CN102427305A - Single-phase half-bridge five-level inverter and application circuit thereof - Google Patents
Single-phase half-bridge five-level inverter and application circuit thereof Download PDFInfo
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- CN102427305A CN102427305A CN2011103147822A CN201110314782A CN102427305A CN 102427305 A CN102427305 A CN 102427305A CN 2011103147822 A CN2011103147822 A CN 2011103147822A CN 201110314782 A CN201110314782 A CN 201110314782A CN 102427305 A CN102427305 A CN 102427305A
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Abstract
The invention provides a single-phase half-bridge five-level inverter and an application circuit thereof. The single-phase half-bridge five-level inverter comprises eight switching tubes and eight diodes, and does not comprise clamping diodes and flying capacitors in the prior art. In the prior art, the clamping diodes in the five-level inverter cannot be omitted because the diodes not only provide passages for current and prevent short circuit of capacitors. In the five-level inverter provided by the invention, passages are provided for current by utilizing diodes which are reversely connected with the eight switching tubes in parallel, so that the short circuit of the capacitors is prevented. Therefore, the inverter has fewer semiconductor devices, lower loss, higher efficiency, small volume and low cost. In the prior art, the flying capacitors are used for generating multiple levels, however, the capacitors have higher cost; and in the embodiment of the invention, the multiple levels are generated without using the capacitors, thus the inverter has low cost.
Description
Technical field
The present invention relates to electric and electronic technical field, particularly a kind of single-phase semi-bridge five-electrical level inverter and application circuit thereof.
Background technology
The big capacity occasion of middle pressure, multi-electrical level inverter is widely used, and present five-electrical level inverter mainly is diode-clamped and striding capacitance type structure.Introduce respectively below.
Referring to Fig. 1 a, this figure is the five-electrical level inverter topological diagram of the diode-clamped that provides in the prior art.
Shown in Fig. 1 a is the topological structure of half-bridge five-electrical level inverter.Diode is used to each switching tube and carries out voltage clamp.For example, the first diode DB1 is used for the voltage clamp of switch transistor T 1 lower end is positioned at the lower end of first capacitor C 1; The second diode DB2 is used for the voltage clamp of switch transistor T 5 lower ends is positioned at the lower end of first capacitor C 1.Other diodes DB3, DB4, DB5 and DB6 are similar, repeat no more at this.
Because clamping diode need be blocked many times of level voltages, need the diode series connection of a plurality of same nominal values usually, shown in Fig. 1 b, diode DB21, DB22 and DB23 series connection are equivalent to the diode DB2 among Fig. 1 a.These three diodes of DB21, DB22 and DB23 are together in series and bear the voltage that DB2 bears among Fig. 1 a jointly.Because the dispersiveness of diode and the influence of stray parameter, the pressure that the diode that nominal value is identical can bear be difference to some extent also, being together in series like this to cause the diode two ends overvoltage that has.Therefore, need all press measure and very big RC to absorb circuit, but will cause systems bulky like this, cost increases.
Therefore, in order to solve the problem that Fig. 1 b exists, a kind of corrective measure has been proposed, shown in Fig. 1 c.Used the same of the used switching tube quantity of this topology and Fig. 1 a, this topology can be clamped at each diode voltage within single level voltage, and shown in Fig. 1 c, all diodes do not have the situation of two series connection.In the more inverter of level number, bigger superiority is arranged.But the shortcoming of sort circuit is that the quantity of clamping diode is too many.
Referring to Fig. 2, this figure is the striding capacitance type five-electrical level inverter topological diagram that provides in the prior art.
Electric capacity in the topology shown in Figure 2 can play all the effect of pressing, and is more but shortcoming is the electric capacity number of utilization.
In sum, two kinds of five-electrical level inverter topologys of the prior art are all used more semiconductor device, cause volume bigger, and loss is more, and efficient is lower.
Summary of the invention
The technical problem that the present invention will solve provides a kind of single-phase semi-bridge five-electrical level inverter and application circuit thereof, and the semiconductor number of use is less, and loss is less, and efficient is higher, and cost is low.
The present invention provides a kind of single-phase semi-bridge five-electrical level inverter, comprising: first switching tube, second switch pipe, the 3rd switching tube, the 4th switching tube, the 5th switching tube, the 6th switching tube, the 7th switching tube and the 8th switching tube;
Diode of each said switching tube reverse parallel connection;
The anode of DC power supply is connected the negative terminal of DC power supply through first electric capacity, second electric capacity, the 3rd electric capacity and the 4th electric capacity of series connection successively;
First end of first switching tube connects first end of first electric capacity, and second end of first switching tube connects first node;
First end of second switch pipe connects first node, and second end of second switch pipe connects first end of second electric capacity;
First end of the 3rd switching tube connects first node, and second end of the 3rd switching tube connects Section Point;
First end of the 4th switching tube connects Section Point, and second end of the 4th switching tube connects first end of the 3rd electric capacity;
First end of the 5th switching tube connects Section Point, and second end of the 5th switching tube connects the 3rd node;
First end of the 6th switching tube connects the 3rd node, and second end of the 6th switching tube connects the 4th node;
First end of the 7th switching tube connects first end of the 4th electric capacity, and second end of the 7th switching tube connects the 4th node;
First end of the 8th switching tube connects the 4th node, and second end of the 8th switching tube connects second end of the 4th electric capacity;
The 3rd node is as an ac output end of this inverter, and second end of the 4th switching tube is as another ac output end of this inverter.
