CN102437249A - Preparation method of local contact back electric field of back region contact crystalline silicon solar cell - Google Patents
Preparation method of local contact back electric field of back region contact crystalline silicon solar cell Download PDFInfo
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- CN102437249A CN102437249A CN2011104304040A CN201110430404A CN102437249A CN 102437249 A CN102437249 A CN 102437249A CN 2011104304040 A CN2011104304040 A CN 2011104304040A CN 201110430404 A CN201110430404 A CN 201110430404A CN 102437249 A CN102437249 A CN 102437249A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention discloses a preparation method of a local contact back electric field of a back region contact crystalline silicon solar cell, and the method comprises the preparation of a frontage electrode of a cell on a silicon wafer and back surface vacuum evaporation plating of a metal aluminum back electric field. The method is characterized in that after the vacuum evaporation plating of the metal aluminum back electric field is carried out, the silicon wafer is continuously subjected to temperature rise, constant temperature, sintering and annealing. The method comprises the following steps: (1) enabling the temperature of the silicon water to rise from the constant temperature to 300-450 DEG C; (2) maintaining the constant temperature of the silicon wafer at the stage of 300-450 DEG C and keeping for the set time; (3) sintering the silicon wafer at the temperature of 500-650 DEG C, thus the back electric field local contact part of the silicon wafer forms ohmic contact, and the indicated ohmic contact is not influenced; and (4) reducing the temperature of the silicon wafer to the normal temperature. According to the method provided by the invention, the back surface annealing is finished by adopting a continuous mode; and the method has the advantages of continuous production, easiness in integral automation, real time monitoring, great yield and lowered production cost.
Description
Technical field
The present invention relates to a kind of preparation method who carries on the back regional contact crystalline silicon solar cell, is a kind of preparation method who carries on the back the local contact back of the body electric field of regional contact crystalline silicon solar cell specifically.
Background technology
In the prior art; The technical process that the crystal silicon solar battery back surface forms the local contact is that the vacuum evaporation metallic aluminium is carried out at the back side, forms back of the body electric field; Form ohmic contact through annealing way then, process the higher back of the body zone contact crystalline silicon solar cell of efficient.The equipment that annealing way wherein adopts in laboratory and batch process is airtight baking oven, anneals in the nitrogen atmosphere.Oven temperature is approximately 350～450 degrees centigrade; One batch about 20-30 of time minute; This technology mode exists in suitability for industrialized production, the shortcoming of the following aspects: 1, can not monitor in real time, just can know the technology controlling and process quality after one batch finished product battery comes out; If technology controlling and process goes wrong, one batch cell integrated poor quality then.2, intermittent work is unfavorable for automated production, and the mode that is fit to automated production is the continuity uninterrupted current waterline mode of production.3, production capacity is low, and cost is high, keep the temperature homogeneity of oven interior, stability, and the size of baking oven just has restriction, too big baking oven cost cost rise at double.
Summary of the invention
Technical problem to be solved by this invention is to overcome the defective that prior art exists, and has proposed a kind of preparation method who carries on the back regional contact crystalline silicon solar cell local contact back of the body electric field; Can be used in the suitability for industrialized production, adopt chain-type sintering furnace to accomplish back of the body flash annealing, the chain-type sintering furnace rta technique can be produced continuously; Be easy to integrated automation; Monitoring in real time, output is big, reduces production costs.
The present invention carries on the back the preparation method of regional contact crystalline silicon solar cell local contact back of the body electric field, comprising: the front electrode and the back side vacuum evaporation metal aluminum back electric field of preparation battery on silicon chip; It is characterized in that: behind the vacuum evaporation metal aluminum back electric field, in chain-type sintering furnace, silicon chip is carried out annealing in process continuously, concrete steps are following:
1. the temperature rise period, silicon temperature is risen to 300～450 degrees centigrade by normal temperature; 2. in the constant temperature stage, the time that silicon chip was kept stationary temperature and kept setting 300～450 degrees centigrade of stages, this stage makes that the silicon chip internal temperature is even, and back of the body electric field and silicon contact portion possess the condition that forms ohmic contact; 3. sintering stage; With silicon chip at 500～650 degree celsius temperature sintering; The faster effect of programming rate is good more; Under existing industrial condition, reach as far as possible and be warming up to 500～650 degrees centigrade rapidly, make the local contact portion of back of the body electric field of silicon chip form ohmic contact, and the ohmic contact that is just showing is unaffected.4. annealing stage is reduced to normal temperature with silicon temperature.
