CN102371254A - Cleaning system and method - Google Patents
Cleaning system and method Download PDFInfo
- Publication number
- CN102371254A CN102371254A CN2010102509145A CN201010250914A CN102371254A CN 102371254 A CN102371254 A CN 102371254A CN 2010102509145 A CN2010102509145 A CN 2010102509145A CN 201010250914 A CN201010250914 A CN 201010250914A CN 102371254 A CN102371254 A CN 102371254A
- Authority
- CN
- China
- Prior art keywords
- deionized water
- outlet
- inlet
- mixing
- high temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention discloses a cleaning system, which comprises a deionized water storage tank, a CO2 gas cylinder, a control device, a cleaning chamber and a jet device, wherein the control device is used for heating CO2 to reach a high-temperature state; the jet device is used for jetting mixed fluid containing deionized water and CO2 in the high-temperature state to the cleaning chamber; an outlet of the deionized water storage tank and an outlet of the CO2 gas cylinder are connected with an inlet of the jet device; and an outlet of the jet device is connected with an inlet of the cleaning chamber. The invention also discloses a cleaning method, which comprises the following steps of: forming CO2 in the high-temperature; forming the mixed fluid containing the deionized water and the high-temperature CO2; and treating a sample by using the mixed fluid. According to the cleaning system and method disclosed by the invention, organic photoresist on an inorganic carbonized thick layer and the bottom and cured and crosslinked SU-8 can be completely peeled off, the photoresist removing efficiency is greatly improved, no residue exists, and the loss of a substrate material is minimized.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly a kind of purging system and method.
Background technology
In the cmos device, nearly all substrat structure all injects via ion and forms in modern times.Energetic ion can damage photoresist, it is become be difficult to remove.After injecting, these ions can exist with forms such as oxide layer, inferior oxide layer or organic compounds.These energetic ions also can make the photoresist surface become the carbon layer that a kind of diamond-type mixes with graphite mould.Therefore carbonization technique makes the removal of injecting photoresist become to have very much challenge.Remove for the injection photoresist on the silicon, can use alkalescence or acid fluorine-based solution to realize, but can cause loss bottom silicon; Also can use the removing of photoresist by plasma technology, but the electric charge that inhomogeneous plasma produces can damage the sensitive structure of crystal column surface.
Summary of the invention
One of the object of the invention provides a kind of being reduced in when print cleaned, and the print base material is caused the purging system and the method for damage.
According to an aspect of the present invention, provide a kind of purging system to comprise:
Deionized water storage tank, CO
2Gas cylinder, be used for CO
2Heating also makes control device, the wash chamber of its state that reaches a high temperature and is used for the CO that contains the deionized water and the condition of high temperature
2Fluid-mixing be ejected into the injection apparatus of wash chamber; The outlet of said deionized water storage tank and said CO
2The outlet of gas cylinder is connected with the inlet of said injection apparatus; The outlet of said injection apparatus is connected with the inlet of said wash chamber.
According to an aspect of the present invention, provide a kind of cleaning method to comprise:
Form the CO of the condition of high temperature
2
Formation contains deionized water and said high temperature CO
2Fluid-mixing; And
Use said fluid-mixing that print is carried out clean.
According to purging system of the present invention and method, can the SU-8 of inorganic carbide thick-layer and bottom organic photoresist and curing cross-linked all be peeled off, the efficient of removing photoresist improves greatly, noresidue, the minimization of loss of base material.
Description of drawings
Fig. 1 is the structural representation of the purging system that provides of the embodiment of the invention;
The object of the invention, function and advantage will combine embodiment, further specify with reference to accompanying drawing.
