CN101149762A - High frequency equivalent circuit structure for on-chip inductor and its parameter calculation method - Google Patents
High frequency equivalent circuit structure for on-chip inductor and its parameter calculation method Download PDFInfo
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- CN101149762A CN101149762A CNA2006101162526A CN200610116252A CN101149762A CN 101149762 A CN101149762 A CN 101149762A CN A2006101162526 A CNA2006101162526 A CN A2006101162526A CN 200610116252 A CN200610116252 A CN 200610116252A CN 101149762 A CN101149762 A CN 101149762A
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Abstract
This invention discloses a high inductive frequency equivalent circuit structure and its parameters calculation method of chip used for chips, the circuit structure of this invention include: an inductor used to signify inductive values of high frequency inductance, two capacitances used to express capacity of from top metal to substrate oxidation layer, two parallel structure to simulate deterioration of the substrate, a resistance used to signify contact resistance of contact hole, a capacitor used to signify capacity coupling of the two layer metal between two ports, a ladder structure circuit to simulate skin effect. The constraint relations in the circuit of ladder structure in present invention is the above formula, in which the Lint is the internal inductance, RDC is the DC resistance, Ri is the resistance of number i layer, Li is the inductance of number i layer, i equals 1-4, has the relationship of the above formula; and the total phase of ladder structure circuit equals the combination phase of internal inductance and DC resistance. The invention is very suitable for the use of circuit design, can easily set up inductance module.
Description
Technical Field
The invention relates to model method research in radio frequency integrated circuit design, which is used for determining a model and calculating parameters thereof, in particular to an equivalent circuit structure of a high-frequency inductor for an on-chip inductor and a parameter calculation method thereof.
Background
Due to the wide application of on-chip spiral inductors in radio frequency integrated circuits, establishing a high-precision on-chip inductor model is more and more important. At present, a Radio Frequency (RF) single-ended inductor model generally adopts an One-PI (PI-shaped) equivalent model, but the Q value of an on-chip inductor is very low due to the high loss characteristic of a silicon substrate, so that the inductor model is difficult to establish.
Disclosure of Invention
The invention aims to solve the technical problem of providing a high-frequency equivalent circuit structure for on-chip inductance and a parameter calculation method thereof, which can easily establish an inductance model.
In order to solve the above technical problem, the present invention provides a high frequency equivalent circuit structure for on-chip inductor, comprising: an inductor Lo for representing the external inductance value of the high-frequency inductor; two capacitors Cox1, cox2 to represent the top metal to substrate oxide layer capacitance; two parallel structures for simulating a lossy substrate, a resistor R11 for representing the contact resistance of the contact hole (Via), and a capacitor Cs for representing the capacitive coupling of the two layers of metal between the two ports; a ladder-type structure sub-circuit for simulating skin effect; wherein the inductor Lo and the resistor R 11 The ladder-type structure sub-circuits are sequentially connected in series and then are coupled with the capacitor Cs; the capacitor Cox1 is connected with the two parallel structures and the capacitor Cox2 in series in sequence and then is coupled with the capacitor Cs. The parallel structure is divided by a capacitor Csi1 and a resistor Rsi1, a capacitor Csi2 and a resistor Rsi2Respectively connected in parallel; the ladder-type sub-circuit comprises a plurality of coupled sub-groups, wherein each sub-group comprises an inductor and a capacitor which are connected in series.
In order to solve the technical problem, the invention also provides a parameter calculation method for the high-frequency equivalent circuit structure of the on-chip inductor, which can be used for the high-frequency electricity with a ladder-shaped structure sub-circuit being a four-layer small groupIn the equivalent circuit structure of feeling, the constraint relation in the ladder-type structure subcircuit is as follows:
wherein L is int Is an internal inductance, R DC Is a direct current resistance, R i Is the i-th layer resistance L i I =1-4 for the i-th layer inductance; and is
And at low frequency, the total phase of the ladder-shaped structure subcircuit is equal to the combined phase of the internal inductor and the direct current resistor.
The method for calculating the element parameter values of the equivalent inductance physical model according to the process parameters and the layout parameters, the structure of the ladder-type sub-circuit structure and the calculation method of the element values enable the inductance model to be expandable and can meet the time domain simulation requirements of a similar spice simulator, and the method is very suitable for circuit design.
Drawings
FIG. 1 is an equivalent circuit model of an on-chip spiral inductor in an embodiment of the present invention;
fig. 2 is an equivalent sub-circuit of a ladder structure in one embodiment of the invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings.
