CN1023653C - Adjustable opposite magnetically-controlled sputtering source and relevant filming process - Google Patents
Adjustable opposite magnetically-controlled sputtering source and relevant filming process Download PDFInfo
- Publication number
- CN1023653C CN1023653C CN 88103800 CN88103800A CN1023653C CN 1023653 C CN1023653 C CN 1023653C CN 88103800 CN88103800 CN 88103800 CN 88103800 A CN88103800 A CN 88103800A CN 1023653 C CN1023653 C CN 1023653C
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- Prior art keywords
- target
- targets
- sputtering source
- magnetron sputtering
- film
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- Expired - Fee Related
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- 238000004544 sputter deposition Methods 0.000 title claims abstract description 12
- 238000000034 method Methods 0.000 title abstract description 5
- 230000005291 magnetic effect Effects 0.000 claims abstract description 20
- 239000000203 mixture Substances 0.000 abstract description 13
- 238000001755 magnetron sputter deposition Methods 0.000 abstract description 11
- 239000000463 material Substances 0.000 abstract description 8
- 229910045601 alloy Inorganic materials 0.000 abstract description 3
- 239000000956 alloy Substances 0.000 abstract description 3
- 238000000576 coating method Methods 0.000 abstract description 2
- 239000003302 ferromagnetic material Substances 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000007747 plating Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 11
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 5
- 238000007599 discharging Methods 0.000 description 5
- 239000010949 copper Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910000570 Cupronickel Inorganic materials 0.000 description 2
- 230000005294 ferromagnetic effect Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 230000003319 supportive effect Effects 0.000 description 1
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Abstract
The present invention relates to an adjustable opposite magnetron sputtering source and a film plating method thereof, which belongs to the field of a metal coating of a material. The adjustable opposite magnetron sputtering source is a novel magnetron sputtering device which is characterized in that a pair of plane targets is oppositely arranged, a magnetic field perpendicular to the target surfaces is formed between the two plane targets, and the two plane targets and exciting currents can be adjusted respectively and continuously by power supplies thereof. The adjustable opposite magnetron sputtering source has the characteristics that theuseplane rate of the targets is high because of the homogeneous consumption of the plane targets, and ferromagnetic materials can be conveniently sputtered, etc.In addition, the adjustable opposite magnetron sputtering source has the obvious advantages that an optimum sputtering rate can be obtained by means of a magnetic focusing principle in symmetrical discharge, and components of a film can be continuously adjusted within a large range in asymmetric discharge. The method can be used for preparing a film, particularly superconducting films and other films prepared from specific alloy composition.
Description
The invention belongs to the field of coatings for metals of material, be a kind of sputtering source.
Magnetron sputtering be a kind of on matrix the technology of plated film.Its principle is: matrix and target are installed in the vacuum chamber, are being in low-pressure state (1.33～1.33X10
-2Handkerchief) forms positive and negative ion or ion and electronics in the glow discharge of gas.Positive ion bombardment makes atom be radiated out as the target of negative electrode, forms film on matrix.Structure by sputtering target is classified, and magnetron sputtering has four kinds of patterns at present:
1, planar target magnetron sputtering;
2, cylindrical target magnetron sputtering;
3, S-gun-type magnetic control sputtering;
4, subtend magnetron sputtering;
Above-mentioned 1,2,3 kind of pattern widespread use, but it is low also to exist target utilization, and sputter rate changes with the consumption of target, is difficult for shortcomings such as sputter ferromagnetic material.The 4th kind of pattern such as the clear 62-188776A of Japanese Patent and clear 61-279674A have then overcome above shortcoming, have done improvement.But in this pattern,, and use the fixed permanent magnet because upper and lower target is used a current potential jointly, magnetic field is fixed, thereby target is in a single day selected, the composition of affiliated film just can't change, a pair of target can only obtain a kind of film of composition, and is very inconvenient sometimes when preparing different target.On the other hand, because magnetic field can't change, electronics can not move under focus state, thereby under the condition of given vacuum tightness and target voltage, gained generally is not best sputter rate.
The present invention has done significant improvement on the basis of the 4th kind of pattern, its main points are:
On device: 1, replace permanent magnetism, make magnetic field adjustable continuously with electromagnetism;
2, two targets add different adjustable voltage (shell is a zero potential) respectively;
3, add in two targets one or more compensation targets to get rid of two targets because the mutually pollution that causes of sputter and the mutual interference of electrical parameter.
