CN102386060A - Method for cleaning multilayer metal interconnection structure - Google Patents
Method for cleaning multilayer metal interconnection structure Download PDFInfo
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- CN102386060A CN102386060A CN2010102750945A CN201010275094A CN102386060A CN 102386060 A CN102386060 A CN 102386060A CN 2010102750945 A CN2010102750945 A CN 2010102750945A CN 201010275094 A CN201010275094 A CN 201010275094A CN 102386060 A CN102386060 A CN 102386060A
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- interconnection structure
- metal interconnection
- groove
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Abstract
The invention provides a method for cleaning a multilayer metal interconnection structure. The method comprises the following steps of: providing the multilayer metal interconnection structure, wherein the multilayer metal interconnection structure is provided with a groove and/or through hole to be deposited with metal; removing charges, namely removing charges on the surface of the multilayer metal interconnection structure with deionized water; cleaning, namely cleaning the surface of the multilayer metal interconnection structure by adopting chemical cleaning fluid; and rinsing, namely rinsing the surface of the multilayer metal interconnection structure by adopting the deionized water. Thus, the cleaning process in the method provided by the invention can be used for effectively releasing the charges on the surface of the groove and/or through hole, byproducts on the surface of the groove and/or through hole can be removed, and other impurities can not be brought onto the surface of the groove and/or through hole.
Description
Technical field
The present invention relates to semiconductor preparing process, particularly a kind of method that cleans multilevel metal interconnection structure.
Background technology
Highgrade integration along with the semiconductor device of integrated circuit (IC) makes chip surface that more metal interconnect structure need be set, to satisfy the demand that cmos device dimension shrinks and performance improve.Thus, the multilevel metal interconnection structure that has a double damask structure becomes the focus of current research.Multilevel metal interconnection structure has become the important component part in VLSI and the ULSI (ULSI).
Be to isolate between the metal level in the advanced at present multilevel metal interconnection structure by dielectric (like the metal intermetallic dielectric layer (IMD) of low-k materials).For making the adjacent metal in the multilevel metal interconnection structure can conducting, need in metal intermetallic dielectric layer, to form groove and/or through hole, make and interconnect between the adjacent metal through in groove and/or through hole, filling metallic copper.In the preparation multilevel metal interconnection structure technology of reality; The mode that forms groove and/or through hole adopts the mode of " dry etching+wet-cleaned " more; That is, form groove and/or the through hole that needs in the metal intermetallic dielectric layer, afterwards groove and/or through hole are cleaned through dry etching.Wherein, cleaning mainly is to be used for removing the accessory substance that dry etch step produces.Fig. 1 has shown after dry etching the sketch map of the accessory substance that exists, and wherein, the accessory substance that dry etching produces has been stayed on the surface of sidewall and bottom in groove and/or the through hole.
As shown in Figure 1, Fig. 1 shows the part-structure cutaway view of multilevel metal interconnection structure 100.This multilevel metal interconnection structure 100 comprises metal connecting line layer 101, is positioned at the diffusion impervious layer 102 of metal connecting line layer 101 top, and the metal intermetallic dielectric layer 103 of diffusion impervious layer 102 tops.Wherein, be formed with groove and/or the through hole 104 that is used for depositing metal copper on the metal intermetallic dielectric layer 103.
Because groove and/or through hole more than 104 adopt the mode of dry etching to form; And actual dry etching metal intermetallic dielectric layer 103 forms in groove and/or through hole 104 processes; Can accumulate more relatively electric charge on the surface of metal intermetallic dielectric layer 103, and accessory substance 105 (accessory substance 105 has been left near the surface as groove among Fig. 1 and/or the through hole 104) arranged in the surperficial remnants of groove and/or through hole 104.The impurity of this accessory substance 105 for avoiding and remove in the preparation multilevel metal interconnection structure 100.So industry adopts chemicals and/or chemical cleaning solution to remove the accessory substance 105 on groove and/or through hole 104 surfaces usually.Yet, can bring other impurity when adopting chemicals to remove accessory substance 105, the step of promptly removing accessory substance can make this groove and/or through hole 104 remained on surface that polymer is arranged.These polymer can be deposited on the surface of groove and/or through hole 104 in the multilevel metal interconnection structure 100 again, the electric property of the multilevel metal interconnection structure 100 that influence is obtained at last.
In addition; Include other chemical substance in chemicals that uses in the above-mentioned removal accessory substance process and/or the chemical cleaning solution, like fluoride, amine, surfactant etc., if can not be all with its removal; Their can with groove and/or through hole 104 in material; Like diffusion impervious layer 102, chemical reaction takes place in the contact hole surface of filling metallic copper, causes producing the deposit phenomenon on its surface.
