KR100847835B1 - Method for Removing Foreign Matter from Low-k Dielectric Film in Chemical Mechanical Polishing Process - Google Patents

Method for Removing Foreign Matter from Low-k Dielectric Film in Chemical Mechanical Polishing Process Download PDF

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KR100847835B1
KR100847835B1 KR1020060137329A KR20060137329A KR100847835B1 KR 100847835 B1 KR100847835 B1 KR 100847835B1 KR 1020060137329 A KR1020060137329 A KR 1020060137329A KR 20060137329 A KR20060137329 A KR 20060137329A KR 100847835 B1 KR100847835 B1 KR 100847835B1
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insulating film
dielectric constant
low dielectric
constant insulating
mechanical polishing
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KR20080062049A (en
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신종훈
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동부일렉트로닉스 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures

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Abstract

본 발명은 화학기계적 연마 공정에서 저유전율 절연막의 이물질 제거 방법에 관한 것으로, 저유전율 절연막을 증착하고 듀얼 다마신 패턴을 형성한 후, 저유전율 절연막에 함유된 탄소 성분을 제거하기 위하여 세정액을 이용하여 저유전율 절연막을 일차 처리한다. 이어서, 듀얼 다마신 패턴이 형성된 저유전율 절연막에 구리 배선을 증착하고 평탄화한 다음, 저유전율 절연막에 잔류한 이물질을 제거하기 위하여 세정액을 이용하여 저유전율 절연막을 이차 처리한다. 세정액은 희석불산(DHF) 또는 암모니아 과산화수소 혼합액(SC-1)이 바람직하다. 본 발명은 화학기계적 연마 공정에서 저유전율 절연막에 발생하는 각종 이물질을 효과적으로 제거함으로써 접착력을 향상시킬 수 있다.The present invention relates to a method for removing foreign matters of a low dielectric constant insulating film in a chemical mechanical polishing process. After depositing a low dielectric constant insulating film and forming a dual damascene pattern, a cleaning liquid is used to remove carbon components contained in the low dielectric constant insulating film. The low dielectric constant insulating film is first processed. Subsequently, a copper wiring is deposited and planarized on the low dielectric constant insulating film having the dual damascene pattern formed thereon, and then the low dielectric constant insulating film is secondaryly processed using a cleaning liquid to remove foreign substances remaining in the low dielectric constant insulating film. The washing liquid is preferably dilute hydrofluoric acid (DHF) or ammonia hydrogen peroxide mixed liquid (SC-1). The present invention can improve adhesion by effectively removing various foreign substances generated in the low dielectric constant insulating film in the chemical mechanical polishing process.

저유전율 절연막, 이물질, 희석불산(DHF), 암모니아 과산화수소 혼합액(SC-1) Low dielectric constant insulating film, foreign matter, dilute hydrofluoric acid (DHF), ammonia hydrogen peroxide mixture (SC-1)

Description

화학기계적 연마 공정에서 저유전율 절연막의 이물질 제거 방법{Method for Removing Foreign Matter from Low-k Dielectric Film in Chemical Mechanical Polishing Process}Method for Removing Foreign Matter from Low-k Dielectric Film in Chemical Mechanical Polishing Process

도 1은 종래기술에 따른 화학기계적 연마 공정에서 저유전율 절연막에 발생한 이물질을 보여주는 개념도.1 is a conceptual diagram showing a foreign matter generated in the low dielectric constant insulating film in the chemical mechanical polishing process according to the prior art.

도 2a 내지 도 2d는 본 발명의 실시예에 따른 화학기계적 연마 공정에서 저유전율 절연막의 이물질 제거 방법을 나타내는 단면도.2A to 2D are cross-sectional views illustrating a method for removing foreign matter from a low dielectric constant insulating film in a chemical mechanical polishing process according to an exemplary embodiment of the present invention.