The inventive method adopts continuation mode to accomplish back of the body flash annealing, can produce continuously, is easy to integrated automation, monitoring in real time, and output is big, reduces production costs.
Embodiment:
Below in conjunction with embodiment, the present invention is elaborated.
Embodiment: back of the body surface passivation layer adopts single silicon oxide film, and the printing corrosive slurry is windowed, and carries out vacuum evaporation metal aluminum back electric field then, and its technical process is following:
1. silicon chip chemical cleaning, chemical corrosion method prepares suede structure, spreads preceding cleaning;
2. phosphorous diffusion forms PN junction.
3. remove edge and back of the body knot.For the mode that back of the body surface passivation contacts with back of the body electric field region, the back of the body knot that diffuses to form needs to remove.
4. carry out front plating antireflective film, front surface adopts PECVD or PVD cvd nitride silicon thin film to realize.
5. passivation layer is plated on back of the body surface, and back of the body surface adopts the mode of PECVD, APCVD, PVD or ALD to plate one deck passivation layer, silica, silicon nitride or aluminium oxide.
6. the mode of printing corrosive slurry or laser burn forms the local contact window of back of the body electric field on back of the body surface.Utilize the printing corrosive slurry to carry on the back the surface passivation layer part and window, technical maturity, controllability is good, process stabilizing, output is big, can use in the large-scale commercial applications production; Laser burn is removed the method for passivation layer, and technology is simple and easy adjustable, working stability, and production process can not produce the danger refuse, can be applied to large-scale production.These two kinds of methods, all saving time and cost than photoetching process Jinlin University.
7. silk screen printing front electrode and sintering.
8. back side vacuum evaporation metal aluminum back electric field.
9. in chain-type sintering furnace, back of the body electric field is carried out annealing in process, concrete steps are: 1. the temperature rise period, silicon temperature rises to 300～450 degrees centigrade rapidly by normal temperature; 2. constant temperature stage, silicon chip was kept stationary temperature and was kept 1-20 minute 300-450 degree centigrade of stage, and this stage makes that the silicon chip internal temperature is even, and back of the body electric field and silicon contact portion possess the condition of formation ohmic contact; 3. in the Fast Sintering stage, silicon chip is increased to 500-650 degree centigrade rapidly, make the local contact portion of back of the body electric field of silicon chip form ohmic contact, and the ohmic contact of front surface is unaffected.The crawler belt speed of chain-type sintering furnace is 0.1～0.2 meter/minute.Used sintering furnace was similar during chain-type sintering furnace that annealing in process is used and current battery were produced, and wherein the maximum temperature demand is low, inexpensive.Carry on the back the annealing way of electric field with respect to the baking oven mode, the inventive method is to produce continuously, and is compatible with existing finished product automation equipment; The battery sheet quantity of furnace interior is 1/10th to 1/20th of the interior battery sheet quantity of baking oven, can the on-line monitoring annealing process.
10. test stepping.