Therefore, in above-mentioned cleaning, accessory substance how effectively to remove multilevel metal interconnection structure further groove and/or through-hole surfaces becomes the current problem that needs solution.
Summary of the invention
In the summary of the invention part, introduced the notion of a series of reduced forms, this will further explain in the embodiment part.Summary of the invention part of the present invention does not also mean that key feature and the essential features that will attempt to limit technical scheme required for protection, does not more mean that the protection range of attempting to confirm technical scheme required for protection.
The problem that can't effectively remove for the accessory substance that solves multilevel metal interconnection structure further groove and/or through-hole surfaces; The present invention proposes a kind of method that cleans multilevel metal interconnection structure; Said method comprises: multilevel metal interconnection structure is provided, and this multilevel metal interconnection structure has groove and/or the through hole of treating plated metal;
Electric charge is removed step, wherein, adopts deionized water to remove the surface electric charge of said multilevel metal interconnection structure;
Cleaning step wherein, adopts chemical cleaning solution to clean the surface of said multilevel metal interconnection structure;
Rinse step wherein, adopts the surface of the said multilevel metal interconnection structure of rinsed with deionized water.
Further, said method also comprises drying steps, wherein, adopts the dry said multilevel metal interconnection structure of inert gas.
Further, the time of said electric charge removal step is 5-15s.
Further, said chemical cleaning solution is the aqueous solution of ST-250.
Further, the temperature of the aqueous solution of said ST-250 is 30-50 degree centigrade.
Further, the time of said cleaning step is 80-100s.
Further, said inert gas is nitrogen, helium or argon gas.And the time of said drying steps is 5-15s.
Thus, adopt the cleaning procedure described in the method for the present invention can be effectively the electric charge of groove and/or through-hole surfaces to be discharged, and can remove the accessory substance of groove and/or through-hole surfaces, can not bring other impurity.Further, the present invention again through the cleaning of deionized water, the drying of inert gas, makes chemicals can not remain near the surface of groove and/or through hole after the chemicals wet etching.Method of the present invention is saved cost and has been improved the yields of preparation multilevel metal interconnection structure effectively.
Description of drawings
Attached drawings of the present invention is used to understand the present invention at this as a part of the present invention.Embodiments of the invention and description thereof have been shown in the accompanying drawing, have been used for explaining principle of the present invention.In the accompanying drawings,
Fig. 1 is the part-structure cutaway view of multilevel metal interconnection structure;
Fig. 2 is the flow chart of the method for the cleaning multilevel metal interconnection structure in the embodiment of the invention.
Embodiment
In the description hereinafter, a large amount of concrete details have been provided so that more thorough understanding of the invention is provided.Yet, it will be apparent to one skilled in the art that the present invention can need not one or more these details and be able to enforcement.In other example,, describe for technical characterictics more well known in the art for fear of obscuring with the present invention.
In order thoroughly to understand the present invention, will in following description, detailed steps be proposed.Obviously, execution of the present invention is not limited to the specific details that the technical staff had the knack of of semiconductor applications.Preferred embodiment of the present invention is described in detail as follows, yet except these were described in detail, the present invention can also have other execution mode.
As shown in Figure 1, Fig. 1 shows the part-structure cutaway view of multilevel metal interconnection structure 100.This multilevel metal interconnection structure 100 comprises metal connecting line layer 101, is positioned at the diffusion impervious layer 102 of metal connecting line layer 101 top, and the metal intermetallic dielectric layer 103 of diffusion impervious layer top.Wherein, be formed with groove and/or the through hole 104 that is used for depositing metal copper on the metal intermetallic dielectric layer 103.The material of diffusion impervious layer 102 can be TiW, TiN, Ta, TaN etc., and metal intermetallic dielectric layer 103 can be by constituting such as the black low-k that bores (BD), fluoridizes nitride, carbon-doped oxide class (low k) material.
In the technology of actual fabrication multilevel metal interconnection structure 100, metal intermetallic dielectric layer 103 forms via dry etching after groove and/or the through hole 104, and its surface can produce more electric charge, is that example describes with the electrostatic charge in the present embodiment.In addition, there is accessory substance 105 on the surface of groove and/or through hole 104 also remnants, and this accessory substance mainly comprises C, H, F etc., and its accessory substance possibly be the residual of gas and the metal intermetallic dielectric layer reaction of the dry etching organic substance, inorganic matter or the trace metal thing that produce.
