CN102420132B - Method for removing NiPt metallic silicide - Google Patents
Method for removing NiPt metallic silicide Download PDFInfo
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- CN102420132B CN102420132B CN2011101381488A CN201110138148A CN102420132B CN 102420132 B CN102420132 B CN 102420132B CN 2011101381488 A CN2011101381488 A CN 2011101381488A CN 201110138148 A CN201110138148 A CN 201110138148A CN 102420132 B CN102420132 B CN 102420132B
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- metal silicide
- removal
- nipt
- wafer
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Abstract
The invention relates to the field of wet method etching, in particular to a method for removing a NiPt metallic silicide. According to the method disclosed by the invention, a NiPt metallic silicide layer and a polysilicon film on a wafer used in the rapid thermal annealing processing procedure are removed by adopting a mixed agent of HNO3, HCl and HF; and the wafer is cleaned by RCA, the wafer can be re-deposited by the film for recycling, and thus the cost and resources can be effectively saved.
Description
Technical field
The present invention relates generally to a kind of wet etching field, more precisely, the present invention relates to a kind of method of the NiPt of removal metal silicide.
Background technology
At present, form rapid thermal annealing (the Rapid thermal annealing of NiPt metal silicide, abbreviation RTA) in processing procedure, when the routine testing of board, need to use with Poly(monocrystalline silicon or polysilicon) wafer of film, i.e. deposit NiPt metal level and TiN film successively on the Poly film, through rapid thermal annealing (RTA) processing procedure, be used for measuring the stability of resistance with temperature in the monitoring processing procedure.In prior art, although can pass through 50
oUnder the condition of C, adopt H
3PO4 or H
2SO4, HF, H
2O
2And H
2The mixed solution of O can be removed the Ni metal silicide, but due to the more difficult removal of NiPt metal silicide, the current method of the removal about the NiPt metal silicide does not also have, therefore wafer is generally all directly scrapped after being finished, causes the waste of resource and the raising of cost.
RCA is a kind of common Wafer Cleaning technology, the RCA(Radio Corporation of America) researched and developed the RCA ablution cleaned for Silicon Wafer, first use reagent SPM(Sulfuric/Peroxide Mix), SPM reagent is by H
2SO
4-H
2O
2-H
2O forms, H
2SO
4With H
2O
2Volume ratio be roughly 1:3, at 100 ~ 130 ℃ of temperature, utilize SPM to clean and can be used for removing organic substance silicon chip; Re-use reagent A PM(Ammonia/Peroxide Mix), APM claims again SC-1 reagent (Standard Clean-1).SC-1 reagent is by NH4OH-H
2O
2-H
2O forms, and three's ratio is roughly (1:1:5) ~ (1:2:7), and temperature during cleaning is 65 ~ 80 ℃; The Main Function that SC-1 reagent cleans is alkaline oxygenated, removes the particle on silicon chip, and organic substance and the metallic atoms such as Au, Ag, Cu, Ni oxidable and that the removal surface is a small amount of pollute; It is the loss caused because of ammonia and hydrogen peroxide volatilization for reducing that temperature is controlled at below 80 ℃; Afterwards, DHF technique is to adopt hydrofluoric acid (HF) or diluted hydrofluoric acid (DHF) to clean, HF:H
2The volume ratio of O is roughly 1:(2 ~ 10), treatment temperature is at 20 ~ 25 ℃, to utilize the characteristic that hydrofluoric acid can dissolve silica, the silicon chip surface oxide layer generated in upper step cleaning process is removed, particulate and the metal that will be adsorbed on oxide layer wash simultaneously, also have when removing oxide layer and form si-h bond and make silicon face be hydrophobic effect in silicon wafer surface.Finally, use HPM reagent (Hydrochloric/Peroxide Mix), HPM reagent claims again SC-2 reagent, and SC-2 reagent is by HCL-H
2O
2-H
2O forms, the general proportions of three kinds of materials by 1:1:6 to 1:2:8), temperature during cleaning is controlled at 65 ~ 80 ℃.Main Function is acidic oxidation, can dissolve the multiple metal ion do not closed by ammino, and is not dissolved in ammoniacal liquor, may be dissolved in the Al(OH in hydrochloric acid)
3, Fe(OH)
3, Mg(OH)
2And Zn(OH)
2Deng material, to Al
3+, Fe
3+, Mg
2+, Zn
2+Isoionic removal has better effects, and it is the loss caused because of hydrochloric acid and hydrogen peroxide volatilization for reducing that temperature is controlled at below 80 ℃.