Preferably, said switching tube is the IGBT pipe, and said first end is a collector electrode, and second end is an emitter.
Preferably, also comprise first inductance, second inductance and electric capacity;
Said the 3rd node is connected the common port of second electric capacity and the 3rd electric capacity through first inductance, electric capacity and second inductance of series connection successively.
Preferably, five level operation modes that this single-phase semi-bridge five-electrical level inverter is corresponding are respectively:
First mode: first switching tube, the 3rd switching tube and the 5th switching tube conducting, rest switch Guan Jun ends;
Second mode: second switch pipe, the 3rd switching tube and the 5th switching tube conducting, rest switch Guan Jun ends;
The 3rd mode: the 4th switching tube and the 5th switching tube conducting, rest switch Guan Jun ends;
The 4th mode: the 6th switching tube and the 7th switching tube conducting, rest switch Guan Jun ends;
The 5th mode: the 6th switching tube and the 8th switching tube conducting, rest switch Guan Jun ends.
Preferably,
The conducting sequential of said first switching tube compares generation by sinusoidal wave and first triangular wave, and said sine wave is during greater than said first triangular wave, the said first switching tube conducting, on the contrary end;
The conducting sequential of said second switch pipe compares generation by said sine wave and first triangular wave and second triangular wave, and said sine wave is during greater than said second triangular wave and less than said first triangular wave, the conducting of said second switch pipe, on the contrary end;
The conducting sequential of said the 3rd switching tube compares generation by said sine wave and said second triangular wave, and said sine wave is during greater than said second triangular wave, said the 3rd switching tube conducting, on the contrary end;
The conducting sequential of said the 4th switching tube compares generation by said sine wave and said second triangular wave, and said sine wave is during less than said second triangular wave, said the 4th switching tube conducting, on the contrary end;
The conducting sequential of the 5th switching tube and the conducting sequential of the 4th switching tube are exchanged about the positive half cycle and the negative half period of sine wave;
The conducting sequential of the 6th switching tube and the conducting sequential of the 3rd switching tube are exchanged about the positive half cycle and the negative half period of sine wave;
The conducting sequential of the 7th switching tube and the conducting sequential of second switch pipe are exchanged about the positive half cycle and the negative half period of sine wave;
The conducting sequential of the 8th switching tube and the conducting sequential of first switching tube are exchanged about the positive half cycle and the negative half period of sine wave.
The present invention also provides a kind of application circuit of said inverter, comprises two said single-phase semi-bridge five-electrical level inverters, is respectively the first single-phase semi-bridge five-electrical level inverter and the second single-phase semi-bridge five-electrical level inverter;
First end of first switching tube in the first single-phase semi-bridge five-electrical level inverter and the second single-phase semi-bridge five-electrical level inverter links together and all is connected the anode of DC power supply;
Second end of the 8th switching tube in the first single-phase semi-bridge five-electrical level inverter and the second single-phase semi-bridge five-electrical level inverter links together and all is connected the negative terminal of direct voltage;
In the first single-phase semi-bridge five-electrical level inverter and the second single-phase semi-bridge five-electrical level inverter: second end of second switch pipe all links together and all is connected the common port of first electric capacity and second electric capacity; Second end of the 4th switching tube all connects the common port of second electric capacity and the 3rd electric capacity; First end of the 7th switching tube all links together and connects the common port of the 3rd electric capacity and the 4th electric capacity;
The 3rd node of the 3rd node of the first single-phase semi-bridge five-electrical level inverter and the second single-phase semi-bridge five-electrical level inverter is respectively as two ac output ends of this application circuit.
Preferably, the said first single-phase semi-bridge five-electrical level inverter is modulated by the primary sinusoid, and the said second single-phase semi-bridge five-electrical level inverter is modulated by second sine wave;
The said primary sinusoid is spent with the second sinusoidal wave phasic difference mutually 180.
The present invention also provides a kind of application circuit of said inverter, comprises three said single-phase semi-bridge five-electrical level inverters, is respectively the first single-phase semi-bridge five-electrical level inverter, the second single-phase semi-bridge five-electrical level inverter and the 3rd single-phase semi-bridge five-electrical level inverter;
First end of first switching tube in the first single-phase semi-bridge five-electrical level inverter, the second single-phase semi-bridge five-electrical level inverter and the 3rd single-phase semi-bridge five-electrical level inverter links together and all is connected the anode of DC power supply;
Second end of the 8th switching tube in the first single-phase semi-bridge five-electrical level inverter, the second single-phase semi-bridge five-electrical level inverter and the 3rd single-phase semi-bridge five-electrical level inverter links together and all is connected the negative terminal of direct voltage;
In the first single-phase semi-bridge five-electrical level inverter, the second single-phase semi-bridge five-electrical level inverter and the 3rd single-phase semi-bridge five-electrical level inverter: second end of second switch pipe all links together and all is connected the common port of first electric capacity and second electric capacity; Second end of the 4th switching tube all connects the common port of second electric capacity and the 3rd electric capacity; First end of the 7th switching tube all links together and connects the common port of the 3rd electric capacity and the 4th electric capacity;
The 3rd node of the 3rd node of the 3rd node of the first single-phase semi-bridge five-electrical level inverter, the second single-phase semi-bridge five-electrical level inverter and the 3rd single-phase semi-bridge five-electrical level inverter is respectively as three ac output ends of this application circuit.
