CN102427099A - 一种隧穿结晶体硅太阳能电池的制作方法 - Google Patents
一种隧穿结晶体硅太阳能电池的制作方法 Download PDFInfo
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- CN102427099A CN102427099A CN2011104169138A CN201110416913A CN102427099A CN 102427099 A CN102427099 A CN 102427099A CN 2011104169138 A CN2011104169138 A CN 2011104169138A CN 201110416913 A CN201110416913 A CN 201110416913A CN 102427099 A CN102427099 A CN 102427099A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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CN2011104169138A CN102427099B (zh) | 2011-12-14 | 2011-12-14 | 一种隧穿结晶体硅太阳能电池的制作方法 |
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CN2011104169138A CN102427099B (zh) | 2011-12-14 | 2011-12-14 | 一种隧穿结晶体硅太阳能电池的制作方法 |
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CN102427099A true CN102427099A (zh) | 2012-04-25 |
CN102427099B CN102427099B (zh) | 2013-12-25 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103413838A (zh) * | 2013-07-23 | 2013-11-27 | 新奥光伏能源有限公司 | 一种晶体硅太阳电池及其制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1767216A (zh) * | 2004-10-29 | 2006-05-03 | 三菱重工业株式会社 | 光电转换装置 |
CN102034902A (zh) * | 2010-11-03 | 2011-04-27 | 上海大学 | 硅基sis异质结光电器件的制备方法 |
CN201877454U (zh) * | 2010-12-18 | 2011-06-22 | 广东爱康太阳能科技有限公司 | 一种hit结构的太阳电池 |
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- 2011-12-14 CN CN2011104169138A patent/CN102427099B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1767216A (zh) * | 2004-10-29 | 2006-05-03 | 三菱重工业株式会社 | 光电转换装置 |
CN102034902A (zh) * | 2010-11-03 | 2011-04-27 | 上海大学 | 硅基sis异质结光电器件的制备方法 |
CN201877454U (zh) * | 2010-12-18 | 2011-06-22 | 广东爱康太阳能科技有限公司 | 一种hit结构的太阳电池 |
Non-Patent Citations (8)
Title |
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《applied physics letters》 20100218 Yu. A. Akimov 等 "Nanoparticle-enhanced thin film solar cells: Metallic or dielectric" 第96卷, * |
《Proc. of SPIE,2010》 20101231 K. Fuchsel 等 "Nanostructured SIS Solar Cells" , * |
《Revue des Energies Renouvelables》 20081231 D. Hocine 等 "Influence of interfacial oxide layer thickness on conversion efficiency of SnO2/SiO2/Si(N) Solar Cell" 第11卷, * |
《Semicond.Sci. Technol》 19931231 B Bessais 等 "Technological, structural and morphological aspects of screen-printed ITO used in ITO/Si type structure" 第8卷, * |
B BESSAIS 等: ""Technological, structural and morphological aspects of screen-printed ITO used in ITO/Si type structure"", 《SEMICOND.SCI. TECHNOL》, vol. 8, 31 December 1993 (1993-12-31) * |
D. HOCINE 等: ""Influence of interfacial oxide layer thickness on conversion efficiency of SnO2/SiO2/Si(N) Solar Cell"", 《REVUE DES ENERGIES RENOUVELABLES》, vol. 11, 31 December 2008 (2008-12-31) * |
K. FUCHSEL 等: ""Nanostructured SIS Solar Cells"", 《PROC. OF SPIE,2010》, 31 December 2010 (2010-12-31) * |
YU. A. AKIMOV 等: ""Nanoparticle-enhanced thin film solar cells: Metallic or dielectric"", 《APPLIED PHYSICS LETTERS》, vol. 96, 18 February 2010 (2010-02-18) * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103413838A (zh) * | 2013-07-23 | 2013-11-27 | 新奥光伏能源有限公司 | 一种晶体硅太阳电池及其制备方法 |
CN103413838B (zh) * | 2013-07-23 | 2016-12-07 | 新奥光伏能源有限公司 | 一种晶体硅太阳电池及其制备方法 |
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CN102427099B (zh) | 2013-12-25 |
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