<도면에 사용된 참조 번호의 설명><Description of Reference Number Used in Drawing>

21: 저유전율 절연막 22: 듀얼 다마신 패턴21: low dielectric constant insulating film 22: dual damascene pattern

23: 탄소 성분 24: 구리 배선23: carbon component 24: copper wiring

25: 유기물 26: 구리 입자25 organic matter 26 copper particle

본 발명은 반도체 소자의 제조 기술에 관한 것으로서, 좀더 구체적으로는 화학기계적 연마 공정에서 저유전율 절연막에 발생하는 이물질을 효과적으로 제거하는 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technology for manufacturing a semiconductor device, and more particularly, to a method for effectively removing foreign substances generated in a low dielectric constant insulating film in a chemical mechanical polishing process.

반도체 소자가 집적도가 증가함에 따라 디자인 룰(design rule)이 90nm 이하로 가면서 전통적인 알루미늄 배선과 실리콘 산화물 절연막 대신에 구리 배선과 저유전율 절연막(low-k dielectric film)이 사용되고 있다. 특히, 반도체 소자가 고집적화될수록, 금속 배선이 다층화될수록, 층간 절연막으로 저유전율 절연막의 사용은 필수적이다. 층간 절연막의 유전율이 높으면, 인접한 금속 배선 간에 형성되는 기생 용량의 증가로 인하여 신호지연이 증가하고 소자의 동작 속도가 저하된다. 따라서 90nm 이하에서는 유전율이 2.5 정도, 65nm 이하에서는 유전율이 2.0 정도인 저유전율 절연막이 요구되고 있다.As the degree of integration of semiconductor devices increases, design rules become less than 90 nm, and copper wiring and low-k dielectric films are used in place of traditional aluminum wiring and silicon oxide insulating films. In particular, as semiconductor devices are highly integrated and metal wirings are multilayered, use of a low dielectric constant insulating film as an interlayer insulating film is essential. If the dielectric constant of the interlayer insulating film is high, the signal delay increases and the operation speed of the device decreases due to the increase of parasitic capacitance formed between adjacent metal lines. Therefore, a low dielectric constant insulating film having a dielectric constant of about 2.5 at 90 nm or less and a dielectric constant of about 2.0 at 65 nm or less is required.

한편, 구리 배선은 듀얼 다마신(dual damascene) 공정을 통해 형성된다. 즉, 층간 절연막에 듀얼 다마신 패턴을 형성하고 구리를 증착한 후 화학기계적 연마(CMP) 공정으로 평탄화하여 구리 배선을 형성한다. 그런데 화학기계적 연마 공정에 사용되는 슬러리(slurry)에는 금속 부식 억제물질인 BTA(benzotriazole)가 들어 있고, 이 유기물이 저유전율 절연막에 잔류하면 후속 공정에서 접착성 문제를 일으키게 된다. 또한, 저유전율 절연막은 탄소 성분을 많이 함유하는 특성이 있는데, 이 탄소 성분도 접착성 문제를 야기할 수 있다. 또한, 구리 배선의 잔류물인 구리 입자가 저유전율 절연막에 남아 있을 때에도 유사한 문제가 발생한다.Meanwhile, copper wiring is formed through a dual damascene process. That is, a dual damascene pattern is formed on the interlayer insulating film, copper is deposited, and the copper wiring is formed by planarization by a chemical mechanical polishing (CMP) process. However, the slurry used in the chemical mechanical polishing process contains BTA (benzotriazole), a metal corrosion inhibitor, and when the organic material remains in the low dielectric constant insulating film, adhesion problems occur in subsequent processes. In addition, the low dielectric constant insulating film has a characteristic of containing a large amount of carbon components, which can also cause adhesion problems. Similar problems also occur when copper particles, which are residues of copper wiring, remain in the low dielectric constant insulating film.

이러한 각종 이물질을 제거하기 위하여 종래에는 솔벤트(solvent)를 이용하고 있다. 그러나 솔벤트를 이용한 방법은 이물질 제거 효과가 떨어질 뿐만 아니라, 단가가 높기 때문에 생산성 측면에서도 바람직하지 않다.Conventionally, solvents are used to remove such various foreign matters. However, the solvent-based method is not only inferior in the effect of removing foreign substances, but also high in cost, which is not preferable in terms of productivity.