Preferably, the said first single-phase semi-bridge five-electrical level inverter is modulated by the primary sinusoid, and the second single-phase semi-bridge five-electrical level inverter is modulated by second sine wave, and the 3rd single-phase semi-bridge five-electrical level inverter is modulated by the 3rd sine wave;
The primary sinusoid, second phase place sinusoidal wave and the 3rd sine wave differ 120 degree successively.
The present invention also provides a kind of application circuit of said inverter; Comprising four said single-phase semi-bridge five-electrical level inverters, is respectively the first single-phase semi-bridge five-electrical level inverter, the second single-phase semi-bridge five-electrical level inverter, the 3rd single-phase semi-bridge five-electrical level inverter and the 4th single-phase semi-bridge five-electrical level inverter;
First end of first switching tube in the first single-phase semi-bridge five-electrical level inverter, the second single-phase semi-bridge five-electrical level inverter, the 3rd single-phase semi-bridge five-electrical level inverter and the 4th single-phase semi-bridge five-electrical level inverter links together and all is connected the anode of DC power supply;
Second end of the 8th switching tube in the first single-phase semi-bridge five-electrical level inverter, the second single-phase semi-bridge five-electrical level inverter, the 3rd single-phase semi-bridge five-electrical level inverter and the 4th single-phase semi-bridge five-electrical level inverter links together and all is connected the negative terminal of direct voltage;
In the first single-phase semi-bridge five-electrical level inverter, the second single-phase semi-bridge five-electrical level inverter, the 3rd single-phase semi-bridge five-electrical level inverter and the 4th single-phase semi-bridge five-electrical level inverter: second end of second switch pipe all links together and all is connected the common port of first electric capacity and second electric capacity; Second end of the 4th switching tube all connects the common port of second electric capacity and the 3rd electric capacity; First end of the 7th switching tube all links together and connects the common port of the 3rd electric capacity and the 4th electric capacity;
The 3rd node of the 3rd node of the 3rd node of the first single-phase semi-bridge five-electrical level inverter, the second single-phase semi-bridge five-electrical level inverter, the 3rd single-phase semi-bridge five-electrical level inverter and the Section Point of the 4th single-phase semi-bridge five-electrical level inverter are respectively as four ac output ends of this application circuit.
Compared with prior art, the present invention has the following advantages:
Single-phase semi-bridge five-electrical level inverter provided by the invention comprises eight switching tubes and eight diodes; Do not comprise clamping diode of the prior art and striding capacitance; It is because these diodes not only provide path for electric current that five-electrical level inverter of the prior art cannot remove clamping diode; And played electric capacity not by the effect of short circuit; And five-electrical level inverter provided by the invention utilizes the diode of eight switching tube self reverse parallel connections just can path be provided for electric current, and guarantees that electric capacity is not by the effect of short circuit.Guarantee that like this semiconductor device in the whole inverter is less, loss is less, and efficient is higher, and volume is also little, and then cost is also low.Striding capacitance of the prior art is in order to generate many level, still because the cost of electric capacity own is higher; And the embodiment of the invention gives up with electric capacity and generates many level, and cost is low.
Description of drawings
Fig. 1 a is the five-electrical level inverter topological diagram of the diode-clamped that provides in the prior art;
Fig. 1 b is the five-electrical level inverter topological diagram of the another kind of diode-clamped that provides in the prior art;
Fig. 1 c is the five-electrical level inverter topological diagram of another diode-clamped of providing in the prior art;
Fig. 2 is the striding capacitance type five-electrical level inverter topological diagram that provides in the prior art;
Fig. 3 is the single-phase semi-bridge five-electrical level inverter topological diagram that the embodiment of the invention provides;
Fig. 4 is that the single-phase semi-bridge five-electrical level inverter that the embodiment of the invention provides is in the corresponding topological diagram of first mode;
Fig. 5 is that the single-phase semi-bridge five-electrical level inverter that the embodiment of the invention provides is in the corresponding topological diagram of second mode;
Fig. 6 is that the single-phase semi-bridge five-electrical level inverter that the embodiment of the invention provides is in the corresponding topological diagram of the 3rd mode;
Fig. 7 is that the single-phase semi-bridge five-electrical level inverter that the embodiment of the invention provides is in the corresponding topological diagram of the 4th mode;
Fig. 8 is that the single-phase semi-bridge five-electrical level inverter that the embodiment of the invention provides is in the corresponding topological diagram of the 5th mode;
Fig. 9 is the conducting sequential chart of eight switches in the single-phase semi-bridge five-electrical level inverter that provides of the embodiment of the invention;
Figure 10 is the single-phase semi-bridge five-electrical level inverter topology unit isoboles that the embodiment of the invention provides;
Figure 11 is the single-phase full bridge five-electrical level inverter topological diagram that the embodiment of the invention provides;
Figure 12 is the three-phase three-wire system five-electrical level inverter topological diagram that the embodiment of the invention provides;
Figure 13 is the three-phase four-wire system five-electrical level inverter topological diagram that the embodiment of the invention provides.