On method: 1, obtain best sputter rate with magnetic focusing;
2, with asymmetric discharge obtaining the sputter rate that upper and lower target differs greatly, thereby continuously change the thin film composition ratio on a large scale.
By above improvement, can be in magnetron sputtering by changing electrical parameter and continuously change easily the composition of (or adjusting) gained film, with the performance index of aspects such as the physics that reaches expection, chemistry, machinery.
Detailed description of the invention is described below:
Referring to accompanying drawing 1, the planar targets made from certain material (comprising ferromagnetic substance) (negative electrode) (5), the pole shoe made from pure iron (3) waits a target in formation subtend magnetic control sources with solenoid (1) or (2), anode shield cover (4).The target opposing parallel that two identical or different materials are made is placed and has been formed the subtend controlled sputtering source, and the position of one of them target can be regulated along the target axis, to change the distance between two targets.
(7) are water-cooled tubes in the accompanying drawing 1, and (8) are the target supportive devices, and (6) are substrate (being the plated body body).Two targets and current coil thereof connect separately independently power supply (but when doing the symmetry discharge, two targets can with a target power supply, two shared magnetic field power supplies of coil) respectively.
This subtend magnetic control source principle of work is: at 1.33～1.33X10
-2In the vacuum vessel of handkerchief, because gas glow discharge produces electronics.The magnetic line of force that magnetic field produces is perpendicular to target surface, and the electronics after being quickened by electric field is that axle is for the helical movement with the magnetic line of force under electromagnetic field effect; This has just prolonged electron motion distance and life-span, has increased the collision opportunity of electronics and gas molecule, thereby has increased discharging current, forms high density plasma between two targets.Positive ion in the plasma body is then quickened the bombardment target surface by electric field and produces splash effect, and the target atom that sputters out is deposited on and produces film on the substrate.
The electronics focussing force is played in magnetic field among the present invention.When magneticstrength is suitable, can makes electronics as much as possible fly to target surface and be reflected.Accompanying drawing two is that target voltage (V) is got certain value when the i.e. symmetry discharge of the identical voltage of two target bands, and two target discharging current sums (I) are with magnetizing current (I
B) (Ar Pressure is 10.6X10 for the curve that changes
-2Handkerchief).Utilize the magnetic focusing principle, change magneticstrength, just can be at low target voltage (about 300 volts) or high vacuum (6.65X10
-2Handkerchief) discharges down, and can regulate discharging current, also can obtain maximum discharge current.
Two target coils of the present invention (1), (2) add magnetizing current, and it is vertical with target surface to form continuously adjustable magnetic field between target, or uses other modes, as add the way of magnetizing coil at whole vacuum (-tight) housing, form the adjustable electric magnetic field perpendicular to target surface between two targets.
Plasma zone change of shape contrast when accompanying drawing 3 and accompanying drawing 4 are symmetry discharge and asymmetric discharge.When the i.e. symmetry discharge of the identical voltage of two target bands, plasma zone (15) shape such as accompanying drawing 3 are regulated magnetizing current this moment rightly, and electronics focuses at target surface can obtain best sputter rate.When the different voltages of two target bands are asymmetric discharge, plasma zone (15) shape is tapered, as accompanying drawing 4, cooperate the magnetizing current of adjusting in two target coils (1) and (2) this moment, two target discharging currents are differed greatly, the sputter that the upper and lower target of heterogeneity differs greatly can be caused, just the film that component proportions differs greatly can be obtained.
In sputter equipment of the present invention, as accompanying drawing 5, between two targets, insert the compensation target, the compensation target connects another power supply, just can regulate the thin film composition ratio in quite wide (being bordering on 0～100%) scope.
With sputter copper, nickelalloy is embodiment.Referring to accompanying drawing 5, last target (negative electrode) (5) material is a copper, and following target (negative electrode) (5) material is a nickel, and two sides (11) and (12) of the corresponding upper and lower target of compensation target (9) also are respectively copper and mickel.Accompanying drawing 6 is the structure iron of compensation target, and (11) are identical with last target material among the figure, and (12) are identical with following target material, and (13) are water-cooled tube, the double as supporting rack.Compensation target (9) connects power supply (10), as accompanying drawing 5.Select a suitable compensation target voltage, and regulate upward target and target voltage down, can make the discharging current difference of upper and lower target, the sputter rate of two kinds of alloys is also different, so obtain the alloy firm of a certain composition.Present embodiment has obtained cupric 7%(WT%)～97%(WT%) cupronickel film.