Firstly, the principle of the invention is explained, because the Radio Frequency (RF) single-ended inductance model generally adopts an One-PI equivalent model at present, the invention provides a method for calculating the parameters of each element of the One-PI equivalent circuit, and the element parameters obtained by calculation have strong physical significance and can ensure that the model has better expandability. In addition, in order to reflect the Skin effect (Skin-effect) of the inductance under the higher frequency, the invention has also proposed the ladder structure (ladder structure) equivalent sub-circuit to describe Skin effect, because there is very good simulation to the Skin effect that has improved the accuracy of the inductance model, compare with the scheme used for equivalent resistance model of the frequency correlation to replace the series resistance of One-PI structure, the sub-circuit is formed by RL component, overcome the disadvantage of incompatible time domain simulation, meet the simulation requirement of similar SPCIE completely.
Fig. 1 shows an equivalent circuit model of an on-chip spiral inductor according to an embodiment of the present invention, in which the ladder structure has four layers. In the equivalent circuit structure of the inductor shown in the figure I, lo represents the external inductance value of the inductor, cox represents the capacitance of the top metal-to-substrate oxide layer, a parallel structure consisting of Csi and Rsi is used for simulating a lossy substrate, and R 11 The contact resistance of Via is shown and Cs represents the capacitive coupling of the two layers of metal between the two ports. The ladder structure is used for simulating the skin effect and is calculated by the direct current resistance and the internal inductance value of the inductor. In this embodiment, the equivalent circuit element values are calculated as follows:
looking first at the calculation of the direct current inductance (Ls), from the published paper, it is known that the line inductance per unit length can be calculated by the following formula:
L total ＝L self +M + -M - ，
L self ＝2l[ln( 2l / w+t )+0.5+ (w+t) / 3l ]，
M＝2lP，
wherein: l is total Is the total inductance value, L self For self-induction, M + Is positive mutual inductance, M - Is negative mutual inductanceM is total mutual inductance, GMD is geometric mean square distance, P is mutual inductance parameter, d is line center-to-centerDistance, w is line width, l is line length, and t is metal thickness.
The inductance value of the inductance device is automatically calculated according to the given parameters such as the number of turns, the outer diameter, the line width, the distance and the like and according to the formula and a certain algorithm, and the inductance value is written into a MATLAB program.
Related elements such as direct current resistance, series capacitance (Cs), oxide layer capacitance (Cox), substrate network and the like in the circuit can also be obtained through calculation.
Fig. 2 shows an equivalent sub-circuit of a ladder structure in an embodiment of the present invention, where the sub-circuit has four layers. The One-PI equivalent circuit structure of the ladder-shaped structure is a physical extensible model, and element parameters of the One-PI equivalent circuit structure can be completely calculated and determined through process parameters and layout parameters of inductors. Due to strong physical significance, the extensible parameters comprise the outer diameter, the distance, the line width and the number of turns of the inductor. All element parameters are composed of inductance, resistance and capacitance (RLC) which are irrelevant to frequency, and the method meets the requirement of time domain simulation and has the maximum simulation compatibility.
The relationship of its internal circuit elements is as follows:
1)
2)
3)
wherein: l is int Is an internal inductance, R DC Is a direct current resistance, R i Is the i-th layer resistance, L i I is the ith layer inductance and i is 1-4.
In addition, the first and second substrates are,
a) The total resistance of the parallel resistors is equal to the dc resistance of the inductor:
b) At low frequencies, the ladder structure has an overall phase equal to the phase of the combination of the internal inductance and the dc resistance.
Examples are as follows: such as alpha R ＝2.53，
Then x =1.411, α L ＝2.977。
According to the formula, the inductance and resistance values of each element in the ladder-structured sub-circuit can be calculated.
In addition, by measuring inductance S parameters of various turns, outer diameters, line widths and intervals, the model and the actual test value can better accord with even under the frequency of 10 Ghz; parameters such as quality factor, inductance and resistance, and model calculation value are in accordance with the actual test value.
In summary, the invention provides an equivalent circuit model of the on-chip spiral inductor, which is only composed of the RLC elements, and comprises an equivalent sub-circuit for simulating a high-frequency skin effect, and provides a calculation method of corresponding element parameters. Compared with the scheme that the equivalent resistance model related to the frequency replaces the series resistance of an One-PI structure, the sub-circuit is composed of RL elements, the defect of incompatibility in time domain simulation is overcome, and the simulation requirement of the SPCIE-like simulation is completely met.
Claims (4)
1. A high frequency equivalent circuit structure for an on-chip inductor, comprising:
an inductance (Lo) for representing the external inductance value of the high-frequency inductor;
two capacitors (Cox 1, cox 2) to represent the top metal to substrate oxide layer capacitance;
two parallel structures for simulating a lossy substrate,
a resistor (R) 11 ) To indicate the contact resistance of the contact hole,
a capacitor (Cs) to represent the capacitive coupling of the two layers of metal between the two ports;
a ladder-structured sub-circuit for simulating skin effect;
wherein the inductance (Lo) and the resistance (R) 11 ) The ladder-shaped structure sub-circuits are sequentially connected in series and then coupled with the capacitor (Cs);
the capacitor (Cox 1) is connected with the two parallel structures and the capacitor (Cox 2) in series in sequence and then is coupled with the capacitor (Cs).
