CN102411659A - Silicon wafer through hole equivalent circuit model and model parameter extraction method - Google Patents
Silicon wafer through hole equivalent circuit model and model parameter extraction method Download PDFInfo
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- CN102411659A CN102411659A CN2011103835146A CN201110383514A CN102411659A CN 102411659 A CN102411659 A CN 102411659A CN 2011103835146 A CN2011103835146 A CN 2011103835146A CN 201110383514 A CN201110383514 A CN 201110383514A CN 102411659 A CN102411659 A CN 102411659A
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Abstract
The invention discloses a silicon wafer through hole equivalent circuit model which comprises a first network branch and more than one second network branch, wherein the first network branch is formed by connecting a coupling resistance and a coupling capacitance between adjacent silicon wafer through holes in parallel, the second network branches are connected in parallel mutually, the number of the second network branches is determined by using the number of silicon wafer through hole arrays, each second network branch comprises a metal series resistance, a metal series inductance and one secondary network branch, the second network branch comprises a skin resistance, a skin inductance and a proximity resistance, numbers of equivalent circuit elements in all second network branches are same, and a mutual inductance relationship is formed among all metal series inductances. The invention also discloses a model parameter extraction method. The silicon wafer through hole equivalent circuit model is designed based on a physical structure of a silicon wafer through hole and a realizing process, thus the defect of simple traditional silicon wafer through hole equivalent circuit model is overcome, and fitting effect of the model to device electric characteristics is improved.
Description
Technical field
The present invention relates to SIC (semiconductor integrated circuit) and make the field, particularly relate to the equivalent-circuit model and the model parameter extraction method of semiconductor radio-frequency devices.
Background technology
(Through Silicon Via TSV) is one of device related in the SIC (semiconductor integrated circuit) and technology to the silicon chip through hole.In the integrated circuit encapsulation of high integration, the silicon chip through hole is the important means that realizes the three-dimensional circuit interconnection.In the design of RF IC, this device also is widely used, for example; In the application of BiCMOS RF IC; The silicon chip through hole can be realized the direct ground connection of bipolar transistor emitter, can reduce the stray inductance of ground connection, thereby improves the gain of radio circuit effectively.
In the application of integrated circuit, the precision of circuit design often depends on the precision of the electrical model of each device.RF IC often is operated on the higher frequency in addition; The precision of its design is bigger to the dependence of radio-frequency devices electrical model precision; Therefore; The equivalent electrical circuit electrical model of silicon chip through hole has remarkable influence to the performance of RF IC, and along with the improving constantly of radio circuit frequency of operation, and the silicon chip through hole is to the radio circuit Effect on Performance more and more significant that also can become.But existing silicon chip through hole equivalent electrical circuit electrical model is often too simple, includes only the structure that simple resistance is connected with inductance, therefore, does not also reach the requirement of RF IC design accuracy at the simulation accuracy of RF application.
Summary of the invention
The technical matters that the present invention will solve provides a kind of silicon chip through hole equivalent-circuit model, and it has fitting effect preferably to the device electrology characteristic.
For solving the problems of the technologies described above, silicon chip through hole equivalent-circuit model of the present invention comprises first arm of a network and second arm of a network more than; Wherein,
First arm of a network comprises repeating resistance and the coupling capacitance between adjacent silicon chip through hole, this repeating resistance and coupling capacitance parallel connection;
Second arm of a network is parallel with one another, and number is by the number of arrays decision of silicon chip through hole; Every second arm of a network comprises metal resistance in series, metal series inductance and secondary network branch road of silicon chip through hole; Secondary network is propped up after route skin resistance and the skin inductance series connection of becoming and the parallelly connected formation of contiguous resistance again, is used to describe the high frequency skin effect and the proximity effect of metal series inductance; Equivalent-circuit component numerical value corresponding in each bar second arm of a network is identical, and has the mutual inductance relation between each metal series inductance.