The specific embodiment
As shown in Figure 1, the purging system that the embodiment of the invention provides comprises: the deionized water storage tank 7, the CO that are used to store deionized water
2Gas cylinder 18 (the CO that provides
2Gas purity reaches more than 99.999%), be used for CO
2Heating also makes control device, the wash chamber 13 of its state that reaches a high temperature and is used for the CO that contains the deionized water and the condition of high temperature
2Fluid-mixing be ejected into wash chamber 13 injection apparatus 10, be used to carry the auxiliary current-carrying device of deionized water and the CO of deionized water
2Retracting device.
Wherein, deionized water storage tank 7 is provided with pressure gauge 2.
Control device comprises heat exchanger 17 (be used to heat carbon dioxide, make carbon dioxide reach 100～400 ℃), pressure-reducing valve 20, filter 4, valve 5 and pressure gauge 2.Wherein, CO
2The outlet of gas cylinder 18 is connected with the inlet of heat exchanger 17 through pressure gauge 2, pressure-reducing valve II 20, filter 4 successively.The outlet of heat exchanger 17 is connected with the inlet of accurate blender through valve 5, pressure gauge 2 successively.Heat exchanger 17 is provided with pressure gauge 2.
The auxiliary current-carrying device of deionized water comprises N
2Gas cylinder 1 (is used to provide the N that carries deionized water
2), pressure gauge 2, pressure-reducing valve I3, filter 4, valve 5 and flowmeter 9 (flow that is used for the control piper fluid).N
2The outlet of gas cylinder 1 is connected with the inlet of deionized water storage tank 7 through pressure gauge 2, pressure-reducing valve I3, filter 4, valve 5 successively, and the outlet of deionized water storage tank 7 is connected with the inlet of accurate blender through valve 5, flowmeter 9 successively.
Be provided with the rotatable pallet 12 that is used for fixing print 11 in the wash chamber 13.Pallet 12 is positioned under the nozzle.Nozzle comprises a swivel joint, and nozzle can carry out motion scan according to step motor type, and nozzle be changed detachably around 360 ° of rotations of axis of swivel joint.
CO
2Retracting device comprises that gas-liquid separator 28 (is used to separate remaining deionized water and CO
2Fluid-mixing), filter purification devices 24 (adopt drier powder, glass fibre, molecular sieve or gather tetrafluoro etc., be used for) and cold EGR 27 (being used to impel gas-liquid separation) to carbon dioxide drying and purifying.The inlet of gas-liquid separator 28 is connected with the outlet of wash chamber 13.The outlet of gas-liquid separator 28 is connected with the inlet that filters purification devices 24.The outlet of gas-liquid separator 28 is connected with the inlet of a waste liquid tank 25.The outlet of waste liquid tank 25 is connected with the inlet of a draining valve 26.The outlet of filtering purification devices 24 is connected with heat exchanger 17 through a check valve 23.The outlet of filtering purification devices 24 is connected with heat exchanger 17 through a valve 5.(effect mainly is to make water and carbon dioxide separation abundant to cold EGR 27; Its critical piece has compressor, blower fan, cold circulation pipe etc.) be connected with gas-liquid separator 28.
The embodiment of the invention also provides a kind of cleaning method, may further comprise the steps:
The CO of step S1, the formation condition of high temperature
2
Step S2, formation contain deionized water and said high temperature CO
2Fluid-mixing.And
Step S3, the said fluid-mixing of use carry out clean to the print top layer.Wherein, the CO of the deionized water of clean and high temperature
2CO in the fluid-mixing
2Temperature to reach be 100～400 ℃ (for example, 100 ℃, 200 ℃, 300 ℃, 350 ℃, 400 ℃); Deionized water and CO
2Ratio be 40～90% (for example, 40%, 50%, 60%, 70%, 80%, 90%).
Step S4, to carrying out CO contained in the cleaned fluid-mixing
2Reclaim.
Based on system shown in Figure 1 this cleaning method is elaborated with following concrete example.