따라서 본 발명의 목적은 화학기계적 연마 공정에서 저유전율 절연막에 발생하는 각종 이물질을 효과적으로 제거할 수 있는 방법을 제공하기 위한 것이다.Accordingly, an object of the present invention is to provide a method that can effectively remove various foreign substances generated in the low dielectric constant insulating film in the chemical mechanical polishing process.

본 발명의 다른 목적은 반도체 소자의 제조 생산성을 향상시키기 위한 것이다.Another object of the present invention is to improve the manufacturing productivity of a semiconductor device.

이러한 목적들을 달성하기 위하여, 본 발명은 다음과 같은 구성의 저유전율 절연막 이물질 제거 방법을 제공한다.In order to achieve these objects, the present invention provides a low dielectric constant insulating film foreign material removal method having the following configuration.

본 발명에 따른 화학기계적 연마 공정에서 저유전율 절연막의 이물질 제거 방법은, 저유전율 절연막을 증착하는 단계와, 상기 저유전율 절연막에 듀얼 다마신 패턴을 형성하는 단계와, 상기 저유전율 절연막에 함유된 탄소 성분을 제거하기 위하여 세정액을 이용하여 상기 저유전율 절연막을 일차 처리하는 단계와, 상기 듀얼 다마신 패턴이 형성된 저유전율 절연막에 구리 배선을 증착하고 평탄화하는 단계와, 상기 저유전율 절연막에 잔류한 이물질을 제거하기 위하여 상기 세정액을 이용하여 상기 저유전율 절연막을 이차 처리하는 단계를 포함하여 구성된다.In the chemical mechanical polishing process according to the present invention, a method for removing foreign matters of a low dielectric constant insulating film includes depositing a low dielectric constant insulating film, forming a dual damascene pattern on the low dielectric constant insulating film, and carbon contained in the low dielectric constant insulating film. Firstly treating the low dielectric constant insulating film using a cleaning solution to remove components, depositing and planarizing a copper wiring on the low dielectric constant insulating film on which the dual damascene pattern is formed, and removing foreign substances remaining in the low dielectric constant insulating film. And secondly treating the low dielectric constant insulating film using the cleaning liquid to remove the insulating film.

본 발명의 이물질 제거 방법에서 상기 세정액은 희석불산(DHF) 또는 암모니아 과산화수소 혼합액(SC-1)이 바람직하다. 또한, 상기 희석불산의 혼합비는 HF:H2O=1:400~1000, 상기 SC-1의 혼합비는 NH4OH:H2O2:H2O=1:2~4:30~40인 것이 바람직하다.In the foreign matter removal method of the present invention, the cleaning solution is preferably diluted hydrofluoric acid (DHF) or ammonia hydrogen peroxide mixed solution (SC-1). In addition, the mixing ratio of the dilute hydrofluoric acid is HF: H 2 O = 1: 400 ~ 1000, the mixing ratio of the SC-1 is NH 4 OH: H 2 O 2 : H 2 O = 1: 2 ~ 4: 30 ~ 40 is. It is preferable.

실시예Example

이하, 첨부 도면을 참조하여 본 발명의 실시예를 보다 상세하게 설명하고자 한다. 그러나 실시예를 설명함에 있어서 본 발명이 속하는 기술 분야에 익히 알려져 있고 본 발명과 직접적으로 관련이 없는 기술 내용에 대해서는 가급적 설명을 생략한다. 이는 불필요한 설명을 생략함으로써 본 발명의 핵심을 흐리지 않고 더욱 명확히 전달하기 위함이다.Hereinafter, with reference to the accompanying drawings will be described in detail an embodiment of the present invention. However, in describing the embodiments, descriptions of technical contents that are well known in the art to which the present invention pertains and are not directly related to the present invention are omitted. This is to more clearly communicate without obscure the core of the present invention by omitting unnecessary description.

도 2a 내지 도 2d는 본 발명의 실시예에 따른 화학기계적 연마 공정에서 저유전율 절연막의 이물질 제거 방법을 나타내는 단면도이다.2A to 2D are cross-sectional views illustrating a method for removing foreign substances from a low dielectric constant insulating film in a chemical mechanical polishing process according to an exemplary embodiment of the present invention.

먼저, 도 2a에 도시된 바와 같이, 층간 절연막으로서 저유전율 절연막(21)을 증착한 후, 저유전율 절연막(21)에 소정의 듀얼 다마신 패턴(22)을 형성한다. 듀얼 다마신 패턴(22)은 트렌치(trench)와 비아홀(via hole)의 이중 구조로 이루어진 패턴을 의미한다. 한편, 저유전율 절연막(21)에는 전술한 바와 같이 탄소 성분(23)이 많이 함유되어 있다.First, as shown in FIG. 2A, after the low dielectric constant insulating film 21 is deposited as an interlayer insulating film, a predetermined dual damascene pattern 22 is formed on the low dielectric constant insulating film 21. The dual damascene pattern 22 refers to a pattern having a dual structure of trenches and via holes. On the other hand, the low dielectric constant insulating film 21 contains many carbon components 23 as described above.

이어서, 도 2b에 도시된 바와 같이, 세정액을 이용하여 저유전율 절연막(21)을 일차 처리한다. 이 단계는 저유전율 절연막(21)에 함유된 탄소 성분(23)을 제거하기 위한 것이다. 이때 사용되는 세정액은 희석불산(diluted HF; DHF)이나 암모니아 과산화수소 혼합액(amonia peroxide mixture; APM, 또는 SC-1)이 바람직하다.Subsequently, as shown in FIG. 2B, the low dielectric constant insulating film 21 is first processed using a cleaning liquid. This step is for removing the carbon component 23 contained in the low dielectric constant insulating film 21. At this time, the cleaning solution used is dilute hydrofluoric acid (diluted HF; DHF) or ammonia hydrogen peroxide mixture (amonia peroxide mixture; APM, SC-1) is preferred.

DHF를 사용하는 경우의 공정조건은 다음과 같다.The process conditions for using DHF are as follows.

⊙ 혼합비: HF:H2O=1:400~1000⊙ Mixing ratio: HF: H 2 O = 1: 400 ~ 1000

⊙ 공정시간: 60~100초⊙ Processing time: 60 ~ 100 seconds

SC-1을 사용하는 경우의 공정조건은 다음과 같다.The process conditions for using SC-1 are as follows.

⊙ 혼합비: NH4OH:H2O2:H2O=1:2~4:30~40⊙ Mixing ratio: NH 4 OH: H 2 O 2 : H 2 O = 1: 2 ~ 4: 30 ~ 40

⊙ 공정시간: 60~100초⊙ Processing time: 60 ~ 100 seconds

⊙ 공정온도: 60~80℃⊙ Process temperature: 60 ~ 80 ℃

저유전율 절연막(21)은 산화막이고 통상적인 열산화막이나 TEOS 산화막보다 식각률이 높다. 따라서 통상적인 산화막보다 쉽게 제거할 수 있다. 다만 식각률이 높아 쉽게 손상을 받을 수 있으므로 저농도 세정액을 사용해야 한다. 따라서 DHF는 400:1 이상으로 희석된 것을 사용한다. SC-1은 식각률이 매우 낮으므로 저유전율 절연막(21)의 손상을 방지할 수 있다. DHF나 SC-1 세정액으로 처리하면 저유전율 절연막(21)의 표면으로부터 탄소 성분(23)을 제거하여 접착력을 향상시킬 수 있다. 또한, SC-1 세정액은 표면에 아주 적은 변화를 주기 때문에 저유전율 절연막(21)의 특성을 살릴 수 있다.The low dielectric constant insulating film 21 is an oxide film and has a higher etching rate than a conventional thermal oxide film or TEOS oxide film. Therefore, it can be removed more easily than a conventional oxide film. However, because the etching rate is high, it can be easily damaged, so a low concentration cleaning solution should be used. Therefore, DHF is used diluted to 400: 1 or more. Since SC-1 has a very low etching rate, damage to the low dielectric constant insulating film 21 can be prevented. When treated with a DHF or SC-1 cleaning liquid, the carbon component 23 can be removed from the surface of the low dielectric constant insulating film 21 to improve the adhesive force. In addition, since the SC-1 cleaning liquid makes only a small change on the surface, the characteristics of the low dielectric constant insulating film 21 can be utilized.