Embodiment
For make above-mentioned purpose of the present invention, feature and advantage can be more obviously understandable, does detailed explanation below in conjunction with the accompanying drawing specific embodiments of the invention.
Referring to Fig. 3, this figure is the single-phase semi-bridge five-electrical level inverter topological diagram that the embodiment of the invention provides.
The single-phase semi-bridge five-electrical level inverter that the embodiment of the invention provides comprises: first switch transistor T 1, second switch pipe T2, the 3rd switch transistor T 3, the 4th switch transistor T 4, the 5th switch transistor T 5, the 6th switch transistor T 6, the 7th switching tube T7 and the 8th switching tube T8;
Diode of each said switching tube reverse parallel connection; As shown in Figure 3, T1-T8 is reverse parallel connection D1-D8 respectively.
First capacitor C 1 of the anode of DC power supply through series connection successively, second capacitor C 2, the 3rd capacitor C 3 are connected the negative terminal of DC power supply with the 4th capacitor C 4;
First end of first switch transistor T 1 connects first end (being the common port of C1 and C2) of first capacitor C 1, and second end of first switch transistor T 1 connects first node m;
First end of second switch pipe T2 connects first node m, and second end of second switch pipe T2 connects first end of second capacitor C 2;
First end of the 3rd switch transistor T 3 connects first node m, and second end of the 3rd switch transistor T 3 connects Section Point s;
First end of the 4th switch transistor T 4 connects Section Point s, and second end of the 4th switch transistor T 4 connects first end of the 3rd capacitor C 3;
First end of the 5th switch transistor T 5 connects Section Point s, and second end of the 5th switch transistor T 5 connects the 3rd node a;
First end of the 6th switch transistor T 6 connects the 3rd node a, and second end of the 6th switch transistor T 6 connects the 4th node t;
First end of the 7th switching tube T7 connects first end of the 4th capacitor C 4, and second end of the 7th switching tube T7 connects the 4th node t;
First end of the 8th switching tube T8 connects the 4th node t, and second end of the 8th switching tube T8 connects second end of the 4th capacitor C 4.
The 3rd node a is as an ac output end of this inverter, and second end of the 4th switch transistor T 4 is as another ac output end of this inverter.
Need to prove that the inverter that the embodiment of the invention provides is a five-electrical level inverter, five-electrical level inverter can provide five level, so need four identical capacitances in series of appearance value that five level are provided.The N electrical level inverter needs the identical electric capacity of (N-1) individual appearance value that level is provided.As shown in the figure, four electric capacity among the present invention are respectively C1, C2, C3 and C4.
The single-phase semi-bridge five-electrical level inverter that the embodiment of the invention provides comprises eight switching tubes and eight diodes; Do not comprise clamping diode of the prior art and striding capacitance; It is because these diodes not only provide path for electric current that five-electrical level inverter of the prior art cannot remove clamping diode; And played electric capacity not by the effect of short circuit; And the diode that the five-electrical level inverter that the embodiment of the invention provides utilizes eight switching tube self reverse parallel connections just can be for electric current provides path, and guarantees that electric capacity is not by the effect of short circuit.Guarantee that like this semiconductor device in the whole inverter is less, loss is less, and efficient is higher, and volume is also little, and then cost is also low.
For the advantage of the embodiment of the invention is described better, why need there be clamping diode in the explanation five-electrical level inverter of the prior art below.With the circuit shown in Fig. 1 a is example, and the common port of C1 and C2 will pass through DB1, T2, T3 and T4 and arrive a when a flows to electric current.Be that clamping diode DB1 is that electric current provides path.When a when the common port of C1 and C2 flows out electric current, pass through the common port of T5 and DB2 arrival C1 and C2.Be that clamping diode DB2 is that electric current provides path.It is understandable that, can replace with lead for path is provided for electric current, suppose to remove DB1 and DB2, from circuit diagram, can find out, when the T1 conducting, the two ends of C1 will be by short circuit, and obviously this is irrational.Therefore, clamping diode of the prior art is essential.
And the diode of switching tube self reverse parallel connection can play the effect of clamping diode in the prior art in the embodiment of the invention; For example, the diode D3 of T3 reverse parallel connection is both for electric current provides path, and the common port of C1 and C2 is when a flows to electric current; In the time of can guaranteeing the T1 conducting again, C1 is not by short circuit.
Though and the another kind of topology that prior art provides has been removed clamping diode, the striding capacitance that increases is in order to generate many level, because the cost of electric capacity own is higher; And the embodiment of the invention gives up with electric capacity and generates many level, and cost is low.
Need to prove, preferably, more than eight switching tubes can manage for IGBT, MOSFET pipe, IGCT pipe or IEGT pipe.When said switching tube was the IGBT pipe, said first end was a collector electrode, and second end is an emitter.It is understandable that, more than eight switching tubes also can select the switching tube of other types.
Need to prove that the diode of above switching tube reverse parallel connection can be diode independently, also can be the diode that integrates with the switching tube encapsulation.
Need to prove that said single-phase semi-bridge five-electrical level inverter can also comprise first inductance L 1, second inductance L 2 and the capacitor C;
Said the 3rd node a is through first inductance L 1 of series connection successively, capacitor C is connected second capacitor C 2 with second inductance L 2 second end, i.e. node n.