2. The high-frequency equivalent circuit structure for on-chip inductors according to claim 1, wherein said parallel structure is composed of capacitors (Csi 1, csi 2) and resistors (Rsi 1, rsi 2) respectively connected in parallel; the ladder-type structure sub-circuit comprises a plurality of coupled small groups, wherein each small group comprises an inductor and a capacitor which are connected in series.
3. The high-frequency equivalent circuit structure for an on-chip inductor according to claim 2, wherein said coupled subset of layers is four layers.
4. A parameter calculation method for a high-frequency equivalent circuit structure of an on-chip inductor, which can be used in the high-frequency equivalent circuit structure of the on-chip inductor as claimed in claim 3, wherein the constraint relationship in the ladder-shaped structure sub-circuit is:
wherein L is int Is an internal inductance, R DC Is a direct current resistance, R i Is the i-th layer resistance, L i For the ith layer inductance, i =1-4, α R ，α L X is a coefficient of relationship of circuit element values; and is
And at low frequency, the total phase of the ladder-shaped structure sub-circuit is equal to the combined phase of the internal inductor and the direct current resistor.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102073757A (en) * | 2010-12-17 | 2011-05-25 | 杭州电子科技大学 | Analysis method for inductance model in integrated circuit |
| CN102156792A (en) * | 2011-05-04 | 2011-08-17 | 华东师范大学 | On-chip inductance lumped model |
| CN102375900A (en) * | 2010-08-19 | 2012-03-14 | 上海华虹Nec电子有限公司 | Radio-frequency metal-insulator-metal (MIM) capacitor simulation circuit structure taking skin effect into consideration |
| CN102411659A (en) * | 2011-11-25 | 2012-04-11 | 上海华虹Nec电子有限公司 | Silicon wafer through hole equivalent circuit model and model parameter extraction method |
| CN101840441B (en) * | 2009-03-18 | 2012-08-22 | 复旦大学 | High-frequency equivalent circuit structure for on-chip transformer |
| CN104866685A (en) * | 2015-06-07 | 2015-08-26 | 上海华虹宏力半导体制造有限公司 | Method for embedding skin effect equivalent circuit model into circuit simulator |
| CN105426560A (en) * | 2015-07-01 | 2016-03-23 | 上海电机学院 | Derivative modeling method for equivalently eliminating high-frequency parasitic parameters of passive device |
| CN105808844A (en) * | 2016-03-08 | 2016-07-27 | 上海华虹宏力半导体制造有限公司 | Radio frequency model of on-chip symmetrical inductor |
-
2006
- 2006-09-20 CN CNA2006101162526A patent/CN101149762A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101840441B (en) * | 2009-03-18 | 2012-08-22 | 复旦大学 | High-frequency equivalent circuit structure for on-chip transformer |
| CN102375900A (en) * | 2010-08-19 | 2012-03-14 | 上海华虹Nec电子有限公司 | Radio-frequency metal-insulator-metal (MIM) capacitor simulation circuit structure taking skin effect into consideration |
| CN102073757A (en) * | 2010-12-17 | 2011-05-25 | 杭州电子科技大学 | Analysis method for inductance model in integrated circuit |
| CN102073757B (en) * | 2010-12-17 | 2012-11-07 | 杭州电子科技大学 | Analysis method for inductance model in integrated circuit |
| CN102156792A (en) * | 2011-05-04 | 2011-08-17 | 华东师范大学 | On-chip inductance lumped model |
| CN102411659A (en) * | 2011-11-25 | 2012-04-11 | 上海华虹Nec电子有限公司 | Silicon wafer through hole equivalent circuit model and model parameter extraction method |
| CN104866685A (en) * | 2015-06-07 | 2015-08-26 | 上海华虹宏力半导体制造有限公司 | Method for embedding skin effect equivalent circuit model into circuit simulator |
| CN105426560A (en) * | 2015-07-01 | 2016-03-23 | 上海电机学院 | Derivative modeling method for equivalently eliminating high-frequency parasitic parameters of passive device |
| CN105808844A (en) * | 2016-03-08 | 2016-07-27 | 上海华虹宏力半导体制造有限公司 | Radio frequency model of on-chip symmetrical inductor |
| CN105808844B (en) * | 2016-03-08 | 2019-01-04 | 上海华虹宏力半导体制造有限公司 | The radiofrequency model of the symmetrical inductance of on piece |
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