Summary of the invention
In view of the above problems, the invention provides a kind of method of the NiPt of removal metal silicide, comprise one in rapid thermal annealing (RTA) processing procedure used wafer, it is characterized in that, further comprising the steps of:
Under the condition of uniform temperature, adopt first kind cleaning fluid (SC-1) solution to wash away the TiN film at described wafer crystal face top;
Adopt HNO
3, the mixed acid solution of HCl and HF is removed NiPt metal silicide layer, crystal face polysilicon membrane and the brilliant back of the body polysilicon membrane on described wafer crystal face successively; And
Adopt the HF solution removal crystal face SiO that concentration is 49%
2Film and brilliant back of the body SiO
2Film;
Finally clean described wafer.
The method of above-mentioned removal NiPt metal silicide, wherein, the structure in described process rapid thermal annealing (RTA) processing procedure on used wafer is followed successively by TiN film, NiPt metal silicide layer, crystal face polysilicon membrane, crystal face SiO
2Film, wafer, brilliant back of the body SiO
2Film and brilliant back of the body polysilicon membrane.
The method of above-mentioned removal NiPt metal silicide, wherein, at least include HNO in the chemical reagent used while removing described NiPt metal silicide layer
3, Cl ion and F ion.
The method of above-mentioned removal NiPt metal silicide, wherein, chemical reagent temperature range of the present invention is 27
oC-70
oC.
The method of above-mentioned removal NiPt metal silicide, wherein, the scope of described HCl shared volume in whole solvent is 5 ~ 30%.
The method of above-mentioned removal NiPt metal silicide, wherein, the scope of described HF shared volume in whole solvent is 0.2 ~ 5%.
The method of above-mentioned removal NiPt metal silicide, wherein, described HNO
3In whole solvent, the scope of shared volume is 70 ~ 90%.
The method of above-mentioned removal NiPt metal silicide, wherein, all processes of the present invention are all carried out in immersion type board or rotary ejection type multi-disc board.
The method of above-mentioned removal NiPt metal silicide, wherein, described RCA cleaning technique mainly adopts first kind cleaning fluid (SC-1) and Equations of The Second Kind cleaning fluid (SC-2) to clean the particle contaminant thing on described wafer successively.
The method of above-mentioned removal NiPt metal silicide, wherein, cleaning described wafer is to adopt the RCA cleaning technique.
The present invention adopts HNO
3, the mix reagent of HCl and HF is removed NiPt metal silicide layer and the polysilicon membrane on used wafer in rapid thermal annealing (RTA) processing procedure, and after RCA cleans, wafer deposition film is again reused, effectively cost-saving and resource.
Those skilled in the art reads the detailed description of following preferred embodiment, and, with reference to after accompanying drawing, the advantage of these and other aspects of the present invention undoubtedly will be apparent.
The accompanying drawing explanation
With reference to appended accompanying drawing, to describe more fully embodiments of the invention.Yet appended accompanying drawing only, for explanation and elaboration, does not form limitation of the scope of the invention.
Fig. 1 is the structural representation of the wafer before using in rapid thermal annealing (RTA) processing procedure in the present invention;
Fig. 2 be in the present invention in rapid thermal annealing (RTA) processing procedure the structural representation of used wafer;
Fig. 3-Fig. 6 removes the schematic flow sheet of NiPt metal silicide in the present invention.