Below illustrate and how to remove electrostatic charge residual in the above-mentioned dry etch step and accessory substance 105.
At first, adopt deionized water to remove said multilevel metal interconnection structure 100 surface electric charge, promptly discharge said electric charge with contacting of multilevel metal interconnection structure through deionized water.In the present embodiment, the deionized water that preferably adopts temperature to be about 20 degrees centigrade cleans, and the time on this washed with de-ionized water multilevel metal interconnection structure surface can be about 5-15s.
Then, adopt chemical cleaning solution to clean said multilevel metal interconnection structure 100 surfaces; As, the chemicals that can adopt chemical cleaning solution to can be amine cleans the surface of said multilevel metal interconnection structure (emphasis cleans groove and/or through hole 104), to remove accessory substance 105.Said chemical cleaning solution can be the aqueous solution, like ST-250 (L121ST-250).ST-250 can obtain through U.S. ATMI semi-conducting material company.Perhaps adopt other organic cleaning fluids to clean the surface of groove and/or through hole 104, the instance of organic cleaning fluid comprises N-methyl-pyrrolidones (NMP), and it can obtain through Taiwan Merch Electronic Chemicals Ltd.The present invention does not limit the concrete composition or the concrete manufacturer of described cleaning fluid.In the present embodiment, use the ST-250 aqueous solution of 30-50 degree centigrade (preferred 40 degrees centigrade) to clean the surface of said groove and/or through hole 104, scavenging period is about 80-100s.In addition, chemical cleaning solution can also be made up of diluted acid, amine, surfactant, corrosion inhibitor, buffer, chelating agent and other additive.In some cases, can also use dilute acid solution.Select the chemical cleaning solution of which kind of prescription for use according to the main component decision of above-mentioned accessory substance 105.
Then, adopt the said multilevel metal interconnection structure of said rinsed with deionized water 100 surfaces, the preferred rinsing time is 5-15s.This deionized water can be removed the chemical cleaning solution that remains in groove and/or through hole 104 surfaces effectively, has avoided the corrosion of said chemical cleaning solution to groove and/or through hole 104 sidewalls and bottom.The preferred jet cleaning mode that adopts is carried out rinsing to said multilevel metal interconnection structure (groove and/or through hole 104) in the present embodiment.
And, adopt the dry said multilevel metal interconnection structure 100 of inert gas.Preferred inert gas can be nitrogen, argon gas, helium etc.The preferred said multilevel metal interconnection structure of nitrogen drying that adopts is about 5-15s its drying time in the present embodiment.
Need to prove: must carry out effective rinsed with deionized water to the chemical cleaning solution on multilevel metal interconnection structure surface in the present embodiment, from the surface of multilevel metal interconnection structure so that chemical cleaning solution is removed.Further; The diameter of the groove of multilevel metal interconnection structure and/or through hole 104 is that 130nm, depth-to-width ratio are 2.5～1; Or diameter is that 90nm, depth-to-width ratio are 2～1 o'clock; Preferably use SEZ DV38F system that multilevel metal interconnection structure is cleaned, then carry out rinsing, then at N with deionized water
2Be rotated oven dry in the environment.
Can reduce the time and the production cycle of obtaining satisfactory multilevel metal interconnection structure effectively through the described method of present embodiment.In addition the multilevel metal interconnection structure for preparing after the above-mentioned cleaning is carried out follow-up check and analysis, can learn that this method can improve the yields of the multilevel metal interconnection structure of preparation.
With reference to shown in Figure 2, Fig. 2 shows the flow chart of steps of the method for cleaning multilevel metal interconnection structure in the embodiment of the invention.
Step 201: multilevel metal interconnection structure is provided, and this multilevel metal interconnection structure has groove and/or the through hole of treating plated metal.
Electric charge is removed step 202: adopt deionized water to remove the surface electric charge of said multilevel metal interconnection structure.
Cleaning step 203: adopt chemical cleaning solution to clean the surface of said multilevel metal interconnection structure.
Rinse step 204, it adopts the surface of the said multilevel metal interconnection structure of rinsed with deionized water.
Further, the clean method in the present embodiment can also comprise drying steps 205: adopt the dry said multilevel metal interconnection structure of inert gas.
Method in the present embodiment is saved cost, can the multilevel metal interconnection structure surface electric charge be discharged preferably, and can and not bring other impurity at surperficial remaining any electric charge, the accessory substance of groove and/or through hole.