Embodiment 1
This procedure is following: print 11 is put into pallet 12 and fixing, and whether pallet 12 is selected to rotate as required; Temperature value through setting heat exchanger 17 heats heat exchanger 17, when temperature reaches temperature required, regulates pressure-reducing valve I3 and pressure-reducing valve II20, regulates flowmeter 9; This moment N
2Will be through valve 5; And through flowmeter 9 control flows; Carry deionized water to flow in the accurate blender in the injection apparatus 10; Carbon dioxide absorbs the high-temperature gas that heat forms 100 ℃ through over-heat-exchanger 17, then successively through in the accurate blender in valve 5, the pressure gauge 2 inflow injection apparatus 10; The CO of deionized water and high temperature
2Through the control of accurate blender, mixing chamber's control and to mix the formation ratio is 40% fluid-mixing, then through nozzle with high velocity jet to the print 11 that is fixed on the pallet 12, print is carried out clean; Nozzle can be around 360 ° of rotations of axis of swivel joint, can scan to move to clean, and can dismounting and change; Product in the wash chamber 13 (mainly comprises carbon dioxide; Water be stripped from the particles such as photoresist that get off) in gas-liquid separator 28, handle; Promote the separation of gas-liquid through cold EGR 27; Flow back to again in the heat exchanger 17 after purification devices 24 carries out drying and purifying through filtering through the carbon dioxide after the separating treatment, realize that carbon dioxide recycles.
Embodiment 2
This procedure is following: print 11 is put into pallet 12 and fixing, and whether pallet 12 is selected to rotate as required; Temperature value through setting heat exchanger 17 heats heat exchanger 17, when temperature reaches temperature required, regulates pressure-reducing valve I3 and pressure-reducing valve II20, regulates flowmeter 9; This moment N
2Will be through valve 5; And through flowmeter 9 control flows; Carry deionized water to flow in the accurate blender in the injection apparatus 10; Carbon dioxide absorbs the high-temperature gas that heat forms 150 ℃ through over-heat-exchanger 17, then successively through in the accurate blender in valve 5, the pressure gauge 2 inflow injection apparatus 10; The CO of deionized water and high temperature
2Through the control of accurate blender, mixing chamber's control and to mix the formation ratio is 50% fluid-mixing, then through nozzle with high velocity jet to the print 11 that is fixed on the pallet 12, print is carried out clean; Nozzle can be around 360 ° of rotations of axis of swivel joint, can scan to move to clean, and can dismounting and change; Product in the wash chamber 13 is handled in gas-liquid separator 28; Promote the separation of gas-liquid through cold EGR 27; Flow back to again in the heat exchanger 17 after purification devices 24 carries out drying and purifying through filtering through the carbon dioxide after the separating treatment, realize that carbon dioxide recycles.
Embodiment 3
This procedure is following: print 11 is put into pallet 12 and fixing, and whether pallet 12 is selected to rotate as required; Temperature value through setting heat exchanger 17 heats heat exchanger 17, when temperature reaches temperature required, regulates pressure-reducing valve I3 and pressure-reducing valve II20, regulates flowmeter 9; This moment N
2Will be through valve 5; And through flowmeter 9 control flows; Carry deionized water to flow in the accurate blender in the injection apparatus 10; Carbon dioxide absorbs the high-temperature gas that heat forms 200 ℃ through over-heat-exchanger 17, then successively through in the accurate blender in valve 5, the pressure gauge 2 inflow injection apparatus 10; The CO of deionized water and high temperature
2Through the control of accurate blender, mixing chamber's control and to mix the formation ratio is 60% fluid-mixing, then through nozzle with high velocity jet to the print 11 that is fixed on the pallet 12, print is carried out clean; Nozzle can be around 360 ° of rotations of axis of swivel joint, can scan to move to clean, and can dismounting and change; Product in the wash chamber 13 is handled in gas-liquid separator 28; Promote the separation of gas-liquid through cold EGR 27; Flow back to again in the heat exchanger 17 after purification devices 24 carries out drying and purifying through filtering through the carbon dioxide after the separating treatment, realize that carbon dioxide recycles.
