit VDD2 is the operating voltage that 3.3V power circuit 50 provides 3.3V.Each esd protection circuit all discharges through earth bus VSS.
But; Input weld pad 51 linking to each other with second esd protection circuit 53 carries out static discharge; And discharge channel is that the voltage that second esd protection circuit 53 is started working is 6.7V (being 6V+0.7V) when flowing to the input weld pad that links to each other with first esd protection circuit 43 41 by the input weld pad that links to each other with second esd protection circuit 53 51.Because the operating voltage of the first input metal-oxide-semiconductor 42 is 1.8V in the 1.8V power circuit 40, the gate breakdown voltage of this first input metal-oxide-semiconductor 42 has been equal to or less than 3V.Though voltage is during greater than 3V; First esd protection circuit 43 can be brought into play the electrostatic protective function to 1.8V power circuit 40; But when first esd protection circuit 43 is started working or before the work; 1.8V the input of first in the single supply circuit 40 metal-oxide-semiconductor 42 just maybe be breakdown, thereby cause 1.8V single supply circuit 40 by electrostatic damage.Similarly, in other single supply circuit or many power circuits, its input also exists by the defective of electrostatic damage.
Likewise; Output at the single supply circuit; When pressing less than when exporting the puncture voltage of the esd protection circuit that weld pad links to each other with the source leakage discharge of the output mos pipe that links to each other of output weld pad; Then static can be at first source-drain electrode through the output mos pipe discharge, thereby cause the output mos tube grid breakdown or contact hole is breakdown easily, the output that finally causes the single supply circuit is by electrostatic damage.At the output of many power circuits, when operating voltage than the output weld pad of higher power circuit during to the output weld pad release electrostatic of the lower power circuit of operating voltage, the output of the power circuit that then operating voltage is lower is easily by electrostatic damage.The source leakage discharge of said metal-oxide-semiconductor is pressed and is referred to parasitic triode that metal-oxide-semiconductor is made up of source electrode, drain electrode and substrate between the two thereof the voltage when opening.
Therefore, the electrostatic damage that how to prevent power circuit just becomes those skilled in the art's problem demanding prompt solution.
Summary of the invention
The problem that the present invention solves provides a kind of single supply circuit and many power circuits that can prevent electrostatic damage.
For addressing the above problem; The invention provides a kind of single supply circuit; The input weld pad of said single supply circuit is provided with esd protection circuit, and said single supply circuit comprises the input metal-oxide-semiconductor, and the gate breakdown voltage of said input metal-oxide-semiconductor is greater than the puncture voltage of said esd protection circuit.
Alternatively, the operating voltage of said input metal-oxide-semiconductor is greater than the operating voltage of single supply circuit.
Alternatively, the operating voltage of said single supply circuit is 1.8V, and the operating voltage of said input metal-oxide-semiconductor is 3.3V or 5V.
Alternatively, the operating voltage of said single supply circuit is 3.3V, and the operating voltage of said input metal-oxide-semiconductor is 5V.
For addressing the above problem; The present invention also provides a kind of single supply circuit; The output weld pad of said single supply circuit is provided with esd protection circuit, and said single supply circuit comprises the output mos pipe, and the puncture voltage greater than said esd protection circuit is pressed in the source leakage discharge of said output mos pipe.
Alternatively, the operating voltage of said output metal-oxide-semiconductor is greater than the operating voltage of single supply circuit.
In order to address the above problem; The present invention also provides a kind of many power circuits, comprises first power circuit and second source circuit at least, and the operating voltage of said first power circuit is first voltage; The voltage of said second source circuit is second voltage; Said second voltage is greater than said first voltage, and the input weld pad of said first power circuit is provided with first esd protection circuit, and the input weld pad of said second source circuit is provided with second esd protection circuit; Said first power circuit comprises the first input metal-oxide-semiconductor; Said second source circuit comprises the second input metal-oxide-semiconductor, and the gate breakdown voltage of the said first input metal-oxide-semiconductor is greater than the puncture voltage of said second esd protection circuit, and the gate breakdown voltage of the said second input metal-oxide-semiconductor is greater than the puncture voltage of said second esd protection circuit.
Alternatively, the operating voltage of the said first input metal-oxide-semiconductor is greater than second voltage, and the operating voltage of the said second input metal-oxide-semiconductor is greater than second voltage.
Alternatively, the operating voltage of the said first input metal-oxide-semiconductor equals the operating voltage of the said second input metal-oxide-semiconductor.
Alternatively, said first voltage is 1.8V, and said second voltage is 3.3V, and the operating voltage of the said first input metal-oxide-semiconductor is 5V, and the operating voltage of the said second input metal-oxide-semiconductor is 5V.
Alternatively; Said many power circuits also comprise: the 3rd power circuit; The input weld pad of said the 3rd power circuit is provided with the 3rd esd protection circuit; The operating voltage of said the 3rd power circuit is a tertiary voltage; Said tertiary voltage is greater than said second voltage, and said the 3rd power circuit comprises the 3rd input metal-oxide-semiconductor, and the gate breakdown voltage of the gate breakdown voltage of the said first input metal-oxide-semiconductor, the said second input metal-oxide-semiconductor and the gate breakdown voltage of said the 3rd input metal-oxide-semiconductor are all greater than the puncture voltage of said the 3rd esd protection circuit.
Alternatively, the operating voltage of the said first input metal-oxide-semiconductor is greater than tertiary voltage, and the operating voltage of the said second input metal-oxide-semiconductor is greater than tertiary voltage, and the operating voltage of said the 3rd input metal-oxide-semiconductor is greater than tertiary voltage.
In order to address the above problem; The present invention also provides a kind of many power circuits, comprises first power circuit and second source circuit at least, and the operating voltage of said first power circuit is first voltage; The voltage of said second source circuit is second voltage; Said second voltage is greater than said first voltage, and the output weld pad of said first power circuit is provided with first esd protection circuit, and the output weld pad of said second source circuit is provided with second esd protection circuit; Said first power circuit comprises the first output mos pipe; Said second source circuit comprises the second output mos pipe, and the puncture voltage greater than said second esd protection circuit is pressed in the source leakage discharge of the said first output mos pipe, and the puncture voltage greater than said second esd protection circuit is pressed in the source leakage discharge of the said second output mos pipe.
Alternatively, the operating voltage of the said first output mos pipe is greater than second voltage, and the operating voltage of the said second output mos pipe is greater than second voltage.
Prior art is compared, and the present invention has the following advantages:
1) to the gate breakdown voltage of the metal-oxide-semiconductor that reduces to reduce because of device size in the prior art thereupon; The invention provides a kind of single supply circuit; Its input weld pad is provided with esd protection circuit; The gate breakdown voltage of the input metal-oxide-semiconductor (metal-oxide-semiconductor that promptly links to each other with single supply circuit input interface) through limiting the single supply circuit is greater than the puncture voltage of said esd protection circuit; Thereby,, can not damage the input metal-oxide-semiconductor though esd protection circuit is not worked when electrostatic potential during less than the puncture voltage of esd protection circuit yet; When electrostatic potential during greater than the puncture voltage of esd protection circuit, esd protection circuit is started working, and also can avoid the electrostatic damage of single supply circuit.
2) the present invention also provides a kind of single supply circuit; Its output weld pad is provided with esd protection circuit; The source leakage discharge pressure of the output mos pipe (metal-oxide-semiconductor that promptly links to each other with single supply circuit output interface) through limiting the single supply circuit is greater than the puncture voltage of above-mentioned esd protection circuit; Thereby compare with the output mos pipe, the ESD circuit can be opened with release electrostatic earlier, thereby can effectively protect the output mos pipe.
3) the invention provides a kind of many power circuits that comprise first power circuit and second source circuit at least; The operating voltage of said first power circuit is less than the operating voltage of said second source circuit; The input weld pad of said first power circuit is provided with first esd protection circuit; The input weld pad of said second source circuit is provided with second esd protection circuit; Input metal-oxide-semiconductor through limiting first power circuit (i.e. the first input metal-oxide-semiconductor) gate breakdown voltage is greater than the puncture voltage of second esd protection circuit; Thereby the input weld pad that can guarantee the second source circuit is when the input weld pad static discharge of first power circuit, and ESD can start working earlier, thereby the input of first power circuit can obtain better electrostatic protection; Input metal-oxide-semiconductor (promptly second importing metal-oxide-semiconductor) gate breakdown voltage through limiting the second source circuit can protect the input of second source circuit can not receive electrostatic damage greater than the puncture voltage of second esd protection circuit.
4) the present invention also provides a kind of many power circuits that comprise first power circuit and second source circuit at least; The operating voltage of said first power circuit is first voltage; The voltage of said second source circuit is second voltage; Said second voltage is greater than said first voltage; The output weld pad of said first power circuit is provided with first esd protection circuit; The output weld pad of said second source circuit is provided with second esd protection circuit, and the puncture voltage greater than said second esd protection circuit is pressed in the source leakage discharge of the output mos pipe (i.e. the first output mos pipe) through limiting first power circuit, thereby the output of first power circuit can obtain better electrostatic protection; The source leakage discharge pressure of the output mos pipe (i.e. second efferent duct) through limiting the second source circuit can protect the output of second source circuit can not receive electrostatic damage greater than the puncture voltage of said second esd protection circuit.