Following table is the measured data of regulating composition under the above-mentioned different target condition continuously.
Target (Ni) parameter copper nickel under target (Cu) parameter on the real Ar Pressure
Sample is tested (handkerchief) electric current and voltage driving voltage current excitation and is contained
Product are counted electric current magnitude of current amount
Compile according to (V) (mA) (A) (V) (mA) (A) (Wt%) (Wt%)
Number
1 8.2×10
-10 0 2.2 900 40 2.5 7 93
2 6.6×10
-1373 10 3.1 765 40 2.3 22 78
3 6.6×10
-1600 20 2.9 800 30 2.9 57 43
4 6.6×10
-1570 26 2.8 570 26 2.8 70 30
5 6.6×10
-1700 42 2.4 0 0 3.6 97 3
The compensation target can avoid a kind of target to be splashed to the pollution that causes on the another kind of target, because the shielding effect of electric field also can make two-part discharge independent regulation up and down, does not disturb mutually again.
If increase the number of compensation target, also can regulate two or more compositions.
Sputter equipment of the present invention does not all have particular requirement to the shape and the thickness of target.
Because magnetic line of force is vertical with target surface, target has become the part of pole shoe, thereby can the sputter ferromagnetic substance, and the consumption of target is even, utilization ratio nearly 100%.
The various performances of material mainly depend on its composition, tissue and structure.In film preparation, the composition of control material accurately, changing composition easily, on a large scale is the important means of preparation film.The present invention will particularly play a significant role in the preparation of the specific synthetic golden composition film of superconducting thin film at magneticsubstance.
In the sputter equipment of the present invention, because plated body body (substrate) (6) is placed on around the upper and lower target, referring to accompanying drawing 1 and accompanying drawing 5, suitably increase upper and lower range, a plurality of plated body bodies are laid around can making in corresponding increase magnetic field, raise the efficiency, can form mass production capabilities, in industry, use.
Claims (5)
1, a kind of subtend controlled sputtering source is characterized in that the target that this controlled sputtering source is placed by two parallel subtends forms, and each target is made up of planar targets (negative electrode) (5), pole shoe (3), solenoid (1) [or (2)] and anode shield cover (4).
2,, it is characterized in that each target adds continuously adjustable voltage respectively according to the said sputtering source of claim 1.
3, according to claim 1 or 2 said sputtering sources, it is characterized in that solenoid adds continuously adjustable magnetizing current, between two targets, form magnetic field perpendicular to target surface.
4,, it is characterized in that inserting the compensation target between two targets that subtend places according to claim 1 or 2 said sputtering sources.
5,, it is characterized in that inserting the compensation target between two targets that subtend places according to the said sputtering source of claim 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 88103800 CN1023653C (en) | 1988-06-28 | 1988-06-28 | Adjustable opposite magnetically-controlled sputtering source and relevant filming process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 88103800 CN1023653C (en) | 1988-06-28 | 1988-06-28 | Adjustable opposite magnetically-controlled sputtering source and relevant filming process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1039070A CN1039070A (en) | 1990-01-24 |
| CN1023653C true CN1023653C (en) | 1994-02-02 |
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ID=4832753
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 88103800 Expired - Fee Related CN1023653C (en) | 1988-06-28 | 1988-06-28 | Adjustable opposite magnetically-controlled sputtering source and relevant filming process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1023653C (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100596312C (en) * | 2006-12-31 | 2010-03-31 | 中国科学院金属研究所 | Magnetron sputtering device |
| CN101220454B (en) * | 2008-01-16 | 2012-07-18 | 哈尔滨工业大学 | Method for manufacturing surface antimicrobial, abrasion-proof metal/ceramic nano-multilayer film |
| CN102021637A (en) * | 2010-12-30 | 2011-04-20 | 东莞市宏德电子设备有限公司 | Anode shielding used for increasing electroplating uniformity |
| CN102181841B (en) * | 2011-05-18 | 2013-04-24 | 应达利电子(深圳)有限公司 | Metal vacuum sputtering device and method |
| CN109722638A (en) * | 2019-01-29 | 2019-05-07 | 北京铂阳顶荣光伏科技有限公司 | A kind of thin film sputtering control device and method |
-
1988
- 1988-06-28 CN CN 88103800 patent/CN1023653C/en not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| CN1039070A (en) | 1990-01-24 |
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