Embodiment 4
This procedure is following: print 11 is put into pallet 12 and fixing, and whether pallet 12 is selected to rotate as required; Temperature value through setting heat exchanger 17 heats heat exchanger 17, when temperature reaches temperature required, regulates pressure-reducing valve I3 and pressure-reducing valve II20, regulates flowmeter 9; This moment N
2Will be through valve 5; And through flowmeter 9 control flows; Carry deionized water to flow in the accurate blender in the injection apparatus 10; Carbon dioxide absorbs the high-temperature gas that heat forms 400 ℃ through over-heat-exchanger 17, then successively through in the accurate blender in valve 5, the pressure gauge 2 inflow injection apparatus 10; The CO of deionized water and high temperature
2Through the control of accurate blender, mixing chamber's control and to mix the formation ratio is 90% fluid-mixing, then through nozzle with high velocity jet to the print 11 that is fixed on the pallet 12, print is carried out clean; Nozzle can be around 360 ° of rotations of axis of swivel joint, can scan to move to clean, and can dismounting and change; Product in the wash chamber 13 is handled in gas-liquid separator 28; Promote the separation of gas-liquid through cold EGR 27; Flow back to again in the heat exchanger 17 after purification devices 24 carries out drying and purifying through filtering through the carbon dioxide after the separating treatment, realize that carbon dioxide recycles.
Cleaning method that the embodiment of the invention provides and system thereof; Utilize the high-speed jet percussion of the superior diffusivity of carbon dioxide, low viscosity and permeability and fluid-mixing; Can the SU-8 of inorganic carbide thick-layer and bottom organic photoresist and curing cross-linked all be peeled off; The efficient of removing photoresist improves greatly, noresidue, the minimization of loss of base material; Omit cineration step and can reduce damage greatly substrate; This process does not have the formation of oxide layer, and mean square deviation roughness and silicon loss are lower; Injection photoresist figure to especially little also has the effect of well removing photoresist.The photoresist that effective and rapid is removed after high dose injection and the curing will provide prospective technology and scheme for the technology of removing photoresist of 22nm, and also help to promote the extensive use of SU-8 glue in the MEMS technology.
The foregoing description is a preferred implementation of the present invention; But embodiment of the present invention is not restricted to the described embodiments; Other any do not deviate from change, the modification done under spirit of the present invention and the principle, substitutes, combination, simplify; All should be the substitute mode of equivalence, be included within protection scope of the present invention.
Claims (10)
1. a purging system is characterized in that, comprising:
Deionized water storage tank, CO
2Gas cylinder, be used for CO
2Heating also makes control device, the wash chamber of its state that reaches a high temperature and is used for the CO that contains the deionized water and the condition of high temperature
2Fluid-mixing be ejected into the injection apparatus of wash chamber; The outlet of said deionized water storage tank and said CO
2The outlet of gas cylinder is connected with the inlet of said injection apparatus; The outlet of said injection apparatus is connected with the inlet of said wash chamber.
2. purging system according to claim 1 is characterized in that, also comprises:
Deionized water is assisted the current-carrying device, and the auxiliary current-carrying device of said deionized water comprises N
2Gas cylinder, filter; Said N
2The outlet of gas cylinder is connected with the inlet of said deionized water storage tank through said filter.
3. purging system according to claim 1 is characterized in that, said control device comprises:
Heat exchanger and filter; The inlet of said heat exchanger is through said filter and said CO
2The outlet of gas cylinder connects; The outlet of said heat exchanger is connected with the inlet of said injection apparatus.