Description of drawings
Fig. 1 is the schematic equivalent circuit of the electrostatic discharge protective equipment of NMOS pipe with grounded-grid of prior art a kind of;
Fig. 2 is the device schematic cross-section that the NMOS of a plurality of grounded-grids of corresponding diagram 1 manages the electrostatic discharge protective equipment that constitutes;
Fig. 3 is the structural representation of a kind of 1.8V single supply of prior art circuit;
Fig. 4 is the structural representation of a kind of many power circuits of prior art;
Fig. 5 is the structural representation of the single supply circuit of the embodiment of the invention one;
Fig. 6 is the structural representation of many power circuits of the embodiment of the invention two;
Fig. 7 is the structural representation of the single supply circuit of the embodiment of the invention three;
Fig. 8 is the structural representation of many power circuits of the embodiment of the invention four.
Embodiment
For make above-mentioned purpose of the present invention, feature and advantage can be more obviously understandable, does detailed explanation below in conjunction with the accompanying drawing specific embodiments of the invention.
Set forth a lot of details in the following description so that make much of the present invention, implement but the present invention can also adopt other to be different from alternate manner described here, so the present invention has not received the restriction of following disclosed specific embodiment.
Said as the background technology part, input metal-oxide-semiconductor in the prior art in the input metal-oxide-semiconductor of single supply circuit or output mos pipe and the many power circuits or output mos pipe all suffer electrostatic damage easily.
To above-mentioned defective; The invention provides a kind of single supply circuit; The input weld pad of said single supply circuit is provided with esd protection circuit, and said single supply circuit comprises the input metal-oxide-semiconductor, and the gate breakdown voltage of said input metal-oxide-semiconductor is greater than the puncture voltage of said esd protection circuit.The present invention also provides a kind of single supply circuit, and the output weld pad of said single supply circuit is provided with esd protection circuit, and said single supply circuit comprises the output mos pipe, and the puncture voltage greater than said esd protection circuit is pressed in the source leakage discharge of said output mos pipe.
To above-mentioned defective; The present invention also provides a kind of many power circuits; At least comprise first power circuit and second source circuit, the operating voltage of said first power circuit is first voltage, and the voltage of said second source circuit is second voltage; Said second voltage is greater than said first voltage; The input weld pad of said first power circuit is provided with first esd protection circuit, and the input weld pad of said second source circuit is provided with second esd protection circuit, and said first power circuit comprises the first input metal-oxide-semiconductor; The gate breakdown voltage of the said first input metal-oxide-semiconductor is greater than the puncture voltage of said second esd protection circuit, and the gate breakdown voltage of the said second input metal-oxide-semiconductor is greater than the puncture voltage of said second esd protection circuit.The present invention also provides a kind of many power circuits; At least comprise first power circuit and second source circuit; The operating voltage of said first power circuit is first voltage, and the voltage of said second source circuit is second voltage, and said second voltage is greater than said first voltage; The output weld pad of said first power circuit is provided with first esd protection circuit; The output weld pad of said second source circuit is provided with second esd protection circuit, and said first power circuit comprises the first output mos pipe, and said second source circuit comprises the second output mos pipe; The puncture voltage greater than said second esd protection circuit is pressed in the source leakage discharge of the said first output mos pipe, and the puncture voltage greater than said second esd protection circuit is pressed in the source leakage discharge of the said second output mos pipe.
The puncture voltage of said esd protection circuit is that esd protection circuit is realized the electrostatic protective function to power circuit, the voltage when starting working.The source leakage discharge of said metal-oxide-semiconductor is pressed and is referred to parasitic triode that metal-oxide-semiconductor is made up of source electrode, drain electrode and substrate between the two thereof the voltage when opening.
Be elaborated below in conjunction with accompanying drawing.
Embodiment one
With reference to shown in Figure 5; Present embodiment provides a kind of 1.8V single supply circuit 60; The input weld pad 61 of said 1.8V single supply circuit 60 is provided with esd protection circuit 63; Said 1.8V single supply circuit 60 comprises input metal-oxide-semiconductor 62, and the gate breakdown voltage of said input metal-oxide-semiconductor 62 is greater than the puncture voltage of said esd protection circuit 63.Wherein, said 1.8V single supply circuit 60 can be that operating voltage is any one integrated circuit of 1.8V, and it does not limit protection scope of the present invention.Said 1.8V single supply circuit 60 comprises a plurality of metal-oxide-semiconductors and other devices (as: electric capacity, inductance, resistance etc.), and wherein, the metal-oxide-semiconductor that links to each other with the input interface of 1.8V single supply circuit 60 is input metal-oxide-semiconductor 62.
Esd protection circuit described in the present embodiment 63 is a gate grounding NMOS transistor, its grid and source grounding GND, and its drain electrode connects input weld pad 61 and input metal-oxide-semiconductor 62.Need to prove that said esd protection circuit 63 can also adopt the electrostatic discharge protective circuit of other structures, like backward diode etc.
The operating voltage of said esd protection circuit 63 is 1.8V, and reverse breakdown voltage is 3V.
In order to prevent to import metal-oxide-semiconductor 62 when esd protection circuit 63 work or breakdown before the work, the gate breakdown voltage of said input metal-oxide-semiconductor 62 must be greater than the puncture voltage of esd protection circuit 63.At this moment, when electrostatic potential during,, can not damage input metal-oxide-semiconductor 62 though esd protection circuit 63 is not worked less than 3V yet; When electrostatic potential during greater than 3V, esd protection circuit 63 is started working, and also can avoid the electrostatic damage of 1.8V single supply circuit 60.
Owing to the gate breakdown voltage of metal-oxide-semiconductor along with the reducing of device size, operating voltage is that the gate breakdown voltage of the metal-oxide-semiconductor of 1.8V has been equal to or less than 3V.Particularly, when using operating voltage as the input metal-oxide-semiconductor 62 of 1.8V, its gate breakdown voltage has been less than or equal to the puncture voltage of esd protection circuit 63.
Therefore, import the operating voltage (be 1.8V) of the operating voltage of metal-oxide-semiconductor 62 in the present embodiment greater than 1.8V single supply circuit 60.Particularly, the operating voltage of said input metal-oxide-semiconductor 62 can be for 3.3V or 5V etc., so long as gate breakdown voltage gets final product greater than 3V.
In other embodiments of the invention; The operating voltage of said single supply circuit can also be worth for other; For the gate breakdown voltage of the input metal-oxide-semiconductor of realizing the single supply circuit puncture voltage, all can adopt operating voltage greater than the metal-oxide-semiconductor of the operating voltage of single supply circuit input metal-oxide-semiconductor as this single supply circuit greater than its esd protection circuit.As: when the operating voltage of single supply circuit was 3.3V, the puncture voltage of its esd protection circuit was 6V, so the gate breakdown voltage of the input metal-oxide-semiconductor of 3.3V single supply circuit is greater than 6V.Be equal to or less than 6V because operating voltage is the gate breakdown voltage of the metal-oxide-semiconductor of 3.3V, so the operating voltage of the input metal-oxide-semiconductor of 3.3V single supply circuit is greater than 3.3V.Particularly and since operating voltage be the gate breakdown voltage of metal-oxide-semiconductor of 5V greater than 6V, therefore the operating voltage of the input metal-oxide-semiconductor of said 3.3V single supply circuit can be 5V.
Embodiment two
With reference to shown in Figure 6; Present embodiment provides a kind of many power circuits; At least comprise 1.8V power circuit 70 (i.e. first power circuit) and 3.3V power circuit 80 (being the second source circuit), the operating voltage of said 1.8V power circuit 70 is 1.8V, and the voltage of said 3.3V power circuit 80 is 3.3V; The input weld pad 71 of said 1.8V power circuit 70 is provided with first esd protection circuit 73; The input weld pad 81 of said 3.3V power circuit 80 is provided with second esd protection circuit 83, and said 1.8V power circuit 70 comprises the first input metal-oxide-semiconductor 72, and the gate breakdown voltage of the said first input metal-oxide-semiconductor 72 is greater than the puncture voltage of said second esd protection circuit 83.
Wherein, said 3.3V power circuit 80 can be that operating voltage is any one integrated circuit of 3.3V.Said 1.8V power circuit 70 comprises a plurality of metal-oxide-semiconductors and other devices, and wherein, the metal-oxide-semiconductor that links to each other with the input interface of 1.8V power circuit 70 is the first input metal-oxide-semiconductor 72.Said 3.3V power circuit 80 comprises a plurality of metal-oxide-semiconductors and other devices, and wherein, the metal-oxide-semiconductor that links to each other with the input interface of 3.3 power circuits 80 is the second input metal-oxide-semiconductor 82.
Said first esd protection circuit 73 can be gate grounding NMOS transistor NMOS1, its grid and source grounding bus VSS, and its drain electrode connects the input weld pad 71 and the first input metal-oxide-semiconductor 72.Said second esd protection circuit 83 can be gate grounding NMOS transistor NMOS2, its grid and the equal earth bus VSS of drain electrode, and its drain electrode connects the input weld pad 81 and the second input metal-oxide-semiconductor 82.Need to prove that said first esd protection circuit 73 and second esd protection circuit 83 can also adopt the electrostatic discharge protective circuit of other structures, and the structure of first esd protection circuit 73 and second esd protection circuit 83 can be identical, also can be different.
The operating voltage of said nmos pass transistor NMOS1 is 1.8V, and reverse breakdown voltage is 3V.
The operating voltage of said nmos pass transistor NMOS2 is 3V, and reverse breakdown voltage is 6V.
For the input weld pad 81 of protecting 3.3V power circuit 80 when input weld pad 71 static discharges of 1.8V power circuit 70; The first input metal-oxide-semiconductor 72 is not by electrostatic breakdown; The gate breakdown voltage of the first input metal-oxide-semiconductor 72 described in the present embodiment need be greater than the puncture voltage of said second esd protection circuit 83, and the gate breakdown voltage of the promptly said first input metal-oxide-semiconductor 72 is greater than 6V.
Owing to the gate breakdown voltage of metal-oxide-semiconductor along with the reducing of device size, operating voltage is that the gate breakdown voltage of the metal-oxide-semiconductor of 1.8V has been equal to or less than 3V, operating voltage is that the gate breakdown voltage of the metal-oxide-semiconductor of 3.3V has been equal to or less than 6V.Particularly, when using operating voltage to import metal-oxide-semiconductor 72 as first of 1.8V, its gate breakdown voltage has been far smaller than the puncture voltage of second esd protection circuit 83, and the first input metal-oxide-semiconductor 72 certainly will be breakdown; When using operating voltage to import metal-oxide-semiconductor 72 as first of 3.3V, its gate breakdown voltage is equal to or less than the puncture voltage of second esd protection circuit 83, and the second input metal-oxide-semiconductor 82 also maybe be breakdown.
Therefore, the operating voltage of the first input metal-oxide-semiconductor 72 should be greater than the operating voltage (being 3.3V) of 3.3V power circuit 80 in the present embodiment.As: the operating voltage of the first input metal-oxide-semiconductor 72 can be 5V, as long as can guarantee the puncture voltage of the gate breakdown voltage of the first input metal-oxide-semiconductor 72 greater than second esd protection circuit 83.At this moment, the inevitable puncture voltage of the gate breakdown voltage of the first input metal-oxide-semiconductor 72 greater than first esd protection circuit 73.
In addition; The operating voltage of considering the second input metal-oxide-semiconductor 82 in the 3.3V power circuit 80 is 3.3V; Therefore its gate breakdown voltage, imports the puncture voltage of the gate breakdown voltage of metal-oxide-semiconductor 82 greater than second esd protection circuit 83 in order to guarantee second along with the puncture voltage that reduces to be equal to or less than second esd protection circuit 83 (being 6V) of device size so; The operating voltage of the said second input metal-oxide-semiconductor 82 can be greater than 3.3V, as: the operating voltage of the said second input metal-oxide-semiconductor 82 is 5V.
In sum, the first input metal-oxide-semiconductor 72 is identical with the operating voltage of the second input metal-oxide-semiconductor 82 described in the present embodiment, all is 5V.Need to prove; In other embodiments of the invention; The operating voltage of the said first input metal-oxide-semiconductor 72 and the second input metal-oxide-semiconductor 82 can also be inequality; As long as guarantee the puncture voltage of the gate breakdown voltage of the first input metal-oxide-semiconductor 72 greater than second esd protection circuit 83, the gate breakdown voltage of the second input metal-oxide-semiconductor 82 gets final product greater than the puncture voltage of second esd protection circuit 83.
In other embodiments of the invention; Said many power circuits can also comprise the 3rd power circuit (as: 5V power circuit); The input weld pad of said the 3rd power circuit is provided with the 3rd esd protection circuit; The operating voltage of said the 3rd power circuit is tertiary voltage (being 5V); Said tertiary voltage is greater than said second voltage, and the gate breakdown voltage of the gate breakdown voltage of the said first input metal-oxide-semiconductor, the said second input metal-oxide-semiconductor and the gate breakdown voltage of said the 3rd input metal-oxide-semiconductor all need be greater than the puncture voltages of said the 3rd esd protection circuit, thereby just can avoid three power circuits by electrostatic damage.That is, the operating voltage of the said first input metal-oxide-semiconductor is greater than tertiary voltage, and the operating voltage of the said second input metal-oxide-semiconductor is greater than tertiary voltage, and the operating voltage of said the 3rd input metal-oxide-semiconductor is greater than tertiary voltage.Particularly, the operating voltage of the said first input metal-oxide-semiconductor, the second input metal-oxide-semiconductor and the 3rd input metal-oxide-semiconductor can be identical, and is also can part identical, can also be different fully.
Embodiment three
With reference to shown in Figure 7; Present embodiment provides a kind of 1.8V single supply circuit 160; The output weld pad 161 of said 1.8V single supply circuit 160 is provided with esd protection circuit 163; Said 1.8V single supply circuit 160 comprises output mos pipe 162, and the puncture voltage greater than said esd protection circuit 163 is pressed in the source leakage discharge of said output mos pipe 162.Wherein, said 1.8V single supply circuit 160 can be that operating voltage is any one integrated circuit of 1.8V, and it does not limit protection scope of the present invention.Said 1.8V single supply circuit 160 comprises a plurality of metal-oxide-semiconductors and other devices (as: electric capacity, inductance, resistance etc.), and wherein, the metal-oxide-semiconductor that links to each other with the output interface of 1.8V single supply circuit 160 is an output mos pipe 162.
Esd protection circuit described in the present embodiment 163 is a gate grounding NMOS transistor, its grid and source grounding GND, and its drain electrode connects output weld pad 161 and output mos pipe 162.Need to prove that said esd protection circuit 163 can also adopt the electrostatic discharge protective circuit of other structures, like backward diode etc.
The operating voltage of said esd protection circuit 163 is 1.8V, and reverse breakdown voltage is 3V.
The output mos pipe also has the effect of the static of releasing usually; Its source leak and substrate in parasitic triode can the conducting release electrostatic; But the effect of releasing is very limited, when static surpasses its relieving capacity, will cause grid oxide layer to puncture, perhaps the damage of circuit such as contact hole; In order to prevent output mos pipe 162 when esd protection circuit 163 work or breakdown before the work, the source leakage discharge of said output mos pipe 162 is pressed must be greater than the puncture voltage of said esd protection circuit 163.At this moment, when electrostatic potential during,, can not damage output mos pipe 162 though esd protection circuit 63 is not worked less than 3V yet; When electrostatic potential during greater than 3V, esd protection circuit 63 is started working, and promptly static discharges through ESD circuit 163, and can be not directly source-drain electrode through output mos pipe 162 discharge, finally can avoid efferent duct 162 to receive electrostatic damage.
The operating voltage of said output metal-oxide-semiconductor can be greater than the operating voltage of single supply circuit.The operating voltage of output mos pipe 162 is greater than the operating voltage (being 1.8V) of 1.8V single supply circuit 160 in the present embodiment.Particularly, the operating voltage of said output mos pipe 162 can be 3.3V or 5V etc., gets final product greater than 3V so long as source leakage discharge is pressed.
In other embodiments of the invention; The operating voltage of said single supply circuit can also be worth for other; Press puncture voltage for the source leakage discharge of the output mos pipe of realizing the single supply circuit, all can adopt operating voltage greater than the metal-oxide-semiconductor of the operating voltage of single supply circuit output mos pipe as this single supply circuit greater than its esd protection circuit.
Embodiment four
With reference to shown in Figure 8; Present embodiment provides a kind of many power circuits; At least comprise 1.8V power circuit 170 (i.e. first power circuit) and 3.3V power circuit 180 (being the second source circuit); The operating voltage of said 1.8V power circuit 170 is 1.8V; The operating voltage of said 3.3V power circuit 180 is 3.3V, and the output weld pad 171 of said 1.8V power circuit 170 is provided with first esd protection circuit 173, and the output weld pad 181 of said 3.3V power circuit 180 is provided with second esd protection circuit 183; Said 1.8V power circuit 170 comprises the first output mos pipe 172; Said 3.3V power circuit 180 comprises the second output mos pipe 182, and the puncture voltage greater than said second esd protection circuit 183 is pressed in the source leakage discharge of the said first output mos pipe 172, and the puncture voltage greater than said second esd protection circuit 183 is pressed in the source leakage discharge of the said second output mos pipe 182.
Wherein, said 3.3V power circuit 180 can be that operating voltage is any one integrated circuit of 3.3V.Said 1.8V power circuit 170 comprises a plurality of metal-oxide-semiconductors and other devices, and wherein, the metal-oxide-semiconductor that links to each other with the output interface of 1.8V power circuit 170 is the first output mos pipe 172.Said 3.3V power circuit 180 comprises a plurality of metal-oxide-semiconductors and other devices, and wherein, the metal-oxide-semiconductor that links to each other with the output interface of 3.3 power circuits 180 is the second output mos pipe 182.
Said first esd protection circuit 173 can be gate grounding NMOS transistor NMOS1, its grid and source grounding bus VSS, and its drain electrode connects the output weld pad 171 and the first output mos pipe 172.Said second esd protection circuit 183 can be gate grounding NMOS transistor NMOS2, and its grid connects the output weld pad 181 and the second output mos pipe 182 with the equal earth bus VSS of drain electrode, its drain electrode.Need to prove that said first esd protection circuit 173 and second esd protection circuit 183 can also adopt the electrostatic discharge protective circuit of other structures, and the structure of first esd protection circuit 173 and second esd protection circuit 183 can be identical, also can be different.
The operating voltage of said nmos pass transistor NMOS1 is 1.8V, and reverse breakdown voltage is 3V.
The operating voltage of said nmos pass transistor NMOS2 is 3V, and reverse breakdown voltage is 6V.
For the output weld pad 181 of protecting 3.3V power circuit 180 when output weld pad 171 static discharges of 1.8V power circuit 170; The first output mos pipe 172 is not by electrostatic breakdown; The source leakage discharge pressure of the first output mos pipe 172 described in the present embodiment need be greater than the puncture voltage of said second esd protection circuit 183, and the source leakage discharge of the promptly said first output mos pipe 172 is pressed greater than 6V.
In addition; In order to prevent that the second output mos pipe 182 is when the work of second esd protection circuit 183 or breakdown before the work; The source leakage discharge of the said second output mos pipe 182 is pressed also must be greater than the puncture voltage of said second esd protection circuit 183, and the source leakage discharge of the promptly said second output mos pipe 182 is pressed greater than 6V.
Particularly, the operating voltage of the said first output mos pipe 172 can be greater than second voltage, and the operating voltage of the said second output mos pipe 182 can be greater than second voltage.As: the operating voltage of the first output mos pipe 172 is 5V, and the operating voltage of the second output mos pipe 182 also is 5V.
In sum, the first output mos pipe 172 is identical with the operating voltage of the second output mos pipe 182 described in the present embodiment, is 5V all.Need to prove; In other embodiments of the invention; The operating voltage of the said first output mos pipe 172 and the second output mos pipe 182 can also be inequality; Press the puncture voltage greater than second esd protection circuit 183 as long as guarantee the source leakage discharge of the first output mos pipe 172, the source leakage discharge of the second output mos pipe 182 presses the puncture voltage greater than second esd protection circuit 183 to get final product.
In other embodiments of the invention; Said many power circuits can also comprise the 3rd power circuit (as: 5V power circuit); The output weld pad of said the 3rd power circuit is provided with the 3rd esd protection circuit; The operating voltage of said the 3rd power circuit is tertiary voltage (being 5V); Said tertiary voltage is greater than said second voltage, the source leakage discharge of the said first output mos pipe is pressed, the source leakage discharge of the said second output mos pipe is pressed and the source leakage discharge of said the 3rd output mos pipe press all need be greater than the puncture voltage of said the 3rd esd protection circuit, thereby the output that just can avoid three power circuits is by electrostatic damage.That is, the operating voltage of the said first output mos pipe is greater than tertiary voltage, and the operating voltage of the said second output mos pipe is greater than tertiary voltage, and the operating voltage of said the 3rd output mos pipe is greater than tertiary voltage.Particularly, the operating voltage of the said first output mos pipe, the second output mos pipe and the 3rd output mos pipe can be identical, and is also can part identical, can also be different fully.
Though the present invention discloses as above with preferred embodiment, the present invention is defined in this.Any those skilled in the art are not breaking away from the spirit and scope of the present invention, all can do various changes and modification, so protection scope of the present invention should be as the criterion with claim institute restricted portion.
Claims (14)
1. a single supply circuit is characterized in that, the input weld pad of said single supply circuit is provided with esd protection circuit, and said single supply circuit comprises the input metal-oxide-semiconductor, and the gate breakdown voltage of said input metal-oxide-semiconductor is greater than the puncture voltage of said esd protection circuit.
2. single supply circuit as claimed in claim 1 is characterized in that the operating voltage of said input metal-oxide-semiconductor is greater than the operating voltage of single supply circuit.
3. single supply circuit as claimed in claim 2 is characterized in that, the operating voltage of said single supply circuit is 1.8V, and the operating voltage of said input metal-oxide-semiconductor is 3.3V or 5V.
4. single supply circuit as claimed in claim 2 is characterized in that, the operating voltage of said single supply circuit is 3.3V, and the operating voltage of said input metal-oxide-semiconductor is 5V.
5. a single supply circuit is characterized in that, the output weld pad of said single supply circuit is provided with esd protection circuit, and said single supply circuit comprises the output mos pipe, and the puncture voltage greater than said esd protection circuit is pressed in the source leakage discharge of said output mos pipe.
6. single supply circuit as claimed in claim 5 is characterized in that the operating voltage of said output metal-oxide-semiconductor is greater than the operating voltage of single supply circuit.
7. power circuit more than a kind; It is characterized in that comprise first power circuit and second source circuit at least, the operating voltage of said first power circuit is first voltage; The voltage of said second source circuit is second voltage; Said second voltage is greater than said first voltage, and the input weld pad of said first power circuit is provided with first esd protection circuit, and the input weld pad of said second source circuit is provided with second esd protection circuit; Said first power circuit comprises the first input metal-oxide-semiconductor; Said second source circuit comprises the second input metal-oxide-semiconductor, and the gate breakdown voltage of the said first input metal-oxide-semiconductor is greater than the puncture voltage of said second esd protection circuit, and the gate breakdown voltage of the said second input metal-oxide-semiconductor is greater than the puncture voltage of said second esd protection circuit.
8. many power circuits as claimed in claim 7 is characterized in that, the operating voltage of the said first input metal-oxide-semiconductor is greater than second voltage, and the operating voltage of the said second input metal-oxide-semiconductor is greater than second voltage.
9. many power circuits as claimed in claim 8 is characterized in that, the operating voltage of the said first input metal-oxide-semiconductor equals the operating voltage of the said second input metal-oxide-semiconductor.
10. like claim 8 or 9 described many power circuits, it is characterized in that said first voltage is 1.8V, said second voltage is 3.3V, and the operating voltage of the said first input metal-oxide-semiconductor is 5V, and the operating voltage of the said second input metal-oxide-semiconductor is 5V.
11. many power circuits as claimed in claim 7; It is characterized in that; Also comprise: the 3rd power circuit; The input weld pad of said the 3rd power circuit is provided with the 3rd esd protection circuit, and the operating voltage of said the 3rd power circuit is a tertiary voltage, and said tertiary voltage is greater than said second voltage; Said the 3rd power circuit comprises the 3rd input metal-oxide-semiconductor, and the gate breakdown voltage of the gate breakdown voltage of the said first input metal-oxide-semiconductor, the said second input metal-oxide-semiconductor and the gate breakdown voltage of said the 3rd input metal-oxide-semiconductor are all greater than the puncture voltage of said the 3rd esd protection circuit.
12. many power circuits as claimed in claim 11; It is characterized in that; The operating voltage of the said first input metal-oxide-semiconductor is greater than tertiary voltage, and the operating voltage of the said second input metal-oxide-semiconductor is greater than tertiary voltage, and the operating voltage of said the 3rd input metal-oxide-semiconductor is greater than tertiary voltage.
13. power circuit more than a kind; It is characterized in that comprise first power circuit and second source circuit at least, the operating voltage of said first power circuit is first voltage; The voltage of said second source circuit is second voltage; Said second voltage is greater than said first voltage, and the output weld pad of said first power circuit is provided with first esd protection circuit, and the output weld pad of said second source circuit is provided with second esd protection circuit; Said first power circuit comprises the first output mos pipe; Said second source circuit comprises the second output mos pipe, and the puncture voltage greater than said second esd protection circuit is pressed in the source leakage discharge of the said first output mos pipe, and the puncture voltage greater than said second esd protection circuit is pressed in the source leakage discharge of the said second output mos pipe.
14. many power circuits as claimed in claim 13 is characterized in that, the operating voltage of the said first output mos pipe is greater than second voltage, and the operating voltage of the said second output mos pipe is greater than second voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011104315238A CN102437563A (en) | 2011-12-20 | 2011-12-20 | Single-power circuit and multi-power circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011104315238A CN102437563A (en) | 2011-12-20 | 2011-12-20 | Single-power circuit and multi-power circuit |
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| CN102437563A true CN102437563A (en) | 2012-05-02 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2011104315238A Pending CN102437563A (en) | 2011-12-20 | 2011-12-20 | Single-power circuit and multi-power circuit |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103151014A (en) * | 2013-03-12 | 2013-06-12 | 上海贝岭股份有限公司 | Protection circuit for liquid crystal driver circuit |
| CN108181564A (en) * | 2016-12-07 | 2018-06-19 | 无锡同方微电子有限公司 | A kind of UIS test circuits and its test method |
| CN108352704A (en) * | 2016-07-26 | 2018-07-31 | 华为技术有限公司 | A kind of electrostatic discharge protective circuit |
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| US20040141269A1 (en) * | 2003-01-20 | 2004-07-22 | Nobutaka Kitagawa | Electrostatic discharge protection circuit device |
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| CN1115120A (en) * | 1994-03-31 | 1996-01-17 | 精工电子工业株式会社 | Semiconductor device and manufacturing method thereof |
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| CN1132937A (en) * | 1995-04-06 | 1996-10-09 | 财团法人工业技术研究院 | Electrostatic discharge protection circuit for integrated circuit |
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| CN103151014A (en) * | 2013-03-12 | 2013-06-12 | 上海贝岭股份有限公司 | Protection circuit for liquid crystal driver circuit |
| CN108352704A (en) * | 2016-07-26 | 2018-07-31 | 华为技术有限公司 | A kind of electrostatic discharge protective circuit |
| CN108352704B (en) * | 2016-07-26 | 2019-10-25 | 华为技术有限公司 | A kind of electrostatic discharge protective circuit |
| US10903646B2 (en) | 2016-07-26 | 2021-01-26 | Huawei Technologies Co., Ltd. | Electrostatic protection circuit |
| CN108181564A (en) * | 2016-12-07 | 2018-06-19 | 无锡同方微电子有限公司 | A kind of UIS test circuits and its test method |
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Application publication date: 20120502 |