DHF 세정액 또는 SC-1 세정액으로 저유전율 절연막(21)을 일차 처리한 다음, 도 2c에 도시된 바와 같이 듀얼 다마신 패턴(22)이 형성된 저유전율 절연막(21)에 구리 배선(24)을 증착하고 화학기계적 연마(CMP) 공정을 이용해 구리 배선(24)을 평탄화한다. 이때, 저유전율 절연막(21)에는 유기물(25)이나 구리 입자(26)와 같은 이물질이 잔류할 수 있다. 전술한 바와 같이, 유기물(25)은 화학기계적 연마 공정에 사용되는 슬러리의 BTA 등이고, 구리 입자(26)는 구리 배선(24)의 잔류물이다.After first treating the low dielectric constant insulating film 21 with the DHF cleaning liquid or the SC-1 cleaning liquid, the copper wiring 24 is deposited on the low dielectric constant insulating film 21 on which the dual damascene pattern 22 is formed, as shown in FIG. 2C. And planarize the copper interconnects 24 using a chemical mechanical polishing (CMP) process. In this case, foreign substances such as the organic material 25 and the copper particles 26 may remain in the low dielectric constant insulating film 21. As mentioned above, the organic substance 25 is BTA etc. of the slurry used for a chemical mechanical polishing process, and the copper particle 26 is the residue of the copper wiring 24.

이러한 이물질들(25, 26)을 제거하기 위하여, 도 2d에 도시된 바와 같이 DHF 세정액 또는 SC-1 세정액으로 저유전율 절연막(21)을 이차 처리한다. 이 단계에 사용되는 세정액과 공정조건은 앞서 설명한 일차 처리 단계와 동일하다. 따라서 중복 설명을 생략한다.In order to remove these foreign substances 25 and 26, the low dielectric constant insulating film 21 is secondaryly treated with a DHF cleaning liquid or an SC-1 cleaning liquid as shown in FIG. 2D. The cleaning liquid and process conditions used in this step are the same as the primary treatment step described above. Therefore, duplicate description is omitted.

지금까지 실시예를 통하여 본 발명에 따른 화학기계적 연마 공정에서 저유전율 절연막의 이물질 제거 방법에 대하여 설명하였다. 본 명세서와 도면에는 본 발명의 바람직한 실시예에 대하여 개시하였으며, 비록 특정 용어들이 사용되었으나, 이는 단지 본 발명의 기술 내용을 쉽게 설명하고 발명의 이해를 돕기 위한 일반적인 의미에서 사용된 것이지, 본 발명의 범위를 한정하고자 하는 것은 아니다. 여기에 개시된 실시예 외에도 본 발명의 기술적 사상에 바탕을 둔 다른 변형예들이 실시 가능하다는 것은 본 발명이 속하는 기술 분야에서 통상의 지식을 가진 자에게 자명한 것이다.Thus far, a description has been given of a foreign material removal method of the low dielectric constant insulating film in the chemical mechanical polishing process according to the present invention. In the present specification and drawings, preferred embodiments of the present invention have been disclosed, and although specific terms have been used, these are merely used in a general sense to easily explain the technical contents of the present invention and to help the understanding of the present invention. It is not intended to limit the scope. It will be apparent to those skilled in the art that other modifications based on the technical idea of the present invention can be carried out in addition to the embodiments disclosed herein.

이상 설명한 바와 같이, 본 발명은 화학기계적 연마 공정에서 저유전율 절연막에 발생하는 각종 이물질을 효과적으로 제거함으로써 접착력을 향상시킬 수 있다. 또한, 종래의 솔벤트 대신에 DHF 세정액이나 SC-1 세정액을 이용하므로 반도체 소자의 제조 생산성을 향상시킬 수 있다. 또한, 저유전율 절연막의 손상을 방지하면서 저유전율 절연막의 특성을 살릴 수 있다.As described above, the present invention can improve adhesion by effectively removing various foreign substances generated in the low dielectric constant insulating film in the chemical mechanical polishing process. In addition, since the DHF cleaning liquid or the SC-1 cleaning liquid is used instead of the conventional solvent, the manufacturing productivity of the semiconductor device can be improved. In addition, the characteristics of the low dielectric constant insulating film can be utilized while preventing damage to the low dielectric constant insulating film.