4. purging system according to claim 3 is characterized in that, said injection apparatus comprises:
Be used for CO with the said deionized water and the condition of high temperature
2The mixing chamber of mixing, be used to control the CO of the said deionized water and the condition of high temperature
2The accurate blender and the nozzle that mix; The inlet of said accurate blender is connected with the outlet of said heat exchanger; The inlet of said accurate blender also is connected with the outlet of said deionized water storage tank; The outlet of said accurate blender is connected with the inlet of said mixing chamber; The inlet of said nozzle is connected with the outlet of said mixing chamber, will contain the CO of the deionized water and the condition of high temperature
2Fluid-mixing be ejected into said wash chamber.
5. purging system according to claim 4 is characterized in that:
Said wash chamber is provided with the rotatable pallet that is used for fixing print; Said pallet is positioned under the said nozzle; Said nozzle comprises a swivel joint, and said nozzle can carry out motion scan according to step motor type, and said nozzle be changed detachably around 360 ° of rotations of axis of said swivel joint.
6. according to each described purging system of claim 3-5, it is characterized in that:
Also comprise CO
2Retracting device, said CO
2Retracting device comprises gas-liquid separator, filters purification devices and cold EGR; The inlet of said gas-liquid separator is connected with the outlet of said wash chamber; The outlet of said gas-liquid separator is connected with the inlet of said filtration purification devices; The outlet of said gas-liquid separator is connected with the inlet of a waste liquid tank; The outlet of said filtration purification devices is connected with said heat exchanger through a check valve; The outlet of said filtration purification devices is connected with said heat exchanger through a valve; Said cold EGR is connected with said gas-liquid separator.
7. according to each described purging system of claim 1-5, it is characterized in that:
The said CO that is in the condition of high temperature
2Temperature be 100～400 ℃; Deionized water and CO in the said fluid-mixing
2Ratio be 40～90%.
8. a cleaning method is characterized in that, comprising:
Form the CO of the condition of high temperature
2
Formation contains deionized water and said high temperature CO
2Fluid-mixing; And
Use said fluid-mixing that print is carried out clean.
9. method according to claim 8 is characterized in that, also comprises:
To contained CO in the cleaned said fluid-mixing
2Reclaim.
10. it is characterized in that according to Claim 8 or 9 described methods:
The said CO that is in the condition of high temperature
2Temperature be 100～400 ℃; Deionized water and CO in the said fluid-mixing
2Ratio be 40～90%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010250914 CN102371254B (en) | 2010-08-11 | 2010-08-11 | Cleaning system and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010250914 CN102371254B (en) | 2010-08-11 | 2010-08-11 | Cleaning system and method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102371254A true CN102371254A (en) | 2012-03-14 |
| CN102371254B CN102371254B (en) | 2013-08-14 |
Family
ID=45790804
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010250914 Expired - Fee Related CN102371254B (en) | 2010-08-11 | 2010-08-11 | Cleaning system and method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102371254B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102641823A (en) * | 2012-05-14 | 2012-08-22 | 中国科学院微电子研究所 | Microwave photoresist uniformizing device and photoresist uniformizing method |
| CN115077207A (en) * | 2022-06-20 | 2022-09-20 | 合肥维信诺科技有限公司 | Cleaning and drying system and cleaning and drying method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020048731A1 (en) * | 1997-05-27 | 2002-04-25 | William H Mullee | Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process |
| WO2004008249A2 (en) * | 2002-07-17 | 2004-01-22 | Scp Global Technologies, Inc. | Compositions and method for removing photoresist and/or resist residue |
| CN1494733A (en) * | 2001-12-03 | 2004-05-05 | ��ʽ�������Ƹ��� | High-pressure treatment method |