Embodiment
Shown in Fig. 1-2, the present invention is a kind of method of the NiPt of removal metal silicide, and wherein, the chip architecture before using in rapid thermal annealing (RTA) processing procedure comprises the crystal face SiO set gradually on wafer 3 and crystal face thereof
2Film 4, crystal face polysilicon membrane 5, NiPt metal level 6 and TiN film 7, the crystalline substance back of the body SiO that back arranges
2 Film 2 and brilliant back of the body polysilicon membrane 1; This wafer is through rapid thermal annealing (RTA) processing procedure, 6 meetings of NiPt metal level and 5 reactions of part polysilicon membrane form the NiPt metal silicide layer 61 in Fig. 2, the routine testing of board is the resistance measured through the wafer of rapid thermal annealing (RTA) processing procedure, to be used for monitoring the stability of temperature in processing procedure.
Shown in Fig. 3-6, adopt the cleaning fluid of the first kind, as SC-1 solution (is Stand clean-1 cleaning fluid, is mainly NH4OH-H
2O
2-H
2O solution), be set to 70 at temperature setting
oIn the C situation, remove the TiN film 7 at the crystal face top of wafer 3.
Adopt again HNO
3The mixed acid solution of HCl and HF with incorporate in water after polysilicon in NiPt metal silicide and polysilicon membrane is reacted, with the NiPt metal silicide layer 61 on the crystal face of removing wafer 3, crystal face polysilicon membrane 51 and brilliant back of the body polysilicon membrane 1, wherein, the scope of the shared volume in whole solvent of the HCl in above-mentioned mixed acid solution is 5 ~ 30%, the scope of HF shared volume in whole solvent is 0.2 ~ 5%, HNO
3In whole solvent, the scope of shared volume is 70 ~ 90%; Utilize the HF solution removal crystal face SiO that concentration is 49%
2Film 4 and brilliant back of the body SiO
2Film 2; Because can being attached to formation particle on wafer 3, the particle produced in above-mentioned chemical reaction stains, so can adopt the RCA cleaning technique, first use SC-1 solution clean wafers 3, then use the Equations of The Second Kind cleaning fluid, as SC-2(is Stand clean-2 cleaning fluid, be mainly HCL-H
2O
2-H
2O solution) clean and can remove the above-mentioned particle that adheres to, after having prepared, wafer 3 just again deposition film reused.
Wherein, as long as contain HNO in the solution of the mixed acid used during above-mentioned removal NiPt metal silicide layer 61
3, Cl ion and F solion get final product.
Further, the temperature range of chemical reagent of the present invention is 27
oC-70
oBetween C.
Just as a reference, listed parameters is not construed as limiting the invention above-mentioned etching condition.For example, the etching conditions such as etching pressure, power, mist all can carry out adaptive adjustment.
A kind of method of NiPt metal silicide of removing of the present invention is by adopting HNO
3The mix reagent of HCl and HF is removed NiPt metal silicide layer and the polysilicon membrane on used wafer in rapid thermal annealing (RTA) processing procedure, after RCA technique is cleaned, wafer deposition film is again reused, effectively cost-saving and resource.
By explanation and accompanying drawing, provided the exemplary embodiments of the ad hoc structure of embodiment, based on spirit of the present invention, also can do other conversion.Although foregoing invention has proposed existing preferred embodiment, yet these contents are not as limitation.
For a person skilled in the art, after reading above-mentioned explanation, various changes and modifications undoubtedly will be apparent.Therefore, appending claims should be regarded whole variations and the correction of containing true intention of the present invention and scope as.In claims scope, scope and the content of any and all equivalences, all should think and still belong to the intent and scope of the invention.
Claims (10)
1. a method of removing the NiPt metal silicide, comprise one in the rapid thermal annealing processing procedure used wafer, it is characterized in that, further comprising the steps of:
Under the condition of uniform temperature, adopt first kind cleaning fluid (SC-1) to wash away the TiN film at described wafer crystal face top;
Adopt HNO
3, the mixed acid solution of HCl and HF is removed NiPt metal silicide layer, crystal face polysilicon membrane and the brilliant back of the body polysilicon membrane on described wafer crystal face successively; And
Adopt the HF solution removal crystal face SiO that concentration is 49%
2Film and brilliant back of the body SiO
2Film;
Finally clean described wafer, re-start deposition film technique on described wafer.