Another technical matters that the present invention will solve provides the parameter extracting method of above-mentioned model.
For solving the problems of the technologies described above, the model parameter extraction method of silicon chip through hole equivalent-circuit model of the present invention may further comprise the steps:
1) the silicon chip through hole is carried out radio frequency testing, scan a class frequency F, obtain the high-frequency resistance parameter on the different frequency point;
2) according to the resistivity of the metal of filling in the thickness of the aperture size of silicon chip through hole, the silicon substrate that runs through and the silicon chip through hole, with calculating and emulation mode obtains the numerical value of metal resistance in series and metal series inductance;
3) value with repeating resistance and coupling capacitance is made as empirical value;
4) get the real part of said high-frequency resistance parameter, obtain the data and curves of said real part with said change of frequency; Constantly adjust the numerical value of contiguous resistance, make the low-frequency range part of continuous this data and curves of match of simulation result, confirm the numerical value of contiguous resistance in the model; Constantly adjust the numerical value of skin resistance, make the high band part of continuous this data and curves of match of simulation result, confirm the numerical value of skin resistance in the model;
5) get the imaginary part I of said high-frequency resistance parameter, the data and curves of calculating that
obtains
and changing with frequency F; Constantly adjust the numerical value of the coefficient of mutual inductance between the metal series inductance, make the low-frequency range part of continuous this data and curves of match of simulation result, confirm the numerical value of coefficient of mutual inductance in the model; The continuous adjustment numerical value of skin inductance that becomes makes the high band part of continuous this data and curves of match of simulation result, the numerical value of the skin inductance of confirming to become in the model.
Silicon chip equivalent-circuit model of the present invention has intactly comprised the influence to silicon chip through hole high frequency electrology characteristic of each ingredient of relating to silicon chip through hole physical arrangement; Overcome the too simple shortcoming of existing model; Can directly be used for the high-frequency circuit emulation of silicon chip through hole, the high frequency electricity influence that simulation silicon chip through hole brings radio-frequency devices.And the present invention is based on the model parameter extraction method that this circuit model proposes, then can improve extraction efficiency and the model of model parameter fitting effect significantly to the device electrology characteristic.
Description of drawings
Fig. 1 is the physical arrangement synoptic diagram of the silicon chip through hole in the RF IC manufacturing process.
Fig. 2 is the structural representation of the silicon chip through hole equivalent-circuit model of the embodiment of the invention.
Embodiment
Understand for technology contents of the present invention, characteristics and effect being had more specifically, combine illustrated embodiment at present, details are as follows:
The physical arrangement of silicon chip through hole that can be in addition integrated in RF IC technology generally is made up of the array of the metal throuth hole (present embodiment is the tungsten plug) of a plurality of through-silicon substrates, and is as shown in Figure 1.
Silicon chip through-hole structure to be made up of the metal throuth hole array of two through-silicon substrates is an example, and according to this physical arrangement, present embodiment has been developed the equivalent-circuit model of the H type structure of being made up of three arm of a network in left, center, right, and is as shown in Figure 2.Wherein, left and right two arm of a network parallel connections, and include identical equivalent-circuit component, promptly form by a resistance, an inductance and a secondary network branch road respectively; Resistance R
3And R
4Numerical value equates, represents the metal resistance in series of silicon chip through hole; Inductance L
1And L
2Numerical value equates, represents the metal series inductance of silicon chip through hole, and inductance L
1And L
2Have the mutual inductance relation, coefficient of mutual inductance is K; Two secondary network branch roads also include identical equivalent-circuit component; Promptly form by become skin inductance and contiguous resistance of a skin resistance, one respectively; Be used to describe the high frequency skin effect and the proximity effect of the metal series inductance of silicon chip through hole, wherein, contiguous resistance R
1And R
2Numerical value equates, skin resistance R
11And R
21Numerical value equates that the skin inductance L becomes
11And L
21Numerical value equates.The go-between of equivalent-circuit model props up route parallel resistor R
pAnd capacitor C
pForm, represent respectively by repeating resistance and coupling capacitance between the adjacent silicon chip through hole due to the Semiconductor substrate.When the fixed thickness of the aperture size of single metal through hole in the concrete technology and the silicon substrate that runs through, each component value in the above-mentioned equivalent-circuit model may be defined to the function of the array total number of metal throuth hole.