The multilevel metal interconnection structure of making according to aforesaid embodiment can be applicable in the multiple integrated circuit (IC).According to IC of the present invention for example is memory circuitry, like random-access memory (ram), dynamic ram (DRAM), synchronous dram (SDRAM), static RAM (SRAM) (SRAM) or read-only memory (ROM), radio circuit or the like.According to IC of the present invention can also be logical device, like programmable logic array (PLA), application-specific integrated circuit (ASIC) (ASIC), combination type DRAM logical integrated circuit (buried type DRAM) or other circuit devcie arbitrarily.IC chip according to the present invention can be used for for example consumer electronic products; In various electronic products such as personal computer, portable computer, game machine, cellular phone, personal digital assistant, video camera, digital camera, mobile phone, especially in the radio frequency products.
The present invention is illustrated through the foregoing description, but should be understood that, the foregoing description just is used for for example and illustrative purposes, but not is intended to the present invention is limited in the described scope of embodiments.It will be appreciated by persons skilled in the art that in addition the present invention is not limited to the foregoing description, can also make more kinds of variants and modifications according to instruction of the present invention, these variants and modifications all drop in the present invention's scope required for protection.Protection scope of the present invention is defined by appended claims book and equivalent scope thereof.
Claims (8)
1. a method that cleans multilevel metal interconnection structure is characterized in that, said method comprises:
Multilevel metal interconnection structure is provided, and this multilevel metal interconnection structure has groove and/or the through hole of treating plated metal;
Electric charge is removed step, wherein, adopts deionized water to remove the surface electric charge of said multilevel metal interconnection structure;
Cleaning step wherein, adopts chemical cleaning solution to clean the surface of said multilevel metal interconnection structure;
Rinse step wherein, adopts the surface of the said multilevel metal interconnection structure of rinsed with deionized water.
2. the method for claim 1 is characterized in that, said method also comprises drying steps, wherein, adopts the dry said multilevel metal interconnection structure of inert gas.
3. the method for claim 1 is characterized in that, the time that said electric charge is removed step is 5-15s.
4. the method for claim 1 is characterized in that, said chemical cleaning solution is the aqueous solution of ST-250.
5. method as claimed in claim 4 is characterized in that, the temperature of the aqueous solution of said ST-250 is 30-50 degree centigrade.
6. the method for claim 1 is characterized in that, the time of said cleaning step is 80-100s.
7. method as claimed in claim 2 is characterized in that, said inert gas is nitrogen, helium or argon gas.
8. method as claimed in claim 7 is characterized in that, the time of said drying steps is 5-15s.
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| CN2010102750945A CN102386060A (en) | 2010-09-03 | 2010-09-03 | Method for cleaning multilayer metal interconnection structure |
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| CN2010102750945A CN102386060A (en) | 2010-09-03 | 2010-09-03 | Method for cleaning multilayer metal interconnection structure |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105097426A (en) * | 2014-04-22 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | Method for eliminating figure damage defect in wet cleaning |
| CN106653562A (en) * | 2015-11-03 | 2017-05-10 | 中芯国际集成电路制造(上海)有限公司 | Method of cleaning contact hole |
| CN113506722A (en) * | 2021-06-28 | 2021-10-15 | 华虹半导体(无锡)有限公司 | Cleaning method of copper interconnection structure |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6926590B1 (en) * | 2004-06-25 | 2005-08-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of improving device performance |
| US20070232064A1 (en) * | 2006-04-03 | 2007-10-04 | Jun-Hwan Oh | Method of manufacturing a semiconductor element |
-
2010
- 2010-09-03 CN CN2010102750945A patent/CN102386060A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6926590B1 (en) * | 2004-06-25 | 2005-08-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of improving device performance |
| US20070232064A1 (en) * | 2006-04-03 | 2007-10-04 | Jun-Hwan Oh | Method of manufacturing a semiconductor element |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105097426A (en) * | 2014-04-22 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | Method for eliminating figure damage defect in wet cleaning |
| CN106653562A (en) * | 2015-11-03 | 2017-05-10 | 中芯国际集成电路制造(上海)有限公司 | Method of cleaning contact hole |
| CN113506722A (en) * | 2021-06-28 | 2021-10-15 | 华虹半导体(无锡)有限公司 | Cleaning method of copper interconnection structure |
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Effective date of registration: 20130106 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant after: Semiconductor Manufacturing International (Shanghai) Corporation Applicant after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant before: Semiconductor Manufacturing International (Shanghai) Corporation |
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Application publication date: 20120321 |