The single-phase semi-bridge five-electrical level inverter that the embodiment of the invention provides, every kind of operation mode has only two switching tube conductings.Come five kinds of operation modes are carried out labor below in conjunction with accompanying drawing.
Referring to Fig. 4, this figure is that the single-phase semi-bridge five-electrical level inverter that the embodiment of the invention provides is in the corresponding topological diagram of first mode.
First mode: first switch transistor T 1, the 3rd switch transistor T 3 and 5 conductings of the 5th switch transistor T, rest switch Guan Jun ends; The switching tube of not conducting illustrates with fine line in the drawings, and the path of conducting illustrates with heavy line.
When the 3rd node a flowed out electric current, path of current was: T1-T3-T5-L1-V
G-L2-C2-C1-T1.When the 3rd node a flow to electric current, path of current was: D5-D3-D1-C1-C2-L2-V
G-L1-D5.
Referring to Fig. 5, this figure is that the single-phase semi-bridge five-electrical level inverter that the embodiment of the invention provides is in the corresponding topological diagram of second mode.
Second mode: second switch pipe T2, the 3rd switch transistor T 3 and 5 conductings of the 5th switch transistor T, rest switch Guan Jun ends; The switching tube of not conducting illustrates with fine line in the drawings, and the path of conducting illustrates with heavy line.
When the 3rd node a flowed out electric current, path of current was: D2-T3-T5-L1-V
G-L2-C2-D2.When the 3rd node a flow to electric current, path of current was: D5-D3-T2-C2-L2-V
G-L1-D5.
Referring to Fig. 6, this figure is that the single-phase semi-bridge five-electrical level inverter that the embodiment of the invention provides is in the corresponding topological diagram of the 3rd mode.
The 3rd mode: the 4th switch transistor T 4 and 5 conductings of the 5th switch transistor T, rest switch Guan Jun ends; The switching tube of not conducting illustrates with fine line in the drawings, and the path of conducting illustrates with heavy line.
When the 3rd node a flowed out electric current, path of current was: T5-D4-L1-V
G-L2-T5.When the 3rd node a flow to electric current, path of current was: D5-T4-L2-V
G-L1-D5.
Referring to Fig. 7, this figure is that the single-phase semi-bridge five-electrical level inverter that the embodiment of the invention provides is in the corresponding topological diagram of the 4th mode.
The 4th mode: the 6th switch transistor T 6 and the 7th switching tube T7 conducting, rest switch Guan Jun ends; Wherein do not have the switching tube of pulsed drive to illustrate with fine line in the drawings, have the switching tube of pulsed drive and the path of conducting to illustrate with heavy line.Be that T1, T2, T3, T4, T5 and T8 among Fig. 7 all is not conductings, T1, T2, T3, T5 and T8 do not have pulsed drive.And T4 has pulsed drive, and this is fairly simple for the Pulse Design that makes T4, is the pulse signal that T4 provides high level in this mode.
When the 3rd node a flowed out electric current, path of current was: T7-D6-L1-V
G-L2-C3-T7.When the 3rd node a flow to electric current, path of current was: T6-D7-C3-L2-V
G-L1-T6.
Referring to Fig. 8, this figure is that the single-phase semi-bridge five-electrical level inverter that the embodiment of the invention provides is in the corresponding topological diagram of the 5th mode.
The 5th mode: the 6th switch transistor T 6 and the 8th switching tube T8 conducting, rest switch Guan Jun ends.Wherein do not have the switching tube of pulsed drive to illustrate with fine line in the drawings, have the switching tube of pulsed drive and the path of conducting to illustrate with heavy line.Be that T1, T2, T3, T4, T5 and T7 among Fig. 8 all is not conductings, T1, T2, T3, T5 and T7 do not have pulsed drive.And T4 has pulsed drive, and this is fairly simple for the Pulse Design that makes T4, is the pulse signal that T4 provides high level in this mode.
When the 3rd node a flowed out electric current, path of current was: D8-D6-L1-V
G-L2-C3-C4-D8.When the 3rd node a flow to electric current, path of current was: T6-T8-C4-C3-L2-V
G-L1-T6.
Referring to Fig. 9, this figure is the conducting sequential chart of eight switches in the single-phase semi-bridge five-electrical level inverter that provides of the embodiment of the invention.
S1-S8 among Fig. 9 is respectively the gate drive signal of switch transistor T 1-T8.When the drive signal of switching tube is high level, the conducting of corresponding switch pipe, when the drive signal of switching tube was low level, the corresponding switch pipe ended.
Van among Fig. 9 is the voltage between node a and the node n among Fig. 3.
The waveform of upper end comprises two triangular waves (being respectively the first triangular wave A and the second triangular wave B) and a sinusoidal wave Z among Fig. 9, and this sinusoidal wave Z and two triangular waves compare and produce S1-S8.
The said first triangular wave A, the second triangular wave B have identical frequency and identical amplitude, and the trough of the said first triangular wave A equals the crest of the second triangular wave B.
The conducting sequential of said first switch transistor T 1 compares generation by the sinusoidal wave Z and the first triangular wave A, and said sinusoidal wave Z is during greater than the said first triangular wave A, 1 conducting of said first switch transistor T, on the contrary end;
The conducting sequential of said second switch pipe T2 compares generation by said sinusoidal wave Z and the first triangular wave A and the second triangular wave B; Said sinusoidal wave Z is during greater than the said second triangular wave B and less than the said first triangular wave A; Said second switch pipe T2 conducting, on the contrary end;
The conducting sequential of said the 3rd switch transistor T 3 compares generation by said sinusoidal wave Z and the said second triangular wave B, and said sinusoidal wave Z is during greater than the said second triangular wave B, 3 conductings of said the 3rd switch transistor T, on the contrary end;
The conducting sequential of said the 4th switch transistor T 4 compares generation by said sinusoidal wave Z and the said second triangular wave B, and said sinusoidal wave Z is during less than the said second triangular wave B, 4 conductings of said the 4th switch transistor T, on the contrary end;
The conducting sequential of the conducting sequential of the 5th switch transistor T 5 and the 4th switch transistor T 4 is exchanged about positive half cycle and the negative half period of sinusoidal wave Z;
The conducting sequential of the conducting sequential of the 6th switch transistor T 6 and the 3rd switch transistor T 3 is exchanged about positive half cycle and the negative half period of sinusoidal wave Z;
The conducting sequential of the conducting sequential of the 7th switching tube T7 and second switch pipe T2 is exchanged about positive half cycle and the negative half period of sinusoidal wave Z;
The conducting sequential of the conducting sequential of the 8th switching tube T8 and first switch transistor T 1 is exchanged about positive half cycle and the negative half period of sinusoidal wave Z.
What above embodiment provided all is single-phase semi-bridge five-electrical level inverters, it is understandable that, can form single-phase full bridge, three-phase three-wire system and three-phase four-wire system topology by single-phase semi-bridge.Introduce respectively below.
Referring to Figure 10, this figure is the single-phase semi-bridge five-electrical level inverter topology unit isoboles that the embodiment of the invention provides.
The 3rd node a in the single-phase semi-bridge five-electrical level inverter among Fig. 3 is defined as the AC exit of topology unit; First end of T1 is defined as the DC+ exit of topology unit; Second end of T8 is defined as the DC-exit of topology unit; Second end of T2 is defined as the M1 exit of topology unit, and second end of T4 is defined as the M2 exit of topology unit, and first end of T7 is defined as the M3 exit of topology unit.
C1 in the M1 exit connection layout 3 of topology unit and the common port of C2, C2 in the M2 exit connection layout 3 and the common port of C3, C3 in the M3 exit connection layout 3 and the common port of C4.
Topology unit sketch map after the single-phase semi-bridge five-electrical level inverter equivalence among Fig. 3 is shown in figure 10.
Referring to Figure 11, this figure is the single-phase full bridge five-electrical level inverter topological diagram that the embodiment of the invention provides.
The single-phase full bridge five-electrical level inverter comprises two said single-phase semi-bridge five-electrical level inverters, is respectively the first single-phase semi-bridge five-electrical level inverter and the second single-phase semi-bridge five-electrical level inverter; With these two single-phase semi-bridge five-electrical level inverter equivalences is topology unit shown in Figure 10.
Shown in figure 11, the DC+ end of two topology unit links together, and connects the anode of DC power supply then; The DC-end links together, and connects the negative terminal of DC power supply then.
The M1 of two topology unit links together, and connects the common port of C1 and C2 then; M2 links together, and connects the common port of C2 and C3 then; M3 links together, and connects the common port of C3 and C4 then.
The AC of two topology unit is two ac output ends of this single-phase full bridge five-electrical level inverter.
Need to prove that the said first single-phase semi-bridge five-electrical level inverter is modulated by the primary sinusoid, the said second single-phase semi-bridge five-electrical level inverter is modulated by second sine wave;
The said primary sinusoid is spent with the second sinusoidal wave phasic difference mutually 180.
Referring to Figure 12, this figure is the three-phase three-wire system five-electrical level inverter topological diagram that the embodiment of the invention provides.
The difference of this figure and Figure 11 is, comprises three topology unit shown in Figure 10, promptly comprises three said single-phase semi-bridge five-electrical level inverters.The connected mode of two single-phase semi-bridge inversion devices among the connection of these three single-phase semi-bridge inversion devices and Figure 11 is identical, shown in figure 12, repeats no more at this.
Need to prove that the said first single-phase semi-bridge five-electrical level inverter is modulated by the primary sinusoid, the second single-phase semi-bridge five-electrical level inverter is modulated by second sine wave, and the 3rd single-phase semi-bridge five-electrical level inverter is modulated by the 3rd sine wave;
The primary sinusoid, second phase place sinusoidal wave and the 3rd sine wave differ 120 degree successively.
The AC of these three topology unit is three ac output ends of this three-phase three-wire system five-electrical level inverter.
Referring to Figure 13, this figure is the three-phase four-wire system five-electrical level inverter topological diagram that the embodiment of the invention provides.
The difference of this figure and Figure 11 is, comprises four topology unit shown in Figure 10, promptly comprises four said single-phase semi-bridge five-electrical level inverters.The connected mode of two single-phase semi-bridge inversion devices among the connection of these four single-phase semi-bridge inversion devices and Figure 11 is identical, shown in figure 13, repeats no more at this.
The AC of these four topology unit is four ac output ends of this three-phase four-wire system five-electrical level inverter.