Do a detailed description in the face of the model parameter extraction method of above-mentioned equivalent-circuit model down.
At first, the silicon chip through hole is carried out radio frequency testing, testing process mainly comprises a class frequency Freq who scans 0.01～100GHz, obtains the high-frequency resistance parameter (Z parameter) on the different frequency point.
Obtain after the Z parameter, extract each main model parameter in the above-mentioned equivalent-circuit model according to following flow process:
Step 1 is according to the thickness of the aperture size of single silicon chip through hole, the silicon substrate that runs through and the resistivity of tungsten plug, with calculating and method such as emulation obtains R
3, R
4, L
1And L
2Numerical value.
Step 2 is with repeating resistance R
pValue be made as empirical value 10e3 ohm, coupling capacitance C
pValue be made as empirical value 10e-15 farad.
Step 3 is got the real part R (Z) of original Z parameter, and then obtains the data and curves that R (Z) changes with Freq.Constantly adjust R
1And R
2Numerical value, make the low-frequency range part of continuous this data and curves of match of simulation result, thereby confirm R in the model
1And R
2Numerical value.Constantly adjust R
11And R
21Numerical value, make the high band part of continuous this data and curves of match of simulation result, thereby confirm R in the model
11And R
21Numerical value.
Step 4 is got the imaginary part I (Z) of original Z parameter, calculates I (Z)/(2 * π * Freq), and then obtain I (Z)/(data and curves of 2 * π * Freq) change with Freq.Constantly the numerical value of adjustment coefficient of mutual inductance K makes the low-frequency range part of continuous this data and curves of match of simulation result, thereby confirms the numerical value of K in the model.Constantly adjust L
11And L
21Numerical value, make the high band part of continuous this data and curves of match of simulation result, thereby confirm L in the model
11And L
21Numerical value.
According to the difference of metal throuth hole array total number in the silicon chip through-hole structure, can construct the parameter of each element in silicon chip equivalent-circuit model and the extraction model of corresponding construction with reference to said structure.
Claims (4)
1. silicon chip through hole equivalent-circuit model is characterized in that, comprises first arm of a network and second arm of a network more than; Wherein,
First arm of a network comprises repeating resistance and the coupling capacitance between adjacent silicon chip through hole; Said repeating resistance and coupling capacitance parallel connection;
Second arm of a network is parallel with one another, and number is by the number of arrays decision of silicon chip through hole; Every second arm of a network comprises metal resistance in series, metal series inductance and secondary network branch road of silicon chip through hole; Secondary network is propped up after route skin resistance and the skin inductance series connection of becoming and the parallelly connected formation of contiguous resistance again, is used to describe the high frequency skin effect and the proximity effect of metal series inductance; Equivalent-circuit component numerical value corresponding in each bar second arm of a network is identical, and has the mutual inductance relation between each metal series inductance.