Claims (1)
1. carry on the back the preparation method of regional contact crystalline silicon solar cell local contact back of the body electric field, comprising: the front electrode and the back side vacuum evaporation metal aluminum back electric field of preparation battery on silicon chip; It is characterized in that: behind the vacuum evaporation metal aluminum back electric field, in chain-type sintering furnace to silicon chip heat up continuously, constant temperature, sintering and annealing, concrete steps are following:
1. the temperature rise period, silicon temperature rises to 300～450 degrees centigrade by normal temperature; 2. in the constant temperature stage, the time that silicon chip was kept stationary temperature and kept setting 300～450 degrees centigrade of stages, this stage makes that the silicon chip internal temperature is even, and back of the body electric field and silicon contact portion possess the condition that forms ohmic contact; 3. sintering stage; With silicon chip at 500～650 degree celsius temperature sintering; The faster effect of programming rate is good more; Under existing industrial condition, reach as far as possible and be warming up to 500～650 degrees centigrade rapidly, make the local contact portion of back of the body electric field of silicon chip form ohmic contact, and the ohmic contact that is just showing is unaffected; 4. annealing stage is reduced to normal temperature with silicon temperature.
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| CN2011104304040A CN102437249A (en) | 2011-12-21 | 2011-12-21 | Preparation method of local contact back electric field of back region contact crystalline silicon solar cell |
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| CN2011104304040A CN102437249A (en) | 2011-12-21 | 2011-12-21 | Preparation method of local contact back electric field of back region contact crystalline silicon solar cell |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104681663A (en) * | 2013-11-27 | 2015-06-03 | 韩华Qcells有限公司 | Solar Battery Manufacturing Technique And Solar Battery Processing Technique |
| CN104882515A (en) * | 2015-05-14 | 2015-09-02 | 苏州阿特斯阳光电力科技有限公司 | PERC solar cell sintering method |
| CN107482087A (en) * | 2017-09-27 | 2017-12-15 | 浙江晶科能源有限公司 | A kind of method of finished product solar cell annealing |
| CN111341877A (en) * | 2018-12-17 | 2020-06-26 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of double-sided PERC battery |
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| WO2001039281A1 (en) * | 1999-11-26 | 2001-05-31 | Delta Solar | Method for making a photovoltaic wafer or slice and cell comprising same |
| CN101488535A (en) * | 2008-10-22 | 2009-07-22 | 厦门市三安光电科技有限公司 | Preparation method of back electrode of solar cell chip |
| CN101872812A (en) * | 2010-05-26 | 2010-10-27 | 广东志成冠军集团有限公司 | Preparation method of aluminum back electric field of amorphous-silicon/ monocrystalline silicon heterojunction solar battery |
| CN101950737A (en) * | 2009-11-23 | 2011-01-19 | 杭州士兰集成电路有限公司 | Production method of P-type silicon substrate back metallization |
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2011
- 2011-12-21 CN CN2011104304040A patent/CN102437249A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001039281A1 (en) * | 1999-11-26 | 2001-05-31 | Delta Solar | Method for making a photovoltaic wafer or slice and cell comprising same |
| CN101488535A (en) * | 2008-10-22 | 2009-07-22 | 厦门市三安光电科技有限公司 | Preparation method of back electrode of solar cell chip |
| CN101950737A (en) * | 2009-11-23 | 2011-01-19 | 杭州士兰集成电路有限公司 | Production method of P-type silicon substrate back metallization |
| CN101872812A (en) * | 2010-05-26 | 2010-10-27 | 广东志成冠军集团有限公司 | Preparation method of aluminum back electric field of amorphous-silicon/ monocrystalline silicon heterojunction solar battery |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104681663A (en) * | 2013-11-27 | 2015-06-03 | 韩华Qcells有限公司 | Solar Battery Manufacturing Technique And Solar Battery Processing Technique |
| CN104681663B (en) * | 2013-11-27 | 2018-09-07 | 韩华Qcells有限公司 | The manufacturing process of solar cell and the treatment process of solar cell |
| CN104882515A (en) * | 2015-05-14 | 2015-09-02 | 苏州阿特斯阳光电力科技有限公司 | PERC solar cell sintering method |
| CN107482087A (en) * | 2017-09-27 | 2017-12-15 | 浙江晶科能源有限公司 | A kind of method of finished product solar cell annealing |
| CN111341877A (en) * | 2018-12-17 | 2020-06-26 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of double-sided PERC battery |
| CN111341877B (en) * | 2018-12-17 | 2024-04-16 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of double-sided PERC battery |
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Application publication date: 20120502 |