2. the method for removal NiPt metal silicide as claimed in claim 1, is characterized in that, the structure in described process rapid thermal annealing processing procedure on used wafer is followed successively by TiN film, NiPt metal silicide layer, crystal face polysilicon membrane, crystal face SiO
2Film, wafer, brilliant back of the body SiO
2Film and brilliant back of the body polysilicon membrane.
3. the method for removal NiPt metal silicide as claimed in claim 1, is characterized in that, at least includes HNO in the chemical reagent used while removing described NiPt metal silicide layer
3, Cl ion and F ion.
4. the method for removal NiPt metal silicide as claimed in claim 1, is characterized in that, the chemical reagent temperature range adopted is 27 ℃-70 ℃.
5. the method for removal NiPt metal silicide as claimed in claim 1, is characterized in that, the scope of described HCl shared volume in whole solvent is 5～30%.
6. the method for removal NiPt metal silicide as claimed in claim 1, is characterized in that, the scope of described HF shared volume in whole solvent is 0.2～5%.
7. the method for removal NiPt metal silicide as claimed in claim 1, is characterized in that described HNO
3In whole solvent, the scope of shared volume is 70～90%.
8. the method for removal NiPt metal silicide as claimed in claim 1, is characterized in that, all processes are all carried out in immersion type board or rotary ejection type multi-disc board.
9. the method for removal NiPt metal silicide as claimed in claim 1, is characterized in that, cleaning described wafer is to adopt the RCA cleaning technique.
10. the method for removal NiPt metal silicide as claimed in claim 9, is characterized in that, described RCA cleaning technique mainly adopts first kind cleaning fluid (SC-1) and Equations of The Second Kind cleaning fluid (SC-2) to clean the particle contaminant thing on described wafer successively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101381488A CN102420132B (en) | 2011-05-26 | 2011-05-26 | Method for removing NiPt metallic silicide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101381488A CN102420132B (en) | 2011-05-26 | 2011-05-26 | Method for removing NiPt metallic silicide |
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| CN102420132A CN102420132A (en) | 2012-04-18 |
| CN102420132B true CN102420132B (en) | 2013-12-04 |
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| CN105448657A (en) * | 2014-09-02 | 2016-03-30 | 无锡华润上华半导体有限公司 | Method for improving threshold voltage uniformity of high-voltage device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101123190A (en) * | 2006-08-07 | 2008-02-13 | 联华电子股份有限公司 | Method for cleaning residual metal |
| CN101137461A (en) * | 2004-12-23 | 2008-03-05 | 兰姆研究公司 | Methods for silicon electrode assembly etch rate and etch uniformity recovery |
| CN101724847A (en) * | 2008-10-21 | 2010-06-09 | 中芯国际集成电路制造(北京)有限公司 | Method for cleaning metal residue |
| CN101722159A (en) * | 2009-12-04 | 2010-06-09 | 北京有色金属研究总院 | Process for cleaning silicon chip by using diluted fluohydric acid |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080242017A1 (en) * | 2007-03-26 | 2008-10-02 | Kun-Hsien Lee | Method of manufacturing semiconductor mos transistor devices |
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2011
- 2011-05-26 CN CN2011101381488A patent/CN102420132B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101137461A (en) * | 2004-12-23 | 2008-03-05 | 兰姆研究公司 | Methods for silicon electrode assembly etch rate and etch uniformity recovery |
| CN101123190A (en) * | 2006-08-07 | 2008-02-13 | 联华电子股份有限公司 | Method for cleaning residual metal |
| CN101724847A (en) * | 2008-10-21 | 2010-06-09 | 中芯国际集成电路制造(北京)有限公司 | Method for cleaning metal residue |
| CN101722159A (en) * | 2009-12-04 | 2010-06-09 | 北京有色金属研究总院 | Process for cleaning silicon chip by using diluted fluohydric acid |
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