Need to prove; The semiconductor device that the single-phase semi-bridge five-electrical level inverter that the embodiment of the invention provides uses is less; The power consumption that causes is lower; Therefore efficient is higher, it is understandable that single-phase full bridge, three-phase three-wire system and the three-phase four-wire system five-electrical level inverter be made up of this single-phase semi-bridge five-electrical level inverter have this advantage equally.
Need to prove, all be to be the process that alternating current is incorporated into the power networks later on DC power supply by the inverter inversion among the above embodiment, V among the figure
GRepresent electrical network.It is understandable that this inverter also can be applied to the process from network operation, V among the figure
GPart to replace with load be the situation from network operation.
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction.Though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention.Any those of ordinary skill in the art; Do not breaking away under the technical scheme scope situation of the present invention; All the method for above-mentioned announcement capable of using and technology contents are made many possible changes and modification to technical scheme of the present invention, or are revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical scheme of the present invention, all still belongs in the scope of technical scheme protection of the present invention any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present invention.
Claims (10)
1. a single-phase semi-bridge five-electrical level inverter is characterized in that, comprising: first switching tube, second switch pipe, the 3rd switching tube, the 4th switching tube, the 5th switching tube, the 6th switching tube, the 7th switching tube and the 8th switching tube;
Diode of each said switching tube reverse parallel connection;
The anode of DC power supply is connected the negative terminal of DC power supply through first electric capacity, second electric capacity, the 3rd electric capacity and the 4th electric capacity of series connection successively;
First end of first switching tube connects first end of first electric capacity, and second end of first switching tube connects first node;
First end of second switch pipe connects first node, and second end of second switch pipe connects first end of second electric capacity;
First end of the 3rd switching tube connects first node, and second end of the 3rd switching tube connects Section Point;
First end of the 4th switching tube connects Section Point, and second end of the 4th switching tube connects first end of the 3rd electric capacity;
First end of the 5th switching tube connects Section Point, and second end of the 5th switching tube connects the 3rd node;
First end of the 6th switching tube connects the 3rd node, and second end of the 6th switching tube connects the 4th node;
First end of the 7th switching tube connects first end of the 4th electric capacity, and second end of the 7th switching tube connects the 4th node;
First end of the 8th switching tube connects the 4th node, and second end of the 8th switching tube connects second end of the 4th electric capacity;
The 3rd node is as an ac output end of this inverter, and second end of the 4th switching tube is as another ac output end of this inverter.
2. single-phase semi-bridge five-electrical level inverter according to claim 1 is characterized in that, said switching tube is the IGBT pipe, and said first end is a collector electrode, and second end is an emitter.
3. single-phase semi-bridge five-electrical level inverter according to claim 1 and 2 is characterized in that, also comprises first inductance, second inductance and electric capacity;
Said the 3rd node is connected the common port of second electric capacity and the 3rd electric capacity through first inductance, electric capacity and second inductance of series connection successively.
4. single-phase semi-bridge five-electrical level inverter according to claim 1 is characterized in that, five level operation modes that this single-phase semi-bridge five-electrical level inverter is corresponding are respectively:
First mode: first switching tube, the 3rd switching tube and the 5th switching tube conducting, rest switch Guan Jun ends;
Second mode: second switch pipe, the 3rd switching tube and the 5th switching tube conducting, rest switch Guan Jun ends;
The 3rd mode: the 4th switching tube and the 5th switching tube conducting, rest switch Guan Jun ends;
The 4th mode: the 6th switching tube and the 7th switching tube conducting, rest switch Guan Jun ends;
The 5th mode: the 6th switching tube and the 8th switching tube conducting, rest switch Guan Jun ends.
5. single-phase semi-bridge five-electrical level inverter according to claim 4 is characterized in that,
The conducting sequential of said first switching tube compares generation by sinusoidal wave and first triangular wave, and said sine wave is during greater than said first triangular wave, the said first switching tube conducting, on the contrary end;
The conducting sequential of said second switch pipe compares generation by said sine wave and first triangular wave and second triangular wave, and said sine wave is during greater than said second triangular wave and less than said first triangular wave, the conducting of said second switch pipe, on the contrary end;
The conducting sequential of said the 3rd switching tube compares generation by said sine wave and said second triangular wave, and said sine wave is during greater than said second triangular wave, said the 3rd switching tube conducting, on the contrary end;
The conducting sequential of said the 4th switching tube compares generation by said sine wave and said second triangular wave, and said sine wave is during less than said second triangular wave, said the 4th switching tube conducting, on the contrary end;
The conducting sequential of the 5th switching tube and the conducting sequential of the 4th switching tube are exchanged about the positive half cycle and the negative half period of sine wave;
The conducting sequential of the 6th switching tube and the conducting sequential of the 3rd switching tube are exchanged about the positive half cycle and the negative half period of sine wave;
The conducting sequential of the 7th switching tube and the conducting sequential of second switch pipe are exchanged about the positive half cycle and the negative half period of sine wave;
The conducting sequential of the 8th switching tube and the conducting sequential of first switching tube are exchanged about the positive half cycle and the negative half period of sine wave.