2. the model parameter extraction method of the said silicon chip through hole of claim 1 equivalent-circuit model is characterized in that, may further comprise the steps:
1) the silicon chip through hole is carried out radio frequency testing, scan a class frequency F, obtain the high-frequency resistance parameter on the different frequency point;
2) according to the resistivity of the metal of filling in the thickness of the aperture size of silicon chip through hole, the silicon substrate that runs through and the silicon chip through hole, with calculating and emulation mode obtains the numerical value of metal resistance in series and metal series inductance;
3) value with repeating resistance and coupling capacitance is made as empirical value;
4) get the real part of said high-frequency resistance parameter, obtain the data and curves of said real part with said change of frequency; Constantly adjust the numerical value of contiguous resistance, make the low-frequency range part of continuous this data and curves of match of simulation result, confirm the numerical value of contiguous resistance in the model; Constantly adjust the numerical value of skin resistance, make the high band part of continuous this data and curves of match of simulation result, confirm the numerical value of skin resistance in the model;
5) get the imaginary part I of said high-frequency resistance parameter, the data and curves of calculating that
obtains
and changing with frequency F; Constantly adjust the numerical value of the coefficient of mutual inductance between the metal series inductance, make the low-frequency range part of continuous this data and curves of match of simulation result, confirm the numerical value of coefficient of mutual inductance in the model; The continuous adjustment numerical value of skin inductance that becomes makes the high band part of continuous this data and curves of match of simulation result, the numerical value of the skin inductance of confirming to become in the model.
3. method according to claim 2 is characterized in that, step 1), the span of said frequency F are 0.01～100GHz.
4. method according to claim 2 is characterized in that, step 3), and the value of repeating resistance is made as 10e3 ohm, and the value of coupling capacitance is made as the 10e-15 farad.
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| CN104636526A (en) * | 2013-11-13 | 2015-05-20 | 上海华虹宏力半导体制造有限公司 | Mismatch model method of silicon through holes |
| CN104866685A (en) * | 2015-06-07 | 2015-08-26 | 上海华虹宏力半导体制造有限公司 | Method for embedding skin effect equivalent circuit model into circuit simulator |
| CN105183939A (en) * | 2015-07-21 | 2015-12-23 | 电子科技大学 | Equivalent circuit-based method for calculating shielding efficiency of cavity with hole arrays |
| CN106156381A (en) * | 2015-04-02 | 2016-11-23 | 台湾积体电路制造股份有限公司 | The parameter determination method of array of semiconductor devices and device |
| CN109522652A (en) * | 2018-11-16 | 2019-03-26 | 西安电子科技大学 | The distribution network equivalent circuit of on piece in three dimensional integrated circuits |
| CN110196984A (en) * | 2018-12-06 | 2019-09-03 | 西安电子科技大学 | A kind of high-speed broadband band modeling method, system, device and storage medium |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104636526A (en) * | 2013-11-13 | 2015-05-20 | 上海华虹宏力半导体制造有限公司 | Mismatch model method of silicon through holes |
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| CN106156381A (en) * | 2015-04-02 | 2016-11-23 | 台湾积体电路制造股份有限公司 | The parameter determination method of array of semiconductor devices and device |
| CN106156381B (en) * | 2015-04-02 | 2019-07-05 | 台湾积体电路制造股份有限公司 | The parameter determination method and device of array of semiconductor devices |
| CN104866685A (en) * | 2015-06-07 | 2015-08-26 | 上海华虹宏力半导体制造有限公司 | Method for embedding skin effect equivalent circuit model into circuit simulator |
| CN105183939A (en) * | 2015-07-21 | 2015-12-23 | 电子科技大学 | Equivalent circuit-based method for calculating shielding efficiency of cavity with hole arrays |
| CN109522652A (en) * | 2018-11-16 | 2019-03-26 | 西安电子科技大学 | The distribution network equivalent circuit of on piece in three dimensional integrated circuits |
| CN109522652B (en) * | 2018-11-16 | 2022-12-02 | 西安电子科技大学 | Equivalent circuit of distribution network on three-dimensional integrated circuit middle piece |
| CN110196984A (en) * | 2018-12-06 | 2019-09-03 | 西安电子科技大学 | A kind of high-speed broadband band modeling method, system, device and storage medium |
| CN110196984B (en) * | 2018-12-06 | 2020-12-29 | 西安电子科技大学 | High-speed broadband modeling method, system, device and storage medium |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20131216 |
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