Claims (5)

저유전율 절연막을 증착하는 단계;Depositing a low dielectric constant insulating film; 상기 저유전율 절연막에 듀얼 다마신 패턴을 형성하는 단계;Forming a dual damascene pattern on the low dielectric constant insulating film; 세정액을 이용하여 상기 저유전율 절연막을 일차 처리하여 상기 저유전율 절연막에 함유된 탄소 성분을 제거하는 단계;Firstly treating the low dielectric constant insulating film using a cleaning liquid to remove carbon components contained in the low dielectric constant insulating film; 상기 듀얼 다마신 패턴이 형성된 저유전율 절연막에 구리 배선을 증착하고 평탄화하는 단계; 및Depositing and planarizing a copper wiring on the low dielectric constant insulating film on which the dual damascene pattern is formed; And 상기 세정액을 이용하여 상기 저유전율 절연막을 이차 처리하여 상기 저유전율 절연막에 잔류한 이물질을 제거하는 단계를 포함하는 화학기계적 연마 공정에서 저유전율 절연막의 이물질 제거 방법.And removing the foreign matter remaining in the low dielectric constant insulating film by secondly treating the low dielectric constant insulating film by using the cleaning liquid. 제1항에 있어서, The method of claim 1, 상기 세정액은 HF 및 H2O가 혼합된 희석불산인 것을 특징으로 하는 화학기계적 연마 공정에서 저유전율 절연막의 이물질 제거 방법.The cleaning solution is a method for removing foreign substances of the low dielectric constant insulating film in a chemical mechanical polishing process, characterized in that dilute hydrofluoric acid mixed with HF and H 2 O. 제2항에 있어서,The method of claim 2, 상기 희석불산의 혼합비는 HF:H2O=1:400~1000인 것을 특징으로 하는 화학기 계적 연마 공정에서 저유전율 절연막의 이물질 제거 방법.The mixing ratio of the dilute hydrofluoric acid is HF: H 2 O = 1: 400 ~ 1000, the foreign material removal method of the low dielectric constant insulating film in the chemical mechanical polishing process, characterized in that. 제1항에 있어서,The method of claim 1, 상기 세정액은 NH4OH, H2O2 , 및 H2O가 혼합된 암모니아 과산화수소 혼합액(SC-1)인 것을 특징으로 하는 화학기계적 연마 공정에서 저유전율 절연막의 이물질 제거 방법.The cleaning liquid is NH 4 OH, H 2 O 2, and A foreign material removal method of a low dielectric constant insulating film in a chemical mechanical polishing process, characterized in that the mixture of H 2 O mixed ammonia hydrogen peroxide (SC-1). 제4항에 있어서,The method of claim 4, wherein 상기 암모니아 과산화수소 혼합액의 혼합비는 NH4OH:H2O2:H2O=1:2~4:30~40인 것을 특징으로 하는 화학기계적 연마 공정에서 저유전율 절연막의 이물질 제거 방법.The mixing ratio of the ammonia hydrogen peroxide mixed solution is NH 4 OH: H 2 O 2 : H 2 O = 1: 2 ~ 4:30 ~ 40 foreign matter removal method of the low dielectric constant insulating film in the chemical mechanical polishing process, characterized in that.
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KR20000046075A (en) * 1998-12-31 2000-07-25 김영환 Method for forming copper metal interconnect of semiconductor device
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KR20060078856A (en) * 2004-12-30 2006-07-05 동부일렉트로닉스 주식회사 Cleaning method for removal of cu residue

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Publication number Priority date Publication date Assignee Title
KR20000046075A (en) * 1998-12-31 2000-07-25 김영환 Method for forming copper metal interconnect of semiconductor device
KR20030001136A (en) * 2001-06-28 2003-01-06 주식회사 하이닉스반도체 Method for fabricating thin film transistor
KR20060078856A (en) * 2004-12-30 2006-07-05 동부일렉트로닉스 주식회사 Cleaning method for removal of cu residue

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