6. the application circuit of the said inverter of claim 1 is characterized in that, comprises two said single-phase semi-bridge five-electrical level inverters, is respectively the first single-phase semi-bridge five-electrical level inverter and the second single-phase semi-bridge five-electrical level inverter;
First end of first switching tube in the first single-phase semi-bridge five-electrical level inverter and the second single-phase semi-bridge five-electrical level inverter links together and all is connected the anode of DC power supply;
Second end of the 8th switching tube in the first single-phase semi-bridge five-electrical level inverter and the second single-phase semi-bridge five-electrical level inverter links together and all is connected the negative terminal of direct voltage;
In the first single-phase semi-bridge five-electrical level inverter and the second single-phase semi-bridge five-electrical level inverter: second end of second switch pipe all links together and all is connected the common port of first electric capacity and second electric capacity; Second end of the 4th switching tube all connects the common port of second electric capacity and the 3rd electric capacity; First end of the 7th switching tube all links together and connects the common port of the 3rd electric capacity and the 4th electric capacity;
The 3rd node of the 3rd node of the first single-phase semi-bridge five-electrical level inverter and the second single-phase semi-bridge five-electrical level inverter is respectively as two ac output ends of this application circuit.
7. the application circuit of inverter according to claim 6 is characterized in that, the said first single-phase semi-bridge five-electrical level inverter is modulated by the primary sinusoid, and the said second single-phase semi-bridge five-electrical level inverter is modulated by second sine wave;
The said primary sinusoid is spent with the second sinusoidal wave phasic difference mutually 180.
8. the application circuit of the said inverter of claim 1; It is characterized in that; Comprising three said single-phase semi-bridge five-electrical level inverters, is respectively the first single-phase semi-bridge five-electrical level inverter, the second single-phase semi-bridge five-electrical level inverter and the 3rd single-phase semi-bridge five-electrical level inverter;
First end of first switching tube in the first single-phase semi-bridge five-electrical level inverter, the second single-phase semi-bridge five-electrical level inverter and the 3rd single-phase semi-bridge five-electrical level inverter links together and all is connected the anode of DC power supply;
Second end of the 8th switching tube in the first single-phase semi-bridge five-electrical level inverter, the second single-phase semi-bridge five-electrical level inverter and the 3rd single-phase semi-bridge five-electrical level inverter links together and all is connected the negative terminal of direct voltage;
In the first single-phase semi-bridge five-electrical level inverter, the second single-phase semi-bridge five-electrical level inverter and the 3rd single-phase semi-bridge five-electrical level inverter: second end of second switch pipe all links together and all is connected the common port of first electric capacity and second electric capacity; Second end of the 4th switching tube all connects the common port of second electric capacity and the 3rd electric capacity; First end of the 7th switching tube all links together and connects the common port of the 3rd electric capacity and the 4th electric capacity;
The 3rd node of the 3rd node of the 3rd node of the first single-phase semi-bridge five-electrical level inverter, the second single-phase semi-bridge five-electrical level inverter and the 3rd single-phase semi-bridge five-electrical level inverter is respectively as three ac output ends of this application circuit.
9. the application circuit of inverter according to claim 8; It is characterized in that; The said first single-phase semi-bridge five-electrical level inverter is modulated by the primary sinusoid; The second single-phase semi-bridge five-electrical level inverter is modulated by second sine wave, and the 3rd single-phase semi-bridge five-electrical level inverter is modulated by the 3rd sine wave;
The primary sinusoid, second phase place sinusoidal wave and the 3rd sine wave differ 120 degree successively.
10. the application circuit of the said inverter of claim 1; It is characterized in that; Comprising four said single-phase semi-bridge five-electrical level inverters, is respectively the first single-phase semi-bridge five-electrical level inverter, the second single-phase semi-bridge five-electrical level inverter, the 3rd single-phase semi-bridge five-electrical level inverter and the 4th single-phase semi-bridge five-electrical level inverter;
First end of first switching tube in the first single-phase semi-bridge five-electrical level inverter, the second single-phase semi-bridge five-electrical level inverter, the 3rd single-phase semi-bridge five-electrical level inverter and the 4th single-phase semi-bridge five-electrical level inverter links together and all is connected the anode of DC power supply;
Second end of the 8th switching tube in the first single-phase semi-bridge five-electrical level inverter, the second single-phase semi-bridge five-electrical level inverter, the 3rd single-phase semi-bridge five-electrical level inverter and the 4th single-phase semi-bridge five-electrical level inverter links together and all is connected the negative terminal of direct voltage;
In the first single-phase semi-bridge five-electrical level inverter, the second single-phase semi-bridge five-electrical level inverter, the 3rd single-phase semi-bridge five-electrical level inverter and the 4th single-phase semi-bridge five-electrical level inverter: second end of second switch pipe all links together and all is connected the common port of first electric capacity and second electric capacity; Second end of the 4th switching tube all connects the common port of second electric capacity and the 3rd electric capacity; First end of the 7th switching tube all links together and connects the common port of the 3rd electric capacity and the 4th electric capacity;
The 3rd node of the 3rd node of the 3rd node of the first single-phase semi-bridge five-electrical level inverter, the second single-phase semi-bridge five-electrical level inverter, the 3rd single-phase semi-bridge five-electrical level inverter and the Section Point of the 4th single-phase semi-bridge five-electrical level inverter are respectively as four ac output ends of this application circuit.
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| CN102427305B (en) | 2014-03-26 |
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