| CN1628000A (en) * | 2001-02-15 | 2005-06-15 | 米歇尔技术公司 | Methods for cleaning microelectronic structures |
| EP1844850A1 (en) * | 2006-04-13 | 2007-10-17 | Air Products and Chemicals, Inc. | Cleaning of contaminated articles by aqueous supercritical oxidation |
| CN101740342A (en) * | 2008-11-26 | 2010-06-16 | 中国科学院微电子研究所 | Green carbon dioxide supercritical fluid semiconductor cleaning equipment |
-
2010
- 2010-08-11 CN CN 201010250914 patent/CN102371254B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020048731A1 (en) * | 1997-05-27 | 2002-04-25 | William H Mullee | Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process |
| CN1628000A (en) * | 2001-02-15 | 2005-06-15 | 米歇尔技术公司 | Methods for cleaning microelectronic structures |
| CN1494733A (en) * | 2001-12-03 | 2004-05-05 | ��ʽ�������Ƹ��� | High-pressure treatment method |
| WO2004008249A2 (en) * | 2002-07-17 | 2004-01-22 | Scp Global Technologies, Inc. | Compositions and method for removing photoresist and/or resist residue |
| EP1844850A1 (en) * | 2006-04-13 | 2007-10-17 | Air Products and Chemicals, Inc. | Cleaning of contaminated articles by aqueous supercritical oxidation |
| CN101740342A (en) * | 2008-11-26 | 2010-06-16 | 中国科学院微电子研究所 | Green carbon dioxide supercritical fluid semiconductor cleaning equipment |
Non-Patent Citations (1)
| Title |
|---|
| 刘建慧等: "超临界二氧化碳在微电子技术中的应用", 《应用化工》, no. 03, 28 March 2008 (2008-03-28) * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102641823A (en) * | 2012-05-14 | 2012-08-22 | 中国科学院微电子研究所 | Microwave photoresist uniformizing device and photoresist uniformizing method |
| CN102641823B (en) * | 2012-05-14 | 2015-10-28 | 中国科学院微电子研究所 | A kind of even adhesive dispenser of microwave and even gluing method |
| CN115077207A (en) * | 2022-06-20 | 2022-09-20 | 合肥维信诺科技有限公司 | Cleaning and drying system and cleaning and drying method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102371254B (en) | 2013-08-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101276742B (en) | Substrate processing apparatus | |
| KR100837346B1 (en) | Device and method for recycling silicon sludge | |
| CN101681808B (en) | Regenerating process and regenerating system to regenerate waste slurry from semiconductor wafer manufacturing process | |
| CN104759187B (en) | Organic exhaust gas density Adjusting System | |
| CN101068630A (en) | Method, apparatus, and system for bi-solvent based cleaning of precision components | |
| CN101399183B (en) | Substrate treating apparatus and substrate treating method | |
| CN102371254B (en) | Cleaning system and method | |
| TW202013491A (en) | Substrate processing apparatus and substrate processing method | |
| CN103721427B (en) | The renovation process of anticorrosive additive stripping liquid controlling and regenerating unit | |
| KR101654422B1 (en) | Water washing method of crudede oil tank and system thereof | |
| JP2010089075A (en) | Method of recovering liquid crystal from waste lcd panel | |
| CN102476108A (en) | High-temperature vapor-water mixed jet cleaning system and method | |
| KR101501650B1 (en) | Carbon dioxide capturing device reusing washing water using membrane filtration | |
| CN102466988A (en) | High temperature vapor and water mixed jet cleaning system and method thereof | |
| TW200946254A (en) | Cleaning method and cleaning system for electronic part | |
| CN102428042A (en) | Method for purifying waste silicon slurry | |
| CN206454458U (en) | A kind of water-saving circulation device for water-ring vacuum pump | |
| CN109127608A (en) | Cleaning oil tank system and its cleaning process | |
| CN102338993A (en) | Device and method for removing glue from sample wafer | |
| CN209396893U (en) | A kind of silicon powder devil liquor recovery equipment | |
| CN106348393A (en) | Membrane distillation system and membrane distillation method | |
| KR102075679B1 (en) | Substrate treating apparatus and chemical recycling method | |
| CN102299051A (en) | Method and device for drying micro-electronic part | |
| KR100898053B1 (en) | Method for refining silicon sludge | |
| KR100901123B1 (en) | Apparatus for refining silicon sludge |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130814 Termination date: 20200811 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |